CN102739184A - Radio frequency (RF) tune-up adjustment controller - Google Patents
Radio frequency (RF) tune-up adjustment controller Download PDFInfo
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- CN102739184A CN102739184A CN2012102093957A CN201210209395A CN102739184A CN 102739184 A CN102739184 A CN 102739184A CN 2012102093957 A CN2012102093957 A CN 2012102093957A CN 201210209395 A CN201210209395 A CN 201210209395A CN 102739184 A CN102739184 A CN 102739184A
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Abstract
The invention relates to a radio frequency (RF) tune-up adjustment controller, a pin 1 of a passive device HybridCoupler is an input end of RF, a pin 2 is an output end of RF, and pin ends of a pin 3 and a pin 4 are connected with an active device PINDiodes to be a synchronization control port; or, the pin 1 of the passive device HybridCouper is the output end of RF, the pin 2 is an input end of RF, and pin ends of the pin 3 and the pin 4 are connected with the active device PINDiodes to be a synchronous control port. The communication extent of the active device PINDiodes is controlled through a stable DC (direct current) voltage value, and according to a reflective extent from a tune-up input to a tune-up output through HybridCoupler, an application of the adjustment of the tune-up from low to high or from high to low is realized.
Description
Technical field
The present invention relates to a kind of rf gain conditioning controller of variable attenuator circuit structure of three-dB coupler, belong to wireless communication technology field.
Background technology
Common rf gain conditioning controller volume is big, and standing wave is poor, and efficient is low, and power consumption is big, and do not have standard, versatility and interchangeability.
The characteristics of existing rf gain conditioning controller are when RF input and RF output, to mate fully; ESD: at RFin & RFout pin place greater than 3kV; High attenuation range; High-gain and high linearity characteristic; High OIP3; Low insertion loss; The low distortion decay; Low current control; Power Limitation/circuit protection; Dwindle circuit board space; Product specification has good homogeneous property; Meet the ROHS of European Union standard.
Summary of the invention
The objective of the invention is to overcome the deficiency that prior art exists, a kind of rf gain conditioning controller of variable attenuator circuit structure of dB coupler is provided.
The object of the invention is realized through following technical scheme:
The rf gain conditioning controller; Characteristics are: comprise passive device Hybrid Coupler and active device PIN Diodes; The pin Pin1 of passive device Hybrid Coupler is the RF input; Pin Pin2 is the RF output, and it is the Synchronization Control port that pin Pin3 is connected active device PIN Diodes with the leads ends of pin Pin4; Perhaps, the pin Pin1 of passive device Hybrid Coupler is the RF output, and pin Pin2 is the RF input, and it is the Synchronization Control port that pin Pin3 is connected active device PIN Diodes with pin Pin4 leads ends.
Further, above-mentioned rf gain conditioning controller, wherein, said passive device Hybrid Coupler is a three-dB coupler.
Further, above-mentioned rf gain conditioning controller, wherein, said active device PIN Diodes is the voltage variable resistor device.
Substantive distinguishing features and obvious improvement that technical scheme of the present invention is outstanding are mainly reflected in:
Adopt passive device Hybrid Coupler and active device PIN Diodes & resistance R capacitor C and inductance L combination to accomplish the gain-adjusted controller, control the conducting degree of active device PIN Diodes, in size of the degree of reflection of exporting (Gain OUT) to gaining by gain input (Gain IN) through Hybrid Coupler through a stable dc voltage value; Realize yield value from low to high, perhaps from high to low one regulates and uses, and reaches a stable gain value output; Through analysis to the gain controlling fluctuation; All reached good performance from parameters such as impedance matching, the linearity, the amplitudes of accommodation, circuit structure applying in a flexible way very, volume is little; Cost is low; High conformity is easy to research and development and production in enormous quantities, uses extensively.
Description of drawings
Below in conjunction with accompanying drawing technical scheme of the present invention is described further:
Fig. 1: principle schematic of the present invention.
Embodiment
As shown in Figure 1; The rf gain conditioning controller; Comprise passive device Hybrid Coupler and active device PIN Diodes; The pin Pin1 (Input) of passive device Hybrid Coupler is the RF input, and pin Pin2 (Isolated) is the RF output, and it is the Synchronization Control port that pin Pin3 is connected active device PIN Diodes with the leads ends of pin Pin4; Perhaps, the pin Pin1 (Input) of passive device Hybrid Coupler is the RF output, and pin Pin2 (Isolated) is the RF input, and it is the Synchronization Control port that pin Pin3 is connected active device PIN Diodes with pin Pin4 leads ends.
The signal control circuit of variable attenuator and phase shifter; Use the reflecting attribute of three-dB coupler; Two of three-dB coupler output ports link to each other with PIN diode (is the voltage variable resistor device at rf frequency basically) on the variable attenuator circuit; Make the three-dB coupler output port through changing resistance; Reflection coefficient Γ also will change can be reflected to the energy of isolated port and varying number, and signal of the input of three-dB coupler can appear at isolated port, and the amplitude of this signal will depend on the output port resistance.
Adopt passive device Hybrid Coupler and active device PIN Diodes & resistance R capacitor C and inductance L combination to accomplish the gain-adjusted controller, control the conducting degree of active device PIN Diodes, in size of the degree of reflection of exporting (Gain OUT) to gaining by gain input (Gain IN) through Hybrid Coupler through a stable dc voltage value; Realize yield value from low to high, perhaps from high to low one regulates and uses, and reaches a stable gain value output; Through analysis to the gain controlling fluctuation; All reached good performance from parameters such as impedance matching, the linearity, the amplitudes of accommodation, circuit structure applying in a flexible way very, volume is little; Cost is low; High conformity is easy to research and development and production in enormous quantities, uses extensively.On the basis of analyzing the rf gain decay, utilize the circuit structure that constitutes a rf gain conditioning controller of passive device (Hybrid Coupler) and active device (PIN Diodes) RCL, the design of radio frequency gain controlling is had certain reference value.
What need understand is: the above only is a preferred implementation of the present invention; For those skilled in the art; Under the prerequisite that does not break away from the principle of the invention, can also make some improvement and retouching, these improvement and retouching also should be regarded as protection scope of the present invention.
Claims (3)
1. rf gain conditioning controller; It is characterized in that: comprise passive device Hybrid Coupler and active device PIN Diodes; The pin Pin1 of passive device Hybrid Coupler is the RF input; Pin Pin2 is the RF output, and it is the Synchronization Control port that pin Pin3 is connected active device PIN Diodes with the leads ends of pin Pin4; Perhaps, the pin Pin1 of passive device Hybrid Coupler is the RF output, and pin Pin2 is the RF input, and it is the Synchronization Control port that pin Pin3 is connected active device PIN Diodes with pin Pin4 leads ends.
2. rf gain conditioning controller according to claim 1 is characterized in that: said passive device Hybrid Coupler is a three-dB coupler.
3. rf gain conditioning controller according to claim 1 is characterized in that: said active device PIN Diodes is the voltage variable resistor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102093957A CN102739184A (en) | 2012-06-25 | 2012-06-25 | Radio frequency (RF) tune-up adjustment controller |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102093957A CN102739184A (en) | 2012-06-25 | 2012-06-25 | Radio frequency (RF) tune-up adjustment controller |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102739184A true CN102739184A (en) | 2012-10-17 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012102093957A Pending CN102739184A (en) | 2012-06-25 | 2012-06-25 | Radio frequency (RF) tune-up adjustment controller |
Country Status (1)
| Country | Link |
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| CN (1) | CN102739184A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019024582A1 (en) * | 2017-08-01 | 2019-02-07 | Huawei Technologies Co., Ltd. | High-linearity quadrature hybrid attenuator |
| GB2582656A (en) * | 2019-03-29 | 2020-09-30 | Sony Semiconductor Solutions Corp | Substrate integrated waveguide signal level control element and signal processing circuitry |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0844493A1 (en) * | 1991-12-20 | 1998-05-27 | Raytheon Company | Spurious frequency suppressor |
| JPH11317606A (en) * | 1998-04-30 | 1999-11-16 | Nec Eng Ltd | Pin diode switch |
| JP2006054555A (en) * | 2004-08-10 | 2006-02-23 | Nippon Dengyo Kosaku Co Ltd | High frequency switch |
-
2012
- 2012-06-25 CN CN2012102093957A patent/CN102739184A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0844493A1 (en) * | 1991-12-20 | 1998-05-27 | Raytheon Company | Spurious frequency suppressor |
| JPH11317606A (en) * | 1998-04-30 | 1999-11-16 | Nec Eng Ltd | Pin diode switch |
| JP2006054555A (en) * | 2004-08-10 | 2006-02-23 | Nippon Dengyo Kosaku Co Ltd | High frequency switch |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019024582A1 (en) * | 2017-08-01 | 2019-02-07 | Huawei Technologies Co., Ltd. | High-linearity quadrature hybrid attenuator |
| GB2582656A (en) * | 2019-03-29 | 2020-09-30 | Sony Semiconductor Solutions Corp | Substrate integrated waveguide signal level control element and signal processing circuitry |
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Application publication date: 20121017 |