CN102641869A - Wafer cleaning device and cleaning method - Google Patents
Wafer cleaning device and cleaning method Download PDFInfo
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- CN102641869A CN102641869A CN2012101135562A CN201210113556A CN102641869A CN 102641869 A CN102641869 A CN 102641869A CN 2012101135562 A CN2012101135562 A CN 2012101135562A CN 201210113556 A CN201210113556 A CN 201210113556A CN 102641869 A CN102641869 A CN 102641869A
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Abstract
The invention discloses a wafer cleaning device and a cleaning method and relates to the cleaning technical field of a semiconductor integrated circuit device. The wafer cleaning device comprises a wafer bearing unit for bearing a wafer, a wafer front surface ultrasonic cleaning nozzle arranged above the wafer bearing unit, a wafer back surface ultrasonic cleaning unit arranged in the wafer bearing unit, a rotary shaft, a hollow pipe, a spraying arm, a spraying arm motor and a wafer rotating motor. According to the invention, a uniform sound field is formed in cleaning fluid of the upper surface and the lower surface of the wafer through phase shift and distortion formed by the synthesis of ultrasonic wave with a first preset frequency, generated by the wafer front surface ultrasonic cleaning nozzle and ultrasonic wave with a second preset frequency, generated by the wafer back surface ultrasonic cleaning unit, so that the wafer is cleaned, the strength uniformity of the ultrasonic wave sound field on the wafer is met, the cleaning effect on the wafer is improved, meanwhile, the damage to the feature size and structure of the wafer caused by severe cavitation generated by the ultrasonic wave is reduced and eliminated.
Description
Technical field
The present invention relates to semiconductor device cleaning technique field, particularly a kind of wafer cleaner and cleaning method.
Background technology
Along with the integrated circuit characteristic size enters into the deep-submicron stage, the control of cleaning in the wafer fabrication process is required also increasingly high, the uniformity of cleaning has become a challenging problem.Adopt the cleaning under the mega sonic wave effect to help to improve the cleaning performance of wafer, and can improve the removal efficient of contamination particle greatly.But because the interference of mega sonic wave sound field can form the very high focus of a lot of sound field intensities in wafer surface, also form the very low dead point of a lot of sound field intensities simultaneously, be difficult to reach in the uniformity of the sound field intensity of wafer surface.In addition, the formed focus of mega sonic wave sound field interference is easy to make bubble to break, and the bubble cavitation erosion that forms of breaking has also increased risk and possibility that the graphical wafer fine structure damages.
Though in improved process; There is the way of the frequency scanning utilized to reduce emerging of focus; But because frequency scanning is only around this centre frequency; And this only is applied on the mega sonic wave oscillator around the scanning that centre frequency changes, and the intrinsic frequency of the mechanical oscillation of mega sonic wave oscillator is certain (generally equaling the centre frequency of mega sonic wave), and the variation that departs from centre frequency can cause the minimizing of oscillator amplitude to make the megasonic energy of propagating descend; Thereby the sound energy density that on wafer surface, forms is along with scan frequency changes, and can't produce inhomogeneity sound field.Though the way of also useful frequency stack combinations, because the voltage of frequency stack combinations still is applied on the same mega sonic wave oscillator, the excessive efficient that has influenced the electroacoustic conversion of the variation of oscillator vibration makes the effect of cleaning descend to some extent.
Summary of the invention
The technical problem that (one) will solve
The technical problem that the present invention will solve is: how to satisfy the uniformity of the mega sonic wave sound field intensity on the wafer, to improve the cleaning performance to wafer.
(2) technical scheme
For solving the problems of the technologies described above; The invention provides a kind of wafer cleaner; Said device comprises: be used for the crystal chip bearing unit of bearing wafer, the front wafer surface mega sonic wave that is arranged at said crystal chip bearing unit top cleans shower nozzle, is arranged at chip back surface mega sonic wave cleaning unit, rotating shaft, hollow tube, spray arm, spray arm motor and wafer electric rotating machine in the said crystal chip bearing unit; Said front wafer surface mega sonic wave cleaning shower nozzle is provided with liquid inlet and downside is provided with the liquid spraying outlet that is communicated with said liquid inlet; Said spray arm cleans shower nozzle with said front wafer surface mega sonic wave and is connected, and said spray arm is connected with the rotor of said spray arm motor, and the rotor of said wafer electric rotating machine is connected with said rotating shaft; Said rotating shaft is connected with the center of said crystal chip bearing unit; The axle center of said rotating shaft is provided with hollow tube, is provided with back side feed pipe in the said hollow tube, and said chip back surface mega sonic wave cleaning unit is fixed on the said hollow tube.
Preferably, said device also comprises: control module, said spray arm motor is connected with said control module respectively with said wafer electric rotating machine.
Preferably; Said front wafer surface mega sonic wave cleans shower nozzle and comprises: first shell, first transducer and first resonator; Said first resonator is located between said first transducer and the said crystal chip bearing unit, and said first transducer and first resonator all are located in said first shell.
Preferably, said first transducer is located in first chamber, and said first chamber is located in said first shell, and relative two ends are respectively equipped with the gentle cold fluid outlet of air cooling fluid intake on said first chamber.
Preferably, be provided with coupling layer between said first transducer and said first resonator, said coupling layer closely is connected with said first transducer.
Preferably, said first resonator is provided with the hole array, and the axially bored line in the array of said hole is vertical, and said hole array is said liquid spraying outlet.
Preferably; Said crystal chip bearing unit is discoid chuck; Said chuck is provided with at least three spoke-like claws that radially distribute, and is used for supporting wafers, and said chip back surface mega sonic wave cleaning unit comprises: second shell and second transducer; Said second transducer is made up of one or more piezo-electric crystal oscillators and is located in said second shell, being shaped as rectangle or triangle and can covering the radius of said wafer of said second transducer.
Preferably, said second transducer is located in second chamber, and said second chamber is located in said second shell, and the said second chamber bottom side is respectively equipped with the gentle cold fluid outlet of air cooling fluid intake.
Preferably, said front wafer surface mega sonic wave cleans shower nozzle and adopts different megasonic frequency with chip back surface mega sonic wave cleaning unit.
The invention also discloses a kind of cleaning method, said method comprising the steps of based on described device:
S1: wafer is positioned on the crystal chip bearing unit;
S2: electric rotating machine drives the rotation of said crystal chip bearing unit through rotating shaft; The front mega sonic wave cleans shower nozzle and sprays cleaning fluid to upper wafer surface; The spray arm motor drives said front mega sonic wave through spray arm and cleans the shower nozzle rotation; Back side feed pipe is to said wafer lower surface ejection cleaning fluid, and chip back surface mega sonic wave cleaning unit is started working;
S3: said front mega sonic wave cleans the mega sonic wave that shower nozzle produces first predeterminated frequency; Back side mega sonic wave cleaning unit produces the mega sonic wave of second predeterminated frequency; The synthetic formed phase shift of the mega sonic wave of the mega sonic wave of said first predeterminated frequency and second predeterminated frequency forms uniform sound field with distortion in the cleaning fluid of said upper wafer surface and lower surface; To realize even cleaning, reduce simultaneously and eliminated the violent cavitation erosion that produces by mega sonic wave destruction the wafer feature dimensional structure to wafer.
(3) beneficial effect
The present invention is through the synthetic formed phase shift of mega sonic wave and the uniform sound field of formation in the cleaning fluid of said upper wafer surface and lower surface that distorts of the mega sonic wave of first predeterminated frequency of front wafer surface mega sonic wave cleaning shower nozzle generation and second predeterminated frequency that chip back surface mega sonic wave cleaning unit produces; To realize cleaning to wafer; Satisfied the uniformity of the mega sonic wave sound field intensity on the wafer; Improved cleaning performance, reduced simultaneously and eliminated the violent cavitation erosion that produces by mega sonic wave destruction the wafer feature dimensional structure to wafer.
Description of drawings
Fig. 1 is the structural representation according to the wafer cleaner of one embodiment of the present invention;
Fig. 2 is the concrete structure sketch map that the front mega sonic wave cleans shower nozzle in the device shown in Figure 1.
The specific embodiment
Below in conjunction with accompanying drawing and embodiment, specific embodiments of the invention describes in further detail.Following examples are used to explain the present invention, but are not used for limiting scope of the present invention.
Fig. 1 is the structural representation according to the wafer cleaner of one embodiment of the present invention; With reference to Fig. 1; The device of this embodiment comprises: be used for the crystal chip bearing unit 5 of bearing wafer 4, the front wafer surface mega sonic wave that is arranged at 5 tops, said crystal chip bearing unit cleans shower nozzle 1, is arranged at chip back surface mega sonic wave cleaning unit 6, rotating shaft 9, hollow tube 7, spray arm 2, spray arm motor 11 and wafer electric rotating machine 13 in the said crystal chip bearing unit 5; Said front wafer surface mega sonic wave cleaning shower nozzle 1 is provided with liquid inlet 10 and downside is provided with the liquid spraying outlet 3 that is communicated with said liquid inlet 10; Said spray arm 2 cleans shower nozzle 1 with said front wafer surface mega sonic wave and is connected; Said spray arm 2 is connected with the rotor of said spray arm motor 11; The rotor of said wafer electric rotating machine 13 is connected with said rotating shaft 9, and said rotating shaft 9 is connected with the center of said crystal chip bearing unit 5, and the axle center of said rotating shaft 9 is provided with hollow tube 7; Be provided with back side feed pipe 8 in the said hollow tube 7, said chip back surface mega sonic wave cleaning unit 6 is fixed on the said hollow tube 7.
For realizing control to said spray arm motor 11 and electric rotating machine 13; Preferably, said device also comprises: control module 12, and said spray arm motor 11 is connected with said control module 12 respectively with said electric rotating machine 13; For ease of said control module 12 is carried out operations such as parameter is provided with; In this embodiment, preferably, said control module 12 is connected with operating terminal 14.
With reference to Fig. 2; Said front wafer surface mega sonic wave cleans shower nozzle 1 and comprises: the first shell 1-1, the first transducer 1-2 and the first resonator 1-8; The said first resonator 1-8 is located between said first transducer 1-2 and the said crystal chip bearing unit 5, and the said first transducer 1-2 and the first resonator 1-8 all are located in the said first shell 1-1.
The common used material of the piezo-electric crystal oscillator in the transducer is the lead zirconate titanate of polarization; When piezo-electric crystal oscillator two sides applies the alternating voltage of a frequency at 700kHz～2MHz; The piezo-electric crystal oscillator produces mechanical oscillation under the effect of alternating voltage; If the frequency of oscillation of alternating voltage equals the natural mode shape of quartz crystal unit itself, the mechanical oscillation amplitude of this oscillator is maximum.
Because first transducer 1-2 temperature when operation is higher; For reducing the running temperature of the said first transducer 1-2; And the service life of improving the said first transducer 1-2, preferably, the said first transducer 1-2 is located in the first chamber 1-3; The said first chamber 1-3 is located in the said first shell 1-1, and the said first chamber 1-3 goes up relative two ends and is respectively equipped with the gentle cold fluid outlet of air cooling fluid intake 1-4 1-5.
Preferably; Be provided with coupling layer 1-6 between said first transducer 1-2 and the said first resonator 1-8; Said coupling layer 1-6 closely is connected with the said first transducer 1-2, and said coupling layer 1-6 can be used as acoustic filter, is used for the mega sonic wave that filtering does not meet cleaning requirement.
The material of said coupling layer 1-6 can be the very low glue of fusing point, also can be for being designed to the tack coat bonding of multilayer couplant with micron thickness.
Preferably, the said first resonator 1-8 is provided with the hole array, and the axially bored line in the array of said hole is vertical, and said hole array is said liquid spraying outlet 3.
The mega sonic wave that the first transducer 1-2 produces is when the hole array through the first resonator 1-8; Can on the medium face that hole and cleaning fluid intersect, produce repeatedly reflection, transmission, refraction with the uneven sound wave of the axis of hole array; ...; Through so repeatedly reflection, transmission, refraction, produced very big decay with the uneven acoustic wave energy of the axis of hole array, and be greatly improved with the shared ratio of acoustic wave energy composition of the parallel axes of hole array.Act on the uneven acoustic wave energy of the axis of hole array and always can be decomposed into the power vertical on the characteristic size and along the power of characteristic size parallel sidewalls with the characteristic size sidewall.And the moment of flexure of the vibration that the power vertical with the characteristic size sidewall produces performance vibration has strong mechanical damage effect to fine feature structure.With the power of characteristic size parallel sidewalls only fine feature structure is had compression, can not produce the effect of moment of flexure.Therefore, the transducer that has the hole array of distributed frame can reduce the destruction of mega sonic wave cleaning to wafer greatly.
With reference to Fig. 1, preferably, said crystal chip bearing unit 5 is discoid chuck; The main body of said chuck is provided with at least three spoke-like claws that radially distribute, and is used for supporting wafers, wherein; The height of claw is 10～20mm, is used to provide the enough spaces of mega sonic wave cleaning unit, the back side.Said chip back surface mega sonic wave cleaning unit 6 comprises: second shell and second transducer; Said second transducer is made up of one or more piezo-electric crystal oscillators and is located in said second shell, being shaped as rectangle or triangle and can covering the radius of said wafer of said second transducer.
Because second transducer temperature when operation is higher; For reducing the running temperature of said second transducer; And the service life of improving said second transducer; Said second transducer is located in second chamber, and said second chamber is located in said second shell, and the said second chamber bottom side is respectively equipped with the gentle cold fluid outlet of air cooling fluid intake.
Preferably; Said front wafer surface mega sonic wave cleans shower nozzle and adopts different megasonic frequency with chip back surface mega sonic wave cleaning unit; Said megasonic frequency is a fixed frequency, or is being that the center is scanned with a frequency, and the span of said megasonic frequency is 700kHz～2MHz.
The operation principle of the device of this embodiment is: under the drive of wafer electric rotating machine 13; Crystal chip bearing unit 5 drive wafers 4 rotate with the rotating speed of 25rpm; Chip back surface mega sonic wave cleaning unit 6 below the wafer 4 is fixed on the hollow tube 7, does not rotate with the rotation of wafer 4.Chip back surface mega sonic wave cleaning unit 6 is made up of the square piezo-electric crystal oscillator of a block length, and its length equals the radius of wafer 4, with the distance of wafer 4 be several millimeters.By the gap of back side feed pipe 8 between chip back surface mega sonic wave cleaning unit 6 and wafer 4 the cleaning soup is provided, and is full of this several millimeters second transducer and the backside space of wafer.Because the surface tension of fluid, when carrying out cleaning, this space is cleaned medium all the time and is full of.Vibration million information of utilizing chip back surface mega sonic wave cleaning unit 6 to be produced are steeped or the effect of formed cavitation erosion of million information follicular ruptures and perturbation stream is peeled off pollutant from chip back surface, thus the back side of efficient clean wafers.
When carrying out cleaning; Chip back surface mega sonic wave cleaning unit 6 adopts fixed frequency; The front mega sonic wave cleans shower nozzle 1 and adopts around setting centre frequency scanning (the scanning here; Be that the spray arm motor drives the rotation of said front mega sonic wave cleaning shower nozzle through spray arm), back side mega sonic wave cleaning unit 6 is fixed, and the front mega sonic wave cleans shower nozzle 1 in upper wafer surface continuous sweep; Utilize the phase shift of the synthetic formed waveform of two mega sonic waves that transducer excited in the cleaning fluid of said upper wafer surface and lower surface, to form uniform sound field, reach the effect that wafer is evenly cleaned thus with distortion.
The invention also discloses a kind of cleaning method, said method comprising the steps of based on described device:
S1: wafer is positioned on the crystal chip bearing unit;
S2: electric rotating machine drives the rotation of said crystal chip bearing unit through rotating shaft; The front mega sonic wave cleans shower nozzle and sprays cleaning fluid to upper wafer surface; The spray arm motor drives said front mega sonic wave through spray arm and cleans the shower nozzle rotation; Back side feed pipe is to said wafer lower surface ejection cleaning fluid, and chip back surface mega sonic wave cleaning unit is started working;
S3: said front mega sonic wave cleans the mega sonic wave that shower nozzle produces first predeterminated frequency; Back side mega sonic wave cleaning unit produces the mega sonic wave of second predeterminated frequency; The synthetic formed phase shift of the mega sonic wave of the mega sonic wave of said first predeterminated frequency and second predeterminated frequency forms uniform sound field with distortion in the cleaning fluid of said upper wafer surface and lower surface; To realize even cleaning, reduce simultaneously and eliminated the violent cavitation erosion that produces by mega sonic wave destruction the wafer feature dimensional structure to wafer.
Above embodiment only is used to explain the present invention; And be not limitation of the present invention; The those of ordinary skill in relevant technologies field under the situation that does not break away from the spirit and scope of the present invention, can also be made various variations and modification; Therefore all technical schemes that are equal to also belong to category of the present invention, and scope of patent protection of the present invention should be defined by the claims.
Claims (10)
1. wafer cleaner; It is characterized in that; Said device comprises: be used for the crystal chip bearing unit of bearing wafer, the front wafer surface mega sonic wave that is arranged at said crystal chip bearing unit top cleans shower nozzle, is arranged at chip back surface mega sonic wave cleaning unit, rotating shaft, hollow tube, spray arm, spray arm motor and wafer electric rotating machine in the said crystal chip bearing unit; Said front wafer surface mega sonic wave cleaning shower nozzle is provided with liquid inlet and downside is provided with the liquid spraying outlet that is communicated with said liquid inlet; Said spray arm cleans shower nozzle with said front wafer surface mega sonic wave and is connected, and said spray arm is connected with the rotor of said spray arm motor, and the rotor of said wafer electric rotating machine is connected with said rotating shaft; Said rotating shaft is connected with the center of said crystal chip bearing unit; The axle center of said rotating shaft is provided with hollow tube, is provided with back side feed pipe in the said hollow tube, and said chip back surface mega sonic wave cleaning unit is fixed on the said hollow tube.
2. device as claimed in claim 1 is characterized in that, said device also comprises: control module, said spray arm motor is connected with said control module respectively with said wafer electric rotating machine.
3. device as claimed in claim 1; It is characterized in that; Said front wafer surface mega sonic wave cleans shower nozzle and comprises: first shell, first transducer and first resonator; Said first resonator is located between said first transducer and the said crystal chip bearing unit, and said first transducer and first resonator all are located in said first shell.
4. device as claimed in claim 3 is characterized in that, said first transducer is located in first chamber, and said first chamber is located in said first shell, and relative two ends are respectively equipped with the gentle cold fluid outlet of air cooling fluid intake on said first chamber.
5. device as claimed in claim 3 is characterized in that, is provided with coupling layer between said first transducer and said first resonator, and said coupling layer closely is connected with said first transducer.
6. device as claimed in claim 3 is characterized in that, said first resonator is provided with the hole array, and the axially bored line in the array of said hole is vertical, and said hole array is said liquid spraying outlet.
7. device as claimed in claim 3; It is characterized in that; Said crystal chip bearing unit is discoid chuck; Said chuck is provided with at least three spoke-like claws that radially distribute, and is used for supporting wafers, and said chip back surface mega sonic wave cleaning unit comprises: second shell and second transducer; Said second transducer is made up of one or more piezo-electric crystal oscillators and is located in said second shell, being shaped as rectangle or triangle and can covering the radius of said wafer of said second transducer.
8. device as claimed in claim 7 is characterized in that, said second transducer is located in second chamber, and said second chamber is located in said second shell, and the said second chamber bottom side is respectively equipped with the gentle cold fluid outlet of air cooling fluid intake.
9. like each described device in the claim 1～8, it is characterized in that said front wafer surface mega sonic wave cleans shower nozzle and adopts different megasonic frequency with chip back surface mega sonic wave cleaning unit.
10. the cleaning method based on each described device in the claim 1～9 is characterized in that, said method comprising the steps of:
S1: wafer is positioned on the crystal chip bearing unit;
S2: electric rotating machine drives the rotation of said crystal chip bearing unit through rotating shaft; The front mega sonic wave cleans shower nozzle and sprays cleaning fluid to upper wafer surface; The spray arm motor drives said front mega sonic wave through spray arm and cleans the shower nozzle rotation; Back side feed pipe is to said wafer lower surface ejection cleaning fluid, and chip back surface mega sonic wave cleaning unit is started working;
S3: said front mega sonic wave cleans the mega sonic wave that shower nozzle produces first predeterminated frequency; Back side mega sonic wave cleaning unit produces the mega sonic wave of second predeterminated frequency; The synthetic formed phase shift of the mega sonic wave of the mega sonic wave of said first predeterminated frequency and second predeterminated frequency forms uniform sound field with distortion in the cleaning fluid of said upper wafer surface and lower surface; To realize even cleaning, reduce simultaneously and eliminated the violent cavitation erosion that produces by mega sonic wave destruction the wafer feature dimensional structure to wafer.
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| CN2012101135562A CN102641869A (en) | 2012-04-17 | 2012-04-17 | Wafer cleaning device and cleaning method |
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| CN104128285A (en) * | 2014-07-16 | 2014-11-05 | 深圳市华星光电技术有限公司 | Nozzle cleaning device and method |
| CN106328561A (en) * | 2016-08-26 | 2017-01-11 | 北京七星华创电子股份有限公司 | Nondestructive cleaning device of graphic wafer capable of improving cleaning uniformity |
| CN106340477A (en) * | 2016-08-26 | 2017-01-18 | 北京七星华创电子股份有限公司 | Energy-uniformly-distributed ultrasonic/megasonic cleaning device |
| CN106345721A (en) * | 2016-08-26 | 2017-01-25 | 北京七星华创电子股份有限公司 | Graphic wafer non-destructive ultrasonic / megapromatic cleaning device |
| WO2018076152A1 (en) * | 2016-10-25 | 2018-05-03 | Acm Research (Shanghai) Inc. | Apparatus and method for cleaning semiconductor wafers |
| CN108364884A (en) * | 2017-12-08 | 2018-08-03 | 中国电子科技集团公司第十三研究所 | semiconductor wafer megasonic cleaning device |
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| CN111092033A (en) * | 2019-12-24 | 2020-05-01 | 广东工业大学 | Ultrasonic electrochemical composite wafer cleaning device and cleaning method thereof |
| CN111341690A (en) * | 2018-12-19 | 2020-06-26 | 北京北方华创微电子装备有限公司 | Spraying structure and reaction chamber |
| CN112676259A (en) * | 2020-12-30 | 2021-04-20 | 广州安费诺诚信软性电路有限公司 | Cleaning process of FPC board containing micro-pores |
| TWI776884B (en) * | 2018-04-24 | 2022-09-11 | 大陸商盛美半導體設備（上海）股份有限公司 | Apparatus and method for cleaning semiconductor wafers |
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| CN104128285B (en) * | 2014-07-16 | 2016-08-24 | 深圳市华星光电技术有限公司 | A kind of nozzle cleaning device and clean method thereof |
| CN104128285A (en) * | 2014-07-16 | 2014-11-05 | 深圳市华星光电技术有限公司 | Nozzle cleaning device and method |
| CN106328561B (en) * | 2016-08-26 | 2019-05-10 | 北京七星华创电子股份有限公司 | Improve the not damaged cleaning device of figure wafer of the cleaning uniformity |
| CN106328561A (en) * | 2016-08-26 | 2017-01-11 | 北京七星华创电子股份有限公司 | Nondestructive cleaning device of graphic wafer capable of improving cleaning uniformity |
| CN106340477A (en) * | 2016-08-26 | 2017-01-18 | 北京七星华创电子股份有限公司 | Energy-uniformly-distributed ultrasonic/megasonic cleaning device |
| CN106345721A (en) * | 2016-08-26 | 2017-01-25 | 北京七星华创电子股份有限公司 | Graphic wafer non-destructive ultrasonic / megapromatic cleaning device |
| CN109890520A (en) * | 2016-10-25 | 2019-06-14 | 盛美半导体设备（上海）有限公司 | The device and method for cleaning semi-conductor silicon chip |
| WO2018076152A1 (en) * | 2016-10-25 | 2018-05-03 | Acm Research (Shanghai) Inc. | Apparatus and method for cleaning semiconductor wafers |
| CN108364884A (en) * | 2017-12-08 | 2018-08-03 | 中国电子科技集团公司第十三研究所 | semiconductor wafer megasonic cleaning device |
| TWI776884B (en) * | 2018-04-24 | 2022-09-11 | 大陸商盛美半導體設備（上海）股份有限公司 | Apparatus and method for cleaning semiconductor wafers |
| CN111341690A (en) * | 2018-12-19 | 2020-06-26 | 北京北方华创微电子装备有限公司 | Spraying structure and reaction chamber |
| CN111341690B (en) * | 2018-12-19 | 2023-12-22 | 北京北方华创微电子装备有限公司 | Spraying structure and reaction chamber |
| CN110508537A (en) * | 2019-08-29 | 2019-11-29 | 南通大学 | Hydrojet efficient appliances and method in a kind of corrosion cleaning of improvement large-sized wafer |
| CN111092033A (en) * | 2019-12-24 | 2020-05-01 | 广东工业大学 | Ultrasonic electrochemical composite wafer cleaning device and cleaning method thereof |
| CN112676259A (en) * | 2020-12-30 | 2021-04-20 | 广州安费诺诚信软性电路有限公司 | Cleaning process of FPC board containing micro-pores |
| CN112676259B (en) * | 2020-12-30 | 2022-07-19 | 广州安费诺诚信软性电路有限公司 | Cleaning process of FPC board containing micro-holes |
| CN116916553A (en) * | 2023-09-12 | 2023-10-20 | 泰州市旺灵绝缘材料厂 | Circuit substrate cleaning equipment |
| CN116916553B (en) * | 2023-09-12 | 2023-11-14 | 泰州市旺灵绝缘材料厂 | Circuit substrate cleaning equipment |
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Application publication date: 20120822 |