CN102637584A - Transfer preparation method of patterned graphene - Google Patents
Transfer preparation method of patterned graphene Download PDFInfo
- Publication number
- CN102637584A CN102637584A CN201210117732XA CN201210117732A CN102637584A CN 102637584 A CN102637584 A CN 102637584A CN 201210117732X A CN201210117732X A CN 201210117732XA CN 201210117732 A CN201210117732 A CN 201210117732A CN 102637584 A CN102637584 A CN 102637584A
- Authority
- CN
- China
- Prior art keywords
- graphene
- pdms
- patterned
- transfer preparation
- patterned graphene
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention discloses a transfer preparation method of patterned graphene, which comprises the following steps: coating an adhesive material on a graphene surface, which grows on a catalytic metallic substrate, according to a designed pattern; coating a PDMS (polydimethylsiloxane) layer on the graphene surface, and thermosetting; soaking the obtained sample in an etching solution to remove the catalytic metallic substrate, so that the graphene with the adhesive material and the PDMS floats in the solution; transferring the graphene with the adhesive material and the PDMS onto a target substrate; and stripping the PDMS from the target substrate to obtain the patterned graphene. The method disclosed by the invention does not limit the use of materials of the target substrate; when stripping the PDMS, an expected pattern can be obtained without causing additional structure damage on the graphene, and meanwhile, the graphene surface is kept clean; and the invention can be used for preparing patterned graphene without expensive etching equipment.
Description
Technical field
The invention belongs to nano material and field of microelectronic devices, be specifically related to a kind of transfer preparation method of patterned graphene.
Background technology
Graphene is emerging in recent years two-dimensional nano material; Because this material has excellent mechanical performance, light transmittance, thermal conductivity, electric conductivity; In industry, can act as transparent electrode material, also can substitute the conductor material of present copper conductor simultaneously as integrated circuit in fields such as solar cell, contact panels.Going up employing chemical vapour deposition technique (CVD) preparation Graphene at catalytic metal substrate (like copper, nickel etc.) is the main production method that is applicable to that at present heavy industrialization is used; The Graphene that adopts this method to produce must adopt the certain process means that Graphene is transferred on the target substrate; And be made into the particular structural figure, could realize real commercial Application.The patterned graphene manufacture method mainly contains two kinds so far: a kind of is that the Graphene that earlier adopts ion beam etching, electron beam lithography or laser ablation technology will be grown on the metal substrate is graphical, and then use PMMA (polymethyl methacrylate) with patterned Graphene global transfer to target substrate; Second kind is that the Graphene that directly will be grown on the metal substrate all is transferred on the target substrate; Use PMMA as protective medium; Graphene to after shifting carries out graphical treatment through ion beam etching, electron beam lithography or laser ablation technology, like patent documentation CN 101872120 B.In the process of Graphene by metallic growth substrate-transfer to target substrate, can adopt wet method or dry method to shift, it mainly is to adopt spin-coating method at Graphene surface deposition PMMA or other colloid films that wet method shifts; Utilize chemical reagent corroding metal substrate again; Graphene is separated with metal substrate, after Graphene is transferred on the new target substrate, utilize organic solvents such as acetone or chloroform that the colloid film is dissolved again and go; Obtain the Graphene sample; When being attached with other organic materials like the goal displacement substrate surface, or target substrate itself destroyed by organic solvent easily, and then the application of this method is just placed restrictions on; It mainly is to adopt PDMS (dimethyl silicone polymer) or other thermal decomposition adhesive tape directly to be stamped in the Graphene surface that dry method shifts; Dielectric material as the protection Graphene; Utilize chemical reagent to use Graphene to separate with metal substrate again, Graphene is thrown off the PDMS diaphragm with mechanical means after transferring on the new target substrate again; Obtain final Graphene sample, but this method causes breaking of Graphene sample easily.When adopting ion beam etching, electron beam lithography or laser beam etching that Graphene is carried out patterned making; Usually on Graphene surface the spin coating colloid as mask; After etching is intact, need equally also to have the infringement of solvent to substrate with an organic solvent with the colloid flush away; And use ion beam, electron beam or this this high energy particle of laser beam or light beam to the existence infringement of organic material substrate, be only applicable to inorganic material substrates such as silicon chip, quartz.
Summary of the invention
The transfer preparation method who the purpose of this invention is to provide a kind of new patterned graphene, this method need not etching and can Graphene transferred on the new target substrate and realizes the graphical of Graphene.
The present invention realizes that the technical scheme that above-mentioned purpose adopts is following:
A kind of transfer preparation method of patterned graphene comprises the steps:
(1) applies cohesive material at the Graphene sample surfaces that is grown on the catalytic metal substrate according to designed patterns;
(2) again at whole sample surface-coated one deck PDMS protective layer;
(3) sample that step (2) is obtained is immersed in the etchant solution, and the catalytic metal substrate is removed in corrosion, and the Graphene that sticks toughness material and PDMS protective layer is swum in the solution;
(4) Graphene that step (3) gained is sticked toughness material and PDMS protective layer is transferred on the target substrate;
(5) again the PDMS protective layer is peeled off from target substrate, obtained patterned Graphene.
Further, said catalytic metal is copper or nickel.
Further, said cohesive material is PMMA, polyethylene or polystyrene.
Further, in the step (1), adopt Freehandhand-drawing, printing or printing type to apply cohesive material.
Further, said etchant solution liquor ferri trichloridi, ammonium persulfate solution, sodium peroxydisulfate solution or nitric acid.
Beneficial effect:
The present invention utilizes the difference of PMMA and PDMS and Graphene adhesion; Accomplish Graphene transfer ground simultaneously; Accomplish Graphene yet and graphically make, compare with existing wet method transfer method, the present invention does not need with an organic solvent surperficial like acetone Graphene colloid; Therefore this method is used upward not restriction to the material of target substrate; The graphical preparation of the present invention need not these expensive etching apparatuss of ion beam, electron beam or laser beam, can realize the making of patterned graphene, more is applicable to industrial applications.Compare with existing dry method transfer; Owing between PDMS and Graphene, increased the patterned PMMS of one deck; When peeling off PDMS; Can access the patterned graphene of anticipation, can not cause the too much colloid in extra structural breakage and Graphene surface residual, keep the cleaning on Graphene surface Graphene.
Description of drawings
Fig. 1 is the schematic flow sheet of the inventive method.
Sample surfaces sketch map when Fig. 2 shifts different step in the instance for Graphene.
Embodiment
Below in conjunction with embodiment and accompanying drawing the present invention is described further.
The present invention uses cohesive material (like PMMA, polyethylene, polystyrene) to cover the part that Graphene finally need be removed earlier; Unlapped part is the final pattern that needs making; And then cover whole Graphene surface with PDMS, and form layer protective layer, utilize PDMS, PMMA different with Graphene three adhesion; Because between PDMS and the PMMA, have strong adhesion between PMMA and the Graphene; And a little less than the adhesion very of PDMS and Graphene, when when target substrate is peeled off PDMS, PMMA and also together be stripped from by its Graphene that covers part; And the part that is not covered by PMMA is still stayed on the target substrate, obtains patterned Graphene.The present invention makes printing, printing, caustic solution in the figure fossil China ink alkene process, peels off and all adopt technological means well known in the art, is not described in detail in this.
Embodiment 1
Use chemical vapour deposition technique at copper foil surface growing and preparing Graphene, detailed process: with hydrogen and methane is source of the gas, and Copper Foil is placed in the tube furnace; Under vacuum environment, tube furnace is heated to 1000 degrees centigrade; Feed the hydrogen of 2sccm and the methane of 35sccm and also kept 15 minutes, close heater, treat that tube furnace is cooled to normal pressure after; Promptly growing on the surface of Copper Foil has the Graphene of individual layer, like Fig. 2 A.
Use glass fiber to dip in the PMMA solution that takes a morsel, have the copper foil surface of Graphene to draw fenestral fabric in growth, the size of grid is about 1mm, and the thickness of grid lines is about 0.3mm.The sample of having drawn the PMMA pattern is placed in the air leaves standstill half an hour, treat solvent evaporates after, promptly obtain patterned PMMA film, like Fig. 2 B on the Graphene surface.Also can adopt printing or printing technique that PMMA is plotted on the Graphene sample surfaces.
PDMS adopts the SYLGARD of Dow Corning Corporation 184 silica gel external members; Said preparation comprises PDMS and crosslinking agent two parts; Operation instruction according to this product is evenly mixed the two according to the relation of mass ratio 12:1, and puts into vacuum chamber half an hour, can obtain water white PDMS liquid.
At a little PDMS liquid of the sample surfaces of above-mentioned completion Patten drawing drippage, and sample is placed on the heating station 100 degrees centigrade of heating 1 hour down, PDMS is solidified, obtain one deck PDMS protective layer, like Fig. 2 C.
The Graphene sample that is attached with PMMA and PDMS is put into liquor ferri trichloridi; Sample is because surface tension and buoyancy; Can swim in the liquid, the Copper Foil of growth Graphene will be gradually by the ferric trichloride corrosion, approximately after half an hour; Copper Foil will be obtained swimming in the Graphene sample of liquid surface by corrosion fully.
The Graphene sample of having removed Copper Foil obtains swimming in the Graphene sample of the surperficial cleaning of deionized water at last through diluting rinsing repeatedly.
The use target substrate is pulled above-mentioned Graphene sample out from deionized water, substrate is placed on the heating station to keep half an hour down at 70 degrees centigrade subsequently, removes the moisture between Graphene and the substrate, Graphene is contacted fully, like Fig. 2 D with substrate.
After the oven dry, the PDMS protective layer is thrown off from target substrate, because the cohesive force of PMMA and PDMS is stronger; Simultaneously the Graphene of PMMA and its covering also has stronger active force, and the cohesive force of PDMS and Graphene a little less than, so the Graphene of PMMA and covering thereof will be stripped from along with PDMS together; On substrate, stay at last the square Graphene figure that the surface did not cover the dot matrix dress of PMMA; Wherein the size of square is consistent with the sizing grid of the PMMA that draws before, is about 1mm, like Fig. 2 E.
Claims (5)
1. the transfer preparation method of a patterned graphene is characterized in that, comprises the steps:
(1) applies cohesive material at the Graphene sample surfaces that is grown on the catalytic metal substrate according to designed patterns;
(2) again at whole sample surface-coated one deck PDMS protective layer;
(3) sample that step (2) is obtained is immersed in the etchant solution, and the catalytic metal substrate is removed in corrosion, and the Graphene that sticks toughness material and PDMS protective layer is swum in the solution;
(4) Graphene that step (3) gained is sticked toughness material and PDMS protective layer is transferred on the target substrate;
(5) again the PDMS protective layer is peeled off from target substrate, obtained patterned Graphene.
2. according to the transfer preparation method of the said patterned graphene of claim 1, it is characterized in that: said catalytic metal is copper or nickel.
3. according to the transfer preparation method of the said patterned graphene of claim 1, it is characterized in that: said cohesive material is PMMA, polyethylene or polystyrene.
4. according to the transfer preparation method of the said patterned graphene of claim 1, it is characterized in that: in the step (1), adopt Freehandhand-drawing, printing or printing type to apply cohesive material.
5. according to the transfer preparation method of the said patterned graphene of claim 1, it is characterized in that: said etchant solution is liquor ferri trichloridi, ammonium persulfate solution, sodium peroxydisulfate solution or nitric acid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210117732.XA CN102637584B (en) | 2012-04-20 | 2012-04-20 | Transfer preparation method of patterned graphene |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210117732.XA CN102637584B (en) | 2012-04-20 | 2012-04-20 | Transfer preparation method of patterned graphene |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102637584A true CN102637584A (en) | 2012-08-15 |
| CN102637584B CN102637584B (en) | 2014-07-02 |
Family
ID=46621938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210117732.XA Expired - Fee Related CN102637584B (en) | 2012-04-20 | 2012-04-20 | Transfer preparation method of patterned graphene |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102637584B (en) |
Cited By (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102915926A (en) * | 2012-10-22 | 2013-02-06 | 西安电子科技大学 | AlN (aluminum nitride) substrate based graphene transfer and annealing method and manufactured device |
| CN103318881A (en) * | 2013-07-10 | 2013-09-25 | 合肥微晶材料科技有限公司 | Preparation method and application method of 'dunk-get' type graphene |
| CN103361068A (en) * | 2013-07-10 | 2013-10-23 | 合肥微晶材料科技有限公司 | Metal foil substrate graphene etching liquid and etching method thereof |
| CN104064504A (en) * | 2014-06-27 | 2014-09-24 | 华中科技大学 | Method using preservative film to transfer conductive film |
| CN104505148A (en) * | 2014-11-13 | 2015-04-08 | 中国科学院重庆绿色智能技术研究院 | Method for preparing flexible-substrate three-dimensional conformal graphene film |
| CN104698744A (en) * | 2015-01-30 | 2015-06-10 | 上海交通大学 | Method for graphical micro-manufacturing of curve surface film by utilizing flexible photolithographic template |
| CN104960286A (en) * | 2015-05-28 | 2015-10-07 | 东南大学 | Controllable flexible transfer method of two-dimensional materials |
| CN105589598A (en) * | 2015-12-24 | 2016-05-18 | 无锡格菲电子薄膜科技有限公司 | Manufacturing method of patterned graphene |
| CN106486344A (en) * | 2016-12-01 | 2017-03-08 | 无锡格菲电子薄膜科技有限公司 | A kind of preparation method of the graphene film of patterning |
| US9610546B2 (en) | 2014-03-12 | 2017-04-04 | Lockheed Martin Corporation | Separation membranes formed from perforated graphene and methods for use thereof |
| CN106624371A (en) * | 2016-12-29 | 2017-05-10 | 无锡格菲电子薄膜科技有限公司 | Method for forming patterned graphene on target device |
| CN107068607A (en) * | 2017-04-24 | 2017-08-18 | 西安电子科技大学 | Electrode material transfer method based on sacrifice layer |
| US9744617B2 (en) | 2014-01-31 | 2017-08-29 | Lockheed Martin Corporation | Methods for perforating multi-layer graphene through ion bombardment |
| WO2017186057A1 (en) * | 2016-04-27 | 2017-11-02 | 京东方科技集团股份有限公司 | Sealant and method for preparation thereof, display panel and method for fabrication thereof, and display device |
| US9834809B2 (en) | 2014-02-28 | 2017-12-05 | Lockheed Martin Corporation | Syringe for obtaining nano-sized materials for selective assays and related methods of use |
| US9833748B2 (en) | 2010-08-25 | 2017-12-05 | Lockheed Martin Corporation | Perforated graphene deionization or desalination |
| US9844757B2 (en) | 2014-03-12 | 2017-12-19 | Lockheed Martin Corporation | Separation membranes formed from perforated graphene and methods for use thereof |
| WO2018000983A1 (en) * | 2016-06-29 | 2018-01-04 | 京东方科技集团股份有限公司 | Touch screen, manufacturing method thereof, display device |
| US9870895B2 (en) | 2014-01-31 | 2018-01-16 | Lockheed Martin Corporation | Methods for perforating two-dimensional materials using a broad ion field |
| CN108147398A (en) * | 2017-12-28 | 2018-06-12 | 深圳大学 | In the method that sensor base surface prepares graphene layer |
| US10005038B2 (en) | 2014-09-02 | 2018-06-26 | Lockheed Martin Corporation | Hemodialysis and hemofiltration membranes based upon a two-dimensional membrane material and methods employing same |
| US10017852B2 (en) | 2016-04-14 | 2018-07-10 | Lockheed Martin Corporation | Method for treating graphene sheets for large-scale transfer using free-float method |
| WO2018161400A1 (en) * | 2017-03-09 | 2018-09-13 | 武汉华星光电技术有限公司 | Method for manufacturing electrode layer in tft substrate and method for manufacturing flexible tft substrate |
| US10118130B2 (en) | 2016-04-14 | 2018-11-06 | Lockheed Martin Corporation | Two-dimensional membrane structures having flow passages |
| CN109216483A (en) * | 2017-11-03 | 2019-01-15 | 北京纳米能源与***研究所 | Single layer MoS2Homojunction, optical detector and preparation method thereof, electronic component |
| US10201784B2 (en) | 2013-03-12 | 2019-02-12 | Lockheed Martin Corporation | Method for forming perforated graphene with uniform aperture size |
| US10203295B2 (en) | 2016-04-14 | 2019-02-12 | Lockheed Martin Corporation | Methods for in situ monitoring and control of defect formation or healing |
| US10213746B2 (en) | 2016-04-14 | 2019-02-26 | Lockheed Martin Corporation | Selective interfacial mitigation of graphene defects |
| CN109850882A (en) * | 2018-08-30 | 2019-06-07 | 中国科学院微电子研究所 | A kind of graphene electrochemistry transfer method of more support membrane auxiliary |
| US10376845B2 (en) | 2016-04-14 | 2019-08-13 | Lockheed Martin Corporation | Membranes with tunable selectivity |
| US10418143B2 (en) | 2015-08-05 | 2019-09-17 | Lockheed Martin Corporation | Perforatable sheets of graphene-based material |
| US10471199B2 (en) | 2013-06-21 | 2019-11-12 | Lockheed Martin Corporation | Graphene-based filter for isolating a substance from blood |
| US10500546B2 (en) | 2014-01-31 | 2019-12-10 | Lockheed Martin Corporation | Processes for forming composite structures with a two-dimensional material using a porous, non-sacrificial supporting layer |
| US10653824B2 (en) | 2012-05-25 | 2020-05-19 | Lockheed Martin Corporation | Two-dimensional materials and uses thereof |
| US10696554B2 (en) | 2015-08-06 | 2020-06-30 | Lockheed Martin Corporation | Nanoparticle modification and perforation of graphene |
| CN111422860A (en) * | 2020-03-02 | 2020-07-17 | 中国科学院上海微***与信息技术研究所 | Method for reversely transferring graphene |
| CN111704128A (en) * | 2020-05-27 | 2020-09-25 | 东南大学 | Two-dimensional material transfer method based on substrate with steps |
| CN111933724A (en) * | 2020-07-22 | 2020-11-13 | 中国电子科技集团公司第十三研究所 | Photodiode and preparation method thereof |
| CN111933740A (en) * | 2020-07-22 | 2020-11-13 | 中国电子科技集团公司第十三研究所 | Ultraviolet photodiode and preparation method thereof |
| US10980919B2 (en) | 2016-04-14 | 2021-04-20 | Lockheed Martin Corporation | Methods for in vivo and in vitro use of graphene and other two-dimensional materials |
| CN113088085A (en) * | 2021-03-31 | 2021-07-09 | 陕西科技大学 | Preparation method of patterned graphene film on flexible substrate |
| CN113233431A (en) * | 2021-04-30 | 2021-08-10 | 桂林电子科技大学 | Two-dimensional material film forming method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100021708A1 (en) * | 2008-04-14 | 2010-01-28 | Massachusetts Institute Of Technology | Large-Area Single- and Few-Layer Graphene on Arbitrary Substrates |
| US20110048625A1 (en) * | 2009-08-27 | 2011-03-03 | Caldwell Joshua D | METHOD FOR THE REDUCTION OF GRAPHENE FILM THICKNESS AND THE REMOVAL AND TRANSFER OF EPITAXIAL GRAPHENE FILMS FROM SiC SUBSTRATES |
| CN102082159A (en) * | 2010-10-27 | 2011-06-01 | 北京大学 | Nanoscale point light source based on graphene and preparation method thereof |
-
2012
- 2012-04-20 CN CN201210117732.XA patent/CN102637584B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100021708A1 (en) * | 2008-04-14 | 2010-01-28 | Massachusetts Institute Of Technology | Large-Area Single- and Few-Layer Graphene on Arbitrary Substrates |
| US20110048625A1 (en) * | 2009-08-27 | 2011-03-03 | Caldwell Joshua D | METHOD FOR THE REDUCTION OF GRAPHENE FILM THICKNESS AND THE REMOVAL AND TRANSFER OF EPITAXIAL GRAPHENE FILMS FROM SiC SUBSTRATES |
| CN102082159A (en) * | 2010-10-27 | 2011-06-01 | 北京大学 | Nanoscale point light source based on graphene and preparation method thereof |
Cited By (55)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9833748B2 (en) | 2010-08-25 | 2017-12-05 | Lockheed Martin Corporation | Perforated graphene deionization or desalination |
| US10653824B2 (en) | 2012-05-25 | 2020-05-19 | Lockheed Martin Corporation | Two-dimensional materials and uses thereof |
| CN102915926A (en) * | 2012-10-22 | 2013-02-06 | 西安电子科技大学 | AlN (aluminum nitride) substrate based graphene transfer and annealing method and manufactured device |
| CN102915926B (en) * | 2012-10-22 | 2015-07-29 | 西安电子科技大学 | The device of a kind of transfer method for annealing of the Graphene based on AlN substrate and manufacture |
| US10201784B2 (en) | 2013-03-12 | 2019-02-12 | Lockheed Martin Corporation | Method for forming perforated graphene with uniform aperture size |
| US10471199B2 (en) | 2013-06-21 | 2019-11-12 | Lockheed Martin Corporation | Graphene-based filter for isolating a substance from blood |
| CN103361068B (en) * | 2013-07-10 | 2015-10-21 | 合肥微晶材料科技有限公司 | A kind of Metal foil substrate graphene etching liquid and lithographic method thereof |
| CN103318881B (en) * | 2013-07-10 | 2015-04-08 | 合肥微晶材料科技有限公司 | Preparation method and application method of 'dunk-get' type graphene |
| CN103361068A (en) * | 2013-07-10 | 2013-10-23 | 合肥微晶材料科技有限公司 | Metal foil substrate graphene etching liquid and etching method thereof |
| CN103318881A (en) * | 2013-07-10 | 2013-09-25 | 合肥微晶材料科技有限公司 | Preparation method and application method of 'dunk-get' type graphene |
| US9744617B2 (en) | 2014-01-31 | 2017-08-29 | Lockheed Martin Corporation | Methods for perforating multi-layer graphene through ion bombardment |
| US9870895B2 (en) | 2014-01-31 | 2018-01-16 | Lockheed Martin Corporation | Methods for perforating two-dimensional materials using a broad ion field |
| US10500546B2 (en) | 2014-01-31 | 2019-12-10 | Lockheed Martin Corporation | Processes for forming composite structures with a two-dimensional material using a porous, non-sacrificial supporting layer |
| US9834809B2 (en) | 2014-02-28 | 2017-12-05 | Lockheed Martin Corporation | Syringe for obtaining nano-sized materials for selective assays and related methods of use |
| US9844757B2 (en) | 2014-03-12 | 2017-12-19 | Lockheed Martin Corporation | Separation membranes formed from perforated graphene and methods for use thereof |
| US9610546B2 (en) | 2014-03-12 | 2017-04-04 | Lockheed Martin Corporation | Separation membranes formed from perforated graphene and methods for use thereof |
| CN104064504A (en) * | 2014-06-27 | 2014-09-24 | 华中科技大学 | Method using preservative film to transfer conductive film |
| US10005038B2 (en) | 2014-09-02 | 2018-06-26 | Lockheed Martin Corporation | Hemodialysis and hemofiltration membranes based upon a two-dimensional membrane material and methods employing same |
| CN104505148A (en) * | 2014-11-13 | 2015-04-08 | 中国科学院重庆绿色智能技术研究院 | Method for preparing flexible-substrate three-dimensional conformal graphene film |
| CN104698744A (en) * | 2015-01-30 | 2015-06-10 | 上海交通大学 | Method for graphical micro-manufacturing of curve surface film by utilizing flexible photolithographic template |
| CN104960286B (en) * | 2015-05-28 | 2016-08-31 | 东南大学 | A kind of controlled two-dimensional material flexibility transfer method |
| CN104960286A (en) * | 2015-05-28 | 2015-10-07 | 东南大学 | Controllable flexible transfer method of two-dimensional materials |
| US10418143B2 (en) | 2015-08-05 | 2019-09-17 | Lockheed Martin Corporation | Perforatable sheets of graphene-based material |
| US10696554B2 (en) | 2015-08-06 | 2020-06-30 | Lockheed Martin Corporation | Nanoparticle modification and perforation of graphene |
| CN105589598B (en) * | 2015-12-24 | 2019-05-17 | 无锡格菲电子薄膜科技有限公司 | A kind of manufacturing method of patterned Graphene |
| CN105589598A (en) * | 2015-12-24 | 2016-05-18 | 无锡格菲电子薄膜科技有限公司 | Manufacturing method of patterned graphene |
| US10017852B2 (en) | 2016-04-14 | 2018-07-10 | Lockheed Martin Corporation | Method for treating graphene sheets for large-scale transfer using free-float method |
| US10213746B2 (en) | 2016-04-14 | 2019-02-26 | Lockheed Martin Corporation | Selective interfacial mitigation of graphene defects |
| US10118130B2 (en) | 2016-04-14 | 2018-11-06 | Lockheed Martin Corporation | Two-dimensional membrane structures having flow passages |
| US10980919B2 (en) | 2016-04-14 | 2021-04-20 | Lockheed Martin Corporation | Methods for in vivo and in vitro use of graphene and other two-dimensional materials |
| US10376845B2 (en) | 2016-04-14 | 2019-08-13 | Lockheed Martin Corporation | Membranes with tunable selectivity |
| US10981120B2 (en) | 2016-04-14 | 2021-04-20 | Lockheed Martin Corporation | Selective interfacial mitigation of graphene defects |
| US10203295B2 (en) | 2016-04-14 | 2019-02-12 | Lockheed Martin Corporation | Methods for in situ monitoring and control of defect formation or healing |
| US10196546B2 (en) | 2016-04-27 | 2019-02-05 | Boe Technology Group Co., Ltd. | Frame sealing adhesive and method for producing the same, display panel and method for manufacturing the same, and display device |
| WO2017186057A1 (en) * | 2016-04-27 | 2017-11-02 | 京东方科技集团股份有限公司 | Sealant and method for preparation thereof, display panel and method for fabrication thereof, and display device |
| WO2018000983A1 (en) * | 2016-06-29 | 2018-01-04 | 京东方科技集团股份有限公司 | Touch screen, manufacturing method thereof, display device |
| CN106486344A (en) * | 2016-12-01 | 2017-03-08 | 无锡格菲电子薄膜科技有限公司 | A kind of preparation method of the graphene film of patterning |
| CN106486344B (en) * | 2016-12-01 | 2019-06-11 | 无锡格菲电子薄膜科技有限公司 | A kind of preparation method of patterned graphene film |
| CN106624371B (en) * | 2016-12-29 | 2018-04-20 | 无锡格菲电子薄膜科技有限公司 | A kind of method that patterned graphene is formed on target devices |
| CN106624371A (en) * | 2016-12-29 | 2017-05-10 | 无锡格菲电子薄膜科技有限公司 | Method for forming patterned graphene on target device |
| WO2018161400A1 (en) * | 2017-03-09 | 2018-09-13 | 武汉华星光电技术有限公司 | Method for manufacturing electrode layer in tft substrate and method for manufacturing flexible tft substrate |
| CN107068607A (en) * | 2017-04-24 | 2017-08-18 | 西安电子科技大学 | Electrode material transfer method based on sacrifice layer |
| CN107068607B (en) * | 2017-04-24 | 2019-11-26 | 西安电子科技大学 | Electrode material transfer method based on sacrificial layer |
| CN109216483A (en) * | 2017-11-03 | 2019-01-15 | 北京纳米能源与***研究所 | Single layer MoS2Homojunction, optical detector and preparation method thereof, electronic component |
| CN108147398B (en) * | 2017-12-28 | 2021-05-18 | 深圳大学 | Method for preparing graphene layer on surface of sensor substrate |
| CN108147398A (en) * | 2017-12-28 | 2018-06-12 | 深圳大学 | In the method that sensor base surface prepares graphene layer |
| CN109850882A (en) * | 2018-08-30 | 2019-06-07 | 中国科学院微电子研究所 | A kind of graphene electrochemistry transfer method of more support membrane auxiliary |
| CN109850882B (en) * | 2018-08-30 | 2020-10-16 | 中国科学院微电子研究所 | Multi-support-film-assisted graphene electrochemical transfer method |
| CN111422860A (en) * | 2020-03-02 | 2020-07-17 | 中国科学院上海微***与信息技术研究所 | Method for reversely transferring graphene |
| CN111422860B (en) * | 2020-03-02 | 2022-11-04 | 中国科学院上海微***与信息技术研究所 | Method for reversely transferring graphene |
| CN111704128A (en) * | 2020-05-27 | 2020-09-25 | 东南大学 | Two-dimensional material transfer method based on substrate with steps |
| CN111933740A (en) * | 2020-07-22 | 2020-11-13 | 中国电子科技集团公司第十三研究所 | Ultraviolet photodiode and preparation method thereof |
| CN111933724A (en) * | 2020-07-22 | 2020-11-13 | 中国电子科技集团公司第十三研究所 | Photodiode and preparation method thereof |
| CN113088085A (en) * | 2021-03-31 | 2021-07-09 | 陕西科技大学 | Preparation method of patterned graphene film on flexible substrate |
| CN113233431A (en) * | 2021-04-30 | 2021-08-10 | 桂林电子科技大学 | Two-dimensional material film forming method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102637584B (en) | 2014-07-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102637584B (en) | Transfer preparation method of patterned graphene | |
| KR101931831B1 (en) | Graphene film transfer method, and method for manufacturing transparent conductive film | |
| CN104150476B (en) | The not damaged transfer method of process for preparing graphenes by chemical vapour deposition | |
| CN103342356B (en) | Method for transferring graphene on metal foil substrate | |
| CN103682176B (en) | The manufacture method of rigid substrate substrate and flexible display device, rigid substrate substrate | |
| CN102592964A (en) | Method for transferring graphene film to substrate | |
| CN102020271B (en) | Method of manufacturing graphene and graphene manufactured by the method | |
| CN103456900B (en) | The manufacture method of flexible display apparatus | |
| US20130149463A1 (en) | Method of manufacturing patterned graphene film | |
| CN104016340B (en) | Method for transferring graphene film | |
| CN102759467B (en) | Method for manufacturing multi-layer graphene TEM (Transverse Electric and Magnetic Field) sample | |
| CN101901640A (en) | Method for preparing flexible and transparent conductive graphene membrane | |
| CN108517555B (en) | Method for obtaining large-area high-quality flexible self-supporting monocrystalline oxide film based on Van der Waals epitaxy | |
| JP2016508891A (en) | Method and apparatus for transfer of film between substrates | |
| CN109300774B (en) | Method for processing and transferring graphene layer containing metal electrode in micron level | |
| CN102583349B (en) | Method for preparing graphene mesh | |
| CN105741980A (en) | Flexible self-support graphene conductive thin film with microstructure pattern on surface and preparation method of flexible self-support graphene conductive thin film | |
| CN103337449B (en) | Method prepared by the transplanting of silicon nanowire array and simple Devices thereof | |
| CN107428600A (en) | Single-layer graphene is transferred on flexible glass substrate | |
| CN106904605A (en) | A kind of method of the transfer Graphene based on sublimed method | |
| CN103272747B (en) | Manufacturing method and system of transparent patterning carbon nano tube conducting thin film | |
| CN104191803A (en) | Preparation method of graphene/substrate composite conducting material | |
| CN104386674B (en) | A kind of method of half photosensitive transfer Graphene | |
| CN102417175A (en) | Transfer method of carbon nano tube bundle at room temperature | |
| CN111763923A (en) | Two-dimensional material layer transfer method after preparation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140702 Termination date: 20210420 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |