CN102593181A

CN102593181A - Silicon-on-insulator (SOI) underlay-based high-voltage metal oxide semiconductor tube and manufacturing method

Info

Publication number: CN102593181A
Application number: CN2012100864669A
Authority: CN
Inventors: 俞国强; 张邵华
Original assignee: Hangzhou Silan Microelectronics Co Ltd
Current assignee: Hangzhou Silan Microelectronics Co Ltd
Priority date: 2012-03-28
Filing date: 2012-03-28
Publication date: 2012-07-18
Anticipated expiration: 2032-03-28
Also published as: CN102593181B

Abstract

The invention provides a silicon-on-insulator (SOI) underlay-based high-voltage metal oxide semiconductor tube and a manufacturing method thereof, which can thoroughly eliminate parasitical latch effect existing in a traditional bulk silicon circuit through an all-dielectric isolation technology of a deep groove on the basis of an SOI substrate slice. A high-voltage metal-oxide semiconductor (MOS) tube with thick gate oxide, being prepared by a double-gate-oxide process flow is adopted, so that the reliability is good, and the starting voltage can be improved. A drain-region junction terminal expanding technology is formed in a drain region structure of the high-voltage MOS tube, and a source-region junction terminal expanding technology is formed in a source region structure of the high-voltage MOS tube to be used for adjusting a threshold voltage of devices, so that double functions can be realized. The source-region junction terminal expanding technology is combined with the drain-region junction terminal expanding technology to use, and a double-region junction terminal expanding technology is formed, so that the voltage resistance of the device can be further improved, the size of the device can be reduced, the pattern area can be reduced, and the integration degree of a chip can be improved. The source-region structure is provided with an aluminum field plate above a polycrystalline field plate to be short-circuited with a source electrode, so that the voltage resistance of the device can be improved.

Description

High-voltage metal oxide semiconductor pipe and manufacturing approach based on the SOI substrate

Technical field

The present invention relates to integrated circuit and make the field, relate in particular to a kind of high-voltage metal oxide semiconductor pipe and manufacturing approach based on the SOI substrate.

Background technology

Silicon on the dielectric substrate (SOI:Silicon On Insulator) technology has the incomparable superiority of many body silicon technologies as a kind of full dielectric isolation technology.That the burning property management (metal-oxide-semiconductor) of SOI has is low in energy consumption, antijamming capability is strong, integration density is high, and speed high (parasitic capacitance is little), technology is simple, capability of resistance to radiation is strong, and has thoroughly eliminated the advantages such as parasitic latch-up of body silicon MOS device.The metal-oxide semiconductor (MOS) power IC device has advantages such as switching characteristic is good, power consumption is little, and MOS power device has greater advantage in the range of application of 10-600V.Therefore, be prepared into the MOS power device of conventional bulk silicon technological on the SOI substrate, integrate both advantages, eliminated the latch-up in the integrated circuit fully, other various aspects of performance of integrated circuit is also had been further upgraded.

Summary of the invention

The purpose of this invention is to provide a kind of high performance high-voltage metal oxide semiconductor pipe and manufacturing approach thereof based on the SOI substrate.

For addressing the above problem, the present invention provides a kind of high-voltage metal oxide semiconductor pipe based on the SOI substrate, comprises, a kind of high-voltage metal oxide semiconductor pipe based on the SOI substrate comprises the SOI substrate;

Deep trench is arranged in the said SOI substrate; Drain structure; Be arranged in the said SOI substrate; Said drain structure ecto-entad comprises drain region first kind trap, drain region first kind buffering area and the dense injection region of the drain region first kind that drain region second type buffering area and concentration increase progressively successively, and the dense injection region of the first kind, said drain region is as drain electrode; The source region structure; Be arranged in the said SOI substrate; Comprise the source region second type trap, be arranged in the dense injection region of the source region first kind and the dense injection region of second type, source region of the source region second type buffering area of the source region second type trap, the source region first kind trap that is arranged in the said source region second type buffering area and adjacent setting; Source region first kind trap links to each other with the dense injection region of the first kind, said source region, and dense injection region of the first kind, said source region and the dense injection region of second type, source region are jointly as the source electrode; Field oxygen is arranged on the said drain structure, is positioned at a side of closing on the source region structure; Grid oxygen is arranged between said oxygen and the dense injection of the source region first kind; Grid comprises the polycrystalline grid and the polycrystalline field plate of adjacent setting, and said polycrystalline grid are arranged on the said grid oxygen, and said polycrystalline field plate is arranged on said the oxygen; Interlayer dielectric layer is arranged on the said SOI substrate surface.

Further, the concentration of the said drain region second type buffering area is 2 * 10 ¹⁶Cm ^-3～6 * 10 ¹⁶Cm ^-3, the concentration of said drain region first kind trap is 6 * 10 ¹⁶Cm ^-3～1 * 10 ¹⁷Cm ^-3, the concentration of said drain region first kind buffering area is 3 * 10 ¹⁷Cm ^-3～9 * 10 ¹⁷Cm ^-3, the concentration of the dense injection region of the first kind, said drain region is 4 * 10 ¹⁹Cm ^-3～1 * 10 ²⁰Cm ^-3

Further, the concentration of the said drain region second type buffering area is 4 * 10 ¹⁶Cm ^-3, the concentration of said drain region first kind trap is 8 * 10 ¹⁶Cm ^-3, the concentration of said drain region first kind buffering area is 6 * 10 ¹⁷Cm ^-3, the concentration of the dense injection region of the first kind, drain region is 7 * 10 ¹⁹Cm ^-3

Further, the concentration of the said source region second type trap is 8 * 10 ¹⁵Cm ^-3～4 * 10 ¹⁶Cm ^-3, the concentration of the said source region second type buffering area is 2 * 10 ¹⁶Cm ^-3～6 * 10 ¹⁶Cm ^-3, the concentration of said source region first kind trap is 6 * 10 ¹⁶Cm ^-3～1 * 10 ¹⁷Cm ^-3, the concentration of the dense injection region of the first kind, said source region is 4 * 10 ¹⁹Cm ^-3～1 * 10 ²⁰Cm ^-3, the concentration of the dense injection region of second type, said source region is 1 * 10 ²⁰Cm ^-3～5 * 10 ²⁰Cm ^-3

Further, the concentration of the said source region second type trap is 2 * 10 ¹⁶Cm ^-3, the concentration of the said source region second type buffering area is 4 * 10 ¹⁶Cm ^-3, the concentration of source region first kind trap is 8 * 10 ¹⁶Cm ^-3, the concentration of the dense injection region of the first kind, source region is 7 * 10 ¹⁹Cm ^-3, the concentration of the dense injection region of second type, source region is 3 * 10 ²⁰Cm ^-3

Further, the thickness of said oxygen is 600nm～1500nm.

Further; Said grid oxygen adopts the Dual Gate Oxide structure; The thin grid oxygen and the thick grid oxygen that comprise adjacent setting, said thin grid oxygen are arranged on dense injection region of the source region first kind and the dense injection region of second type, source region, and said thick grid oxygen is arranged between said oxygen and the said thin grid oxygen.

Further, the thickness of said thick grid oxygen is 300nm～800nm, and the thickness of said thin grid oxygen is 12nm～36nm.

Further, said SOI substrate comprises the top silicon layer of substrate slice, buried oxidation layer and second type of the first kind from bottom to up successively.

Further, the thickness of said buried oxidation layer is 1um～2um.

Further, said top silicon layer thickness is 5um～20um, has dopant in the said top silicon layer, and doping content is 3 * 10 ¹⁵m ^-3～7 * 10 ¹⁵Cm ^-3

Further, the degree of depth of said deep trench is 5um～20um.

Further, has the filler that comprises silicon dioxide and unadulterated polysilicon in the said deep trench.

Further, the material of said interlayer dielectric layer is a phosphorosilicate glass.

Further, be provided with the aluminium field plate on the said interlayer dielectric layer of said polycrystalline field plate top, said aluminium field plate and said source electrode are electrical connected.

Further, the said first kind is the P type, and said second type is the N type; Or the said first kind is the N type, and said second type is the P type.

The present invention also provides a kind of manufacturing approach of the high-voltage metal oxide semiconductor pipe based on the SOI substrate, comprises,

SOI is provided substrate, and in said SOI substrate, forms deep trench;

In said SOI substrate, form the source region second type trap;

Carry out ion implantation technology, form drain region second type buffering area and the source region second type buffering area, the said source region second type buffering area is arranged in the said source region second type trap;

Carry out ion implantation technology, form drain region first kind trap and source region first kind trap, said drain region first kind trap is arranged in the said drain region second type buffering area, and said source region first kind trap is arranged in the said source region second type buffering area;

Close on being positioned at of said drain structure and form an oxygen on the side of source region structure;

Between said oxygen and the dense injection of the source region first kind, form grid oxygen;

On said grid oxygen and said oxygen, form grid structure, said grid structure comprises the polycrystalline grid and the polycrystalline field plate of adjacent setting, and said polycrystalline grid are positioned on the said grid oxygen, and said polycrystalline field plate is positioned on said the oxygen;

Carry out ion implantation technology, in the first kind trap of said drain region, form drain region first kind buffering area;

Carry out ion implantation technology, in the first kind buffering area of said drain region, form the dense injection region of the first kind, drain region, in the second type buffering area of said source region, form the dense injection region of the source region first kind and the dense injection region of second type, source region of adjacent setting;

Deposition forms interlayer dielectric layer on said SOI substrate.

Further, the concentration of the said drain region second type buffering area is with 4 * 10 ¹⁶Cm-3, the concentration of said drain region first kind trap is 8 * 10 ¹⁶Cm ^-3, the concentration of said drain region first kind buffering area is 6 * 10 ¹⁷Cm ^-3, the concentration of the dense injection region of the first kind, drain region is 7 * 10 ¹⁹Cm ^-3

Further, the thickness of said oxygen is 600nm～1500nm.

Further; Said SOI substrate comprises the top silicon layer of substrate slice, buried oxidation layer and second type of the first kind from bottom to up successively; The thickness of said buried oxidation layer is 1um～2um; Said top silicon layer thickness is 5um～20um, has dopant in the said top silicon layer, and doping content is 3 * 10 ¹⁵Cm ^-3～7 * 10 ¹⁵Cm ^-3

Further, the degree of depth of said deep trench is 5um～20um.

Further, in said SOI substrate, form before the step of the source region second type trap, comprising: growth regulation one silica layer on said SOI substrate; Said first silicon oxide layer is after the step that forms said drain region first kind trap and source region first kind trap, and the step of said oxygen of formation is removed before.

Further, the thickness of said first silicon oxide layer is 20nm～50nm, and the growth temperature of said first silicon oxide layer is 800 ℃～900 ℃, and growth atmosphere is a wet oxygen, and growth time is 30～60 minutes.

Further, the step that forms the source region second type trap in the said SOI substrate comprises: on said first silicon oxide layer, form the photoresist of patterning, expose first silicon oxide layer that desire forms the zone of the source region second type trap; Dopant ion is injected in the zone that forms the source region second type trap to desire; Remove the photoresist of patterning; Carry out high-temperature annealing process.

Further, the dopant ion that forms the zone injection of the source region second type trap to desire is a phosphonium ion, and implantation dosage is 1.0E12～6.0E12ions/cm ², the injection energy is 60KeV～120KeV.

Further, in said SOI substrate, form in the step of the source region second type trap, the annealing temperature of said high-temperature annealing process is 1000 ℃～1200 ℃; Annealing atmosphere is a nitrogen; Annealing time is 100～300 minutes, and is preferable, and the annealing temperature of said high-temperature annealing process is 1100 ℃～1200 ℃; Annealing atmosphere is a nitrogen, and annealing time is 200～300 minutes.

Further; The step that forms drain region second type buffering area and the source region second type buffering area comprises: on said first silicon oxide layer, form the photoresist of patterning, expose first silicon oxide layer that desire forms the zone of drain region second type buffering area and the source region second type buffering area; Dopant ion is injected in the zone that forms drain region second type buffering area and the source region second type buffering area to desire; Remove the photoresist of patterning; Carry out high-temperature annealing process.

Further, the dopant ion that forms the zone injection of drain region second type buffering area and the source region second type buffering area to desire is a phosphonium ion, and implantation dosage is 2.0E12～8.0E12ions/cm ², the injection energy is 60KeV～120KeV.

Further, in the step that forms drain region second type buffering area and the source region second type buffering area, the annealing temperature of said high-temperature annealing process is 1000 ℃～1200 ℃; Annealing atmosphere is a nitrogen; Annealing time is 100～300 minutes, and is preferable, and the annealing temperature of said high-temperature annealing process is 1100 ℃～1200 ℃; Annealing atmosphere is a nitrogen, and annealing time is 100～200 minutes.

Further, the step that forms drain region first kind trap and source region first kind trap comprises: on said first silicon oxide layer, form the photoresist of patterning, expose first silicon oxide layer that desire forms the zone of drain region first kind trap and source region first kind trap; Dopant ion is injected in the zone that forms drain region first kind trap and source region first kind trap to desire; Remove the photoresist of patterning; Carry out high-temperature annealing process.

Further, the dopant ion that forms the zone injection of drain region first kind trap and source region first kind trap to desire is the boron ion, and implantation concentration is 5.0E12～3E13ions/cm ², the injection energy is 40KeV～100KeV.

Further, in the step that forms drain region first kind trap and source region first kind trap, the annealing temperature of said high-temperature annealing process is 1000 ℃～1200 ℃; Annealing atmosphere is a nitrogen; Annealing time is 100～300 minutes, and is preferable, and the annealing temperature of said high-temperature annealing process is 1100 ℃～1200 ℃; Annealing atmosphere is the atmosphere of nitrogen and oxygen, and annealing time is 100～200 minutes.

Further, comprise between the step of formation drain region first kind trap, source region first kind trap and a formation oxygen: on said SOI substrate, form second silicon oxide layer and silicon nitride layer successively.

Further, the thickness of said second silicon oxide layer is 30nm～60nm, and growth temperature is 850 ℃～1000 ℃, and growth atmosphere is a wet oxygen, and growth time is 30～60 minutes.

Further, the step that forms an oxygen comprises: on said silicon nitride layer, form the photoresist of patterning, expose desire and form a silicon nitride layer in oxygen zone; The said silicon nitride layer of etching exposes second silicon oxide layer that desire forms the zone of an oxygen; Remove the photoresist of patterning; On second silicon oxide layer that exposes, form said oxygen.

Further, the thickness of said silicon nitride layer is 100nm～300nm, adopts low-pressure chemical vapor phase deposition technology, and deposition temperature is 700 ℃～800 ℃.

Further, the growth temperature of said oxygen is 850 ℃～1000 ℃, and growth atmosphere is a wet oxygen, and growth time is 280～400 minutes.

Further, the step that forms thick grid oxygen comprises: on said silicon nitride layer, form the photoresist of patterning, expose the silicon nitride layer that desire forms thick grid oxygen zone; The said silicon nitride layer of etching exposes second silicon oxide layer that desire forms thick grid oxygen zone; Remove the photoresist of patterning; Remove second silicon oxide layer with the hydrofluoric acid wet method, expose the SOI substrate that desire forms thick grid oxygen zone; On the SOI substrate that exposes, form said thick grid oxygen.

Further, the thickness of said thick grid oxygen is 300nm～800nm, adopts and mixes the formation of oxychloride method in the boiler tube, and growth temperature is 900 ℃～1100 ℃, adopts the oxychloride technology of mixing of chloride gaseous state thing to grow, and growth time is 50～100 minutes.

Further, forming the step that approaches grid oxygen comprises: wet method is removed SOI substrate surface residual silicon nitride layer; The rewetting method is removed remaining second silicon oxide layer, exposes the SOI substrate that desire forms thin grid oxygen zone; On the SOI substrate that exposes, form said thin grid oxygen at last.

Further, the thickness of said thin grid oxygen is 12nm～36nm, adopts and mixes the formation of oxychloride method in the boiler tube, and growth temperature is 800 ℃～950 ℃, adopts the oxychloride technology of mixing of chloride gaseous state thing to grow, and growth time is 20～60 minutes.

Further, the step of formation grid structure comprises: deposit one deck polysilicon layer on said SOI substrate; Inject dopant ion to said polysilicon layer; Form the photoresist of patterning, expose the polysilicon layer that desire forms grid; The said polysilicon layer of etching is to form grid structure; Remove the photoresist of patterning.

Further, adopt low-pressure chemical vapor phase deposition method growing polycrystalline silicon layer, the thickness of polysilicon layer is 250nm～600nm.

The dopant ion that further injects to said polysilicon layer is a phosphonium ion, and implantation dosage is 5.0E15～1.0E16ions/cm ², the injection energy is 40KeV～100KeV.

Further, the step of formation drain region first kind buffering area comprises: on said SOI substrate, form the 3rd silicon oxide layer; Form the photoresist of patterning, to expose the zone that desire forms drain region first kind buffering area; Dopant ion is injected in the zone that forms drain region first kind buffering area to desire; Remove the photoresist of patterning; Carry out high-temperature annealing process; Remove said the 3rd silicon oxide layer.

Further, the thickness of said the 3rd silicon oxide layer is 20nm～50nm, and growth temperature is 800 ℃～900 ℃, and growth atmosphere is a wet oxygen, and growth time is 30～60 minutes.

Further, the dopant ion that forms the zone injection of drain region first kind buffering area to desire is the boron ion, and implantation dosage is 3.0E13～1.3E14ions/cm ², the injection energy is 40KeV～100KeV.

Further, form in the high-temperature annealing process of drain region first kind buffering area, annealing temperature is 1000 ℃～1150 ℃, and annealing atmosphere is a nitrogen, and annealing time is 100～200 minutes.

The step of further, the dense injection of the formation drain region first kind, the dense injection region of the source region first kind and the dense injection region of second type, source region comprises: on said SOI substrate, form the 4th silicon oxide layer; Form the photoresist of patterning, to expose the 4th silicon oxide layer that desire forms the zone of the dense injection region of second type, source region; Dopant ion is injected in the zone that forms the dense injection region of second type, source region to desire; Remove the photoresist of patterning; Carry out the high-temperature annealing process first time; Form the photoresist of patterning, expose the 4th silicon oxide layer that desire forms the zone of dense injection region of the first kind, source region and the dense injection region of the first kind, drain region; Dopant ion is injected in the zone that forms dense injection region of the first kind, source region and the dense injection region of the first kind, drain region to desire; Remove the photoresist of patterning; Carry out the high-temperature annealing process second time; Remove said the 4th silicon oxide layer.

Further, the thickness of said the 4th silicon oxide layer is 10nm～30nm, and growth temperature is 800 ℃～900 ℃, and growth atmosphere is dried oxygen, and growth time is 20～60 minutes.

Further, the dopant ion that forms the zone injection of the dense injection region of second type, source region to desire is an arsenic ion, and implantation dosage is 4.0E15～1.0E16ions/cm ², the injection energy is 80KeV～120KeV.

Further, in first time high-temperature annealing process, annealing temperature is 900 ℃～1000 ℃, and annealing atmosphere is the nitrogen oxygen atmosphere, and annealing time is 30～60 minutes.

Further, the dopant ion that forms the zone injection of dense injection region of the first kind, source region and the dense injection region of the first kind, drain region to desire is the boron difluoride ion, and implantation dosage is 1.0E15～5.0E15ions/cm ², the injection energy is 80KeV～120KeV.

Further, in second time high-temperature annealing process, annealing temperature is 900 ℃～1000 ℃, and annealing atmosphere is a nitrogen, and annealing time is 30～60 minutes.

Further, the said first kind is the P type, and said second type is the N type, or the said first kind is the N type, and said second type is the P type.

In sum, compared with prior art, high-voltage metal oxide semiconductor pipe and the manufacturing approach based on the SOI substrate according to the invention has following advantage:

1. the drain structure of the high-voltage metal oxide semiconductor pipe based on the SOI substrate according to the invention has formed drain region knot termination extension technology by drain region first kind trap, drain region first kind buffering area and the dense injection of drain region first kind three, and wherein first kind buffering area in drain region is used for the withstand voltage and operating current of compromise device.The source region structure is made up of the dense injection region of second type, source region, the source region second type buffering area and the source region second type trap; This has formed source region knot termination extension technology the dense injection region of second type, source region, the source region second type buffering area, the source region second type trap and top silicon layer; Wherein the source region second type trap is used for improving device withstand voltage; The threshold voltage that also can be used for trim has double-deck effect.Make up use together through source region knot termination extension technology and drain region knot termination extension technology; Formed two-region knot termination extension technology, can further improve device withstand voltage than the single district of routine knot termination extension technology, thereby reduce device size; The scaled down version area of pictural surface, the integrated level of lifting chip.

2. the drain region second type buffering area of the drain structure of the high-voltage metal oxide semiconductor pipe based on the SOI substrate according to the invention can prevent drain region first kind trap and source region first kind trap punch-through breakdown between the two, thereby improves its puncture voltage.

3. the high-voltage metal oxide semiconductor pipe based on the SOI substrate according to the invention is based on the high-voltage metal oxide semiconductor pipe that the SOI substrate slice combines the full dielectric isolation technology of deep trench, adopts SOI substrate and deep trench isolation technology can thoroughly eliminate the parasitic latch-up that exists in the body silicon circuit in the past.

4. the manufacturing approach of the high-voltage metal oxide semiconductor pipe based on the SOI substrate according to the invention adopts the high-voltage MOS pipe of the thick grid oxygen of Dual Gate Oxide technological process preparation; The grid voltage when oxidated layer thickness of its thick grid oxygen can use according to device (can decide from the demand of 100V～600V) by scope; Thin grid oxygen high tension apparatus different from the past, its grid voltage often is confined in the digital current potential 5V; Thickness is moderate, has both improved the reliability of device, avoids the blocked up switching speed that influences device again.

5. in addition; The source region structure of the high-voltage metal oxide semiconductor pipe based on the SOI substrate according to the invention is provided with the aluminium field plate in polycrystalline field plate top position; With source shorted, the rational position through ingenious layout aluminium field plate and design optimum size can improve the withstand voltage of device.

Description of drawings

Fig. 1 is based on the structural representation of the high-voltage metal oxide semiconductor pipe of SOI substrate in one embodiment of the invention.

Fig. 2 is based on the schematic flow sheet of the manufacturing approach of the high-voltage metal oxide semiconductor pipe of SOI substrate in one embodiment of the invention.

Embodiment

For making content of the present invention clear more understandable,, content of the present invention is described further below in conjunction with Figure of description.Certainly the present invention is not limited to this specific embodiment, and the general replacement that those skilled in the art knew also is encompassed in protection scope of the present invention.

Secondly, the present invention utilizes sketch map to carry out detailed statement, and when instance of the present invention was detailed, for the ease of explanation, sketch map did not amplify according to general ratio is local, should be with this as to qualification of the present invention.

Fig. 1 is based on the structural representation of the high-voltage metal oxide semiconductor pipe of SOI substrate in one embodiment of the invention; As shown in Figure 1; The present invention provides a kind of high-voltage metal oxide semiconductor pipe based on the SOI substrate; Comprise SOI substrate, deep trench, drain structure, source region structure, an oxygen 17, Dual Gate Oxide structure, interlayer dielectric layer 24 and aluminium field plate 21.

Said deep trench is arranged in the said SOI substrate; Wherein said SOI substrate comprises the top silicon layer 3 of substrate slice 1, buried oxidation layer 2 and second type of the first kind from bottom to up successively.Have the filler that comprises silicon dioxide 6 and unadulterated polysilicon 5 in the said deep trench, said SOI substrate and said deep trench have formed the SOI substrate of full dielectric isolation.

Said drain structure is arranged in the top silicon layer 3 of said SOI substrate; Said drain structure ecto-entad comprises drain region first kind trap 13, drain region first kind buffering area 14 and the dense injection region 15 of the drain region first kind that drain region second type buffering area 12 and concentration increase progressively successively, and the dense injection region of the said drain region first kind 15 is as drain electrode; The concentration of the said drain region second type buffering area 12 is 2 * 10 ¹⁶Cm ^-3～6 * 10 ¹⁶Cm ^-3, the concentration of said drain region first kind trap 13 is 6 * 10 ¹⁶Cm ^-3～1 * 10 ¹⁷Cm ^-3, the concentration of said drain region first kind buffering area 14 is 3 * 10 ¹⁷Cm ^-3～9 * 10 ¹⁷Cm ^-3, the concentration of the dense injection region 15 of the first kind, said drain region is 4 * 10 ¹⁹Cm ^-3～1 * 10 ²⁰Cm ^-3

Drain region knot termination extension technology has been formed in said drain region first kind trap 13, drain region first kind buffering area 14 and the dense injection region 15 of the drain region first kind; Three's concentration increases progressively successively; Wherein drain region first kind trap 13 concentration are the lightest, and drain region first kind buffering area 14 concentration are taken second place, and the concentration of the dense injection region 15 of the drain region first kind is the denseest; The outer periphery active area second type trap 11 of the second type buffering area 10 in the source region can play being used for improving device withstand voltage and the bilayer effect of regulating threshold voltage simultaneously.

In addition, the drain region second type buffering area 12 can prevent between drain region first kind trap 13 and the source region first kind trap 9 punch-through breakdown to take place, thereby further improves puncture voltage.Said drain region first kind buffering area 14 is used for the withstand voltage and operating current of compromise device.

Said source region structure is arranged in the top silicon layer 3 of said SOI substrate; Comprise the source region second type trap 11, be arranged in the source region second type trap 11 the source region second type buffering area 10, be arranged in the source region first kind trap 9 of the said source region second type buffering area 10 and the dense injection region 7 of the source region first kind of adjacent setting links to each other with the dense injection region 7 of the said source region first kind with the dense injection region of source region second type 8 source region first kind traps 9, the dense injection region 7 of the said source region first kind and the dense injection region 8 of source region second type are jointly as the source electrode; The concentration of the top silicon layer 3 of said SOI substrate is 3 * 10 ¹⁵Cm ^-3～7 * 10 ¹⁵Cm ^-3, the concentration of the said source region second type trap 11 is 8 * 10 ¹⁵Cm ^-3～4 * 10 ¹⁶Cm ^-3, the concentration of the said source region second type buffering area 10 is 2 * 10 ¹⁶Cm ^-3～6 * 10 ¹⁶Cm ^-3, the concentration of said source region first kind trap 9 is 6 * 10 ¹⁶Cm ^-3～1 * 10 ¹⁷Cm ^-3, the concentration of the dense injection region 7 of the first kind, said source region is 4 * 10 ¹⁹Cm ^-3～1 * 10 ²⁰Cm ^-3, the concentration of the dense injection region 8 of second type, said source region is 1 * 10 ²⁰Cm ^-3～5 * 10 ²⁰Cm ^-3

Formed source region knot termination extension technology together by top silicon layer 3, the source region second type trap 11 and the source region second type buffering area 10 and the source region dense injection of second type; Four concentration increases progressively successively; Top silicon layer 3 concentration are minimum among the three; The source region second type trap, 11 concentration are taken second place, and after the second type buffering area, 10 concentration of source region, the concentration of the dense injection of source region second type is maximum.Combine with said drain region knot termination extension technology, form two-region knot termination extension technology together, further improve device withstand voltage and the bilayer effect of regulating threshold voltage.

Said oxygen 17 is arranged on the top silicon layer 3 of said drain structure, and is positioned at a side of closing on the source region structure; Said Dual Gate Oxide structure comprises the thin grid oxygen 25 and thick grid oxygen 16 of adjacent setting, and said thin grid oxygen 25 is arranged in dense injection region 7 of the source region first kind and the dense injection 8 of source region second type, and said thick grid oxygen 16 is arranged between said oxygen 17 and the said thin grid oxygen 25.

The long thin grid oxygen 25 that routine is arranged above dense injection region 7 of the source region first kind and the dense injection 8 of source region second type; Close on being positioned at of said drain structure on the side of source region structure and be provided with an oxygen 17; Oxygen 17 on the scene and the thin grid oxygen 25 middle long thick grid oxygen 16 that have, the thickness of said oxygen 17 is 600nm～1500nm, the thickness of said thick grid oxygen 16 is 300nm～800nm; The thickness of said thin grid oxygen 25 is 12nm～36nm; The oxidated layer thickness of thick grid oxygen 16 is between field oxygen 17 and thin grid oxygen 25, and is thinner than field oxygen 17, thicker than thin grid oxygen 25; This device architecture is realized in the Dual Gate Oxide technological process, uses more flexible when thick grid oxygen 17 makes circuit design because of its current potential that has improved grid.

Said grid comprises the polycrystalline grid 22 and polycrystalline field plate 23 of adjacent setting, and said polycrystalline grid 22 are arranged on the said thick grid oxygen 16, and said polycrystalline field plate 23 is arranged on said the oxygen 17; Be provided with source region first kind trap 9 between the dense injection 7 of the said polycrystalline grid 22 and the source region first kind, can prevent that the raceway groove of source region structure one side from causing component failure because of disconnection.

Said interlayer dielectric layer 24 is arranged on the said SOI substrate surface; Said aluminium field plate 21 is arranged on the said interlayer dielectric layer 24 of said polycrystalline field plate 23 tops.The material of said interlayer dielectric layer 24 can be phosphorosilicate glass.Said aluminium field plate 21 is electrical connected with said source electrode.

Said interlayer dielectric layer 24 is covered on said polycrystalline grid 22 and the oxygen 17; The position is provided with the puncture voltage that aluminium field plate 21 improves device directly over phosphorosilicate glass 24 and polycrystalline field plate 23; And aluminium field plate 21 is to be connected with source electrode 18, can improve the voltage endurance capability of device through the position and the size of setting the aluminium field plate of rational deployment aluminium field plate.

In addition; Also comprise and pass the source terminal 18 that interlayer dielectric layer 24 is drawn the source electrode; Pass the drain terminal 20 that interlayer dielectric layer 24 is drawn drain electrode; Pass grid lead-out wire 19 that interlayer dielectric layer 24 draws grid etc., thereby improve structure based on the high-voltage metal oxide semiconductor pipe of SOI substrate.

Said high-voltage metal oxide semiconductor pipe based on the SOI substrate can be N type high-voltage MOS pipe or P type high-voltage MOS pipe; All refer to the N type for the then said first kind of N type metal-oxide-semiconductor; Said second type all refers to the P type; All refer to the P type for the then said first kind of P type metal-oxide-semiconductor, said second type all refers to the N type.Fig. 1 is an example with P type high-voltage MOS pipe, has represented the brief configuration sketch map.It is obvious that, and the first kind is changed to the N type in the structure, after second type is changed to the P type, demonstration be the structure of N type high-voltage MOS pipe, also within thought range of the present invention.

Fig. 2 be in one embodiment of the invention based on the manufacturing approach of the high-voltage metal oxide semiconductor pipe of SOI substrate, specifically may further comprise the steps:

Step S01: SOI is provided substrate, and in said SOI substrate, forms deep trench;

Step S02: in said SOI substrate, form the source region second type trap;

Step S03: carry out ion implantation technology, form drain region second type buffering area and the source region second type buffering area, the said source region second type buffering area is arranged in the said source region second type trap;

Step S04: carry out ion implantation technology, form drain region first kind trap and source region first kind trap, said drain region first kind trap is arranged in the said drain region second type buffering area, and said source region first kind trap is arranged in the said source region second type buffering area;

Step S05: close on forming an oxygen on the side of source region structure being positioned at of said drain structure;

Step S06: on the SOI substrate between said drain structure and the source region structure, form the Dual Gate Oxide structure; The thick grid oxygen and the thin grid oxygen that comprise adjacent setting; Said thin grid oxygen is arranged on dense injection region of the source region first kind and the dense injection region of second type, source region, and said thick grid oxygen is arranged between said oxygen and the said thin grid oxygen;

Step S07: on said thick grid oxygen and said oxygen, form grid structure, said grid structure comprises the polycrystalline grid and the polycrystalline field plate of adjacent setting, and said polycrystalline grid are positioned on the said thick grid oxygen, and said polycrystalline field plate is positioned on said the oxygen;

Step S08: carry out ion implantation technology, in the first kind trap of said drain region, form drain region first kind buffering area;

Step S09: carry out ion implantation technology; In the first kind buffering area of said drain region, form the dense injection region of the first kind, drain region, in the second type buffering area of said source region, form the dense injection region of the source region first kind and the dense injection region of second type, source region of adjacent setting;

Step S 10: deposition forms interlayer dielectric layer on said SOI substrate, and on the said interlayer dielectric layer above the said polycrystalline field plate, forms the aluminium field plate.

In conjunction with being embodiment with the P type high-voltage metal oxide semiconductor pipe based on the SOI substrate below Fig. 1 and Fig. 2, then the first kind is the P type, and second type is the N type.The detailed description manufacturing approach of the present invention of P type high-voltage MOS pipe in the following present embodiment, but the content that said manufacturing approach is not limited among the embodiment to be provided.

In step S01, the SOI substrate at first is provided, said SOI substrate comprises three layers: ground floor is common P type doped substrate sheet 1, and the crystal orientation does<100>, resistivity is the substrate slice of 10～20ohmcm, the second layer is the buried oxidation layer (BOX: Buried Oxide) that is positioned on the said P type of the ground floor doped substrate sheet 1; Buried oxidation layer 2 can be given birth to through thermal oxidation and formed, and preferable material is a silicon dioxide, and thickness range is 1～2um; The 3rd layer of top silicon layer 3 that mixes for the N type that on the said buried oxidation layer 2 of the second layer, is provided with; The effect of said top silicon layer 3 is similar to epitaxial loayer, and thickness is 5～20um, and concentration is 3 * 10 ¹⁵Cm ^-3～7 * 10 ¹⁵

Cm

^-33 three layers of growth successively from the bottom to top of the top silicon layer that said P type doped substrate sheet 1, buried oxidation layer 2 and N type mix.The SOI substrates that the top silicon layer 3 that is mixed by above-described P type doped substrate sheet 1, buried oxidation layer 2 and N type is formed jointly.

Then, in said SOI substrate, form deep trench; Detailed process is: at first at the top silicon layer 3 superficial growth silicon dioxide of said SOI substrate, apply one deck photoresist at this silica surface then, utilize mask aligner to carry out the photoetching of groove version again; Etch away the silicon dioxide of trench region subsequently; Remove photoresist again, after the completion, come the ditch groove with the anisotropy and the high selectivity technology of dry plasma etch; On top silicon layer 3, carve not only dark but also straight groove, remove the residual silicon dioxide of clean surface with the hydrofluoric acid corrosive liquid then.To said top silicon layer 3 finish deep plough groove etched after, carve good deep trench and filled up previous with backfilling process again, the technology of employing is full dielectric isolation technology, can thoroughly eliminate the parasitic latch-up that exists in the body silicon circuit in the prior art.The practical implementation way of backfilling process is based on the above-mentioned deep plough groove etched SOI substrate that finishes; The first thicker silicon dioxide 6 of one deck of in top silicon layer 3 surfaces and deep trench, growing simultaneously; Use the unadulterated high resistance polysilicon 5 of low-pressure chemical vapor phase deposition one deck again; Behind intact this floor height resistance polysilicon 5 of deposit, add the silicon dioxide 6 of having grown in the previous groove, thereby two-layer filler can all be filled full to groove.At last, said groove is carried out the plasma dry back carve, etch away the unadulterated high resistance polysilicon 5 on said top silicon layer surface, only etch away the most surperficial unadulterated polysilicon, the unadulterated polysilicon 5 in the groove has been retained.On above-mentioned silicon dioxide 6, apply one deck photoresist then; Utilize mask aligner to carry out the photoetching of groove protection version again; Covering protection is lived with photoresist above groove, uses the outer silicon dioxide of the clean groove of hydrofluoric acid corrosive liquid wet method rinsing subsequently, removes photoresist clean at last.Silicon dioxide 6 in the groove like this, under the protection of photoresist by complete preservation time.Till this step operation, just accomplished the full dielectric isolation process of the deep trench of SOI substrate.

In step S02, in said SOI substrate, form source region N type trap 11; The SOI substrate of the full dielectric isolation of accomplishing based on aforementioned preparation with deep trench; At top silicon layer 3 superficial growths one layer thickness is first silicon oxide layer of 20nm～50nm; Growth temperature is 800 ℃～900 ℃, and growth atmosphere is a wet oxygen, and growth time is 30～60 minutes; Then, on first silicon oxide layer of this 20nm～50nm, apply one deck photoresist, utilize mask aligner on lithographic mask layer, to open the zone that desire forms source region N type trap 11 then; Then, the regional implantation dosage that forms said source region N type trap 11 to desire is 1.0E12～6.0E12ions/cm ², and energy is the phosphonium ion of 60KeV～120KeV; Inject to finish the method for back, remove the photoresist on first silicon oxide layer of above-mentioned 20nm～50nm with wet etching; Then, in diffusion furnace tube, carry out high annealing, the annealing temperature of said high-temperature annealing process is 1000 ℃～1200 ℃; Annealing atmosphere is a nitrogen; Annealing time is 100～300 minutes, and is wherein preferable, and annealing temperature is 1100 ℃～1200 ℃; Annealing atmosphere is a nitrogen, and annealing time is 200～300 minutes.After accomplishing annealing, the concentration range of source region N type trap 11 is 8 * 10 ¹⁵Cm ^-3～4 * 10 ¹⁶Cm ^-3, wherein concentration is with 2 * 10 ¹⁶Cm ^-3Be the best.

In step S03, carry out ion implantation technology, form drain region N type buffering area 12 and source region N type buffering area 11, said source region N type buffering area 10 is arranged in said source region N type trap 11;

Continuation is gone up at first silicon oxide layer (not indicating among the figure) of top silicon layer 3 surperficial 20nm～50nm and is applied one deck photoresist; Utilize the said photoresist of mask aligner patterning; First silicon oxide layer with the zone that exposes source region N type buffering area 10 and drain region N type buffering area 12; First oxide layer can be in the process of follow-up dopant ion injection, and the top silicon layer 3 of the SOI substrate of protection below is injury-free; Then, the regional implantation dosage of N type buffering area 10 and drain region N type buffering area 12 is 2.0E12～8.0E12ions/cm in the source region ²And energy is the phosphonium ion of 60KeV～120KeV; Inject to finish the method for removing photoresist with wet method in the back, remove the photoresist above the silicon dioxide of above-mentioned 20nm～50nm; In diffusion furnace tube, carry out high annealing, the annealing temperature of said high-temperature annealing process is 1000 ℃～1200 ℃, and annealing atmosphere is a nitrogen; Annealing time is 100～300 minutes, and is wherein preferable, and annealing temperature is 1100 ℃～1200 ℃; Annealing atmosphere is a nitrogen; Annealing time is 100～200 minutes, and after the completion annealing, the concentration range of source region N type buffering area 10 and drain region N type buffering area 12 is 2 * 10 ¹⁶Cm ^-3～6 * 10 ¹⁶Cm ^-3, wherein the concentration of source region N type buffering area 10 and drain region N type buffering area 12 is with 4 * 10 ¹⁶Cm ^-3Be the best.

In step S04, carry out ion implantation technology, form drain region P type trap 14 and source region P type trap 9, said drain region P type trap 14 is arranged in said drain region N type buffering area 10, and said source region P type trap 9 is arranged in said source region N type buffering area 12;

Continuation applies one deck photoresist on first silicon oxide layer of top silicon layer 3 surperficial said 20nm～50nm, utilize the said photoresist of mask aligner patterning, with first silicon oxide layer in the zone that exposes source region P type trap 9 and drain region P type trap 14; The regional implantation dosage of P type trap 9 and drain region P type trap 14 is 5.0E12～3E13ions/cm in above-mentioned source region ²And energy is the boron ion of 40KeV～100KeV; Inject to finish the method for removing photoresist with wet method in the back, remove the photoresist of surface pattern on first silicon oxide layer of above-mentioned 20nm～50nm; Then, in diffusion furnace tube, carry out high annealing, the annealing temperature of said high-temperature annealing process is 1000 ℃～1200 ℃; Annealing atmosphere is a nitrogen, and annealing time is 100～300 minutes, and is wherein preferable; Annealing temperature is 1100 ℃～1200 ℃, and annealing atmosphere is the nitrogen oxygen atmosphere that nitrogen adds little oxygen, and annealing time is 100～200 minutes; After accomplishing annealing, the concentration range of source region P type trap 9 and drain region P type trap 14 is 6 * 10 ¹⁶Cm ^-3～1 * 10 ¹⁷Cm ^-3, and concentration is with 8 * 10 ¹⁶Cm ^-3Be the best.

In step S05, close on and form an oxygen 17 on the side of source region structure being positioned at of said drain structure; At first use first silicon oxide layer of the clean top silicon layer of the diluted hydrofluoric acid rinsing said 20nm～50nm in surface; The layer thickness that regrows is second silicon oxide layer of 30nm～60nm; Growth temperature is 850 ℃～1000 ℃, and growth atmosphere is a wet oxygen, and growth time is 30～60 minutes; Deposit one layer thickness is the silicon nitride layer of 100nm～300nm on the silicon dioxide of said 30nm～60nm, adopts low-pressure chemical vapor phase deposition technology, and deposition temperature is 700 ℃～800 ℃; Then; On the silicon nitride of this 100nm～300nm, apply one deck photoresist; Utilize mask aligner to form the photoresist of patterning; There is PMOS to manage second silicon oxide layer in the zone outside source region structure, drain structure and the double-gate structure with exposure, lives source region structure, drain structure and double-gate structure with the glue protection; Etch away the silicon nitride of the 100nm～300nm outside the active area with plasma method at dried quarter; Remove the photoresist of source region structure, drain structure and double-gate structure with the combination ashing method that dry method is removed photoresist and wet method is removed photoresist; In diffusion furnace tube, grow 600nm～1500nm the silicon dioxide material the field oxygen, growth temperature is 850 ℃～1000 ℃, growth atmosphere is a wet oxygen, growth time is 280～400 minutes.

In step S06; On the SOI substrate between said drain structure and the source region structure, form the Dual Gate Oxide structure; The thick grid oxygen 16 and thin grid oxygen 25 that comprise adjacent setting; Said thin grid oxygen 25 is arranged on dense injection region 7 of source region P type and the dense injection region 8 of N type, and said thick grid oxygen 16 is arranged between said oxygen 17 and the said thin grid oxygen 25;

On top silicon layer 3, apply one deck photoresist, utilize mask aligner to form the photoresist of patterning, with the silicon nitride layer in the zone that exposes thick grid oxygen 16; Etch away the silicon nitride in the zone of thick grid oxygen 16 with plasma method at dried quarter; Remove the photoresist outside the zone of thick grid oxygen 16 of high voltage PMOS pipe with the remove photoresist combination ashing method that removes photoresist with wet method of dry method; In grid oxygen boiler tube, the grow thick grid oxygen 16 of 300nm～800nm, growth temperature is 900 ℃～1100 ℃, and that adopts chloride gaseous state thing mixes the growth of oxychloride technology, and growth time is 50～100 minutes; Then, do pre-treatment with diluted hydrofluoric acid earlier, slight rinsing 10 seconds; Again with 120 ℃～200 ℃ hot phosphoric acid all remove the remaining silicon nitride on top silicon layer 3 surfaces clean thereafter; Add No. 1 liquid rinsing 120 seconds with diluted hydrofluoric acid then, remove second silicon oxide layer of the beneath 30nm～60nm of original silicon nitride; Grow in the most laggard grid oxygen boiler tube thin grid oxygen 25 of 12nm～36nm, the growth temperature of said thin grid oxygen 25 is 800 ℃～950 ℃, and that adopts chloride gaseous state thing mixes the growth of oxychloride technology, and growth time is 20～60 minutes; Thereby formed the Dual Gate Oxide structure of high voltage PMOS pipe.

In step S07, on said thick grid oxygen and said oxygen, form grid structure, said grid structure comprises the polycrystalline grid and the polycrystalline field plate of adjacent setting, and said polycrystalline grid are positioned on the said thick grid oxygen, and said polycrystalline field plate is positioned on said the oxygen;

Utilize method deposit one layer thickness on top silicon layer 3 surfaces of low-pressure chemical vapor phase deposition to be the polysilicon layer of 250nm～600nm; Implantation dosage is 5.0E15～1.0E16ions/cm in the polysilicon layer of this 250nm～600nm ²And energy is the phosphonium ion of 40KeV～100KeV; Then; Apply one deck photoresist at above-mentioned polysilicon surface, utilize mask aligner on lithographic mask layer, to protect firmly grid structure zone, above-mentioned area of grid comprises the zone of polycrystalline grid 22 and polycrystalline field plate 23; And polycrystalline grid 22 and polycrystalline field plate 23 be short circuit together; Just distribution position is different, and polycrystalline grid 22 zones are positioned on the thick grid oxygen 16, and polycrystalline field plate 23 zones are positioned on the field oxygen 17 that links to each other with thick grid oxygen 16; Etch away the polysilicon in the zone outside the grid structure zone with plasma method at dried quarter; At last, remove the photoresist of grid structure with the remove photoresist combination ashing method that removes photoresist with wet method of dry method.

In step S08, carry out ion implantation technology, in said drain region P type trap 13, form drain region P type buffering area 14; At the 3rd silicon oxide layer of top silicon layer 3 superficial growth one deck 20nm～50nm, growth temperature is 800 ℃～900 ℃, and growth atmosphere is a wet oxygen, and growth time is 30～60 minutes; Then, on the 3rd silicon oxide layer of this 20nm～50nm, apply one deck photoresist, the photoresist that utilizes mask aligner to form patterning forms the 3rd silicon oxide layer in the zone of drain region P type buffering area 14 with desire on the exposure drain structure; Then, the regional implantation dosage at P type buffering area 14 is 3.0E13～1.3E14ions/cm ²And energy is the boron ion of 40KeV～100KeV; Inject and finish the method for removing photoresist with wet method in the back, remove remaining photoresist above above-mentioned 20nm～50nm the 3rd silicon oxide layer; Then, in diffusion furnace tube, carry out high annealing, the annealing temperature of said high-temperature annealing process is 1000 ℃～1200 ℃; Annealing atmosphere is a nitrogen; Annealing time is 100～300 minutes, and is wherein preferable, and annealing temperature is 1000 ℃～1150 ℃; Annealing atmosphere is a nitrogen, and annealing time is 100～200 minutes.After accomplishing annealing, the concentration range of said drain region P type buffering area 14 is 3 * 10 ¹⁷Cm ^-3～9 * 10 ¹⁷Cm ^-3, and concentration is with 6 * 10 ¹⁷Cm ^-3Be the best.

In step S09, carry out ion implantation technology, in said P type buffering area 14, form the dense injection region 15 of P type, drain region, in said source region N type buffering area 10, form the dense injection region 7 of source region P type and the dense injection region 8 of source region N type of adjacent setting;

At the 4th silicon oxide layer of top silicon layer 3 superficial growth one deck 10nm～30nm, growth temperature is 800 ℃～900 ℃, and growth atmosphere is dried oxygen, and growth time is 20～60 minutes; On the 4th silicon oxide layer of said 10nm～30nm, applying one deck photoresist utilizes mask aligner on lithographic mask layer, to open the zone that desire forms the dense injection region 8 of N type, source region; The regional implantation dosage of the dense injection region 8 of N type is 4.0E15～1.0E16ions/cm in the source region ², and energy is the arsenic ion of 80KeV～120KeV; Then, remove the photoresist on the 4th silicon oxide layer of 10nm～30nm with the remove photoresist combination ashing method that removes photoresist with wet method of dry method; Then, in diffusion furnace tube, carry out high annealing, annealing temperature is 900 ℃～1000 ℃, and annealing atmosphere is the nitrogen oxygen atmosphere that nitrogen adds little oxygen, and annealing time is 30～60 minutes, and after the completion annealing, the concentration range of the dense injection region 8 of N type, source region is 1 * 10 ²⁰Cm ^-3～5 * 10 ²⁰Cm ^-3, and concentration is with 3 * 10 ²⁰Cm ^-3Be the best; On four silicon oxide layer of said 10nm～30nm apply one deck photoresist, utilize mask aligner on lithographic mask layer, to open the 4th silicon oxide layer that desire forms the zone of the dense injection region of the first kind, source region thereafter; In the zone of dense injection region 7 of P type, desire formation source region and the dense injection region 15 of P type, drain region, implantation dosage is that 1.0E15～5.0E15ions/cm2 and energy are the boron difluoride ion of 80KeV～120KeV; Remove the photoresist on the 4th silicon oxide layer of 10nm～30nm with the remove photoresist combination ashing method that removes photoresist with wet method of dry method then; Then in diffusion furnace tube, carry out high annealing, annealing temperature is 900 ℃～1000 ℃, and annealing atmosphere is a nitrogen, and annealing time is 30～60 minutes, and after the completion annealing, the concentration range of the dense injection region 7 of P type, source region is 4 * 10 ¹⁹Cm ^-3～1 * 10 ²⁰Cm ^-3, wherein concentration is with 7 * 10 ¹⁹Cm ^-3Be the best, the concentration range of the dense injection region 15 of P type, said drain region also is 4 * 10 ¹⁹Cm ^-3～1 * 10 ²⁰Cm ^-3, wherein concentration is with 7 * 10 ¹⁹Cm ^-3Be the best.

Technology manufacture process based on the high-voltage P-type metal oxide transistor of SOI substrate after completing steps S01～step S09 is accomplished basically; Again in step S10; Deposition forms interlayer dielectric layer on said SOI substrate; And in dielectric layer, forming contact hole, metal interconnecting wires, metallic aluminium field plate on said interlayer dielectric layer, aluminium field plate are positioned at said polycrystalline field plate top; Form chip surface passivation protection layer at last, accomplish whole preparation process based on the high-voltage P-type metal oxide transistor of SOI substrate.

It is obvious that, and the first kind is changed to the N type in structure, after second type is changed to the P type, and N type transposition P type during promptly the foregoing description is described, P type transposition N type, what then show is the structure of N type high-voltage MOS pipe, also within thought range of the present invention.

Though the present invention discloses as above with preferred embodiment; Right its is not in order to limit the present invention; Has common knowledge the knowledgeable in the technical field under any; Do not breaking away from the spirit and scope of the present invention, when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking claims person of defining.

Claims

1. the high-voltage metal oxide semiconductor pipe based on the SOI substrate comprises,

The SOI substrate;

Deep trench is arranged in the said SOI substrate;

Drain structure; Be arranged in the said SOI substrate; Said drain structure ecto-entad comprises drain region first kind trap, drain region first kind buffering area and the dense injection region of the drain region first kind that drain region second type buffering area and concentration increase progressively successively, and the dense injection region of the first kind, said drain region is as drain electrode;

The source region structure; Be arranged in the said SOI substrate; Comprise the source region second type trap, be arranged in the dense injection region of the source region first kind and the dense injection region of second type, source region of the source region second type buffering area of the source region second type trap, the source region first kind trap that is arranged in the said source region second type buffering area and adjacent setting; Source region first kind trap links to each other with the dense injection region of the first kind, said source region, and dense injection region of the first kind, said source region and the dense injection region of second type, source region are jointly as the source electrode;

Field oxygen is arranged on the said drain structure, is positioned at a side of closing on the source region structure;

Grid oxygen is arranged between said oxygen and the dense injection of the source region first kind;

Grid comprises the polycrystalline grid and the polycrystalline field plate of adjacent setting, and said polycrystalline grid are arranged on the said grid oxygen, and said polycrystalline field plate is arranged on said the oxygen;

Interlayer dielectric layer is arranged on the said SOI substrate surface.

2. the high-voltage metal oxide semiconductor pipe based on the SOI substrate as claimed in claim 1 is characterized in that the concentration of the said drain region second type buffering area is 2 * 10 ¹⁶Cm ^-3～6 * 10 ¹⁶Cm ^-3, the concentration of said drain region first kind trap is 6 * 10 ¹⁶Cm ^-3～1 * 10 ¹⁷Cm ^-3, the concentration of said drain region first kind buffering area is 3 * 10 ¹⁷Cm ^-3～9 * 10 ¹⁷Cm ^-3, the concentration of the dense injection region of the first kind, said drain region is 4 * 10 ¹⁹Cm ^-3～1 * 10 ²⁰Cm ^-3

3. the high-voltage metal oxide semiconductor pipe based on the SOI substrate as claimed in claim 1 is characterized in that the concentration of the said source region second type trap is 8 * 10 ¹⁵Cm ^-3～4 * 10 ¹⁶Cm ^-3, the concentration of the said source region second type buffering area is 2 * 10 ¹⁶Cm ^-3～6 * 10 ¹⁶Cm ^-3, the concentration of said source region first kind trap is 6 * 10 ¹⁶Cm ^-3～1 * 10 ¹⁷Cm ^-3, the concentration of the dense injection region of the first kind, said source region is 4 * 10 ¹⁹Cm ^-3～1 * 10 ²⁰Cm ^-3, the concentration of the dense injection region of second type, said source region is 1 * 10 ²⁰Cm ^-3～5 * 10 ²⁰Cm ^-3

4. the high-voltage metal oxide semiconductor pipe based on the SOI substrate as claimed in claim 1 is characterized in that the thickness of said oxygen is 600nm～1500nm.

5. the high-voltage metal oxide semiconductor pipe based on the SOI substrate as claimed in claim 1 is characterized in that; Said grid oxygen adopts the Dual Gate Oxide structure; The thin grid oxygen and the thick grid oxygen that comprise adjacent setting; Said thin grid oxygen is arranged on dense injection region of the source region first kind and the dense injection region of second type, source region, and said thick grid oxygen is arranged between said oxygen and the said thin grid oxygen.

6. the high-voltage metal oxide semiconductor pipe based on the SOI substrate as claimed in claim 5 is characterized in that the thickness of said thick grid oxygen is 300nm～800nm, and the thickness of said thin grid oxygen is 12nm～36nm.

7. the high-voltage metal oxide semiconductor pipe based on the SOI substrate as claimed in claim 1 is characterized in that said SOI substrate comprises the top silicon layer of substrate slice, buried oxidation layer and second type of the first kind from bottom to up successively.

8. the high-voltage metal oxide semiconductor pipe based on the SOI substrate as claimed in claim 1 is characterized in that the degree of depth of said deep trench is 5um～20um.

9. the high-voltage metal oxide semiconductor pipe based on the SOI substrate as claimed in claim 1 is characterized in that having the filler that comprises silicon dioxide and unadulterated polysilicon in the said deep trench.

10. the high-voltage metal oxide semiconductor pipe based on the SOI substrate as claimed in claim 1 is characterized in that, is provided with the aluminium field plate on the said interlayer dielectric layer of said polycrystalline field plate top, and said aluminium field plate and said source electrode are electrical connected.

11. like any described high-voltage metal oxide semiconductor pipe based on the SOI substrate in the claim 1 to 10, it is characterized in that the said first kind is the P type, said second type is the N type; Or the said first kind is the N type, and said second type is the P type.

12. the manufacturing approach based on the high-voltage metal oxide semiconductor pipe of SOI substrate comprises,

SOI is provided substrate, and in said SOI substrate, forms deep trench;

In said SOI substrate, form the source region second type trap;

Deposition forms interlayer dielectric layer on said SOI substrate.

13. the manufacturing approach of the high-voltage metal oxide semiconductor pipe based on the SOI substrate as claimed in claim 12 is characterized in that the concentration of the said drain region second type buffering area is 2 * 10 ¹⁶Cm ^-3～6 * 10 ¹⁶Cm ^-3, the concentration of said drain region first kind trap is 6 * 10 ¹⁶Cm ^-3～1 * 10 ¹⁷Cm ^-3, the concentration of said drain region first kind buffering area is 3 * 10 ¹⁷Cm ^-3～9 * 10 ¹⁷Cm ^-3, the concentration of the dense injection region of the first kind, said drain region is 4 * 10 ¹⁹Cm ^-3～1 * 10 ²⁰Cm ^-3

14. the manufacturing approach of the high-voltage metal oxide semiconductor pipe based on the SOI substrate as claimed in claim 12 is characterized in that the concentration of the said source region second type trap is 8 * 10 ¹⁵Cm ^-3～4 * 10 ¹⁶Cm ^-3, the concentration of the said source region second type buffering area is 2 * 10 ¹⁶Cm ^-3～6 * 10 ¹⁶Cm ^-3, the concentration of said source region first kind trap is 6 * 10 ¹⁶Cm ^-3～1 * 10 ¹⁷Cm ^-3, the concentration of the dense injection region of the first kind, said source region is 4 * 10 ¹⁹Cm ^-3～1 * 10 ²⁰Cm ^-3, the concentration of the dense injection region of second type, said source region is 1 * 10 ²⁰Cm ^-3～5 * 10 ²⁰Cm ^-3

15. the manufacturing approach of the high-voltage metal oxide semiconductor pipe based on the SOI substrate as claimed in claim 12 is characterized in that, the thickness of said oxygen is 600nm～1500nm.

16. the manufacturing approach of the high-voltage metal oxide semiconductor pipe based on the SOI substrate as claimed in claim 12 is characterized in that the degree of depth of said deep trench is 5um～20um.

17. the manufacturing approach of the high-voltage metal oxide semiconductor pipe based on the SOI substrate as claimed in claim 12 is characterized in that having the filler that comprises silicon dioxide and unadulterated polysilicon in the said deep trench.

18. the manufacturing approach of the high-voltage metal oxide semiconductor pipe based on the SOI substrate as claimed in claim 12 is characterized in that, is provided with the aluminium field plate on the said interlayer dielectric layer of said polycrystalline field plate top, said aluminium field plate and said source electrode are electrical connected.

19. the manufacturing approach of the high-voltage metal oxide semiconductor pipe based on the SOI substrate as claimed in claim 12; It is characterized in that; In said SOI substrate, form before the step of the source region second type trap, comprising: growth regulation one silica layer on said SOI substrate; Said first silicon oxide layer is after the step that forms said drain region first kind trap and source region first kind trap, and the step of said oxygen of formation is removed before.

20. the manufacturing approach of the high-voltage metal oxide semiconductor pipe based on the SOI substrate as claimed in claim 19 is characterized in that, the step that forms the source region second type trap in the said SOI substrate comprises:

On said first silicon oxide layer, form the photoresist of patterning, expose first silicon oxide layer that desire forms the zone of the source region second type trap;

Dopant ion is injected in the zone that forms the source region second type trap to desire, and said dopant ion is a phosphonium ion, and implantation dosage is 1.0E12～6.0E12ions/cm ², the injection energy is 60KeV～120KeV;

Remove the photoresist of patterning;

Carry out high-temperature annealing process.

21. the manufacturing approach of the high-voltage metal oxide semiconductor pipe based on the SOI substrate as claimed in claim 19 is characterized in that, the step that forms drain region second type buffering area and the source region second type buffering area comprises:

On said first silicon oxide layer, form the photoresist of patterning, expose first silicon oxide layer that desire forms the zone of drain region second type buffering area and the source region second type buffering area;

Dopant ion is injected in the zone that forms drain region second type buffering area and the source region second type buffering area to desire, and said dopant ion is a phosphonium ion, and implantation dosage is 2.0E12～8.0E12ions/cm ², the injection energy is 60KeV～120KeV;

Remove the photoresist of patterning;

Carry out high-temperature annealing process.

22. the manufacturing approach of the high-voltage metal oxide semiconductor pipe based on the SOI substrate as claimed in claim 19 is characterized in that, the step that forms drain region first kind trap and source region first kind trap comprises:

On said first silicon oxide layer, form the photoresist of patterning, expose first silicon oxide layer that desire forms the zone of drain region first kind trap and source region first kind trap;

Dopant ion is injected in the zone that forms drain region first kind trap and source region first kind trap to desire, and said dopant ion is the boron ion, and implantation concentration is 5.0E12～3E13ions/cm ², the injection energy is 40KeV～100KeV;

Remove the photoresist of patterning;

Carry out high-temperature annealing process.

23. manufacturing approach like any described high-voltage metal oxide semiconductor pipe based on the SOI substrate in the claim 20 to 22; It is characterized in that; The annealing temperature of said high-temperature annealing process is 1000 ℃～1200 ℃, and annealing atmosphere is a nitrogen, and annealing time is 100～300 minutes.

24. the manufacturing approach of the high-voltage metal oxide semiconductor pipe based on the SOI substrate as claimed in claim 12; It is characterized in that, comprise between the step of formation drain region first kind trap, source region first kind trap and a formation oxygen: on said SOI substrate, form second silicon oxide layer and silicon nitride layer successively.

25. the manufacturing approach of the high-voltage metal oxide semiconductor pipe based on the SOI substrate as claimed in claim 24 is characterized in that, the step that forms an oxygen comprises:

On said silicon nitride layer, form the photoresist of patterning, expose desire and form a silicon nitride layer in oxygen zone;

The said silicon nitride layer of etching exposes second silicon oxide layer that desire forms the zone of an oxygen;

Remove the photoresist of patterning;

On second silicon oxide layer that exposes, form said oxygen.

26. the manufacturing approach of the high-voltage metal oxide semiconductor pipe based on the SOI substrate as claimed in claim 24; It is characterized in that; Said grid oxygen adopts the Dual Gate Oxide structure; The thin grid oxygen and the thick grid oxygen that comprise adjacent setting, said thin grid oxygen are arranged on dense injection region of the source region first kind and the dense injection region of second type, source region, and said thick grid oxygen is arranged between said oxygen and the said thin grid oxygen; The step of wherein said thick grid oxygen comprises:

On said silicon nitride layer, form the photoresist of patterning, expose the silicon nitride layer that desire forms thick grid oxygen zone;

The said silicon nitride layer of etching exposes second silicon oxide layer that desire forms thick grid oxygen zone;

Remove the photoresist of patterning;

Remove second silicon oxide layer with the hydrofluoric acid wet method, expose the SOI substrate that desire forms thick grid oxygen zone;

On the SOI substrate that exposes, form said thick grid oxygen; The step of said thin grid oxygen comprises:

Wet method is removed the silicon nitride layer on the said SOI substrate;

Wet method is removed said second silicon oxide layer, exposes the SOI substrate that desire forms thin grid oxygen zone;

On the SOI substrate that exposes, form said thin grid oxygen.

27. the manufacturing approach of the high-voltage metal oxide semiconductor pipe based on the SOI substrate as claimed in claim 26; It is characterized in that; The thickness of said thick grid oxygen is 300nm～800nm, adopts and mixes the formation of oxychloride method in the boiler tube, and growth temperature is 900 ℃～1100 ℃; Adopt the oxychloride technology of mixing of chloride gaseous state thing to grow, growth time is 50～100 minutes; The thickness of said thin grid oxygen is 12nm～36nm, adopts and mixes the formation of oxychloride method in the boiler tube, and growth temperature is 800 ℃～950 ℃, adopts the oxychloride technology of mixing of chloride gaseous state thing to grow, and growth time is 20～60 minutes.

28. the manufacturing approach like any described high-voltage metal oxide semiconductor pipe based on the SOI substrate in claim 12 to 22 or 24 to 27 is characterized in that the said first kind is the P type, said second type is the N type; Or the said first kind is the N type, and said second type is the P type.