CN204068931U - Possesses the 200W High Efficiency Solid-State microwave source of Automatic adjusument function - Google Patents
Possesses the 200W High Efficiency Solid-State microwave source of Automatic adjusument function Download PDFInfo
- Publication number
- CN204068931U CN204068931U CN201420312349.4U CN201420312349U CN204068931U CN 204068931 U CN204068931 U CN 204068931U CN 201420312349 U CN201420312349 U CN 201420312349U CN 204068931 U CN204068931 U CN 204068931U
- Authority
- CN
- China
- Prior art keywords
- power amplifier
- voltage
- high efficiency
- microwave source
- automatic adjusument
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003321 amplification Effects 0.000 claims abstract description 7
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 7
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 230000001808 coupling effect Effects 0.000 abstract description 2
- 238000012544 monitoring process Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Landscapes
- Microwave Amplifiers (AREA)
- Control Of High-Frequency Heating Circuits (AREA)
Abstract
The utility model discloses a kind of 200W High Efficiency Solid-State microwave source possessing Automatic adjusument function, comprise voltage controlled oscillator, voltage-controlled attenuation module, one-level power amplifier, secondary power amplifier, final stage power amplifier, coupled chamber, load, testing circuit and control circuit nine parts.The cavity load that the utility model changes for resonance point, is adjusted frequency and incident power in time by Real-Time Monitoring reflection power, to reach best coupling effect.The LDMOS microwave power amplification chip that the utility model adopts, compared to traditional magnetron, has less volume, and efficiency can reach more than 75% simultaneously.
Description
Technical field
The utility model relates to radio frequency arts, specifically a kind of 200W High Efficiency Solid-State microwave source possessing Automatic adjusument function.
Background technology
The development of science and technology impels radio frequency applications more and more to go deep into the various aspects of people's life, and development and progressively the dropping of price of LDMOS efficient microwave power tube technology also promote the development of this trend.Radio frequency applications will replace the main flow that prior art becomes future undoubtedly in some fields.In some application scenarios, the resonance point of rf load is not unalterable, but changes along with the change of load characteristic, at this time just needs microwave source to adjust output frequency and power timely, to reach best coupling effect.
What conventional other microwave source of hectowatt grade adopted is magnetron technology, and magnetron is bulky, and along with the maturation of LDMOS microwave power Manifold technology, existing LDMOS Microwave Power Tubes has very large advantage compared to magnetron in cost and efficiency.Solid state microwave source technology will become the main flow of following microwave high power technology development.
Utility model content
The purpose of this utility model is to provide a kind of 200W High Efficiency Solid-State microwave source possessing Automatic adjusument function, to solve prior art Problems existing.
In order to achieve the above object, the technical scheme that the utility model adopts is:
Possesses the 200W High Efficiency Solid-State microwave source of Automatic adjusument function, it is characterized in that: comprise voltage controlled oscillator, voltage-controlled attenuation module, one-level power amplifier, secondary power amplifier, final stage power amplifier, coupled chamber, load, testing circuit, control circuit, the signal output part of described voltage controlled oscillator is connected with voltage-controlled attenuation module input, voltage-controlled attenuation module output is connected with one-level power amplifier signal input part, one-level power amplifier signal output part is connected with secondary power amplifier signal input part, secondary power amplifier signal output part is connected with final stage power amplifier signal input part, final stage power amplifier signal output part is connected with coupled chamber, load is fixed on coupled chamber surface, final stage power amplifier signal output part is also connected with testing circuit signal input part, testing circuit signal output part is connected with control circuit signal input part, control circuit signal output part respectively with voltage controlled oscillator, the control end of voltage-controlled attenuation module connects.
Described voltage-controlled attenuation module core adopts the voltage-controlled decay chip of Pi type containing 4 diodes, and have Larger Dynamic attenuation range, the excellent linearity, described decay chip can select HSMP-3866, HSMP-3816.
Described one-level power amplifier core adopts GaAs HBT type microwave power amplification chip SXA-389B or CGA6618Z, peak power output 0.25W, gain 18-20dB.
Described secondary power amplifier core adopts LATERAL N-CHANNEL MOSFET type microwave power amplification chip MW6S004NT1, peak power output 4W, gain 18-20dB.
Described final stage power amplifier is made up of LDMOS type microwave power amplifier, final stage power amplifier peak power output 200W, gain 19-21dB.
Described testing circuit adopts directional coupling structure.
Described control circuit builds based on single-chip microcomputer and forms.
Described load is applicable to the carrier that can adopt microwave-excitation containing the quartz bulb shell of golden halogen and its of microwave-excitation.
In the utility model, testing circuit adopts unique directional coupling structure, enters incident power in coupled chamber and coupled chamber reflects to the reflection power of final stage power amplifier to detect final stage power amplifier in real time.And be sent to control circuit after the incidence detected and reflected power signal are converted to voltage signal, the voltage signal that control circuit exports according to testing circuit, adopt analog voltage regulating and controlling to regulate voltage controlled oscillator and controllable attenuation in real time.
Microwave energy enters load by coupled chamber, because the resonance point of load changes, just needs to adjust microwave frequency timely.The utility model can detection of reflected power in real time, once reflection power is excessive, will reduce incident power on the one hand by voltage-controlled attenuation module, ensure the safety of microwave source.Also to regulate microwave frequency by voltage controlled oscillator, to reach resonance frequency simultaneously.The utility model adopts LDMOS microwave power amplifier as final stage power amplifier simultaneously, compared to traditional magnetron, has less volume, and efficiency can reach more than 75% simultaneously.
Accompanying drawing explanation
Fig. 1 is the utility model system architecture diagram.
Embodiment
Shown in Figure 1, possesses the 200W High Efficiency Solid-State microwave source of Automatic adjusument function, it is characterized in that: comprise voltage controlled oscillator, voltage-controlled attenuation module, one-level power amplifier, secondary power amplifier, final stage power amplifier, coupled chamber, load, testing circuit, control circuit, the signal output part of described voltage controlled oscillator is connected with voltage-controlled attenuation module input, voltage-controlled attenuation module output is connected with one-level power amplifier signal input part, one-level power amplifier signal output part is connected with secondary power amplifier signal input part, secondary power amplifier signal output part is connected with final stage power amplifier signal input part, final stage power amplifier signal output part is connected with coupled chamber, load is fixed on coupled chamber surface, final stage power amplifier signal output part is also connected with testing circuit signal input part, testing circuit signal output part is connected with control circuit signal input part, control circuit signal output part respectively with voltage controlled oscillator, the control end of voltage-controlled attenuation module connects.
One-level power amplifier core adopts GaAs HBT type microwave power amplification chip SXA-389B or CGA6618Z, peak power output 0.25W, gain 18-20dB.
Secondary power amplifier core adopts LATERAL N-CHANNEL MOSFET type microwave power amplification chip MW6S004NT1, peak power output 4W, gain 18-20dB.
Final stage power amplifier is made up of LDMOS microwave power amplifier, final stage power amplifier peak power output 200W, gain 19-21dB.
Testing circuit adopts directional coupling structure.
Control circuit builds based on single-chip microcomputer and forms.
Specific embodiment
The utility model comprises voltage controlled oscillator, voltage-controlled attenuation module, one-level power amplifier, secondary power amplifier, final stage power amplifier, coupled chamber, load, testing circuit and control circuit nine parts.VCO and voltage-controlled attenuation module all adopt analog voltage regulating and controlling.Voltage-controlled attenuation module maximum attenuation can reach-40dB.The discrete component that VCO adopts is built, and has good spectral purity.
One-level power amplifier peak power output 0.25W, gain 18-20dB in this example.Secondary power amplifier peak power output 4W, gain 18-20dB.
Final stage power amplifier peak power output 200W in this embodiment, gain 19-21dB, final stage power amplifier adopts LDMOS microwave power amplifier.Choose suitable matching network, final stage power amplifier efficiency can reach 75% even higher.
In this embodiment, one-level power amplifier, secondary power amplifier realize mating by microstrip line, electric capacity, inductance with between final stage power amplifier.
In this embodiment, load can be the load of resonance point change.
In this embodiment, detecting circuit have employed unique coupled structure, and this detecting circuit has good isolation and directivity, can well distinguish incident power and reflection power.Detecting circuit exports as voltage signal, and control circuit judges these signals, once reflection power is excessive, can adjust frequency timely, until the resonance point finding reflection power minimum.Control circuit adopts single-chip microcomputer to complete such arbitration functions.Control circuit exports Frequency And Amplitude Modulation two-way voltage signal, and this two paths of signals regulates frequency and the amplitude of microwave power source by control voltage controlled oscillator and controllable attenuation.
Claims (8)
1. possesses the 200W High Efficiency Solid-State microwave source of Automatic adjusument function, it is characterized in that: comprise voltage controlled oscillator, voltage-controlled attenuation module, one-level power amplifier, secondary power amplifier, final stage power amplifier, coupled chamber, load, testing circuit, control circuit, the signal output part of described voltage controlled oscillator is connected with voltage-controlled attenuation module signal input part, voltage-controlled attenuation module signal output part is connected with one-level power amplifier signal input part, one-level power amplifier signal output part is connected with secondary power amplifier signal input part, secondary power amplifier signal output part is connected with final stage power amplifier signal input part, final stage power amplifier signal output part is connected with coupled chamber, load is fixed on coupled chamber surface.
2. final stage power amplifier signal output part is also connected with testing circuit signal input part, and testing circuit signal output part is connected with control circuit signal input part, and control circuit signal output part is connected with the control end of VCO module, voltage-controlled attenuation module respectively.
3. the 200W High Efficiency Solid-State microwave source possessing Automatic adjusument function according to claim 1, it is characterized in that: described voltage-controlled attenuation module core adopts the voltage-controlled decay chip of Pi type containing 4 diodes, have Larger Dynamic attenuation range, the excellent linearity, described decay chip can select HSMP-3866, HSMP-3816.
The 200W High Efficiency Solid-State microwave source possessing Automatic adjusument function according to claim 1, it is characterized in that: described one-level power amplifier core adopts GaAs HBT type microwave power amplification chip SXA-389B or CGA6618Z, peak power output 0.25W, gain 18-20dB.
4. the 200W High Efficiency Solid-State microwave source possessing Automatic adjusument function according to claim 1, it is characterized in that: described secondary power amplifier core adopts LATERAL N-CHANNEL MOSFET type microwave power amplification chip MW6S004NT1, peak power output 4W, gain 18-20dB.
5. the 200W High Efficiency Solid-State microwave source possessing Automatic adjusument function according to claim 1, is characterized in that: described final stage power amplifier is made up of LDMOS type microwave power amplifier, final stage power amplifier peak power output 200W, gain 19-21dB.
6. the 200W High Efficiency Solid-State microwave source possessing Automatic adjusument function according to claim 1, is characterized in that: described testing circuit adopts directional coupling structure.
7. the 200W High Efficiency Solid-State microwave source possessing Automatic adjusument function according to claim 1, is characterized in that: described control circuit builds based on single-chip microcomputer and forms.
8. the 200W High Efficiency Solid-State microwave source possessing Automatic adjusument function according to claim 1, is characterized in that: described load is applicable to the carrier of microwave-excitation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420312349.4U CN204068931U (en) | 2014-06-12 | 2014-06-12 | Possesses the 200W High Efficiency Solid-State microwave source of Automatic adjusument function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420312349.4U CN204068931U (en) | 2014-06-12 | 2014-06-12 | Possesses the 200W High Efficiency Solid-State microwave source of Automatic adjusument function |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204068931U true CN204068931U (en) | 2014-12-31 |
Family
ID=52210371
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420312349.4U Expired - Fee Related CN204068931U (en) | 2014-06-12 | 2014-06-12 | Possesses the 200W High Efficiency Solid-State microwave source of Automatic adjusument function |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204068931U (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105423366A (en) * | 2015-12-29 | 2016-03-23 | 京信通信技术(广州)有限公司 | Microwave output power control device and method |
| CN106055732A (en) * | 2016-05-03 | 2016-10-26 | 中国科学院等离子体物理研究所 | Design method for pre-stage solid-state microwave source of low-hybrid wave system |
| CN106998205A (en) * | 2017-04-01 | 2017-08-01 | 北京无线电计量测试研究所 | A kind of coefficient of coup regulation sapphire microwave source and adjusting method |
| CN108039877A (en) * | 2017-11-13 | 2018-05-15 | 北京无线电计量测试研究所 | A kind of microwave amplitude adjuster |
| CN108123713A (en) * | 2018-02-09 | 2018-06-05 | 江苏天瑞仪器股份有限公司 | A kind of New Solid radio-frequency power system |
| CN110823141A (en) * | 2019-11-11 | 2020-02-21 | 华滋奔腾（苏州）安监仪器有限公司 | Demodulator and demodulation method of reflection type coaxial cable Fabry-Perot sensor |
| CN113141743A (en) * | 2021-04-19 | 2021-07-20 | 中国科学院合肥物质科学研究院 | Solid-state microwave power synthesis driving module |
-
2014
- 2014-06-12 CN CN201420312349.4U patent/CN204068931U/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105423366A (en) * | 2015-12-29 | 2016-03-23 | 京信通信技术(广州)有限公司 | Microwave output power control device and method |
| CN105423366B (en) * | 2015-12-29 | 2018-01-09 | 京信通信技术(广州)有限公司 | Microwave output power control device and method |
| CN106055732A (en) * | 2016-05-03 | 2016-10-26 | 中国科学院等离子体物理研究所 | Design method for pre-stage solid-state microwave source of low-hybrid wave system |
| CN106998205A (en) * | 2017-04-01 | 2017-08-01 | 北京无线电计量测试研究所 | A kind of coefficient of coup regulation sapphire microwave source and adjusting method |
| CN106998205B (en) * | 2017-04-01 | 2019-06-18 | 北京无线电计量测试研究所 | A kind of coefficient of coup adjusts sapphire microwave source and adjusting method |
| CN108039877A (en) * | 2017-11-13 | 2018-05-15 | 北京无线电计量测试研究所 | A kind of microwave amplitude adjuster |
| CN108123713A (en) * | 2018-02-09 | 2018-06-05 | 江苏天瑞仪器股份有限公司 | A kind of New Solid radio-frequency power system |
| CN110823141A (en) * | 2019-11-11 | 2020-02-21 | 华滋奔腾（苏州）安监仪器有限公司 | Demodulator and demodulation method of reflection type coaxial cable Fabry-Perot sensor |
| CN110823141B (en) * | 2019-11-11 | 2021-04-30 | 华滋奔腾（苏州）安监仪器有限公司 | Demodulator and demodulation method of reflection type coaxial cable Fabry-Perot sensor |
| CN113141743A (en) * | 2021-04-19 | 2021-07-20 | 中国科学院合肥物质科学研究院 | Solid-state microwave power synthesis driving module |
| CN113141743B (en) * | 2021-04-19 | 2022-07-29 | 中国科学院合肥物质科学研究院 | Solid-state microwave power synthesis driving module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN204068931U (en) | Possesses the 200W High Efficiency Solid-State microwave source of Automatic adjusument function | |
| CN106301238B (en) | A kind of high-power high-efficiency Doherty power amplifier | |
| CN203278749U (en) | Low noise amplifier with automatic level control circuit | |
| CN205029402U (en) | Wireless charging system of microwave based on array antenna | |
| CN102664601A (en) | Self-adapting impedance matching module | |
| CN104393843A (en) | Doherty power amplifier adopting multistage auxiliary circuit amplifier | |
| CN201114040Y (en) | Radio frequency power open-loop control device | |
| CN205140188U (en) | Wireless teletransmission water gauge control circuit based on LORA technique | |
| CN203872137U (en) | Microwave power amplifier | |
| CN201360240Y (en) | 2.4 GHz bidirectional 1 Watt linear power controller (LPC) | |
| CN103199802A (en) | Single-chip low-noise amplifier | |
| CN205304743U (en) | High linear broad band power amplifier of restructural high efficiency | |
| CN208479603U (en) | A kind of radio-frequency transmitter with raising circuit dynamic range functions | |
| CN204597957U (en) | A kind of high integration intercom power amplifier front end module | |
| CN110855245A (en) | Millimeter wave/terahertz power frequency doubling circuit | |
| CN204376835U (en) | Adopt the Doherty power amplifier of multistage bypass amplifier | |
| CN202586884U (en) | Adaptive impedance matching module | |
| CN204578479U (en) | The microwave power amplifying device of adjustable attenuation amplitude | |
| CN201623252U (en) | Coaxial coupler | |
| CN204156825U (en) | Radio-frequency power amplifier | |
| CN203135799U (en) | Single-chip power amplifier | |
| CN204578476U (en) | Microwave power amplifying device | |
| CN205610588U (en) | High efficiency doherty power amplifier based on harmonic control | |
| CN202815647U (en) | Controllable voltage stabilizing circuit for improving reliability of high-power vehicular radio station | |
| CN203135797U (en) | Single-chip low-noise amplifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141231 |