CN102593257A - Preparation method for double-faced power generation metal wrap through (MWT) solar cell - Google Patents
Preparation method for double-faced power generation metal wrap through (MWT) solar cell Download PDFInfo
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- CN102593257A CN102593257A CN2012100569390A CN201210056939A CN102593257A CN 102593257 A CN102593257 A CN 102593257A CN 2012100569390 A CN2012100569390 A CN 2012100569390A CN 201210056939 A CN201210056939 A CN 201210056939A CN 102593257 A CN102593257 A CN 102593257A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The embodiment of the invention discloses a preparation method for a double-faced power generation metal wrap through (MWT) solar cell. The method comprises the following steps of: forming a positive-negative (PN) junction on the upper surface of a silicon wafer, and forming a back field on the lower surface of the silicon wafer; drilling a hole at the preset position of the silicon wafer by adopting lasers; printing a corrosive material within a preset range around the hole drilled by the lasers by adopting a screen printing process; drying the corrosive material; and cleaning the silicon wafer. When the double-faced power generation solar cell is prepared by adopting the method provided by the invention, an affected layer caused by laser hole drilling is also removed while the back field is removed, and moreover, the process flow is simplified, and the cost is favorably controlled.
Description
Technical field
The present invention relates to technical field of solar batteries, relate in particular to a kind of preparation method of two-sided generating MWT solar cell.
Background technology
Two-sided power generation solar battery, its two surfaces can both be electric energy with transform light energy, therefore can greatly improve the power output of solar cell.Metal piercing is reeled technology (MWT, Metal Wrap Through) when being incorporated in the two-sided power generation solar battery, need to remove the back of the body field of subregion.Two-sided generating MWT solar cell is guided to the back side with front gate line through the via hole slurry, and the slurry point that to form a diameter overleaf be 2～5mm, with the convenient assembly that forms.Need carry out insulation processing between front gate line that the via hole place is corresponding and the back side grid line, and because the existence of back side diffusion field (being called for short back of the body field), via hole slurry point can cause electric leakage with the place of a back of the body contact position, so need the back of the body field around the via hole be removed.
Be everlasting in the existing technology behind the formation back of the body field, the silicon of the interior certain depth of regions around the use laser ablation via hole reaches and removes the purpose of carrying on the back the field.The method can be accomplished a punching and a hole back of the body job of removing on every side through one step of laser, simplifies technological process, helps cost control.But laser is when punching and removal back of the body field; Its high temperature irradiation can cause very big damage to silicon materials; Can form affected layer at laser entrance face and hole wall place; If do not remove this affected layer, the charge carrier complex centre in the affected layer will reduce the photo-generated carrier life-span and cause battery drain, influence the cell photoelectric conversion efficiency; If remove this affected layer, then can increase extra chemical treatment step, increase the complexity of technological process, be unfavorable for cost control.
The method of the another kind removal back of the body field in the existing technology is: after forming back of the body field, form one deck mask (like SiO in the place that need not remove back of the body field
2Film or SiN
xFilm), utilize caustic washing method to remove the back of the body field of no mask overlay area again.This kind method can be removed the back of the body field of no masked areas preferably, but the mask quality is had very high requirement, if the mask quality is not good enough, then in the cleaning process, aqueous slkali may cause damage to the mask overlay area; In addition, this kind method also need be considered how to form suitable mask shape and will utilize chemical device to carry out alkali cleaning, has increased process complexity and flow process.
Summary of the invention
In view of this, the embodiment of the invention provides a kind of preparation method of two-sided generating MWT solar cell, adopt this method when removing back of the body field, also can remove the affected layer that laser drilling forms, and technological process is fairly simple.
For addressing the above problem, the embodiment of the invention provides following technical scheme:
A kind of preparation method of two-sided generating MWT solar cell, this method comprises:
Form PN junction at the silicon chip upper surface, form back of the body field at its lower surface;
Adopt the predetermined position punching of laser at said silicon chip;
Adopt silk-screen printing technique with Corrosive Materia be printed on that laser punches around preset range in;
Said Corrosive Materia is dried;
Said silicon chip is cleaned.
Preferably, in the said method, after said silicon chip is cleaned, also comprise:
Form silicon nitride film at said PN junction respectively with carrying on the back on the field;
Printing via hole slurry, back side grid line and front gate line on silicon chip, and sintering.
Preferably, in the said method, the temperature that said Corrosive Materia is dried is 200～300 ℃.
Preferably, in the said method, said Corrosive Materia is the slurry that contains KOH.
Preferably, in the said method, the preset range around said laser punched is: the hole of being beaten with laser is the center of circle, and radius is the scope of 0.5～5mm.
Preferably, in the said method, the aperture that laser punched is 50～500 μ m.
Preferably, in the said method, said laser is solid or pulse gas-laser device, and Wavelength of Laser is 300～1600nm, and its pulse length is 10ps～300ns, and repetition rate is 100～200KHz, and laser facula is 5～100 μ m.
Preferably, in the said method, the time that said silicon chip is cleaned is greater than 1min.
Can find out from technique scheme; The preparation method of the two-sided generating MWT solar cell that the embodiment of the invention provided; Adopt silk-screen printing technique with Corrosive Materia be printed on that laser punches around preset range in, afterwards said Corrosive Materia is dried, clean then; Because Corrosive Materia has good printing and flowability; Therefore; Back of the body field and hole wall around laser punched all cover being corroded property material, and Corrosive Materia described in the drying course will with the silicon material formation solable matter that reacts, follow-uply can said solable matter be cleaned up through cleaning; So not only removed back of the body field; Prevented to be short-circuited between the upper and lower surfaces grid line and caused electric leakage, and removed laser drilling and the affected layer that forms, avoided the charge carrier complex centre in the affected layer to reduce the photo-generated carrier life-span and cause battery drain.The present invention can remove back of the body field and affected layer simultaneously through the method for silk screen printing Corrosive Materia, has guaranteed the photoelectric conversion efficiency of battery, and has simplified technological process, helps cost control.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art; To do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below; Obviously, the accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills; Under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is preparation method's schematic flow sheet of a kind of two-sided generating MWT solar cell that the embodiment of the invention provided.
Embodiment
To combine the accompanying drawing in the embodiment of the invention below, the technical scheme in the embodiment of the invention is carried out clear, intactly description, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the present invention's protection.
A lot of details have been set forth in the following description so that make much of the present invention; But the present invention can also adopt other to be different from alternate manner described here and implement; Those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention does not receive the restriction of following disclosed specific embodiment.
With reference to figure 1, Fig. 1 is preparation method's schematic flow sheet of a kind of two-sided generating MWT solar cell that the embodiment of the invention provided, and this method specifically comprises the steps:
Step S1: form PN junction at the silicon chip upper surface, form back of the body field at its lower surface.
Form PN junction through High temperature diffusion technology at the silicon chip upper surface, promptly form emitter; Form highly doped zone through diffusion technology at the silicon chip lower surface afterwards, i.e. back of the body field.
Step S2: adopt the predetermined position punching of laser at said silicon chip.
Used laser is pulse laser in this step; It can be a solid pulse laser; Can be the pulse gas-laser device also, Wavelength of Laser can be from 300nm to 1600nm, and its pulse length can be from 10ps to 300ns; Repetition rate can be from 100Hz to 200KHz, through collimation, expand bundle, focus on project silicon chip surface laser spot diameter from 5 μ m to 100 μ m.
The position of on silicon chip, punching pre-sets; And carry out from the silicon chip back side during punching; Each aperture, hole of being beaten is all identical; Each Kong Jun penetrates said silicon chip, and the filled conductive slurry can be guided to the back side by the grid line (follow-up formation) that silicon chip is positive in respective aperture afterwards, thereby makes front gate line be connected with the set electrical component in the silicon chip back side.
The aperture of adopting laser on silicon chip, to be punched can be from 50 μ m to 500 μ m.
Step S3: adopt silk-screen printing technique with Corrosive Materia be printed on that laser punches around preset range in.
Through the design of special silk screen, make Corrosive Materia (or claiming corrosivity slurry) with the mode of silk screen printing be printed on that laser punched around preset range in, it is the center of circle that said preset range refers generally to the hole, in the circle of radius from 0.5mm to 5mm.Because the corrosivity slurry has rheological characteristic preferably, so also can the entering part slurry in the hole, the back of the body and hole inwall all cover the corrosivity slurry.
Said corrosivity slurry be at a lower temperature to silicon materials have corrosiveness, good, the easy cleaned Corrosive Materia of printing, said corrosivity slurry is generally alkaline slurry, for example contains the slurry of KOH composition etc.
Step S4: said Corrosive Materia is dried.
Making said Corrosive Materia is to dry under 200 ℃～300 ℃ in temperature, and under this temperature, corrosive slurry and the silicon materials reaction that is contacted form solable matter.
Step S5: said silicon chip is cleaned.
Adopt the aqueous solution that said silicon chip is cleaned, scavenging period should to remove product and residual corrosivity slurry, be confirmed the back of the body field of position and the damage that laser drilling causes thereby removed greater than 1min on the silicon chip.
Step S6: form silicon nitride film respectively with carrying on the back on the field at said PN junction.
Upper and lower surfaces at the silicon chip that is formed with PN junction and back of the body field forms silicon nitride film respectively; Said silicon nitride film generally forms through PECVD (plasma reinforced chemical vapour deposition) method; Thereby the dangling bonds of silicon chip surface are filled up through hydrogen atom; Play the effect of passivation, also can play a protective role simultaneously and anti-reflection effect.
Step S7: printing via hole slurry, back side grid line and front gate line on silicon chip, and sintering.
The employing silk-screen printing technique is dried at silicon chip back up via hole slurry afterwards, the printed back grid line, and printing front gate line in oven dry back is dried also sintering at last more again, thereby accomplishes the preparation of two-sided power generation solar battery.
The two-sided power generation solar battery that adopts method for preparing to come out has been removed the back of the body field at the silicon chip back side through the corrosivity slurry, to reach the purpose of mutually insulated between battery front side grid line and the back side grid line; And when adopting the corrosivity slurry to remove back of the body field, also removed the affected layer that laser drilling forms, and guarantee the photoelectric conversion efficiency of battery, and simplified technological process, help the control of cost.
Describe the preparation method of two-sided generating MWT solar cell provided by the present invention in detail below in conjunction with a specific embodiment.
The first step, select the p type single crystal silicon sheet, crystal face is (1,0,0), and silicon wafer thickness is 180 μ m, to this silicon chip clean, making herbs into wool, diffused emitter, diffusion back field, edge etching, laser drilling.
Second step, adopt silk-screen printing technique with the corrosivity slurry be printed on that laser punches around preset range in, dry afterwards, clean to remove the damage that the back of the body field of confirming position (confirming the zone around the via hole) on the silicon chip and laser drilling cause.
It is the pattern of 3mm that the silk screen of printing corrosivity slurry is designed to the hole to center of circle radius, and the adjustment printing parameter guarantees that the back of the body and hole inwall all cover the corrosivity slurry.The temperature that the corrosivity slurry is dried is 200 ℃, and adopting the time of washed with de-ionized water silicon chip is 5min.
The 3rd step, the silicon nitride film of lower surface formation above that, at the formed silicon nitride thickness of silicon chip upper surface 90nm, refractive index is 2.2; At the formed silicon nitride thickness of its lower surface 80nm, refractive index is 2.1.
The 4th step, employing silk-screen printing technique are at first at silicon chip back up via hole slurry, and making the slurry spot diameter at the back side is 3mm, after the oven dry; Printed back grid line, and the wide 100 μ m of the thin grid line at the back side, oven dry back printing front gate line again; And the positive wide 80 μ m of thin grid line, oven dry more at last, sintering.
By on can know, adopt method provided by the present invention to prepare in the process of two-sided power generation solar battery, when removing the cell backside back of the body, also removed laser drilling and the damage that forms, and simplified processing step, help the control of cost.
To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the present invention.Multiple modification to these embodiment will be conspicuous concerning those skilled in the art, and defined General Principle can realize under the situation that does not break away from the spirit or scope of the present invention in other embodiments among this paper.Therefore, the present invention will can not be restricted to embodiment illustrated herein, but will meet and principle disclosed herein and features of novelty the wideest corresponding to scope.
Claims (8)
1. the preparation method of a two-sided generating MWT solar cell is characterized in that, comprising:
Form PN junction at the silicon chip upper surface, form back of the body field at its lower surface;
Adopt the predetermined position punching of laser at said silicon chip;
Adopt silk-screen printing technique with Corrosive Materia be printed on that laser punches around preset range in;
Said Corrosive Materia is dried;
Said silicon chip is cleaned.
2. method according to claim 1 is characterized in that, after said silicon chip is cleaned, also comprises:
Form silicon nitride film at said PN junction respectively with carrying on the back on the field;
Printing via hole slurry, back side grid line and front gate line on silicon chip, and sintering.
3. method according to claim 1 is characterized in that, the temperature that said Corrosive Materia is dried is 200～300 ℃.
4. method according to claim 3 is characterized in that, said Corrosive Materia is the slurry that contains KOH.
5. method according to claim 1 is characterized in that, the preset range around said laser punched is: the hole of being beaten with laser is the center of circle, and radius is the scope of 0.5～5mm.
6. method according to claim 5 is characterized in that, the aperture that laser punched is 50～500 μ m.
7. method according to claim 5 is characterized in that, said laser is solid or pulse gas-laser device, and Wavelength of Laser is 300～1600nm, and its pulse length is 10ps～300ns, and repetition rate is 100～200KHz, and laser facula is 5～100 μ m.
8. according to each described method of claim 1～7, it is characterized in that the time that said silicon chip is cleaned is greater than 1min.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103258914A (en) * | 2013-05-31 | 2013-08-21 | 英利集团有限公司 | MWT solar battery and manufacturing method thereof |
| CN103258917A (en) * | 2013-05-31 | 2013-08-21 | 英利集团有限公司 | MWT solar battery piece and manufacturing method thereof |
| CN103268908A (en) * | 2013-05-31 | 2013-08-28 | 英利集团有限公司 | MWT solar cell piece manufacturing method |
| CN103367548A (en) * | 2013-07-16 | 2013-10-23 | 英利集团有限公司 | Method for manufacturing silicon wafer markers |
| CN106876492A (en) * | 2017-03-24 | 2017-06-20 | 乐叶光伏科技有限公司 | P-type crystal silicon double-side cell structure and preparation method thereof |
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| CN103258914A (en) * | 2013-05-31 | 2013-08-21 | 英利集团有限公司 | MWT solar battery and manufacturing method thereof |
| CN103258917A (en) * | 2013-05-31 | 2013-08-21 | 英利集团有限公司 | MWT solar battery piece and manufacturing method thereof |
| CN103268908A (en) * | 2013-05-31 | 2013-08-28 | 英利集团有限公司 | MWT solar cell piece manufacturing method |
| CN103367548A (en) * | 2013-07-16 | 2013-10-23 | 英利集团有限公司 | Method for manufacturing silicon wafer markers |
| CN106876492A (en) * | 2017-03-24 | 2017-06-20 | 乐叶光伏科技有限公司 | P-type crystal silicon double-side cell structure and preparation method thereof |
| CN106876492B (en) * | 2017-03-24 | 2018-07-24 | 隆基乐叶光伏科技有限公司 | P-type crystal silicon double-side cell structure and preparation method thereof |
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Application publication date: 20120718 |