CN102739069A - Power semiconductor module and power electronic device applying same - Google Patents
Power semiconductor module and power electronic device applying same Download PDFInfo
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- CN102739069A CN102739069A CN2012102005513A CN201210200551A CN102739069A CN 102739069 A CN102739069 A CN 102739069A CN 2012102005513 A CN2012102005513 A CN 2012102005513A CN 201210200551 A CN201210200551 A CN 201210200551A CN 102739069 A CN102739069 A CN 102739069A
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Abstract
The invention provides a power semiconductor module and a power electronic device applying the same. The power semiconductor module comprises an upper bridge arm circuit, a box-shaped first outer shell for containing the upper bridge arm circuit, a lower bridge arm circuit and a box-shaped second outer shell for containing the lower bridge arm circuit, wherein the upper bridge arm circuit and the box-shaped first outer shell for containing the upper bridge arm circuit are independently packaged into a first module, and the lower bridge arm circuit and the box-shaped second outer shell for containing the lower bridge arm circuit are independently packaged into a second module, i.e. each phase of a three-level frequency converter formed by the semiconductor module provided by the invention only comprises two modules. Compared with the number of modules of each phase of the frequency converter in the prior art, the number of the modules of the frequency converter of the invention is reduced, circumscribed connecting circuits needed between the modules are reduced, the power consumption of each module is further reduced, and at the same time the size of the mutually connected circuits of the three-level frequency converter formed by the semiconductor module provided by the invention is reduced, so that the cost of manufacture is reduced.
Description
Technical field
The present invention relates to power electronic system, the power electronic equipment that relates to a kind of power semiconductor modular in particular and use it.
Background technology
Three-level converter has obtained in the electric drive field using widely, and wherein, the tri-level inversion topological structure is that the realization of high voltage, big-power transducer provides a valid approach.At present; Traditional tri-level inversion topological structure mainly comprises a plurality of clamping diodes and a plurality of switch element; Wherein, and the insulated gate bipolar transistor that each switch element is connected by anti-parallel connection (Insulated Gate Bipolar Transistor, IGBT) and fly-wheel diode (Freewheeling diode; FWD) form; And each of tri-level inversion topological structure comprises 2 clamping diodes and 4 switch elements mutually, and usually 2 clamping diodes being packaged together is called diode (led) module, and 2 switch elements are packaged together is called the IGBT module.This packaged type that prior art adopted makes each of tri-level inversion topological structure be made up of 3 modules; Accordingly; Each three level, two quadrant frequency converter comprises 9 modules, i.e. 3 diode (led) modules and 6 IGBT modules, in like manner; Each three level four-quadrant frequency converter comprises 18 modules, i.e. 6 diode (led) modules and 12 IGBT modules.
So; The module number that three-level converter of the prior art adopted is more; Connect because of needs between each module use a large amount of external circuits again, and then caused three-level converter in the prior art, caused the power consumption of each module high because electric current repeatedly flows through package module; And the circuit volume of the frequency converter after interconnecting is bigger, and then has increased cost of manufacture.Therefore, how to reduce the employed module number of three-level converter is that industry is demanded improved target urgently always.
Summary of the invention
In view of this, the power electronic equipment that the invention provides a kind of power semiconductor modular and use it has effectively solved more, each problem that modular power consumption is high, the circuit volume is bigger of three-level converter module number in the prior art.
For realizing above-mentioned purpose, the present invention provides following technical scheme:
A kind of power semiconductor modular; Comprise first module and second module; Said first module comprises bridge arm circuit and holds said first shell of going up the bridge arm circuit box; Said second module comprises following bridge arm circuit and holds said second shell of bridge arm circuit box down; Wherein, The said bridge arm circuit that goes up comprises: first clamping diode, first switch element and second switch element, said first switch element includes insulated gate bipolar transistor (IGBT) and the fly-wheel diode (FWD) that anti-parallel connection is connected with said second switch element, the output of said first clamping diode respectively with said first switch element in emitter and the said second switch element of IGBT the collector electrode of IGBT link to each other;
Said bridge arm circuit down comprises: second clamping diode, the 3rd switch element and the 4th switch element; Said the 3rd switch element includes IGBT and the FWD that anti-parallel connection is connected with said the 4th switch element, the input of said second clamping diode respectively with said the 3rd switch element in emitter and said the 4th switch element of IGBT the collector electrode of IGBT link to each other;
The emitter of IGBT links to each other with the collector electrode of IGBT in said the 3rd switch element in the said second switch element, and the input of said first clamping diode links to each other with the output of said second clamping diode.
Preferably, said first shell comprises: be arranged on four jiaos of said first shell and the long limit of said first shell and to be used to install the screw base of screw; Be arranged on the main circuit terminal board in the center of top zone of said first shell; Be arranged on the control end daughter board in the top zone of said first shell.
Preferably, said second shell comprises: be arranged on four jiaos of said second shell and the long limit of said second shell and to be used to install the screw base of screw; Be arranged on the main circuit terminal board in the center of top zone of said second shell; Be arranged on the control end daughter board in the top zone of said second shell.
Preferably, said first module also comprises first temperature sensor, is used to detect the temperature of said first module, and when the temperature that detects said first module surpasses preset range, starts external connection radiating device.
Preferably, said second module also comprises second temperature sensor, is used to detect the temperature of said second module, and when the temperature that detects said second module surpasses preset range, starts external connection radiating device.
Preferably, said power semiconductor modular is for adopting the module of PrimePack2 packing forms.
Preferably, said first shell and said second shell are the moulded resin shell.
A kind of power electronic equipment comprises above-mentioned arbitrary power semiconductor modular.
A kind of three level, two quadrant frequency converters comprise rectifying part, inversion part, IGBT driving power and chip for driving, and wherein, said inversion partly comprises three above-mentioned arbitrary power semiconductor modulars.
A kind of three level four-quadrant frequency converters comprise rectifying part, inversion part, IGBT driving power and chip for driving, and wherein, said rectifying part and inversion partly include three above-mentioned arbitrary power semiconductor modulars.
Can know via above-mentioned technical scheme; Compared with prior art; The power electronic equipment that the invention provides a kind of power semiconductor modular and use it; Comprise bridge arm circuit, hold said first shell of the box of bridge arm circuit, the bridge arm circuit and hold said second shell of the box of bridge arm circuit down down of going up, wherein, said first shell of going up bridge arm circuit and holding the box of bridge arm circuit carries out individual packages and becomes first module; Said down bridge arm circuit and hold down second shell of the box of bridge arm circuit and carry out individual packages and become second module; Each that promptly adopts three-level converter that semiconductor module provided by the invention constitutes comprises two modules mutually, compares in the prior art that the number of modules of each phase reduces in the frequency converter, makes the external connection line that needs between each module reduce; And then reduced the power consumption of each module; Simultaneously, the circuit volume of the said frequency converter after the three-level converter that adopts semiconductor module provided by the invention to constitute interconnects reduces, and then has reduced cost of manufacture.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art; To do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below; Obviously, the accompanying drawing in describing below only is embodiments of the invention, for those of ordinary skills; Under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to the accompanying drawing that provides.
Fig. 1 is the encapsulation sketch map of each phase in the three-level converter provided by the invention;
Fig. 2 is the circuit diagram of the last bridge arm circuit of a kind of power semiconductor modular provided by the invention;
Fig. 3 is the circuit diagram of the following bridge arm circuit of a kind of power semiconductor modular provided by the invention;
Fig. 4 is the encapsulating structure figure of three level, two quadrant frequency converters provided by the invention;
Fig. 5 is the encapsulating structure figure of three level four-quadrant frequency converters provided by the invention;
Fig. 6 is the structural representation of first shell of a kind of box of holding bridge arm circuit provided by the invention;
Fig. 7 is the schematic internal view of first module of a kind of power semiconductor modular provided by the invention;
Fig. 8 is the structural representation that first shell of a kind of power semiconductor modular provided by the invention is connected with second shell.
Embodiment
For quote and know for the purpose of, the explanation of the technical term that hereinafter uses, write a Chinese character in simplified form or abridge and sum up as follows:
IGBT:Insulated Gate Bipolar Transistor, insulated gate bipolar transistor.
FWD:Freewheeling diode, fly-wheel diode.
To combine the accompanying drawing in the embodiment of the invention below, the technical scheme in the embodiment of the invention is carried out clear, intactly description, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the present invention's protection.
The frequency converter that the invention provides a kind of power semiconductor modular and use it; Comprise bridge arm circuit, hold first shell, the following bridge arm circuit of the said upward box of bridge arm circuit and hold said second shell of the box of bridge arm circuit down; Wherein, Said first shell of going up bridge arm circuit and holding the box of bridge arm circuit carries out individual packages and becomes first module, and said bridge arm circuit down and hold down second shell of the box of bridge arm circuit and carry out individual packages and become second module promptly adopts each of three-level converter of semiconductor module formation provided by the invention to comprise two modules mutually; Compare the number of modules of each phase minimizing in the frequency converter in the prior art; Make the external connection line that needs between each module reduce, and then reduced the power consumption of each module, simultaneously; The circuit volume of the said frequency converter after the three-level converter that adopts semiconductor module provided by the invention to constitute interconnects reduces, and then has reduced cost of manufacture.
See also Fig. 1; Fig. 1 is the encapsulation sketch map of each phase in a kind of three-level converter provided by the invention; Wherein, A kind of power semiconductor modular comprises first module and second module, first shell that first module comprises bridge arm circuit 10 and holds the box of bridge arm circuit 10, and second module comprises following bridge arm circuit 20 and holds second shell of the box of bridge arm circuit 20 down.
Wherein, last bridge arm circuit 10, as shown in Figure 2, the circuit diagram for the last bridge arm circuit 10 of a kind of power semiconductor modular provided by the invention comprises: first switch element 101, second switch element 102 and first clamping diode 103.First switch element 101 and second switch element 102 include IGBT and the FWD that anti-parallel connection connects, the negative electrode of first clamping diode 103 respectively with first switch element 101 in emitter and the second switch element 102 of IGBT the collector electrode of IGBT link to each other.
Following bridge arm circuit 20, as shown in Figure 3, the circuit diagram for the following bridge arm circuit 20 of a kind of power semiconductor modular provided by the invention comprises: the 3rd switch element 201, the 4th switch element 202 and second clamping diode 203.The 3rd switch element 201 and the 4th switch element 202 include IGBT and the FWD that anti-parallel connection connects, the anode of second clamping diode 203 respectively with the 3rd switch element 201 in emitter and the 4th switch element 202 of IGBT the collector electrode of IGBT link to each other.
The collector electrode of IGBT links to each other in the 3rd switch element 201 in the second switch element 102 in the last bridge arm circuit 10 in the emitter of IGBT and the following bridge arm circuit 20, and the anode of first clamping diode 103 links to each other with the negative electrode of second clamping diode 203.
Wherein, Control end in the last bridge arm circuit 10 is as shown in Figure 2; Control end in the following bridge arm circuit 20 is as shown in Figure 3; Be specially: the anode of first clamping diode 103 is a 9a end, in first switch element 101 grid of IGBT be 4a end, current collection very 5a end and 10a end, launch very 3a end, the grid of IGBT is the 1a end, launches very 2a end and 8a end in the second switch element 102.Same; The negative electrode of second clamping diode 203 is the 9b end; In the 3rd switch element 201 grid of IGBT be 4b end, current collection very 5b end and 8b end, launch very 3b end, the grid of IGBT is the 1b end, launches very 2b end and 10b end in the 4th switch element 202.Preferably, first module also comprises first temperature sensor 104, is used to detect the temperature of first module; And when the temperature that detects first module surpasses preset range; Start external connection radiating device, in Fig. 2, the two ends of temperature sensor are respectively 6a end and 7a end.Equally, second module also comprises second temperature sensor 204, is used to detect the temperature of second module, and when the temperature that detects second module surpasses preset range, starts external connection radiating device, and in Fig. 3, the two ends of temperature sensor are respectively 6b end and 7b end.
First shell that present embodiment provides is identical with second shell mechanism; Existing is that example is introduced with first shell; As shown in Figure 6; Structural representation for first shell of a kind of box of holding bridge arm circuit provided by the invention comprises: screw base 301, main circuit terminal board 302 and control end daughter board 303.
Concrete, last bridge arm circuit 10 is encapsulated in first enclosure, forms first module; The schematic internal view of first module is as shown in Figure 7; Be the schematic internal view of first module of a kind of power semiconductor modular provided by the invention, first inside modules is provided with the binding post of each device, wherein; 8,9,10 is main circuit terminal connections end, and 1,2,3,4,5,6,7 is the control terminal terminals.
Here need to prove that the definition of main circuit terminal and control terminal can set up on their own according to the actual requirements, be not limited to above-mentioned a kind of definition mode.
First module that present embodiment provides and second module have adopted standard P rimePack2 packing forms; Being about to two modules is packaged together when using side by side; Thereby form the power semiconductor modular of the embodiment of the invention, as shown in Figure 8, the structural representation that is connected with second shell for first shell of a kind of power semiconductor modular provided by the invention; The 8a end of first module and the 8b end of second module link to each other; As a phase output terminal of the inversion topological structure of three level, the 9b of the 9a of first module end and second module holds and links together, as the mid point of three level DC busbar voltage.The 10a end of first module connects the positive voltage of dc bus, and the 10b end of second module connects the negative voltage of dc bus.Each of tri-level inversion topological structure is made up of 2 modules like this, i.e. first module and second module.
Accordingly, each three level, two quadrant frequency converter comprises three power semiconductor modulars, i.e. 3 first modules and 3 second modules, and totally 6 modules are as shown in Figure 4, are the encapsulating structure figure of three level, two quadrant frequency converters provided by the invention.In like manner, each three level four-quadrant frequency converter comprises six power semiconductor modulars, i.e. 6 first modules and 6 second modules, and totally 12 modules are as shown in Figure 5, are the encapsulating structure figure of three level four-quadrant frequency converters provided by the invention.Compare with each number of modules mutually in the frequency converter in the prior art; Module package mode provided by the invention makes the quantity of module reduce; Make the external connection line that needs between each module reduce, and then reduced the power consumption of each module, simultaneously; The circuit volume of the frequency converter after the three-level converter that adopts semiconductor module provided by the invention to constitute interconnects reduces, and then has reduced cost of manufacture.
Preferably, first shell and second shell can be the moulded resin shell, also can be the shell of other materials.
Present embodiment also provides a kind of power electronic equipment, comprises the arbitrary power semiconductor modular in the foregoing description.Need to prove that first module and second module that present embodiment provides can encapsulate separately and sell, the device of the power semiconductor modular that any employing present embodiment provides all within protection scope of the present invention, is no longer too much narrated at this.
In addition, in the existing power electronic installation, like frequency converter, wind-powered electricity generation, photovoltaic, UPS etc.; A lot of products adopt three level IGBT modules as inverter switch device; Because three-level inverter comprises 12 IGBT and 6 clamping diodes and forms the neutral-point-clamped circuit that each IGBT needs independently driving power and chip for driving, therefore; Present embodiment also provides a kind of three level, two quadrant frequency converters; Comprise rectifying part and inversion part, wherein, said inversion partly comprises three power semiconductor modulars provided by the invention.Remove this, also comprise IGBT driving power and chip for driving.
Accordingly, present embodiment also provides a kind of three level four-quadrant frequency converters, comprises rectifying part and inversion part, and wherein, said rectifying part and inversion partly include three power semiconductor modulars provided by the invention.Equally, also comprise external IGBT driving power and chip for driving.
More than a kind of power semiconductor modular provided by the present invention and the power electronic equipment of using it have been carried out detailed introduction; Used concrete example among this paper principle of the present invention and execution mode are set forth, the explanation of above embodiment just is used for helping to understand core concept of the present invention; Simultaneously, for one of ordinary skill in the art, according to thought of the present invention, the part that on embodiment and range of application, all can change, in sum, this description should not be construed as limitation of the present invention.
Remove this, each embodiment adopts the mode of going forward one by one to describe in this specification, and what each embodiment stressed all is and the difference of other embodiment that identical similar part is mutually referring to getting final product between each embodiment.For the device that embodiment provides, because it is corresponding with the method that embodiment provides, so description is fairly simple, relevant part is partly explained referring to method and is got final product.
Also need to prove; In this article; Relational terms such as first and second grades only is used for an entity or operation are made a distinction with another entity or operation, and not necessarily requires or hint relation or the order that has any this reality between these entities or the operation.And; Term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability; Thereby make and comprise that process, method, article or the equipment of a series of key elements not only comprise those key elements; But also comprise other key elements of clearly not listing, or also be included as this process, method, article or equipment intrinsic key element.Under the situation that do not having much more more restrictions, the key element that limits by statement " comprising ... ", and be not precluded within process, method, article or the equipment that comprises said key element and also have other identical element.
Above-mentioned explanation to the embodiment that provided makes this area professional and technical personnel can realize or use the present invention.Multiple modification to these embodiment will be conspicuous concerning those skilled in the art, and defined General Principle can realize under the situation that does not break away from the spirit or scope of the present invention in other embodiments among this paper.Therefore, the present invention will can not be restricted to these embodiment shown in this paper, but will meet principle and the features of novelty the wideest corresponding to scope that is provided with this paper.
Claims (10)
1. power semiconductor modular; It is characterized in that; Comprise first module and second module, first shell that said first module comprises bridge arm circuit and holds said last bridge arm circuit box, said second module comprises following bridge arm circuit and holds said second shell of bridge arm circuit box down; Wherein
The said bridge arm circuit that goes up comprises: first clamping diode, first switch element and second switch element; Said first switch element includes insulated gate bipolar transistor (IGBT) and the fly-wheel diode (FWD) that anti-parallel connection is connected with said second switch element, the output of said first clamping diode respectively with said first switch element in emitter and the said second switch element of IGBT the collector electrode of IGBT link to each other;
Said bridge arm circuit down comprises: second clamping diode, the 3rd switch element and the 4th switch element; Said the 3rd switch element includes IGBT and the FWD that anti-parallel connection is connected with said the 4th switch element, the input of said second clamping diode respectively with said the 3rd switch element in emitter and said the 4th switch element of IGBT the collector electrode of IGBT link to each other;
The emitter of IGBT links to each other with the collector electrode of IGBT in said the 3rd switch element in the said second switch element, and the input of said first clamping diode links to each other with the output of said second clamping diode.
2. power semiconductor modular according to claim 1 is characterized in that, said first shell comprises:
Be arranged on four jiaos of said first shell and the long limit of said first shell and to be used to install the screw base of screw;
Be arranged on the main circuit terminal board in the center of top zone of said first shell;
Be arranged on the control end daughter board in the top zone of said first shell.
3. power semiconductor modular according to claim 1 is characterized in that, said second shell comprises:
Be arranged on four jiaos of said second shell and the long limit of said second shell and to be used to install the screw base of screw;
Be arranged on the main circuit terminal board in the center of top zone of said second shell;
Be arranged on the control end daughter board in the top zone of said second shell.
4. power semiconductor modular according to claim 1; It is characterized in that said first module also comprises first temperature sensor, is used to detect the temperature of said first module; And when the temperature that detects said first module surpasses preset range, start external connection radiating device.
5. power semiconductor modular according to claim 1; It is characterized in that said second module also comprises second temperature sensor, is used to detect the temperature of said second module; And when the temperature that detects said second module surpasses preset range, start external connection radiating device.
6. power semiconductor modular according to claim 1 is characterized in that, said power semiconductor modular is for adopting the module of PrimePack2 packing forms.
7. power semiconductor modular according to claim 1 is characterized in that, said first shell and said second shell are the moulded resin shell.
8. a power electronic equipment is characterized in that, comprises the described arbitrary power semiconductor modular of claim 1-7.
9. level two quadrant frequency converters is characterized in that, comprise rectifying part, inversion part, IGBT driving power and chip for driving, and wherein, said inversion partly comprises three like the described arbitrary power semiconductor modular of claim 1-7.
10. level four-quadrant frequency converter; It is characterized in that; Comprise rectifying part, inversion part, IGBT driving power and chip for driving, wherein, said rectifying part and inversion partly include three like the described arbitrary power semiconductor modular of claim 1-7.
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| CN201210200551.3A CN102739069B (en) | 2012-06-18 | 2012-06-18 | Power semiconductor module and power electronic device applying same |
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| CN201210200551.3A CN102739069B (en) | 2012-06-18 | 2012-06-18 | Power semiconductor module and power electronic device applying same |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103323676A (en) * | 2013-05-31 | 2013-09-25 | 深圳市英威腾电气股份有限公司 | Method and device for testing stray inductance of three-level topology |
| CN103545305A (en) * | 2013-11-01 | 2014-01-29 | 徐员娉 | Power module |
| CN103795384A (en) * | 2012-10-31 | 2014-05-14 | 台达电子企业管理（上海）有限公司 | Switch circuit packaging module |
| CN103986350A (en) * | 2014-05-23 | 2014-08-13 | 台达电子企业管理（上海）有限公司 | Five-level rectifier |
| CN104300819A (en) * | 2014-09-17 | 2015-01-21 | 思源清能电气电子有限公司 | Three-level three-phase bridge circuit and modular structure thereof |
| US9754871B2 (en) | 2012-10-31 | 2017-09-05 | Delta Electronics (Shanghai) Co., Ltd. | Switch circuit package module |
| CN104506052B (en) * | 2014-12-25 | 2017-12-08 | 深圳市英威腾电气股份有限公司 | A kind of three level semiconductor modules, lamination copper bar, facies unit circuit and converter |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1036749C (en) * | 1992-10-02 | 1997-12-17 | 株式会社日立制作所 | Inverter apparatus for electric rolling stock |
| JP2010115045A (en) * | 2008-11-07 | 2010-05-20 | Toshiba Corp | Inverter device in power converter |
| CN102044973A (en) * | 2009-10-23 | 2011-05-04 | 哈尔滨九洲电气股份有限公司 | Diode clamping three-level frequency converter |
| WO2012032642A1 (en) * | 2010-09-09 | 2012-03-15 | 三菱電機株式会社 | Power semiconductor module, power conversion apparatus, and railroad vehicle |
-
2012
- 2012-06-18 CN CN201210200551.3A patent/CN102739069B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1036749C (en) * | 1992-10-02 | 1997-12-17 | 株式会社日立制作所 | Inverter apparatus for electric rolling stock |
| JP2010115045A (en) * | 2008-11-07 | 2010-05-20 | Toshiba Corp | Inverter device in power converter |
| CN102044973A (en) * | 2009-10-23 | 2011-05-04 | 哈尔滨九洲电气股份有限公司 | Diode clamping three-level frequency converter |
| WO2012032642A1 (en) * | 2010-09-09 | 2012-03-15 | 三菱電機株式会社 | Power semiconductor module, power conversion apparatus, and railroad vehicle |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103795384B (en) * | 2012-10-31 | 2017-04-19 | 台达电子企业管理（上海）有限公司 | Switch circuit packaging module |
| US10276520B2 (en) | 2012-10-31 | 2019-04-30 | Delta Electronics (Shanghai) Co., Ltd. | Switch circuit package module |
| CN103795384A (en) * | 2012-10-31 | 2014-05-14 | 台达电子企业管理（上海）有限公司 | Switch circuit packaging module |
| US9754871B2 (en) | 2012-10-31 | 2017-09-05 | Delta Electronics (Shanghai) Co., Ltd. | Switch circuit package module |
| US9735137B2 (en) | 2012-10-31 | 2017-08-15 | Delta Electronics (Shanghai) Co., Ltd. | Switch circuit package module |
| CN103323676B (en) * | 2013-05-31 | 2016-03-02 | 深圳市英威腾电气股份有限公司 | The method of testing of the stray inductance of three-level topology and proving installation |
| CN103323676A (en) * | 2013-05-31 | 2013-09-25 | 深圳市英威腾电气股份有限公司 | Method and device for testing stray inductance of three-level topology |
| CN103545305B (en) * | 2013-11-01 | 2016-04-27 | 徐员娉 | A kind of power model |
| CN103545305A (en) * | 2013-11-01 | 2014-01-29 | 徐员娉 | Power module |
| CN103986350B (en) * | 2014-05-23 | 2016-09-14 | 台达电子企业管理（上海）有限公司 | Five level rectifiers |
| CN103986350A (en) * | 2014-05-23 | 2014-08-13 | 台达电子企业管理（上海）有限公司 | Five-level rectifier |
| CN104300819A (en) * | 2014-09-17 | 2015-01-21 | 思源清能电气电子有限公司 | Three-level three-phase bridge circuit and modular structure thereof |
| CN104506052B (en) * | 2014-12-25 | 2017-12-08 | 深圳市英威腾电气股份有限公司 | A kind of three level semiconductor modules, lamination copper bar, facies unit circuit and converter |
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