CN102629628B - 一种tft阵列基板及其制造方法和液晶显示器 - Google Patents

一种tft阵列基板及其制造方法和液晶显示器 Download PDF

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CN102629628B
CN102629628B CN201110294950.6A CN201110294950A CN102629628B CN 102629628 B CN102629628 B CN 102629628B CN 201110294950 A CN201110294950 A CN 201110294950A CN 102629628 B CN102629628 B CN 102629628B
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CN102629628A (zh
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刘翔
薛建设
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BOE Technology Group Co Ltd
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Abstract

本发明的实施例提供一种TFT阵列基板及其制造方法和液晶显示器，涉及液晶面板制造领域，在防止半导体有源层受到污染的同时，减少了构图工序，提高了生产效率，降低了生产成本。TFT阵列基板包括：基板，基板上形成的栅线、栅极、栅绝缘层和半导体有源层，具有金属氧化物区域的金属阻挡层，金属阻挡层上形成有源极和漏极，金属阻挡层的金属氧化物区域位于所述源极、漏极之间，基板和所述源极、漏极上形成有保护层和与所述漏极连接的像素电极。本发明实施例用于制造TFT阵列基板。

Description

一种TFT阵列基板及其制造方法和液晶显示器
技术领域
本发明涉及液晶面板制造领域，尤其涉及一种薄膜晶体管液晶显示器(TFT-LCD)的TFT阵列基板及其制造方法和液晶显示器。
背景技术
TFT-LCD(ThinFilmTransistor-LiquidCrystalDisplay，薄膜场效应晶体管液晶显示器)是利用设置在液晶层上电场强度的变化，改变液晶分子的旋转的程度，从而控制透光的强弱来显示图像的。一般来讲，一块完整的液晶显示面板必须具有背光模块、偏光片、彩膜基板和TFT阵列基板，以及加在彩膜基板和TFT阵列基板之间的液晶分子层。
近年来TFT-LCD获得了飞速的发展，随着TFT-LCD尺寸的不断增大、分辨率的不断提高，为了提高显示质量，采用了更高频率的驱动电路，TFT-LCD的充电时间更短，因此需要高迁移率的半导体层材料。此外，图像信号的延迟也成为制约大尺寸、高分辨率TFT-LCD显示效果的关键因素之一，因此一般TFT阵列基板使用低电阻金属材料Cu作为数据线。
现有制作TFT阵列基板的工艺是在基板上依次形成栅线、栅绝缘层和半导体有源层，为防止金属材料在制作源、漏极时对半导体有源层产生污染，在半导体有源层上再形成一具有过孔的保护层，在该保护层上形成通过过孔与半导体有源层连接的源极、漏极。这样一来，制作该保护层时增加了一道构图工序，从而降低了TFT阵列基板的生产效率，提高了生产成本。
发明内容
本发明提供一种TFT阵列基板及其制造方法和液晶显示器，在防止半导体有源层受到污染的同时，减少了构图工序，提高了生产效率，降低了生产成本。
为达到上述目的，本发明的实施例采用如下技术方案：
一方面，提供一种TFT阵列基板，包括：
基板；
所述基板上形成有栅线、栅极、栅绝缘层和半导体有源层；
所述半导体有源层上形成有与所述半导体有源层同面积的金属阻挡层；
所述金属阻挡层上形成有源极和漏极，其中，所述金属阻挡层位于所述源极和漏极之间的区域为经过氧化工艺处理后所得的金属氧化物区域，使所述源极、漏极相互绝缘；
在所述基板和所述源极、漏极上形成有保护层和与所述漏极连接的像素电极。
一方面，提供一种液晶显示器，所述液晶显示器包括上述的TFT阵列基板。
一方面，提供一种TFT阵列基板制造方法，包括：
在基板上形成栅线和栅极；
在所述基板和所述栅线、栅极上形成栅绝缘层；
在所述栅绝缘层上涂布有源层；
在所述有源层上涂布金属阻挡层；
在所述金属阻挡层上涂布数据金属层，利用灰色调掩摸板或半透式掩摸板对所述数据金属层、金属阻挡层和有源层进行一次构图工艺处理，得到数据线、源极、漏极和半导体有源层，以及与所述半导体有源层同面积的金属阻挡层；
对所述源极、漏极之间区域的所述金属阻挡层进行氧化工艺处理，使所述源极、漏极相互绝缘；
在所述基板和所述数据线、源极、漏极上形成保护层；
在所述保护层上形成与所述漏极连接的像素电极。
本发明实施例提供的TFT阵列基板及其制造方法和液晶显示器，在基板的源极、漏极与半导体有源层之间增加一层金属阻挡层，再对源极、漏极之间区域的该金属阻挡层进行氧化工艺处理。这样，既可以防止源极、漏极形成过程中对半导体有源层的污染，又无需单独对该金属阻挡层进行构图工艺处理，因此相对现有技术而言，减少了构图工序，提高了生产效率，降低了生产成本。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例提供的TFT阵列基板的结构示意图；
图2为本发明实施例提供的TFT阵列基板制造方法的流程示意图；
图3为本发明实施例提供的TFT阵列基板制造方法过程中的基板结构示意图一；
图4为本发明实施例提供的TFT阵列基板制造方法过程中的基板结构示意图二；
图5为本发明实施例提供的TFT阵列基板制造方法过程中的基板结构示意图三；
图6为本发明实施例提供的TFT阵列基板制造方法过程中的基板结构示意图四；
图7为本发明实施例提供的TFT阵列基板制造方法过程中的基板结构示意图五；
图8为本发明实施例提供的TFT阵列基板制造方法过程中的基板结构示意图六；
图9为本发明实施例提供的TFT阵列基板制造方法过程中的基板结构示意图七；
图10为本发明实施例提供的TFT阵列基板制造方法过程中的基板结构示意图八；
图11为本发明实施例提供的TFT阵列基板制造方法过程中的基板结构示意图九；
图12为本发明实施例提供的TFT阵列基板制造方法过程中的基板结构示意图十；
图13为本发明实施例提供的TFT阵列基板制造方法过程中的基板结构示意图十一；
图14为本发明实施例提供的TFT阵列基板制造方法过程中的基板结构示意图十二；
图15为本发明实施例提供的TFT阵列基板制造方法过程中的基板结构示意图十三。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
本发明实施例提供的TFT阵列基板，如图1所示，包括：
基板11；基板11上形成有栅线(图中未表示)、栅极12、栅绝缘层13和半导体有源层14；半导体有源层14上形成有与半导体有源层14同面积的具有金属氧化物区域151的金属阻挡层15；金属阻挡层15上形成有源极161和漏极162；其中，金属氧化区域151位于源极161、漏极162之间，并使该源极161、漏极162相互绝缘；在该基板11以及源极161、漏极162上形成有保护层18；在保护层18上形成有与漏极162相连接的像素电极19。
在本实施例中，金属阻挡层15所选取的金属材料可以为钛金属。源极161、漏极162所选取的金属材料可以为金属铜。
需要说明的是，在本发明的实施例中，金属阻挡层15选取的是钛金属，但本发明实施例并不限于此，其他的金属也可以，只要能够发生氧化反应形成金属氧化物即可。
本发明实施例提供的TFT阵列基板，在基板的源极、漏极与半导体有源层之间增加一层金属阻挡层，再对源极、漏极之间区域的该金属阻挡层进行氧化工艺处理。这样，既可以防止源极、漏极形成过程中对半导体有源层的污染，又无需单独对该金属阻挡层进行构图工艺处理，因此相对现有技术而言，减少了构图工序，提高了生产效率，降低了生产成本。
下面通过图2至图15对本发明实施例提供的TFT阵列基板制造方法进行说明。如图2所示，该方法步骤包括：
S201、在基板11上形成栅线和栅极12。
示例性的，如图3所示，在玻璃基板11上采用激射或蒸发的方法依次沉积上厚度为的栅金属膜。栅金属膜可以选用铬、钨、铜、钛、钽、钼、等金属或合金，由多层金属组成的栅金属层也能满足需要。通过构图工艺处理形成栅极12和栅线(图3中未表示)。
S202、在基板11和栅线、栅极12上形成栅绝缘层13。
示例性的，如图4所示，在基板11和栅极12上通过PECVD(PlasmaEnhancedChemicalVaporDeposition，等离子体增强化学气相沉积法)方法连续沉积厚度为的栅绝缘层13，栅绝缘层13通常采用的材料为氧化物、氮化物或者氧氮化合物，对应的反应气体可以为氢化硅，氨气，氮气或二氯氢硅，氨气，氮气。
S203、在栅绝缘层13上涂布有源层14。
示例性的，如图5所示，通过溅射方法连续沉积厚度为金属氧化物有源层14，金属氧化物有源层14在经过构图工艺后形成为半导体有源层。
S204、在有源层14上涂布金属阻挡层15。
示例性的，如图6所示，在有源层14上通过溅射方法连续沉积厚度为金属阻挡层15，该金属阻挡层15可以为钛金属。
S205、在金属阻挡层15上涂布数据金属层16。
示例性的，如图7所示，在金属阻挡层15上通过溅射方法连续沉积厚度金属铜16。
S206，在数据金属层16上涂布光刻胶17，得到图8所示的结构。
S207、如图9所示，利用灰色调掩摸板或半透式掩摸板20对光刻胶17进行曝光，显影后形成光刻胶完全保留区域171、光刻胶半保留区域172和光刻胶完全去除区域；其中，在像素单元中，光刻胶完全保留区域171对应数据线、源极、漏极，光刻胶半保留区域172对应源极、漏极之间的区域。
S208、利用刻蚀工艺去除掉光刻胶完全去除区域的数据金属层16、金属阻挡层15和有源层14，得到如图10所示的结构。
S209、利用等离子体灰化工艺去除掉光刻胶半保留区域172的光刻胶，得到如图11所示的结构。
S210、利用刻蚀工艺去除掉光刻胶半保留区域171的数据金属层16，得到如图12所示的结构。
S211、对源极、漏极之间区域151的金属阻挡层进行氧化工艺处理，具体可采用离子注入或者氧的等离子体处理等方式，使金属阻挡层转化成金属氧化物，从而使源极161、漏极162相互绝缘，得到如图13所示的结构。
在本发明所有实施例中，金属阻挡层15选取的是钛金属，但本发明实施例中并不限于此，其他的金属也可以，只要能够发生氧化反应形成金属氧化物即可。
S212、剥离掉光刻胶完全保留区域171的光刻胶，得到数据线、源极161、漏极162和半导体有源层14，以及与半导体有源层14同面积的金属阻挡层15，得到如图14所示的结构。
需要说明的是，在本实施例中，将在基板上整板涂布的称为有源层，将构图工艺处理后得到TFT区域的称为半导体有源层，该有源层和半导体有源层材料相同。
S213、在基板11上形成保护层18，并在该保护层18上形成过孔181，得到如图15所示的结构。
S214、在保护层18上形成与漏极162连接的像素电极19。
本发明实施例提供的TFT阵列基板的制造方法，在基板的源极、漏极与半导体有源层之间增加一层金属阻挡层，再对源极、漏极之间区域的该金属阻挡层进行氧化工艺处理。这样，既可以防止源极、漏极形成过程中对半导体有源层的污染，又无需单独对该金属阻挡层进行构图工艺处理，因此相对现有技术而言，减少了构图工序，提高了生产效率，降低了生产成本。
本发明实施例还提供了一种液晶显示器，包括上述任一TFT阵列基板以及为该基板提供背光的背光源。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。

Claims (8)

1.一种TFT阵列基板，其特征在于，包括：
基板；
所述基板上形成有栅线、栅极、栅绝缘层和半导体有源层；
所述半导体有源层上形成有与所述半导体有源层同面积的金属阻挡层；
所述金属阻挡层上形成有源极和漏极，其中，所述金属阻挡层位于所述源极和漏极之间的区域为经过氧化工艺处理后所得的金属氧化物区域，使所述源极、漏极相互绝缘；
在所述基板和所述源极、漏极上形成有保护层和与所述漏极连接的像素电极；
其中，所述有源层、金属阻挡层以及源极和漏极通过一次构图工艺形成；所述金属阻挡层包括金属氧化物区域以及对应源极和漏极的区域，所述金属阻挡层在对应源极的区域与源极图案一致，在对应漏极的区域与漏极图案一致；所述有源层与所述金属阻挡层的图案一致。
2.根据权利要求1所述的TFT阵列基板，其特征在于，所述金属阻挡层的材料为钛金属。
3.根据权利要求1所述的TFT阵列基板，其特征在于，所述源极、漏极的材料包括铜。
4.一种液晶显示器，其特征在于，所述液晶显示器包括所述权利要求1至3任意一个所述的TFT阵列基板。
5.一种TFT阵列基板制造方法，其特征在于，包括：
在基板上形成栅线和栅极；
在所述基板和所述栅线、栅极上形成栅绝缘层；
在所述栅绝缘层上涂布有源层；
在所述有源层上涂布金属阻挡层；
在所述金属阻挡层上涂布数据金属层，利用灰色调掩摸板或半透式掩摸板对所述数据金属层、金属阻挡层和有源层进行一次构图工艺处理，得到数据线、源极、漏极和半导体有源层，以及与所述半导体有源层同面积的金属阻挡层；
对所述源极、漏极之间区域的所述金属阻挡层进行氧化工艺处理，使所述源极、漏极相互绝缘；
在所述基板和所述数据线、源极、漏极上形成保护层；
在所述保护层上形成与所述漏极连接的像素电极。
6.根据权利要求5所述的方法，其特征在于，所述利用灰色调掩摸板或半透式掩摸板对所述数据金属层、金属阻挡层和有源层进行一次构图工艺处理，得到数据线、源极、漏极和半导体有源层，以及与所述半导体有源层同面积的金属阻挡层；对所述源极、漏极之间区域的所述金属阻挡层进行氧化工艺处理，使所述源极、漏极相互绝缘包括：
在所述数据金属层上涂布光刻胶；
利用灰色调掩摸板或半透式掩摸板对所述光刻胶进行曝光，显影后形成光刻胶完全保留区域、光刻胶半保留区域和光刻胶完全去除区域；其中，在像素单元中，所述光刻胶完全保留区域对应数据线、源极、漏极，所述光刻胶半保留区域对应所述源极、漏极之间的区域；
利用刻蚀工艺去除掉所述光刻胶完全去除区域的数据金属层、金属阻挡层和有源层；
利用等离子体灰化工艺去除掉所述光刻胶半保留区域的光刻胶；
利用刻蚀工艺去除掉所述光刻胶半保留区域的数据金属层；
对所述源极、漏极之间区域的所述金属阻挡层进行氧化工艺处理，使所述源极、漏极相互绝缘；
剥离掉所述光刻胶完全保留区域的光刻胶，得到数据线、源极、漏极和半导体有源层，以及与所述半导体有源层同面积的金属阻挡层。
7.根据权利要求5或6所述的方法，其特征在于，所述金属阻挡层为的材料为钛金属。
8.根据权利要求5或6所述的方法，其特征在于，所述数据金属层的材料包括铜。
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