CN102610662A - Laminated composite passivation film used on back surface of monocrystalline silicon solar cell - Google Patents
Laminated composite passivation film used on back surface of monocrystalline silicon solar cell Download PDFInfo
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- CN102610662A CN102610662A CN2011100277769A CN201110027776A CN102610662A CN 102610662 A CN102610662 A CN 102610662A CN 2011100277769 A CN2011100277769 A CN 2011100277769A CN 201110027776 A CN201110027776 A CN 201110027776A CN 102610662 A CN102610662 A CN 102610662A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a laminated composite passivation film used on the back surface of a monocrystalline silicon solar cell, which is characterized in that: the back light surface, namely the lower surface, of a solar-cell monocrystalline silicon substrate (1) is sequentially provided with a silicon oxide film (2) and an amorphous silicon film (3) from inside to outside. The laminated composite passivation film disclosed by the invention adopts an amorphous silicon-silicon oxide combined film structure, thereby making up for the shortcomings of silicon oxide films; and meanwhile, a long-term high temperature process is avoided in the process of preparation. By using the structure, a passivation film with an excellent passivation effect is obtained, a long-term high temperature process of a cell wafer is avoided, and the conversion efficiency of the cell wafer can reach more than 18.5%.
Description
Technical field
The present invention relates to a kind of monocrystaline silicon solar cell, especially a kind of lamination passivating film of rear surface of solar cell, the lamination composite passivation film is used at specifically a kind of monocrystaline silicon solar cell back side.
Background technology
Monocrystaline silicon solar cell is a kind ofly to convert solar energy luminous energy the device of electric energy to, and the battery sheet produces photo-generated carrier when illumination, and photo-generated carrier is divided into many sons and few son, and wherein there is extremely important influence in the life-span of few son to the conversion efficiency of battery sheet.
Minority carrier lifetime is determined by body life time, upper surface useful life and the back side useful life of battery sheet jointly; Solar cell requires to have the higher quality specific power, and this requires the thickness of attenuate solar cell as far as possible, and when battery sheet attenuate, surface lifetime, at this moment, few sub-useful life was basically by determining surface lifetime far below body life time.
Surface recombination has tangible influence to minority carrier lifetime, implements surface passivation, reduces surface recombination, is the important measures that improve minority carrier lifetime; Surface passivation reduces semi-conductive surface activity, and the recombination velocity on surface is reduced, and its main mode is the dangling bonds at saturated semiconductor surface place.
In the monocrystaline silicon solar cell sheet, at cell back light face printing one deck aluminium paste, form aluminium back of the body field through sintering then usually, form the P+ layer, it is compound that this can reduce the back side effectively; But because the thermal coefficient of expansion of aluminium and silicon differs bigger, amount of contraction is different when behind sintering, cooling off, and can cause battery sheet warpage, the fragment rate when increasing encapsulation greatly, and along with the battery sheet is more and more thinner, this effect can be more and more obvious.
Be employed in now the cell back method that long layer oxide film carries out passivation of looking unfamiliar in addition; Process has two kinds, i.e. dry oxidation and wet oxidation, and dry oxidation usually will be through 900 ~ 1000 ℃ high temperature; But the oxide-film short texture that oxidizing process forms; There are a large amount of hydroxyls in oxide layer and silicon interface, and it is compound to increase the back side on the contrary, are difficult to play passivation.
At present; The passivation situation that other is also arranged; Like the patent No. is the chemical oxidization method of mentioning in the patent of CN101548395A; This method can form quality silica passivation layer preferably down in lower temperature (150 ℃), but this method need increase operation and equipment, in suitability for industrialized production, certainly will roll up cost.
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Summary of the invention
The objective of the invention is not goodly and complicated process of preparation is asked, the problem big to battery sheet damage, propose that a kind of passivation effect is outstanding, the lamination composite passivation film is used at the simple monocrystaline silicon solar cell of the preparation technology back side to the existing structure passivation effect of present monocrystaline silicon solar cell sheet shady face passivation.
Technical scheme of the present invention is:
The lamination composite passivation film is used at a kind of monocrystaline silicon solar cell back side, is lower surface at the shady face of solar battery mono-crystal silicon substrate, is provided with silicon oxide film and amorphous silicon membrane from the inside to the outside successively.
Single crystal silicon substrate of the present invention is the p type single crystal silicon matrix.
Silicon oxide film of the present invention is a silicon dioxide layer, and thickness is 10 ~ 20nm.
The thickness of amorphous silicon membrane of the present invention is 20 ~ 30nm.
Beneficial effect of the present invention:
The present invention adopts the structure of amorphous silicon combination silicon oxide film, remedies the shortcoming of silicon oxide film, in the preparation process, has avoided long pyroprocess simultaneously.Adopt this structure, obtained the excellent passivating film of passivation effect, avoided the long-time pyroprocess of battery sheet, the average conversion efficiency of the industrialization of battery sheet reaches more than 18.5%.
Description of drawings
Fig. 1 is a structural representation of the present invention.
1, single crystal silicon substrate; 2, silicon oxide film; 3, amorphous silicon membrane.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is further described.
As shown in Figure 1, the lamination composite passivation film is used at a kind of monocrystaline silicon solar cell back side, is that the shady face of p type single crystal silicon matrix is a lower surface at solar cell, is provided with silicon oxide film 2 and amorphous silicon membrane 3 from the inside to the outside successively.
The present invention adopts the structure of amorphous silicon combination silicon oxide film, remedies the shortcoming of silicon oxide film, in the preparation process, has avoided long pyroprocess simultaneously.Adopt this structure, obtained the excellent passivating film of passivation effect, avoided the long-time pyroprocess of battery sheet, the average conversion efficiency of the industrialization of battery sheet reaches more than 18.5%.
During practical implementation:
This is practical to provide a kind of monocrystaline silicon solar cell, it be included in one deck silicon oxide film 2 of growth above the single crystal silicon substrate 1 and on 2 surfaces with PECVD deposition one deck amorphous silicon membrane 3.Silica 2 directly kept the logical oxygen of diffusion temperature 5 ~ 10 minutes after diffusion is accomplished, and did not need independent operation, and composition is a silicon dioxide; But the silicon oxide film 2 that generates like this is thinner; Have only 10 ~ 20nm, be not enough to play the effect of abundant passivation, if form thicker oxide layer; The pyroprocess of battery sheet is prolonged, the battery sheet is caused damage.Therefore, with PECVD method deposition one deck amorphous silicon membrane, this process is carried out at 250 ~ 300 ℃, has reduced the pyroprocess of silicon chip on silica membrane, and the thickness of this layer is 20 ~ 30nm.Adopt this structure, obtained the excellent passivating film of passivation effect, the long-time pyroprocess of the battery sheet of avoiding, battery sheet transformation efficiency reaches more than 18.5%.
This practical technical process is at first after diffusion is accomplished, to keep furnace temperature, logical oxygen 5 ~ 10 minutes, growing silicon oxide film 2, thickness 10 ~ 20nm, 800 ~ 860 ℃ of growth temperatures; Deposition of amorphous silicon films 3 in PECVD equipment then, thickness 20 ~ 30nm, depositing temperature are 250 ~ 300 ℃.
The present invention does not relate to all identical with the prior art prior art that maybe can adopt of part and realizes.
Claims (4)
1. the lamination composite passivation film is used at a monocrystaline silicon solar cell back side, it is characterized in that the shady face at solar battery mono-crystal silicon substrate (1) is a lower surface, is provided with silicon oxide film (2) and amorphous silicon membrane (3) from the inside to the outside successively.
2. the lamination composite passivation film is used at the monocrystaline silicon solar cell according to claim 1 back side, it is characterized in that described single crystal silicon substrate (1) is the p type single crystal silicon matrix.
3. the lamination composite passivation film is used at the monocrystaline silicon solar cell according to claim 1 back side, it is characterized in that described silicon oxide film (2) is a silicon dioxide layer, and thickness is 10 ~ 20nm.
4. the lamination composite passivation film is used at the monocrystaline silicon solar cell according to claim 1 back side, and the thickness that it is characterized in that described amorphous silicon membrane (3) is 20 ~ 30nm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011100277769A CN102610662A (en) | 2011-01-25 | 2011-01-25 | Laminated composite passivation film used on back surface of monocrystalline silicon solar cell |
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| CN2011100277769A CN102610662A (en) | 2011-01-25 | 2011-01-25 | Laminated composite passivation film used on back surface of monocrystalline silicon solar cell |
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| CN102610662A true CN102610662A (en) | 2012-07-25 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108461564A (en) * | 2018-05-19 | 2018-08-28 | 江苏东鋆光伏科技有限公司 | Anti- PID performances photovoltaic cell and preparation method thereof |
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| CA2684967A1 (en) * | 2007-05-07 | 2008-11-13 | Georgia Tech Research Corporation | Formation of high quality back contact with screen-printed local back surface field |
| CN101447528A (en) * | 2008-12-22 | 2009-06-03 | 上海晶澳太阳能光伏科技有限公司 | Method for preparing antapex contact crystalline silicon solar cell by utilizing passivation on double surfaces and laser dotting |
| CN101548392A (en) * | 2006-12-01 | 2009-09-30 | 夏普株式会社 | Solar cell and method for manufacturing the same |
| US20100258177A1 (en) * | 2009-06-22 | 2010-10-14 | Jihoon Ko | Solar cell and method of manufacturing the same |
| CN101884116A (en) * | 2008-04-17 | 2010-11-10 | Lg电子株式会社 | Solar cell and method of manufacturing the same |
| CN101916795A (en) * | 2010-07-05 | 2010-12-15 | 晶澳太阳能有限公司 | Method for passivating back of crystal silicon solar cell |
| CN201985111U (en) * | 2011-01-25 | 2011-09-21 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | Laminated composite passive film used on back surface of monocrystalline silicon solar battery |
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2011
- 2011-01-25 CN CN2011100277769A patent/CN102610662A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101548392A (en) * | 2006-12-01 | 2009-09-30 | 夏普株式会社 | Solar cell and method for manufacturing the same |
| CA2684967A1 (en) * | 2007-05-07 | 2008-11-13 | Georgia Tech Research Corporation | Formation of high quality back contact with screen-printed local back surface field |
| CN101884116A (en) * | 2008-04-17 | 2010-11-10 | Lg电子株式会社 | Solar cell and method of manufacturing the same |
| CN101447528A (en) * | 2008-12-22 | 2009-06-03 | 上海晶澳太阳能光伏科技有限公司 | Method for preparing antapex contact crystalline silicon solar cell by utilizing passivation on double surfaces and laser dotting |
| US20100258177A1 (en) * | 2009-06-22 | 2010-10-14 | Jihoon Ko | Solar cell and method of manufacturing the same |
| CN101916795A (en) * | 2010-07-05 | 2010-12-15 | 晶澳太阳能有限公司 | Method for passivating back of crystal silicon solar cell |
| CN201985111U (en) * | 2011-01-25 | 2011-09-21 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | Laminated composite passive film used on back surface of monocrystalline silicon solar battery |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108461564A (en) * | 2018-05-19 | 2018-08-28 | 江苏东鋆光伏科技有限公司 | Anti- PID performances photovoltaic cell and preparation method thereof |
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Application publication date: 20120725 |