CN102680147B - 基于约瑟夫逊效应的压阻式力敏器件 - Google Patents
基于约瑟夫逊效应的压阻式力敏器件 Download PDFInfo
- Publication number
- CN102680147B CN102680147B CN 201210058424 CN201210058424A CN102680147B CN 102680147 B CN102680147 B CN 102680147B CN 201210058424 CN201210058424 CN 201210058424 CN 201210058424 A CN201210058424 A CN 201210058424A CN 102680147 B CN102680147 B CN 102680147B
- Authority
- CN
- China
- Prior art keywords
- layer
- josephson
- manufactured
- vdr
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005668 Josephson effect Effects 0.000 title claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 40
- 238000001514 detection method Methods 0.000 claims abstract description 21
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 20
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- 239000010949 copper Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052802 copper Inorganic materials 0.000 claims abstract description 11
- 238000001228 spectrum Methods 0.000 claims abstract description 4
- 230000001419 dependent effect Effects 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 24
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 13
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 6
- 239000002023 wood Substances 0.000 claims description 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 abstract description 4
- 229910000464 lead oxide Inorganic materials 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 238000005036 potential barrier Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000002887 superconductor Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000005610 quantum mechanics Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201210058424 CN102680147B (zh) | 2012-03-07 | 2012-03-07 | 基于约瑟夫逊效应的压阻式力敏器件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201210058424 CN102680147B (zh) | 2012-03-07 | 2012-03-07 | 基于约瑟夫逊效应的压阻式力敏器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102680147A CN102680147A (zh) | 2012-09-19 |
CN102680147B true CN102680147B (zh) | 2013-10-30 |
Family
ID=46812415
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 201210058424 Expired - Fee Related CN102680147B (zh) | 2012-03-07 | 2012-03-07 | 基于约瑟夫逊效应的压阻式力敏器件 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102680147B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103592464B (zh) * | 2013-11-06 | 2016-01-20 | 中北大学 | 一种基于约瑟夫逊效应检测的硅压阻式加速度计 |
CN112834091A (zh) * | 2020-12-31 | 2021-05-25 | 苏州大学 | 微装配用微力传感器及压电陶瓷驱动微夹持器 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0695927A2 (en) * | 1994-08-01 | 1996-02-07 | Motorola, Inc. | Sensing transducer using a Schottky junction and having an increased output signal voltage |
CN101286544A (zh) * | 2007-04-10 | 2008-10-15 | 中国科学院物理研究所 | 一种用于超导器件的超导多层膜及其制备方法 |
CN101308051A (zh) * | 2008-07-01 | 2008-11-19 | 西安交通大学 | 三维微力硅微传感器 |
CN201331399Y (zh) * | 2008-11-14 | 2009-10-21 | 浙江大学 | 基于孔缝应力集中的压阻式微悬臂梁传感器 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4814033B2 (ja) * | 2006-09-19 | 2011-11-09 | 日本電信電話株式会社 | 検出素子および検出方法 |
-
2012
- 2012-03-07 CN CN 201210058424 patent/CN102680147B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0695927A2 (en) * | 1994-08-01 | 1996-02-07 | Motorola, Inc. | Sensing transducer using a Schottky junction and having an increased output signal voltage |
CN101286544A (zh) * | 2007-04-10 | 2008-10-15 | 中国科学院物理研究所 | 一种用于超导器件的超导多层膜及其制备方法 |
CN101308051A (zh) * | 2008-07-01 | 2008-11-19 | 西安交通大学 | 三维微力硅微传感器 |
CN201331399Y (zh) * | 2008-11-14 | 2009-10-21 | 浙江大学 | 基于孔缝应力集中的压阻式微悬臂梁传感器 |
Non-Patent Citations (3)
Title |
---|
JP特开2008-76082A 2008.04.03 |
张裕恒.超灵敏电磁探测器——超导隧道效应的应用.《电子应用技术》.1981,(第2期),第29-33页. |
超灵敏电磁探测器——超导隧道效应的应用;张裕恒;《电子应用技术》;19811231(第2期);第29-33页 * |
Also Published As
Publication number | Publication date |
---|---|
CN102680147A (zh) | 2012-09-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Zhang et al. | Highly efficient piezotronic strain sensors with symmetrical Schottky contacts on the monopolar surface of ZnO nanobelts | |
CN101475138B (zh) | 具有检测压阻元件的扭转模态下超薄硅微机械悬臂梁及压阻检测方法 | |
Toriyama et al. | Piezoresistance measurement on single crystal silicon nanowires | |
CN103543292B (zh) | 一种基于电容效应和隧道效应的复合式加速度计 | |
JP2003533894A (ja) | 磁場センサ | |
CN102680147B (zh) | 基于约瑟夫逊效应的压阻式力敏器件 | |
CN107037284A (zh) | 测量以半导体为衬底的石墨烯微区迁移率的方法 | |
Du et al. | Study on the performance of temperature‐stabilised flexible strain sensors based on silver nanowires | |
Boltovets et al. | Ge-film resistance and Si-based diode temperature microsensors for cryogenic applications | |
ITMI20090972A1 (it) | Dispositivo sensore magnetico triassiale integrato. | |
CN106199173A (zh) | 基于悬臂梁级联结构的高精度微波功率检测***及方法 | |
Saito et al. | Rapid and simple measurement of critical current density in HTS thin films using a permanent magnet method | |
CN105047814A (zh) | 一种硅基低磁场巨磁阻磁传感器件及制备与性能测试方法 | |
CN114062978B (zh) | 一种基于压电隧道效应的mems磁场传感器及测量磁场方法 | |
US11415643B2 (en) | Amplification using ambipolar hall effect in graphene | |
CN111312892B (zh) | 一种具有超高三维磁场探测灵敏度的磁传感器及其制作方法 | |
CN103592464B (zh) | 一种基于约瑟夫逊效应检测的硅压阻式加速度计 | |
Aliyev et al. | Strain gauges of GaSbFeGa 1.3 eutectic composites | |
CN203606384U (zh) | 一种基于约瑟夫逊效应检测的硅压阻式加速度计 | |
WO2010140396A1 (ja) | 磁気抵抗素子及び磁気感応スイッチ | |
US6847546B2 (en) | High-sensitivity magnetic field sensor | |
CN109115835A (zh) | 硅锗硅多量子阱红外敏感材料电学参数测试装置及方法 | |
Ngo et al. | MEMS sensor with giant piezoresistive effect using metall-semiconductor hybrid structure | |
Kraya | The reproducibility of transport conditions at metal nanoparticle-semiconductor interfaces over a range of loading conditions | |
CN102507978A (zh) | 基于e指数半导体器件的嵌入式高灵敏度微加速度计 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C53 | Correction of patent of invention or patent application | ||
CB03 | Change of inventor or designer information |
Inventor after: Li Mengwei Inventor after: Wang Li Inventor after: Du Kang Inventor after: Liu Jun Inventor after: Li Xiguang Inventor after: Zhu Jing Inventor before: Li Mengwei Inventor before: Liu Jun Inventor before: Du Kang Inventor before: Wang Li Inventor before: Li Xiguang |
|
COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: LI MENGWEI LIU JUN DU KANG WANG LI LI XIGUANG TO: LI MENGWEI WANG LI DU KANG LIU JUN LI XIGUANG ZHU JING |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131030 |
|
CF01 | Termination of patent right due to non-payment of annual fee |