CN102728580A - Substrate cleaning apparatus and vacuum processing system - Google Patents

Substrate cleaning apparatus and vacuum processing system Download PDF

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Publication number
CN102728580A
CN102728580A CN2012100867864A CN201210086786A CN102728580A CN 102728580 A CN102728580 A CN 102728580A CN 2012100867864 A CN2012100867864 A CN 2012100867864A CN 201210086786 A CN201210086786 A CN 201210086786A CN 102728580 A CN102728580 A CN 102728580A
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CN
China
Prior art keywords
gas
substrate
wafer
base plate
periphery
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CN2012100867864A
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Chinese (zh)
Inventor
土桥和也
井内健介
清水昭贵
安田健太
吉野裕
相田敏广
妹尾武彦
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Tokyo Electron Ltd
Iwatani Corp
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Tokyo Electron Ltd
Iwatani Sangyo KK
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Application filed by Tokyo Electron Ltd, Iwatani Sangyo KK filed Critical Tokyo Electron Ltd
Publication of CN102728580A publication Critical patent/CN102728580A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45582—Expansion of gas before it reaches the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)

Abstract

A substrate cleaning apparatus includes a supporting unit, provided in a processing chamber having a gas exhaust port, for supporting a substrate; one or more nozzle units, each for ejecting gas clusters to a peripheral portion of the substrate supported by the supporting unit to remove unnecessary substances from the peripheral portion; and a moving mechanism for changing relative positions of the supporting unit and the nozzle unit during ejecting the gas clusters. Each nozzle unit discharges a cleaning gas having a pressure higher than that in the processing chamber so that the cleaning gas is adiabatically expanded to form aggregates of atoms and/or molecules.

Description

Base plate cleaning device and vacuum flush system
Technical field
The present invention relates to the technology of the periphery of cleaning base plate.
Background technology
In the manufacturing process of semiconductor device, studied semiconductor crystal wafer (below, be called wafer.) form mask against corrosion above that behind the laminated multilayer film, use this mask against corrosion and utilizing the pairing etching gas of each film on above-mentioned multilayer film, to form the operation of hole, groove on the independent Etaching device.In this series of processes, after forming multilayer film on the wafer, utilize wet type washing device to remove the film of periphery, on multilayer film, form the resist pattern afterwards.Therefore, when this wafer of etching, the periphery of wafer exposes base material, is silicon.Therefore, the silicon of the periphery of wafer part is exposed in etching work procedure and causes its surface to be cut, the acute angle projection crowd's who is deformed into needle-like intensive surface state.In addition, the periphery of the rear side of wafer is by plasma irradiating, therefore in the surface attachment of wafer and piled up by plasma and film and react and the reaction products such as for example polymer that generate, and becomes the principal element of undesirable particle generation.
Even desire utilizes plasma cleaning to remove to be formed at the acute angle-shaped jog (acus schooling up) of silicon of periphery of the face side of wafer; Also can have anisotropy owing to the plasma of clean air is difficult to remove; And, when utilizing brush to clean, can't wipe projection crowd T.In addition, in using CMP (Chemical Mechanical Polishing: chemical machinery cuts open light) method, though there is the such problem of surface contamination that makes wafer in the projection crowd that can prune.In addition; For the attachment of the periphery of the rear side that is attached to wafer; Owing to constitute by multiple material; So when carrying out dry cleaning (plasma cleaning), need change clean air according to the material of film, and handle but exist to be subject to the periphery of wafer and to be difficult to, cause the such problem of device zone damage of wafer.And, in wet-cleaned, also have identical problem, the problem that also exists the attachment removed to adhere to again.
On the other hand,, be formed at semiconductor substrate, the etching of its surperficial thin layer, planarization, do not put down in writing for the periphery of cleaning wafer though in patent documentation 1, put down in writing through not making gas-cluster ionization ground irradiation semiconductor substrate.
Patent documentation 1: No. 2010/021265, International Publication
Summary of the invention
The present invention makes under such background just, its purpose be to provide a kind of can be under the state that suppresses the negative effect of the effective coverage of substrate, the not technology at position of the periphery of cleaning base plate well.
Base plate cleaning device of the present invention is characterised in that to possess:
Maintaining part, it is set in the process chamber with exhaust outlet, is used to keep substrate;
Spray nozzle part for the not position of the periphery of removing the substrate that above-mentioned maintaining part keeps, and is used for this periphery irradiation cluster gas; With
Travel mechanism, it is used for when the irradiation of above-mentioned gas group bunch, making above-mentioned maintaining part and said nozzle portion relatively mobile,
Said nozzle portion makes the aggregate that cleans atom that adiabatic expansion forms purge gas or molecule, is cluster gas through the discharge pressure purge gas higher than the pressure in the above-mentioned process chamber.
In addition, vacuum flush system of the present invention possesses:
The vacuum carrying chamber, it is carrying substrate under vacuum environment; With
Vacuum process module, it is connected with this vacuum carrying chamber via separator valve, is used for the surface film that is formed at substrate is carried out dry-etching or on substrate, forms film;
The aforesaid substrate cleaning device is connected with above-mentioned vacuum carrying chamber via separator valve, is used for the periphery of the substrate after above-mentioned vacuum process module is by application of vacuum is cleaned.
The present invention is when the not position of the periphery of removing substrate; Substrate is relatively moved or rotation with respect to spray nozzle part; And supply with group's bunch (aggregate of atom or molecule) of purge gas to above-mentioned not position; The group of this purge gas bunch is through in than the low processing environment of the pressure in the spray nozzle part, discharges purge gas from spray nozzle part and forms.Can shine cluster gas partly, therefore even carry out as the not cleaning at position of removing object, also can be under the state of the pollution that suppresses substrate the periphery of cleaning base plate the and effective coverage in the device zone of substrate etc. not being impacted well.
Description of drawings
Fig. 1 is the vertical view of integral body of the vacuum flush system of expression embodiment of the present invention.
Fig. 2 is the longitudinal section of the summary of the employed base plate cleaning device of the above-mentioned embodiment of expression.
Fig. 3 is the vertical view of the summary of expression aforesaid substrate cleaning device.
Fig. 4 is the longitudinal section that expression is arranged at group's bunch nozzle (cluster nozzle) of aforesaid substrate cleaning device.
Fig. 5 is the longitudinal section of the summary of the above-mentioned group of expression bunch nozzle.
Fig. 6 is the piping diagram that the gas of the above-mentioned group of explanation bunch nozzle is supplied with the summary of system.
Fig. 7 is etched summary is carried out in expression to the multilayer film on the formation wafer in the above-described embodiment a longitudinal section.
Fig. 8 is the action diagram of explanation based on the planarization of the acus schooling up of the periphery 1st bunch of nozzle, wafer in this embodiment.
Fig. 9 is that explanation is based on the action diagram of removing 2nd bunch of nozzle in this embodiment, attachment.
Figure 10 is the vertical view of summary of the aforesaid substrate cleaning device in the variation of this embodiment of expression.
(a) of Figure 11 is the SEM photo on surface that the wafer that the surface in the embodiments of the invention is formed with the acus schooling up is carried out the wafer of cluster gas pre-irradiation; (b) be the SEM photo that the wafer that the surface in the embodiments of the invention is formed with the acus schooling up is carried out the postradiation surface of cluster gas.
The explanation of Reference numeral
The C cluster gas; The molecule of G gas and atom; P is attached to the attachment at the back side of wafer peripheral portion; T is formed at the acus schooling up of the silicon of wafer peripheral portion; The W wafer; 1 atmosphere carrying room; Vacuum carrying chambers 2; The carrying mechanism that 22 vacuum carrying are indoor; 3 Etaching devices; 31 the 1st vacuum chambers; 4 base plate cleaning devices; 41 the 2nd vacuum chambers; 42 electrostatic chucks; 45 exhaust outlets; 5 the 1st bunch nozzles; The angle-adjusting mechanism of 54 the 1st bunch nozzles; 6 the 2nd bunch nozzles; The angle-adjusting mechanism of 64 the 2nd bunch nozzles; 7 cleaning gas nozzles; 8 purge gas are supplied with system; 9 control parts
The specific embodiment
Fig. 1 is that expression has the figure as the vacuum flush system of the base plate cleaning device 4 of embodiment of the present invention.It is rectangular atmosphere carrying room 1 that this vacuum flush system has flat shape.Side's long side in atmosphere carrying room 1 is provided with and is used for that semiconductor (silicon) wafer W is moved into moving into of taking out of and takes out of mouth.Move into take out of mouth have take in a plurality of wafer W, carry be equipped with conveying container, be that FOUP a plurality of move into to take out of platform 13 and be arranged at and respectively move into the door 14 of taking out of platform 13.
And in atmosphere carrying room 1, take out of platform 13 opposition sides with moving into, via about two vacuum Sample Rooms (load lock), 15 (preparatory vacuum chambers) of configuration be that hexagonal vacuum carrying chamber 2 is connected with for example flat shape.Short brink in atmosphere carrying room 1 with have the alignment modules 16 that is used for wafer W is carried out the orienter (orienter) of contraposition and be connected.In atmosphere carrying room 1, have and be used for wafer W is taken out of the carrying mechanism 12 that joins between platform 13, vacuum Sample Room 15 and the alignment modules 16.
Vacuum carrying chamber 2 utilizes not shown vavuum pump with its indoor vacuum environment that remains, and is connected with the 1st vacuum chamber 31 of the processing environment that constitutes Etaching device 3 and the 2nd vacuum chamber 41 that constitutes the processing environment of base plate cleaning device 4.In addition, in this vacuum carrying chamber 2, have be used for carrying mechanism 22 that wafer W is joined between vacuum Sample Room 15, alignment modules 16, Etaching device 3 and base plate cleaning device 4.Wherein, the G1～G3 among Fig. 1 is the gate valve that constitutes separator valve.
In addition; This vacuum flush system has control part 9; The program of the storage part through being stored in this control part 9 and comprise processing method software, carry out wafer W carrying, each gate valve G1～G3 and door 14 switching and carry out processing and the adjustment of vacuum in each vacuum chamber 31,41.
As Etaching device 3; Can use known devices such as capacitive coupling plasma mode, dielectric coil plasma mode; Under the situation of capacitive coupling plasma mode, be constituted as, in vacuum chamber 31, make upper electrode, lower electrode opposed, between two electrodes, apply high frequency and come carry out plasmaization handling gas; Through apply bias voltage to lower electrode the ion in this plasma is directed into the wafer W on the lower electrode, carries out etching with surface to wafer W.
As shown in Figure 2, the 2nd vacuum chamber 41 of base plate cleaning device 4 has the electrostatic chuck 42 that is used for wafer W is adsorbed with flat-hand position maintenance.This electrostatic chuck 42 via rotating shaft 43 be fixed in the bottom of the 2nd vacuum chamber 41 travel mechanism, be rotating mechanism 44 supporting, the wafer W that absorption is kept rotates around vertical axis.
As shown in Figure 3, near the sidewall of the bottom of the 2nd vacuum chamber 41, be provided with the guiding piece 51 that extends along level (directions X among Fig. 3), and be provided with on one side and moved on to the moving body 52 that is driven by not shown ball screw framework and move on one side by this guiding piece 51.As shown in Figure 4, be provided with on the top of this moving body 52 along vertical direction (Z direction among the figure) and extend, and bend to the right angle, with the support unit 53 that extends along level (Y direction among the figure) with the mode of the bearing of trend quadrature of guiding piece in its front.Leading section at this support unit 53 is provided with 1st bunch of nozzle 5 by angle-adjusting mechanism 54 to be positioned at by the mode above the wafer W of electrostatic chuck 42 absorption maintenances.This angle-adjusting mechanism 54 is made up of the driving mechanism that comprises the motor with the rotating shaft 54a that extends along the Y direction, because 1st bunch of nozzle 5 is set at this rotating shaft 54a, therefore can utilize the irradiating angle of angle-adjusting mechanism 54 adjustment cluster gas.
As shown in Figure 5, the base end side that the 1st bunch nozzle 5 has 50, the 1 bunch nozzles 5 in balancing gate pit cylindraceous is connected with the 1st gas flow path 55a that is made up of each pipe arrangement and the 2nd gas flow path 55b.The base end side of the 1st gas flow path 55a is connected with chlorine trifluoride (ClF3) gas supply source 56, between them, is provided with the flow adjustment part 59a and the valve that for example are made up of mass flowmenter.In addition, the base end side of the 2nd gas flow path 55b is connected with argon gas (Ar) gas supply source 57, between them, is provided with the flow adjustment part 59b and the valve that for example are made up of mass flowmenter.And, though not shown, also be provided with the pressure gauge of the pressure in the detected pressures chamber 50, utilize flow control division 59a, 59b and pressure gauge can adjust the flow-rate ratio of pressure, ClF3 gas and Ar gas in the balancing gate pit 50.
ClF3 gas is the principal component from the cluster gas C of 1st bunch of nozzle 5 irradiation, and it can carry out physical property to the acus schooling up T of the silicon of the periphery of wafer W and chemical is pruned and planarization.In addition; For for the Ar gas of inert gas; The pressure of the supply area side through improving 1st bunch of nozzle 5 (in the balancing gate pit 50) increases the velocity of discharge of cluster gas C, as making boosting that its directive property, partial operation property improve use gas.And the pressure of the supply area side through making 1st bunch of nozzle 5 uprises, and the pressure in the 2nd vacuum chamber 41 are also uprised with above-mentioned supply area accordingly, helps the desired vacuum performance of reliever etc.In addition; In Fig. 2; The 1st gas flow path 55a and the 2nd gas flow path 55b are recited as pipe arrangement 55 altogether, and it is 8 that ClF3 gas supply source 56, Ar gas supply source 57, the flow adjustment part 59a, 59b, valve and the pressure gauge that are connected with them are recited as altogether that purge gas supplies with.It is the supply system of 8 2nd bunch of nozzle 6 employed purge gas stating after also comprising that this purge gas is supplied with.
In addition, as shown in Figure 5, the front of the 1st bunch nozzle 5 expands to horn-like.And the outlet of 1st bunch of nozzle 5 that is equivalent to the root unit position of this extension part becomes hole shape, apart from the surface height position of wafer W and to the peripheral horizontal of the wafer W of irradiation cluster gas C apart from being set to for example 10mm and 10mm respectively.As after state; The gas of discharging from 1st bunch of nozzle 5 is through by rapid decompression and adiabatic expansion; Utilize Van der Waals force to make atom, the molecule G be combined into of handling gas be aggregate (cluster gas) C, and irradiation is formed at the acus schooling up T of the periphery of wafer W.
On the other hand, the lower position of the wafer W in the 2nd vacuum chamber 41 is provided with 2nd bunch of nozzle 6 with the mode that can shine cluster gas towards the periphery of wafer W.As shown in Figure 3, the guiding piece 61 of the 2nd bunch nozzle 6 usefulness is configured to, and is opposed and parallel with guiding piece 51 across electrostatic chuck 42.And, be provided with to also have on one side by these guiding piece 61 guiding, by not shown ball screw framework driven and the moving body 62 that move on one side.Be provided with on the top of this moving body 62 along vertical direction (Z direction among Fig. 2) and extend, and bend to the right angle, with the support unit 63 that extends along level (Y direction among Fig. 3) with the mode of the bearing of trend quadrature of guiding in its front.Leading section at this support unit 63 is provided with 2nd bunch of nozzle 6 by angle-adjusting mechanism 64, to be located at the below of the wafer W that is kept by electrostatic chuck 42 absorption.This angle-adjusting mechanism 64 is the driving mechanisms that comprise the motor with the rotating shaft 64a that extends along the Y direction, because 2nd bunch of nozzle 6 is set at this rotating shaft 64a, therefore can utilize the irradiating angle of angle-adjusting mechanism 64 adjustment cluster gas C.
The structure of 2nd bunch of nozzle 6 is identical with 1st bunch of nozzle 5.Wherein, in 2nd bunch of nozzle 6, use ozone (O3) gas, hydrogen fluoride (HF) gas, these 3 kinds of purge gas of ClF3 gas as purge gas.Therefore; Shown in Figure 6 like side; The base end side branch and the supply that is connected to each purge gas that are connected in the pipe arrangement of 2nd bunch of nozzle 6 are 82,83,84; Utilizing valve to switch and separately using the gas supply of these each purge gas is that purge gas in 82,83,84, employed are supplied with system, and mixing Ar gas shines.81 is that Ar gas is supplied with system among the figure.
In addition; Like Fig. 2 and shown in Figure 3, in the 2nd vacuum chamber 41, be provided with cleaning gas nozzle 7 at the upper side of wafer W; This nozzle 7 is constituted as, the air-flow that makes cleaning gas such as Ar gas for example at the irradiation position place of cluster gas C from the central part outward circumferential part ground formation of wafer W.This cleaning gas nozzle 7 constitutes, and can move horizontally along guiding piece 71 directions X in Fig. 3 by support unit 73 and moving body 72, discharges cleaning gas with certain angle to the surface of the wafer W that is kept by electrostatic chuck 42 absorption.In addition, can also angle-adjusting mechanism be arranged at cleaning gas nozzle 7.It is 80 to be connected that this cleaning gas nozzle 7 is supplied with via pipe arrangement and the outer cleaning gas that is arranged at the 2nd vacuum chamber 41.It is 80 to be made up of cleaning gas supply source, flow adjustment part and valve that this cleaning gas is supplied with.
The exhaust outlet 45 of the bottom of the 2nd vacuum chamber 41 is connected with blast pipe 49, and this blast pipe 49 is provided with vavuum pump 47 via pressure adjustment part 46, can carry out the pressure adjustment in the 2nd vacuum chamber 41.
Then, the effect to above-mentioned embodiment describes.At first, will carry by the conveying container that the for example FOUP that takes in wafer W constitutes to place to move into and take out of platform 13, door 14 will be opened with the lid of conveying container.Then, the wafer W in the conveying container is transported to alignment modules 16 by the carrying mechanism 12 in the atmosphere carrying room 1, here, wafer W towards be adjusted to predefined towards.Then, wafer W is moved in the vacuum chamber 31 of Etaching device 3 via the carrying mechanism 22 in carrying mechanism 12, vacuum Sample Room 15, the vacuum carrying chamber 2.
Shown in Fig. 7 (a), at the surperficial range upon range of multilayer film of wafer W, and form mask 100 against corrosion above that, the resist and the multilayer film of the periphery of wafer W are removed, and the base material that has exposed wafer W is a silicon.Multilayer film is constituted as, and for example stacking gradually from downside, metal levels 103 such as silicon oxide layer layer 101, polysilicon layer 102, for example titanium, tungsten are organic film 104 then.In addition, the example of this multilayer film is nothing but an example of enumerating as model for invention is understood easily.In Etaching device 3, according to the kind of film, on one side treatment conditions such as hand-off process gas, pressure, utilize plasma to come the above-mentioned multilayer film of etching successively on one side, to form the pattern corresponding concave part with mask 100 against corrosion.Fig. 7 (b) is the sketch map of the wafer W after the expression etching finishes.As shown in the drawing, at the inclined plane part of the face side of the periphery of wafer W, be formed with and constitute the not projection crowd T of the needle-like at position, at the inclined plane part of its rear side, be attached with not position, the attachment P that constitute by the reaction product that generates when the etching etc.This attachment P is the duplexer of the reaction product corresponding with each film of multilayer film, in this example, is that the sequential cascade of fluorocarbons system (CF system) has each reaction product etc. from the plate face side of wafer W then by organic system, metal system, silicon system.
Then, this wafer W is moved in the 2nd vacuum chamber 41 of base plate cleaning device 4, is kept by electrostatic chuck 42 absorption, and utilizes the rotating mechanism rotation.And, utilize pressure adjustment part 46 with being maintained the for example vacuum environment of 1Pa～100Pa in the 2nd vacuum chamber 41, for example utilize flow adjustment part 59a, 59b with ClF 3Gas and Ar gas are supplied with to 1st bunch of nozzle 5 from gas flow path 55a, 55b respectively with the pressure of 0.3MPa～2.0MPa.The ClF of this moment 3The concentration of gas is set to through flow adjustment part 59a, 59b and for example counts volume %.At the CIF that in 1st bunch of nozzle 5, supplies with under the high pressure conditions of above-mentioned that kind 3Gas and Ar gas is owing to discharged by a gas in the vacuum of the 2nd vacuum chamber 41 in 1st bunch of nozzle 5, so adiabatic expansion and cause the temperature of gas to become below the condensing temperature, in this example, and Ar atom and ClF 3Molecule combines through Van der Waals force, with the aggregate that forms atom and molecule G, be cluster gas C.
This cluster gas C from 1st bunch of nozzle 5 to the axial advancement of 1st bunch of nozzle 5 and be released out (Fig. 8 (a)), towards the acus schooling up T of the periphery that is formed at wafer W and from the direction that tilts and the surface collision of inclined plane part.Like this, cluster gas C is decomposed into other gas molecule and atom G, and gas molecule after this dissociates and atom G are more to be flown (Fig. 8 (b) and (C)) near the angle parallel with the surface than the irradiating angle of cluster gas by bullet.And; This gas molecule and atom G collide also and pasc reaction with the projection of the acus schooling up T that is formed on the surface; Two sides through physical shock and chemical reaction act on like this; The front ends of acus schooling up T is cut, and the face side of the inclined plane part of the periphery of wafer W is by smoothing (Fig. 8 (d)).At this moment, silicon microparticle disperses from the surface element of wafer W, and is discharged to the peripheral direction of wafer W by the cleaning gas that blows out from cleaning gas nozzle 7, and atom, the molecule of the gas that decomposes with wafer W collision are discharged from blast pipe 49.Fig. 8 is that expression utilizes cluster gas C the acus schooling up T of the periphery that is formed at wafer W to be carried out the sketch map of the appearance of planarization.Situation about being flattened through irradiation cluster gas C acus schooling up T like this, will after confirm in the experiment stated.
On the other hand, also be that planarization with above-mentioned acus schooling up T is carried out simultaneously based on removing of the attachment P of 2nd bunch of nozzle 6.For the illuminate condition of the cluster gas such as volumetric concentration of pressure in air pressure in 2nd bunch of nozzle 6, the 2nd vacuum chamber 41, the 2nd bunch nozzle 6 and purge gas, all the condition with above-mentioned 1st bunch of nozzle 5 is identical in described below any gaseous species.At first, shown in Fig. 9 (a), carrying out fluorocarbons is removing of attachment (CF is an attachment) P4.For example utilize the flow adjustment part that O3 gas is adjusted into the flow of regulation and imports 2nd bunch of nozzle 6.On the other hand, after also for example Ar gas carries out the flow adjustment through the flow adjustment part to inert gas, import 2nd bunch of nozzle 6.O3 gas mixes with Ar gas in 2nd bunch of nozzle 6 and is diluted.And,, and its attachment P with the periphery at the back side that is attached to wafer W is collided from bunch C of group of 2nd bunch of nozzle, 6 irradiation O3 gases.At this moment, the CF among O3 gas and the attachment P is that chemical reaction takes place attachment P4 and with the effect based on physical shock, making CF is that attachment P4 is free from wafer W.Reaction product that should be free is discharged to outside the 2nd vacuum chamber 41 via exhaust outlet 45 based on the attraction of cleaning gas and vavuum pump 47.Like this, CF is that attachment P4 is removed from the periphery of wafer W.
Next, shown in Fig. 9 (b), carrying out silicon is removing of attachment P3.At first, switch purge gas and supply with system, utilize that the flow adjustment part will be the corresponding purge gas of attachment with silicon, promptly for example hydrogen fluoride (HF) gas imports to 2nd bunch of nozzle 6 after being adjusted into the flow of regulation.On the other hand, after utilizing the flow adjustment part also for example Ar gas carrying out flow adjustment to inert gas, import to 2nd bunch of nozzle 6.Below, with aforesaid CF be attachment P4 the situation of removing likewise, through with bunch C irradiation attachment P of the group of HF gas, utilizing physics and chemical action to remove silicon is attachment P3.
Specifically; Shown in Fig. 9 (C); With aforesaid CF be that attachment P4 and silicon are removing likewise of attachment P3, through being the corresponding purge gas of attachment, i.e. the cluster gas C of ClF3 gas irradiation attachment P for example with metal, removing metal is attachment P2.
At last, shown in Fig. 9 (d), purge gas that will be corresponding with the organic system attachment, i.e. bunch C of the group of O3 gas irradiation attachment P for example remove organic system attachment P1.Like this, be attached to wafer W rear side periphery attachment P remove end.
In this embodiment; Purge gas as to CF being attachment P4 and organic system attachment P1 has used O3 gas, but also for example gas, the fluorocarbons of alcohol type are that gas (CF is a gas), yellow (SF6) gas of sulfur hexafluoride etc. are so long as can get final product with the gas that organic system attachment generation chemical reaction is removed in addition.And likewise; As the purge gas for example F2 gas beyond the HF gas etc. also that to silicon is attachment P3, as the purge gas also for example HF gas beyond the ClF3 gas, F2 gas, hydrogen chloride (HCl) gas, chlorine (Cl2) gas etc. that to metal are attachment P2.
In the operation that the inclined plane part that utilizes cluster gas C to wafer W cleans; For the temperature of wafer W, can for example carry out under the normal temperature, though temperature is not carried out special qualification; But from the reason of technology controlling and process property, preference is as 0 ℃ to 100 ℃.
Like this, after the cleaning of the periphery of wafer W finished, gate valve G3 was opened, and utilizes the carrying mechanism 22 of this vacuum carrying chamber 2, and wafer W is taken out of from the 2nd vacuum chamber 41.
According to above-mentioned embodiment; During the removing of the attachment P that constitutes in the planarization of the acus schooling up T of the periphery on the surface of carrying out wafer W and by the composite membrane of the periphery at the back side that is attached to wafer W; In vacuum environment, make wafer W rotation, and make the periphery of bunch C irradiation wafer W of group of the purge gas corresponding with each clean.Therefore; Through based on the physical action of the sputter effect of cluster gas C and complementary effect based on the chemical action of reactant gas; As after among the embodiment that states prove, the acus schooling up T of the silicon of can pruning and planarization, and can remove composite membrane, be attachment P.
At this moment, through irradiation position is blown out cleaning gas towards the excircle direction of wafer W, can further suppress flying the adhering to again that produces owing to cleaning to wafer W.In addition; Cluster gas C is owing to can carry out local irradiation; Even therefore only implement the not clean at position (removing the object position); Can the effective coverages such as device zone of wafer W not impacted yet, therefore can be under the state of the pollution that suppresses wafer W the periphery of cleaning wafer W well.Suppose to desire to make plasma to carry out the locality irradiation, then have plasma supply nozzle self damaged, become the possibility of pollution sources, but cluster gas C is not then had such worry, and device construction is easy and cheap.
In above-mentioned embodiment; Since to the 1st and 2nd bunch of nozzle 5,6 made up angle- adjusting mechanism 54,64; Therefore utilize this point, the time period of discharging cluster gas C is divided into a plurality of, for example in the 1st time period of beginning, discharge cluster gas C with the 1st angle; In ensuing the 2nd time period, discharge under the situation such as cluster gas C with the 2nd angle, also can interim handoff angle.Perhaps, can also between the 1st angle and the 2nd angle, change angle continuously, diplomatic corps's bunch nozzle 5,6 repeats the so-called action of shaking the head in matting.
In addition; 1st, 2nd bunch of nozzle 5,6 is owing to can move to directions X; Therefore also can in above-mentioned the 1st time period and the 2nd time period, change the irradiation position that makes progress in the footpath of wafer W; Also change the above-mentioned radial position of group's bunch nozzle 5,6 serially, for example can between the 1st position and the 2nd position, move by diplomatic corps's bunch nozzle 5,6 toward backward shift.In addition, can also angle change that state such group's bunch nozzle 5,6 be carried out with the change of the radial position of wafer W in combination.
In above-mentioned embodiment, though be provided with 2nd a bunch of nozzle 6, carry out the switching of gaseous species, all right that kind shown in figure 10 of the present invention for example is provided with a plurality of the 2nd bunch of nozzle 6a, 6b by each gas.In Figure 10, become complicated in order not make accompanying drawing, omitted 1st bunch of nozzle 5 and cleaning gas nozzle 7 and their support unit 53,73 etc., only show their guiding piece 51,71.
In addition; In above-mentioned embodiment; Though removed the constituent of the attachment P of the periphery that is attached to wafer W fully, about removing of attachment P, as long as become the needed state of next operation; According to circumstances, can whole compositions not removed and only remove one one composition.
In above-mentioned embodiment; Though from same group bunch nozzle shine successively with attachment P each corresponding purge gas of a plurality of constituents, the special-purpose a plurality of groups bunch nozzle of each purge gas also capable of using shines the cluster gas C of various types of gas simultaneously to same position.
In addition; In above-mentioned embodiment; The two has carried out clean to acus schooling up T and attachment P though utilize cluster gas, also can be only to acus schooling up T application of gas group bunch, for example then utilize additive method such as wet-cleaned to carry out other removing for attachment P.
In above-mentioned embodiment; Though used the present invention to the acus schooling up T of the periphery of wafer W and the clean of attachment P; But the present invention is not limited thereto; To the film that is formed on the wafer, for example utilize CVD to handle and only remove wherein also suitable the present invention of situation of the film of wafer peripheral portion.
In above-mentioned embodiment, though in vacuum environment, utilize cluster gas to carry out clean, this clean environment also can be an atmospheric pressure environment so long as the low environment of pressure interior than a bunch nozzle gets final product.
Be not limited to the such circular substrate of wafer W as being processed substrate, go back for example flat-panel monitor (FPD) substrate isogon substrate.Under this situation, can adopt diplomatic corps's bunch nozzle 5,6 peripheries on one side, relatively move to the other end and substrate from its end on one side, Yi Bian the method for handling along substrate.
Embodiment
Here, the experimental example of removing the effect that relates to of the attachment of the planarization of the acus schooling up of having confirmed silicon of the present invention and rear side is described.
(planarization of the acus schooling up of silicon)
Prepared the silicon chip that forms the acus schooling up through plasma and on the surface in advance.Use ClF 3Gas and Ar gas (ClF 3Concentration is 6 volume %.) as handling gas, and the pressure in the cluster gas nozzle is set at 0.8MPa, the environment of vacuum chamber is made as 10Pa, cluster gas is set at 45 ° to the irradiating angle of silicon chip, with the surface element irradiation cluster gas of silicon chip.Figure 11 is after the pre-irradiation of cluster gas and irradiation, utilizes the observed result on the surface of observed this silicon chip of SEM.This result of experiment has been confirmed the irradiation through cluster gas, and the front end of the acus schooling up of silicon is cut and is flattened.
(removing of attachment)
Supposed that metal is that attachment, silicon are attachment and organic system attachment; And each tungsten film, SiO2 film and organic film have been supposed; To having formed the substrate of resist film, can the vertical irradiation cluster gas wait through having or not of visual its irradiation vestige and to confirm and judge and use the present invention.As far as using gases, to tungsten film irradiation sharp with the ClF3 gas of 6 volume % behind the Ar gas dilution, shone the HF gas that utilizes 5 volume % behind the Ar gas dilution and the O3 gas of 5 volume % respectively to SiO2 film and resist film.Wherein, about irradiation, test substrate temperature being heated under 90 ℃ the situation under the situation with room temperature to resist film.About tungsten film and SiO2 film,, therefore confirmed that the present invention capable of using carries out etching owing to can confirm to shine vestige.About resist film,, confirmed at substrate temperature to be that the present invention capable of using carries out etching under 90 ℃ the situation though be not see the irradiation vestige under the situation of room temperature at substrate temperature.

Claims (11)

1. base plate cleaning device is characterized in that possessing:
Maintaining part, it is set in the process chamber with exhaust outlet, is used to keep substrate;
Spray nozzle part for the not position of the periphery of removing the substrate that said maintaining part keeps, and is used for this periphery irradiation cluster gas; With
Travel mechanism, it is used for when the irradiation of said cluster gas, making said maintaining part and said spray nozzle part relatively to move,
Said spray nozzle part through the discharge pressure purge gas higher than the pressure in the said process chamber make the purge gas adiabatic expansion form atom or the molecule of purge gas aggregate, be cluster gas.
2. base plate cleaning device according to claim 1 is characterized in that,
Face side at said substrate possesses the cleaning gas supply part, and the flying that this cleaning gas supply part will disperse from substrate owing to the collision of said cluster gas is blown away from the center of substrate laterally.
3. base plate cleaning device according to claim 1 and 2 is characterized in that,
Said purge gas mixes the back with gas and discharges with boosting.
4. according to each described base plate cleaning device in the claim 1 to 3, it is characterized in that,
Said spray nozzle part is constituted as, and can change the illumination angle of cluster gas to substrate.
5. according to each described base plate cleaning device in the claim 1 to 4, it is characterized in that,
Said spray nozzle part is constituted as, and can move to the central portion that connects substrate and the direction of outside line.
6. according to each described base plate cleaning device in the claim 1 to 5, it is characterized in that,
Said spray nozzle part is constituted as, and can realize at least one side in following, can change the illumination angle of cluster gas through rotating around the axle parallel with substrate that is:; With can move to the direction of central portion that is connected substrate and outside line,
Said spray nozzle part possesses control part; This control part is controlled; So that when the processing of the periphery of substrate being begun based on cluster gas when processing finishes during in, implement cluster gas illumination angle change and on the direction of the central portion that connects substrate and outside line in mobile, at least one side.
7. according to each described base plate cleaning device in the claim 1 to 6, it is characterized in that,
Said substrate is circular,
Said travel mechanism does, the substrate that is used to keep the substrate of said circle and make said circle is around the rotating mechanism of the axle rotation of the central part of said substrate.
8. according to each described base plate cleaning device in the claim 1 to 7, it is characterized in that,
Said substrate is that the multiple stacked film on the Silicon Wafer has been carried out this wafer after the etching; Periphery in the face side of substrate; Be formed with and be equivalent to the not projection crowd of the silicon position, a plurality of needle-likes, and the periphery of side overleaf, be attached with and be equivalent to the not multiple film at position.
9. according to each described base plate cleaning device in the claim 1 to 8, it is characterized in that,
At least one side of said substrate in the surface and the back side periphery, range upon range of have be equivalent to the not multiple film at position,
Said spray nozzle part is supplied with system with the mode that can switch and discharge multiple purge gas with multiple gases and is connected.
10. according to each described base plate cleaning device in the claim 1 to 8, it is characterized in that,
At least one side of said substrate in the surface and the back side periphery, range upon range of have be equivalent to the not multiple film at position,
Be provided with a plurality of said spray nozzle parts, these a plurality of spray nozzle parts are supplied to different purge gas each other.
11. a vacuum flush system is characterized in that possessing:
The vacuum carrying chamber, it is carrying substrate under vacuum environment;
Vacuum process module, it is connected with this vacuum carrying chamber via separator valve, is used for the surface film that is formed at substrate is carried out dry-etching or on substrate, forms film; With
Each described base plate cleaning device in the claim 1 to 10, it is connected with said vacuum carrying chamber via separator valve, is used for cleaning the periphery that has been carried out the substrate after the application of vacuum in said vacuum process module.
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