CN102652339A - Electrode paste composition for rear surface of solar cell - Google Patents
Electrode paste composition for rear surface of solar cell Download PDFInfo
- Publication number
- CN102652339A CN102652339A CN2010800533415A CN201080053341A CN102652339A CN 102652339 A CN102652339 A CN 102652339A CN 2010800533415 A CN2010800533415 A CN 2010800533415A CN 201080053341 A CN201080053341 A CN 201080053341A CN 102652339 A CN102652339 A CN 102652339A
- Authority
- CN
- China
- Prior art keywords
- solar cell
- constituent
- silver
- frit
- rear surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title abstract description 6
- 239000002003 electrode paste Substances 0.000 title abstract 2
- 239000002245 particle Substances 0.000 claims abstract description 7
- 239000000843 powder Substances 0.000 claims abstract description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 38
- 239000000470 constituent Substances 0.000 claims description 36
- 239000002002 slurry Substances 0.000 claims description 36
- 229910052709 silver Inorganic materials 0.000 claims description 26
- 239000004332 silver Substances 0.000 claims description 26
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 239000002952 polymeric resin Substances 0.000 claims 1
- 229920003002 synthetic resin Polymers 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract description 6
- 210000004027 cell Anatomy 0.000 description 40
- 238000005245 sintering Methods 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000004094 surface-active agent Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000007639 printing Methods 0.000 description 7
- -1 Ester ethers Chemical class 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 229920002521 macromolecule Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 150000002148 esters Chemical class 0.000 description 4
- 239000000080 wetting agent Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- ULQISTXYYBZJSJ-UHFFFAOYSA-N 12-hydroxyoctadecanoic acid Chemical compound CCCCCCC(O)CCCCCCCCCCC(O)=O ULQISTXYYBZJSJ-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229920002125 Sokalan® Polymers 0.000 description 2
- 229920002472 Starch Polymers 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical class OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 125000005456 glyceride group Chemical group 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 2
- 239000004584 polyacrylic acid Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 2
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 2
- 235000019698 starch Nutrition 0.000 description 2
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- BPIUIOXAFBGMNB-UHFFFAOYSA-N 1-hexoxyhexane Chemical compound CCCCCCOCCCCCC BPIUIOXAFBGMNB-UHFFFAOYSA-N 0.000 description 1
- 229940114072 12-hydroxystearic acid Drugs 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- GZMAAYIALGURDQ-UHFFFAOYSA-N 2-(2-hexoxyethoxy)ethanol Chemical compound CCCCCCOCCOCCO GZMAAYIALGURDQ-UHFFFAOYSA-N 0.000 description 1
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 description 1
- JDSQBDGCMUXRBM-UHFFFAOYSA-N 2-[2-(2-butoxypropoxy)propoxy]propan-1-ol Chemical compound CCCCOC(C)COC(C)COC(C)CO JDSQBDGCMUXRBM-UHFFFAOYSA-N 0.000 description 1
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 description 1
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 description 1
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RVGRUAULSDPKGF-UHFFFAOYSA-N Poloxamer Chemical compound C1CO1.CC1CO1 RVGRUAULSDPKGF-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 235000009754 Vitis X bourquina Nutrition 0.000 description 1
- 235000012333 Vitis X labruscana Nutrition 0.000 description 1
- 240000006365 Vitis vinifera Species 0.000 description 1
- 235000014787 Vitis vinifera Nutrition 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 125000002877 alkyl aryl group Chemical group 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- QHIWVLPBUQWDMQ-UHFFFAOYSA-N butyl prop-2-enoate;methyl 2-methylprop-2-enoate;prop-2-enoic acid Chemical compound OC(=O)C=C.COC(=O)C(C)=C.CCCCOC(=O)C=C QHIWVLPBUQWDMQ-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011267 electrode slurry Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229930182470 glycoside Natural products 0.000 description 1
- 150000002338 glycosides Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229940051841 polyoxyethylene ether Drugs 0.000 description 1
- 229920000056 polyoxyethylene ether Polymers 0.000 description 1
- 229920001289 polyvinyl ether Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- ULWHHBHJGPPBCO-UHFFFAOYSA-N propane-1,1-diol Chemical class CCC(O)O ULWHHBHJGPPBCO-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000600 sorbitol Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The present invention relates to an electrode paste composition for the rear surfaces of solar cells, and comprises (a) a conductive powder of spherical or planar particles with an average particle size (D50) of 0.3 to 1.5 [mu]m; (b) Bi2O3-SiO2-Al2O3-B2O3-Sr O glass frit; and (c) an organic vehicle.
Description
Technical field
The present invention starches constituent about a kind of rear surface of solar cell electrode with silver.
The rights and interests of the korean patent application No.10-2009-0125885 of the application's request application on December 17th, 2009 and the korean patent application No.10-2010-0128828 of application on December 16th, 2010, its full content is incorporated among the application by quoting.
Background technology
Generally speaking solar cells made of crystalline silicon is by the following manner manufacturing.
At first, be formed on the one side of p type silicon substrate by the made n type impurity layer of for example phosphorus.This p type silicon substrate is preferably the thickness with 180-220 μ m.In addition, this n type impurity layer is preferably the thickness with 0.2-0.6 μ m.
Then, in order to reduce the reflection loss of sunlight, on this n type impurity layer, form anti-reflective film.SiN
xLayer can be used as anti-reflective film and uses.
Then, on anti-reflective film, form before electrode.In addition,, p type silicon substrate do not form backplate on forming the opposite side of n type impurity layer.Electrode can be coated with conductive paste by the mode with screen painting, the slurry after will being coated with is dry, then dried slurry is sent into the two-stage sintering process of low temperature (about 600 ℃) and high temperature (800～950 ℃).Usually in this sintering process,, the conductivity slurry forms conductive metal particle-Si alloy-layer when diffusing into p type silicon substrate.By so back surface field (BSF, Back Surface Field) layer that diffuseed to form, the electronics that it has prevented to be generated in the solar cell compound, and promote the collection efficiency of the carrier (carrier) that produces.The thickness of BSF layer and uniformity have determined the efficient of solar cell.When the thickness minimizing of BSF layer, the efficient of solar cell reduces, and when its thickness increase, its efficient increases.
At present, the rear surface of solar cell electrode has been studied development.General embodiment comprises patent literature.
Disclosed korean unexamined patent application No.10-2006-0108550, it is about thick-film conductor property constituent, and it comprises metallic, glass particle and the organic carrier with 3-15 μ m size.The constituent that is disclosed in this patent application has a shortcoming, and is big in the change of the hole between metallic behind the resistance that increases solar cell with sintering promptly because the size of metallic is big, causes solar battery efficiency to reduce.
Simultaneously, disclosed korean unexamined patent application No.10-2006-0108552, it is about the electroconductive thick film constituent, and it comprises conductive metal particle, lead-less glasses material (glass frit), reaches organic carrier.Yet the constituent in this disclosed patent application is owing to this frit has the problem on the thermal stability at crystallization during the heating process.In addition, this constituent has bad solderability.
Therefore, existing development overcome the problems referred to above novelty the rear surface of solar cell electrode with the slurry constituent urgent demand.
Summary of the invention
Technical problem
A target of the present invention is to provide the rear surface of solar cell electrode of the resistance that can the reduce backplate efficient to improve solar cell with silver slurry constituent.
Another target of the present invention is to provide the rear surface of solar cell electrode that can during the manufacturing of solar module, improve solderability with silver slurry constituent.
Solution
One aspect of the present invention provides a kind of rear surface of solar cell electrode with silver slurry constituent, and it comprises: (a) have average grain diameter (D
50) be spherical or tabular (plate) conduction silver powder of 0.3-1.5 μ m; (b) Bi
2O
3-SiO
2-Al
2O
3-B
2O
3-SrO is frit (glass frit); Reach (c) organic carrier.
Advantageous effects
Reduce resistance with silver slurry constituent and minimized that the content of impurity promotes solderability in the backplate according to rear surface of solar cell electrode of the present invention, promoted the efficient of solar cell and solar module whereby.
Embodiment
Optimal mode
Further details of the present invention below will be described.
Comprise (a) conduction silver powder, (b) frit, reach (c) organic carrier with silver slurry constituent according to rear surface of solar cell electrode of the present invention.
The included conduction silver powder (a) of silver slurry constituent of the present invention is spherical or tabular (plate) powder, the average grain diameter (D that it has
50) be 0.3-1.5 μ m.Again, the preferable maximum particle diameter (D that is somebody's turn to do conduction silver powder (a)
MAX) be 4.5 μ m, and its minimum grain size (D
MIN) be 0.1 μ m.If average grain diameter (D
50) and minimum grain size (D
MIN) be lower than the lower limit of above-mentioned scope, then the specific area of silver powder can become bigger and therefore increase the slurry viscosity.Because the viscosity that increases, the printing of slurry can be lowered, and restriction increases the content of silver powder.Average grain diameter (D
50) and maximum particle diameter (D
MAX) upper limit that is higher than above-mentioned scope then can reduce the compactness of silver particles in the slurry, so that possibly in interconnection, produce a large amount of holes behind the sintering process, thereby increase the resistance that interconnects.
Based on the total weight meter of this constituent, the preferable amount with 65-75wt% of this conductivity silver powder (a) exists.If this silver powder exists with the amount of the lower limit that is lower than above-mentioned scope, then the silver-colored interconnection layer of printing is can change behind sintering thin, so that the resistance of dorsal part interconnection layer increases, and the solderability of solar cell can be degenerated.If this silver powder exists with the amount of the upper limit that is higher than above-mentioned scope, then the slurry thickness of printing can become excessive, thereby causes the bending of Silicon Wafer.
Is Bi according to rear surface of solar cell electrode of the present invention with the included frit (b) of silver slurry constituent
2O
3-SiO
2-Al
2O
3-B
2O
3-SrO system.This frit (b) is by fusing sticking together between silver-colored interconnection layer and silicon wafer layer to be provided.
The SrO that is contained in this frit (b) is a kind of alkaline earth oxide, and it is used to control the transition temperature (transition temperature) of frit.Because SrO has big ionic radius, it has suppressed thermal stability and has reduced relevant problem, for example crystallization.Simultaneously, SrO has improved solderability and has increased the efficient of solar cell.
Based on the total weight meter of this constituent, the amount that this frit (b) is preferably with 0.01-10wt% exists, and is more preferred from 0.5-7wt%, also will be more preferred from 1-5wt%.If the content of frit is lower than the lower limit of above-mentioned scope in the constituent, then sticking together behind sintering process between the silver-colored interconnection layer of solar cell and p type silicon substrate can be reduced.If the content of this frit is higher than the upper limit of above-mentioned scope, then the resistance of slurry can increase and reduces the efficient of solar cell.
Though the not special restriction of the proportion of composing of frit (b), this frit is preferable have consist of Bi
2O
3Be 20-30mol%, SiO
2Be 25-35mol%,, Al
2O
3Be 5-15mol%, B
2O
3For 20-40mol%, and SrO be 1-10mol%.The physical property of glass depends on as the Si of network former and B, as the Bi of network intermidate oxide and Al, and as the proper proportion of the Sr of alkaline-earth metal.Therefore, be preferably the frit that use has the composition that satisfies above-mentioned number range.
And the softening point (Tg) that is used for frit of the present invention is preferably 400～500 ℃.If the softening point of frit is lower than the lower limit of above-mentioned scope, then the thermal coefficient of expansion of frit may increase, thereby behind the sintering process during solar cell is made, the bending of wafer possibly increase.If softening temperature is higher than the upper limit of above-mentioned scope, then frit maybe not can melt fully, so that the tackness of silver-colored interconnection layer possibly reduce.
With silver slurry constituent, based on the total weight meter of this constituent, the preferable amount with 20-34.9wt% of organic carrier (c) exists according to rear surface of solar cell electrode of the present invention.If the content of organic carrier is lower than the lower limit of above-mentioned scope in the constituent, then the viscosity of slurry can increase and reduce its printing.If the content of organic carrier is higher than the upper limit of above-mentioned scope, then the powder content of constituent can reduce, and makes to be difficult to guarantee that silver-colored interconnection layer has enough thickness.
This organic carrier (c) prepares by macromolecule resin is dissolved in organic solvent.Shake change agent, wetting agent, additive etc. if having needs, organic carrier further to contain.
Based on the total weight meter of organic carrier (c), the amount that macromolecule resin is preferably with 1-25wt% exists, and is more preferred from 5-25wt%.The content of the macromolecule resin in organic carrier is lower than the lower limit of above-mentioned scope, and then printing and the dispersion stabilization with the made silver slurry of constituent of the present invention can reduce.Again, if macromolecule resin content is higher than the upper limit of above-mentioned scope, then slurry possibly can't be used for printing.
The embodiment of macromolecule resin comprises polyvinylpyrrolidone, polyvinyl alcohol, polyethylene glycol, ethyl cellulose, rosin, phenolic resins, acrylic resin etc.
Preferred solvents has about 150～300 ℃ boiling point, so that can prevent to starch during printing process flowability dry and the control slurry.Preferred solvents is so that the total weight of organic carrier (c) becomes the amount existence of 100wt%.
The embodiment of solvent includes but not limited to the glycol ether series solvent, for example tripropylene glycol methyl ether, DPG positive propyl ether, DPG n-butyl ether, tripropylene glycol n-butyl ether, propane diols phenylate, diethylene glycol ether, diethylene glycol n-butyl ether, diethylene glycol hexyl ether, glycol hexyl ether, triethylene glycol methyl ether, tri ethylene glycol ethyl ether, triethylene glycol n-butyl ether, ethylene glycol phenyl ether, terpineol,
(trade name), and ethylene glycol.
Based on the total weight meter of organic carrier (c), shake and become agent and wetting agent is preferable exists with the amount below the 5wt%.Shake change agent and wetting agent as long as into employed usually in this area, not particular determination.Shake and become agent and can be THIXATROLST (can available from Elementis (Hai Mingsi company)), and wetting agent can be for example can be available from Silwet L-77, Silwet L-7500 or the SilwetL-7280 of Momentive (Mitugao New Material Group).
Based on the total weight meter of organic carrier (c), there is, is more preferred from 1-5wt% in the preferable amount with 1-10wt% of additive.Additive comprises in this area employed usually, for example dispersant.Dispersant can use commercially available surfactant, and can singly plant or make up two kinds or more kinds of use.The embodiment of surfactant comprises nonionic surfactant, comprises the ethers surfactant, for example alkyl polyoxyethylene ether, alkaryl APEO, poloxalkol; Ester ethers surfactant, the for example APEO of the APEO of glyceride, sorb sugar ester, and the polyvinylether of sorbitol ester; Esters surface active agent, for example cithrol, glyceride, sorb sugar ester, propylene glycol ester, sugar ester, and alkyl gather grape candy glycosides; And nitrogenous surfactant, for example fatty acid alkanol amides, polyoxyethylene fatty acid acid amides, polyoxyethylene alkyl amine, and amine oxide; And the polymer system surfactant, for example polyvinyl alcohol, polyvinylpyrrolidone, polyacrylic acid, polyacrylic acid maleic acid and gather the 12-hydroxystearic acid.
Can be used for commercial surfactant of the present invention and comprise Hypermer KD (Uniqema, favourable Keimar Corp.), AKM 0531 (Nippon Oil&Fats Co. again; Ltd.; Japan grease Co., Ltd), KP (Shin-Estu Chemical Co., Ltd), POLYFLOW (chemistry limited company of common prosperity society), EFTOP (Tokem Products Co., Ltd., Tokem Products Co., Ltd), Asahi guard (Asahi Glass limited company), Surflon (Asahi Glass limited company), SOLSPERSE (Zeneca Co.; Ltd.; Zeneca Co., Ltd), EFKA (EFKA Chemicals Co., Ltd., EFKA chemistry Co., Ltd), PB 821 (aginomoto limited company), BYK-184, BYK-185, BYK-2160 and Anti-Terra U (BYK Co.; Ltd., Societe BIC S.A.).
Reduce the resistance of backplate with silver slurry constituent and minimized the solderability that the content of impurity in the backplate promotes backplate according to rear surface of solar cell electrode of the present invention, improved the efficient of solar cell and solar module whereby.
The pattern of invention
Below, further specify the present invention with reference to embodiment, manufacturing example and test case.Yet scope of the present invention is not limited by these embodiment, manufacturing example or test case.
Embodiment 1 to 3 and comparative example 1 to 4: the rear surface of solar cell electrode is with the preparation of silver slurry constituent
Composition shown in the table 1 is mixed with each other with the amount shown in the table 1.Then, use the blender of carrying out rotation and revolution simultaneously with 1,000rpm stirred the mixture 3 minutes, so prepared the rear surface of solar cell electrode with silver slurry constituent.
At this moment, the composition of frit, transition point (Tg), thermal coefficient of expansion and softening point (Tdsp) are shown in following table 2.
[table 1]
C-1: diethylene glycol monobutyl ether
C-2: ethyl cellulose
[table 2]
Make example 1 to 3 and relatively make example 1 to 4: the manufacturing of solar cell
Single crystal wafers with 156x156mm size and 200 μ m thickness is accepted areal deformation (texturing) processing and is formed the pyramid structure with about 4-6 μ m height.Then, on the N of wafer side, deposit SiNx.Then, each silver slurry constituent that the rear surface of solar cell electrode of use embodiment 1 to 3 and comparative example 1 to 4 is used on the dorsal part of wafer prints bus (bus bar) and dry.Then, use screen printing plate with aluminium electrode slurry (AMP-BL122C; Dongwoo Fine Chem Co., Ltd.) is coated on the dorsal part and the drying of each wafer, and uses the silver slurry to print finger-shaped circuit (finger line) and dry in the preceding SiNx side of each wafer.Thereafter, Silicon Wafer is that 800～950 ℃ mode is sintered with the temperature between the sintering zone in infrared ray continous way sintering furnace, makes solar cell whereby.Sintering process also can be with Silicon Wafer through band oven (belt furnace) and carry out the silver slurry of the drying of sintering front side and dorsal part simultaneously.Band oven comprises about 600 ℃ burnout district (burn-out) and about 860 ℃ sintering zone (firing).In band oven, the organic substance in the slurry is burnouted, then in the front side of wafer and the silver on the rear side and/or aluminium be melted to form electrode.
The solar cell of manufacturing is called " making example 1 to 3 " and reaches " relatively making example 1 to 4 ", uses the rear surface of solar cell electrode according to embodiment 1 to 3 and comparative example 1 to 4 to form bus with silver slurry constituent.
Test case: the assessment of the character of solar cell
< assessment of solar cell >
The Solar cell performance of manufacturing uses SCM-100 (FitTech, the special scientific and technological joint-stock company of favour) to assess, and the result of assessment is shown in following table 3.
< crooked assessment >
The bending of solar cell is assessed, and the result of assessment is shown in following table 3.The standard of the bending of solar cell is following:
Well: be less than 1mm; And
Bad: greater than 1mm
< assessment of the solderability of solar cell >
The solderability of the solar cell of manufacturing is to use two kinds of copper strips assessments: a kind of for being coated with the copper strips that consists of 96.5Sn/3.5Ag; And it is a kind of for being coated with the copper strips that consists of 62Sn/36Pb/2Ag.The scolding tin temperature of leaded (62Sn/36Pb/2Ag) scolding tin is 230 ℃, and the scolding tin temperature of unleaded (96.5Sn/3.5Ag) scolding tin is 320 ℃, and the scolding tin time is 5-7 second.The scaling powder that uses is MF200.
Again, solderability is based on tack strength and assesses, and tack strength is to pull belt by the angle that is 90 ° to obtain with relative solar cell surface.The evaluation criteria of tack strength is following: be lower than 200g: low; 200-300g: medium; And 300-400g or higher: good.Assessment result is shown in following table 3.
[table 3]
By on show that table 3 can find out, be higher than the efficient of relatively making example according to the efficient of making example of the present invention and reach 0.2-0.5%, mean compared to relatively making example, make example and have splendid efficient and solderability.
Claims (6)
1. a rear surface of solar cell electrode is with silver slurry constituent, and it comprises:
(a) has average grain diameter (D
50) be the spherical or tabular conduction silver powder of 0.3-1.5 μ m;
(b) Bi
2O
3-SiO
2-Al
2O
3-B
2O
3-SrO is a frit; And
(c) organic carrier.
2. silver slurry constituent according to claim 1, wherein based on the total weight meter, said constituent comprises: the conduction silver powder (a) of 65-75wt%; The Bi of 0.1-10wt%
2O
3-SiO
2-Al
2O
3-B
2O
3-SrO is frit (b); And the organic carrier (c) of 20-34.9wt%.
3. silver slurry constituent according to claim 1, the maximum particle diameter of wherein said conduction silver powder (a) is 4.5 μ m, and its minimum grain size is 0.1 μ m.
4. silver slurry constituent according to claim 1, wherein said Bi
2O
3-SiO
2-Al
2O
3-B
2O
3-SrO is that the ratio of components of frit is: the Bi of 20-30mol%
2O
3, 25-35mol% SiO
2, 5-15mol% Al
2O
3, 20-40mol% B
2O
3, and the SrO of 1-10mol%.
5. silver slurry constituent according to claim 1, wherein based on the total weight meter of said organic carrier (c), said organic carrier (c) comprises the polymer resin of 1-25wt%, and all the other are solvent.
6. silver slurry constituent according to claim 1, wherein said constituent does not contain aluminium powder.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2009-0125885 | 2009-12-17 | ||
| KR20090125885 | 2009-12-17 | ||
| KR1020100128828A KR20110069724A (en) | 2009-12-17 | 2010-12-16 | Silver paste composition for back electrode of solar cell |
| PCT/KR2010/009013 WO2011074888A2 (en) | 2009-12-17 | 2010-12-16 | Electrode paste composition for rear surface of solar cell |
| KR10-2010-0128828 | 2010-12-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102652339A true CN102652339A (en) | 2012-08-29 |
Family
ID=44401479
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010800533415A Pending CN102652339A (en) | 2009-12-17 | 2010-12-16 | Electrode paste composition for rear surface of solar cell |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR20110069724A (en) |
| CN (1) | CN102652339A (en) |
| TW (1) | TW201129657A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104778988A (en) * | 2014-01-09 | 2015-07-15 | 上海贺利氏工业技术材料有限公司 | Low silver conductive paste |
| CN107234366A (en) * | 2017-06-16 | 2017-10-10 | 深圳市赛雅电子浆料有限公司 | One kind welds silver paste and its preparation technology and applies welding procedure |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013058417A1 (en) * | 2011-10-18 | 2013-04-25 | 동우 화인켐 주식회사 | Silver paste composition (1) for the back electrode of a solar cell |
| WO2013058418A1 (en) * | 2011-10-18 | 2013-04-25 | 동우 화인켐 주식회사 | Silver paste composition (2) for the back electrode of a solar cell |
| CN103117133B (en) * | 2012-12-07 | 2016-08-31 | 蚌埠市智峰科技有限公司 | A kind of preparation method of the solar cell conductive mixed slurry containing castor oil hydrogenated |
| KR101802546B1 (en) | 2012-12-29 | 2017-11-30 | 제일모직주식회사 | Composition for forming solar cell and electrode prepared using the same |
| WO2014104623A1 (en) * | 2012-12-29 | 2014-07-03 | 제일모직 주식회사 | Composition for forming electrode of solar cell, and electrode manufactured using same |
| KR101967164B1 (en) * | 2013-01-25 | 2019-04-09 | 동우 화인켐 주식회사 | Silver paste composition and electrode using the same |
| CN103177796A (en) * | 2013-03-22 | 2013-06-26 | 苏州开元民生科技股份有限公司 | Back electrode silver paste of crystalline silicon solar battery and preparation method for back electrode silver paste |
| KR20170064570A (en) * | 2015-10-31 | 2017-06-12 | 엘에스니꼬동제련 주식회사 | Electrode Paste For Solar Cell's Electrode And Solar Cell |
| KR101981127B1 (en) * | 2016-12-28 | 2019-05-22 | 한국세라믹기술원 | Screen printable anti-reflective coating composition and manufacturing method of anti-reflective coating film using the coating composition |
| KR102220531B1 (en) | 2018-04-23 | 2021-02-24 | 삼성에스디아이 주식회사 | Composition for forming electrode, electrode manufactured using the same and solar cell |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101055896A (en) * | 2005-04-14 | 2007-10-17 | E.I.内穆尔杜邦公司 | Conductive compositions and processes for use in the manufacture of semiconductor devices |
| KR100798258B1 (en) * | 2005-10-11 | 2008-01-24 | 이 아이 듀폰 디 네모아 앤드 캄파니 | Aluminum thick film compositions, electrodes, semiconductor devices and methods of making thereof |
| CN101164939A (en) * | 2006-10-19 | 2008-04-23 | 北京印刷学院 | Leadless barium borate low melting glass and application thereof |
| KR20080099406A (en) * | 2007-05-09 | 2008-11-13 | 주식회사 동진쎄미켐 | A paste for producing electrode of solar cell |
-
2010
- 2010-12-16 KR KR1020100128828A patent/KR20110069724A/en not_active Application Discontinuation
- 2010-12-16 CN CN2010800533415A patent/CN102652339A/en active Pending
- 2010-12-17 TW TW99144513A patent/TW201129657A/en unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101055896A (en) * | 2005-04-14 | 2007-10-17 | E.I.内穆尔杜邦公司 | Conductive compositions and processes for use in the manufacture of semiconductor devices |
| KR100798258B1 (en) * | 2005-10-11 | 2008-01-24 | 이 아이 듀폰 디 네모아 앤드 캄파니 | Aluminum thick film compositions, electrodes, semiconductor devices and methods of making thereof |
| CN101164939A (en) * | 2006-10-19 | 2008-04-23 | 北京印刷学院 | Leadless barium borate low melting glass and application thereof |
| KR20080099406A (en) * | 2007-05-09 | 2008-11-13 | 주식회사 동진쎄미켐 | A paste for producing electrode of solar cell |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104778988A (en) * | 2014-01-09 | 2015-07-15 | 上海贺利氏工业技术材料有限公司 | Low silver conductive paste |
| CN104778988B (en) * | 2014-01-09 | 2017-10-24 | 上海贺利氏工业技术材料有限公司 | Low conductive silver slurry |
| CN107234366A (en) * | 2017-06-16 | 2017-10-10 | 深圳市赛雅电子浆料有限公司 | One kind welds silver paste and its preparation technology and applies welding procedure |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201129657A (en) | 2011-09-01 |
| KR20110069724A (en) | 2011-06-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102652339A (en) | Electrode paste composition for rear surface of solar cell | |
| CN102403047B (en) | Paste for solar cell electrode and electrode using the same and solar cell using the same | |
| KR101765986B1 (en) | Conductive paste | |
| JP2006313744A (en) | Conductive thick film composition, electrode, and semiconductor device composed of same | |
| CN104392771A (en) | Paste composition for electrodes, and solar cell | |
| WO2012141187A1 (en) | Electronic component, aluminum electrode conductive paste for application in same, and aluminum electrode glass composition | |
| TWI638367B (en) | Thick-film composition containing antimony oxides and their use in the manufacture of semiconductor devices | |
| CN104715804A (en) | Composition for solar cell electrodes and electrode fabricated using the same | |
| CN102144264A (en) | Aluminum pastes and use thereof in the production of silicon solar cells | |
| CN102803171A (en) | Glass frit for formation of electrode, and electrically conductive paste for formation of electrode and solar cell each utilizing same | |
| JP2016103354A (en) | Conductive composition | |
| SG190520A1 (en) | Thick film conductive composition and use thereof | |
| EP2754184A1 (en) | Process for the production of lfc-perc silicon solar cells | |
| CN105229750A (en) | Composition for electrode formation, solar cell device and solar cell | |
| CN102855961B (en) | Paste for formation of solar cell back electrodes and preparation method thereof | |
| TWI655784B (en) | Front electrode for solar cell and solar cell comprising the same | |
| TW201936530A (en) | Glass, glass manufacturing method, conductive paste and solar cell capable of forming an electrode that penetrates the insulating film and sufficiently ensures contact with the semiconductor substrate at low cost and high productivity | |
| CN113643841B (en) | Acetate-resistant back silver, preparation method thereof and PERC battery comprising acetate-resistant back silver | |
| KR20130049112A (en) | Silver paste composition and electrode using the same | |
| JP5990315B2 (en) | Conductive composition | |
| KR20110121427A (en) | Silver paste composition for a back electrode of solar cell | |
| TWI721620B (en) | Composition for forming solar cell electrode and solar cell electrode prepared using the same | |
| KR20140074415A (en) | Manufacturing method for back contact of solar cell and solar cell device using the same | |
| KR101853417B1 (en) | Conductive paste composition for electrode of solar cell and solar cell comprising electrode manufactured using the same | |
| WO2011074888A2 (en) | Electrode paste composition for rear surface of solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120829 |