CN204578341U - A kind of three level power semiconductor modular and three-level topology device - Google Patents
A kind of three level power semiconductor modular and three-level topology device Download PDFInfo
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- CN204578341U CN204578341U CN201520164644.4U CN201520164644U CN204578341U CN 204578341 U CN204578341 U CN 204578341U CN 201520164644 U CN201520164644 U CN 201520164644U CN 204578341 U CN204578341 U CN 204578341U
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Abstract
The utility model embodiment discloses a kind of three level power semiconductor modular, when using general module to build three-level topology circuit for simplifying, and the complicated annexation between each module, thus reduce the volume based on the device of three-level topology circuit.The utility model embodiment comprises: 2 clamp diodes, 4 power switch pipes and 4 fly-wheel diodes, it is characterized in that: described three level power semiconductor modular comprises: shell, described 2 clamp diodes, 4 power switch pipes and 4 fly-wheel diodes are encapsulated in the inside of described shell; 6 Interface Terminals, described 6 Interface Terminals are arranged on the surface of described shell; Drive singal terminal, described drive singal terminal is arranged on the both sides of described shell.The utility model effectively reduces complicated annexation when using general module to build tri-level circuit between each module, and reduces module number, thus reduces the volume based on the device of three-level topology circuit.
Description
Technical field
The utility model relates to electric and electronic technical field, particularly relates to a kind of three level power semiconductor modular and three-level topology device.
Background technology
Middle pressure, high voltage converter are as the energy-efficient means of one, be used widely in electric machine speed regulation field, especially the multi-level high-voltage frequency transformer be made up of multiple power unit cascade has obvious advantage in input, output harmonic wave, efficiency and power factor etc., at present, most high voltage converter is all the structure adopting this power unit cascade type, includes three-level topology circuit in some power cells.
The single phase circuit of existing three-level topology circuit as shown in Figure 1, this single phase circuit is built by 2 general two unit IGBT module and 1 general clamp diode module and is formed, namely often use 3 general modules are needed mutually, wherein, each general IGBT module is composed in series by two IGBT, 2 general IGBT module polarity series connection, this clamp diode module is connected with 2 general IGBT module.
But because this three-level topology circuit uses general module to build, and high voltage transducer power unit generally adopts H bridge in inverter circuit part, three-phase commutation bridge is adopted at rectifier circuit portion, three-phase is needed to input, thus, need to use 2*3=6 general module in inverter circuit part, be respectively the IGBT module of 4 general Unit two and 2 general clamp diode modules, and need to use 3*3=9 general module at rectifier circuit portion, be respectively 6 general two unit IGBT module and 3 general clamp diode modules, the module number used is more, make the annexation between module complicated, also make the volume of power cell larger, and medium voltage frequency converter includes several power cell sometimes, high voltage converter generally all includes very many power cells, and then make the volume of medium-pressure or high pressure frequency converter also larger.
Summary of the invention
The utility model embodiment provides a kind of three level power semiconductor modular, when using logical module to build three-level topology circuit for simplifying, complicated annexation between each module, and the usage quantity reducing module, thus reduce the volume based on the device of three-level topology circuit.
In view of this, this uses novel first aspect to provide a kind of three level semiconductor module, comprising:
Comprise 2 clamp diodes, 4 power switch pipes and 4 fly-wheel diodes, it is characterized in that: described three level power semiconductor modular comprises:
Shell, described 2 clamp diodes, 4 power switch pipes and 4 fly-wheel diodes are encapsulated in the inside of described shell;
6 Interface Terminals, described 6 Interface Terminals are arranged on the surface of described shell;
Drive singal terminal, described drive singal terminal is arranged on the both sides of described shell.
Alternatively:
Described 4 power switch pipes are connected in series, wherein the emitter of first power switch pipe is connected with the collector electrode of second power switch pipe, the emitter of second power switch pipe is connected with the collector electrode of the 3rd power switch pipe, and the emitter of the 3rd power switch pipe is connected with the collector electrode of the 4th power switch pipe;
Described 4 fly-wheel diodes are respectively and between the collector electrode being connected in power switch pipe described in each and emitter, the anode of wherein said fly-wheel diode is connected with the emitter of described power switch pipe, and the negative electrode of described fly-wheel diode is connected with the collector electrode of described power switch pipe;
Described 2 clamp diodes are connected in series, wherein, the anode of first clamp diode is connected with the negative electrode of the second clamp diode, the negative electrode of first clamp diode is connected with the emitter of described first power switch pipe, and the anode of second clamp diode is connected with the collector electrode of described 4th power switch pipe.
Alternatively:
Described 6 Interface Terminals are specially:
The collector electrode of described first power switch pipe draws first interface terminal as positive bus-bar link;
The second Interface Terminal is drawn as bus mid point link between the anode of described first clamp diode and the negative electrode of described second clamp diode;
The emitter of described 4th power switch pipe draws the 3rd Interface Terminal as negative busbar link;
The cathode connection terminal of the 4th Interface Terminal as described first clamp diode is drawn between the emitter of described first power switch pipe and the collector electrode of described second power switch pipe;
Draw the 5th Interface Terminal between the emitter of described second power switch pipe and the collector electrode of described 3rd power switch pipe and input or output end as exchanging;
The anode link of the 6th Interface Terminal as described second clamp diode is drawn between the emitter of described 3rd power switch pipe and the collector electrode of described 4th power switch pipe.
Alternatively:
The corner of described shell is provided with groove, and is respectively arranged with perforate in the bottom surface of described scalloped recess.
Alternatively:
In described 6 Interface Terminals, every three one rows are evenly distributed on the upper surface of described shell, and wherein a row is followed successively by positive bus-bar splicing ear, bus mid point splicing ear, negative busbar splicing ear, and the Interface Terminal in the middle of another row is that interchange inputs or outputs terminal.
Alternatively:
Described 4 power switch pipes are IGBT.
Second aspect present invention provides a kind of three-level topology device, comprises power model:
The three level power semiconductor modular of described power model for providing in first aspect present invention.
Alternatively:
Described three-level topology device is rectifier, inverter, power cell or frequency converter.
As can be seen from the above technical solutions, the utility model embodiment has the following advantages: three level power semiconductor modular comprises by 4 power switch pipes, 4 fly-wheel diodes and 2 clamp diodes are packaged together the single-phase three level power model of formation one, because this power semiconductor is by 4 power switch pipes, 4 fly-wheel diodes and 2 clamp diodes are encapsulated in a shell, namely the single phase circuit structure of three-level topology circuit from original by 2 general IGBT module and 1 clamp diode module totally 3 module compositions, reduce to and be made up of a three level power semiconductor modular, thus decrease annexation complicated between each module, simultaneously, due to the minimizing of module number, also make to use the power cell of this three level power semiconductor modular and middle pressure, the volume of high voltage converter is less.
Accompanying drawing explanation
Fig. 1 is the single phase circuit structural representation of existing three-level topology circuit;
Fig. 2 is an embodiment schematic diagram of three level power semiconductor modular in the utility model;
Fig. 3 is another embodiment schematic diagram of three level power semiconductor modular in the utility model;
Fig. 4 is an embodiment schematic diagram of three-level topology device in the utility model.
Embodiment
The utility model embodiment provides a kind of three level power semiconductor modular, when using logical module to build three-level topology circuit for simplifying, complicated annexation between each module, and the quantity reducing module, thus reduce the volume based on the device of three-level topology circuit.
The utility model scheme is understood better in order to make those skilled in the art person, below in conjunction with the accompanying drawing in the utility model embodiment, technical scheme in the utility model embodiment is clearly and completely described, obviously, described embodiment is only the embodiment of the utility model part, instead of whole embodiments.Based on the embodiment in the utility model, those of ordinary skill in the art are not making the every other embodiment obtained under creative work prerequisite, all should belong to the scope of the utility model protection.
Term " first ", " second ", " the 3rd " " 4th " etc. (if existence) in specification of the present utility model and claims and above-mentioned accompanying drawing are for distinguishing similar object, and need not be used for describing specific order or precedence.The embodiments described herein should be appreciated that the data used like this can be exchanged in the appropriate case, so that can be implemented with the order except the content except here diagram or description.In addition, term " comprises " and " having " and their any distortion, intention is to cover not exclusive comprising, such as, contain those steps or unit that the process of series of steps or unit, method, system, product or equipment is not necessarily limited to clearly list, but can comprise clearly do not list or for intrinsic other step of these processes, method, product or equipment or unit.
Refer to Fig. 2, in the utility model embodiment, an embodiment of three level power semiconductor modular comprises:
Three level power semiconductor modular comprises shell 201, and 2 clamp diodes, 4 power switch pipes and 4 fly-wheel diodes are encapsulated in the inside of shell 201;
6 Interface Terminals 202, these 6 Interface Terminals 202 are arranged on shell 201 surface;
Drive singal terminal 203, is arranged on the both sides of shell 201.
In the utility model embodiment, drive singal terminal 203 drives the power switch pipe in three level semiconductor module specifically for connection drive circuit board.
It should be noted that, the utility model embodiment can also arrange groove in the corner of three level power semiconductor modular, and perforate is set in the bottom surface of this groove, in actual applications, the shape of this groove and perforate can be arbitrary shape, can be such as scalloped recess, round hole, specifically not limit herein.
It should be noted that, in the present embodiment and subsequent embodiment, 6 Interface Terminals 202 are arranged on shell 201 surface and can are specifically: in 6 Interface Terminals, every three one rows are arranged on shell 201 surface, wherein a row is followed successively by positive bus-bar splicing ear, bus mid point splicing ear, negative busbar splicing ear, Interface Terminal in the middle of another row is that interchange inputs or outputs terminal, in actual applications, also can there be other set-up modes, specifically do not limit herein.
In the utility model embodiment, three level power semiconductor modular comprises by 4 power switch pipes, 4 fly-wheel diodes and 2 clamp diodes are packaged together the single-phase three level power model of formation one, because this power semiconductor is by 4 power switch pipes, 4 fly-wheel diodes and 2 clamp diodes are encapsulated in a shell, namely the single phase circuit structure of three-level topology circuit from original by 2 general IGBT module and 1 clamp diode module totally 3 module compositions, reduce to and be made up of a three level power semiconductor modular, thus decrease annexation complicated between each module, simultaneously, due to the minimizing of module number, also make to use the power cell of this three level power semiconductor modular and middle pressure, the volume of high voltage converter is less.
Below the concrete annexation being encapsulated into 4 power switch pipes of three level power semiconductor modular enclosure, 4 fly-wheel diodes and 2 clamp diodes is described in detail:
Refer to Fig. 3, in the utility model embodiment, another embodiment of three level semi-conductor power module comprises:
4 power switch pipes (Q1, Q2, Q3, Q4), 4 fly-wheel diodes (D1, D2, D3, D4) and 2 clamp diodes (D5, D6);
4 power switch pipes are connected in series, wherein the emitter of first power switch pipe (Q1) is connected with the collector electrode of second power switch pipe (Q2), the emitter of second power switch pipe (Q2) is connected with the collector electrode of the 3rd power switch pipe (Q3), and the emitter of the 3rd power switch pipe (Q3) is connected with the collector electrode of the 4th power switch pipe (Q4);
Respectively and be connected between the collector electrode of each power switch pipe and emitter, wherein the anode of fly-wheel diode is connected with the emitter of power switch pipe, and the negative electrode of fly-wheel diode is connected with the collector electrode of power switch pipe for 4 fly-wheel diodes;
2 clamp diodes are connected in series, wherein, the anode of first clamp diode (D5) is connected with the negative electrode of second clamp diode (D6), the negative electrode of first clamp diode (D5) is connected with the emitter of first power switch pipe (Q1), and the anode of second clamp diode (D6) is connected with the collector electrode of the 4th power switch pipe (Q4).
It should be noted that, in the utility model embodiment, 4 power switch pipes (Q1, Q2, Q3, Q4) are IGBT, in actual applications, can be also other switching devices, specifically not limit herein.
In the utility model embodiment, three level power semiconductor modular comprises by 4 power switch pipes, 4 fly-wheel diodes and 2 clamp diodes are packaged together the single-phase three level power model of formation one, because this power semiconductor is by 4 power switch pipes, 4 fly-wheel diodes and 2 clamp diodes are encapsulated in a shell, namely the single phase circuit structure of three-level topology circuit from original by 2 general IGBT module and 1 clamp diode module totally 3 module compositions, reduce to and be made up of a three level power semiconductor modular, thus decrease annexation complicated between each module, simultaneously, due to the minimizing of module number, also make to use the power cell of this three level power semiconductor modular and middle pressure, the volume of high voltage converter is less.
It should be noted that, based in the embodiment shown in Fig. 2, in the utility model embodiment, 6 Interface Terminals of three level power semiconductor modular can be specifically:
The collector electrode of first power switch pipe (Q1) draws first interface terminal (1) as positive bus-bar link;
The second Interface Terminal (2) is drawn as bus mid point link between the anode of first clamp diode (D5) and the negative electrode of second clamp diode (D6);
The emitter of the 4th power switch pipe (Q4) draws the 3rd Interface Terminal (3) as negative busbar link;
The cathode connection terminal of the 4th Interface Terminal (4) as first clamp diode (D5) is drawn between the emitter of first power switch pipe (Q1) and the collector electrode of second power switch pipe (Q2);
Draw the 5th Interface Terminal (5) between the emitter of second power switch pipe (Q2) and the collector electrode of the 3rd power switch pipe (Q3) and input or output end as exchanging;
The anode link of the 6th Interface Terminal (6) as second clamp diode (D6) is drawn between the emitter of the 3rd power switch pipe (Q5) and the collector electrode of the 4th power switch pipe (Q4).
Be described three-level topology device in the utility model embodiment below, refer to Fig. 4, in the utility model embodiment, an embodiment of three-level topology device comprises:
Power model 401, the structure of this power model 401 and to realize the embodiment shown in principle to Fig. 2 and Fig. 3 similar, repeats no more herein.
It should be noted that, in actual applications, three-level topology device can be rectifier, inverter, power cell, frequency converter, can be also other devices, specifically not limit herein.
Those skilled in the art can be well understood to, and for convenience and simplicity of description, the system of foregoing description, the specific works process of device and unit, with reference to the corresponding process in preceding method embodiment, can not repeat them here.
In several embodiments that the application provides, should be understood that, disclosed system, apparatus and method, can realize by another way.Such as, device embodiment described above is only schematic, such as, the division of described unit, be only a kind of logic function to divide, actual can have other dividing mode when realizing, such as multiple unit or assembly can in conjunction with or another system can be integrated into, or some features can be ignored, or do not perform.Another point, shown or discussed coupling each other or direct-coupling or communication connection can be by some interfaces, and the indirect coupling of device or unit or communication connection can be electrical, machinery or other form.
The described unit illustrated as separating component or can may not be and physically separates, and the parts as unit display can be or may not be physical location, namely can be positioned at a place, or also can be distributed in multiple network element.Some or all of unit wherein can be selected according to the actual needs to realize the object of the present embodiment scheme.
The above, above embodiment only in order to the technical solution of the utility model to be described, is not intended to limit; Although be described in detail the utility model with reference to previous embodiment, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein portion of techniques feature; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the spirit and scope of each embodiment technical scheme of the utility model.
Claims (8)
1. a three level power semiconductor modular, comprises 2 clamp diodes, 4 power switch pipes and 4 fly-wheel diodes, it is characterized in that: described three level power semiconductor modular comprises:
Shell, described 2 clamp diodes, 4 power switch pipes and 4 fly-wheel diodes are encapsulated in the inside of described shell;
6 Interface Terminals, described 6 Interface Terminals are arranged on the surface of described shell;
Drive singal terminal, described drive singal terminal is arranged on the both sides of described shell.
2. three level power semiconductor modular according to claim 1, it is characterized in that, described 4 power switch pipes are connected in series, wherein the emitter of first power switch pipe is connected with the collector electrode of second power switch pipe, the emitter of second power switch pipe is connected with the collector electrode of the 3rd power switch pipe, and the emitter of the 3rd power switch pipe is connected with the collector electrode of the 4th power switch pipe;
Described 4 fly-wheel diodes are respectively and between the collector electrode being connected in power switch pipe described in each and emitter, the anode of wherein said fly-wheel diode is connected with the emitter of described power switch pipe, and the negative electrode of described fly-wheel diode is connected with the collector electrode of described power switch pipe;
Described 2 clamp diodes are connected in series, wherein, the anode of first clamp diode is connected with the negative electrode of the second clamp diode, the negative electrode of first clamp diode is connected with the emitter of described first power switch pipe, and the anode of second clamp diode is connected with the collector electrode of described 4th power switch pipe.
3. three level power semiconductor modular according to claim 2, is characterized in that, described 6 Interface Terminals are specially:
The collector electrode of described first power switch pipe draws first interface terminal as positive bus-bar link;
The second Interface Terminal is drawn as bus mid point link between the anode of described first clamp diode and the negative electrode of described second clamp diode;
The emitter of described 4th power switch pipe draws the 3rd Interface Terminal as negative busbar link;
The cathode connection terminal of the 4th Interface Terminal as described first clamp diode is drawn between the emitter of described first power switch pipe and the collector electrode of described second power switch pipe;
Draw the 5th Interface Terminal between the emitter of described second power switch pipe and the collector electrode of described 3rd power switch pipe and input or output end as exchanging;
The anode link of the 6th Interface Terminal as described second clamp diode is drawn between the emitter of described 3rd power switch pipe and the collector electrode of described 4th power switch pipe.
4. three level power semiconductor modular according to any one of claim 1 to 3, is characterized in that, the corner of described shell is provided with groove, and is respectively arranged with perforate in the bottom surface of described scalloped recess.
5. three level power semiconductor modular according to any one of claim 1 to 3, it is characterized in that, in described 6 Interface Terminals, every three one rows are evenly distributed on the upper surface of described shell, wherein a row is followed successively by positive bus-bar splicing ear, bus mid point splicing ear, negative busbar splicing ear, and the Interface Terminal in the middle of another row is that interchange inputs or outputs terminal.
6. three level power semiconductor modular according to any one of claim 1 to 3, is characterized in that, described 4 power switch pipes are IGBT.
7. a three-level topology device, comprises power model, it is characterized in that: the three level power semiconductor modular of described power model according to any one of claim 1 to 6.
8. three-level topology device according to claim 7, is characterized in that, described three-level topology device is rectifier, inverter, power cell or frequency converter.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520164644.4U CN204578341U (en) | 2015-03-23 | 2015-03-23 | A kind of three level power semiconductor modular and three-level topology device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520164644.4U CN204578341U (en) | 2015-03-23 | 2015-03-23 | A kind of three level power semiconductor modular and three-level topology device |
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| CN204578341U true CN204578341U (en) | 2015-08-19 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106452019A (en) * | 2016-12-01 | 2017-02-22 | 南通沃特光电科技有限公司 | Cooling method of high-voltage inverter power unit |
| CN106533133A (en) * | 2016-12-01 | 2017-03-22 | 南通沃特光电科技有限公司 | Packaging method of high-voltage frequency converter power unit |
-
2015
- 2015-03-23 CN CN201520164644.4U patent/CN204578341U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106452019A (en) * | 2016-12-01 | 2017-02-22 | 南通沃特光电科技有限公司 | Cooling method of high-voltage inverter power unit |
| CN106533133A (en) * | 2016-12-01 | 2017-03-22 | 南通沃特光电科技有限公司 | Packaging method of high-voltage frequency converter power unit |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20160112 Address after: 215163 No. 189, Kunlun Road, science and Technology City, Suzhou hi tech Industrial Development Zone, Jiangsu Patentee after: INVT POWER ELECTRONICS (SUZHOU) Co.,Ltd. Address before: 518055 Nanshan District, Shenzhen Province, Longjing high tech Industrial Park, No. 4 plant on the ground floor, No. Patentee before: SHENZHEN INVT ELECTRIC Co.,Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150819 |
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| CF01 | Termination of patent right due to non-payment of annual fee |