CN102610744B - Data storage device and manufacturing method thereof - Google Patents
Data storage device and manufacturing method thereof Download PDFInfo
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- CN102610744B CN102610744B CN201210073398.2A CN201210073398A CN102610744B CN 102610744 B CN102610744 B CN 102610744B CN 201210073398 A CN201210073398 A CN 201210073398A CN 102610744 B CN102610744 B CN 102610744B
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- bismuth ferrite
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Abstract
The invention discloses a data storage device with higher stability and low electric leakage, and a manufacturing method thereof. The method comprises the following steps of: forming a transistor; and forming a capacitor, wherein the method for forming the capacitor comprises the following steps of: forming a substrate, forming a lower electrode on the substrate, forming a conducting layer on the lower electrode, forming a bismuth titanate layer on the conducting layer and forming an upper electrode on the bismuth titanate layer, wherein the conducting layer is formed by a material having a perovskite structure, and the bismuth titanate layer is formed by a sputtering method or a chemical vapor deposition method.
Description
Technical field
The present invention relates to a kind of data storage device and manufacture method thereof.
Background technology
Existing data storage device is generally divided into RAM and ROM.The access speed of RAM is high, but the contents lost of storage after power-off.The storage of ROM is not subject to current affects, but access speed is low.And along with the research of various materials, people have worked out ferroelectric data storage device, magnetic data memory device and phase change data memory device etc.Data storage device unit in data storage device generally comprises transistor and capacitor, and general capacitor comprises bottom electrode, dielectric layer and top electrode.
The appearance of multiple iron material has been injected one vigor to data storage device, multiple iron material is synthetic by ferroelectric material and antiferromagnet, two-way interaction produces magnetoelectric effect, therefore this material has ferroelectric and ferromagnetic property concurrently, can, for the manufacture of the dielectric layer in capacitor, therefore there are the potentiality of making data storage device.At present comparatively popular is the research of data storage device that bismuth ferrite, mangaic acid bismuth and mangaic acid yttrium are made.But in the data storage device made from bismuth ferrite in prior art, because fault of construction causes the ferroelectric properties of bismuth ferrite low, the poor performance of the data storage device of therefore making, is unsuitable for practical application.And to improve the performance of bismuth ferrite data storage device, and need to use bismuth ferrite in manufacturing the process of data storage device, maintain its ferroelectric properties, make its capacitor of making there is high stability and low leakage property.
Summary of the invention
The invention discloses a kind of data storage device and manufacture method thereof with higher stability and low leakage property.
The manufacture method of data storage device of the present invention comprises the steps: to form transistor; Form capacitor; The method that wherein forms capacitor comprises the steps: to form substrate; On substrate, form bottom electrode; On bottom electrode, form conductive layer; On conductive layer, form bismuth ferrite layer; On bismuth ferrite layer, form top electrode, wherein with the material of perovskite structure, make conductive layer, adopt sputtering method or chemical vapour deposition technique to form bismuth ferrite layer.
In a preferred embodiment, the step that adopts sputtering method to form this bismuth ferrite layer is:
By Bi
2o
3and Fe
2o
3after mixing, form mixture,
This mixture is formed to bismuth ferrite target,
At background pressure, be 10
-6~ 10
-4during holder, pass into oxygen and argon gas, operating pressure is 20 ~ 40 holders, and sputter is carried out in base plate heating to 200 ~ 500 degree Celsius;
In a further advantageous embodiment, the step that adopts chemical vapour deposition technique to form bismuth ferrite layer is:
Form precursor, described precursor preferably includes ferrite, bismuthates and solvent, and the molar ratio of this bismuthates and this ferrite is preferably between 1: 1 and 2: 1;
This precursor is coated on this conductive layer,
Be heated to uniform temperature after annealing and process, the temperature of described annealing in process is preferably between 350 ~ 700 degrees Celsius.
Manufacture method of the present invention is owing to adopting sputtering method or chemical vapour deposition technique to prepare bismuth ferrite layer, and obtained preferred preparation parameter by great many of experiments, and in conjunction with making conductive layer with the material of perovskite structure, thereby obtain having the data storage device of excellent properties.
Wherein, preferably, the material of perovskite structure is nickel acid lanthanum or plumbic acid barium.
The invention also discloses a kind of data storage device, it comprises capacitor and transistor, this capacitor comprises substrate, is positioned at the bottom electrode on this substrate, be positioned at conductive layer on this bottom electrode, be positioned at the bismuth ferrite layer on this conductive layer and be positioned at the top electrode on this bismuth ferrite layer, this conductive layer is the material with perovskite structure, preferably nickel acid lanthanum or plumbic acid barium; Bismuth ferrite layer forms by sputtering method or chemical vapour deposition technique.
Accompanying drawing explanation
Fig. 1 is the structural representation of capacitor in data storage device of the present invention.
Embodiment
In order to make those skilled in the art more clearly understand technical scheme of the present invention, below in conjunction with accompanying drawing, its embodiment is described.
Data storage device of the present invention comprises transistor and capacitor, wherein as shown in Figure 1, capacitor comprises substrate 1, be positioned at bottom electrode 2 on substrate 1, be formed at the conductive layer 3 on bottom electrode 2, is formed at the bismuth ferrite layer 4 on conductive layer 3 and is positioned at the top electrode 5 on bismuth ferrite layer 4.
In one embodiment, substrate 1 has substrate 11, is positioned at diffusion impervious layer 12 in substrate 11, is positioned at the adhesion layer 13 on diffusion impervious layer 12.
Diffusion impervious layer 12 can prevent that substrate 11 is heated and spreads in manufacture process.Diffusion impervious layer 12 is preferably silicon dioxide, aluminium nitride, titanium nitride or tantalum nitride.
In another embodiment, between bismuth ferrite layer 4 and top electrode 5, there is oxide electrode layer (not shown).This oxide electrode layer is preferably the material identical with conductive layer 3 and forms.This oxide electrode layer can improve the overall performance of capacitor.
The manufacture method of data storage device of the present invention comprises the steps:
Form transistor;
Form capacitor, transistor AND gate capacitor electrode is connected; Wherein forming capacitor comprises the steps:
On substrate 1, form bottom electrode 2; On bottom electrode 2, form conductive layer 3; On conductive layer 3, form bismuth ferrite layer 4; On bismuth ferrite layer 4, form top electrode 5, wherein with the material of perovskite structure, make conductive layer 3.The preferred nickel acid lanthanum of material or the plumbic acid barium of perovskite structure.
In one embodiment, when forming substrate 1, first form substrate 11, then in substrate 11, form diffusion impervious layer 12, on diffusion impervious layer 12, form adhesion layer 13.
The material of substrate 11 is preferably silicon chip.Diffusion impervious layer 12 is preferably silicon dioxide, aluminium nitride, titanium nitride or tantalum nitride.The material of adhesion layer 13 is preferably titanium dioxide, titanium or tantalum.
Preferably adopt sputtering method, electron gun to steam the method for crossing and form bottom electrode 2 and top electrode 5.The material of bottom electrode 2 and top electrode 5 is preferably metal, more preferably gold, silver, platinum, iridium or ruthenium.
In another embodiment, on bismuth ferrite layer 4, form oxide electrode layer (not shown), then on oxide electrode layer, form top electrode 5.This oxide electrode layer is preferably the material identical with conductive layer 3 and forms.This oxide electrode layer can improve the overall performance of capacitor.
Preferably adopt sputtering method to form conductive layer 3 and oxide electrode layer.
Can adopt sputtering method and chemical vapour deposition (CVD) to form bismuth ferrite layer 4.
In one embodiment, adopt sputtering method to form bismuth ferrite layer.Wherein, first Bi203 and Fe203 are mixed, form mixture, formed bismuth ferrite (BixFeO3,1≤x≤2) target, then utilize sputtering method, background pressure is 10
-6~ 10
-4during holder, be preferably 10
-5during holder, pass into oxygen and argon gas, operating pressure is 20 ~ 40 holders, and sputter is carried out in base plate heating to 200 ~ 500 degree Celsius, is preferably heated to 350 degrees Celsius, thereby on conductive layer 3, forms bismuth ferrite layer 4.
In another embodiment, adopt chemical vapour deposition technique to form bismuth ferrite layer.Wherein, first form precursor, this precursor is coated on conductive layer 3, be heated to uniform temperature after annealing and process, thereby on conductive layer 3, form bismuth ferrite layer 4.The temperature of annealing in process is preferably between 350 ~ 700 degrees Celsius, more preferably between 350 ~ 550 degrees Celsius.Wherein, precursor preferably includes ferrite, bismuthates and solvent.Ferrite is preferably pentanedione acid iron, ferric nitrate or ferric acetate.Bismuthates is preferably pentanedione acid bismuth, bismuth nitrate or bismuth acetate.Solvent is preferably the mixture of organic acid and alcohols, and this organic acid is preferably propionic acid or acetic acid, and this alcohols is preferably 2-methyl cellosolve or cellosolvo.The molar ratio of bismuthates and ferrite is preferably between 1: 1 and 2: 1, more preferably between 1: 1 and 1.2: 1.
The manufacture method of data storage device of the present invention has more than been described, wherein by sputtering method and chemical vapour deposition technique, prepare the bismuth ferrite layer in data storage device, and obtained preferred preparation parameter by great many of experiments, the conductive layer of simultaneously making in conjunction with perovskite structural material, thus obtain having the data storage device of excellent properties.
Above embodiment is only for describing the technical scheme of data storage device of the present invention and manufacture method thereof; be not used in restriction the present invention; those skilled in the art are not in departing from the scope of the present invention; can obtain various modification and combination, so protection scope of the present invention is as the criterion with claims.
Claims (2)
1. a manufacture method for data storage device, the method comprises the steps:
Form transistor;
Form capacitor, transistor AND gate capacitor electrode is connected;
Wherein, forming described capacitor comprises the steps:
Form substrate,
On substrate, form bottom electrode,
On bottom electrode, form conductive layer,
On conductive layer, form bismuth ferrite layer,
On bismuth ferrite layer, form top electrode; It is characterized in that:
Conductive layer is nickel acid lanthanum or plumbic acid barium;
Adopt chemical vapour deposition technique to form bismuth ferrite layer;
The step that adopts chemical vapour deposition technique to form bismuth ferrite layer is:
Form precursor, described precursor comprises ferrite, bismuthates and solvent, and the molar ratio of this bismuthates and this ferrite is between 1:1 and 2:1;
This precursor is coated on this conductive layer,
Be heated to uniform temperature after annealing and process, the temperature of described annealing in process is between 350～700 degrees Celsius.
2. a manufacture method for data storage device, the method comprises the steps:
Form transistor;
Form capacitor, transistor AND gate capacitor electrode is connected;
Wherein, forming described capacitor comprises the steps:
Form substrate,
On substrate, form bottom electrode,
On bottom electrode, form conductive layer,
On conductive layer, form bismuth ferrite layer,
On bismuth ferrite layer, form top electrode; It is characterized in that:
Conductive layer is nickel acid lanthanum or plumbic acid barium;
Adopt sputtering method to form bismuth ferrite layer;
Wherein, the step that adopts sputtering method to form this bismuth ferrite layer is:
By Bi
2o
3and Fe
2o
3after mixing, form mixture,
This mixture is formed to bismuth ferrite target,
At background pressure, be 10
-6～10
-4during holder, pass into oxygen and argon gas, operating pressure is 20～40 holders, and sputter is carried out in base plate heating to 200～500 degree Celsius.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210073398.2A CN102610744B (en) | 2012-03-20 | 2012-03-20 | Data storage device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210073398.2A CN102610744B (en) | 2012-03-20 | 2012-03-20 | Data storage device and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN102610744A CN102610744A (en) | 2012-07-25 |
| CN102610744B true CN102610744B (en) | 2014-04-09 |
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ID=46527993
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210073398.2A Expired - Fee Related CN102610744B (en) | 2012-03-20 | 2012-03-20 | Data storage device and manufacturing method thereof |
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Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100527420C (en) * | 2007-10-12 | 2009-08-12 | 清华大学 | Bismuth ferric/bismuth titanate laminated construction electric capacity and method for preparing the same |
| US7867786B2 (en) * | 2007-12-18 | 2011-01-11 | Intel Corporation | Ferroelectric layer with domains stabilized by strain |
| CN101429642A (en) * | 2008-12-05 | 2009-05-13 | 华中科技大学 | BiFeO3 target and film production method |
| CN101872768B (en) * | 2010-06-11 | 2012-01-11 | 清华大学 | Ferroelectric dynamic random storage based on bismuth based storage materials and preparation method thereof |
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