CN102598317A - 多孔氮化物半导体上的高品质非极性/半极性半导体器件及其制造方法 - Google Patents
多孔氮化物半导体上的高品质非极性/半极性半导体器件及其制造方法 Download PDFInfo
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- CN102598317A CN102598317A CN2010800466035A CN201080046603A CN102598317A CN 102598317 A CN102598317 A CN 102598317A CN 2010800466035 A CN2010800466035 A CN 2010800466035A CN 201080046603 A CN201080046603 A CN 201080046603A CN 102598317 A CN102598317 A CN 102598317A
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
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- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract
Description
Claims (11)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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KR1020090098521A KR101082788B1 (ko) | 2009-10-16 | 2009-10-16 | 다공성 질화물 반도체 상의 고품질 비극성/반극성 반도체 소자 및 그 제조 방법 |
KR10-2009-0098521 | 2009-10-16 | ||
PCT/KR2010/005764 WO2011046292A2 (ko) | 2009-10-16 | 2010-08-27 | 다공성 질화물 반도체 상의 고품질 비극성/반극성 반도체 소자 및 그 제조 방법 |
Publications (1)
Publication Number | Publication Date |
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CN102598317A true CN102598317A (zh) | 2012-07-18 |
Family
ID=43876653
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2010800466035A Pending CN102598317A (zh) | 2009-10-16 | 2010-08-27 | 多孔氮化物半导体上的高品质非极性/半极性半导体器件及其制造方法 |
Country Status (4)
Country | Link |
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US (1) | US9153737B2 (zh) |
KR (1) | KR101082788B1 (zh) |
CN (1) | CN102598317A (zh) |
WO (1) | WO2011046292A2 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104810441A (zh) * | 2014-01-29 | 2015-07-29 | 锐晶科技有限公司 | 发光元件 |
CN109148654A (zh) * | 2018-08-30 | 2019-01-04 | 芜湖德豪润达光电科技有限公司 | 非极性面ⅲ族氮化物外延结构及其制备方法 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
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EP3923352A1 (en) | 2010-01-27 | 2021-12-15 | Yale University, Inc. | Conductivity based selective etch for gan devices and applications thereof |
US9558954B2 (en) * | 2010-04-22 | 2017-01-31 | Luminus Devices, Inc. | Selective wet etching and textured surface planarization processes |
KR101393624B1 (ko) * | 2012-01-27 | 2014-05-12 | 한국광기술원 | 적층결함이 제거된 반분극 질화물 소자의 제조방법 |
US20150084058A1 (en) * | 2012-03-19 | 2015-03-26 | Koninklijke Philips N.V. | Light emitting device grown on a silicon substrate |
KR101391960B1 (ko) * | 2012-05-07 | 2014-05-12 | 한국산업기술대학교산학협력단 | 저결함 질화물 반도체층을 갖는 고품질 반도체 소자용 기판의 제조 방법 |
WO2014004261A1 (en) | 2012-06-28 | 2014-01-03 | Yale University | Lateral electrochemical etching of iii-nitride materials for microfabrication |
KR101317106B1 (ko) * | 2012-08-20 | 2013-10-11 | 전북대학교산학협력단 | 오믹 컨택 제조방법 및 이에 의하여 제조된 오믹 컨택 |
KR101372352B1 (ko) * | 2012-09-07 | 2014-03-12 | 전북대학교산학협력단 | p-GaN 오믹 전극 제조방법 및 이에 의하여 제조된 p-GaN 오믹 전극 |
KR101355086B1 (ko) * | 2012-12-18 | 2014-01-27 | 한국광기술원 | 나노 필러 구조를 이용한 반극성 질화물층의 제조방법 |
CN104218128B (zh) * | 2013-05-31 | 2018-12-14 | 晶元光电股份有限公司 | 具有高效率反射结构的发光元件 |
JP6160501B2 (ja) * | 2014-02-12 | 2017-07-12 | 豊田合成株式会社 | 半導体装置の製造方法 |
US11095096B2 (en) | 2014-04-16 | 2021-08-17 | Yale University | Method for a GaN vertical microcavity surface emitting laser (VCSEL) |
CN107078190B (zh) | 2014-09-30 | 2020-09-08 | 耶鲁大学 | 用于GaN垂直微腔面发射激光器(VCSEL)的方法 |
US11018231B2 (en) | 2014-12-01 | 2021-05-25 | Yale University | Method to make buried, highly conductive p-type III-nitride layers |
CN107710381B (zh) * | 2015-05-19 | 2022-01-18 | 耶鲁大学 | 涉及具有晶格匹配的覆层的高限制因子的iii族氮化物边发射激光二极管的方法和器件 |
US11949039B2 (en) * | 2018-11-05 | 2024-04-02 | King Abdullah University Of Science And Technology | Optoelectronic semiconductor device with nanorod array |
CN113745361A (zh) * | 2021-07-20 | 2021-12-03 | 五邑大学 | 一种多孔GaN窄带紫外光电二极管及其制备方法 |
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JP2001223165A (ja) * | 2000-02-10 | 2001-08-17 | Hitachi Cable Ltd | 窒化物半導体及びその製造方法 |
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CN101054723A (zh) * | 2007-02-07 | 2007-10-17 | 深圳市淼浩高新科技开发有限公司 | 一种r面蓝宝石晶体的生长方法 |
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JP2964941B2 (ja) * | 1996-01-12 | 1999-10-18 | 日本電気株式会社 | 光デバイスの製造方法及び実装構造 |
JP3780832B2 (ja) | 2000-08-03 | 2006-05-31 | 日立電線株式会社 | 半導体結晶の製造方法 |
JP2005085851A (ja) | 2003-09-05 | 2005-03-31 | Hitachi Cable Ltd | 窒化物系化合物半導体発光素子の製造方法 |
KR100744933B1 (ko) | 2003-10-13 | 2007-08-01 | 삼성전기주식회사 | 실리콘 기판 상에 형성된 질화물 반도체 및 그 제조 방법 |
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- 2010-08-27 CN CN2010800466035A patent/CN102598317A/zh active Pending
- 2010-08-27 WO PCT/KR2010/005764 patent/WO2011046292A2/ko active Application Filing
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CN104810441A (zh) * | 2014-01-29 | 2015-07-29 | 锐晶科技有限公司 | 发光元件 |
CN109148654A (zh) * | 2018-08-30 | 2019-01-04 | 芜湖德豪润达光电科技有限公司 | 非极性面ⅲ族氮化物外延结构及其制备方法 |
Also Published As
Publication number | Publication date |
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WO2011046292A2 (ko) | 2011-04-21 |
WO2011046292A3 (ko) | 2011-06-30 |
KR20110041611A (ko) | 2011-04-22 |
US9153737B2 (en) | 2015-10-06 |
US20120205665A1 (en) | 2012-08-16 |
KR101082788B1 (ko) | 2011-11-14 |
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