CN102544365A - Resistance random access memory and manufacturing method thereof - Google Patents
Resistance random access memory and manufacturing method thereof Download PDFInfo
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- CN102544365A CN102544365A CN2012100168126A CN201210016812A CN102544365A CN 102544365 A CN102544365 A CN 102544365A CN 2012100168126 A CN2012100168126 A CN 2012100168126A CN 201210016812 A CN201210016812 A CN 201210016812A CN 102544365 A CN102544365 A CN 102544365A
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Abstract
The invention relates to a resistance random access memory and a manufacturing method thereof. The resistance random access memory comprises a plurality of resistance random access units; each resistance random access unit comprises a substrate (101), and a bottom electrode (102), a resistance random layer (103) and a top electrode (104) with a needle-point-shaped bulge part (1041) which are sequentially deposited on the substrate (101). The top electrode with the bulge part etched into a needle point shape is adopted, so that the electric field is concentrated near the tip of the electrode, a conductive channel is generated near a needle point, and the on and off positions of the conductive channel can be relatively fixed; and therefore, the working voltage of resistance random access memory can be reduced, and the consistency of distribution of high and low resistance of the resistance random access memory can be improved.
Description
Technical field
The invention belongs to semiconductor integrated circuit and manufacturing technology field thereof, be specifically related to a kind of resistance-variable storing device and manufacturing approach thereof.
Background technology
So-called " resistance-variable storing device (RRAM) ", be a kind of utilize resistance variations realize high-speed (＜5ns), low operating voltage (＜1V) work, and have high storage density, be easy to the novel non-volatility memorizer of advantage such as integrated.The RRAM device generally has the structure of electrode-insulator-electrode, promptly between two-layer electrode, adds one deck and has the dielectric thin-film material that resistance becomes characteristic, and it generally is transition metal oxide that these resistances become materials, and common have NiO, a TiO
2, HfO
2, ZrO
2, WO
3, Ta
2O
5Or the like.The working method of RRAM device is that the resistance value of utilizing applied voltage control resistance to become material is changed between high low resistance state, to realize writing and wiping of data.
Traditional resistance-variable storing device result is typical sandwich structure: add one deck resistance change material layer at the parallel capacitance plate.The formation of conductive channel can be in the change resistance layer more like this.
According to physical principle, electric field can be concentrated at the tip of conductor.And the characteristic of resistance-variable storing device is mainly determined by the conductive channel of electric field controls.When using needlepoint electrode, can control the characteristic of resistance-variable storing device better.
Summary of the invention
The technical problem that (one) will solve
The purpose of this invention is to provide a kind of resistance-variable storing device and manufacturing approach thereof, make the break-make position relative fixed of conductive channel, the operating voltage that reduces resistance-variable storing device also improves its high low resistance Uniformity of Distribution.
(2) technical scheme
In order to solve the problems of the technologies described above, the present invention provides a kind of resistance-variable storing device, comprises a plurality of resistance-change memories unit; Each resistance-change memory unit comprises substrate, hearth electrode, the change resistance layer of deposition and have the top electrode of tip-like protuberance successively on substrate.
Preferably, said substrate is but is not limited to: silicon substrate, glass substrate or flexible substrate.
Preferably, said hearth electrode is but is not limited to: platinum, titanium, copper, aluminium, titanium nitride, nickel, tungsten or doped silicon.
Preferably, saidly power on very but be not limited to: platinum, titanium, copper, aluminium, titanium nitride, nickel, tungsten or doped silicon.
Preferably, said change resistance layer is but is not limited to: hafnium oxide, titanium oxide, zirconia, zinc oxide, tungsten oxide or tantalum oxide or their combination.
Preferably, the thickness of said change resistance layer is 1nm-1000nm.
The present invention also provides a kind of resistance-variable storing device manufacturing approach, comprises step:
S1: on substrate, use the deposition process depositing conductive material, and carry out photoetching and etching formation hearth electrode;
S2: on the substrate that is not covered and on the hearth electrode,, and carry out planarization, form change resistance layer with the metal oxide materials of the direct depositing metal medium of oxides of deposition process or depositing metal and one or more layers mixing of annealing formation in oxygen by hearth electrode;
S3: on change resistance layer, use photoetching and anisotropic etch process to form the groove of tip-like;
S4: in said groove, use the deposition process depositing conductive material, the metal electrode of polishing then, the electrode of formation tip-like;
S5: using the deposition process depositing conductive material on the change resistance layer and on the electrode of said tip-like and carrying out photoetching and etching formation top electrode.
Preferably, said deposition process comprises physical vapor deposition (PVD), chemical vapor deposition (CVD) and ald (ALD).
Preferably, the groove of said tip-like comprises conical socket.
Preferably, the thickness of said change resistance layer is 1nm-1000nm.
(3) beneficial effect
The present invention uses the top electrode of the protuberance with the tip-like of being etched into that electric field is concentrated near the eletrode tip; Thereby conductive channel is produced near needle point; And make and can reduce the break-make position relative fixed of conductive channel the operating voltage of resistance-variable storing device like this and improve its high low resistance Uniformity of Distribution.
Description of drawings
Fig. 1 is the resistance-change memory cellular construction sketch map among the present invention;
Fig. 2 is a resistance variation memory structure schematic cross-section of the present invention;
Fig. 3 is the flow chart of resistance-variable storing device manufacturing approach of the present invention;
Fig. 4 is for forming the sectional view of hearth electrode and change resistance layer in the resistance-variable storing device manufacturing approach of the present invention;
Fig. 5 is etching change resistance layer in the resistance-variable storing device manufacturing approach of the present invention and the sectional view that forms top electrode.
Embodiment
Below in conjunction with accompanying drawing and embodiment, specific embodiments of the invention describes in further detail.Following examples are used to explain the present invention, but are not restriction scopes of the present invention.
Shown in Fig. 1-2, resistance-variable storing device of the present invention comprises a plurality of resistance-change memories unit; Each resistance-change memory unit comprises substrate 101, hearth electrode 102, the change resistance layer 103 of deposition and have the top electrode 104 of tip-like protuberance 1041 successively on substrate 101.
Said substrate 101 is preferably silicon substrate, also can be glass or some flexible substrate.Said hearth electrode 102 is electric conducting materials such as platinum, titanium, copper, aluminium, titanium nitride, nickel, tungsten, doped silicon with top electrode 104.Said change resistance layer 103 can be 1nm-1000nm for metal oxide materials such as hafnium oxide, titanium oxide, zirconia, zinc oxide, tungsten oxide, tantalum oxide or their combination, thickness.
As shown in Figure 3, resistance-variable storing device manufacturing approach of the present invention comprises step: S1: on substrate, use the deposition process depositing conductive material, and carry out photoetching and etching formation hearth electrode; S2: on the substrate that is not covered and on the hearth electrode,, and carry out planarization, form change resistance layer with the metal oxide materials of the direct depositing metal medium of oxides of deposition process or depositing metal and one or more layers mixing of annealing formation in oxygen by hearth electrode; S3: on change resistance layer, use photoetching and anisotropic etch process to form the groove of tip-like; S4: in said groove, use the deposition process depositing conductive material, the metal electrode of polishing then, the electrode of formation tip-like; S5: using the deposition process depositing conductive material on the change resistance layer and on the electrode of said tip-like and carrying out photoetching and etching formation top electrode.
One practical implementation of the manufacture method of said resistance-variable storing device for example shown in Fig. 4-5, may further comprise the steps:
With reference to Fig. 4, the resistance-variable storing device unit generally forms on silicon chip substrate 1.
On silicon chip substrate 1; Use electric conducting materials such as physical vapor deposition (PVD), chemical vapor deposition (CVD) or ald (ALD) deposit platinum, titanium, copper, aluminium, titanium nitride, nickel, tungsten, doped silicon, and carry out photoetching and etching formation cross section hearth electrode 2 as shown in Figure 4.
On the silicon chip substrate 1 that is not covered and on the hearth electrode 2 by hearth electrode; With physical vapor deposition (PVD), chemical vapor deposition (CVD) or ald (ALD) directly depositing metal medium of oxides or depositing metal and in oxygen annealing (annealing temperature can be from 200 degrees centigrade to 1500 degrees centigrade; Actual temp is relevant with material) form the metal oxide materials such as hafnium oxide, titanium oxide, zirconia, zinc oxide, tungsten oxide, tantalum oxide of one or more layers mixing; Thickness can be 1-1000nm; And carry out planarization, form change resistance layer 3.
With reference to Fig. 5; On change resistance layer 3, use photoetching and anisotropic etch process to form conical socket 4 as shown in the figure; After making the aperture figure by lithography; Using etching agent can be that the methods such as wet etching or plasma etching of nitric acid, organic acid compound are carried out etching to change resistance layer, and etch period is relevant with reaction rate and change resistance layer thickness.
On change resistance layer 3; Use electric conducting materials such as physical vapor deposition (PVD), chemical vapor deposition (CVD) or ald (ALD) deposit platinum, titanium, copper, aluminium, titanium nitride, nickel, tungsten, doped silicon; Use Damascus technics (CMP) polishing metal electrode then, form needlepoint electrode 4 as shown in the figure.
On the change resistance layer 3 with needlepoint electrode 4 on use physical vapor deposition (PVD) deposit titanium, copper, aluminium, etc. electric conducting material and carry out photoetching and etching forms the cross section top electrode with needlepoint electrode 45 as shown in the figure.
The above only is a preferred implementation of the present invention; Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from know-why of the present invention; Can also make some improvement and replacement, these improvement and replacement also should be regarded as protection scope of the present invention.
Claims (10)
1. a resistance-variable storing device is characterized in that, comprises a plurality of resistance-change memories unit; Each resistance-change memory unit comprises substrate (101), hearth electrode (102), the change resistance layer (103) of deposition and have the top electrode (104) of tip-like protuberance (1041) successively on substrate (101).
2. resistance-variable storing device as claimed in claim 1 is characterized in that, said substrate (101) is but is not limited to: silicon substrate, glass substrate or flexible substrate.
3. resistance-variable storing device as claimed in claim 1 is characterized in that, said hearth electrode (102) is but is not limited to: platinum, titanium, copper, aluminium, titanium nitride, nickel, tungsten or doped silicon.
4. resistance-variable storing device as claimed in claim 1 is characterized in that, said top electrode (104) is but is not limited to: platinum, titanium, copper, aluminium, titanium nitride, nickel, tungsten or doped silicon.
5. resistance-variable storing device as claimed in claim 1 is characterized in that, said change resistance layer (103) is but is not limited to: hafnium oxide, titanium oxide, zirconia, zinc oxide, tungsten oxide or tantalum oxide or their combination.
6. resistance-variable storing device as claimed in claim 1 is characterized in that, the thickness of said change resistance layer (103) is 1nm-1000nm.
7. a resistance-variable storing device manufacturing approach is characterized in that, comprises step:
S1: on substrate, use the deposition process depositing conductive material, and carry out photoetching and etching formation hearth electrode;
S2: on the substrate that is not covered and on the hearth electrode,, and carry out planarization, form change resistance layer with the metal oxide materials of the direct depositing metal medium of oxides of deposition process or depositing metal and one or more layers mixing of annealing formation in oxygen by hearth electrode;
S3: on change resistance layer, use photoetching and anisotropic etch process to form the groove of tip-like;
S4: in said groove, use the deposition process depositing conductive material, the metal electrode of polishing then, the electrode of formation tip-like;
S5: using the deposition process depositing conductive material on the change resistance layer and on the electrode of said tip-like and carrying out photoetching and etching formation top electrode.
8. method as claimed in claim 7 is characterized in that, said deposition process comprises physical vapor deposition (PVD), chemical vapor deposition (CVD) and ald (ALD).
9. method as claimed in claim 7 is characterized in that the groove of said tip-like comprises conical socket.
10. method as claimed in claim 7 is characterized in that, the thickness of said change resistance layer is 1nm-1000nm.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103579498A (en) * | 2012-08-02 | 2014-02-12 | 旺宏电子股份有限公司 | Switching device and operation method thereof and storage array |
| CN103928610A (en) * | 2014-04-01 | 2014-07-16 | 清华大学 | Floating gate type resistance change storage unit structure and operation method thereof |
| CN105390612A (en) * | 2015-12-03 | 2016-03-09 | 中国科学院半导体研究所 | Preparation method for phase change memory based on tapered substrate |
| CN106057647A (en) * | 2016-07-07 | 2016-10-26 | 浙江水晶光电科技股份有限公司 | Sapphire processing method |
| CN111146341A (en) * | 2020-01-02 | 2020-05-12 | 集美大学 | Preparation method of resistive random access memory with space limitation effect |
| CN111223987A (en) * | 2020-03-06 | 2020-06-02 | 厦门半导体工业技术研发有限公司 | Resistive random access memory and method for manufacturing resistive random access memory |
| CN111564556A (en) * | 2020-05-22 | 2020-08-21 | 北京大学 | Pyramid-shaped resistive random access memory and preparation method thereof |
| CN112018235A (en) * | 2020-07-24 | 2020-12-01 | 厦门半导体工业技术研发有限公司 | Semiconductor device and method for manufacturing semiconductor device |
| CN113088912A (en) * | 2021-04-05 | 2021-07-09 | 大连理工大学 | Silicon-doped magnetron sputtering process for improving reliability of TaOx-based resistive random access memory |
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| CN101488555A (en) * | 2009-02-10 | 2009-07-22 | 中国科学院上海微***与信息技术研究所 | Manufacturing method for low power consumption phase changing memory |
| US7671355B2 (en) * | 2008-03-24 | 2010-03-02 | United Microelectronics Corp. | Method of fabricating a phase change memory and phase change memory |
| US7867814B2 (en) * | 2006-01-18 | 2011-01-11 | Fujitsu Limited | Resistance memory element and method of manufacturing the same |
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| US7867814B2 (en) * | 2006-01-18 | 2011-01-11 | Fujitsu Limited | Resistance memory element and method of manufacturing the same |
| US7671355B2 (en) * | 2008-03-24 | 2010-03-02 | United Microelectronics Corp. | Method of fabricating a phase change memory and phase change memory |
| CN101488555A (en) * | 2009-02-10 | 2009-07-22 | 中国科学院上海微***与信息技术研究所 | Manufacturing method for low power consumption phase changing memory |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103579498A (en) * | 2012-08-02 | 2014-02-12 | 旺宏电子股份有限公司 | Switching device and operation method thereof and storage array |
| CN103928610A (en) * | 2014-04-01 | 2014-07-16 | 清华大学 | Floating gate type resistance change storage unit structure and operation method thereof |
| CN103928610B (en) * | 2014-04-01 | 2016-08-10 | 清华大学 | Floating gate type resistance transformation memory unit and operational approach thereof |
| CN105390612A (en) * | 2015-12-03 | 2016-03-09 | 中国科学院半导体研究所 | Preparation method for phase change memory based on tapered substrate |
| CN106057647A (en) * | 2016-07-07 | 2016-10-26 | 浙江水晶光电科技股份有限公司 | Sapphire processing method |
| CN111146341A (en) * | 2020-01-02 | 2020-05-12 | 集美大学 | Preparation method of resistive random access memory with space limitation effect |
| CN111223987A (en) * | 2020-03-06 | 2020-06-02 | 厦门半导体工业技术研发有限公司 | Resistive random access memory and method for manufacturing resistive random access memory |
| CN111564556A (en) * | 2020-05-22 | 2020-08-21 | 北京大学 | Pyramid-shaped resistive random access memory and preparation method thereof |
| CN112018235A (en) * | 2020-07-24 | 2020-12-01 | 厦门半导体工业技术研发有限公司 | Semiconductor device and method for manufacturing semiconductor device |
| CN113088912A (en) * | 2021-04-05 | 2021-07-09 | 大连理工大学 | Silicon-doped magnetron sputtering process for improving reliability of TaOx-based resistive random access memory |
| CN113088912B (en) * | 2021-04-05 | 2021-12-07 | 大连理工大学 | Silicon-doped magnetron sputtering process for improving reliability of TaOx-based resistive random access memory |
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Application publication date: 20120704 |