CN102655120A - Laser processing method for wafer and laser processing device - Google Patents
Laser processing method for wafer and laser processing device Download PDFInfo
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- CN102655120A CN102655120A CN2012100495664A CN201210049566A CN102655120A CN 102655120 A CN102655120 A CN 102655120A CN 2012100495664 A CN2012100495664 A CN 2012100495664A CN 201210049566 A CN201210049566 A CN 201210049566A CN 102655120 A CN102655120 A CN 102655120A
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Abstract
The invention provides a laser processing method for a wafer and a laser processing device, modification layers along spacing channels can be formed in the interior of the wafer without enlargement of spacing channel width, or sticking of a cutting band on the surface of the wafer. Through the laser processing method for a wafer, the modification layers are formed along the spacing channels in the interior of the wafer, the wafer is provided with a plurality of spacing channels in a grid shape on the surface and devices in a plurality of regions divided by the plurality of spacing channels, the laser processing method for a wafer comprises: a wafer supporting process, wherein, the back surface of the wafer is sticked to the cutting band installed in an annular frame; and a modification layer forming process, wherein, laser light with the wavelength with transmission relative to the cutting band and the wafer positions a light-focusing point from the cutting band to the interior of the wafer and illuminates along the spacing channels, so that the modification layers can be formed along the spacing channels in the interior of the wafer.
Description
Technical field
The present invention relates to be used for forming along spacing track the laser processing and the laser processing device of the wafer of metamorphic layer in the inside of wafer; Said wafer is clathrate ground and is formed with many spacing tracks on the surface, and said wafer is formed with microelectromechanical systems devices such as (MEMS) in a plurality of zones that marked off by many spacing tracks.
Background technology
In semiconductor device manufacturing process; Integrated circuit), LSI (Large Scale Integration: large scale integrated circuit), microelectromechanical systems devices such as (MEMS) surface at the semiconductor wafer of circular plate shape roughly marks off a plurality of zones through being the clathrate ground preset lines of cutting apart that arrange, that be known as spacing track, forms IC (Integrated Circuit: in the said zone that marks off.Then, through semiconductor wafer being cut off the zone that is formed with device is cut apart, thereby produced device one by one along spacing track.
The above-mentioned cut-out of wafer being carried out along spacing track utilizes the topping machanism that is known as scribing machine (dicer) to carry out usually.This topping machanism possesses: chuck table, and it is used to keep machined objects such as wafer; Cutting member, it possesses and is used for cutting tool that the machined object that remains on said chuck table is cut; And cutting feeding member; It is used to make chuck table and cutting member relatively to cut feeding; This topping machanism makes the cutting tool rotation on one side and supplies with cutting fluid to the cutting portion that is cut by this cutting tool; On one side make chuck table cut feeding, thus, cut off along the spacing track of wafer.
, because cutting tool has the thickness of about 20 μ m～30 μ m, the width of therefore dividing the spacing track of device need reach about 50 μ m.Therefore, have following problems: the shared area ratio of spacing track raises, and productivity ratio is relatively poor.
On the other hand; As the method for cutting apart wafer along spacing track; Proposition has following method: make wavelength have radioparent pulse laser light with the inside of focal point alignment wafer and along the spacing track irradiation, form metamorphic layer continuously along spacing track as the fracture starting point in the inside of wafer with respect to wafer, along be formed with said as the fracture starting point metamorphic layer and the spacing track that causes intensity to reduce applies external force; Thus, cut apart wafer along spacing track.(for example, with reference to patent documentation 1.)
Patent documentation 1: No. 3408805 communique of Japan Patent
Inside at wafer forms the metamorphic layer as the fracture starting point continuously along spacing track; Along be formed with said as the fracture starting point metamorphic layer and the spacing track that causes intensity to reduce applies external force; Thereby cut apart wafer; As this kind method, implemented following method: the inside and the irradiating laser light that the focal point of laser beam are positioned at the zone corresponding with spacing track from the rear side that does not form spacing track of wafer are to form metamorphic layer, and the back side with wafer is pasted on cutting belt then; Wafer to be formed with metamorphic layer in inside along spacing track applies external force, cuts apart wafer thus., in the time will being pasted on cutting belt, exist the problem that wafer splits along spacing track along spacing track is formed with metamorphic layer in inside wafer.
On the other hand; Can avoid the problems referred to above through implementing following method: stick at the back side of wafer under the state of the cutting belt that is installed on ring-shaped frame; Optically focused forms metamorphic layer in the inside of spacing track from the face side of wafer to make laser beam; But have following problems: the width of the irradiation area of laser beam need reach thickness about 20%～30% of wafer, is in the wafer of 400 μ m at the thickness that is formed with microelectromechanical systems (MEMS) for example, needs the spacing track width about 100 μ m; The restriction of the design aspect of wafer is bigger, and productivity ratio is relatively poor.
In addition; Can eliminate the problems referred to above if adopt following method: stick on the surface of wafer under the state of the cutting belt that is installed on ring-shaped frame; Optically focused forms metamorphic layer in the inside of spacing track from the rear side of wafer to make laser beam; But there is following such problem: for being formed with the wafer by the device of microelectromechanical systems (MEMS) formation such as microphone, acceleration transducer, pressure sensor; If the surface of device is pasted on cutting belt, then sticker can be attached to microelectromechanical systems (MSMS) and damage device.
Summary of the invention
The present invention In view of the foregoing accomplishes; Its major technology problem is to provide a kind of laser processing and laser processing device of wafer, need not to increase the spacing track width, also need not just can form metamorphic layer along spacing track in the inside of wafer in the surface of wafer stickup cutting belt.
In order to solve above-mentioned major technology problem; According to the present invention; A kind of laser processing that is used for forming along spacing track in the inside of wafer the wafer of metamorphic layer is provided; Said wafer is clathrate ground and is formed with many spacing tracks on the surface, and said wafer is formed with device in a plurality of zones that marked off by said many spacing tracks
The laser processing of said wafer is characterised in that,
The laser processing of said wafer comprises:
The wafer supporting operation in said wafer supporting operation, affixes to the cutting belt that is installed in ring-shaped frame with the back side of wafer; With
Metamorphic layer forms operation; Form in the operation at said metamorphic layer; Make wavelength have radioparent laser beam and focal point is positioned the inside of wafer and shines, and form metamorphic layer along spacing track in the inside of wafer along spacing track from the cutting belt side with respect to cutting belt and wafer.
And; According to the present invention; A kind of laser processing device is provided, and said laser processing device is used for forming metamorphic layer with the inside at wafer along spacing track to the internal irradiation laser beam of wafer along spacing track, and said wafer is clathrate ground and is formed with many spacing tracks on the surface; And said wafer is formed with device in a plurality of zones that marked off by said many spacing tracks
Said laser processing device is characterised in that,
Said laser processing device possesses:
Chuck table, said chuck table possesses maintaining part, and said maintaining part is used for the wafer that sticks on the cutting belt that is installed on ring-shaped frame is kept;
The laser light irradiation member, said laser light irradiation member possesses concentrator, and said concentrator is used for illumination wavelength and has radioparent laser beam with respect to wafer that remains on said chuck table and said cutting belt; And
Mobile member, said mobile member are used to make said chuck table and said concentrator to relatively move,
The said maintaining part of said chuck table is formed by transparent component,
The said concentrator of said laser light irradiation member is constituted as: see through said wafer maintaining part and said cutting belt to the wafer illumination laser beam from the downside of the said wafer maintaining part of said chuck table.
In the laser processing of wafer of the present invention; The back side of wafer is affixed to the cutting belt that is installed on ring-shaped frame; And making wavelength have radioparent laser beam with respect to cutting belt and wafer is positioned focal point for the inside of wafer and shines along spacing track from the cutting belt side; Thereby the inside at wafer forms metamorphic layer along spacing track, does not therefore exist pulse laser light to shine the situation of the device on the surface that is formed at wafer.Thus, need not width and be 20～30% spacing track of the thickness of wafer, the situation that does not therefore exist the width of spacing track to be restricted at the design aspect of wafer.And, owing to just the rear side of wafer is sticked on cutting belt, therefore need not after forming metamorphic layer the stickup again of overturning also of surface and the back side from initial, thus will be when wafer be pasted again wafer can avoid in possible trouble along spacing track such problem of splitting.
And laser processing device of the present invention constitutes to be possessed: chuck table, and it possesses and is used for maintaining part that the wafer that sticks on the cutting belt that is installed on ring-shaped frame is kept; The laser light irradiation member, it possesses and is used for illumination wavelength and has the concentrator of radioparent laser beam with respect to the wafer that remains on said chuck table and cutting belt; And mobile member; It is used to make chuck table and said concentrator to relatively move; The maintaining part of chuck table is formed by transparent component; The concentrator of laser light irradiation member constitutes from the downside of the wafer maintaining part of chuck table and sees through wafer maintaining part and cutting belt to the wafer illumination laser beam, so can implement the laser processing of above-mentioned wafer, can obtain above-mentioned action effect.
Description of drawings
Fig. 1 is the stereogram of the laser processing device of formation according to the present invention.
Fig. 2 utilizes the laser processing of wafer of the present invention to carry out the stereogram of the wafer of laser processing.
Fig. 3 illustrates the wafer supporting operation in the laser processing of wafer of embodiment of the present invention and the stereogram that the back side of wafer affixed to the state of the cutting belt that is installed on ring-shaped frame.
Fig. 4 is the key diagram of the wafer supporting operation in the laser processing of wafer of the present invention.
Fig. 5 is the key diagram of the calibration procedure in the laser processing of wafer of the present invention.
The (a) and (b) of Fig. 6 with (c) be the key diagram that metamorphic layer in the laser processing of wafer of the present invention forms operation.
(a) of Fig. 7 and (b) be the key diagram that metamorphic layer in the laser processing of wafer of the present invention forms operation.
Fig. 8 is the stereogram that the wafer of laser processing that is used for the wafer of embodiment of the present invention breaks off the band extension fixture of operation, break off in the operation at wafer, makes to have implemented the wafer that metamorphic layer forms after the operation and break off along the spacing track that has formed metamorphic layer.
(a) of Fig. 9 and (b) by means of Fig. 7 (a) and the wafer implemented of the band extension fixture (b) break off the key diagram of operation.
Figure 10 is by means of Fig. 7 (a) with the key diagram that picks up operation implemented of the band extension fixture (b).
Label declaration
1: laser processing device;
2: stationary base;
3: the 1 movable base;
30: the 1 mobile members;
4: the 2 movable base;
40: the focal point position adjustment means;
5: the 3 movable base;
50: the 2 mobile members;
6: chuck table;
60: support unit;
61: the ring-shaped frame maintaining part;
62: round-shaped wafer maintaining part;
7: the laser light irradiation member;
72: concentrator;
8: the shooting member;
9: the band extension fixture;
91: the framework retaining member;
92: the band expansion;
93: pick up chuck;
10: wafer;
11: ring-shaped frame;
12: cutting belt.
Embodiment
Below, with reference to accompanying drawing to the laser processing of wafer of the present invention and preferred embodiment at length describing of laser processing device.
The stereogram of the laser processing device that constitutes according to the present invention has been shown in Fig. 1.
Laser processing device 1 shown in Figure 1 possesses stationary base the 2, the 1st movable base the 3, the 2nd movable base 4 and the 3rd movable base 5.Side in the side nearby of this stationary base 2 is provided with pair of guide rails 21,21, and this pair of guide rails 21,21 is extended along the direction (Y direction) shown in the arrow Y abreast.
The 1st movable base 3 is being installed on above-mentioned stationary base 2 along the mode that above-mentioned pair of guide rails 21,21 is slided.Promptly; As shown in Figure 1; Be provided with a pair of groove 31,31 that is directed in the 1st movable base 3 with stationary base 2 opposed surfaces; This is a pair of to be directed groove 31,31 and to be located at the pair of guide rails 21,21 of stationary base 2 chimeric, through should a pair ofly being directed groove 31,31 and above-mentioned pair of guide rails 21,21 is chimeric, the 1st movable base 3 is assembled into and can slides on Y direction along pair of guide rails 21,21 in stationary base 2.And, be provided with the pair of guide rails 32,32 of extending abreast along the direction (Z-direction) shown in the arrow Z on another surface of the 1st movable base 3.Laser processing device in the illustrated execution mode possesses the 1st mobile member 30, the 1 mobile members 30 and is used to make the 1st movable base 3 to move on Y direction along the pair of guide rails of being located at above-mentioned stationary base 2 21,21.The 1st mobile member 30 comprises: external thread rod 301, and it is equipped on pair of guide rails 21, between 21 and parallel with this pair of guide rails 21,21; With impulse motor 302, it is used to drive said external thread rod 301 rotations.External thread rod 301 screws togather with the internal thread 33 of being located at above-mentioned the 1st movable base 3, and an end of this external thread rod 301 is supported to and can be rotated by the parts of bearings that is equipped on stationary base 2 303.The driving shaft of impulse motor 302 is connected with the other end of external thread rod 301.Therefore, drive external thread rod 301 forward or reverse, thereby the 1st movable base 3 is moved on Y direction along the pair of guide rails of being located at stationary base 2 21,21 through driving pulse motor 302 forward or reverse.
The 2nd movable base 4 is being installed on the 1st above-mentioned movable base 3 along the mode that above-mentioned pair of guide rails 32,32 is slided.Promptly; Be provided with a pair of groove 41,41 that is directed in the 2nd movable base 4 with the 1st movable base 3 opposed sides; This a pair of groove 41,41 that is directed is chimeric with the pair of guide rails 32,32 of being located at the 1st movable base 3 with the mode that can slide; Through should a pair ofly being directed groove 41,41 and above-mentioned pair of guide rails 32,32 is chimeric, thereby the 2nd movable base 4 is mounted to go up in the direction (Z-direction) shown in the arrow Z along pair of guide rails 32,32 in the 1st movable base 3 slides.And the 2nd movable base 4 possesses pair of guide rails 42,42, and this pair of guide rails 42,42 is located at the side with an above-mentioned lateral vertical, and this pair of guide rails 42,42 is extended along the direction (X-direction) shown in the arrow X abreast.Laser processing device in the illustrated execution mode possesses focal point position adjustment means 40, and this focal point position adjustment means 40 is used to make the 2nd movable base 4 to move on Z-direction along the pair of guide rails of being located at the 1st above-mentioned movable base 3 32,32.Focal point position adjustment means 40 comprises: external thread rod 401, and it is equipped on pair of guide rails 32, between 32 and parallel with this pair of guide rails 32,32; With impulse motor 402, it is used to drive said external thread rod 401 rotations.External thread rod 401 screws togather with the internal thread 43 of being located at the 2nd above-mentioned movable base 4, and an end of this external thread rod 401 is supported to and can be rotated by the parts of bearings that is equipped on the 1st movable base 3 403.The driving shaft of impulse motor 402 is connected with the other end of external thread rod 401.Therefore, drive external thread rod 401 forward or reverse, thereby the 2nd movable base 4 is moved on Z-direction along the pair of guide rails of being located at the 1st movable base 3 32,32 through driving pulse motor 402 forward or reverse.
The 3rd movable base 5 is being installed on the 2nd above-mentioned movable base 4 along the mode that above-mentioned pair of guide rails 42,42 is slided.Promptly; Be provided with a pair of groove 51,51 (in Fig. 1, only show upside) that is directed in the 3rd movable base 5 with the 2nd movable base 4 opposed sides; This a pair of groove 51,51 that is directed is chimeric with the pair of guide rails 42,42 of being located at the 2nd above-mentioned movable base 4 with the mode that can slide; Through should a pair ofly being directed groove 51,51 and above-mentioned pair of guide rails 42,42 is chimeric, the 3rd movable base 5 being mounted to go up in the direction (X-direction) shown in the arrow X along pair of guide rails 42,42 in the 2nd movable base 4 sliding.Laser processing device 1 in the illustrated execution mode possesses the 2nd mobile member 50, the 2 mobile members 50 and is used to make the 3rd movable base 5 to move on X-direction along the pair of guide rails of being located at the 2nd above-mentioned movable base 4 42,42.The 2nd mobile member 50 comprises: external thread rod 501, and it is equipped on pair of guide rails 42, between 42 and parallel with this pair of guide rails 42,42; With impulse motor 502, it is used to drive this external thread rod 501 rotations.External thread rod 501 screws togather with the internal thread (not shown) of being located at above-mentioned the 3rd movable base 5, and an end of this external thread rod 501 is supported to and can be rotated by the parts of bearings that is equipped on the 2nd movable base 4 503.The driving shaft of impulse motor 502 is connected with the other end of external thread rod 501.Therefore, drive external thread rod 501 forward or reverse, thereby the 3rd movable base 5 is moved on X-direction along the pair of guide rails of being located at the 2nd movable base 4 42,42 through driving pulse motor 502 forward or reverse.
Another surface in the 3rd above-mentioned movable base 5 is equipped with chuck table 6 via support unit 60, and this chuck table 6 is used for the wafer on the cutting belt of stating after sticking on that is installed on ring-shaped frame is kept.Chuck table 6 is made up of following part: ring-shaped frame maintaining part 61, the ring-shaped frame that it is stated after being used to keep; With round-shaped wafer maintaining part 62, it keeps wafer via cutting belt, the cutting belt of stating after said wafer sticks on that is installed on ring-shaped frame.Framework maintaining part 61 forms hollow form by metalwork, and is that framework keeps face 611 to offer a plurality of SSs 612 at upper surface.For the framework maintaining part 61 of such formation, a plurality of SSs 612 are communicated with not shown aspiration means via hollow bulb.And, the framework of framework maintaining part 61 keep face 611 to erect being provided with being used for to after two alignment pin 613a, the 613b of the ring-shaped frame location stated.Above-mentioned wafer maintaining part 62 is formed by transparent components such as glass plates, and its outer peripheral face is installed in the internal perisporium of ring-shaped frame maintaining part 61 through suitable sticker.The wafer maintaining part 62 that so constitutes is that the wafer of the cutting belt that is installed on ring-shaped frame stated after wafer keeps 621 pairs in face to stick on keeps at upper surface.
Laser processing device 1 shown in Figure 1 possesses laser light irradiation member 7, and this laser light irradiation member 7 is used for remaining in the wafer illumination laser beam as machined object of chuck table 6.Laser light irradiation member 7 possesses: housing 71; Be equipped on the laser beam vibration members (not shown) such as YAG laser oscillator or YVO4 laser oscillator in the said housing 71; And concentrator 72, the upper surface that it is equipped on an end of housing 71 is used for the pulse laser light optically focused and the quadrature that makes progress sent by the vibration of laser beam vibration member are penetrated.
Be equipped with shooting member 8 at the upside of laser light irradiation member 7, this shooting member 8 is used to detect the machining area that should carry out laser processing through laser light irradiation member 7.This shooting member 8 comprises illuminating member, optical system and imaging apparatus parts such as (CCD); And this shooting member 8 is sent to not shown control member with the picture signal that photographs; Said illuminating member is used for machined object is thrown light on; Said optical system is used to catch the zone by this illuminating member illumination, and said imaging apparatus is used for the picture that is captured by this optical system is made a video recording.In the illustrated embodiment, this shooting member 8 separate predetermined compartment of terrain be configured in concentrator 72 directly over.In addition, shooting member 8 is installed on the carriage 80 of L word shape, and the carriage 80 of said L word shape is installed on the housing 71 of laser light irradiation member 7, and above-mentioned chuck table 6 constitutes and can between concentrator 72 and shooting member 8, move.
Laser processing device 1 in the illustrated execution mode constitutes as described above, describes in the face of its effect down.
The stereogram of the wafer of the laser processing processing that utilizes wafer of the present invention has been shown in Fig. 2.Wafer 10 shown in Figure 2 is made up of for the for example silicon wafer of 400 μ m thickness; This wafer 10 marks off a plurality of zones at surperficial 10a by many spacing tracks 101 that form with being clathrate, and is formed with the microelectromechanical systems (MEMS) as device 102 in the said zone that marks off.
In the laser processing of wafer of the present invention, at first, as illustrated in fig. 3 the back side 10b of wafer 10 is affixed to the surface (wafer supporting operation) of the cutting belt 12 that is installed on ring-shaped frame 11.In addition, the wafer supporting operation also can be when cutting belt 12 is installed to ring-shaped frame 11, simultaneously the back side 10b of wafer 10 to be affixed to the surface of cutting belt 12.Peripheral end face at above-mentioned ring-shaped frame 11 is provided with two engaging recessed part 111a, 111b; Said two engaging recessed part 111a, 111b are used for engaging with two alignment pin 613a, 613b, and the framework that said two alignment pin 613a, 613b erect the framework maintaining part 61 of the chuck table 6 that is arranged at above-mentioned formation laser processing device keeps face 611.And, cutting belt 12 adopt supply by the laser beam transmission of laser light irradiation member 7 irradiations of above-mentioned laser processing device 1, for example polyvinyl chloride (PVC) or polyolefin (PO) sheet material.
With reference to Fig. 4 to Fig. 6 metamorphic layer being formed operation describes; Form in the operation at said metamorphic layer; Use above-mentioned laser processing device 1 to form metamorphic layer in the inside of wafer 10 along spacing track 101, said wafer 10 sticks on the surface of the cutting belt 12 that is installed on ring-shaped frame 11 as illustrated in fig. 3.Form operation in order to implement metamorphic layer, at first as shown in Figure 4, will put in 10 years on the chuck table 6 of laser processing device 1 via the wafer that cutting belt 12 is supported on ring-shaped frame 11.At this moment; Put wafer on the wafer maintaining part 62 in 10 years via cutting belt 12; And ring-shaped frame was put on the ring-shaped frame maintaining part 61 that constitutes chuck table 6 in 11 years, and two the engaging recessed part 111a, the 111b that are arranged at ring-shaped frame 11 are engaged with two alignment pin 613a, the 613b that setting is arranged at the upper surface 611 of framework maintaining part 61.Consequently, the wafer 10 that is supported on ring-shaped frame 11 via cutting belt 12 is positioned in the preposition of chuck table 6.Then, make not shown aspiration means action, thereby ring-shaped frame 11 and wafer 10 are remained on (wafer maintenance operation) on the chuck table 6 across cutting belt 12 suctions.Thus, the surperficial 10a that remains on the wafer 10 on the chuck table 6 is in upside.
After having implemented above-mentioned wafer and having kept operation, through making 30 actions of the 1st mobile member, the chuck table 6 that as illustrated in fig. 5 suction is maintained wafer 10 navigate to shooting member 8 under.When chuck table 6 be positioned to shooting member 8 under after, carry out calibration procedure, in this calibration procedure, utilize shooting member 8 and not shown control member to detect the machining area that should carry out laser processing along the spacing track 101 of wafer 10.Promptly; Shooting member 8 is carried out image processing such as pattern match with not shown control member; Thereby accomplish the calibration of laser light irradiation position, image processing such as said pattern match are used for carrying out the spacing track 101 that forms along the predetermined direction of wafer 10 and along the position alignment between the concentrator 72 of the laser light irradiation member 7 of said spacing track 101 irradiating laser light.And, for the direction of many spacing tracks 101 quadratures that are formed at wafer 10 on many spacing tracks 101 that form, accomplish the calibration of laser light irradiation position equally.
As stated; Detecting the spacing track 101 that is formed at the wafer 10 that remains on the chuck table 6; After having carried out the calibration of laser light irradiation position; Shown in Fig. 6 (a), chuck table 6 moved to the laser light irradiation zone at concentrator 72 place of laser light irradiation member 7, and the end (in (a) of Fig. 6, being left end) of predetermined spacing track 101 is positioned laser light irradiation member 7 concentrator 72 directly over.Then, the focal point P of pulse laser light is aimed at surperficial 10a (upper surface) with wafer 10 at a distance of the for example lower position of about 30 μ m.Next, from concentrator 72 illumination wavelength with respect to silicon wafer have radioparent pulse laser light on one side, the direction shown in the arrow X1 of chuck table 6 in Fig. 6 (a) is moved with predetermined feed speed.At this moment, the pulse laser light from concentrator 72 irradiations shines from the back side 10b side of wafer 10 through the wafer maintaining part 62 that is formed by transparent components such as glass plates with by the cutting belt 12 of polyvinyl chloride (PVC) or polyolefin (PO) sheet material formation.Then, shown in Fig. 6 (b), when the other end (being right-hand member in (b) at Fig. 6) of spacing track 101 arrives the irradiation position of concentrator 72 of laser light irradiation member 7, the irradiation of stop pulse laser beam, and stop to move of chuck table 6.Consequently, in the inside of wafer 10, near the surperficial 10a of wafer 10 (upper surface), form metamorphic layer 110 along spacing track 101.This metamorphic layer 110 is as fusion cured layer formation again.
Above-mentioned metamorphic layer forms the processing conditions of operation and for example as following, sets.
Light source: LD excitation Q switching Nd:YV04 laser
Wavelength: 1064nm
Average output: 1.2W
Repetition rate: 80kHz
Pulse duration: 120ns
Optically focused spot diameter: Φ 2 μ m
Feed speed: 100mm/ second
In addition, under above-mentioned processing conditions, the thickness through the formed metamorphic layer 110 of the irradiation of a laser beam is 50 μ m～60 μ m.Therefore, be that the wafer 10 of 400 μ m is cut apart easily in order to make thickness, needing to form about five layer thicknesses be the metamorphic layer of 50 μ m～60 μ m.Therefore; Form operation through making to move successively and implement above-mentioned metamorphic layer downwards from the focal point P of the pulse laser light of the concentrator of laser light irradiation member 7 72 irradiations, thus as Fig. 6 (c) shown in the inside of wafer 10 along five layers of metamorphic layer 110 of spacing track 101 formation.In addition; Since on the turn layer form in the operation be see through the wafer maintaining part 62 that forms by transparent components such as glass plates and by the cutting belt 12 of polyvinyl chloride (PVC) or polyolefin (PO) sheet material formation from the back side 10b side irradiated with pulse laser light of wafer 10, so pulse laser light can not shine device 102.Thus, need not width and be 20～30% spacing track of the thickness of wafer 10, the situation that therefore aspect chip design, does not exist the width of spacing track to be restricted.And; Owing to just the rear side of wafer 10 is sticked on cutting belt 12 from initial; Therefore, need not after forming metamorphic layer surface and back side upset and stickup again with wafer 10, thus will be when the pasting again of wafer wafer avoid in possible trouble along spacing track such problem of breaking.
Like this, implementing along all spacing tracks 101 that extend in a predetermined direction of wafer 10 after above-mentioned metamorphic layer forms operation, the spacing track 101 on the direction that is formed at the predetermined direction quadrature is implemented above-mentioned metamorphic layer and is formed operation.That is, shown in Fig. 7 (a), the end (in (a) of Fig. 7, being right-hand member) of the spacing track 101 on the direction that is formed at above-mentioned predetermined direction quadrature is positioned laser light irradiation member 7 concentrator 72 directly over.Then, the focal point P of pulse laser light is aimed at surperficial 10a (upper surface) with wafer 10 at a distance of the for example lower position of about 30 μ m.Next, from concentrator 72 illumination wavelength with respect to silicon wafer have radioparent pulse laser light on one side, chuck table 6 is moved with predetermined feed speed along the direction shown in Fig. 7 (a) middle arrow Y1.At this moment, the pulse laser light from concentrator 72 irradiations shines from the back side 10b side of wafer 10 through the wafer maintaining part 62 that is formed by transparent components such as glass plates with by the cutting belt 12 that polyvinyl chloride (PVC) or polyolefin (PO) sheet material constitute.Like this, each spacing track 101 on the direction that is formed at the predetermined direction quadrature is implemented above-mentioned metamorphic layer and is formed operation.
After having implemented above-mentioned metamorphic layer formation operation, implement to break off operation, break off in operation at this, wafer 10 is applied external force, wafer 10 is broken off along the spacing track that is formed with metamorphic layer 110 101.This disconnection operation utilizes band extension fixture 9 shown in Figure 8 to implement.Band extension fixture 9 shown in Figure 8 possesses: framework retaining member 91, and it is used to keep above-mentioned ring-shaped frame 11; Band expansion 92, it is used to expand cutting belt 12, and said cutting belt 12 is installed in the ring-shaped frame 11 that remains in said framework retaining member 91; And pick up chuck 93.Framework retaining member 91 is made up of ring-shaped frame holding member 911 and a plurality of clamping elements 912 as fixed component that are equipped on the periphery of said framework holding member 911.The upper surface of framework holding member 911 forms to be used for carrying and puts carrying of ring-shaped frame 11 and put face 911a, puts face 911a in this year and uploads and put ring-shaped frame 11.And, carry to place and carry the ring-shaped frame of putting on the face 911a 11 and be fixed on framework holding member 911 by clamping element 912.The framework retaining member 91 that constitutes like this is supported to and can be advanced and retreat along the vertical direction by band expansion 92.
Band expansion 92 possesses expansion cylinder 921, and this expansion cylinder 921 is equipped on the inboard of above-mentioned ring-shaped frame holding member 911.The internal diameter of this expansion cylinder 921 and external diameter are littler and bigger than the external diameter of the wafer 10 that sticks on the cutting belt 12 that is installed on this ring-shaped frame 11 than the internal diameter of ring-shaped frame 11.And expansion cylinder 921 possesses support lug 922 in the lower end.Band expansion 92 in the illustrated execution mode possesses supporting member 923, and this supporting member 923 makes above-mentioned ring-shaped frame holding member 911 to advance and retreat along the vertical direction.This supporting member 923 is made up of a plurality of cylinder 923a that are configured on the above-mentioned support lug 922, and the piston rod 923b of said a plurality of cylinder 923a is connected with the lower surface of above-mentioned ring-shaped frame holding member 911.The supporting member 923 that so is made up of a plurality of cylinder 923a moves ring-shaped frame holding member 911 along the vertical direction between reference position and expanded position; Shown in Fig. 9 (a); In said reference position, carry and to put face 911a and be positioned at the roughly the same height in upper end with expansion cylinder 921, shown in Fig. 9 (b); In said expanded position, carry and to put face 911a and be positioned at the height that leans on the below scheduled volume than the upper end of expansion cylinder 921.
The disconnection operation of the wafer of band extension fixture 9 enforcements of formation describes to utilizing as described above with reference to Fig. 9.Promptly; Shown in Fig. 9 (a); Place the carrying of framework holding member 911 that constitutes framework retaining member 91 to put on the face 911a in 11 years the ring-shaped frame that the cutting belt 12 of pasting wafer 10 is installed, and utilize clamping element 912 that said ring-shaped frame 11 is fixed in framework holding member 911 (framework maintenance operation).At this moment, framework holding member 911 is located in the reference position shown in (a) of Fig. 9.
Shown in Fig. 9 (b), after having implemented above-mentioned framework maintenance operation, make a plurality of cylinder 923a actions as the supporting member 923 that constitutes band expansion 92, make ring-shaped frame holding member 911 drop to expanded position.Thus, be fixed on the ring-shaped frame 11 that carrying of framework holding member 911 put on the face 911a and also descend, therefore, shown in Fig. 9 (b), make the cutting belt 12 that is installed on ring-shaped frame 11 contact and expand (cutting belt expansion process) with the last ora terminalis of expanding cylinder 921.Consequently, the wafer 10 that sticks on cutting belt 12 is acts on tensile force radially.Like this, when tensile force is when acting on to wafer 10 radially, make the intensity of the metamorphic layer 110 that forms along spacing track 101 reduce; Therefore; The metamorphic layer 110 that intensity has reduced becomes the fracture starting point, and wafer 10 breaks off along spacing track 101, thereby is divided into device 102 one by one.
Shown in figure 10; Make wafer 10 after the spacing track that is formed with metamorphic layer 110 101 disconnections are divided into device 102 one by one through implementing above-mentioned wafer disconnection operation; Make and pick up chuck 93 action and come suction device 102, thereby (picking up operation) peeled off and picked up to said device 102 from cutting belt 12.Therefore in addition, in picking up operation,, can easily pick up and can not contact with adjacent device 102 because the gap S between the device 102 one by one enlarged.
More than, describe the present invention based on illustrated execution mode, but the present invention not merely is defined in execution mode, can also in the scope of purport of the present invention, carry out various distortion.For example; The wafer that will be formed with the device that is made up of microelectromechanical systems (MEMS) has been shown in above-mentioned execution mode has been divided into the example of device one by one; But, the present invention also can be applied to the optical device wafer that is formed with the semiconductor wafer of devices such as IC, LSI or is formed with optical devices such as light-emitting diode, CCD.
Claims (2)
1. the laser processing of a wafer; The laser processing of this wafer is the method that forms metamorphic layer in the inside of wafer along spacing track; Said wafer is clathrate ground and is formed with many spacing tracks on the surface; And said wafer is formed with device in a plurality of zones that marked off by said many spacing tracks
The laser processing of said wafer is characterised in that,
The laser processing of said wafer comprises:
The wafer supporting operation in said wafer supporting operation, affixes to the cutting belt that is installed on ring-shaped frame with the back side of wafer; With
Metamorphic layer forms operation; Form in the operation at said metamorphic layer; Make wavelength have radioparent laser beam and focal point is positioned the inside of wafer and shines, and form metamorphic layer along spacing track in the inside of wafer along spacing track from the cutting belt side with respect to cutting belt and wafer.
2. laser processing device; Said laser processing device is used for forming metamorphic layer with the inside at wafer along spacing track to the internal irradiation laser beam of wafer along spacing track; Said wafer is clathrate ground and is formed with many spacing tracks on the surface; And said wafer is formed with device in a plurality of zones that marked off by said many spacing tracks
Said laser processing device is characterised in that,
Said laser processing device possesses: chuck table, and said chuck table possesses the wafer maintaining part, and said wafer maintaining part is used for the wafer that sticks on the cutting belt that is installed on ring-shaped frame is kept; The laser light irradiation member, said laser light irradiation member possesses concentrator, and said concentrator is used for illumination wavelength and has radioparent laser beam with respect to wafer that remains on said chuck table and said cutting belt; And mobile member, said mobile member is used to make said chuck table and said concentrator to relatively move,
The said wafer maintaining part of said chuck table is formed by transparent component,
The said concentrator of said laser light irradiation member is constituted as: see through said wafer maintaining part and said cutting belt to the wafer illumination laser beam from the downside of the said wafer maintaining part of said chuck table.
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| JP2011-047825 | 2011-03-04 | ||
| JP2011047825A JP5860217B2 (en) | 2011-03-04 | 2011-03-04 | Laser processing equipment |
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| CN103400779A (en) * | 2013-07-09 | 2013-11-20 | 程君 | Manufacturing method of semiconductor display panel |
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| CN106463372A (en) * | 2014-05-14 | 2017-02-22 | Eo科技股份有限公司 | Laser processing method for cutting semiconductor wafer having metal layer formed thereon and laser processing device |
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| JP2014165338A (en) * | 2013-02-25 | 2014-09-08 | Disco Abrasive Syst Ltd | Laser processing method |
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Also Published As
| Publication number | Publication date |
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| JP5860217B2 (en) | 2016-02-16 |
| CN102655120B (en) | 2016-02-24 |
| JP2012186287A (en) | 2012-09-27 |
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