CN102735926B - Frequency detector based on micro-mechanical gallium arsenide-based clamped beam and detection method - Google Patents
Frequency detector based on micro-mechanical gallium arsenide-based clamped beam and detection method Download PDFInfo
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Abstract
The invention discloses a frequency detector based on a micro-mechanical gallium arsenide-based clamped beam and a detection method. The frequency detector comprises a power divider (PD), a 90-DEG phase shifter (PS), a low-pass filter (F) and a gallium arsenide metal-oxide-semiconductor field effect transistor, wherein the power divider is used for receiving a microwave signal to be detected, dividing the microwave signal to be detected into two branch signals with the same amplitude and phase, namely a first path of microwave signal and a second path of microwave signal, and respectively outputting the two paths of microwave signal to the gallium arsenide metal-oxide-semiconductor field effect transistor and the 90-DEG phase shifter. The method comprises the following steps of: when direct current offset is loaded to a first pull-down electrode (81) and a second pull-down electrode (82), and a cantilever beam (6) is pulled down and contacted with a gate (4), simultaneously loading the two paths of microwave signals to the gate (4); and through a capacitor and a filter, detecting the size of the saturation current of a source (2) and a drain (3), so frequency measurement is realized. The invention has the advantage of simple structure.
Description
Technical Field
The invention provides a frequency detector based on a micromechanical gallium arsenide-based clamped beam and a preparation method thereof, belonging to the technical field of micro-electro-mechanical systems (MEMS).
Background
Microwave frequency is a very important parameter of microwaves. The microwave signal frequency detection system has extremely wide application in the aspects of radar, wireless communication and the like. The existing microwave frequency detection technology is mainly based on the principles of heterodyne method, counting method, resonance method and the like, and has the advantages of high precision and wide frequency band, but the biggest disadvantage is that a relatively precise measuring instrument is required. With the development of scientific technology, modern personal communication systems require microwave frequency detectors with simple structures, small volumes and low dc power consumption. In recent years, with the rapid development of the MEMS technology and the intensive research on the MEMS clamped beam structure, it is possible to realize the above-mentioned function of the microwave frequency detector based on the micro-mechanical gallium arsenide-based clamped beam.
Disclosure of Invention
The technical problem is as follows:the invention aims to provide a frequency detector and a detection method based on a micromechanical gallium arsenide-based clamped beam.
The technical scheme is as follows:in order to solve the technical problem, the invention provides a frequency detector based on a micromechanical gallium arsenide-based clamped beam, which comprises
A power divider, a 90-degree phase shifter, a low-pass filter and a gallium arsenide metal semiconductor field effect transistor,
the power divider is used for receiving the microwave signal to be detected, dividing the microwave signal to be detected into two branch signals with the same amplitude and phase, namely a first branch microwave signal and a second branch microwave signal, and respectively outputting the two branch signals to the gallium arsenide metal semiconductor field effect transistor and the 90-degree phase shifter;
the 90-degree phase shifter is used for receiving the second path of microwave signal, generating a phase shift which is in direct proportion to the frequency for the signal, and outputting a third path of microwave signal to the gallium arsenide metal semiconductor field effect transistor;
the low-pass filter is connected with the gallium arsenide metal semiconductor field effect transistor through the blocking capacitor, filters out high-frequency signals output by the low-pass filter and obtains current signals related to frequency;
the gallium arsenide metal semiconductor field effect transistor is used for realizing the measurement of frequency; wherein,
the gallium arsenide metal semiconductor field effect transistor comprises a gallium arsenide substrate, a source electrode and a drain electrode which grow on the surface of the gallium arsenide substrate and are used for outputting saturation current, wherein the source electrode and the drain electrode are arranged oppositely, a first clamped beam anchor area is arranged on the outer side of the source electrode and the outer side of the drain electrode respectively, a second clamped beam anchor area is arranged on a grid electrode between the source electrode and the drain electrode, a clamped beam which is arranged above the grid electrode and is opposite to the grid electrode is arranged, and two sides of the clamped beam are connected with the first clamped beam anchor area and the second clamped beam anchor area respectively;
a first pull-down electrode is arranged between the grid and the first fixed beam anchor area, a second pull-down electrode is arranged between the grid and the second fixed beam anchor area, and the first pull-down electrode and the second pull-down electrode are respectively covered by insulating medium layers;
the source electrode is grounded, and the drain electrode is connected with a positive voltage; the source electrode is communicated with the drain electrode through an N-type channel, and the current direction is from the drain electrode to the source electrode; the source electrode and the drain electrode are formed by ohmic contact regions formed by gold and an N-type heavily doped region;
the grid electrode is connected with a negative voltage and used for adjusting the width of an N-type channel depletion layer and changing the size of saturation current between the source electrode and the drain electrode;
a first path of microwave signal output by the power divider is output to a first clamped beam anchor area;
and outputting the third microwave signal of the 90-degree phase shifter to a second clamped beam anchor area of the gallium arsenide metal semiconductor field effect transistor.
The invention also provides a frequency detection method based on the micromechanical gallium arsenide-based clamped beam, which comprises the following steps:
the source electrode and the drain electrode are used for outputting saturated current and are formed by ohmic contact regions formed by gold and an N-type heavily doped region; when the GaAs metal semiconductor field effect transistor works normally, the source electrode is grounded, the drain electrode is connected with a positive voltage, electrons in the N-type channel flow from the source electrode to the drain electrode, the current direction is from the drain electrode to the source electrode, the grid electrode is formed by a Schottky contact area formed by gold and an N-type thin layer, and the grid electrode is connected with a negative voltage;
the microwave signal to be measured is divided into two branch signals with the same amplitude and phase through a power divider, one branch signal is connected to a first clamped beam anchor area, and the other branch signal is connected to a second clamped beam anchor area after passing through a 90-degree linear phase shifter; when the first pull-down electrode and the second pull-down electrode are not biased by direct current, the clamped beam is positioned above the grid, and the gallium arsenide metal semiconductor field effect transistor is in a non-frequency detection state;
when the first pull-down electrode and the second pull-down electrode are loaded with direct current biases, the clamped beam is pulled down and is in contact with the grid electrode, and two paths of microwave signals are simultaneously loaded on the grid electrode, so that the magnitude of saturation current between the source electrode and the drain electrode is changed; after passing through a capacitor and a filter, the magnitude of the source-drain saturation current is detected, and finally the frequency is measured.
Has the advantages that:the frequency detector based on the micromechanical gallium arsenide-based clamped beam not only has the advantages of small volume, simple structure and easiness in measurement, but also has the advantages of low direct-current power consumption, easiness in integration and compatibility with a GaAs monolithic microwave integrated circuit.
Drawings
FIG. 1 is a top view of a micromechanical GaAs-based clamped beam-based frequency detector;
FIG. 2 is a cross-sectional view A-A of a micromechanical GaAs-based clamped beam-based frequency detector;
FIG. 3 is a B-B cross-sectional view of a micromechanical GaAs-based clamped beam-based frequency detector;
the figure includes: GaAs substrate 1, source 2, drain 3, gate 4, N-type channel
5, an MEMS clamped beam 6, an anchor area 7 of the MEMS clamped beam, a pull-down electrode 8 of the MEMS clamped beam, a silicon nitride dielectric layer 9, a connecting wire 10, a direct current bias pressure welding block 11, a first microwave input pressure welding block 12 and a second microwave input pressure welding block 13.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
Referring to fig. 1-3, the invention provides a frequency detector based on a micromechanical gallium arsenide-based clamped beam, which comprises
A power divider PD, a 90-degree phase shifter PS, a low-pass filter F and a gallium arsenide metal semiconductor field effect transistor,
the power divider is used for receiving the microwave signal to be detected, dividing the microwave signal to be detected into two branch signals with the same amplitude and phase, namely a first branch microwave signal and a second branch microwave signal, and respectively outputting the two branch signals to the gallium arsenide metal semiconductor field effect transistor and the 90-degree phase shifter;
the 90-degree phase shifter is used for receiving the second path of microwave signal, generating a phase shift which is in direct proportion to the frequency for the signal, and outputting a third path of microwave signal to the gallium arsenide metal semiconductor field effect transistor;
the low-pass filter is connected with the gallium arsenide metal semiconductor field effect transistor through the blocking capacitor, filters out high-frequency signals output by the low-pass filter and obtains current signals related to frequency;
the gallium arsenide metal semiconductor field effect transistor is used for realizing the measurement of frequency; wherein,
the gallium arsenide metal semiconductor field effect transistor comprises a gallium arsenide substrate 1, a source electrode 2 and a drain electrode 3 which are grown on the surface of the gallium arsenide substrate 1 and used for outputting saturation current, wherein the source electrode 2 and the drain electrode 3 are arranged oppositely, a first clamped beam anchor area 71 and a second clamped beam anchor area 72 are respectively arranged on the outer sides of the source electrode 2 and the drain electrode 3, a grid electrode 4 is arranged between the source electrode 2 and the drain electrode 3, a clamped beam 6 is arranged above the grid electrode 4 and opposite to the grid electrode 4, and two sides of the clamped beam 6 are respectively connected with the first clamped beam anchor area 71 and the second clamped beam anchor area 72;
a first pull-down electrode 81 is arranged between the grid 4 and the first fixed beam anchor area 71, a second pull-down electrode 82 is arranged between the grid 5 and the second fixed beam anchor area 72, and the first pull-down electrode 81 and the second pull-down electrode 82 are respectively covered by an insulating medium layer 9;
the source electrode 2 is grounded, and the drain electrode 3 is connected with a positive voltage; the source electrode 2 is communicated with the drain electrode 3 through an N-type channel 5, and the current direction is from the drain electrode 3 to the source electrode 2; the source electrode 2 and the drain electrode 3 are formed by ohmic contact regions formed by gold and N-type heavily doped regions;
the grid 4 is formed by a Schottky contact region formed by gold and an N-type thin layer, the grid 4 is connected with a negative voltage and is used for adjusting the width of a depletion layer of an N-type channel 5 and changing the size of saturation current between the source 2 and the drain 3;
a first path of microwave signals output by the power divider are output to a first clamped beam anchor area 71;
and the third microwave signal of the 90-degree phase shifter is output to a second clamped beam anchor area 72 of the gallium arsenide metal semiconductor field effect transistor.
The invention also provides a frequency detection method based on the micromechanical gallium arsenide-based clamped beam, which comprises the following steps:
the source electrode 2 and the drain electrode 3 are used for outputting saturated current and are formed by ohmic contact regions formed by gold and an N-type heavily doped region; when the GaAs metal semiconductor field effect transistor works normally, the source electrode 2 is grounded, the drain electrode 3 is connected with a positive voltage, electrons in the N-type channel flow from the source electrode 2 to the drain electrode 3, the current direction is from the drain electrode 3 to the source electrode 2, the grid electrode 4 is formed by a Schottky contact area formed by gold and an N-type thin layer, and the Schottky contact area is connected with a negative voltage;
a microwave signal to be detected is divided into two branch signals with the same amplitude and phase through a power divider PD, one branch signal is connected to a first clamped beam anchor area 71, and the other branch signal is connected to a second clamped beam anchor area 72 after passing through a 90-degree linear phase shifter; when the first pull-down electrode 81 and the second pull-down electrode 82 are not biased by direct current, the clamped beam 6 is positioned above the grid 4, and the gallium arsenide metal semiconductor field effect transistor is in a non-frequency detection state;
when the first pull-down electrode 81 and the second pull-down electrode 82 are loaded with direct current biases, the clamped beam 6 is pulled down and is in contact with the grid 4, two paths of microwave signals are simultaneously loaded on the grid 4, and therefore the saturation current between the source 2 and the drain 3 is changed; after passing through a capacitor and a filter, the magnitude of the saturation current of the source electrode 2 and the drain electrode 3 is detected, and finally the frequency is measured.
The frequency detector based on the micromechanical gallium arsenide-based clamped beam mainly comprises two parts, namely a MESFET structure and an MEMS clamped beam structure. The MESFET comprises a source electrode, a drain electrode, a grid electrode and an N-type channel; the MEMS clamped beam structure comprises an MEMS clamped beam, an anchor area of the beam, a pull-down electrode and a dielectric layer. The structure takes GaAs as a substrate:
and the source electrode and the drain electrode are used for detecting the magnitude of the saturation current and are formed by forming an ohmic contact region by gold and an N-type heavily doped region. When the GaAs MESFET works normally, the source is grounded, the drain is connected with positive voltage, and the N-type channel
Will flow from source to drain and the current flow direction is from drain to source.
The grid electrode is formed by a Schottky contact area formed by gold and the N-type thin layer, and is connected with a negative voltage. The negative polarity grid is used for adjusting the width of a channel depletion layer and changing the magnitude of saturation current between a source electrode and a drain electrode.
The frequency detector is provided with an MEMS clamped beam structure which spans a grid, two pull-down electrodes are positioned below the clamped beam and distributed on two sides of the grid, and insulating dielectric silicon nitride covers the pull-down electrodes. The microwave signal to be measured is divided into two branch signals with the same amplitude and phase through the power divider, and the two branch signals are respectively connected to the corresponding pressure welding blocks. When the two pull-down electrodes are not biased by direct current, the MEMS clamped beam is positioned in an up state, and the saturation current between the source and the drain of the GaAs MESFET is unchanged; when the two pull-down electrodes are loaded with direct current bias to pull down the MEMS clamped beam to be contacted with the grid electrode, the signal of the first branch and the signal of the second branch are simultaneously loaded on the grid electrode of the GaAs MESFET through the MEMS clamped beam after passing through the 90-degree phase shifter, so that the magnitude of the saturation current between the source electrode and the drain electrode is changed. Therefore, after passing through a capacitor and a filter, the magnitude of the source-drain saturation current is detected, and finally the measurement of the microwave signal frequency can be realized.
The specific embodiment of the frequency detector based on the micromechanical gallium arsenide-based clamped beam disclosed by the invention is as follows:
a source electrode 2, a drain electrode 3, a grid electrode 4, an N-type channel 5, an MEMS clamped beam anchor region 7 and a pull-down electrode 8 are arranged on the GaAs substrate 1.
The source electrode 2 and the drain electrode 3 are used for detecting the magnitude of saturation current and are formed by forming ohmic contact regions by gold and N-type heavily doped regions. When the GaAs MESFET is operating normally, the source 2 is connected to ground, the drain 3 is connected to a positive voltage, and electrons in the N-type channel flow from the source 2 to the drain 3, from the drain 3 to the source 2.
The grid 4 is formed by a Schottky contact area formed by gold and an N-type thin layer, and the grid 4 is connected with a negative voltage. The negative polarity gate 4 is used for adjusting the width of the depletion layer of the channel 5 and changing the magnitude of the saturation current between the source 2 and the drain 3.
The frequency detector has a MEMS clamped beam structure 6 which spans the grid 4, two pull-down electrodes 8 are arranged below the clamped beam 6 and distributed on two sides of the grid 4, and an insulating dielectric silicon nitride 9 covers the pull-down electrodes 8. The microwave signal to be measured is divided into two branch signals with the same amplitude and phase through the power divider, and the two branch signals are respectively connected to the corresponding pressure welding blocks 12 and 13. When the two pull-down electrodes are not biased by direct current, the MEMS clamped beam 6 is positioned in an up state, and the saturation current between the source and the drain of the GaAs MESFET is unchanged; when a direct current bias is loaded on the two pull-down electrodes 8 to pull down the MEMS clamped beam 6 to be in contact with the grid 4, a signal of the first branch and a signal of the second branch are simultaneously loaded on the grid 4 of the GaAs MESFET through the MEMS clamped beam 6 after passing through the 90-degree phase shifter, so that the saturation current between the source 2 and the drain 3 is changed. Therefore, after passing through a capacitor and a filter, the magnitude of the saturation current of the source electrode 2 and the drain electrode 3 is detected, and finally the measurement of the frequencies of the two signals is realized.
The preparation method of the frequency detector based on the micromechanical gallium arsenide-based clamped beam comprises the following steps:
1) preparing a semi-insulating GaAs substrate;
2) injecting N-type impurities to form an N-type thin layer on the surface of the GaAs;
3) photoetching a gate region, and removing the photoresist outside the gate region;
4) electron beam evaporation of titanium/platinum/gold;
5) stripping the titanium/platinum/gold outside the gate region;
6) heating the evaporated titanium/platinum/gold to form a Schottky barrier region and form a grid;
7) heavily doped N-type impurities are injected into the region where the source electrode and the drain electrode need to be formed to form an N-type heavily doped region;
8) carrying out rapid annealing treatment on the N-type heavily doped region;
9) photoetching the source electrode and the drain electrode, and removing the photoresist outside the source electrode and the drain electrode;
10) vacuum evaporating gold, germanium, nickel and gold;
11) stripping the gold, germanium, nickel and gold outside the source region and the drain region;
12) alloying to form ohmic contact and forming a source electrode and a drain electrode;
13) photoetching: removing the photoresist at the positions where the pull-down electrode, the anchor area of the MEMS clamped beam, the pressure welding block and the connecting wire are to be reserved;
14) evaporating a first layer of gold having a thickness of 0.3μm；
15) Stripping off gold except the pull-down electrode 8, the cantilever beam anchor area 7, the press welding block and the connecting wire to form the pull-down electrode, the MEMS clamped beam anchor area, the press welding block and the connecting wire;
16) depositing and photoetching a polyimide sacrificial layer: coating 1.6 on GaAs substrateμmThe thick polyimide sacrificial layer is required to fill the pits, and the thickness of the polyimide sacrificial layer determines the distance between the MEMS clamped beam and a silicon nitride dielectric layer below the MEMS clamped beam on the pull-down electrode; photoetching a polyimide sacrificial layer, and only reserving the sacrificial layer below the clamped beam;
17) titanium/gold/titanium was evaporated with a thickness of 500/1500/300 a: evaporating the bottom gold for electroplating;
18) photoetching: removing the photoresist at the position to be electroplated;
19) gold plating of thickness 2μm；
20) Removing the photoresist: removing the photoresist at the position where electroplating is not needed;
21) reversely etching titanium/gold/titanium, and corroding bottom gold to form an MEMS clamped beam;
22) releasing the polyimide sacrificial layer: and (3) soaking in a developing solution, removing the polyimide sacrificial layer below the MEMS clamped beam, slightly soaking in deionized water, dehydrating with absolute ethyl alcohol, volatilizing at normal temperature, and drying.
The criteria for distinguishing whether this structure is present are as follows:
the frequency detector based on the micromechanical gallium arsenide-based clamped beam provided by the invention has the advantages that the MEMS clamped beam spans over the grid of the MESFET, two pull-down electrodes are designed below the MEMS clamped beam, when direct current bias is loaded on the pull-down electrodes, the MEMS clamped beam is pulled down, the middle part of the MEMS clamped beam is contacted with the grid, a signal to be detected is divided into two paths of signals with the same amplitude and phase through a power divider, wherein the signal passing through a first branch of a 90-degree phase shifter and the signal passing through a second branch of the 90-degree phase shifter are simultaneously loaded on the grid of the GaAs MESFET through the MEMS clamped beam, so that the magnitude of saturation current between a source and a drain is controlled, and the detection of the frequency of a microwave signal is finally realized.
The structure meeting the above conditions is regarded as the frequency detector based on the micromechanical gallium arsenide-based clamped beam.
The above description is only a preferred embodiment of the present invention, and the scope of the present invention is not limited to the above embodiment, but equivalent modifications or changes made by those skilled in the art according to the present disclosure should be included in the scope of the present invention as set forth in the appended claims.
Claims (2)
1. A frequency detector based on a micromechanical gallium arsenide-based clamped beam is characterized in that: the frequency detector comprises
A Power Divider (PD), a 90-degree Phase Shifter (PS), a low-pass filter (F) and a gallium arsenide metal semiconductor field effect transistor (GaAs MOSFET),
the power divider is used for receiving the microwave signal to be detected, dividing the microwave signal to be detected into two branch signals with the same amplitude and phase, namely a first branch microwave signal and a second branch microwave signal, and respectively outputting the two branch signals to the gallium arsenide metal semiconductor field effect transistor and the 90-degree phase shifter;
the 90-degree phase shifter is used for receiving the second path of microwave signal, generating a phase shift which is in direct proportion to the frequency for the signal, and outputting a third path of microwave signal to the gallium arsenide metal semiconductor field effect transistor;
the low-pass filter is connected with the gallium arsenide metal semiconductor field effect transistor through the blocking capacitor, filters out high-frequency signals output by the low-pass filter and obtains current signals related to frequency;
the gallium arsenide metal semiconductor field effect transistor is used for realizing the measurement of frequency; wherein,
the gallium arsenide metal semiconductor field effect transistor comprises a gallium arsenide substrate (1), a source electrode (2) and a drain electrode (3) which are grown on the surface of the gallium arsenide substrate (1) and used for outputting saturation current, wherein the source electrode (2) and the drain electrode (3) are arranged oppositely, a first clamped beam anchor region (71), a second clamped beam anchor region (72), a grid electrode (4) arranged between the source electrode (2) and the drain electrode (3), a clamped beam (6) which is arranged above the grid electrode (4) and opposite to the grid electrode (4) are respectively arranged on the outer sides of the source electrode (2) and the drain electrode (3), and two sides of the clamped beam (6) are respectively connected with the first clamped beam anchor region (71) and the second clamped beam anchor region (72);
a first pull-down electrode (81) is arranged between the grid (4) and the first fixed beam anchor area (71), a second pull-down electrode (82) is arranged between the grid (5) and the second fixed beam anchor area (72), and the first pull-down electrode (81) and the second pull-down electrode (82) are respectively covered by a silicon nitride dielectric layer (9);
the source electrode (2) is grounded, and the drain electrode (3) is connected with a positive voltage; the source electrode (2) and the drain electrode (3) are communicated through an N-type channel (5), and the current direction is from the drain electrode (3) to the source electrode (2); the source electrode (2) and the drain electrode (3) are formed by ohmic contact regions formed by gold and N-type heavily doped regions;
the grid (4) is formed by a Schottky contact region formed by gold and an N-type thin layer, the grid (4) is connected with a negative voltage and is used for adjusting the width of a depletion layer of the N-type channel (5) and changing the size of saturation current between the source (2) and the drain (3);
a first path of microwave signal output by the power divider is output to a first clamped beam anchor area (71);
and the third microwave signal of the 90-degree phase shifter is output to a second clamped beam anchor area (72) of the gallium arsenide metal semiconductor field effect transistor.
2. The frequency detection method of the micromechanical gallium arsenide based clamped beam based frequency detector according to claim 1, comprising the steps of:
the source electrode (2) and the drain electrode (3) are used for outputting saturated current and are formed by forming an ohmic contact region by gold and an N-type heavily doped region; when the GaAs metal semiconductor field effect transistor works normally, the source electrode (2) is grounded, the drain electrode (3) is connected with a positive voltage, electrons in the N-type channel flow from the source electrode (2) to the drain electrode (3), the current direction is from the drain electrode (3) to the source electrode (2), the grid electrode (4) is formed by a Schottky contact region formed by gold and an N-type thin layer, and the Schottky contact region is connected with a negative voltage;
a microwave signal to be detected is divided into two branch signals with the same amplitude and phase through a Power Divider (PD), one branch signal is connected to a first clamped beam anchor area (71), and the other branch signal is connected to a second clamped beam anchor area (72) after passing through a 90-degree linear phase shifter; when the first pull-down electrode (81) and the second pull-down electrode (82) are not biased by direct current, the clamped beam (6) is positioned above the grid (4), and the gallium arsenide metal semiconductor field effect transistor is in a non-frequency detection state;
when the first pull-down electrode (81) and the second pull-down electrode (82) are loaded with direct current bias, the clamped beam (6) is pulled down and is in contact with the grid (4), two paths of microwave signals are simultaneously loaded on the grid (4), and therefore the size of saturation current between the source (2) and the drain (3) is changed; after passing through a capacitor and a filter, the magnitude of the saturation current of the source electrode (2) and the drain electrode (3) is detected, and finally the frequency is measured.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210204654.7A CN102735926B (en) | 2012-06-20 | 2012-06-20 | Frequency detector based on micro-mechanical gallium arsenide-based clamped beam and detection method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210204654.7A CN102735926B (en) | 2012-06-20 | 2012-06-20 | Frequency detector based on micro-mechanical gallium arsenide-based clamped beam and detection method |
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| CN104950170B (en) * | 2015-07-01 | 2017-10-10 | 东南大学 | Based on the double clamped beam switching frequency detectors of GaAs bases low-leakage current |
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| CN105099374B (en) * | 2015-07-01 | 2017-12-05 | 东南大学 | Gallium nitride base low-leakage current cantilever switch difference amplifier |
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