CN102637582B - Method for preventing phosphosilicate glass or boron phosphosilicate glass film from absorbing water - Google Patents
Method for preventing phosphosilicate glass or boron phosphosilicate glass film from absorbing water Download PDFInfo
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- CN102637582B CN102637582B CN201210100763.4A CN201210100763A CN102637582B CN 102637582 B CN102637582 B CN 102637582B CN 201210100763 A CN201210100763 A CN 201210100763A CN 102637582 B CN102637582 B CN 102637582B
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- phosphosilicate glass
- film
- boron phosphorus
- silicate glass
- phosphorus silicate
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities
Abstract
The invention relates to the field of manufacture of semiconductors, in particular to a method for preventing phosphosilicate glass or boron phosphosilicate glass film from absorbing water. The method includes: depositing an amorphous carbon film layer on the phosphosilicate glass or boron phosphosilicate glass film, accordingly isolating reaction between the phosphosilicate glass or boron phosphosilicate glass film and external water vapor and the like and preventing the phosphosilicate glass or boron phosphosilicate glass film from being humidified by absorbing water so that the manufactured phosphosilicate glass or boron phosphosilicate glass film can be stored for a long time. Besides, the amorphous carbon film layer can be removed by common plasma ashing and cleaning with wet method when wafers with the phosphosilicate glass or boron phosphosilicate glass film are delivered, so that possibility of abandonment of the wafers can be reduced, yield of products can be increased, process cost is saved and process is simple and easy to operate.
Description
Technical field
The present invention relates to the manufacture field of semiconductor integrated circuit, particularly relate to a kind of method preventing phosphosilicate glass or the water suction of boron phosphorus silicate glass film.
Background technology
Phosphosilicate glass (phospho-silicate-glass is called for short PSG) is the SiO that one mixes phosphorus (P)
2glass.Its P mixed (is mainly Na mainly for catching moveable metal cation
+) and reduce reflux temperature.The content of general P adds more, and its reflowing result is better.
But, because the reflux temperature very high (generally at about 1000 DEG C) that PSG requires, and high-temperature process easily causes impurity concentration to spread the distortion with silicon chip again, and the content of P can affect stability and the reliability of film (film), it is more that P adds, and more easily absorbs water.Therefore there is the boron phosphorus silicate glass (boro-phospho-silicate-glass of boron-doping (B), be called for short BPSG) replace PSG, wherein the effect of B reduces reflux temperature, and the B simultaneously mixed can reduce the amount of mixing P, to reduce above-mentioned risk.
General is 400 ~ 450 DEG C at temperature conditions, by adopting SiH
4, O
2, PH
3and B
2h etc. carry out plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, be called for short PECVD) and subatmospheric chemical vapour deposition (CVD) (Sub-Atmospheric pressure Chemical VaporDeposition, abbreviation SACVD) technique prepare BPSG.Because BPSG and PSG is the same, mobility is at high temperature better, be widely used as the good interlayer dielectric of semiconductor chip surface flatness, especially use in a large number in the logic process of 0.18um ~ 0.35um, and at some silicon oxide nitride oxide semiconductor (SONOS)s (Silicon Oxide Nitride Oxide Semiconductor, be called for short SONOS) in technique, be applied in 0.13um technique; And at dynamic random access memory (Dynamic Random Access Memory, be called for short DRAM) and static random access memory (Static Random Access Memory, be called for short SRAM) in device, even use in 90nm technique.
In BPSG, when B and P respectively accounts for 4%, its reflux temperature can be down to 700 ~ 850 DEG C; Wherein, the reduction of P content can reduce to generate H after the moisture absorption in psg film
3pO
4to the corrosion of Al, and which in turn improve stepwise gradient; But, mix too many B and also can bring adverse effect, cause component defects.
Due to, the P element in BPSG or PSG film (film) is mainly with P
2o
5form exists, the phosphorus namely containing a large amount of 5 valencys, and higher doping level can cause film quality to be loosened, and the CVD processing procedure of low temperature has too many dangling bonds by H
+ion or OH-ion come saturated, make the easy moisture absorption of film and P
2o
5form corrosive H
3pO
4(P
2o
5+ H
2o → H
3pO
4); And after annealing (Anneal), due to H
+or OH-elemental release, Si-H and Si-OH dangling bonds can tail off, and the moisture absorption of film is improved, and rete is also just more stablized.
Fig. 1-2 is the phenogram of BPSG film fourier transform infrared spectrum (FTIR) before and after annealing process in background technology of the present invention; Wherein, transverse axis represents wavelength (wavenumber), and the longitudinal axis represents absorptivity (absorbance), curve a represents the spectrum after annealing, curve b represents the spectrum before annealing, and curve c represents the spectrum before annealing, and curve d represents the spectrum after annealing.As shown in Figure 1-2, at annealing (annealed) hydroxyl and P
2o
5all have a very large change, namely same film (same film) after reflow, P
2o
5peak than a lot of by force during deposition, this is because the vibration mode of OH key (hydroxyl) significantly reduces after annealing (Anneal).
Fig. 3 is that in background technology of the present invention, after BPSG/PSG film deposition, warped (warpage) changes the graph of a relation with memory time; Wherein, transverse axis represents the post-depositional time, and the longitudinal axis represents warped, and curve e represents the variation tendency of warped (warpage) with memory time of BPSG, and curve f represents warped (warpage) trend over time of PSG.As shown in Figure 3, warped (warpage) along with deposition the holding time prolongation BPSG/PSG more easily absorb water (hydroscopic), so it is very crucial that BPSG/PSG film deposits later preservation.
Fig. 4 is current BPSG/PSG process chart in background technology of the present invention; As shown in Figure 4, current control method is mainly taked: 1. for product (Product wafer), time from BPSG/PSG film deposition (dep) to annealing (Anneal) is 6 ~ 10 hours (Q time), anything is not had to do over again the way of (re-work) if exceeded this time period, only have and carry out annealing process (anneal) as early as possible, carry out next step technique as early as possible afterwards, the reduction of product yield will be caused like this.2. for control wafer (monitor wafer), because film (film) is unstable, after deposition is good, need within three hours, measure corresponding parameter (as thickness, concentration, stress etc.), if more than the film of three hours, the assessment of board performance can not be used for, can only be redeposited, the waste of control wafer will be caused like this, increase process costs.
Summary of the invention
The invention discloses a kind of method preventing phosphosilicate glass or the water suction of boron phosphorus silicate glass film, wherein, comprise the following steps:
Step S1: sedimentary phosphor silicate glass or boron phosphorus silicate glass film on a silicon substrate;
Step S2: the upper surface of phosphosilicate glass or boron phosphorus silicate glass film described in deposited amorphous plastic film covering, makes moist to prevent the water suction when preserving of phosphosilicate glass or boron phosphorus silicate glass film;
Step S3: after confirming that subsequent technique is ready to, before carrying out next step technique, remove described amorphous c film.
The above-mentioned method preventing phosphosilicate glass or the water suction of boron phosphorus silicate glass film, wherein, described silicon substrate is light monitoring wafer or product wafer.
The above-mentioned method preventing phosphosilicate glass or the water suction of boron phosphorus silicate glass film, wherein, when described silicon substrate is light monitoring wafer, after removing described amorphous c film, carries out the measurement of wafer parameters.
The above-mentioned method preventing phosphosilicate glass or the water suction of boron phosphorus silicate glass film, wherein, described wafer parameters is included as wafer thickness, concentration and stress.
The above-mentioned method preventing phosphosilicate glass or the water suction of boron phosphorus silicate glass film, wherein, when described silicon substrate is product wafer, before carrying out next step technique, carries out high temperature reflow processes to this product wafer.
The above-mentioned method preventing phosphosilicate glass or the water suction of boron phosphorus silicate glass film, wherein, in step S2, using plasma enhancing chemical vapor deposition method deposits described amorphous c film.
The above-mentioned method preventing phosphosilicate glass or the water suction of boron phosphorus silicate glass film, wherein, the thickness of described amorphous c film is 200 dust-1000 dusts.
The above-mentioned method preventing phosphosilicate glass or the water suction of boron phosphorus silicate glass film, wherein, the temperature of described plasma enhanced chemical vapor deposition technique is 300 DEG C-500 DEG C.
The above-mentioned method preventing phosphosilicate glass or the water suction of boron phosphorus silicate glass film, wherein, in step S3, using plasma cineration technics and cleaning remove described amorphous c film successively.
The above-mentioned method preventing phosphosilicate glass or the water suction of boron phosphorus silicate glass film, wherein, described cleaning is wet clean process.
In sum, owing to have employed technique scheme, the present invention proposes a kind of method preventing phosphosilicate glass or the water suction of boron phosphorus silicate glass film, by deposit one deck amorphous c film on phosphosilicate glass or boron phosphorus silicate glass film, thus the reaction of isolated phosphosilicate glass or factor such as boron phosphorus silicate glass (BPSG/PSG) film and extraneous steam etc., thus preventing BPSG/PSG film to absorb water the generation of phenomenon of making moist, the BPSG/PSG film that manufacture can be made good can be preserved for a long time; And when preparation has the wafer of BPSG/PSG film to need to carry out next step shipment, only need can remove this amorphous c film by common plasma ashing and wet-cleaned, the possibility of wafer scrap can not only be reduced, increase the yield of product and save process costs, and technique is simple to operation.
Accompanying drawing explanation
Fig. 1-2 is the phenogram of BPSG film fourier transform infrared spectrum (FTIR) before and after annealing process in background technology of the present invention;
Fig. 3 is that in background technology of the present invention, after BPSG/PSG film deposition, warped changes the graph of a relation with memory time;
Fig. 4 is current BPSG/PSG process chart in background technology of the present invention;
Fig. 5 is the process chart that the present invention prevents the method for phosphosilicate glass or the water suction of boron phosphorus silicate glass film;
Fig. 6-8 is Structure and Process schematic diagrames that the present invention prevents the method for phosphosilicate glass or the water suction of boron phosphorus silicate glass film.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is further described:
Fig. 4 is current BPSG/PSG process chart in background technology of the present invention;
Fig. 5 is the process chart that the present invention prevents the method for phosphosilicate glass or the water suction of boron phosphorus silicate glass film;
Fig. 6-8 is Structure and Process schematic diagrames that the present invention prevents the method for phosphosilicate glass or the water suction of boron phosphorus silicate glass film.
As Figure 4-8, first, sedimentary phosphor silicate glass or boron phosphorus silicate glass (BPSG/PSG) film 2 on silicon substrate (Sisub) 1; Afterwards, under the temperature conditions of 300-500 DEG C, using plasma strengthens chemical vapour deposition (CVD) (Plasma Enhanced Chemical Vapor Deposition, be called for short PECVD) technique, deposit thickness is amorphous carbon (amorphous carbon) film 3 of 200-1000A, to cover the upper surface of phosphosilicate glass or boron phosphorus silicate glass film 2; Wherein, silicon substrate 1 is product wafer (product wafer) or light monitoring wafer (monitor wafer).
Preserve in technique at follow-up wafer, because amorphous carbon has very strong stability, this amorphous c film 3 can completely cut off phosphosilicate glass or boron phosphorus silicate glass film 2 reacts with extraneous steam etc., memory time is increased, thus can effectively avoid phosphosilicate glass or boron phosphorus silicate glass film 2 to preserve due to long-time (the Q time of product wafer is greater than 6-10 hour, and the Q time of light monitoring wafer is greater than 3 hours) wafer damage caused that makes moist that absorbs water.
After determining that subsequent technique is ready to, traditional plasma ashing process and wet clean process is taked to remove this amorphous c film 3 successively, to carry out follow-up processing step.
If when silicon substrate 1 is for light monitoring wafer, after removal amorphous c film 3, the measurement of wafer parameters can be carried out, measurement as isoparametric in wafer thickness, concentration and stress.If silicon substrate 1 is product wafer, then before carrying out next step processing step, high temperature reflow processes is carried out to this product wafer.
As in the technique of 90nm DRAM, after BPSG deposition, PECVD is adopted to deposit the amorphous c film of 200 dust-1000 dust thickness at the upper surface of BPSG, wafer can be made to preserve for a long time (being greater than 10 hours), and water suction can not occur to make moist phenomenon, preparation for subsequent process steps provides the sufficient time, when subsequent process steps finishes, using plasma cineration technics (plasmaashing) and wet-cleaned (wet clean) technique this amorphous c film can be removed.
In sum, owing to have employed technique scheme, the present invention proposes a kind of method preventing phosphosilicate glass or the water suction of boron phosphorus silicate glass film, by deposit one deck amorphous c film on BPSG/PSG film, thus the reaction of the factor such as BPSG/PSG film and extraneous steam, thus preventing BPSG/PSG film to absorb water the generation of phenomenon of making moist, the BPSG/PSG film that manufacture can be made good can be preserved for a long time; And when preparation has the wafer of BPSG/PSG film to need to carry out next step shipment, only need can remove this amorphous c film by common plasma ashing and wet-cleaned, the possibility of wafer scrap can not only be reduced, increase the yield of product and save process costs, and technique is simple to operation.
By illustrating and accompanying drawing, giving the exemplary embodiments of the ad hoc structure of embodiment, based on the present invention's spirit, also can do other conversion.Although foregoing invention proposes existing preferred embodiment, but these contents are not as limitation.
For a person skilled in the art, after reading above-mentioned explanation, various changes and modifications undoubtedly will be apparent.Therefore, appending claims should regard the whole change and correction of containing true intention of the present invention and scope as.In Claims scope, the scope of any and all equivalences and content, all should think and still belong to the intent and scope of the invention.
Claims (9)
1. prevent a method for phosphosilicate glass or the water suction of boron phosphorus silicate glass film, it is characterized in that, comprise the following steps:
Step S1: sedimentary phosphor silicate glass or boron phosphorus silicate glass film on a silicon substrate;
Step S2: the upper surface of phosphosilicate glass or boron phosphorus silicate glass film described in deposited amorphous plastic film covering, makes moist to prevent the water suction when preserving of phosphosilicate glass or boron phosphorus silicate glass film;
Step S3: after confirming that subsequent technique is ready to, before carrying out next step technique, using plasma cineration technics and cleaning remove described amorphous c film successively.
2. the method preventing phosphosilicate glass or the water suction of boron phosphorus silicate glass film according to claim 1, is characterized in that, described silicon substrate is light monitoring wafer or product wafer.
3. the method preventing phosphosilicate glass or the water suction of boron phosphorus silicate glass film according to claim 2, is characterized in that, when described silicon substrate is light monitoring wafer, after removing described amorphous c film, carries out the measurement of wafer parameters.
4. the method preventing phosphosilicate glass or the water suction of boron phosphorus silicate glass film according to claim 3, it is characterized in that, described wafer parameters is included as wafer thickness, concentration and stress.
5. the method preventing phosphosilicate glass or the water suction of boron phosphorus silicate glass film according to claim 2, is characterized in that, when described silicon substrate is product wafer, before carrying out next step technique, carry out high temperature reflow processes to this product wafer.
6. according to the method preventing phosphosilicate glass or the water suction of boron phosphorus silicate glass film in claim 1-5 described in any one, it is characterized in that, in step S2, using plasma enhancing chemical vapor deposition method deposits described amorphous c film.
7. the method preventing phosphosilicate glass or the water suction of boron phosphorus silicate glass film according to claim 6, it is characterized in that, the thickness of described amorphous c film is 200 dust-1000 dusts.
8. the method preventing phosphosilicate glass or the water suction of boron phosphorus silicate glass film according to claim 7, it is characterized in that, the temperature of described plasma enhanced chemical vapor deposition technique is 300 DEG C-500 DEG C.
9. the method preventing phosphosilicate glass or the water suction of boron phosphorus silicate glass film according to claim 1, it is characterized in that, described cleaning is wet clean process.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210100763.4A CN102637582B (en) | 2012-04-09 | 2012-04-09 | Method for preventing phosphosilicate glass or boron phosphosilicate glass film from absorbing water |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210100763.4A CN102637582B (en) | 2012-04-09 | 2012-04-09 | Method for preventing phosphosilicate glass or boron phosphosilicate glass film from absorbing water |
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| Publication Number | Publication Date |
|---|---|
| CN102637582A CN102637582A (en) | 2012-08-15 |
| CN102637582B true CN102637582B (en) | 2015-03-11 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4210431A (en) * | 1978-12-15 | 1980-07-01 | Corning Glass Works | Method for making vitreous carbon coatings on glass fibers |
| CN1437191A (en) * | 2002-02-04 | 2003-08-20 | 富士通株式会社 | Tetrahedral amorphous carbon film and producing method thereof |
| US6844623B1 (en) * | 2000-05-16 | 2005-01-18 | Sandia Corporation | Temporary coatings for protection of microelectronic devices during packaging |
| CN102187432A (en) * | 2008-10-14 | 2011-09-14 | 应用材料股份有限公司 | Method for depositing conformal amorphous carbon film by plasma-enhanced chemical vapor deposition (pecvd) |
-
2012
- 2012-04-09 CN CN201210100763.4A patent/CN102637582B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4210431A (en) * | 1978-12-15 | 1980-07-01 | Corning Glass Works | Method for making vitreous carbon coatings on glass fibers |
| US6844623B1 (en) * | 2000-05-16 | 2005-01-18 | Sandia Corporation | Temporary coatings for protection of microelectronic devices during packaging |
| CN1437191A (en) * | 2002-02-04 | 2003-08-20 | 富士通株式会社 | Tetrahedral amorphous carbon film and producing method thereof |
| CN102187432A (en) * | 2008-10-14 | 2011-09-14 | 应用材料股份有限公司 | Method for depositing conformal amorphous carbon film by plasma-enhanced chemical vapor deposition (pecvd) |
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| CN102637582A (en) | 2012-08-15 |
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