CN102693898B - Contract closely spaced method - Google Patents
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- CN102693898B CN102693898B CN201110068272.1A CN201110068272A CN102693898B CN 102693898 B CN102693898 B CN 102693898B CN 201110068272 A CN201110068272 A CN 201110068272A CN 102693898 B CN102693898 B CN 102693898B
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Abstract
Embodiments provide a kind of closely spaced method of contracting, comprise: provide a base material, it has the first material of a patterning, wherein the pattern of this first material comprises the identical line of many stripe pitch, and this little line has one first width, this first width is identical with the spacing of adjacent line-to-line; Form one second material on the sidewall of these lines, wherein this second material has one second width, its for this reason the first width 1/3; Remove this first material; Form one the 3rd material on the sidewall of this second material, wherein this 3rd material has one the 3rd width, its for this reason the first width 1/3; Remove this second material; And etch this base material, make this base material have multiple feature, the spacing between these features for this reason adjacent line-to-line spacing 1/3.
Description
Technical field
The present invention relates to semiconductor technology, and relate to one especially and to contract in semiconductor processing closely spaced method.
Background technology
Photoetching process is key procedure very important in whole semiconductor technology.How reducing critical size (criticaldimension), is the challenge that photoetching process is all the time required.Such as, be generally used for the element spacing (pitch) of the integrated circuit of the size measuring T1 Repeated Line Tl and interval, often can be limited to lithographic equipment and technique.When half spacing is less than 65 nanometers, when being particularly less than 45 nanometer, namely photoetching process can become very difficulty.At present, existing many technology can reach the object of micro size, such as, self-aligned double patterning case shaping (selfalignmentdoublepatterning, SADP) waits other techniques to reach the object of size micro so that photoetching process collocation is stacking with etching.
But the shaping dimension reduction that only photoetching process can be formed of self-aligned double patterning case now, to half, is still not enough to the trend overcoming size micro.Therefore, needed for industry is that a kind of component size micro that photoetching process can be formed is to less method.
Summary of the invention
One embodiment of the invention provide a kind of closely spaced method of contracting, comprise: a base material is provided, it has the first material of a patterning, wherein the pattern of this first material comprises the identical line of many stripe pitch, and this little line has one first width, this first width is identical with the spacing of adjacent line-to-line; Form one second material on the sidewall of these lines, wherein this second material has one second width, its for this reason the first width about 1/3; Remove this first material; Form one the 3rd material on the sidewall of this second material, wherein this 3rd material has one the 3rd width, its for this reason the first width about 1/3; Remove this second material; And etch this base material, make this base material have multiple feature, the spacing between these features about for this reason adjacent line-to-line spacing 1/3.
The closely spaced method of contracting of the embodiment of the present invention, the pitch dimension shrinkage that photoetching process can be realized to be formed is to about 1/3 of original spacing, and breaking through traditional handicraft only can by the restriction of spacing micro to 1/2.In addition, comparatively traditional handicraft is low for the resolution of photoetching process, and technique tolerance is also higher.Moreover processing step of the present invention can combine with existing technology and equipment easily, thus without the need to other at substantial cost.
Accompanying drawing explanation
Accompanying drawing described herein is used to provide a further understanding of the present invention, forms a application's part, does not form limitation of the invention.In the accompanying drawings:
Figure 1A to Fig. 1 D shows the profile of the middle process of traditional SADP;
Fig. 2 A to Fig. 2 F is the profile of the closely spaced method of contracting in various middle process of one embodiment of the invention;
Fig. 3 A, Fig. 3 B, Fig. 3 C-1, Fig. 3 C-2 and Fig. 3 D are the profile of the closely spaced method of contracting in various middle process of another embodiment of the present invention;
Fig. 4 A, Fig. 4 B, Fig. 4 C-1, Fig. 4 C-2 and Fig. 4 D show the profile of the closely spaced method of contracting in various middle process of another embodiment.
Drawing reference numeral:
100 ~ base material 100a ~ feature
102 ~ line, 104 ~ sept
200 ~ base material 200a ~ feature
202 ~ the first material 204 ~ the second materials
206 ~ three material the 208 ~ four material
Embodiment
For above and other object of the present invention, feature and advantage can be become apparent, cited below particularly go out preferred embodiment, and coordinate institute's accompanying drawings, be described in detail below.
Next the present invention will provide many different embodiments to implement features different in the present invention.Composition in each specific embodiment and configuration will simplify the present invention following description.These embodiments are not intended to limit the present invention.In addition, the component symbol that may duplicate in the various examples of this specification is so that simplified characterization, but this does not represent there is what specific connection between each embodiment and/or diagram.In addition, one first element be formed at one second element " top ", " on ", " under " or " on " this first element that can comprise in embodiment directly contacts with the second element, or also can comprise between this first element with second element and more have other additional element to make this first element and the second element without directly contacting.
Figure 1A to Fig. 1 D is the profile in various middle process of traditional SADP technique.See Figure 1A, first tradition SADP technique be on base material 100, form with photoetching process the repeat patterns that spacing is P, spacing ratio between the width of its center line 102 and adjacent lines 102 is 1: 3, that is the spacing between the width of line 102 and adjacent lines is 1/4P and 3/4P separately.It is noted that in embodiment disclosed in the present specification, the width that the spacing P formed by photoetching process is defined as line adds the spacing between adjacent two lines, and every bar line all has same widths in fact.Then, see Figure 1B, show that the sidewall of stacking technique online 102 forms sept 104, its divider 104 also has the width of 1/4P.Generally speaking, line 102 can be photoresistance, and sept 104 can be oxide or nitride.Then, see Fig. 1 C, show with this sept 104 for barrier layer, carry out etching technics to remove those lines 102.See Fig. 1 D, be barrier etch base material 100 with this sept 104, and remove those septs 104 subsequently, form the base material 100 of patterning.The base material 100 of this patterning has multiple feature 100a, and those features can be such as linear, and its width is only 1/2 (that is 1/4P) of the width of line 102.Spacing between those adjacent feature 100a is 1/2P (the width 1/4P of feature 100a adds interval 1/4P therebetween).Therefore, above-mentioned traditional SADP technique is used the spacing P formed by photoetching process can be reduced to 1/2P.
One embodiment of the invention disclose one to contract in semiconductor processing closely spaced method, and the spacing P formed by photoetching process can reduce and reduce to 1/3P by it.
Fig. 2 A to Fig. 2 F, Fig. 3 A to Fig. 3 D and Fig. 4 A to Fig. 4 D shows the profile of the closely spaced method of contracting in various middle process of various embodiments of the invention.
See Fig. 2 A, first one base material 200 is provided, it has the first material 202, it is the repeat patterns of P that this first material 202 has the spacing formed by photoetching process, comprise the identical line of many stripe pitch 202, and every bar line 202 has identical width, the width of line 202 is identical with the spacing of adjacent line-to-line.That is the spacing between the width of line 202 and adjacent lines is 1/2P and 1/2P separately.In one embodiment, base material 200 can be the structure comprising semi-conducting material, including but not limited to, bulk silicon, semiconductor crystal wafer, SiGe base material.Or base material 200 more can comprise the dielectric layer formed by non-impurity-doped glass (USG), silicon nitride, silicon oxynitride, carborundum.In one embodiment, this dielectric layer can be used as etching stop layer, with follow-up carry out etching technics time protection base material 200.
Then, see Fig. 2 B, its display is so that the sidewall of stacking technique online 202 to form the second material 204, and wherein the width of the second material 204 is 1/3 (that is 1/6P) of the width of line 202.In one embodiment, stacking technique comprises physical vapor deposition, chemical vapor deposition, evaporation, molecular beam epitaxy, sputtering or thermal oxidation technology.It should be noted that, after each stacking technique, optionally can carry out flatening process (such as cmp) again and remove unnecessary the second material (the second material of the part above in the of such as online 202), be beneficial to the stacking technique of carrying out subsequently.
Then, see Fig. 2 C, its display removes the first material with the etching technics the first material 202 and the second material 204 to Etch selectivity, and the etching selection ratio of such as the first material and the second material can be greater than about 5: 1.In one embodiment, etching technics can be dry etching or wet etching process.As shown in Figure 2 C, after above-mentioned etching technics, the spacing between adjacent second material 204 has 1/6P and 1/2P two kinds of sizes.
Then, see Fig. 2 D, its display forms the 3rd material 206 on the sidewall of the second material 204 with stacking technique, and wherein the width of the 3rd material 206 is also 1/6P.That is after formation the 3rd material 206, the spacing that adjacent second storeroom is of a size of 1/6P filled up by the 3rd material 206, and the pitch dimension shrinkage being of a size of 1/2P is to 1/6P.In addition, as above-mentioned, after carrying out stacking technique, optionally can carry out flatening process (such as cmp) remove the 3rd unnecessary material 206.
Then, see Fig. 2 E, its display removes the second material 204 with the etching technics the second material 204 and the 3rd material 206 to Etch selectivity, such as, can be greater than about 5: 1 to the etching selection ratio of the second material 204 and the 3rd material 206.Therefore, after etching technics, only remain width and be all the 3rd material 206 of 1/6P on substrate 200, and the spacing between the 3rd adjacent material 206 is all 1/6P.
Finally, see Fig. 2 F, its display is barrier etch base material 200 with the 3rd material 206, and in removing the 3rd material 206 with the etching technics the 3rd material 206 and base material 200 to Etch selectivity subsequently, forms the base material 200 of patterning.The base material 200 of this patterning has multiple feature 200a, and those features can be such as linear, and its width is 1/3 (that is 1/6P) of the width of line 202.In addition, the spacing between these adjacent feature 200a is also 1/6P.Therefore, the element spacing P formed by photoetching process can be reduced to about 1/3P (the width 1/6P of feature 200a adds spacing 1/6P therebetween) by the closely spaced method of the contracting provided by the embodiment of the present invention.
In the present embodiment, first material 202, second material 204 and the 3rd material 206 can select the group of autoxidisable substance, nitride, nitrogen oxide organic polymer, metal, carborundum and polysilicon composition, and the second material 204 is different from the first material 202 and the 3rd material 206.Such as, the first material 202 can be photoresistance that organic polymer formed, the second material 204 can be silica, and the 3rd material 206 can be silicon nitride.Or the first material 202 can be silica, the second material 204 can be silicon nitride and the 3rd material 206 can be silica.It is noted that those skilled in the art need when visual technique, without departing from the spirit of the invention change is arbitrarily done to above-mentioned material.
Fig. 3 A to Fig. 3 D shows the face figure of the closely spaced method of contracting in various middle process of another embodiment of the present invention.In this embodiment, unless stated otherwise, the identical label representative material identical with previous embodiment or generation type.After the Main Differences of the present embodiment and previous embodiment is to remove the first material, the sidewall of the 3rd material forms the second material again.See Fig. 3 A, first provide a base material 200, carry out the processing step as Fig. 2 A to Fig. 2 D thereon, thus form the second material 204 and the 3rd material 206 of patterning on substrate 200, there is between the 3rd wherein adjacent material 206 spacing of 1/6P.
Then, carry out Fig. 3 B, its display forms the second material 204 on the sidewall of the 3rd material 206 with stacking technique, again to fill up the space between adjacent 3rd material 206.So, no matter the width of the second material 204 and the 3rd material 206 is all 1/6P, and is alternately arranged with each other.In one embodiment, stacking technique can comprise physical vapor deposition, chemical vapor deposition, evaporation, molecular beam epitaxy, sputtering or thermal oxidation technology.Flatening process can be carried out after stacking technique.
Then, in one embodiment, remove the second material 204 with the etching technics the second material 204 and the 3rd material 206 to Etch selectivity, such as, can be greater than about 5: 1 to the etching selection ratio of the second material 204 and the 3rd material 206.So, as shown in Fig. 3 C-1, only remain the 3rd material 206 on substrate 200, and the spacing between the 3rd adjacent material 206 is all 1/6P.
In another embodiment, as shown in Fig. 3 C-2, remove the 3rd material 206 with the etching technics the second material 204 and the 3rd material 206 to Etch selectivity, such as, can be greater than about 5: 1 to the etching selection ratio of the 3rd material 206 and the second material 204.Therefore, only remain the second material 204 on substrate 200, and the spacing between this adjacent second material 204 is all 1/6P.
Finally, see Fig. 3 D, its display etches base material 200 using remaining material layer as barrier layer, and such as, the 3rd material 206 shown in Fig. 3 C-1 or the second material 204 shown in Fig. 3 C-2 are as barrier layer.Subsequently, remove the 3rd material 206 (or second material 204) with the etching technics the 3rd material 206 (or second material 204) and base material 200 to Etch selectivity, form the base material 200 of patterning.The base material 200 of this patterning has multiple feature 200a, and those feature 200a can be such as linear, and its width is 1/3 (that is 1/6P) of the width of line 202.In addition, the spacing between these adjacent feature 200a is also 1/6P.Therefore, the element spacing P formed by photoetching process can be reduced to about 1/3P (the width 1/6P of feature 200a adds spacing 1/6P therebetween) by the method reducing spacing provided by the present embodiment.
Fig. 4 A to Fig. 4 D is shown as the profile of the closely spaced method of contracting in various middle process of another embodiment of the present invention.In this embodiment, unless stated otherwise, the identical label representative material identical with previous embodiment or generation type.After the Main Differences of the present embodiment and previous embodiment is to remove the first material, the sidewall of the 3rd material forms the 4th material.
See Fig. 4 A, provide a base material 200, carry out the processing step as Fig. 2 A to Fig. 2 D thereon, thus form the second material 204 and the 3rd material 206 of patterning on substrate 200, there is between the 3rd wherein adjacent material 306 spacing of 1/6P.
Then, see Fig. 4 B, its display forms the 4th material 208 on the sidewall of the 3rd material 206, to fill up the space between adjacent 3rd material 206 with stacking technique.Embodiment as the aforementioned, stacking technique can comprise physical vapor deposition, chemical vapor deposition, evaporation, molecular beam epitaxy, sputtering or thermal oxidation technology.Flatening process can be carried out after stacking technique.After forming the 4th material 208, between each second material 204 and the 4th material 208, all accompany the 3rd material 206, and the width of the second material 204, the 3rd material 206 and the 4th material 208 is all 1/6P.
Then, in one embodiment, as shown in Fig. 4 C-1, can to (a) the 3rd material 206 and (b) second material 204 and the 4th material 208 etching technics with Etch selectivity remove the second material 204 and the 4th material 208.In this embodiment, the second material 204 and the 4th material 208 can be identical or similar material, thus can be removed in same etching technics simultaneously.Or the second material and the 4th material also can be different materials, thus can successively be removed by different etching technique.Such as, the second material 204 can be silica, the 3rd material 206 can be silicon nitride, and the 4th material 208 can be silica or polysilicon.After above-mentioned etching technics, only remain the 3rd material 206 on substrate 200, and the space between the 3rd adjacent material is all 1/6P.
In another embodiment, as shown in Fig. 4 C-2, can to (a) the 3rd material 206 and (b) second material 204 and the 4th material 208 etching technics with Etch selectivity remove the 3rd material 206.So, remain the second material 204 and the 4th material 208 on substrate 200, and the spacing between this adjacent second material 204 and the 4th material 208 is 1/6P.
Finally, see Fig. 4 D, its display etches base material 200 using remaining material layer as barrier layer, such as, the 3rd material 206 shown in Fig. 4 C-1 or the second material 204 shown in Fig. 4 C-2 and the 4th material 208.Subsequently, remove the 3rd material 206 (or the second, the 4th material 204,208) with the etching technics the 3rd material 206 (or the second, the 4th material 204,208) and base material 200 to Etch selectivity, form the base material 200 of patterning.The base material 200 of this patterning has multiple feature 200a, and those feature 200a can be such as linear, and its width is 1/3 (that is 1/6P) of the width of line 202.In addition, the spacing between these adjacent feature 200a is also 1/6P.Therefore, the element spacing P formed by photoetching process can be reduced to about 1/3P (the width 1/6P of feature 200a adds spacing 1/6P therebetween) by the closely spaced method of the contracting provided by embodiment.
From the above, embodiments provide the closely spaced method of contracting, even can reach pitch dimension shrinkage that photoetching process formed to about 1/3 of original spacing, breaking through traditional SADP technique only can by the restriction of spacing micro to 1/2.In addition, needed for tradition SADP technique by photoetching process form the spacing between live width and adjacent lines ratio be 1: 3, but the ratio needed for the embodiment of the present invention is 1: 1, thus for photoetching process resolution can more traditional SADP technique low, and technique tolerance is also higher.Moreover processing step of the present invention can combine with existing technology and equipment easily, thus become originally to implement the present invention without the need to other at substantial.
Although the present invention discloses as above with several preferred embodiment; so itself and be not used to limit the present invention; any those skilled in the art; without departing from the spirit and scope of the present invention; when doing arbitrary change and retouching, therefore protection scope of the present invention is when being as the criterion depending on the right person of defining.
Claims (8)
1. contract a closely spaced method, it is characterized in that, comprising:
There is provided a base material, it has the first material of a patterning, the pattern of wherein said first material comprises the identical line of many stripe pitch, and described line has one first width, and described first width is identical with the spacing of adjacent line-to-line;
Form one second material on the sidewall of described line, wherein said second material has one second width, and it is 1/3 of described first width;
Remove described first material;
Form one the 3rd material on the sidewall of described second material, wherein said 3rd material has one the 3rd width, and it is 1/3 of described first width;
Again insert described second material in the gap of adjacent described 3rd material;
Remove described second material; And
Etch described base material, make described base material have multiple feature, the spacing between described adjacent feature is 1/3 of the spacing of described adjacent line-to-line.
2. the closely spaced method of contracting as claimed in claim 1, it is characterized in that, described second material is different from described first material and described 3rd material.
3. the closely spaced method of contracting as claimed in claim 1, it is characterized in that, the group that autoxidisable substance, nitride, organic polymer, metal and carborundum form selected by described first material, described second material and described 3rd material.
4. the closely spaced method of contracting as claimed in claim 1, is characterized in that, be more included in after again inserting described second material, remove described 3rd material, and wherein said second material for removing after the described base material of etching.
5. the closely spaced method of contracting as claimed in claim 1, it is characterized in that, the first material of described patterning is formed by photoetching process.
6. the closely spaced method of contracting as claimed in claim 1, it is characterized in that, described second material and described 3rd material are formed by physical vapor deposition, chemical vapor deposition or thermal oxidation.
7. the closely spaced method of contracting as claimed in claim 1, it is characterized in that, described base material more comprises a dielectric layer.
8. the closely spaced method of contracting as claimed in claim 1, is characterized in that, described in be characterized as linear.
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| CN201110068272.1A CN102693898B (en) | 2011-03-21 | 2011-03-21 | Contract closely spaced method |
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| CN201110068272.1A CN102693898B (en) | 2011-03-21 | 2011-03-21 | Contract closely spaced method |
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| CN102693898B true CN102693898B (en) | 2016-02-24 |
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| CN104051428B (en) * | 2013-03-13 | 2016-12-28 | 中芯国际集成电路制造(上海)有限公司 | The forming method of p-wire |
| CN108352304B (en) * | 2015-09-24 | 2022-03-08 | 东京毅力科创株式会社 | Method of forming etch mask for sub-resolution substrate patterning |
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| CN1909205A (en) * | 2005-08-01 | 2007-02-07 | 奇梦达股份公司 | Method of producing pitch fractionizations in semiconductor technology |
| CN1979802A (en) * | 2005-12-05 | 2007-06-13 | 力晶半导体股份有限公司 | Lead mfg. method and method for shortening distance between lead an pattern |
| CN101490807A (en) * | 2006-07-10 | 2009-07-22 | 美光科技公司 | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
| CN101567305A (en) * | 2008-04-25 | 2009-10-28 | 旺宏电子股份有限公司 | Method for pitch reduction in integrated circuit fabrication |
| CN101859697A (en) * | 2009-04-09 | 2010-10-13 | 旺宏电子股份有限公司 | Patterning method and integrated circuit structure |
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2011
- 2011-03-21 CN CN201110068272.1A patent/CN102693898B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1909205A (en) * | 2005-08-01 | 2007-02-07 | 奇梦达股份公司 | Method of producing pitch fractionizations in semiconductor technology |
| CN1979802A (en) * | 2005-12-05 | 2007-06-13 | 力晶半导体股份有限公司 | Lead mfg. method and method for shortening distance between lead an pattern |
| CN101490807A (en) * | 2006-07-10 | 2009-07-22 | 美光科技公司 | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
| CN101567305A (en) * | 2008-04-25 | 2009-10-28 | 旺宏电子股份有限公司 | Method for pitch reduction in integrated circuit fabrication |
| CN101859697A (en) * | 2009-04-09 | 2010-10-13 | 旺宏电子股份有限公司 | Patterning method and integrated circuit structure |
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