CN102610711B - Method for manufacturing LED chip - Google Patents
Method for manufacturing LED chip Download PDFInfo
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- CN102610711B CN102610711B CN201110329555.7A CN201110329555A CN102610711B CN 102610711 B CN102610711 B CN 102610711B CN 201110329555 A CN201110329555 A CN 201110329555A CN 102610711 B CN102610711 B CN 102610711B
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- led chip
- motherboard
- reflectance coating
- light
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- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 230000011218 segmentation Effects 0.000 claims abstract description 19
- 230000001678 irradiating effect Effects 0.000 claims abstract description 15
- 238000000576 coating method Methods 0.000 claims description 52
- 239000011248 coating agent Substances 0.000 claims description 50
- 239000010980 sapphire Substances 0.000 claims description 17
- 229910052594 sapphire Inorganic materials 0.000 claims description 17
- 238000002310 reflectometry Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 24
- 239000004065 semiconductor Substances 0.000 description 8
- 238000002679 ablation Methods 0.000 description 7
- 238000003754 machining Methods 0.000 description 7
- 238000000926 separation method Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 238000000608 laser ablation Methods 0.000 description 4
- 208000037656 Respiratory Sounds Diseases 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000985 reflectance spectrum Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 210000001138 tear Anatomy 0.000 description 1
- 230000005068 transpiration Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
- Led Devices (AREA)
Abstract
The present invention provides a method for manufacturing an LED chip. In the method for manufacturing an LED chip of the invention, when the segmentation starting point is formed by the laser illuminated from the back surface, and there is no need to remove the reflection film along the predetermined dividing line in advance. The method for manufacturing an LED chip comprises the steps: irradiating a laser beam L on a motherboard (1) along a predetermined dividing line so as to form a segmentation starting point A for each LED element body (2), wherein the front surface (1a) of the translucent substrate (1) is formed with a plurality of LED element bodies (2) arranged in a pattern and the back surface (1b) of the translucent substrate (1) is formed with a reflection film (3). In the manufacturing method, the reflection film(3) is formed at the back surface (1b), and the laser beam L directly illuminates on the back of the motherboard from the back surface (1b) and transmitting the reflection film (3) to apply lacer processing for the motherboard (1). The reflection film (3) comprises following characters: reflecting the wavelength coverage of the emitting light from the LED element body (2) and the fluorescent of the fluorescent material, and transmitting the wave length light of the laser beam L illuminated on the predetermined dividing line.
Description
Technical field
The present invention relates to a kind of manufacture method of LED chip, this LED chip has following structure: on the interarea (as face side) of the side of light-transmitting substrate, to form the LED element producing and send light, and another interarea (as rear side) upper formed to have this is sent the reflectance coating that light reflects this character.
Background technology
For being configured to be formed on shaped like chips sapphire substrate the LED chip comprising the LED element main body of III nitride semiconductor, such as can the formal product of blue series light-emitting diode (LED).
Recently, utilize following LED chip, it is in order to improve the acquisition efficiency sending light from LED chip, metallic reflective coating is formed in the rear side sending the permeable light-transmitting substrate of light (sapphire substrate etc.), not only effectively utilize and send light from the direct outgoing of LED element main body, and effectively make use of temporarily incide in substrate and after being reflected by the metallic reflective coating of rear side again through substrate outgoing send light (with reference to patent documentation 1).
Fig. 6 represents the cross-sectional configuration figure forming the GaN LED of the typical case of the LED chip of reflectance coating in the rear side of light-transmitting substrate.
First interarea (surface) of sapphire substrate 10 is formed semiconductor lamination structure, and this semiconductor lamination structure comprises following two regions: in a region, lamination GaN resilient coating 12, n-type GaN layer 13, N-shaped AlGaN layer 14, the luminescent layer 15 comprising GaInN, p-type AlGaN layer 16 and p-type GaN layer 17 successively; In another region, the some of N-shaped AlGaN layer 14, luminescent layer 15, p-type AlGaN layer 16, p-type GaN layer 17 removes through etching, till a part for n-type GaN layer 13 is exposed.At the outer peripheral face of this semiconductor lamination structure, except electrode forms part, form SiO
2film 18 is as insulating protective film.And, p-type GaN layer 17 is formed light transmission p-type electrode 19 (Au film), n-type GaN layer 13 is formed n-type electrode 20 (Ti/Al/Au film).
Second interarea (rear side) of sapphire substrate 10 forms reflectance coating 11.Reflectance coating 11 uses the material wavelength sending light carrying out light emitting layer 15 to good reflection characteristic, specifically, such as, forms layer of Au film, thus, will send light to sapphire substrate 10 lateral reflection for what pass from the back side.
In addition, in reflectance coating 11, consider the characteristics of luminescence and the material cost of LED element, except Au film, also use Al film or dielectric multilayer film as the material of reflectance coating.That is, according to kind and the thickness of the semi-conducting material of LED element main body, emission wavelength region (luminescent spectrum) is different, therefore, may correspond to the material that the reflection characteristic of choice for use to emission wavelength is good in element and LED (commodity).Such as, when utilize be coated on the fluorescent light beam of the fluorescent material of component periphery time, also consider this impact and selection material.Specifically, if White LED (comprises the White LED of fluorescent material and blue led, or comprise the White LED of RGB3 wavelength fluorescent material and violet source), then sometimes use the dielectric multilayer film of the good reflectivity in the visible wavelength i.e. wavelength region may of about 350nm ~ 800nm.On the other hand, when paying the utmost attention to material cost, Al film can be used.
The LED chip that rear side forms reflectance coating is through that following manufacturing step manufactures.That is, the sapphire substrate of wafer-like is used as motherboard, first, first interarea (surface) of motherboard forms LED element main body with cancellate pattern, then, after grinding back surface to required thickness, form reflectance coating (element forming step) at second interarea (back side) of motherboard.After this, in order to split for each LED element main body, sapphire substrate is divided into shaped like chips thus take out (chip separation step) as LED chip (product).
Herein, be described about being divided into the chip separation of each LED chip to process from motherboard.Generally speaking, in the manufacturing step of LED chip, also the same with other semiconductor products, when motherboard being divided into each chip, enforcement utilizes cutter (dicer, dicer), the machining of diamond scribe (diamond scriber) etc., or the segmentation implemented to utilize any one laser processing of irradiating laser light beam and carry out.
Wherein, when utilizing the machinery line processing using the machining tool such as cutter or diamond scribe to split motherboard, because sapphire is much harder than glass etc. fragile material, so machining tool easily weares and teares, and on the divisional plane of processing except required crackle (crack) the also easy generation chip (chipping) that product can be caused bad.
On the other hand, when utilizing the contour output pulse laser (pulsewidth 10 of YAG laser
-9~ 10
-7second) laser processing when splitting motherboard, adopt known techniques and laser ablation (LaserAblation) or Multiphoton Absorbtion to split.That is, laser beam is converged near substrate surface or substrate inside, make produce ablation near substrate surface and form groove, or utilize Multiphoton Absorbtion and form the rotten portion of processing in substrate inside, thus these processing parts are made to become segmentation starting point (with reference to patent documentation 2, patent documentation 3) for disconnecting.
But, when utilizing laser to add man-hour to hard brittle material and sapphire, in any one situation in ablation, Multiphoton Absorbtion, all need to make irradiation energy higher than irradiation energy glass etc. being added to man-hour.As a result, carry out when utilizing ablation adding man-hour, the groove width of formation broadens.When portion is gone bad in the processing arranging substrate inside by means of Multiphoton Absorbtion, rotten position also broadens, and the surface roughness of divisional plane that rotten position is formed is thicker, may not obtain the divisional plane with good precision.
Therefore, propose to use pulsewidth to be 10
-10pulsewidth (is 10 by second following ultra-short pulse laser below
-10second following pulse laser is called " ultra-short pulse laser ") new laser processing (also referred to as BI method in this following specification) (with reference to patent documentation 4).Therefore, use Nd:YAG laser (wavelength 1064nm), adjustment focus makes it penetrate, and converges in the near surface of sapphire substrate with the ultra-short pulse laser making to have extremely short pulsewidth and high power density.Laser beam now near focal point beyond do not absorbed by baseplate material (sapphire), but cause Multiphoton Absorbtion on focal point, thus moment and produce melting, distillation (the small ablation of local) partly.And, in the scope of the position, top layer of substrate to surface, form fine crack.That is, in conventional ablation, nearly all energy that the laser beam irradiated produces is all spent by the melting of baseplate material, transpiration, for the formation of large ablation hole (aperture is about 8 μm), and in new laser processing (BI method), only some is spent by the formation of small molten trace (aperture that aperture is about 1 μm) for the energy of irradiating laser, and remaining energy then expends as the impulsive force forming fine crack.Dissolve trace as described in being formed dispersedly as bored a hole along predetermined cut-off rule, thus, form the easily separated region be formed by connecting with small crackle between adjacent dissolving trace, thus can along this Region Segmentation substrate.
[look-ahead technique document]
[patent documentation]
[patent documentation 1] Japanese Patent Laid-Open 10-308532 publication
[patent documentation 2] Japanese Patent Laid-Open 11-177137 publication
[patent documentation 3] Japanese Patent Laid-Open 2004-268309 publication
[patent documentation 4] Japanese Patent Laid-Open 2005-271563 publication
Summary of the invention
[inventing problem to be solved]
In chip separation step in LED manufactures, the new laser processing (BI method) of the ultra-short pulse laser that can use Laser ablation, utilize the laser processing of Multiphoton Absorbtion, utilize, to this, illustrates above.
But, when cutting LED chip when motherboard segmentation rear side being formed reflectance coating, if for utilizing laser processing mentioned above to split, then because there is reflectance coating in rear side, therefore laser beam can be caused to be reflected or absorbed, thus become the obstacle in processing.
Light-struck a kind of dividing method is swashed as utilization, can not from rear side but from the face side irradiating laser forming LED element main body, but, the luminescence of the laser beam irradiated can affect LED element main body equally, produce the problem causing the luminous efficiency of LED element self to decline, therefore, from the view point of maintenance luminous efficiency, wish from rear side irradiating laser.
And, in current LED manufacturing step, from the view point of this practicality of material cost, reflectance coating uses Al film, and from more paying attention to this viewpoint of acquisition efficiency sending light compared with material cost, have studied the use of the materials such as Au film more excellent for the reflection characteristic of emission wavelength compared with Al film or dielectric multilayer film, but do not go out to send consideration reflectance coating preferably any film from the viewpoint of chip separation step.
Therefore, when for be configured to motherboard that side overleaf forms the reflectance coatings such as Al film to form segmentation starting point from rear side irradiating laser time, first, with band shape removing (stripping) reflectance coating, motherboard is exposed along predetermined cut-off rule, then, from the rear side of motherboard to exposed portion irradiating laser light beam.
Now, need along predetermined cut-off rule utilizes the pattern formed by photoetching process (photolithography) to carry out peeling off or for remove reflectance coating illuminate condition (from hereinafter described irradiate different for the formation of the laser splitting starting point) carry out for removing reflectance coating laser ablation, in any one situation, needs are the step of clathrate removing (stripping) reflectance coating along predetermined cut-off rule all in addition, thus become the essential factor causing machining period to increase.
Therefore, the object of the present invention is to provide the manufacture method of a kind of LED, wherein when the motherboard back side being formed to reflectance coating forms segmentation starting point from rear side irradiating laser, without the need to other along predetermined cut-off rule removing reflectance coating in advance.
[technological means of dealing with problems]
In order to reach in the manufacture method of LED chip of the present invention of described object, comprise and along predetermined cut-off rule irradiating laser light beam segmentation starting point for being divided into each LED element main body formed for motherboard, in this motherboard, multiple LED element main body is formed with pattern in the face side of light-transmitting substrate, and the position comprised on predetermined cut-off rule, side forms reflectance coating overleaf, and described manufacture method comprises following formation.
That is, side forms reflectance coating overleaf, and, through the mode shining directly into substrate back after reflectance coating, laser processing is carried out to substrate from rear side to make laser beam, described reflectance coating has following character: wave-length coverage (preferred and then be the wave-length coverage of fluorescent light beam from the fluorescent material) reflection sending light LED element main body sent, and make the wavelength light of the laser beam be radiated on predetermined cut-off rule through.
Herein, light-transmitting substrate also can be sapphire substrate.
In addition, also can be, the reflectivity of reflectance coating in the visible region of 400nm ~ 700nm is more than 90%, is more than 50% in the transmitance of the region of ultra-red of more than 900nm.
Specifically, reflectance coating also can be formed by dielectric multilayer film.
In addition, as laser beam, the pulse laser of the 1064nm that Nd:YAG laser produces can be irradiated.
And then, as pulse laser, also pulsewidth can be shorter than 10
-10the ultra-short pulse laser of second irradiates dispersedly along predetermined cut-off rule thus forms segmentation starting point.
Herein, so-called " irradiating dispersedly " refers to the irradiation across interval as described below, namely, new laser processing (BI method) is utilized to irradiate dispersedly across distance, thus, form small melting trace (aperture is the aperture of about 1 μm) across interval, but the fine crack formed between adjacent melting trace is connected with each other.That is, formed with melting trace and fine crack continuous print mode, therefore, the mode constantly moved ahead with crackle carries out induction to process.
As mentioned above, as perforation, form described dissolving trace along predetermined cut-off rule dispersedly, thus, formed with the easily separated region that fine crack is connected between adjacent dissolving trace, thus substrate can along this Region Segmentation.
[effect of invention]
According to the manufacture method of LED chip of the present invention, as being formed in the optical characteristics making the reflectance coating sending the rear side of the permeability substrate of light transmission of LED element have, there is following character: the light of the wavelength region may of LED element main body and fluorescent material can be reflected, and make the wavelength light of the laser beam be radiated on predetermined cut-off rule through, thus, when along predetermined cut-off rule irradiating laser, if carry out irradiating from rear side, laser beam can through reflectance coating direct irradiation on substrate.
That is, make laser beam irradiation on substrate by removing reflectance coating in advance before, but overleaf side be provided with reflectance coating state under irradiating laser time, laser beam also can arrive substrate back, can carry out the laser processing identical with during non reflecting film in fact.
Thus, in the manufacture of LED chip with backside reflection film, without the need to the step along predetermined cut-off rule removing reflectance coating, thus machining period can be reduced.
Accompanying drawing explanation
Fig. 1 (a), (b) represent to form the graphic of the state of LED element main body in the face side of motherboard.
Fig. 2 (a), (b) represent to form the graphic of the state of reflectance coating in the rear side of the motherboard forming LED element main body.
Fig. 3 is the graphic of the desirable reflectance spectrum representing reflectance coating.
Fig. 4 represents to utilize laser to irradiate the graphic of machining state when motherboard being divided into each LED chip.
Fig. 5 represents along segmentation starting point to carry out the graphic of the state of disconnection process.
Fig. 6 is the sectional view of an example of the structure representing LED element main body.
[explanation of symbol]
A focal position (segmentation starting point)
L laser beam
1 light-transmitting substrate (sapphire substrate)
1a face side
1b rear side
2 LED element main bodys
3 reflectance coatings
4 laser (Nd:YAG laser)
5 disconnect rod
6a, 6b support stick
Embodiment
Below, to use the LED chip of III nitride semiconductor, according to the graphic manufacturing step describing LED chip of the present invention successively in detail.The manufacture method of LED chip of the present invention mainly comprises element forming step and these two steps of chip separation step.
(element forming step)
In element forming step, form multiple LED element main body in the face side (the first interarea side) of motherboard with pattern, and side (the second interarea side) forms reflectance coating overleaf.
Fig. 1 represents to form the graphic of the state of LED element main body in the face side of motherboard, and Fig. 1 (a) is vertical view (plane graph of face side), and Fig. 1 (b) is front view.Motherboard 1 comprises the sapphire substrate of wafer shape, and surperficial 1a (the first interarea) is formed with multiple LED element main bodys 2 regularly arranged in length and breadth in the mode forming square lattice with pattern.Each LED element main body 2 has the element structure shown in Fig. 6, and is formed by known semiconductor fabrication process.
And be provided with gap between adjacent element body 2, described gap becomes predetermined cut-off rule when splitting for each LED element main body.
Sapphire as motherboard 1 is the material wavelength region may (350nm ~ 800nm) of LED element main body 2 luminescence to light transmission.In addition, as long as have the material of light transmission for the emission wavelength region of LED element main body 2, then the material beyond sapphire substrate also can be used to be used as substrate.When LED element main body 2 be not white light-emitting diode but monochrome light emission diode time, as long as there is light transmission for corresponding monochromatic emission wavelength not for whole visible region.
Fig. 2 represents to form the graphic of the state of reflectance coating in the rear side of the motherboard 1 forming LED element main body 2, and Fig. 2 (a) is upward view (plane graph of rear side), and Fig. 2 (b) is front view.Reflectance coating 3 is formed at the whole rear side 1b of motherboard 1.
As reflectance coating 3, can use to have and optionally reflect sending light and making the material of wavelength light through this character of the laser beam be radiated on predetermined cut-off rule of LED element main body 2.As laser beam, usually use wavelength light and the infrared laser (YAG laser, YVO laser etc.) of more than 900nm, therefore can use the infrared wavelength region of more than 900nm through reflecting material.
Specifically, preferably use following reflectance coating, its such as by the light of the wavelength region may of 400nm ~ 700nm with more than 90% reflective, and make the wavelength light (1064nm) of Nd:YAG laser with more than 50% transmitance through.
Fig. 3 is the graphic of the desirable reflectance spectrum representing reflectance coating 3.
Reflectance coating close to described characteristic can be formed by dielectric multilayer film.
(chip separation step)
Then, the motherboard forming LED element main body 2 and reflectance coating 3 is divided into each LED chip.
Fig. 4 represents to utilize laser to irradiate the graphic of machining state when motherboard being divided into each LED chip.
Nd:YAG pulse laser is used as laser 4, on wavelength 1064nm, pulsewidth 20 psec, pulse energy 0.1 μ J ~ 50 μ J, repetition rate 10KHz ~ 200KHz, predetermined cut-off rule direction sweep speed 50mm/ second ~ 3000mm/ second condition under, irradiate ultrashort laser light beam from 1b side, the back side.In addition, as sweep speed, take into account repetition rate, and the interval of last irradiation position (irradiation spacing) is 3 μm ~ 20 μm.
Further, the lens optical system (not shown) built-in by laser 4 adjusts focus, converges in than the position A of substrate back side 1b slightly inside substrate (segmentation starting point) to make the focal position of depth direction.
If irradiating laser in this way, then laser beam L can play a role through reflectance coating 3 directly arrives the focal position of motherboard 1, move by making motherboard 1 on the one hand and process on the one hand, the interval of 3 μm ~ 20 μm can form aperture dispersedly, fine crack is formed between adjacent Kong Yukong, whereby, the processing line (line line) as segmentation starting point is formed.Repeat identical process along all cancellate predetermined cut-off rules, thus form the segmentation starting point for being divided into each LED element main body.
Fig. 5 represents to carry out the graphic of the state of disconnection process for forming the motherboard 1 splitting starting point.
Disconnection rod 5 is made to aim at the position P1 of the position face side in opposite directions formed with segmentation starting point A, and, make support stick 6a, 6b overleaf side aim at split starting point A phase from and be positioned at position P2, P3 of its left and right sides, thus apply bending moment with 3 point-supported states, disconnect along predetermined cut-off rule thus.Then, perform identical disconnection process along all segmentation starting points, may be partitioned into each LED chip thus.
Therefore, according to the present invention, after formation reflectance coating 3, reflectance coating 3 can not be peeled off along predetermined cut-off rule, but at once laser processing be carried out to motherboard self.
In described execution mode, be utilize to irradiate ultra-short pulse laser to carry out chip separation, but also can adopt the ablation of routine or utilize the processing of Multiphoton Absorbtion.In these situations, can not peel off along reservation cut-off rule the reflectance coating being formed in rear side, but carry out laser processing at once.
[industrial usability]
The present invention can be used to manufacture substrate back and forms the LED chip of reflectance coating.
Claims (4)
1. the manufacture method of a LED chip, it is characterized in that: comprise for motherboard along predetermined cut-off rule irradiating laser light beam thus the step of segmentation starting point formed for being divided into each LED element main body, in this motherboard, multiple LED element main body is formed with pattern in the face side of light-transmitting substrate, and the position comprised on predetermined cut-off rule, side forms reflectance coating overleaf, in the manufacture method of this LED chip
Side forms dielectric multilayer film as reflectance coating overleaf, and the reflectivity of described dielectric multilayer film in the visible region of wavelength 400nm ~ 700nm is more than 90%, and is more than 50% in the transmitance of the region of ultra-red of more than wavelength 900nm, and
To make to carry out laser processing through the mode of reflectance coating direct irradiation on substrate back to substrate from rear side as the wavelength light of more than the 900nm of described laser beam and infrared laser.
2. the manufacture method of LED chip as claimed in claim 1, wherein light-transmitting substrate is sapphire substrate.
3. the manufacture method of LED chip as claimed in claim 1 or 2, wherein irradiates the pulse laser of the wavelength 1064nm that Nd: YAG laser produces as described infrared laser.
4. the manufacture method of LED chip as claimed in claim 3, wherein as described pulse laser, irradiates pulsewidth dispersedly along predetermined cut-off rule and is shorter than 10
-10the ultra-short pulse laser of second.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011012547A JP5548143B2 (en) | 2011-01-25 | 2011-01-25 | LED chip manufacturing method |
| JP2011-012547 | 2011-01-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102610711A CN102610711A (en) | 2012-07-25 |
| CN102610711B true CN102610711B (en) | 2015-04-08 |
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ID=46527963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110329555.7A Expired - Fee Related CN102610711B (en) | 2011-01-25 | 2011-10-24 | Method for manufacturing LED chip |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5548143B2 (en) |
| KR (1) | KR101390115B1 (en) |
| CN (1) | CN102610711B (en) |
| TW (1) | TWI447964B (en) |
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| JP5658043B2 (en) * | 2011-01-07 | 2015-01-21 | 株式会社ディスコ | Split method |
| JP2012238746A (en) * | 2011-05-12 | 2012-12-06 | Disco Abrasive Syst Ltd | Division method of optical device wafer |
| JP6423135B2 (en) * | 2012-11-29 | 2018-11-14 | 三星ダイヤモンド工業株式会社 | Method for dividing a substrate with a pattern |
| TWI483802B (en) * | 2012-12-14 | 2015-05-11 | Ind Tech Res Inst | Laser machining apparatus and method thereof |
| CN103934567A (en) * | 2013-01-21 | 2014-07-23 | 均豪精密工业股份有限公司 | Laser machining system and method thereof |
| JP6405556B2 (en) * | 2013-07-31 | 2018-10-17 | リンテック株式会社 | Protective film forming film, protective film forming sheet and inspection method |
| JP6241174B2 (en) * | 2013-09-25 | 2017-12-06 | 三星ダイヤモンド工業株式会社 | Laser processing apparatus and processing condition setting method for patterned substrate |
| KR101756767B1 (en) | 2014-01-22 | 2017-07-12 | 린텍 가부시키가이샤 | Protective membrane forming film, protective membrane forming sheet, compound sheet for forming protective membrane, and product manufacturing method |
| JP6453773B2 (en) * | 2014-01-22 | 2019-01-16 | リンテック株式会社 | Protective film forming film, protective film forming sheet, protective film forming composite sheet and inspection method |
| JP6562014B2 (en) * | 2017-02-20 | 2019-08-21 | 日亜化学工業株式会社 | Method for manufacturing light emitting device |
| JP6228343B1 (en) * | 2017-06-20 | 2017-11-08 | リンテック株式会社 | Protective film forming film, protective film forming sheet and inspection method |
| JP6401364B2 (en) * | 2017-10-12 | 2018-10-10 | リンテック株式会社 | Composite sheet for protective film formation and laser printing method |
| JP2018026597A (en) * | 2017-11-16 | 2018-02-15 | ローム株式会社 | Light-emitting device and light-emitting device package |
| KR102152007B1 (en) * | 2020-03-18 | 2020-09-04 | 주식회사 탑 엔지니어링 | Method and apparatus for cutting substrate |
| CN113695748B (en) * | 2021-08-23 | 2022-10-25 | 西安交通大学 | Rapid preparation method of sharkskin surface structure based on spatial light modulator |
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| CN100471609C (en) * | 2000-09-13 | 2009-03-25 | 浜松光子学株式会社 | Laser processing method and laser processing apparatus |
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| JP3769872B2 (en) * | 1997-05-06 | 2006-04-26 | ソニー株式会社 | Semiconductor light emitting device |
| JP3604550B2 (en) * | 1997-12-16 | 2004-12-22 | 日亜化学工業株式会社 | Method for manufacturing nitride semiconductor device |
| JP3895287B2 (en) * | 2003-03-06 | 2007-03-22 | 弘明 三澤 | Method and apparatus for dividing sapphire substrate |
| JP4279631B2 (en) * | 2003-08-20 | 2009-06-17 | 三菱化学株式会社 | Nitride semiconductor device manufacturing method |
| JP2005271563A (en) * | 2004-03-26 | 2005-10-06 | Daitron Technology Co Ltd | Dividing processing method of hard and brittle plate and apparatus for it |
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Also Published As
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| JP5548143B2 (en) | 2014-07-16 |
| JP2012156217A (en) | 2012-08-16 |
| KR101390115B1 (en) | 2014-04-28 |
| TWI447964B (en) | 2014-08-01 |
| KR20120086241A (en) | 2012-08-02 |
| TW201232836A (en) | 2012-08-01 |
| CN102610711A (en) | 2012-07-25 |
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