CN102586761B - Vortex chamber lids for atomic layer deposition - Google Patents
Vortex chamber lids for atomic layer deposition Download PDFInfo
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- CN102586761B CN102586761B CN201210033178.7A CN201210033178A CN102586761B CN 102586761 B CN102586761 B CN 102586761B CN 201210033178 A CN201210033178 A CN 201210033178A CN 102586761 B CN102586761 B CN 102586761B
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- 238000000231 atomic layer deposition Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 claims abstract description 492
- 238000000034 method Methods 0.000 claims abstract description 110
- 230000008569 process Effects 0.000 claims abstract description 55
- 238000009826 distribution Methods 0.000 claims description 69
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 abstract description 52
- 239000000463 material Substances 0.000 abstract description 50
- 230000002093 peripheral effect Effects 0.000 abstract description 43
- 239000007789 gas Substances 0.000 description 1516
- 238000010926 purge Methods 0.000 description 208
- 239000000376 reactant Substances 0.000 description 146
- 238000006243 chemical reaction Methods 0.000 description 86
- 239000002243 precursor Substances 0.000 description 79
- 239000012530 fluid Substances 0.000 description 72
- 238000010438 heat treatment Methods 0.000 description 57
- 238000001816 cooling Methods 0.000 description 55
- 239000010410 layer Substances 0.000 description 53
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 51
- 230000008021 deposition Effects 0.000 description 42
- 238000000429 assembly Methods 0.000 description 39
- 230000000712 assembly Effects 0.000 description 39
- 229910052715 tantalum Inorganic materials 0.000 description 34
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 34
- 239000012159 carrier gas Substances 0.000 description 29
- 239000012707 chemical precursor Substances 0.000 description 29
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 29
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 28
- 229910052757 nitrogen Inorganic materials 0.000 description 25
- 229910052782 aluminium Inorganic materials 0.000 description 23
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 23
- 239000004411 aluminium Substances 0.000 description 22
- 239000010935 stainless steel Substances 0.000 description 20
- 229910001220 stainless steel Inorganic materials 0.000 description 20
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 16
- 230000007246 mechanism Effects 0.000 description 16
- 238000005137 deposition process Methods 0.000 description 15
- 238000009833 condensation Methods 0.000 description 14
- 230000005494 condensation Effects 0.000 description 14
- 229910052759 nickel Inorganic materials 0.000 description 14
- 150000001875 compounds Chemical class 0.000 description 13
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 13
- 230000005251 gamma ray Effects 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 229910045601 alloy Inorganic materials 0.000 description 10
- 239000000956 alloy Substances 0.000 description 10
- 125000004429 atom Chemical group 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 9
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 9
- 230000008859 change Effects 0.000 description 9
- 239000003507 refrigerant Substances 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 229910052786 argon Inorganic materials 0.000 description 8
- 238000010276 construction Methods 0.000 description 8
- 238000000746 purification Methods 0.000 description 8
- 238000003860 storage Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 7
- 238000007664 blowing Methods 0.000 description 7
- 239000006227 byproduct Substances 0.000 description 7
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 230000001186 cumulative effect Effects 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 238000007747 plating Methods 0.000 description 7
- 238000005498 polishing Methods 0.000 description 7
- 239000002356 single layer Substances 0.000 description 7
- 238000001149 thermolysis Methods 0.000 description 7
- 229910000838 Al alloy Inorganic materials 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- 229910000831 Steel Inorganic materials 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000005242 forging Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000001179 sorption measurement Methods 0.000 description 6
- 239000010959 steel Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- OMFXVFTZEKFJBZ-HJTSIMOOSA-N corticosterone Chemical compound O=C1CC[C@]2(C)[C@H]3[C@@H](O)C[C@](C)([C@H](CC4)C(=O)CO)[C@@H]4[C@@H]3CCC2=C1 OMFXVFTZEKFJBZ-HJTSIMOOSA-N 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 239000013049 sediment Substances 0.000 description 5
- 238000005728 strengthening Methods 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 210000000080 chela (arthropods) Anatomy 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- -1 tungsten nitride Chemical class 0.000 description 4
- 230000007306 turnover Effects 0.000 description 4
- 239000002699 waste material Substances 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 239000012809 cooling fluid Substances 0.000 description 3
- 150000004985 diamines Chemical class 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 241001012508 Carpiodes cyprinus Species 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010574 gas phase reaction Methods 0.000 description 2
- 230000007773 growth pattern Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N monobenzene Natural products C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- GEXJFIOPGAASTP-UHFFFAOYSA-N $l^{1}-azanylethane Chemical compound CC[N] GEXJFIOPGAASTP-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- UZBQIPPOMKBLAS-UHFFFAOYSA-N diethylazanide Chemical compound CC[N-]CC UZBQIPPOMKBLAS-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- LIWAQLJGPBVORC-UHFFFAOYSA-N ethylmethylamine Chemical compound CCNC LIWAQLJGPBVORC-UHFFFAOYSA-N 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000026030 halogenation Effects 0.000 description 1
- 238000005658 halogenation reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- LVTJOONKWUXEFR-FZRMHRINSA-N protoneodioscin Natural products O(C[C@@H](CC[C@]1(O)[C@H](C)[C@@H]2[C@]3(C)[C@H]([C@H]4[C@@H]([C@]5(C)C(=CC4)C[C@@H](O[C@@H]4[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@@H](O)[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@H](CO)O4)CC5)CC3)C[C@@H]2O1)C)[C@H]1[C@H](O)[C@H](O)[C@H](O)[C@@H](CO)O1 LVTJOONKWUXEFR-FZRMHRINSA-N 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45506—Turbulent flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45582—Expansion of gas before it reaches the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
A vortex chamber lids for atomic layer deposition. Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber for processing substrates is provided which includes a chamber lid assembly containing a centrally positioned gas dispersing channel, wherein a converging portion of the gas dispersing channel tapers towards a central axis of the gas dispersing channel and a diverging portion of the gas dispersing channel tapers away from the central axis. The chamber lid assembly further contains a tapered bottom surface extending from the diverging portion of the gas dispersing channel to a peripheral portion of the chamber lid assembly, wherein the tapered bottom surface is shaped and sized to substantially cover the substrate and two conduits are coupled to gas inlets within the converging portion of the gas dispersing channel and positioned to provide a circular gas flow through the gas dispersing channel.
Description
Background of invention
description of Related Art
Production submicron reliably and less feature (feature) are for manufacturing one of gordian technique of lower super large-scale integration (VLSI) from generation to generation and super ultra large scale integrated circuit (ULSI) semiconducter device.But along with circuit engineering is pushed the limit to, the interconnect architecture dwindling (interconnect) size of VLSI and ULSI technology also needs to possess extra processing power.The multiple level interconnect architecture that is positioned at technological core needs accurately to process the feature of high aspect ratio, for example through hole (via) or other is interconnected.Form reliably these interconnected to completing VLSI and ULSI and being very important to continuous increase current densities and each substrate quality.
Along with current densities increases, the width of dielectric materials interconnect architectures such as through hole, groove, contact and further feature and between described interconnection structure will dwindle into 45nm to 32nm, and the thickness of dielectric layer still remains unchanged substantially, so can improve the depth-to-width ratio of feature.Many conventional deposition are difficult to fill depth-to-width ratio and exceed 4: 1, and especially depth-to-width ratio exceedes the submicrometer structure of 10: 1.Therefore still need, ongoing effort forms the sub-micron features of essentially no hole and seamless high aspect ratio.
Ald (ALD) is for attempting the deposition technique for deposited material layer in the feature of high aspect ratio.One example of ALD technique comprises subsequent pulses introducing gas.For example, subsequent pulses introduce a working cycle of gas can comprise pulse introduce the first reactant gases, then pulse introduce Purge gas (purge gas) and/or use vacuum pump, then the second reactant gases is introduced in pulse, then pulse is introduced Purge gas and/or used vacuum pump.Term used herein " gas " is defined as and comprises pure gas or multiple gases.Subsequent pulses introduces the first independent reactant gases and the second reactant gases may cause the reactant individual layer of substrate surface to absorb from limit in turn, so that each working cycle forms single layer of material.Working cycle can be repeated until deposition material reaches pre-determined thickness.The first reactant gases is introduced in pulse and pulse is introduced the pulse introducing Purge gas between the second reactant gases and/or uses vacuum pump can reduce the excessive response deposits yields gas-phase reaction of residual chamber.
Therefore, need to be used for equipment and the method for during ALD technique deposition material film.
Invention field
Embodiments of the present invention relate generally to for the equipment of ald and method.More particularly, embodiments of the present invention relate to gas transportation facilities and the method for the improvement of ald.
Summary of the invention
Embodiments of the present invention relate at uniform deposition material during ald (ALD) technique to equipment and method on substrate.The high homogeneity of deposition material can be given the credit to substrate contact and be arrived the deposition gases of air-flow pattern (as eddy current pattern) ringwise.In one embodiment, treatment chamber comprises chamber cap assembly, and this chamber cap assembly comprises expansion passage in putting and from expanding passage toward the tapered taper of chamber cap assembly peripheral part bottom surface.Taper bottom surface is through configuration and adjust size substantially to cover substrate continuing surface.Another chamber embodiment comprises chamber cap assembly, this chamber cap assembly comprise put in and tool conflux and distribute road with the gas of runner.Another chamber embodiment comprises chamber cap assembly, and this chamber cap assembly comprises at least two around the gas passage that expands passage.Multiple entrances are by extending into expansion passage from each gas passage, and described multiple entrance is set to provide and spreads all over the annular steam pattern that expands passage.
In one embodiment, the invention provides a kind of chamber for the treatment of substrate, described chamber comprises a substrate support that comprises substrate continuing surface and chamber cap assembly.Chamber cap assembly distributes road and taper bottom surface at the middle portion air inclusion of chamber cap assembly, wherein gas distributes the portion of confluxing in road to distribute the central shaft in road to be tapered toward gas, the distributary division in gas distribution road deviates from central shaft and is tapered, taper bottom surface distributes the distributary division in road to extend to peripheral part of chamber cap assembly from gas, and taper bottom surface is through configuration and adjust size with substrate continuing surface substantially, chamber cap assembly also comprises the first conduit and the second conduit, the first conduit is coupled to the first gas inlet that gas distributes road to conflux in portion, the second conduit is coupled to the second gas inlet that gas distributes road to conflux in portion, wherein the first conduit and the second conduit are set to provide the annular steam pattern that spreads all over gas distribution road.
In one example, the first conduit and the second conduit arrange independently with guiding gas and distribute the conflux gas at inner face place of portion of road.The flow pattern that annular steam pattern comprises has eddy current, spiral, spirals, curling, distortion, coiling, whirlpool, their derivative pattern or their combination pattern.In some instances, annular steam pattern distributes the central shaft in road expand at least about 1 circle round gas, is preferably round gas and distributes the central shaft in road to expand that approximately 1.5 circles, approximately 2 circles, approximately 3 circles, approximately 4 enclose or multi-turn more.
In some embodiments, the first valve couples the first conduit and second valve couples the second conduit, and the first gas source is that fluid is communicated with the first valve, and the second gas source is that fluid is communicated with second valve.It is approximately 2 seconds or still less that the first valve and second valve can make the burst length of atom layer deposition process, for example, in the scope of approximately 0.05 second to approximately 0.5 second.In other example, the first conduit and the second conduit obtain annular steam with angle setting more than central shaft 0 degree from gas distribution road independently of one another.
In one example, can to comprise volume be about 3000cm to treatment chamber
3or less reaction zone, wherein reaction zone is between taper bottom surface and substrate continuing surface.Other example provides volume to can be about 1500cm
3or less, for example about 600cm
3or less.
In another embodiment, the invention provides a kind of chamber for the treatment of substrate, described chamber comprises chamber cap assembly, the gas that this chamber cap assembly comprises the middle portion that is positioned at chamber cap assembly distributes road, the first conduit, the second conduit, the first valve and second valve, the portion of confluxing that wherein gas distributes road distributes the central shaft in the road gas that is tapered to distribute the distributary division in road to deviate from central shaft to be tapered toward gas, the first conduit is coupled to the first gas inlet that gas distributes road to conflux in portion, the second conduit is coupled to the second gas inlet that gas distributes road to conflux in portion, wherein the first conduit and the second conduit are set to provide air-flow pattern, the first valve couples the first conduit and second valve couples the second conduit, wherein can to make the burst length of atom layer deposition process be approximately 2 seconds or still less for the first valve and second valve.
In one example, chamber cap assembly also comprises the taper bottom surface that extends to chamber cap assembly peripheral part from the distributary division in gas distribution road.Size can and be adjusted substantially to cover substrate continuing surface through configuration in taper bottom surface.In other example, the first gas source can be that fluid is communicated with the first valve, and the second gas source can be that fluid is communicated with second valve, and the first conduit and the second conduit arrange independently of one another with guiding gas and distribute the conflux gas at inner face place of portion of road.The flow pattern that annular steam pattern comprises is eddy current, spiral, spiral, curling, distortion, coiling, whirlpool, their derivative pattern or their combination pattern.In other embodiments, the average surface roughness that expands passage inner face is along running through central shaft (for example, from extending into multiple the second entrances that expand passage towards the substrate support) increase that expands passage.
In another embodiment, the invention provides a kind of deposition material to the method on substrate, described method comprises substrate is positioned on the substrate support in treatment chamber, this treatment chamber comprises chamber body and chamber cap assembly, wherein chamber cap assembly comprises the gas distribution road that is positioned at chamber cap assembly middle portion, taper bottom surface, the first conduit, the second conduit, the portion of confluxing that wherein gas distributes road distributes the central shaft in the road gas that is tapered to distribute the distributary division in road to deviate from central shaft to be tapered toward gas, taper bottom surface distributes the distributary division in road to extend to chamber cap assembly peripheral part from gas, wherein taper bottom surface is big or small substantially to cover substrate through configuration and adjustment, the first conduit is coupled to the first gas inlet that gas distributes road to conflux in portion, the second conduit is coupled to the second gas inlet that gas distributes road to conflux in portion, wherein the first conduit and the second conduit setting provide annular steam pattern, make at least one carrier gas stream cross the first conduit and the second conduit and form annularly flow gas, substrate is exposed to annularly flow gas, pulse is introduced at least one precursor to annularly flow gas, and by the deposition of material that comprises at least one element that is derived from least one precursor to substrate.
In another embodiment, the invention provides a kind of chamber for the treatment of substrate, described chamber comprises a chamber cap assembly, this chamber cap assembly comprises the expansion passage that extends and be positioned at chamber cap assembly middle portion along central shaft, extend to the taper bottom surface of chamber cap assembly peripheral part from expanding passage, wherein taper bottom surface is big or small substantially to cover substrate continuing surface through configuration and adjustment.Chamber cap assembly also comprises: be coupled to the first conduit of the first gas passage, the first gas passage is around expanding passage and comprising multiple the first entrances that expand passage that extend into; And be coupled to the second conduit of the second gas passage, the second gas passage expands the second entrances of passage around expanding passage and comprising multiple extending into, and wherein multiple the first entrances and multiple the second entrance are set to provide and spread all over the annular steam pattern that expands passage.
In one example, the first gas passage can be arranged on the second gas passage directly over, and all detour and expand the top of passage in the first gas passage and the second gas passage.Multiple the first entrances and multiple the second entrance can arrange to guide the gas that expands passage inner face place independently of one another.The flow pattern that annular steam pattern comprises has eddy current, spiral, spirals, curling, distortion, coiling, whirlpool, their derivative pattern or their combination pattern.In other example, the first valve can be coupled to the first conduit and second valve can be coupled to the second conduit, and the first gas source is that fluid is communicated with the first valve, and the second gas source is that fluid is communicated with second valve.It is approximately 2 seconds or shorter that the first valve and second valve can make the burst length of atom layer deposition process, for example approximately 1 second or shorter or the scope of approximately 0.05 second to approximately 0.5 second.
In another embodiment, the invention provides a kind of chamber for the treatment of substrate, described chamber comprises a chamber cap assembly, and chamber cap assembly comprises the expansion passage that extends and be positioned at chamber cap assembly middle portion along central shaft, the first conduit, the second conduit, the first valve and second valve, the first conduit is coupled to the first gas passage, wherein the first gas passage is around expanding passage and comprising multiple the first entrances that expand passage that extend into, the second conduit is coupled to the second gas passage, wherein the second gas passage is around expanding passage and comprising multiple the second entrances that expand passage that extend into, and multiple the first entrances and multiple the second entrance are set to provide and spread all over the annular steam pattern that expands passage, and first valve be coupled to the first conduit and second valve is coupled to the second conduit, wherein can to make the burst length of atom layer deposition process be approximately 2 seconds or shorter for the first valve and second valve, for example approximately 1 second or shorter, or the scope of approximately 0.05 second to approximately 0.5 second.
In another embodiment, the invention provides a kind of deposition material to the method on substrate, described method comprises places on the substrate support of substrate in treatment chamber, and treatment chamber comprises chamber cap assembly, wherein chamber cap assembly comprises the expansion passage that extends and be positioned at chamber cap assembly middle portion along central shaft, taper bottom surface, the first conduit, the second conduit, taper bottom surface extends to chamber cap assembly peripheral part from expanding passage, wherein taper bottom surface is big or small substantially to cover substrate continuing surface through configuration and adjustment, the first conduit is coupled to the first gas passage, wherein the first gas passage is around expanding passage and comprising multiple the first entrances that expand passage that extend into, the second conduit is coupled to the second gas passage, wherein the second gas passage is around expanding passage and comprising multiple the second entrances that expand passage that extend into, and multiple the first entrances and multiple the second entrance are set to provide and spread all over the annular steam pattern that expands passage, make at least one carrier gas stream cross multiple the first entrances or multiple the second entrance and form annularly flow gas, substrate is exposed to annularly flow gas, pulse is introduced at least one precursor to annularly flow gas, and by the deposition of material that comprises at least one element that is derived from least one precursor to substrate.
In another embodiment, the invention provides a kind of chamber for the treatment of substrate, described chamber comprises a chamber cap assembly, this chamber cap assembly comprises the expansion passage that is positioned at chamber cap assembly middle portion, taper bottom surface, the first conduit, the second conduit, extend along the central shaft of substantially parallel expansion passage on the top that wherein expands passage, the expanding unit that expands passage deviates from central shaft and is tapered, the top inner face that expands passage has than the low average surface roughness of average surface roughness of the expanding unit inner face of expansion passage, taper bottom surface extends to chamber cap assembly peripheral part from the expanding unit that expands passage, wherein taper bottom surface is big or small substantially to cover substrate continuing surface through configuration and adjustment, the first conduit is coupled to the first gas inlet that expands passage top, the second conduit is coupled to the second gas inlet that expands passage top, wherein the first conduit and the second conduit are set to provide spread all over and expand passage annular steam pattern.
In other embodiments, the invention provides a kind of chamber for the treatment of substrate, described chamber comprises a chamber cap assembly, and chamber cap assembly comprises the expansion passage that is positioned at chamber cap assembly middle portion, the first conduit, the second conduit, the first valve and second valve, extend along the central shaft of substantially parallel expansion passage on the top that wherein expands passage, the expanding unit that expands passage deviates from central shaft and is tapered, the first conduit is coupled to the first gas inlet that expands passage top, the second conduit is coupled to the second gas inlet that expands passage top, wherein the first conduit and the second conduit are set to provide annular steam pattern, and first valve be coupled to the first conduit and second valve is coupled to the second conduit, wherein can to make the burst length of atom layer deposition process be approximately 2 seconds or shorter for the first valve and second valve.Chamber cap assembly also comprises the taper bottom surface that extends to chamber cap assembly peripheral part from the expanding unit of expansion passage.
In another embodiment, the invention provides a kind of deposition material to the method on substrate, described method comprises substrate is positioned on the substrate support in treatment chamber, this treatment chamber comprises chamber body and chamber cap assembly, wherein chamber cap assembly comprises the expansion passage that is positioned at chamber cap assembly middle portion, taper bottom surface, the first conduit, the second conduit, extend along the central shaft of substantially parallel expansion passage on the top that expands passage, the expanding unit that expands passage deviates from central shaft and is tapered, taper bottom surface extends to chamber cap assembly peripheral part from the expanding unit that expands passage, wherein taper bottom surface is big or small substantially to cover substrate through configuration and adjustment, the first conduit is coupled to the first gas inlet that expands passage top, the second conduit is coupled to the second gas inlet that expands passage top, wherein the first conduit and the second conduit are set to provide annular steam pattern, make at least one carrier gas stream cross first and second conduit and form annularly flow gas, substrate is exposed to annularly flow gas, pulse is introduced at least one precursor to annularly flow gas, and by the deposition of material that comprises at least one element that is derived from least one precursor to substrate.The flow pattern that annular steam pattern comprises has eddy current, spiral, spirals, curling, distortion, coiling, whirlpool, their derivative pattern or their combination pattern.
In some instances, the first conduit and the second conduit can arrange the gas that distributes the inner face place of the portion of confluxing in road with guiding gas independently of one another.For example, therefore the first conduit and the second conduit can distribute central shaft one angle (being greater than 0 degree) in road to arrange to leave gas independently of one another.Or multiple the first entrances and multiple the second entrance can independently arrange to guide the gas that expands passage inner face place separately.For example, therefore multiple the first entrances and multiple the second entrance can distribute central shaft one angle (being greater than 0 degree) in road to arrange to leave gas independently of one another.Annular steam pattern can comprise flow pattern, for example eddy current pattern, spiral pattern, the pattern that spirals, swirl patterns, distorting pattern, coiling pattern, swirl pattern or their derivative pattern.Annular steam pattern can distribute or the central shaft that expands passage is expanded at least about 1.5 circles round gas, preferably approximately 2 circles, more preferably from about 3 circles, and 4 circles more preferably from about.In other example, treatment chamber can comprise the reaction zone being positioned between taper bottom surface and substrate continuing surface.The volume of reaction zone can be about 3000cm
3or less.In one example, volume is about 1500cm
3or less.In another example, volume is about 600cm
3or less.Can place substrate support by side direction and adjust volume.
In another embodiment, the invention provides a kind of deposition material to the method on substrate, described method comprises substrate is positioned on the substrate support in treatment chamber, and this treatment chamber comprises chamber body and chamber cap assembly, and wherein chamber cap assembly comprises the gas that is positioned at chamber cap assembly middle portion and distributes road.Gas distributes road to comprise toward gas and distributes the tapered portion and deviate from the tapered distributary division of central shaft of confluxing of road central shaft.Chamber cap assembly also comprises the taper bottom surface that extends to chamber cap assembly peripheral part from the distributary division in gas distribution road.Size can and be adjusted substantially to cover substrate through configuration in taper bottom surface.In addition, chamber cap assembly also can comprise be coupled to gas distribute road conflux portion the first gas inlet the first conduit and be coupled to gas and distribute conflux second conduit of the second gas inlet of portion of road.The first conduit and the second conduit can be set to provide annular steam pattern.
Aforesaid method also comprises via first and second conduit and flows at least one carrier gas and form annularly flow gas; Substrate is exposed to annularly flow gas; Pulse is introduced at least one precursor to annularly flow gas; And by the deposition of material that comprises at least one element that is derived from least one precursor to substrate.In one example, at least two kinds of chemical precursor subsequent pulses during atom layer deposition process is introduced in annularly flow gas.In another example, at least three kinds of chemical precursor subsequent pulses during atom layer deposition process is introduced in annularly flow gas.
In another embodiment, the invention provides a kind of deposition material to the method on substrate, described method comprises substrate is positioned on the substrate support in treatment chamber, this treatment chamber comprises chamber body and chamber cap assembly, and wherein chamber cap assembly comprises the expansion passage that extends and be positioned at chamber cap assembly middle portion along central shaft.Chamber cap assembly also can comprise the taper bottom surface that extends to chamber cap assembly peripheral part from expanding passage, and wherein taper bottom surface is big or small substantially to cover substrate continuing surface through configuration and adjustment.In addition, chamber cap assembly also can comprise the first conduit that is coupled to the first gas passage, and the first gas passage is around expanding passage and containing multiple the first entrances that expand passage that extend into, and be coupled to the second conduit of the second gas passage, wherein the second gas passage expands the second entrances of passage around expanding passage and containing multiple extending into, and multiple the first entrances and multiple the second entrance are set to provide and spread all over the annular steam pattern that expands passage.
Aforesaid method also comprises makes at least one carrier gas stream cross multiple the first entrances or multiple the second entrance and form annularly flow gas; Substrate is exposed to annularly flow gas; Pulse is introduced at least one precursor to annularly flow gas; And by the deposition of material that comprises at least one element that is derived from least one precursor to substrate.In one example, at least two kinds of chemical precursor subsequent pulses during atom layer deposition process is introduced in annularly flow gas.In another example, at least three kinds of chemical precursor subsequent pulses during atom layer deposition process is introduced in annularly flow gas.
In another embodiment, the invention provides a kind of on substrat structure the method for deposited material layer, described method comprises via the first gas duct carries the first reactant gases and the first Purge gas, and wherein the first reactant gases provides with pulse, and the first Purge gas provides with Continuous Flow.The method also comprises via the second gas duct carries the second reactant gases and the second Purge gas, and wherein the second reactant gases provides with pulse, and the second Purge gas provides with Continuous Flow.
In another embodiment, the invention provides a kind of on substrat structure the method for deposited material layer, described method comprises and deliver a gas to the indoor substrate of substrate processing, this comprises that one or more gas is provided is indoor to substrate processing; See through diabatic expansion and reduce gas velocity; The middle portion of this gas to substrate is provided; And guide this gas radially to cross substrate and support peripheral part of substrate from the middle portion of substrate.
Brief Description Of Drawings
By reference to the embodiments of the present invention of the appended accompanying drawing of explanation, the present invention who sketches is above described in detail, thereby can obtains and can understand in detail the mode of above-cited feature of the present invention.
It is noted that, although accompanying drawing discloses the typical embodiment of the present invention, described embodiment, not in order to limit scope of the present invention, can be made other equivalent embodiments to the present invention.
Fig. 1 illustrates according to the cross sectional view of the treatment chamber of an embodiment, and described treatment chamber comprises the gas transportation facilities for ald;
Fig. 2 illustrates the upper cross section view of the expansion passage of the chamber cap of Fig. 1;
Fig. 3 illustrates the cross sectional view of the expansion passage of the chamber cap of Fig. 1;
Fig. 4 illustrates the mobile cross sectional representation of two different positionss of gas between the chamber cap bottom surface of substrate surface and Fig. 1;
Fig. 5 illustrates according to the upper cross section view of the expansion passage that is used for receiving single air-flow of an embodiment;
Fig. 6 illustrates according to the upper cross section view of the expansion passage that is used for receiving three kinds of air-flows of an embodiment;
Fig. 7 illustrates according to the cross sectional view of the treatment chamber of another embodiment, and described treatment chamber comprises the gas transportation facilities for ald;
Fig. 8 illustrates according to the cross sectional view of the treatment chamber of another embodiment, and described treatment chamber comprises the gas transportation facilities for ald;
Fig. 9 A-9B illustrates according to the cross sectional view of the chamber cap choker of other embodiment;
Figure 10 A-10F illustrates according to the cross sectional view of the treatment chamber chamber cap assembly for ald of another embodiment;
Figure 11 A-11C illustrates according to the cross sectional view of the treatment chamber of another embodiment, and described treatment chamber comprises cap assemblies and the gas transportation facilities for ald;
Figure 12 A-12E illustrates according to the schematic diagram of the treatment chamber chamber cap assembly for ald of another embodiment;
Figure 13 A-13C illustrates according to other schematic diagram of the treatment chamber chamber cap assembly of Figure 12 A-12E of described embodiment;
Figure 14 A-14C illustrates according to the schematic diagram of the air-flow pattern in the gas inject assembly of an embodiment and Figure 12 A-13C treatment chamber chamber cap assembly;
Figure 15 A-15C illustrates according to the schematic cross-section of the treatment chamber of another embodiment, and described treatment chamber comprises cap assemblies and the gas transportation facilities for ald;
Figure 16 A-16E illustrates according to the schematic diagram of the treatment chamber chamber cap assembly for ald of another embodiment;
Figure 17 A-17D illustrates according to the schematic cross-section of the treatment chamber of another embodiment, and described treatment chamber comprises cap assemblies and the gas transportation facilities for ald; And
Figure 18 A-18H illustrates according to the schematic diagram of the chamber cap cover cap for ald of alternative embodiment.
Embodiment
Embodiments of the present invention propose can be during ald (ALD) technique equipment and the method for deposition material.Embodiment comprises ALD chamber and gas delivery system, and described gas delivery system comprises expansion channel-style upper cover assembly, conflux/bypass type upper cover assembly, multichannel injection type upper cover assembly or expands cap style upper cover assembly.Other embodiment provides and during ALD technique, uses the method for these gas delivery systems with deposition material.
Expand channel-style upper cover assembly
Fig. 1 illustrates the cross section of an embodiment for the treatment of chamber 200, and described treatment chamber 200 comprises the gas delivery system 230 for ALD or successive layers deposition.The chamber body 202 that treatment chamber 200 comprises tool sidewall 204 and bottom 206.The slit valve 208 for the treatment of chamber 200 provides mechanism (not shown) turnover treatment chamber 200 for example, to transmit and to fetch substrate 210, the semiconductor wafer of 200mm or 300mm or glass substrate.
Substrate support 212 is supported in substrate 210 in treatment chamber 200 on substrate continuing surface 211.Substrate support 212 is mounted to a up and-down motor 214, in order to improve and to reduce substrate support 212 and to be placed on the substrate 210 on substrate support 212.The lifter plate 216 that is connected to up and-down motor 218 is located in treatment chamber 200, in order to improve and to reduce the removable lifter pin 220 through substrate support 212.Lifter pin 220 improves and reduces the lip-deep substrate 210 of substrate support 212.Substrate support 212 can comprise vacuum suction seat (not shown), electrostatic chuck (not shown) or pincers ring (not shown), substrate 210 is fixed on substrate support 212 during processing.
Can heat the substrate 210 being placed on it by heated substrate strut member 212.For example, can carry out heated substrate strut member 212 with the type that the is embedded heating unit (not shown) of such as resistance heater etc., or can use such as the radiant heat (not shown) of the heating lamp of being located at substrate support 212 tops and heat.Purify ring 222 and can be placed on substrate support 212, provide Purge gas to substrate 210 peripheral part to define purification channel 224, in order to avoid settling is deposited on substrate 210.
Gas delivery system 230 is located at the top of chamber body 202, for example, in order to supply with treatment chamber 200 gases, process gas and/or Purge gas.Vacuum system 278 connects suction road 279, so that arbitrary predetermined gas is discharged outside treatment chamber 200, and assists maintain the pressure of wanting in the suction district 266 for the treatment of chamber 200 or maintain the pressure range of wanting.
In one embodiment, gas delivery system 230 comprises chamber cap assembly 232.Chamber cap assembly 232 comprises the expansion passage 234 extending from chamber cap assembly 232 middle portions and certainly expands passage 234 lower surface 260 that extends to chamber cap assembly 232 peripheral part.Lower surface 260 is through configuration and adjust size substantially to cover the substrate 210 on substrate support 212.Expand passage 234 and have gas inlet 236a, 236b, in order to the air-flow from two groups of similar valve 242a/252a, 242b/252b to be provided, described gas inlet 236a, 236b can provide together and/or separately.
In a structure, valve 242a and valve 242b are coupled to different reacting gas sources, but are preferably coupled to same purge gas source.For example, valve 242a is coupled to reacting gas source 238 and valve 242b couples reacting gas source 239, and two valve 242a, 242b are all coupled to purge gas source 240.Valve 242a, 242b comprise line of pipes 243a, the 243b with valve component 244a, 244b separately, and valve 252a, 252b comprise purge lines 245a, the 245b with valve component 246a, 246b separately.Line of pipes 243a, 243b are communicated with reacting gas source 238,239 fluids, and are communicated with the gas inlet 236a, the 236b fluid that expand passage 234.Valve component 244a, the 244b of line of pipes 243a, 243b controls reactant gases and flows to and expand passage 234 from reacting gas source 238,239.Purge lines 245a, 245b are communicated with purge gas source 240 fluids, and crossing with line of pipes 243a, the 243b of the valve component 244a of line of pipes 243a, 243b, 244b downstream part.Valve component 246a, the 246b of purge lines 245a, 245b controls Purge gas and flows to and expand passage 234 from purge gas source 240.If carrier gas is used for transporting the reactant gases of autoreaction gas source 238,239, carrier gas and preferably identical (for example, using argon gas as carrier gas and Purge gas) of Purge gas.
Valve component 244a, 244b, 246a, 246b respectively can comprise dividing plate (not shown) and valve seat (not shown).Apply bias voltage or driven and can open or close dividing plate.Dividing plate can be pneumatic type or electrodynamictype.Pneumavalve comprises can be purchased from the pneumavalve of the Veriflo branch of Fujikin company and Parker Han Ni Fen company (Park Hannifin Corp.).Motorized valve comprises can be purchased from the motorized valve of Fujikin company.For example, ALD valve can adopt Fujikin model FPR-UDDFAT-21-6.35-PI-ASN or Fujikin model FPR-NHDT-21-6.35-PA-AYT.Logic controller 248a, the 248b of programmable are coupled to valve 242a, 242b, in order to the startup of the dividing plate of valve component 244a, the 244b of control valve 242a, 242b, 246a, 246b.The gas pulses cycle that pneumavalve produces can be low to moderate approximately 0.020 second.The gas pulses cycle that motorized valve produces can be low to moderate approximately 0.005 second.Motorized valve generally need use the driving mechanism being in relation between valve and the logic controller of programmable.
Valve 242a, 242b can be respectively zero dead volume (zero dead volume) valve, and described valve can, in the time that valve component 244a, 244b close, rinse the reactant gases of line of pipes 243a, 243b.For example, purge lines 245a, 245b can arrange valve component 244a, the 244b in abutting connection with line of pipes 243a, 243b.In the time that valve component 244a, 244b close, purge lines 245a, 245b can supply Purge gas and rinse line of pipes 243a, 243b.In illustrated embodiment, purge lines 245a, 245b are slightly separated by with valve component 244a, the 244b of line of pipes 243a, 243b, so open Shi Buhui at valve component 244a, 244b Purge gas is directly sent into valve component 244a, 244b.Zero dead volume valve refers to that valve has insignificant dead volume (be dead volume differ be decided to be zero) as used herein.
Each group valve 242a/252a, 242b/252b can be used to provide combination air-flow and/or the independent air-flow of reactant gases and Purge gas.With reference to valve 242a/252a, an example of the combination air-flow of reactant gases and Purge gas comprises the continuous purification gas from purge gas source 240 and the purge lines 245a that flows through, and from the pulsed reaction gas of reacting gas source 238 and the line of pipes 243a that flows through.By opening the dividing plate of valve component 246a of purge lines 245a, can Purge gas without interruption.By opening and close the dividing plate of valve component 244a of line of pipes 243a, reactant gases that can pulse supply reacting gas source 238.With reference to valve 242a/252a, the independent air-flow example of reactant gases and Purge gas comprises from the Purge gas pulse of purge gas source 240 and the purge lines 245a that flows through with from the reactant gases pulse of reacting gas source 238 and the line of pipes 243a that flows through.By opening and close the dividing plate of valve component 246a of purge lines 245a, can pulse supply Purge gas.By opening and close the dividing plate of valve component 244a of line of pipes 243a, reactant gases that can pulse supply reacting gas source 238.
Line of pipes 243a, the 243b of valve 242a, 242b can be connected to gas inlet 236a, 236b via gas duct 250a, 250b.Gas duct 250a, 250b can be integral component or the separation assembly of valve 242a, 242b.In one aspect, valve 242a, 242b next-door neighbour expands passage 234, so can reduce line of pipes 243a, 243b and gas duct 250a, 250b unnecessary volume between valve 242a, 242b and gas inlet 236a, 236b.
With reference to Fig. 3, the longitudinal axis 290 of gas duct 250a or 250b and gas inlet 236a or 236b and expansion passage 234 can be arranged to unspecified angle relation.Gas duct 250a or 250b and gas inlet 236a, 236b be preferably perpendicular to the longitudinal axis 290 (wherein+β ,-β=90 °) or make medullary ray 302a, the 302b of gas duct 250a, 250b and the longitudinal axis 290 be one angle+β or-β (wherein 90 ° of 90 ° or 0 ° <-β < of 0 ° of <+β <).As shown in Figure 3, gas duct 250a and 250b can vertical axes 290 be horizontally disposed with or can downward-sloping+maybe can be inclined upwardly-β of β angle angle, make gas flow expand passage 234 walls, but not directly down flowing to substrate 210, this contributes to reduce the possibility of the reactant adsorbing on substrate 210 surfaces of blowing off.In addition, gas duct 250a, 250b can increase toward the diameter of gas inlet 236a, 236b gradually from line of pipes 243a, the 243b of valve 242a, 242b, expand the front gas velocity that first slows down of passage 234 to help entering at gas.For example, the internal diameter of gas duct 250a, 250b can increase gradually, or gas duct 250a, 250b can comprise the cumulative connected conduit of multiple internal diameters.
With reference to Fig. 1, expand passage 234 and comprise a passage, the bottom 235 of the lower surface 260 of the top 237 that expands without leave passage 234 in this passage toward this expansion passage 234 in abutting connection with chamber cap assembly 232 increases.In a specific implementations, the expansion passage 234 of the chamber of the substrate that is used for processing diameter 200mm is approximately 0.2 inch to approximately 1.0 inches at the internal diameter on the top 237 that expands passage 234, preferably approximately 0.3 inch to approximately 0.9 inch, more preferably from about 0.3 inch to approximately 0.5 inch, this chamber is approximately 0.5 inch to approximately 3.0 inches at the internal diameter of the bottom 235 that expands passage 234, preferably approximately 0.75 inch to approximately 2.5 inches, more preferably from about 1.1 inches to approximately 2.0 inches.In another specific implementations, the expansion passage 234 of the chamber of the substrate that is used for processing diameter 300mm is approximately 0.2 inch to approximately 1.0 inches at the internal diameter that expands passage 234 tops 237, preferably approximately 0.3 inch to approximately 0.9 inch, more preferably from about 0.3 inch to approximately 0.5 inch, this chamber is approximately 0.5 inch to approximately 3.0 inches at the internal diameter that expands passage 234 bottoms 235, preferably approximately 0.75 inch to approximately 2.5 inches, more preferably from about 1.2 inches to approximately 2.2 inches.Above-mentioned size is applicable to supply the expansion passage of about 500sccm to the total gas couette of about 3000sccm conventionally.In other specific implementations, variable-size is for specific gas traffic flow mistake.Generally speaking, gas flow is larger, expands the required diameter dimension of passage larger.In one embodiment, expansion passage 234 can be formed from the circular cone (comprising the shape of similar brachymemma circular cone) of brachymemma.No matter gas is to flow to expand passage 234 walls or directly flow to substrate 210 downwards, and when gas stream is in the time expanding passage 234, gas expansion will cause gas velocity to reduce.Air flow slows contributes to reduce the possibility of the reactant adsorbing on substrate 210 surfaces of blowing off.
The phase is not limited to theory, believes that the diameter that expands passage 234 increases and can allow by expanding the less adiabatic expansion of γ-ray emission of passage 234 from the 237Wang bottom, top 235 that expands passage 234, and this contributes to control gas temperature.For example, enter and expand the gas of passage 234 and produce suddenly adiabatic expansion and will cause gas temperature to decline via gas inlet 236a, 236b, cause gas to condense and form drop.On the other hand, the cumulative expansion passage 234 of believing embodiment of the present invention can make the less adiabatic expansion of γ-ray emission.Therefore there are more heat and gaseous interchange, therefore by controlling peripheral part temperature (being the temperature of watch-keeping cubicle cap assemblies 232) of gas, gas temperature more easy to control.Cumulative expansion passage 234 can comprise one or more taper inner face, for example tapered plane, concave surface, convex surface or their combination, or can comprise the fragment (i.e. a part be not taper for taper, a part) of one or more taper inner face.
In one embodiment, the contiguous top 237 that expands passage 234 of gas inlet 236a, 236b.In other embodiments, one or more gas inlet 236a, 236b can be located between top 237 and bottom 235 along the total length that expands passage 234.
Fig. 2 illustrates the upper section of an embodiment of the expansion passage 234 of Fig. 1 chamber cap assembly 232.Medullary ray 302a, the 302b of gas duct 250a or 250b presss from both sides an angle [alpha] respectively with by the spoke radial line 304 that expands passage 234 centers.The entrance that gas enters gas duct 250a, 250b preferably arranges with inclination alpha (, as 0 ° of α >), and gas is flowed according to the circumferential direction of arrow 310a and 310b indication.With inclination alpha supply gas, directly flow direction expansion channel wall (, α=0 °) contributes to form laminar flow but not is turbulent by expanding passage 234.Believe that laminar flow is conducive to remove the expansion inner face of passage 234 and other surface of chamber cap assembly 232 by expanding passage 234.In comparison, turbulent flow can not flow through inner face and other surface of expanding passage 234 equably, and may contain the dead angle that air-flow cannot arrive at.In one aspect, gas duct 250a, 250b and corresponding gas inlet 236a, 236b each interval separate, and with same circumferential direction (being clockwise or inverse clock) guiding air-flow.
The phase is not limited to theory, and Fig. 3 is the sectional view of the expansion passage 234 of chamber cap assembly 232, and this sectional view shows two kinds of gas streams in described expansion passage 234.Although can not know for sure by expanding the flow pattern of passage 234, believe annularly flow 310 (arrow 310a and the 310b of Fig. 2) can adopt annularly flow pattern and as arrow 402a, 402b (hereinafter referred to as " eddy current " flow 402) as shown in flow through expand passage 234, described annularly flow pattern for example for eddying flow, helicoidal flow, spiral that mobile, mobile, the fast eddy flow that turns round and round is moving, distortion is flowed, reel flow, tortuously flow, curlingly flow, swirl flow, they derivative flowed or their combination is flowed.
As shown in Figure 3, annularly flow is formed at " treatment zone " but not separate the space of substrate 210.In one aspect, because eddying flow pattern scans the whole inner face that expands passage 234, therefore eddying flow contributes to more effectively emptying expansion passage 234.
In one embodiment, flow while crossing substrate 210 surface when not expecting to spiral, the distance 410 between gas inlet 236a, 236b and substrate 210 is enough to allow eddying flow 402 dissipate and flow downwards, as shown in arrow 404.Believing eddying flow 402 and flowing downward 404 is to advance with layer flow mode, so can effectively remove the surface of chamber cap assembly 232 and substrate 210.In a specific implementations, the distance 410 expanding between passage 234 tops 237 and substrate 210 is approximately 3 inches to approximately 8 inches, preferably approximately 3.5 inches to approximately 7 inches, and more preferably from about 4 inches to approximately 6 inches, for example approximately 5 inches.
With reference to Fig. 1, chamber cap assembly 232 lower surfaces 260 of at least a portion are tapered toward chamber cap assembly 232 peripheral part from expanding passage 234, to help to provide the velocity wave form of gas from the improvement on expansion passage 234 flowing through substrate 210 surfaces (, from substrate center to substrate perimeter).Lower surface 260 can comprise one or more conical surface, for example plane, concave surface, convex surface or their combination.In one embodiment, lower surface 260 is tapered funnel-form.
The phase is not limited to theory, and Fig. 4 has illustrated flowing of two different positionss 502,504 of gas between chamber cap assembly 232 lower surfaces 260 and substrate 210 surfaces.The gas velocity of a certain position represents with following formula in theory:
(1)Q/A＝V
Wherein, " Q " represent gas flow, " A " be cross-sectional flow area, " V " represent gas velocity.Gas velocity is inversely proportional to the area of flow section " A " (H × 2 π R), wherein " H " represent that radius is for the height 2 π R of flow section " R " and the girth of flow section.In other words, gas velocity is inversely proportional to the height of flow section " H " and the radius of flow section " R ".
The speed of the flow section of comparison position 502 and position 504, suppose gas flow " Q " all equate with all positions between substrate 210 surfaces at chamber cap assembly 232 lower surfaces 260, if the area of flow section " A " equally large, gas velocity is also identical in theory.If the area of position 502 and the flow section of position 504 is the same large, the height H of position 502
1should be greater than the height H of position 504
2.
In one aspect, lower surface 260 is downward-sloping to help the reducing speed difference that air-flow is passed through between chamber cap assembly 232 lower surfaces 260 and substrate 210, and then makes substrate 210 surface uniform contact reacts gases.In one embodiment, the flow section between the lower surface 260 that chamber cap assembly 232 is downward-sloping and substrate 210 surfaces, the maximum area in described cross section and the ratio of minimum area are less than approximately 2, are preferably less than approximately 1.5, are more preferably less than approximately 1.3, and most preferably from about 1.
The phase is not limited to theory, believes that air-flow crosses substrate 210 surfaces with the speed of homogeneous more and can make gas be deposited on more equably on substrate 210.Believe that gas velocity is proportional to gas concentration, be therefore proportional to gas aggradation in the speed on substrate 210 surfaces.Therefore substrate 210 first surface regions are with respect to substrate 210 second surface regions faster for gas velocity, there is gas aggradation speed faster first area.The chamber cap assembly 232 of believing the downward-sloping lower surface 260 of tool can supplied gas be deposited on whole substrate 210 surfaces more equably, and this is because downward-sloping lower surface 260 has produced the more speed of homogeneous, therefore that gas spreads all over the concentration on substrate 210 surfaces is more even.
Fig. 1 illustrates the choker (choke) 262 of chamber cap assembly 232 peripheral part that are positioned at adjacent substrate 210 peripheries.When chamber cap assembly 232 is assembled in the time that substrate 210 surroundings form treatment zone, the element that choker 262 comprises arbitrary restriction gas flowing through substrate 210 periphery near zones.Fig. 9 A illustrates the cross section of an embodiment of choker 262.In this embodiment, choker 262 comprises horizontal sidepiece 267 around.In one aspect, purifying ring 222 is used for guiding Purge gas to flow to the horizontal sidepiece 267 of choker 262.Fig. 9 B illustrates the cross section of another embodiment of choker 262.In this embodiment, choker 262 comprises the protuberance 268 to downward-extension around.In one aspect, purify ring 222 can be used to guide purge gas flow towards periphery part to the protuberance 268 of downward-extension.In a specific implementations, be approximately 0.01 inch to approximately 1.0 inches to the thickness of the protuberance 268 of downward-extension, preferably approximately 0.01 inch to approximately 0.5 inch.
In a specific implementations, choker 262 is approximately 0.04 inch to approximately 2.0 inches with the spacing of substrate support 212, preferably approximately 0.04 inch to approximately 0.2 inch.Spacing can change according to delivering gas and deposition process conditions.Utilize choker 262 to separate the pressure uneven distribution district of reaction zone 264 and suction district 266 (Fig. 1), the pressure distribution in volume or the reaction zone 264 that can make to define between chamber cap assembly 232 and substrate 210 is more even.
With reference to Fig. 1, in one aspect, because reaction zone 264 and suction district 266 have separated, therefore reactant gases or Purge gas only need appropriateness to fill reaction zone 264, allow the abundant contact reacts gas of substrate 210 or Purge gas.In traditional chemical vapour deposition, prior art chamber needs simultaneously and evenly supplies the extremely whole substrate surface of combination air-flow of reactant gases, to guarantee that reactant gases is equably in whole substrate surface interreaction.In ald, treatment chamber 200 is introduced reactant gases in succession to substrate 210 surfaces, makes reactant interlaminate be adsorbed in substrate 210 surfaces.Therefore ald does not need reactant gases to arrive at substrate 210 surfaces simultaneously, need on the contrary to supply enough reactant gasess and make reactant thin layer be adsorbed in substrate 210 surfaces.
Because the internal volume of the volume ratio traditional C VD chamber of reaction zone 264 is little, therefore need less gas volume to fill the reaction zone 264 of the special process that carries out ald program.For example, taking the chamber embodiment of substrate of processing diameter 200mm as example, the volume of reaction zone 264 is about 1000cm
3or less, preferred about 500cm
3or less, more preferably from about 200cm
3or less.Taking the chamber embodiment of substrate of processing diameter 300mm as example, the volume of reaction zone 264 is about 3000cm
3or less, preferred about 1500cm
3or less, more preferably from about 600cm
3or less.In one embodiment, can raise or reduce substrate support 212 to adjust reaction zone 264 volumes for depositing.The volume of reaction zone 264 is less, needs the deposition gas scale of construction or the purified gas scale of construction of inflow treatment chamber 200 fewer.Because gas usage reduces, thus can improve treatment chamber 200 production capacities and reduce waste, and then cut operating costs.
The chamber cap assembly 232 of Fig. 1-4 comprises cover cap 272 and cover plate 270, and wherein cover cap 272 and cover plate 270 form expansion passage 234.The optional land used of add-in card (not shown) can be placed between cover cap 272 and cover plate 270.Add-in card is used for adjusting the spacing of (for example strengthening) cover cap 272 and cover plate 270, can change thus expansion passage 234 length that are arranged in described cover cap 272 and cover plate 270.In other embodiments, expanding passage 234 can be made up of single-material.
Depending on gas to be conveyed, chamber cap assembly 232 can comprise cooling module and/or heating unit.The temperature of watch-keeping cubicle cap assemblies 232 can avoid gas on chamber cap assembly 232, to decompose, deposit or condensation.For example, water channel (not shown) can be located in chamber cap assembly 232, in order to cooling room cap assemblies 232.In another embodiment, heating unit (not shown) can be embedded or around the part of chamber cap assembly 232, in order to heating chamber cap assemblies 232.In one embodiment, can heat independently or the part of cooling room cap assemblies 232.For example, with reference to Fig. 1, chamber cap assembly 232 comprises cover plate 270 and cover cap 272, and its cover plate 270 and cover cap 272 form expansion passage 234.Cover cap 272 can remain in a temperature range, and 270 of cover plates can remain in another temperature range.For example, be wound around or use other heating unit heating cover cap 272 can prevent reactant gases condensation with heating zone, and cover plate 270 maintains and is peripheral part temperature.In another embodiment, can heat cover cap 272 and utilize the water channel that wears it to carry out cooling cover plate 270, in order to avoid reactant gases carries out thermolysis on cover plate 270.
The part that chamber cap assembly 232 comprises can be made up of the applicable material of the aluminium of stainless steel, aluminium, nickel plating, nickel or other and pending processing compatibility.In one embodiment, cover cap 272 contains aluminium or stainless steel, and cover plate 270 contains aluminium.In another embodiment, the add-in card being selectively placed between cover plate 270 and cover cap 272 contains stainless steel.
In one embodiment, the inner face 261 (comprising the inner face of cover plate 270 and cover cap 272) and the lower surface 260 of chamber cap assembly 232 that expand passage 234 comprise polishing minute surface, form laminar flow with assist gas along the lower surface 260 that expands passage 234 and chamber cap assembly 232.In another embodiment, the inner face of gas duct 250a, 250b can be through electropolishing, to help the gas that forms Laminar Flow.
In alternative embodiment, expand the inner face 261 (comprising the inner face of cover plate 270 and cover cap 272) of passage 234 and the lower surface 260 of chamber cap assembly 232 and comprise the surface that uneven surface or mechanical treatment are crossed, to increase the surface-area on whole surface.Uneven surface more easily sticks together at inner face 261 and lower surface 260 material that gathers of not wishing to get.The rete that the normal generation of gas-phase deposition is not wished to get, and may peel off and pollute substrate 210 from inner face 261 and lower surface 260.In one embodiment, the mean roughness (R of lower surface 260 and/or inner face 261
a) be at least approximately 10 μ in, be for example that (m) to approximately 200 μ in, (approximately 5.08 μ m) for approximately 0.254 μ for approximately 10 μ in, preferably (m) to approximately 100 μ in, (m), more preferably from about (m) to approximately 80 μ in, (approximately 2.032 μ m) for approximately 0.762 μ for 30 μ in for approximately 2.54 μ for approximately 0.508 μ for approximately 20 μ in.In another example, the mean roughness of lower surface 260 and/or inner face 261 be at least about 100 μ in (approximately 2.54 μ m), preferably between approximately 200 μ in (approximately 5.08 μ m)～approximately 500 μ in (approximately 12.7 μ m).
With reference to Fig. 1, can couple treatment chamber 200 control units 280 such as programmable Personal Computer, workstation computer, in order to control processing condition.For example, in the different steps of substrate processing program, control unit 280 can be used to control and flows through valve 242a, 242b from process gas and the Purge gas of each gas source 238,239 and 240.For instance, control unit 280 comprises central processing unit (CPU) 282, supports circuit 284 and have the internal memory 286 of relevant control software 283.
Control unit 280 can be the general-purpose computer processor of arbitrary type, and described control unit can be used for industry setting and controls various chambers and sub-processor.CPU 282 can use arbitrary applicable internal memory 286, for example random access memory, read-only storage, floppy disk, hard disk or other near-end or long-range digital storage.Various support circuit can connect CPU 282, in order to support treatment chamber 200.Control unit 280 can be connected to the controller of another contiguous independent chamber part, programmable logic controller 248a, the 248b of for example valve 242a, 242b.Seeing through many signal wires (be referred to as below signal bus 288, part be plotted in Fig. 1) can operation control unit 280 and the two-way communication of other assembly for the treatment of chamber 200.Except controlling the process gas of gas source 238,239,240 and programmable logic controller 248a, the 248b of Purge gas and valve 242a, 242b, control unit 280 is also responsible for automatically controlling the action of other processing wafer, for example transmit wafer, control temperature, emptying chamber etc., these control sections will be illustrated in elsewhere herein.
With reference to Fig. 1-4, when running, mechanism (not shown) is sent to treatment chamber 200 via slit valve 208 by substrate 210.Lifter pin 220 pulls together substrate 210 to be put on substrate support 212 with mechanism.Substrate support 212 lifts substrate 210 and makes the lower surface 260 of substrate 210 near chamber cap assembly 232.Utilize together or individually valve 242a can inject (being pulse supply) first air-flow to the expansion passage 234 for the treatment of chamber 200 and utilize valve 242b to inject the second air-flow to treatment chamber 200.The first air-flow can comprise the reactant gases of supplying from the Purge gas without interruption of purge gas source 240 with from the pulse of reacting gas source 238, maybe can comprise the reactant gases of supplying from the pulse of reacting gas source 238 and the Purge gas of supplying from the pulse of purge gas source 240.The second air-flow can comprise the reactant gases of supplying from the Purge gas without interruption of purge gas source 240 with from the pulse of reacting gas source 239, maybe can comprise the reactant gases of supplying from the pulse of reacting gas source 239 and the Purge gas of supplying from the pulse of purge gas source 240.Air-flow is passed through and is expanded passage 234 with eddying flow 402 patterns, uses and scans the whole inner face that expands passage 234.Eddying flow 402 patterns dissipate and flow 404 downwards towards substrate 210 surfaces.When gas stream is in the time expanding passage 234, gas velocity can slow down.Air-flow is followed the surface of flowing through substrate 210 and the lower surface 260 of chamber cap assembly 232.The downward-sloping lower surface 260 of chamber cap assembly 232 contributes to reduce air-flow and crosses the speed difference on substrate 210 surfaces.Air-flow then flows through choker 262 and enters the suction district 266 for the treatment of chamber 200.Excess air, by product etc. will flow into suction road 279, then be discharged outside treatment chamber 200 by vacuum system 278.In one aspect, air-flow is passed through and is expanded between passage 234 and substrate 210 surfaces and chamber cap assembly 232 lower surfaces 260 with layer flow mode, so can make the surperficial of reactant gases uniform contact substrate 210 and effectively remove the inner face of chamber cap assembly 232.
The treatment chamber 200 of Fig. 1-4 has multinomial feature.In one aspect, the 264 volume ratio traditional C VD chambers, reaction zone that treatment chamber 200 provides are little.200 for the treatment of chambers need the reactant gases of small amount or Purge gas to fill the reaction zone 264 of carrying out special process.In another aspect, treatment chamber 200 provides to be had downward-sloping or is the chamber cap assembly 232 of funnel-form lower surface 260, so can reduce the air-flow speed difference of chamber cap assembly 232 bottom surfaces to substrate 210 of passing through.In aspect another, treatment chamber 200 provides and expands the speed that passage 234 passes through with the air flow stream that slows down.More on the one hand in, the gas duct that treatment chamber 200 provides with expand passage 234 center and press from both sides an angle [alpha].Treatment chamber 200 provides the further feature described in this paper elsewhere.Other chamber embodiment for ald comprises one or more above-mentioned feature.
For example, Fig. 7 illustrates another embodiment for the treatment of chamber 800, comprises the gas transportation facilities 830 that contains chamber cap assembly 832, and chamber cap assembly 832 provides the reaction zone 864 of small volume and expands passage 834.The part assembly for the treatment of chamber 800 is identical or similar with the assembly of above-mentioned Fig. 1 treatment chamber 200.Therefore, represent with same element numbers.Chamber cap assembly 832 comprises substantially smooth lower surface 860.In one embodiment, choker 262 is approximately 0.04 inch to approximately 2.0 inches with the spacing of substrate support 212, more preferably from about 0.04 inch to approximately 0.2 inch.
In another example, Fig. 8 illustrates another embodiment for the treatment of chamber 900, comprises the gas transportation facilities 930 that contains chamber cap assembly 932, and chamber cap assembly 932 provides the reaction zone 964 of small volume and downward-sloping or be funnelform lower surface 960.The part assembly for the treatment of chamber 900 is identical or similar with the assembly of above-mentioned Fig. 1 treatment chamber 200, represents with same element numbers.Gas source 937 is connected to passage 933 via one or more valve 941.In one aspect, passage 933 is very long, the possibility of blowing off the reactant that substrate 210 surfaces are adsorbed to reduce the gas of introducing via valve 941.
The gas transportation facilities 230,830,930 of above-mentioned Fig. 1-8 comprises chamber cap assembly 232,832,932, and described chamber cap assembly is used as the upper cover of chamber body 202.In another embodiment, chamber cap assembly 232,832,932 comprises arbitrary covering member that is placed in substrate support 212 tops, to make reaction zone 264,864,964, and reduces the gas volume that must flow into during substrate processing.In other embodiments, chamber cap assembly 232,832,932 can replace or bonded substrate strut member 212 move up and down to adjust the volume of reaction zone 264,864,964.
The gas delivery system 230 of Fig. 1 comprises two groups of valve 242a/252a, 242b/252b of coupling reacting gas source 238,239 and purge gas source 240.In other embodiments, gas delivery system 230 comprises one or more and couples with not isostructure the valve of single or multiple gas source.The treatment chamber 200 of Fig. 1-3 utilizes two groups of valve 242a/252a, 242b/252b to supply together or individually the air-flow of two gas inlet 236a, 236b.Fig. 5 is the upper section of another expansion passage 634 embodiments of chamber cap assembly 232, and this expansion passage 634 is used for receiving the single air-flow of the gas duct 650 gas coming through entrances 636 from coupling single or multiple valve.The medullary ray 602 of gas duct 650 with press from both sides an angle [alpha] by the spoke radial line 604 that expands passage 634 centers.The gas duct 650 arranging with inclination alpha (wherein 0 ° of α >) can make gas flow according to the circumferential direction of arrow 610 indications.Fig. 6 is the upper section of another expansion passage 734 embodiments of chamber cap assembly 232, this expansion passage 734 is used for receiving three kinds of air-flows, and air-flow together, part (two kinds in three kinds together) or individually from three gas duct 750a, 750b, 750c flow through three gas inlet 736A, 736B, 736C, conduit couples respectively single or multiple valve together.The medullary ray 702 of gas duct 750a, 750b, 750c with press from both sides an angle [alpha] by the spoke radial line 704 that expands passage 734 centers.Gas duct 750a, 750b, the 750c arranging with inclination alpha (wherein 0 ° of α >) can make gas flow according to the circumferential direction of arrow 710 indications.
Can use valuably tool gas transportation facilities 230 described in Fig. 1-8, 830, 930 treatment chamber 200, 800, 900 embodiment, chamber cap assembly 1032 described in Figure 10 A-17D, 1232, 1632 with treatment chamber 1100, 1500, 1700 embodiment, with gas conveying assembly 1800a described in Figure 18 A-18H, 1800c, 1800e, the embodiment of 1800g is implemented ald and is included but not limited to tantalum, titanium, tungsten, ruthenium, hafnium, element with copper, or be used for implementing ald compound or alloy/composite membrane, wrap but be not limited to draw together tantalum nitride, tantalum silicon nitride, titanium nitride, titanium silicon nitride, tungsten nitride, tungsten silicon nitride, and aluminum bronze.Described in Fig. 1-8, the embodiment of the treatment chamber 200,800,900 of tool gas transportation facilities 230,830,930 also can be conducive to for chemical vapour deposition differing materials.
For clearly demonstrating, the treatment chamber taking Fig. 1-4 200 is carried out to ald tantalum nitride layer as example detailed description atom layer deposition process.In one aspect, ald tantalum nitride layer comprises that subsequent pulses supply tantalum precursor and nitrogen precursor are to treatment chamber 200, wherein each pulse is separated and is removed arbitrary excess reactant by purge gas flow and/or emptying chamber, in order to avoid tantalum precursor and nitrogen precursor produce gas-phase reaction and remove arbitrary byproduct of reaction.In each working cycle, in succession supply tantalum precursor and nitrogen precursor and can adsorb in turn tantalum precursor individual layer and nitrogen precursor individual layer, and then form tantalum nitride individual layer on substrat structure.Refer to substrate and be formed at the other materials layer on substrate, for example dielectric layer at this " substrat structure ".
The absorbing process of believing the reactant individual layer of absorption such as tantalum precursor and nitrogen precursor belongs to from limit absorption, during a certain pulses, because substrat structure surface is used for absorption reaction thing according to the site (site) that has limited quantity, therefore an individual layer may be only adsorbed on substrat structure surface.Once take this and have the site of limited quantity such as the reactant of tantalum precursor or nitrogen precursor, further absorption reaction thing.Can repeatedly carry out working cycle until tantalum nitride layer reaches pre-determined thickness.
Gas source 238 can for example, via valve 242a pulse supply tantalum precursor, five (dimethylformamide base) tantalum (PDMAT; Ta (NMe
2)
5).Tantalum precursor can be followed supply carrier gas, comprises helium (He), argon gas (Ar), nitrogen (N
2), hydrogen (H
2) and their composition gas, but not as limit.Gas source 239 can for example, via valve 242a pulse supply nitrogen precursor, ammonia.Carrier gas also can be assisted delivery of nitrogen precursor.Gas source 240 can be introduced Purge gas, for example argon gas via valve 242a and/or via valve 242b.In one aspect, gas source 240 can be via valve 242a, 242b Purge gas without interruption, the carrier gas during described Purge gas is used as the Purge gas between pulse supply tantalum precursor and nitrogen precursor and is used as pulse supply tantalum precursor and nitrogen precursor.In one aspect, see through two gas duct 250a, 250b delivery of purge gas compared to only seeing through gas duct 250a or more fully cleaning reaction district 264 of 250b delivery of purge gas.In one aspect, the process that is adsorbed in substrat structure surface due to reactant belongs to from limit absorbing process, so that the flow uniformity such as the reactant gases of tantalum precursor or nitrogen precursor is important unlike the flow uniformity of Purge gas, therefore can be via gas duct 250a or 250b transport of reactant gases body.In other embodiments, can pulse supply Purge gas.In other embodiments, Purge gas can comprise two or more or following air-flow.In other embodiments, tantalum precursor gas can comprise and exceed a kind of air-flow (being two or more air-flows).In other embodiments, nitrogen precursor gas can comprise and exceed a kind of air-flow (being two or more air-flows).
Other example of tantalum precursor comprises other metal organic precursor thing or their derivative, for example five (ethylmethyl amide base) tantalum (PEMAT; Ta (N (Et) Me)
5), five (diethylamide base) tantalum (PDEAT; Ta (NEt
2)
5) and the derivative of PEMAT, PDEAT or PDMAT, but not as limit.The example of other tantalum precursor also comprises TBTDET (Ta (NEt
2)
3nC
4h
9or C
16h
39n
4ta), halogenation tantalum (for example TaX
5, wherein X is fluorine (F), bromine (Br) or chlorine (Cl)) and/or their derivative, but not as limit.The example of other nitrogen precursor comprises nitrogen hydride (NxHy, x, y are integer), for example diamine (N
2h
4), dimethyl diamine ((CH
3)
2n
2h
2), tributyl diamine (C
4h
9n
2h
3), benzene diamine (C
6h
5n
2h
3), other diamine derivative, Nitrogen plasma source be (as N
2, N
2/ H
2, NH
3or N
2h
4plasma body), 2, tertiary the butane ((CH of 2 '-azo
3)
6c
2n
2), the ethyl nitrogen (C that changes
2h
5n
3) and other applicable gas, but not as limit.The example of other Purge gas or carrier gas comprises helium (He), nitrogen (N
2), hydrogen (H
2), other gas and their combination, but not as limit.
The formation of tantalum nitride layer can be tantalum precursor monolayer adsorption at the beginning on substrate, is then nitrogen precursor monolayer adsorption.Or the formation of tantalum nitride layer can be nitrogen precursor monolayer adsorption at the beginning on substrate, it is then tantalum precursor monolayer adsorption.In other embodiments, between pulse supply reactant gases, carry out alone that pump is emptying prevents that reactant gases from mixing again.
The pulse duration of tantalum precursor, the pulse duration of nitrogen precursor and the Purge gas interted between each reactant pulses the time that passes into visual sediment chamber used volume capacity and the vacuum system that couples with it and changing.For example, (1) gas constant pressure is lower, burst length that need to be longer; (2) gas flow is lower, improve and the time of stable constant pressure longer, burst length that need to be longer; (3) chamber volume is larger, the time of filled chamber longer so that it is longer to stablize time of constant pressure, burst length that need to be longer.Similarly, the interval time of each pulse, also volume capacity and the vacuum system that couples with it of visual treatment chamber changed.Generally speaking, the pulse duration of tantalum precursor or nitrogen precursor should enough allow compound monolayer adsorption.In one aspect, in the time that nitrogen precursor is supplied with in pulse, the pulse of tantalum precursor is still in chamber.Generally speaking, the time that passes into of Purge gas and/or pump emptying time should enough be grown and be enough to avoid tantalum precursor to mix in reaction zone with nitrogen precursor.
The burst length of tantalum precursor is generally approximately 1.0 seconds or following, and the burst length of nitrogen precursor is generally approximately 1.0 seconds or following, and this generally enough allows individual layer be adsorbed in turn on substrat structure.Be approximately 1.0 seconds or following the interval time of the pulse of tantalum precursor and the pulse of nitrogen precursor, be no matter continuously or pulse pass into Purge gas, this time is generally enough to avoid tantalum precursor to mix in reaction zone with nitrogen precursor.Certainly, extend burst length of reactant and can guarantee that tantalum precursor and nitrogen precursor adsorb, and can guarantee to remove byproduct of reaction the interval time that extends each reactant pulses.
During ald, substrate 210 can maintain below the heat decomposition temperature of the tantalum precursor of selecting generally.For the heater temperature of tantalum precursor, for example between approximately 20 DEG C to approximately 500 DEG C, and constant pressure is less than about 100Torr, is preferably less than 50Torr.If be PDMAT containing tantalum gas, heater temperature is preferably between approximately 100 DEG C to approximately 300 DEG C, and more preferably between approximately 175 DEG C to approximately 250 DEG C, and constant pressure is between extremely about 5.0Torr of about 1.0Torr.Other embodiment be should understand and other temperature and pressure range also can be adopted.For example, can adopt the temperature that is greater than heat decomposition temperature.But temperature should select to allow absorbing process tool exceed 50% deposition activity.In another embodiment, adopt temperature to be greater than heat decomposition temperature, so that decomposition amount between each precursor depositional stage is limited, the growth pattern that therefore growth pattern can similar ald.
The process implementing mode of utilizing the treatment chamber 200 of Fig. 1-4 to carry out ald tantalum nitride comprises five (dimethylformamide base) tantalums (PDMAT) from gas source 238 via valve 242a pulse supply, the flow of PDMAT is that about 100sccm is to about 1000sccm, preferred about 100sccm is to about 400sccm, and because of the small volume of reaction zone 264, thus the burst length be approximately 0.5 second or following, approximately 0.1 second or following or approximately 0.05 second or following.Be that about 100sccm is to about 1000sccm via valve 242b pulse supply from the flow of the ammonia of gas source 239, preferably 200sccm is to about 600sccm, and because of the small volume of reaction zone 264, thus the burst length be approximately 0.5 second or following, approximately 0.1 second or following or approximately 0.05 second or following.Can the purification of argon from gas source 240 without interruption via valve 242a, 242b, the flow of argon gas be about 100sccm to about 1000sccm, preferred about 100sccm is to about 400sccm.Because of the small volume of reaction zone 264, thus the interval time of the pulse of tantalum precursor and the pulse of nitrogen precursor be approximately 0.5 second or following, approximately 0.1 second or following or approximately 0.07 second or following.Believe that burst length that reactant gases and/or Purge gas are full of reaction zone 264 is required to be approximately 0.016 second or more than.Heater temperature preferably remains approximately 100 DEG C to approximately 300 DEG C, and constant pressure maintains and is about 1.0Torr to about 5.0Torr.The tantalum nitride thickness that the each circulation of this technique forms is approximately 0.5 dust
to approximately 1.0 dusts.Can repeatedly carry out above-mentioned alternate procedure until reach pre-determined thickness.
In one embodiment, the thickness that covers sidewall such as the settled layer of tantalum nitride layer is approximately 50 dusts or following.In another embodiment, the thickness of settled layer covering sidewall is approximately 20 dusts or following.In another embodiment, the thickness that settled layer covers sidewall is approximately 10 dusts or following.Thickness reaches approximately 10 dusts or following tantalum nitride layer is believed the blocking layer being enough to as preventing copper diffusion.In one aspect, thin barrier layer is conducive to fill the high aspect ratio submicron of (being for example greater than 5: 1) (being for example less than 0.15 micron) and less feature.Certainly the thickness of settled layer covering sidewall also can be greater than 50 dusts.
The embodiment of ald taking reactant monolayer adsorption on substrate as example illustrates as above.The present invention also comprises the embodiment of deposition greater or less than a reactant individual layer.The present invention also comprises not certainly to limit the embodiment of mode deposition reactant.The present invention also comprises the embodiment mainly depositing in succession or simultaneously carrying the chemical vapor deposition method of reactant.
Conflux/bypass type upper cover assembly
Figure 10 A-10F illustrates the chamber cap assembly 1032 for ALD technique according to another embodiment.As shown in Figure 10 A, chamber cap assembly 1032 comprises the cover cap 1072 of being located at cover plate 1070 middle portions.One end of gas duct 1050a couples and is communicated with cover cap 1072 fluids, and the other end of gas duct 1050a runs through cover plate 1070 and couples and be communicated with ALD valve and chemical precursor source fluid.In one embodiment, gas duct 1050a directly couples and distributes road 1028 fluids to be communicated with gas.Or gas duct 1050a for example indirectly couples via gas duct 1068a (Figure 10 F) and distributes road 1028 fluids to be communicated with gas.
Gas duct cover 1052 comprises at least one gas duct, maybe can comprise two, three or more gas duct.The gas duct that Figure 10 D-10E illustrates overlaps 1052 air inclusion conduit 1050b, 1050c.In one embodiment, one end of gas duct 1050b couples and is communicated with cover cap 1072 fluids, and the other end of gas duct 1050b extends through cover plate 1070 and couples and be communicated with ALD valve and chemical precursor source fluid.In another embodiment, gas duct 1050b or 1050c directly couple and distribute road 1028 fluids to be communicated with gas.Or gas duct 1050b or 1050c for example indirectly couple via gas duct 1068b (Figure 10 F) and distribute road 1028 to be communicated with for fluid with gas.
In some embodiments, conduit 1050c is available.One end of gas duct 1050c couples and is communicated with for fluid with cover cap 1072, the other end of gas duct 1050c extends through cover plate 1070 and couples and be that fluid is communicated with ALD valve and gas source, for example carrier gas source, purge gas source, plasma gas source or chemical precursor source.In another embodiment, gas duct 1050c couples and is that fluid is communicated with the upper surface of cover cap 1072.In another embodiment, gas duct 1050c for example sees through breeches joint and links gas duct 1050b, and couples and be that fluid is communicated with gas duct 1068b.
The chamber cap assembly 1032 of Figure 10 A-10F comprises cover cap 1072 and cover plate 1070, and wherein cover cap 1072 and cover plate 1070 form gas distribution road 1028.The optional land used of add-in card (not shown) can be placed between cover plate 1070 and cover cap 1072.Pin 1076 in groove 1074 connects cover plate 1070 and cover cap 1072 (Figure 10 D).Add-in card is used for adjusting for example, spacing between (strengthening) cover cap 1072 and cover plate 1070, can change thus the length in the gas distribution road 1028 being arranged in cover cap 1072 and cover plate 1070.In another embodiment, the add-in card being placed in alternatively between cover plate 1070 and cover cap 1072 contains stainless steel.In other embodiments, gas distributes road 1028 to be made up of single-material.
Depending on gas to be conveyed, chamber cap assembly 1032 can comprise cooling module and/or heating unit.The temperature of watch-keeping cubicle cap assemblies 1032 can avoid gas on chamber cap assembly 1032, to decompose, deposit or condensation.For example, cooling duct 1090 can be located in chamber cap assembly 1032, in order to cooling room cap assemblies 1032.In another embodiment, heating unit (not shown) can embed or around chamber cap assembly 1032, in order to heating chamber cap assemblies 1032.In one embodiment, can heat respectively or the part of cooling room cap assemblies 1032.For example, with reference to Figure 10 A, chamber cap assembly 1032 comprises cover plate 1070 and cover cap 1072, and its cover plate 1070 and cover cap 1072 form gas and distribute road 1028.Cover cap 1072 remains in a temperature range, and 1070 of cover plates remain in another temperature range.For example, be wound around or use other heating unit heating cover cap 1072 can prevent reactant gases condensation with heating zone, and cover plate 1070 maintains envrionment temperature.In another embodiment, can heat cover cap 1072 and utilize water channel cooling cover plate 1070, in order to avoid reactant gases carries out thermolysis on cover plate 1070.
The part that chamber cap assembly 1032 comprises can be made up of the applicable material of the aluminium of stainless steel, aluminium, nickel plating, nickel or other and pending processing compatibility.In one embodiment, cover cap 1072 and cover plate 1070 are manufacture separately, mechanical workout, forging, or they can be made up of metal, for example aluminium, aluminium alloy, steel, stainless steel, their alloy or their combination.
In one embodiment, gas distributes the lower surface 1060 of road 1028 and chamber cap assembly 1032 can comprise polishing minute surface, distributes the lower surface 1060 of road 1028 and chamber cap assembly 1032 to form laminar flow with assist gas along gas.In another embodiment, the inner face of gas duct 1050a, 1050b, 1050c, 1068a or 1068b can be through electropolishing, to help the gas that forms Laminar Flow.
In one embodiment, gas distributes the lower surface 1060 of inner face 1035a, 1035b, 1035c and the chamber cap assembly 1032 in road 1028 can comprise polishing minute surface, distributes the lower surface 1060 of road 1028 and chamber cap assembly 1032 to form laminar flow with assist gas along gas.In another embodiment, the inner face of gas duct 1050a, 1050b, 1050c can be through electropolishing, to help the gas that forms Laminar Flow.
In another embodiment, gas distributes the lower surface 1060 of inner face 1035a, 1035b, 1035c and chamber cap assembly 1032 in road 1028 can comprise the surface that uneven surface or mechanical treatment are crossed, to increase the surface-area on whole surface.Uneven surface more easily sticks together at inner face 1035a, 1035b, 1035c and lower surface 1060 material that gathers of not wishing to get.The film that the normal generation of gas-phase deposition is not wished to get, and may peel off and pollute substrate 1010 from inner face 1035a, 1035b, 1035c and lower surface 1060.In one embodiment, the mean roughness (R of inner face 1035a, 1035b and/or 1035c and lower surface 1060
a) be at least approximately 10 μ in, be for example that (m) to approximately 200 μ in, (approximately 5.08 μ m) for approximately 0.254 μ for approximately 10 μ in, preferably (m) to approximately 100 μ in, (m), more preferably from about (m) to approximately 80 μ in, (approximately 2.032 μ m) for approximately 0.762 μ for 30 μ in for approximately 2.54 μ for approximately 0.508 μ for approximately 20 μ in.In another embodiment, the mean roughness of inner face 1035a, 1035b and/or 1035c and lower surface 1060 be at least approximately 100 μ in (approximately 2.54 μ m), preferably between approximately 200 μ in (approximately 5.08 μ m)～approximately 500 μ in (approximately 12.7 μ m).
Figure 10 D-10F illustrates the cross section of chamber cap assembly 1032, and described chamber cap assembly 1032 comprises the gas distribution road 1028 that extends through cover plate 1070 middle portions.Gas distributes the bearing of trend in road 1028 to be generally the substrate that is positioned at chamber cap assembly 1032 belows during vertical ALD technique.Gas distributes road 1028 to extend through cover plate 1070 and support lower surface 1060 along the central shaft 1033 of cover cap 1072.Gas distributes similar conflux top and the hourglass of shunting bottom of containing of the geometrical shape in road 1028.The 1034a that confluxes is that gas distributes the part in road 1028, described in the 1034a that confluxes be positioned at gas and distribute the top 1037 in road 1028 and be tapered toward central shaft 1033.Runner 1034b is the part that gas distributes road 1028, and described runner 1034b is positioned at the bottom 1035 in gas distribution road 1028 and deviates from central shaft 1033 and is tapered.Throttle washer 1036 is for separating the thin narrow passage of conflux 1034a and runner 1034b.Gas distributes road 1028 further to extend across lower surface 1060 and enter reaction zone 1064.Gas distributes road 1028 to comprise inner face 1035a-1035c, and the 1034a that consequently confluxes has inner face 1035a, and runner 1034b has inner face 1035b, and cover plate 1070 has inner face 1035c.Lower surface 1060 extends to choker 1062 from runner 1034b.Lower surface 1060 is through configuration and adjust size substantially to cover the substrate being positioned at below chamber cap assembly 1032 during ALD technique.
The chamber cap assembly 1032 of Figure 10 A-10F can make substrate contact at least two gas sources or chemical precursor.In other embodiments, reconfigurable substrate contact pure gas source (as shown in Figure 5) or contact three or more gas sources or the chemical precursor (as shown in Figure 6) of making of gas delivery system 1130.
In Figure 10 E, when the process gas of air-flow 1020 is ringwise during by throttle washer 1036, annular steam 1020 is forced to distribute the number of turns that road 1028 central shafts 1033 expand similar but do not have more than the treatment chamber of throttle washer 1036 compared to structure around gas.Annular steam 1020 can comprise flow pattern, for example eddy current pattern, spiral pattern, the pattern that spirals, swirl patterns, distorting pattern, coiling pattern, swirl pattern or their derivative pattern.Annular steam 1020 distributes the central shaft 1033 in road 1028 to expand at least about 1 circle around gas, preferably at least about 1.5 circles, more preferably at least about 2 circles, more preferably at least about 3 circles, and more preferably at least about 4 circles or more than.
With reference to Figure 10 A-10F, can distribute the central shaft 1033 in road 1028 to be arranged to unspecified angle relation gas duct 1050a, 1050b, 1050c, 1068a, 1068b and gas inlet 1038a, 1038b and gas.Gas duct 1050a, 1050b, 1050c, 1068a or 1068b or gas inlet 1038a or 1038b preferred vertical central shaft 1033 (wherein+β ,-β=90 °) or make the medullary ray of each gas duct 1050a, 1050b, 1050c, 1068a or 1068b or gas inlet 1038a or 1038b and central shaft 1033 press from both sides one angle+β or-β (wherein as shown in the central shaft 1133 of Figure 11 C, 90 ° of 90 ° or 0 ° <-β < of 0 ° of <+β <).Gas duct 1050a, 1050b, 1050c, 1068a, 1068b and gas inlet 1038a, 1038b can be horizontally disposed with or can downward-sloping+β angle or be inclined upwardly-β angle perpendicular to central shaft 1033, make gas flow gas distribute road 1028 walls, but not directly down flowing to substrate, this contributes to reduce the possibility of blowing off substrate surface institute absorption reaction thing.In addition, gas duct 1050a, 1050b, 1050c, 1068a, 1068b can increase toward the diameter of gas inlet 1038a, 1038b gradually from line of pipes or ALD valve, distribute the front gas velocity that first slows down in road 1028 to help enter gas at gas.For example, the diameter of gas duct 1050a, 1050b, 1050c, 1068a, 1068b can increase gradually, or described gas duct can comprise the cumulative connected conduit of multiple internal diameters.
The gas that Figure 10 D-10F illustrates distributes road 1028 to phase down toward throttle washer 1036 along central shaft 1033 from top 1037 at the internal diameter of the 1034a that confluxes.Again, gas distributes road 1028 to increase gradually in abutting connection with the bottom 1035 of chamber cap assembly 1032 lower surfaces 1060 along central shaft 1033 is past from throttle washer 1036 at the internal diameter of runner 1034b.
In one embodiment, can there is following diameter for the treatment of the chamber cap assembly 1032 of the substrate of diameter 300mm.It is approximately 0.5 inch to approximately 2 inches at the diameter on top 1037 that gas distributes road 1028, preferably approximately 0.75 inch to approximately 1.5 inches, and more preferably from about 0.8 inch to approximately 1.2 inches, for example approximately 1 inch.It is approximately 0.1 inch to approximately 1.5 inches at the diameter of throttle washer 1036 that gas distributes road 1028, preferably approximately 0.3 inch to approximately 0.9 inch, and more preferably from about 0.5 inch to approximately 0.8 inch, for example approximately 0.66 inch.It is approximately 0.5 inch to approximately 2 inches at the diameter of bottom 1035 that gas distributes road 1028, preferably approximately 0.75 inch to approximately 1.5 inches, and more preferably from about 0.8 inch to approximately 1.2 inches, for example approximately 1 inch.
Above-mentioned size is applicable to supply the gas distribution road 1028 of about 500sccm to the total gas couette of about 3000sccm conventionally.In other specific implementations, variable-size is for specific gas traffic flow mistake.Generally speaking, gas flow is larger, and gas distributes the required diameter dimension in road 1028 larger.
The phase is not limited to theory, believe that gas distributes the diameter in road 1028 to distribute the top 1037 in road 1028 reduce and distribute the bottom 1035 in road 1028 to increase from throttle washer 1036 toward gas toward throttle washer 1036 from gas, make to distribute by gas 1028 the less adiabatic expansion of γ-ray emission, this contributes to control the process gas temperature in annular steam 1020.For example, entering gas via gas inlet 1038a, 1038b distributes the gas in road 1028 to produce suddenly adiabatic expansion will to cause gas temperature to decline, and cause gas to condense and form drop.On the other hand, believe that tapered gas distributes road 1028 can make the less adiabatic expansion of γ-ray emission.Therefore there are more heat and gaseous interchange, therefore by controlling peripheral part temperature (being the temperature of watch-keeping cubicle cap assemblies 1032) gas temperature more easy to control of gas.Gas distributes road 1028 to be tapered, and can comprise one or more taper inner face, for example tapered plane, concave surface, convex surface or their combination, or can comprise the segment (i.e. a part be not taper for taper, a part) of one or more taper inner face.
In one embodiment, as shown in Figure 10 F, the contiguous gas of gas inlet 1038a, 1038b distributes the top 1037 in road 1028.In other embodiments, one or more gas inlet 1038a, 1038b distribute the total length in road 1028 to be located between top 1037 and bottom 1035 along gas.
The medullary ray of gas duct 1050a, 1050b, 1050c, 1068a or 1068b distributes respectively spoke footpath wire clamp one angle [alpha] in road 1028 with gas, this similar Figure 11 C, wherein medullary ray 1176a, the 1176b of gas duct 1150a, 1150b respectively with spoke footpath wire clamp one angle [alpha] of distributing 1028 centers by gas.The entrance that gas enters gas duct 1050a, 1050b, 1050c, 1068a, 1068b preferably with inclination alpha (, 0 ° of α >) arrange, gas is flowed according to the circumferential direction of annular steam 1020 (Figure 10 E) indication.With inclination alpha supply gas directly flow to expand channel wall (, α=0 °) contribute to form laminar flow but not turbulent flow distribute 1028 by gas.Believe that laminar flow distributes 1028 to be conducive to remove the gas distribution inner face in road 1028 and other surface of chamber cap assembly 1032 by gas.In comparison, turbulent flow can not flow through inner face and other surface that gas distributes road 1028 equably, and may contain the dead angle that air-flow cannot arrive at.In one aspect, gas duct 1050a, 1050b, 1050c, 1068a, 1068b and corresponding gas inlet 1038a, 1038b each interval separate, and with same circumferential direction (being clockwise or inverse clock) guiding air-flow.
The phase is not limited to theory, and Figure 10 E-10F is the sectional view that the gas of chamber cap assembly 1032 distributes road 1028, and this sectional view shows gas gas coming through and distributes in road 1028.Distribute 1028 flow pattern by gas although can not know for sure, believe annular steam 1020 (Figure 10 E) can adopt annularly flow pattern and flow through gas and distribute road 1028, described annularly flow pattern for example eddying flow, helicoidal flow, spiral that mobile, mobile, the fast eddy flow that turns round and round is moving, distortion is flowed, reel flow, tortuously flow, curlingly flow, swirl flow, they derivative flowed or their combination is flowed.Annularly flow is formed at " treatment zone " but not separate the space of substrate.In one aspect, because of the whole inner face in eddying flow pattern sweep gas distribution road 1028, therefore annular steam 1020 contributes to more effectively vent gas to distribute road 1028.
With reference to Figure 10 D, chamber cap assembly 1032 lower surfaces 1060 of at least a portion distribute road 1028 to be tapered toward chamber cap assembly 1032 peripheral part from gas, and the favor speed waveform that provides gas to distribute 1028 flowing through substrate surfaces, road (from substrate center to substrate perimeter) from gas is provided.Lower surface 1060 can comprise one or more conical surface, for example plane, concave surface, convex surface or their combination.In one embodiment, lower surface 1060 is tapered funnel-form.
In one embodiment, lower surface 1060 is downward-sloping passes through chamber cap assembly 1032 lower surfaces 1060 to the speed difference of substrate to reduce process gas, and then makes substrate surface uniform contact reactant gases.In one embodiment, the flow section between lower surface 1060 and substrate surface that chamber cap assembly 1032 is downward-sloping, the maximum area in described cross section and the ratio of minimum area are less than approximately 2, are preferably less than approximately 1.5, are more preferably less than approximately 1.3, and are more preferably 1.
The phase is not limited to theory, believes that air-flow crosses substrate surface with the speed of homogeneous more and can make gas be deposited on more equably on substrate.Believe that gas velocity is proportional to gas concentration, be therefore proportional to gas aggradation in the speed of substrate surface.Therefore the first substrate surface area is with respect to the second substrate surface area faster for gas velocity, there is gas aggradation speed faster first area.The chamber cap assembly 1032 of believing the downward-sloping lower surface 1060 of tool can supplied gas be deposited on whole substrate surface more equably, and this is because lower surface 1060 provides the more speed of homogeneous, therefore that gas spreads all over the concentration of substrate surface is more even.
Figure 10 C-10E illustrates the choker 1062 that is arranged at chamber cap assembly 1032 peripheral part of the contiguous periphery of placing substrate place during ALD technique.In the time that chamber cap assembly 1032 assembling forms treatment zone around of substrates, choker 1062 can comprise arbitrary restriction gas stream crosses the element of substrate perimeter near zone.
As shown in Figure 10 A-10D, the chamber cap cover 1080 with handle 1082 can cover cover plate 1070 upper surfaces of cover cap 1072, gas duct 1050a, gas duct cover 1052 and a part.The temperature of chamber cap assembly 1032 can be by liquid-cooling system control, and described liquid-cooling system connects water jacket, for example, extend through the cooling duct 1090 of cover plate 1070.Such as the cooling fluid flow overcooling road 1090 of water and remove the heat of cover plate 1070.Refrigerant connecting piece 1092a, 1092b are connected to cooling duct 1090 by flexible pipe or pipe.The other end of refrigerant connecting piece 1092a, 1092b is connected to fluid source and fluid recovery device by flexible pipe or pipe, the cooling system of for example, establishing in or independently cooling system.Refrigerant connecting piece 1092a, 1092b are connected to cover plate 1070 by bracing frame 1094.The liquid that flows through cooling duct 1090 can comprise water, oil, ethanol, ethylene glycol, glycol ether or other organic solvent.In one embodiment, the temperature of cover plate 1070 or chamber cap assembly 1032 can maintain between approximately 0 DEG C to approximately 100 DEG C, preferably between approximately 18 DEG C to approximately 65 DEG C, more preferably from about between 20 DEG C to approximately 50 DEG C.
Figure 11 A-11C illustrates the schematic diagram of an embodiment for the treatment of chamber 1100, and described treatment chamber 1100 comprises the gas delivery system 1130 that is applicable to ALD technique.The chamber body 1102 that treatment chamber 1100 comprises tool sidewall 1104 and bottom 1106.The slit valve 1108 for the treatment of chamber 1100 can be for mechanism (not shown) turnover treatment chamber 1100 for example, to transmit and to fetch substrate 1110, the semiconductor wafer of 200mm or 300mm or glass substrate.
Substrate support 1112 is supported in substrate 1110 on the substrate continuing surface 1111 in treatment chamber 1100.Substrate support 1112 is provided with up and-down motor 1114, in order to improve and to reduce substrate support 1112 and to be placed on the substrate 1110 on substrate support 1112.The lifter plate 1116 that connects up and-down motor 1118 is located in treatment chamber 1100, in order to improve and to reduce the removable lifter pin 1120 through substrate support 1112.Substrate support 1112 can comprise vacuum suction seat (not shown), electrostatic chuck (not shown) or pincers ring (not shown), with the substrate 1110 on stationary substrate strut member 1112 during depositing operation.
Be placed on substrate 1110 temperature on substrate support 1112 by the temperature control of adjusting substrate support 1112.For example, can use such as resistance heater (not shown) etc. to be embedded type heating unit heated substrate strut member 1112, or can be with heating such as being located at the radiant heat such as the heating lamp (not shown) of substrate support 1112 tops.Purify ring 1122 and can be placed on substrate support 1112, provide Purge gas to substrate 1110 peripheral part to make purification channel 1124, in order to avoid settling is deposited on substrate 1110.
Gas delivery system 1130 is located at the top of chamber body 1102, for example, in order to supply with treatment chamber 1100 gases, process gas and/or Purge gas.The gas delivery system 1130 of Figure 11 A-11C can make substrate 1110 contact at least two gas sources or chemical precursor.In other embodiments, the reconfigurable substrate 1110 that makes of gas delivery system 1130 contacts pure gas source (as shown in Figure 5) or contact three or more gas sources or chemical precursor (as shown in Figure 6).Vacuum system 1178 connects suction road 1179, and so that arbitrary predetermined gas is discharged outside treatment chamber 1100, and the suction district 1166 of assist process chamber 1100 maintains the pressure that is expectation or the pressure range that remains on expectation.
In one embodiment, gas delivery system 1130 comprises chamber cap assembly 1132, and the gas that these gas delivery system 1130 tools extend through chamber cap assembly 1132 middle portions distributes road 1128.It is vertical substrates continuing surface 1111 that gas distributes the bearing of trend in road 1128, and distributes the central shaft 1133 in road 1128 to extend through cover plate 1170 and support lower surface 1160 along gas.The 1134a that confluxes is that gas distributes the part in road 1128, described in the 1134a that confluxes be positioned at gas and distribute the top 1137 in road 1128 and be tapered toward central shaft 1133.Runner 1134b is the part that gas distributes road 1128, and described runner 1134b is positioned at the bottom 1135 in gas distribution road 1128 and deviates from central shaft 1133 and is tapered.Throttle washer 1131 is for separating the thin narrow passage of conflux 1134a and runner 1134b.Gas distributes road 1128 further to extend across lower surface 1160 and enter reaction zone 1164.Lower surface 1160 extends to choker 1162 from runner 1134b.Lower surface 1160 is through configuration and adjust size to be located substantially on the substrate 1110 on the substrate continuing surface 1111 of substrate support 1112.
When the process gas of air-flow 1174 is ringwise during by throttle washer 1131, described annular steam 1174 is forced to distribute the number of turns that the central shaft 1133 in road 1128 is expanded construct similar but do not have more than the treatment chamber of throttle washer 1131 around gas.Annular steam 1174 can comprise flow pattern, for example eddy current pattern, spiral pattern, the pattern that spirals, swirl patterns, distorting pattern, coiling pattern, swirl pattern or their derivative pattern.Annular steam 1174 distributes the central shaft 1133 in road 1128 to expand at least about 1 circle around gas, preferably at least about 1.5 circles, more preferably at least about 2 circles, more preferably at least about 3 circles, and more preferably at least about 4 circles or more than.
Gas distributes road 1128 to have gas inlet 1136a, 1136b, and in order to the air-flow from two groups of similar valve 1142a/1152a, 1142b/1152b to be provided, described gas inlet 1136a, 1136b can provide together or individually.In a structure, valve 1142a and valve 1142b couple different reacting gas sources, but preferably couple same purge gas source.For example, valve 1142a couples reacting gas source 1138, and valve 1142b couples reacting gas source 1139, and two valve 1142a, 1142b all couple purge gas source 1140.Valve 1142a, 1142b comprise line of pipes 1143a, the 1143b of tool valve component 1144a, 1144b separately, and valve 1152a, 1152b comprise purge lines 1145a, the 1145b of tool valve component 1146a, 1146b separately.Line of pipes 1143a, 1143b with reacting gas source 1138,1139 for fluid is communicated with, and gas to distribute gas inlet 1136a, the 1136b in road 1128 be that fluid is communicated with.Valve component 1144a, the 1144b of line of pipes 1143a, 1143b controls reactant gases and flows to gas distribution road 1128 from reacting gas source 1138,1139.Purge lines 1145a, 1145b with purge gas source 1140 for fluid is communicated with, and crossing with line of pipes 1143a, the 1143b of the valve component 1144a of line of pipes 1143a, 1143b, 1144b downstream part.Valve component 1146a, the 1146b of purge lines 1145a, 1145b controls Purge gas and flows to gas distribution road 1128 from purge gas source 1140.For example, if carrier gas is used for the reactant gases of transport of reactant gases body source 1138,1139, preferably identical (, using argon gas as carrier gas and Purge gas) of carrier gas and Purge gas.
Valve component 1144a, 1144b, 1146a, 1146b respectively can comprise dividing plate (not shown) and valve seat (not shown).Apply bias voltage or driven and can open or close dividing plate.Dividing plate can be pneumatic type or electrodynamictype.Pneumavalve comprises can be purchased from the pneumavalve of the Veriflo branch of Fujikin company and Parker Han Ni Fen company (Park Hannifin Corp.).Motorized valve comprises can be purchased from the motorized valve of Fujikin company.For example, ALD valve can adopt Fujikin model FPR-UDDFAT-21-6.35-PI-ASN or Fujikin model FPR-NHDT-21-6.35-PA-AYT.Logic controller 1148a, the 1148b of programmable couple valve 1142a, 1142b, in order to control valve component 1144a, the 1144b of starting valve 1142a, 1142b, the dividing plate of 1146a, 1146b.The gas pulses cycle that pneumavalve produces can be low to moderate approximately 0.020 second.The gas pulses cycle that motorized valve produces can be low to moderate approximately 0.005 second.Motorized valve generally need use the driving mechanism of contact valve and programmable logic controller.
Valve 1142a, 1142b can be respectively zero dead volume valve, and described valve can, in the time that valve component 1144a, 1144b close, rinse the reactant gases of line of pipes 1143a, 1143b.For example, purge lines 1145a, 1145b can arrange valve component 1144a, the 1144b in abutting connection with line of pipes 1143a, 1143b.In the time that valve component 1144a, 1144b close, purge lines 1145a, 1145b can supply Purge gas and rinse line of pipes 1143a, 1143b.In one embodiment, purge lines 1145a, 1145b are slightly separated by with valve component 1144a, the 1144b of line of pipes 1143a, 1143b, and so Purge gas is opened Shi Buhui in valve component 1144a, 1144b and directly sent into valve component 1144a, 1144b.Refer to that at this zero dead volume valve valve has insignificant dead volume (be dead volume differ be decided to be zero).
Each group valve 1142a/1152a, 1142b/1152b can be used to provide combination air-flow and/or indivedual air-flow of reactant gases and Purge gas.With reference to valve 1142a/1152a, the combination air-flow example of reactant gases and Purge gas comprises that the Purge gas Continuous Flow of purge gas source 1140 crosses the reactant gases stream of pulses of purge lines 1145a and reacting gas source 1138 and cross line of pipes 1143a.By opening the dividing plate of valve component 1146a of purge lines 1145a, can Purge gas without interruption.By opening and close the dividing plate of valve component 1144a of line of pipes 1143a, reactant gases that can pulse supply reacting gas source 1138.With reference to valve 1142a/1152a, indivedual air-flow examples of reactant gases and Purge gas comprise the purge lines 1145a and from the Purge gas pulse of purge gas source 1140 and flow through line of pipes 1143a and the reactant gases pulse from reacting gas source 1138 of flowing through.By opening and close the dividing plate of valve component 1146a of purge lines 1145a, can pulse supply Purge gas.By opening and close the dividing plate of valve component 1144a of line of pipes 1143a, reactant gases that can pulse supply reacting gas source 1138.
Line of pipes 1143a, the 1143b of valve 1142a, 1142b can be connected to gas inlet 1136a, 1136b via gas duct 1150a, 1150b.Gas duct 1150a, 1150b can be integral component or the separation assembly of valve 1142a, 1142b.In one aspect, valve 1142a, 1142b next-door neighbour gas distributes road 1128, so can reduce line of pipes 1143a, 1143b and gas duct 1150a, 1150b unnecessary configuration volume between valve 1142a, 1142b and gas inlet 1136a, 1136b.
Figure 11 C illustrates the central shaft 1133 in gas duct 1150a, 1150b and gas inlet 1136a, 1136b and gas distribution road 1128 is arranged to multiple angles relation.Gas duct 1150a, 1150b and gas inlet 1136a, 1136b preferred vertical central shaft 1133 (wherein+β ,-β=90 °) or make medullary ray 1176a, the 1176b of gas duct 1150a, 1150b and central shaft 1133 press from both sides one angle+β or-β (wherein 90 ° of 90 ° or 0 ° <-β < of 0 ° of <+β <).Gas duct 1150a, 1150b can be horizontally disposed with or can downward-sloping+β angle or be inclined upwardly-β angle perpendicular to central shaft 1133, make gas flow gas distribute road 1128 walls, but not directly down flowing to substrate 1110, this contributes to reduce the possibility of the reactant adsorbing on substrate 1110 surfaces of blowing off.In addition, gas duct 1150a, 1150b can increase toward the diameter of gas inlet 1136a, 1136b gradually from line of pipes 1143a, the 1143b of valve 1142a, 1142b, distribute the front gas velocity that first slows down in road 1128 to help enter gas at gas.For example, the internal diameter of gas duct 1150a, 1150b can increase gradually, or described gas duct can comprise the cumulative connected conduit of multiple internal diameters.
Figure 11 C illustrates gas and distributes road 1128 to phase down toward throttle washer 1131 along central shaft 1133 from top 1137 at the internal diameter of the 1134a that confluxes.Again, gas distributes road 1128 to increase gradually in abutting connection with the bottom 1135 of chamber cap assembly 1132 lower surfaces 1160 along central shaft 1133 is past from throttle washer 1131 at the internal diameter of runner 1134b.In one embodiment, there is following size for the treatment of the treatment chamber 1100 of the substrate of diameter 300mm.It is approximately 0.5 inch to approximately 2 inches at the diameter on top 1137 that gas distributes road 1128, preferably approximately 0.75 inch to approximately 1.5 inches, and more preferably from about 0.8 inch to approximately 1.2 inches, for example approximately 1 inch.It is approximately 0.1 inch to approximately 1.5 inches at the diameter of throttle washer 1131 that gas distributes road 1128, preferably approximately 0.3 inch to approximately 0.9 inch, and more preferably from about 0.5 inch to approximately 0.8 inch, for example approximately 0.66 inch.It is approximately 0.5 inch to approximately 2 inches at the diameter of bottom 1135 that gas distributes road 1128, preferably approximately 0.75 inch to approximately 1.5 inches, and more preferably from about 0.8 inch to approximately 1.2 inches, for example approximately 1 inch.
Above-mentioned size is applicable to supply the gas distribution road 1128 of about 500sccm to the gas flow of about 3000sccm conventionally.In other specific implementations, variable-size is for specific gas traffic flow mistake.Generally speaking, gas flow is larger, and gas distributes the required diameter dimension in road 1128 larger.
The phase is not limited to theory, believe that gas distributes the diameter in road 1128 distributes road 1128 top 1137 from gas reduce and distribute the bottom 1135 in road 1128 to increase can to allow the less adiabatic expansion of γ-ray emission of distributing 1128 by gas from throttle washer 1131 toward gas toward throttle washer 1131, this contributes to control the process gas temperature in annular steam 1174.For example, entering gas via gas inlet 1136a, 1136b distributes the gas in road 1128 to produce suddenly adiabatic expansion will to cause gas temperature to decline, and cause gas to condense and form drop.On the other hand, believe that tapered gas distributes road 1128 can make the less adiabatic expansion of γ-ray emission.Therefore there are more heat and gaseous interchange, therefore by controlling peripheral part temperature (being the temperature of watch-keeping cubicle cap assemblies 1132) gas temperature more easy to control of gas.Gas distributes road 1128 to be tapered, and can comprise one or more taper inner face, for example tapered plane, concave surface, convex surface or their combination, or can comprise the segment (i.e. a part be not taper for taper, a part) of one or more taper inner face.
In one embodiment, the contiguous gas of gas inlet 1136a, 1136b distributes the top 1137 in road 1128.In other embodiments, one or more gas inlet 1136a, 1136b distribute the total length in road 1128 to be located between top 1137 and bottom 1135 along gas.
The medullary ray of gas duct 1150a, 1150b can distribute respectively spoke footpath wire clamp one angle [alpha] in road 1128 with gas, be similar to Figure 11 C, wherein medullary ray 1176a, the 1176b of gas duct 1150a, 1150b respectively with spoke footpath wire clamp one angle [alpha] of distributing 1128 centers by gas.The entrance that gas enters gas duct 1150a, 1150b preferably arranges with inclination alpha (, 0 ° of α >), and gas is flowed according to the circumferential direction of annular steam 1174 (Figure 11 B-11C) indication.With inclination alpha supply gas directly flow to expand channel wall (, α=0 °) contribute to form laminar flow but not turbulent flow distribute 1128 by gas.Believe that laminar flow distributes 1128 to be conducive to remove the gas distribution inner face in road 1128 and other surface of chamber cap assembly 1132 by gas.In comparison, turbulent flow can not flow through inner face and other surface that gas distributes road 1128 equably, and may contain the dead angle that air-flow cannot arrive at.In one aspect, gas duct 1150a, 1150b and corresponding gas inlet 1136a, 1136b each interval separate, and with same circumferential direction (being clockwise or inverse clock) guiding air-flow.
The phase is not limited to theory, and Figure 11 C is the sectional view that the gas of chamber cap assembly 1132 distributes road 1128, and this sectional view shows gas gas coming through and distributes in road 1128.Distribute 1128 flow pattern by gas although can not know for sure, believe that annular steam 1174 (Figure 11 B-11C) can adopt annularly flow pattern to flow through gas and distribute road 1128, described annularly flow pattern for example eddying flow, helicoidal flow, spiral that mobile, mobile, the fast eddy flow that turns round and round is moving, distortion is flowed, reel flow, tortuously flow, curlingly flow, swirl flow, they derivative flowed or their combination is flowed.As shown in Figure 11 C, annularly flow is formed at " treatment zone " but not the space that separates with substrate 1110.In one aspect, because of the whole inner face in eddying flow pattern sweep gas distribution road 1128, therefore annular steam 1174 contributes to more effectively vent gas to distribute road 1128.
In one embodiment, flow while crossing substrate 1110 surface when not expecting to spiral, the distance 1175 in Figure 11 C between gas inlet 1136a, 1136b and substrate 1110 is enough to allow annular steam 1174 dissipate and flow downwards.Believe that annular steam 1174 is to advance with layer flow mode, so can effectively remove the surface of chamber cap assembly 1132 and substrate 1110.In a specific implementations, the distance 1175 between top 1137 and the substrate 1110 in gas distribution road 1128 is approximately 3 inches to approximately 8 inches, preferably approximately 3.5 inches to approximately 7 inches, and more preferably from about 4 inches to approximately 6 inches, for example approximately 5 inches.
Being that the 1134a that confluxes distributes the length along central shaft 1133 between the top 1137 in road 1128 and throttle washer 1131 at the interior gas of cover cap 1172 apart from 1177a, is runner 1134b length along central shaft 1133 between the interior throttle washer 1131 of cover cap 1172 and cover cap 1172 lower surfaces 1173 apart from 1177b.In one embodiment, be approximately 1 inch to approximately 4 inches apart from 1177a, preferably approximately 1.25 inches to approximately 3 inches, more preferably from about 1.5 inches to approximately 2.5 inches, for example 2 inches; Be approximately 0.5 inch to approximately 4 inches apart from 1177b, preferably approximately 1 inch to approximately 3 inches, more preferably from about 1.25 inches to approximately 1.75 inches, for example approximately 1.5 inches.
With reference to Figure 11 A, chamber cap assembly 1132 lower surfaces 1160 of at least a portion distribute road 1128 to be tapered toward chamber cap assembly 1132 peripheral part from gas, and the favor speed waveform that provides gas to distribute 1128 flowing through substrate 1110 surfaces (from substrate center to substrate perimeter), road from gas is provided.Lower surface 1160 can comprise one or more conical surface, for example plane, concave surface, convex surface or their combination.In one embodiment, lower surface 1160 is tapered funnel-form.
In one embodiment, lower surface 1160 is downward-sloping passes through chamber cap assembly 1132 lower surfaces 1160 to the speed difference of substrate 1110 to reduce air-flow, and then makes substrate 1110 surface uniform contact reacts gases.In one embodiment, flow section between the lower surface 1160 that chamber cap assembly 1132 is downward-sloping and substrate 1110 surfaces, the maximum area in described cross section and the ratio of minimum area are less than approximately 2, are preferably less than approximately 1.5, be more preferably less than approximately 1.3, and be more preferably 1.
The phase is not limited to theory, believes that air-flow crosses substrate 1110 surfaces with the speed of homogeneous more and can make gas be deposited on more equably on substrate 1110.Believe that gas velocity is proportional to gas concentration, be therefore proportional to gas aggradation in the speed on substrate 1110 surfaces.Therefore the first surface region of substrate 1110 overdraught speed is with respect to second surface region, there is gas aggradation speed faster in first surface region.The chamber cap assembly 1132 of believing the downward-sloping lower surface 1160 of tool can supplied gas be deposited on whole substrate 1110 surfaces more equably, and this is because lower surface 1160 has produced the more speed of homogeneous, therefore that gas spreads all over the concentration on substrate 1110 surfaces is more even.
Figure 11 A illustrates the choker 1162 of chamber cap assembly 1132 peripheral part that are positioned at adjacent substrate 1110 peripheries.When chamber cap assembly 1132 is assembled with in the time that substrate 1110 surroundings form treatment zone, the element that choker 1162 comprises arbitrary restriction gas flowing through substrate 1110 periphery near zones.
In a specific implementations, choker 1162 is approximately 0.04 inch to approximately 2.0 inches with the spacing of substrate support 1112, preferably approximately 0.04 inch to approximately 0.2 inch.Spacing can change according to delivering gas and deposition process conditions.Utilize choker 1162 to separate the pressure uneven distribution district of reaction zone 1164 and suction district 1166 (Figure 11 A), can make the pressure distribution in volume or the reaction zone 1164 between chamber cap assembly 1132 and substrate 1110 more even.
With reference to Figure 11 A, in one aspect, because reaction zone 1164 and suction district 1166 have separated, therefore reactant gases or Purge gas only need appropriateness to fill reaction zone 1164, allow the abundant contact reacts gas of substrate 1110 or Purge gas.In traditional chemical vapour deposition, the chamber of prior art needs simultaneously and evenly supplies the extremely whole substrate surface of combination air-flow of reactant gases, to guarantee that reactant gases is equably in the surperficial interreaction of whole substrate 1110.In ald, treatment chamber 1100 is introduced reactant gases in succession to substrate 1110 surfaces, makes reactant interlaminate be adsorbed in substrate 1110 surfaces.Therefore ald does not need reactant gases to arrive at substrate 1110 surfaces simultaneously.Needing on the contrary to supply enough reactant gasess makes reactant thin layer be adsorbed in substrate 1110 surfaces.
Because the internal volume of the volume ratio traditional C VD chamber of reaction zone 1164 is little, therefore need less gas volume to fill the reaction zone 1164 of the special process that carries out ald program.For example, taking the chamber embodiment of substrate of processing diameter 200mm as example, the volume of reaction zone 1164 is about 1000cm
3or less, preferred about 500cm3 or less, more preferably from about 200cm
3or less.Taking the chamber embodiment of substrate of processing diameter 300mm as example, the volume of reaction zone 1164 is about 3000cm
3or less, preferred about 1500cm
3or less, more preferably from about 600cm
3or less.In one embodiment, can raise or reduce substrate support 1112 to adjust reaction zone 1164 volumes for depositing.The volume of reaction zone 1164 is less, needs the deposition gas scale of construction or the purified gas scale of construction of inflow treatment chamber 1100 fewer.Because gas usage reduces, thus can improve treatment chamber 1100 production capacities and reduce waste, and then cut operating costs.
As shown in Figure 11 A-11C, chamber cap assembly 1132 comprises cover cap 1172 and cover plate 1170, and wherein cover cap 1172 and cover plate 1170 form gas distribution road 1128.Add-in card maybe can be placed between cover plate 1170 and cover cap 1172.In other embodiments, gas distributes road 1128 to be made up of single-material.
Depending on gas to be conveyed, chamber cap assembly 1132 can comprise cooling module and/or heating unit.The temperature of watch-keeping cubicle cap assemblies 1132 can avoid gas on chamber cap assembly 1132, to decompose, deposit or condensation.For example, water channel (as the cooling duct 1090 of Figure 10 A) can be located in chamber cap assembly 1132, in order to cooling room cap assemblies 1132.In another embodiment, heating unit (not shown) can be embedded or around the part of chamber cap assembly 1132, in order to heating chamber cap assemblies 1132.In one embodiment, can heat respectively or the part of cooling room cap assemblies 1132.For example, with reference to Figure 11 A, chamber cap assembly 1132 comprises cover plate 1170 and cover cap 1172, and its cover plate 1170 and cover cap 1172 form gas and distribute road 1128.Cover cap 1172 remains in a temperature range, and 1170 of cover plates remain in another temperature range.For example, be wound around or use other heating unit heating cover cap 1172 can prevent reactant gases condensation with heating zone, and cover plate 1170 maintains and is peripheral part temperature.In another embodiment, can heat cover cap 1172 and utilize water channel cooling cover plate 1170, in order to avoid reactant gases carries out thermolysis on cover plate 1170.
The part that chamber cap assembly 1132 comprises can be made up of the aluminium of stainless steel, aluminium, nickel plating, nickel, their alloy or other applicable material.In one embodiment, cover cap 1172 and cover plate 1170 are manufacture separately, mechanical workout, forging, or they can be made up of metal, for example aluminium, aluminium alloy, steel, stainless steel, their alloy or their combination.
In one embodiment, gas distributes inner face (comprising the inner face of cover plate 1170 and cover cap 1172) and the lower surface 1160 of chamber cap assembly 1132 in road 1128 to comprise polishing minute surface, distributes the lower surface 1160 of road 1128 and chamber cap assembly 1132 to form laminar flow with assist gas along gas.In another embodiment, the inner face of gas duct 1150a, 1150b can be through electropolishing, to help the gas that forms Laminar Flow.
In another embodiment, gas distributes the inner face (comprising the inner face of cover plate 1170 and cover cap 1172) in road 1128 and the lower surface 1160 of chamber cap assembly 1132 to comprise the surface that uneven surface or mechanical treatment are crossed, to increase the surface-area on whole surface.Uneven surface makes the material that gathers of not wishing to get more easily stick together inner face and the lower surface 1160 with cover cap 1172 at cover plate 1170.The film that the normal generation of gas-phase deposition is not wished to get, and may distribute road 1128 inner faces to peel off and pollute substrate 1110 from lower surface 1160 and gas.In one embodiment, lower surface 1160 and/or gas distribute the mean roughness (Ra) of road 1128 inner faces to be at least approximately 10 μ in, be for example that (m) to approximately 200 μ in, (approximately 5.08 μ m) for approximately 0.254 μ for approximately 10 μ in, preferably (m) to approximately 100 μ in, (m), more preferably from about (m) to approximately 80 μ in, (approximately 2.032 μ m) for approximately 0.762 μ for 30 μ in for approximately 2.54 μ for approximately 0.508 μ for approximately 20 μ in.In another embodiment, lower surface 1160 and/or gas distribute the mean roughness of road 1128 inner faces be at least approximately 100 μ in (approximately 2.54 μ m), preferably between approximately 200 μ in (approximately 5.08 μ m)～approximately 500 μ in (approximately 12.7 μ m).
The control unit 1180 such as such as programmable Personal Computer, workstation computer that Figure 11 A illustrates is for coupling treatment chamber 1100, in order to control processing condition.For example, in the different steps of substrate processing program, control unit 1180 is used for controlling and flows through valve 1142a, 1142b from process gas and the Purge gas of each gas source 1138,1139,1140.For instance, control unit 1180 comprises central processing unit (CPU) 1182, supports circuit 1184 and have the internal memory 1186 of relevant control software 1183.
Control unit 1180 can be the general-purpose computer processor of arbitrary type, and described control unit 1180 can be used for industry setting and controls various chambers and sub-processor.CPU 1182 can use arbitrary applicable internal memory 1186, for example random access memory, read-only storage, floppy disk, hard disk or other near-end or long-range digital storage.Various support circuit can connect CPU 1182, in order to support treatment chamber 1100.Control unit 1180 can be connected to the controller of another contiguous independent chamber part, programmable logic controller 1148a, the 1148b of for example valve 1142a, 1142b.Seeing through many signal wires (be referred to as below signal bus 1188, part be plotted in Figure 11 A) can operation control unit 1180 and the two-way communication of other assembly for the treatment of chamber 1100.Except controlling the process gas of gas source 1138,1139,1140 and programmable logic controller 1148a, the 1148b of Purge gas and valve 1142a, 1142b, control unit 1180 is also responsible for automatically controlling the action of other processing wafer, for example transmit wafer, control temperature, emptying chamber etc., described control section will be illustrated in elsewhere herein.
With reference to Figure 11 A-11C, when operation, mechanism (not shown) is sent to treatment chamber 1100 via slit valve 1108 by substrate 1110.Lifter pin 1120 pulls together substrate 1110 to be put on substrate support 1112 with mechanism.Substrate support 1112 lifts substrate 1110 and makes the lower surface 1160 of substrate 1110 near chamber cap assembly 1132.Together or individually (being pulse supply) utilized valve 1142a to inject the first air-flow to the gas for the treatment of chamber 1100 to distribute road 1128 and utilize valve 1142b to inject the second air-flow to treatment chamber 1100.The first air-flow can comprise from the Purge gas without interruption of purge gas source 1140 with from the reactant gases of the pulse supply of reacting gas source 1138, maybe can comprise from the reactant gases of the pulse supply of reacting gas source 1138 with from the Purge gas of the pulse supply of purge gas source 1140.The second air-flow can comprise from the Purge gas without interruption of purge gas source 1140 with from the reactant gases of the pulse supply of reacting gas source 1139, maybe can comprise from the reactant gases of the pulse supply of reacting gas source 1139 with from the Purge gas of the pulse supply of purge gas source 1140.Annular steam 1174 distributes road 1128 with the eddying flow mode gas of passing through, and uses sweep gas and distributes the whole inner face in road 1128.Annular steam 1174 dissipates and flows downwards towards substrate 1110 surfaces.In the time that gas gas coming through distributes road 1128, gas velocity can slow down.Air-flow is followed the surface of flowing through substrate 1110 and the lower surface 1160 of chamber cap assembly 1132.The downward-sloping lower surface 1160 of chamber cap assembly 1132 contributes to reduce air-flow and crosses the speed difference on substrate 1110 surfaces.Air-flow then flows through choker 1162 and enters the suction district 1166 for the treatment of chamber 1100.Excess air, by product etc. will flow into suction road 1179, then be discharged outside treatment chamber 1100 by vacuum system 1178.In one aspect, air-flow distributes between road 1128 and substrate 1110 surfaces and chamber cap assembly 1132 lower surfaces 1160 with the layer flow mode gas of passing through, and so can make the surperficial of reactant gases uniform contact substrate 1110 and effectively remove the inner face of chamber cap assembly 1132.
The treatment chamber 1100 of Figure 11 A-11C has multinomial feature.In one aspect, the 1164 volume ratio traditional C VD chambers, reaction zone that treatment chamber 1100 provides are little.The reactant gases that 1100 need for the treatment of chamber are less or Purge gas are filled the reaction zone 1164 of carrying out special process.In another aspect, the chamber cap assembly 1132 that treatment chamber 1100 provides has downward-sloping or is funnelform lower surface 1160, so can reduce the air-flow speed difference of chamber cap assembly 1132 bottom surfaces to substrate 1110 of passing through.In aspect another, the speed that air flow stream is passed through can slow down in the gas distribution road 1128 that treatment chamber 1100 provides.More on the one hand in, the gas duct that treatment chamber 1100 provides presss from both sides an angle [alpha] with the center in gas distribution road 1128.Treatment chamber 1100 is the tool further feature described in elsewhere herein also.Other chamber embodiment for ald comprises one or more above-mentioned feature.
Multichannel injection type upper cover assembly
Figure 12 A-12E, 13A-13C, 14A-14C illustrate according to another embodiment as multichannel injection type upper cover assembly and for the schematic diagram of the chamber cap assembly 1232 of ALD technique.As shown in Figure 12 A, chamber cap assembly 1232 comprises the cover cap 1272 of being located at cover plate 1270 middle portions.One end of gas duct 1250a couples and is communicated with cover cap 1272 fluids, and the other end of gas duct 1250a runs through cover plate 1270 and couples and be communicated with ALD valve and/or chemical precursor source or gas source fluid.Or, one end of gas duct 1250a extends through cover plate 1270, and can be coupled to chemical precursor source or gas source and be communicated with chemical precursor source or gas source fluid, and ALD valve is positioned between gas duct 1250a and cover plate 1270, for example, be positioned at cover plate 1270 top (not shown).Gas duct 1250a couples and is communicated with gas passage 1268a fluid, and described gas passage 1268a crosses multichannel for precursor gas stream and injects substrate 1269.Gas passage 1268a couples and is that fluid is communicated with gas joint ring 1264a, and this gas joint ring 1264a is communicated with (Figure 12 E, 13C and 14A-14C) via slit 1266a and gas distribution road 1228 for fluid.
Gas duct cover 1252 comprises at least one gas duct, maybe can comprise two, three or more gas duct.The gas duct that Figure 12 C illustrates overlaps 1252 air inclusion conduit 1250b, 1250c.In one embodiment, one end of gas duct 1250b couple and with cover cap 1272 for fluid is communicated with, the other end of gas duct 1250b runs through cover plate 1270 and couples and be that fluid is communicated with ALD valve and chemical precursor source.Or, one end of gas duct 1250b extends through cover plate 1270, and can be coupled to chemical precursor source or gas source and be communicated with chemical precursor source or gas source fluid, and ALD valve is positioned between gas duct 1250a and cover plate 1270, for example, be positioned at cover plate 1270 top (not shown).In one embodiment, gas duct 1250b or 1250c couple separately or together and are communicated with gas passage 1268b fluid.Gas duct 1250b couples and is communicated with gas passage 1268b fluid, and described gas passage 1268b crosses multichannel for precursor gas stream and injects substrate 1269.Gas passage 1268b couples and is communicated with gas joint ring 1264b fluid, and gas joint ring 1264b distributes road 1228 fluids to be communicated with (Figure 14 A-14C) via slit 1266b with gas.
In some embodiments, conduit 1250c is available.One end of gas duct 1250c couples and is communicated with for fluid with cover cap 1272, the other end of gas duct 1250c extends through cover plate 1270 and couples and be communicated with ALD valve and/or gas source fluid, for example carrier gas source, purge gas source, plasma gas source or chemical precursor source.In another embodiment, gas duct 1250c couples and is communicated with the upper surface fluid of cover cap 1272.In another embodiment, gas duct 1250c for example sees through breeches joint and links conduit 1250b, and couples and be that fluid is communicated with gas passage 1268b.
The chamber cap assembly 1232 of Figure 12 A-12E, 13A-13C, 14A-14C comprises the multichannel injection substrate 1269 that is placed in cover cap 1272 and cover plate 1270 tops.Multichannel is injected substrate 1269, cover cap 1272 and cover plate 1270 and is formed gas distribution road 1228.Multichannel is injected substrate 1269 and is formed the top 1237 that gas distributes road 1228, and 1270 of cover plates form the bottom 1235 that gas distributes road 1228.Add-in card maybe can be placed between cover plate 1270 and cover cap 1272.In other embodiments, gas distributes road 1228 to be made up of single-material.
Figure 12 D-12E illustrates the gas passage 1268a, the 1268b that inject substrate 1269 through multichannel.Multichannel is injected that cover 1267 can be located at that multichannel is injected on the protuberance 1261 of substrate 1269 and is injected cover 1267 and multichannel in multichannel and inject and between substrate 1269, form gas joint ring 1264a.Similar, multichannel is injected that substrate 1269 can be located on cover cap 1272 and is injected and between substrate 1269 and cover cap 1272, form gas joint ring 1264b in multichannel.Pin 1265 can inject the hole 1263 of cover 1267 and put in multichannel through multichannel and inject the groove 1275 of substrate 1269, so that those parts are fixed together.Similarly, the pin 1277 in groove 1275 connects multichannel and injects substrate 1269 and cover cap 1272 (Figure 12 C), and pin 1276 in groove 1274 connects cover plate 1270 and cover cap 1272 (Figure 13 C).When deposition, the first process gas can be walked around gas joint ring 1264a and the inflow gas distribution road 1228 by slit 1266a from gas passage 1268a.Similarly, the second process gas can be walked around gas joint ring 1264b and the inflow gas distribution road 1228 by slit 1266b from gas passage 1268b.
Slit 1266a, 1266b make gas joint ring 1264a, 1264b distribute road 1228 to communicate with gas.Slit 1266a, 1266b can press from both sides an angle with central shaft 1233, for example, roughly distribute road 1228 to be tangent relationship with central shaft 1233 or gas.In one embodiment, it is approximately 0 ° to approximately 90 ° that the positive tangential gas of slit 1266a, 1266b distributes the angle in road 1228, preferably approximately 0 ° to approximately 45 °, and more preferably from about 0 ° to approximately 20 °.
Depending on gas to be conveyed, chamber cap assembly 1232 can comprise cooling module and/or heating unit.The temperature of watch-keeping cubicle cap assemblies 1232 can avoid gas on chamber cap assembly 1232, to decompose, deposit or condensation.For example, cooling duct 1290 can be located in chamber cap assembly 1232, in order to cooling room cap assemblies 1232.In another embodiment, heating unit (not shown) can be embedded or around the part of chamber cap assembly 1232, in order to heating chamber cap assemblies 1232.In one embodiment, can be during technique the part of heating or cooling room cap assemblies 1232 respectively.For example, with reference to Figure 13 C, chamber cap assembly 1232 comprises multichannel and injects substrate 1269, cover plate 1270 and cover cap 1272, and its cover plate 1270 and cover cap 1272 form gas and distribute road 1228.Multichannel is injected substrate 1269 and is remained on a temperature with cover cap 1272, and 1270 of cover plates remain on another temperature.For example, be wound around or use other heating unit heating multichannel injection substrate 1269 can prevent reactant gases condensation with cover cap 1272 with heating zone, and cover plate 270 maintains envrionment temperature.In another embodiment, can heat multichannel and inject substrate 1269 with cover cap 1272 and utilize water channel cooling cover plate 1270, in order to avoid reactant gases carries out thermolysis on cover plate 1270.In another embodiment, can inject substrate 1269 and cover cap 1272 to one temperature by heating zone or other heating unit heating multichannel, and cover plate 1270 can be heated to a temperature independently, this temperature lower than, be equal to or greater than multichannel and inject the temperature of substrate 1269 and cover cap 1272.
The part that chamber cap assembly 1232 comprises can be made up of the material of the aluminium of stainless steel, aluminium, nickel plating, nickel or other applicable technique.In one embodiment, multichannel is injected substrate 1269, cover cap 1272 and cover plate 1270 is manufacture separately, mechanical workout, forging, or they can be made up of metal, for example aluminium, aluminium alloy, steel, stainless steel, their alloy or their combination.In one embodiment, the add-in card that optional land used is placed between the two contains stainless steel.
In one embodiment, gas distributes inner face 1231 (comprising the inner face of cover plate 1270 and cover cap 1272) and the lower surface 1260 of chamber cap assembly 1232 in road 1228 to comprise polishing minute surface, distributes the lower surface 1260 of road 1228 and chamber cap assembly 1232 to form laminar flow with assist gas along gas.
In another embodiment, gas distributes the inner face 1231 (comprising the inner face of cover plate 1270 and cover cap 1272) in road 1228 and the lower surface 1260 of chamber cap assembly 1232 to comprise the surface that uneven surface or mechanical treatment are crossed, to increase the surface-area on whole surface.Uneven surface more easily sticks together at inner face 1231 and lower surface 1260 material that gathers of not wishing to get.The rete that the normal generation of gas-phase deposition is not wished to get, and may peel off and pollute substrate 1210 from inner face 1231 and lower surface 1260.In one embodiment, the mean roughness (R of lower surface 1260 and/or inner face 1231
a) be at least approximately 10 μ in, be for example that (m) to approximately 200 μ in, (approximately 5.08 μ m) for approximately 0.254 μ for approximately 10 μ in, preferably (m) to approximately 100 μ in, (m), more preferably from about (m) to approximately 80 μ in, (approximately 2.032 μ m) for approximately 0.762 μ for 30 μ in for approximately 2.54 μ for approximately 0.508 μ for approximately 20 μ in.In another embodiment, the mean roughness of lower surface 1260 and/or inner face 1231 be at least approximately 100 μ in (approximately 2.54 μ m), preferably between approximately 200 μ in (approximately 5.08 μ m)～approximately 500 μ in (approximately 12.7 μ m).
Figure 13 A and 14A-14C illustrate the cross section of chamber cap assembly 1232, and described chamber cap assembly 1232 comprises the gas distribution road 1228 that extends through cover plate 1270 middle portions.Gas joint ring 1264a, 1264b distribute road 1228 and central shaft 1233 ring-types to extend around gas.Gas distributes the bearing of trend in road 1228 to be generally the substrate that is positioned at chamber cap assembly 1232 belows during vertical ALD technique.Gas distributes road 1228 to extend through cover plate 1270 and support lower surface 1260 along the central shaft 1233 of cover cap 1272.Gas distributes road 1228 further to extend across lower surface 1260 and enter reaction zone 1064.Lower surface 1260 extends to choker 1262 from runner 1034b.Lower surface 1260 is through configuration and adjust size to be positioned at the substrate of chamber cap assembly 1232 belows during substantially covering ALD technique.
The chamber cap assembly 1232 of Figure 13 A and 14A-14C can make substrate contact at least two gas sources or chemical precursor.In other embodiments, reconfigurable substrate contact pure gas source (as shown in Figure 5) or contact three or more gas sources or the chemical precursor (as shown in Figure 6) of making of chamber cap assembly 1232.
In Figure 14 B-14C, when the process gas of air-flow 1220 is ringwise during by point 1236, annular steam 1220 is forced to distribute the number of turns that the central shaft 1233 in road 1228 is expanded construct similar but do not have a little more than 1236 treatment chamber around gas.Annular steam 1220 can comprise flow pattern, for example eddy current pattern, spiral pattern, the pattern that spirals, swirl patterns, distorting pattern, coiling pattern, swirl pattern or their derivative pattern.Annular steam 1220 distributes the central shaft 1233 in road 1228 to expand at least about 1 circle around gas, preferably at least about 1.5 circles, and more preferably at least about 2 circles, more preferably at least about 3 circles, and more preferably at least about 4 circles or more.
In one embodiment, the gas that Figure 13 C and 14C illustrate distributes road 1228 substantially to remain unchanged toward the internal diameter of point 1236 from top 1237 along central shaft 1233.In another embodiment, gas distribute road 1228 from top 1237 internal diameter along central shaft 1233 toward point 1236 for increasing gradually or phasing down (not shown).But gas distributes the internal diameter in road 1228 from putting 1236 along central shaft 1233 toward increasing gradually in abutting connection with the bottom 1235 of chamber cap assembly 1232 lower surfaces 1260.
In one example, there is following diameter for the treatment of the chamber cap assembly 1232 of the substrate of diameter 300mm.It is approximately 0.5 inch to approximately 2 inches at the diameter on top 1237 that gas distributes road 1228, preferably approximately 0.75 inch to approximately 1.5 inches, and more preferably from about 0.8 inch to approximately 1.2 inches, for example approximately 1 inch.It is approximately 0.5 inch to approximately 2 inches at the diameter of point 1236 that gas distributes road 1228, preferably approximately 0.75 inch to approximately 1.5 inches, and more preferably from about 0.8 inch to approximately 1.2 inches, for example approximately 1 inch.It is approximately 1 inch to approximately 4 inches at the diameter of bottom 1235 that gas distributes road 1228, preferably approximately 1.5 inches to approximately 3 inches, and more preferably from about 1.6 inches to approximately 2.4 inches, for example approximately 2 inches.In one embodiment, above-mentioned size is applied to gas distribution road 1228 and is applicable to supply the gas flow of about 500sccm to about 3000sccm.In other embodiments, variable-size is for specific gas traffic flow mistake.
Believe that tapered gas distributes road 1228 can make the less adiabatic expansion of γ-ray emission.Therefore there are more heat and gaseous interchange, therefore by controlling peripheral part temperature (being the temperature of watch-keeping cubicle cap assemblies 1232) gas temperature more easy to control of gas.Gas distributes road 1228 to be tapered, and can comprise one or more taper inner face, for example tapered plane, concave surface, convex surface or their combination, or can comprise the segment (i.e. a part be not taper for taper, a part) of one or more taper inner face.
In one embodiment, as shown in Figure 14 A～14C, gas joint ring 1264a, 1264b distribute the top 1237 in road 1228 around gas.In other embodiments, one or more gas joint ring 1264a, 1264b distributes the total length in road 1228 to be located at the different positions between top 1237 and bottom 1235 along gas.
The phase is not limited to theory, and Figure 14 B-14C illustrates the different views in the gas distribution road 1228 of chamber cap assembly 1232, shows gas gas coming through and distributes in road 1228.Distribute 1228 flow pattern by gas although can not know for sure, believe annular steam 1220 can adopt annularly flow pattern and flow through gas by slit 1266a, 1266b and distribute road 1228, described shape flow pattern for example eddying flow, helicoidal flow, spiral that mobile, mobile, the fast eddy flow that turns round and round is moving, distortion is flowed, reel flow, tortuously flow, curlingly flow, swirl flow, they derivative flowed or their combination is flowed.Annularly flow is formed at " treatment zone " but not the space that separates with substrate.In one aspect, because of the whole inner face in eddying flow pattern sweep gas distribution road 1228, therefore annular steam 1220 contributes to more effectively vent gas to distribute road 1228.
Figure 12 C, 13B-13C and 14C illustrate that chamber cap assembly 1232 lower surfaces 1260 of at least a portion distribute road 1228 to be tapered toward chamber cap assembly 1232 peripheral part from gas, and the favor speed waveform that provides gas to distribute 1228 flowing through substrate surfaces, road (from substrate center to substrate perimeter) from gas is provided.Lower surface 1260 can comprise one or more conical surface, for example plane, concave surface, convex surface or their combination.In one embodiment, lower surface 1260 is tapered funnel-form.
In one embodiment, lower surface 1260 is downward-sloping passes through chamber cap assembly 1232 lower surfaces 1260 to the speed difference of substrate to reduce air-flow, and then makes substrate surface uniform contact reactant gases.In one embodiment, the flow section between lower surface 1260 and substrate surface that chamber cap assembly 1232 is downward-sloping, the maximum area in described cross section and the ratio of minimum area are less than approximately 2, are preferably less than approximately 1.5, are more preferably less than approximately 1.3, and are more preferably 1.
The phase is not limited to theory, believes that air-flow crosses substrate surface with the speed of homogeneous more and can make gas be deposited on more equably on substrate.Believe that gas velocity is proportional to gas concentration, be therefore proportional to gas aggradation in the speed of substrate surface.Therefore the first substrate surface area is with respect to the second substrate surface area faster for gas velocity, there is gas aggradation speed faster in first surface region.The chamber cap assembly 1232 of believing the downward-sloping lower surface 1260 of tool can supplied gas be deposited on whole substrate surface more equably, and this is because lower surface 1260 has produced the more speed of homogeneous, therefore that gas spreads all over the concentration of substrate surface is more even.
Figure 12 C and 13C illustrate the choker 1262 that is positioned at peripheral part of the chamber cap assembly 1232 that is adjacent to the periphery of placing substrate place during ALD technique.In the time that chamber cap assembly 1232 assembles to form treatment zone in substrate surrounding, choker 1262 comprises arbitrary restriction gas stream crosses the element of substrate perimeter near zone.
As shown in Figure 13 A-13B, the chamber cap cover 1280 with handle 1282 can cover cover plate 1270 upper surfaces of cover cap 1272, gas duct 1250a, gas duct cover 1252 and a part.The temperature of chamber cap assembly 1232 can be by liquid-cooling system control, and described liquid-cooling system connects water jacket, for example, extend through the cooling duct 1290 of cover plate 1270.Such as the cooling fluid flow overcooling road 1290 of water and remove the heat of cover plate 1270.Refrigerant connecting piece 1292a, 1292b are connected to cooling duct 1290 by flexible pipe or pipe.The other end of refrigerant connecting piece 1292a, 1292b is connected to fluid source and fluid recovery device by flexible pipe or pipe, the cooling system of for example, establishing in or independently cooling system.Refrigerant connecting piece 1292a, 1292b are connected to cover plate 1270 by bracing frame 1294.The liquid that flows through cooling duct 1290 can comprise water, oil, ethanol, ethylene glycol, glycol ether or other organic solvent.In one embodiment, the temperature of cover plate 1270 or chamber cap assembly 1232 can maintain between approximately 0 DEG C to approximately 100 DEG C, preferably between approximately 18 DEG C to approximately 65 DEG C, more preferably from about between 20 DEG C to approximately 50 DEG C.
The schematic diagram of the embodiment that Figure 15 A-15C illustrates, described treatment chamber 1500 comprises the gas delivery system 1530 for ALD technique.The chamber body 1502 that treatment chamber 1500 comprises tool sidewall 1504 and bottom 1506.The slit valve 1508 for the treatment of chamber 1500 can be for mechanism (not shown) turnover treatment chamber 1500 for example, to transmit and to fetch substrate 1510, the semiconductor wafer of 200mm or 300mm or glass substrate.
Substrate support 1512 supports the substrate 1510 on substrate continuing surface 1511 in treatment chamber 1500.Substrate support 1512 is provided with up and-down motor 1514, in order to improve and to reduce substrate support 1512 and to be placed on the substrate 1510 on substrate support 1512.The lifter plate 1516 that connects up and-down motor 1518 is located in treatment chamber 1500, in order to improve and to reduce the removable lifter pin 1520 through substrate support 1512.Substrate support 1512 can comprise vacuum suction seat (not shown), electrostatic chuck (not shown) or pincers ring (not shown), with the substrate 1510 on stationary substrate strut member 1512 during depositing operation.
Substrate 1510 temperature that are placed on it by adjusting the temperature control of substrate support 1512.For example, can use such as resistance heater (not shown) etc. to be embedded type heating unit heated substrate strut member 1512, or can be with heating such as being located at the radiant heat such as the heating lamp (not shown) of substrate support 1512 tops.Purify ring 1522 and can be placed on substrate support 1512, provide Purge gas to substrate 1510 peripheral part to limit purification channel 1524, in order to avoid in settling deposition substrate 1510.
Gas delivery system 1530 is located at the top of chamber body 1502, for example, in order to supply with treatment chamber 1500 gases, process gas and/or Purge gas.The gas delivery system 1530 of Figure 15 A-15C can make substrate 1510 contact at least two gas sources or chemical precursor.In other embodiments, the reconfigurable substrate 1510 that makes of gas delivery system 1530 contacts pure gas source (as shown in Figure 5) or contact three or more gas sources or chemical precursor (as shown in Figure 6).Vacuum system 1578 connects suction road 1579, and so that arbitrary predetermined gas is discharged outside treatment chamber 1500, and the suction district 1566 of assist process chamber 1500 maintains the pressure that is expectation or the pressure range that remains on expectation.
In one embodiment, gas delivery system 1530 comprises chamber cap assembly 1532, and the gas that described gas delivery system 1530 tools extend through chamber cap assembly 1532 middle portions distributes road 1534.It is vertical substrates continuing surface 1511 that gas distributes the bearing of trend in road 1534, and distributes the central shaft 1533 in road 1534 to extend through cover plate 1570 and support lower surface 1560 along gas.In one embodiment, portion gas distributes road 1534 to be substantially cylindric along the central shaft 1533 in top 1537, and the central shaft 1533 that portion gas distributes 1534, road to deviate from bottom 1535 is tapered.Gas distributes road 1534 more to extend across lower surface 1560 and enter reaction zone 1564.Lower surface 1560 distributes the bottom 1535 in road 1534 to extend to choker 1562 from gas.Lower surface 1560 is through configuration and adjust size to be located substantially on the substrate 1510 on the substrate continuing surface 1511 of substrate support 1512.
In the time that the process gas of air-flow 1574 is advanced along central shaft 1533 ringwise, described annular steam 1574 distributes the central shaft 1533 in road 1534 to expand being forced to around gas.Annular steam 1574 can comprise flow pattern, for example eddy current pattern, spiral pattern, the pattern that spirals, swirl patterns, distorting pattern, coiling pattern, swirl pattern or their derivative pattern.Annular steam 1574 distributes the central shaft 1533 in road 1534 to expand at least about 1 circle around gas, preferably at least about 1.5 circles, and more preferably at least about 2 circles, better 3 circles that are at least about, good 4 circles or more that are at least about again again.
Gas distributes road 1534 to have gas inlet 1536a, 1536b, and in order to the air-flow from two groups of similar valve 1542a/1552a, 1542b/1552b to be provided, described gas inlet can provide together or individually.In a structure, valve 1542a and valve 1542b couple different reacting gas sources, but preferably couple same purge gas source.For example, valve 1542a couples reacting gas source 1538, and valve 1542b couples reacting gas source 1539, and two valve 1542a, 1542b all couple purge gas source 1540.Valve 1542a, 1542b comprise line of pipes 1543a, the 1543b of tool valve component 1544a, 1544b separately, and valve 1552a, 1552b comprise purge lines 1545a, the 1545b of tool valve component 1546a, 1546b separately.Line of pipes 1543a, 1543b are with reacting gas source 1538,1539 for fluid is communicated with, and to distribute gas inlet 1536a, the 1536b in road 1534 with gas be that fluid is communicated with.Valve component 1544a, the 1544b of line of pipes 1543a, 1543b controls reactant gases and flows to gas distribution road 1534 from reacting gas source 1538 and 1539.Purge lines 1545a, 1545b connect purge gas source 1540, and crossing with line of pipes 1543a, the 1543b of the valve component 1544a of line of pipes 1543a, 1543b, 1544b downstream part.Valve component 1546a, the 1546b of purge lines 1545a, 1545b controls Purge gas and flows to gas distribution road 1534 from purge gas source 1540.For example, if carrier gas is used for the reactant gases of transport of reactant gases body source 1538 and 1539, preferably identical (, using argon gas as carrier gas and Purge gas) of carrier gas and Purge gas.
Valve component 1544a, 1544b, 1546a, 1546b respectively can comprise dividing plate (not shown) and valve seat (not shown).Apply bias voltage or driven and can open or close dividing plate.Dividing plate can be pneumatic type or electrodynamictype.Pneumavalve comprises can be purchased from the pneumavalve of the Veriflo branch of Fujikin company and Parker Han Ni Fen company (Park Hannifin Corp.).Motorized valve comprises can be purchased from the motorized valve of Fujikin company.For example, ALD valve can adopt Fujikin model FPR-UDDFAT-21-6.35-PI-ASN or Fujikin model FPR-NHDT-21-6.35-PA-AYT.Logic controller 1548a, the 1548b of programmable couple valve 1542a, 1542b, in order to control valve component 1544a, the 1544b of starting valve 1542a, 1542b, the dividing plate of 1546a, 1546b.The gas pulses cycle that pneumavalve produces can be low to moderate approximately 0.020 second.The gas pulses cycle that motorized valve produces can be low to moderate approximately 0.005 second.Motorized valve generally need use the driving mechanism of contact valve and programmable logic controller.
Valve 1542a, 1542b can be respectively zero dead volume valve, and described valve can, in the time that valve component 1544a, 1544b close, rinse the reactant gases of line of pipes 1543a, 1543b.For example, purge lines 1545a, 1545b can arrange valve component 1544a, the 1544b in abutting connection with line of pipes 1543a, 1543b.In the time that valve component 1544a, 1544b close, purge lines 1545a, 1545b can supply Purge gas and rinse line of pipes 1543a, 1543b.In one embodiment, purge lines 1545a, 1545b are slightly separated by with valve component 1544a, the 1544b of line of pipes 1543a, 1543b, and so Purge gas is opened Shi Buhui in valve component 1544a, 1544b and directly sent into valve component 1544a, 1544b.Refer to that at this zero dead volume valve valve has insignificant dead volume (be dead volume differ be decided to be zero).
Each group valve 1542a/1552a, 1542b/1552b can be used to provide combination air-flow and/or indivedual air-flow of reactant gases and Purge gas.With reference to valve 1542a/1552a, the combination air-flow example of reactant gases and Purge gas comprises from the continuous purification gas stream of purge gas source 1540 and the purge lines 1545a that flows through with from the reactant gases pulse of reacting gas source 1538 and the line of pipes 1543a that flows through.By opening the dividing plate of valve component 1546a of purge lines 1545a, can Purge gas without interruption.By opening and close the dividing plate of valve component 1544a of line of pipes 1543a, reactant gases that can pulse supply reacting gas source 1538.With reference to valve 1542a/1552a, indivedual air-flow examples of reactant gases and Purge gas comprise from the Purge gas pulse of purge gas source 1540 and the purge lines 1545a that flows through with from the reactant gases pulse of reacting gas source 1538 and the line of pipes 1543a that flows through.By opening and close the dividing plate of valve component 1546a of purge lines 1545a, can pulse supply Purge gas.By opening and close the dividing plate of valve component 1544a of line of pipes 1543a, reactant gases that can pulse supply reacting gas source 1538.
Line of pipes 1543a, the 1543b of valve 1542a, 1542b can be connected to gas inlet 1536a, 1536b via gas duct 1550a, 1550b.Gas duct 1550a, 1550b can be integral component or the separation assembly of valve 1542a, 1542b.In one aspect, valve 1542a, 1542b next-door neighbour gas distributes road 1534, so can reduce line of pipes 1543a, 1543b and gas duct 1550a, 1550b unnecessary configuration volume between valve 1542a, 1542b and gas inlet 1536a, 1536b.
The phase is not limited to theory, believe that it is immobilize and distribute bottom 1535 increases in road 1534 allow to distribute by gas 1534 the less adiabatic expansion of γ-ray emission from specified point toward gas to specified point that gas distributes the diameter in road 1534 distributes road 1534 top 1537 along central shaft 1533 from gas, this contributes to control the process gas temperature in annular steam 1574.For example, the gas that enters gas distribution road 1534 produces suddenly adiabatic expansion and will cause gas temperature to decline, and causes gas to condense and forms drop.On the other hand, believe that tapered gas distributes road 1534 can make the less adiabatic expansion of γ-ray emission.Therefore there are more heat and gaseous interchange, therefore by controlling peripheral part temperature (being the temperature of watch-keeping cubicle cap assemblies 1532) gas temperature more easy to control of gas.Gas distributes road 1534 to be tapered, and can comprise one or more taper inner face, for example tapered plane, concave surface, convex surface or their combination, or can comprise the segment (i.e. a part be not taper for taper, a part) of one or more taper inner face.
Figure 15 B～15C illustrates gas and moves to the passage that gas distributes road 1534, in embodiment, it is discussed at this.Process gas enters gas knot ring 1568a and 1568b by gas duct 1550a, 1550b transmission by gas inlet 1536a, 1536b, and enters gas distribution road 1534 by slit 1569a and 1569b.The path that illustrate Figure 15 B process gas or precursor gas move, namely enters gas knot ring 1568a by gas duct 1550a by gas inlet 1536a, enters gas distribute road 1534 by slit 1569a.The second path (mirror image of for example Figure 15) enters gas knot ring 1568b by gas duct 1550b by gas inlet 1536b, enters gas and distributes road 1534, by slit 1569b as shown in Figure 15 C.These roads are through all distributing the top 1537 in road 1534 around gas.
Slit 1569a and 1569b provide by gas knot ring 1568a and 1568b and distribute the fluid in road 1534 to be communicated with to gas.Slit 1569a and 1569b can be an angle setting with respect to central shaft 1533, for example, be tangential to central shaft 1533 or gas and distribute road 1534.In one embodiment, slit 1569a and 1569b can be through settings and distribute road 1534 tangent one angles with gas, and this angle is for example between approximately 0 °～approximately 90 °, preferably between approximately 0 °～approximately 45 °, and more preferably between approximately 0 °～approximately 20 °.
The phase is not limited to theory, and Figure 15 C is the sectional view that the gas of chamber cap assembly 1532 distributes road 1534, shows gas gas coming through and distributes in road 1534.Distribute 1534 flow pattern by gas although can not know for sure, believe annular steam 1574 (Figure 15 C) can adopt annularly flow pattern and flow through gas by slit 1569a and 1569b and distribute road 1534, described annularly flow pattern as eddying flow, helicoidal flow, spiral that mobile, mobile, the fast eddy flow that turns round and round is moving, distortion is flowed, reel flow, tortuously flow, curlingly flow, swirl flow, they derivative flowed or their combination is flowed.As shown in Figure 15 C, annularly flow is formed at " " but not the space separating with substrate 1510, treatment zone.In one aspect, because of the whole inner face in eddying flow pattern sweep gas distribution road 1534, therefore annular steam 1574 contributes to more effectively vent gas to distribute road 1534.
In one embodiment, Figure 15 C illustrates that distance 1575 refers to the position 1576b that distributes 1534 tops 1537, road from the position 1576a on substrate 1510 surfaces to gas.Flow when not expecting to spiral while crossing substrate 1510 surface, distance 1575 is enough to allow annular steam 1574 dissipate and flow downwards.Believe that annular steam 1574 is to advance with layer flow mode, so can effectively remove the surface of chamber cap assembly 1532 and substrate 1510.In another embodiment, the length that distance 1575 or gas distribute road 1534 to extend along central shaft 1533 is approximately 3 inches to approximately 9 inches, preferably approximately 3.5 inches to approximately 7 inches, and more preferably from about 4 inches to approximately 6 inches, for example approximately 5 inches.
Figure 15 A illustrates that chamber cap assembly 1532 lower surfaces 1560 of at least a portion distribute road 1534 to be tapered toward chamber cap assembly 1532 peripheral part from gas, and the favor speed waveform that provides gas to distribute 1534 flowing through substrate 1510 surfaces (from substrate center to substrate perimeter), road from gas is provided.Lower surface 1560 can comprise one or more conical surface, for example plane, concave surface, convex surface or their combination.In one embodiment, lower surface 1560 is tapered funnel-form.
In one embodiment, lower surface 1560 is downward-sloping passes through chamber cap assembly 1532 lower surfaces 1560 to the speed difference of substrate 1510 to reduce air-flow, and then makes substrate 1510 surface uniform contact reacts gases.In one embodiment, flow section between the lower surface 1560 that chamber cap assembly 1532 is downward-sloping and substrate 1510 surfaces, the maximum area in described cross section and the ratio of minimum area are less than approximately 2, are preferably less than approximately 1.5, be more preferably less than approximately 1.3, and more preferably from about 1.
The phase is not limited to theory, believes that air-flow crosses substrate 1510 surfaces with the speed of homogeneous more and can make gas be deposited on more equably on substrate 1510.Believe that gas velocity is proportional to gas concentration, be therefore proportional to gas aggradation in the speed on substrate 1510 surfaces.Therefore the first surface region of substrate 1510 overdraught speed is with respect to second surface region, there is gas aggradation speed faster in first surface region.The chamber cap assembly 1532 of believing the downward-sloping lower surface 1560 of tool can supplied gas be deposited on whole substrate 1510 surfaces more equably, and this is because lower surface 1560 has produced the more speed of homogeneous, therefore that gas spreads all over the concentration on substrate 1510 surfaces is more even.
Figure 15 A illustrates the choker 1562 of chamber cap assembly 1532 peripheral part that are positioned at adjacent substrate 1510 peripheries.In the time that chamber cap assembly 1532 assembles to form treatment zone in substrate 1510 surrounding, the element that choker 1562 comprises arbitrary restriction gas flowing through substrate 1510 periphery near zones.
In a specific implementations, choker 1562 is approximately 0.04 inch to approximately 2.0 inches with the spacing of substrate support 1512, preferably approximately 0.04 inch to approximately 0.2 inch.Spacing can change according to delivering gas and deposition process conditions.Utilize choker 1562 to separate the pressure uneven distribution district of reaction zone 1564 and suction district 1566 (Figure 15 A), can make the pressure distribution in volume or the reaction zone 1564 between chamber cap assembly 1532 and substrate 1510 more even.
With reference to Figure 15 A, in one aspect, because reaction zone 1564 and suction district 1566 have separated, therefore reactant gases or Purge gas only need appropriateness to fill reaction zone 1564, allow the abundant contact reacts gas of substrate 1510 or Purge gas.In traditional chemical vapour deposition, the chamber of prior art needs simultaneously and evenly supplies the extremely whole substrate surface of combination air-flow of reactant gases, to guarantee that reactant gases is equably in the surperficial interreaction of whole substrate 1510.In ald, treatment chamber 1500 is introduced reactant gases in succession to substrate 1510 surfaces, makes reactant interlaminate be adsorbed in substrate 1510 surfaces.Therefore ald does not need reactant gases to arrive at substrate 1510 surfaces simultaneously.Needing on the contrary to supply enough reactant gasess makes reactant thin layer be adsorbed in substrate 1510 surfaces.
Because the volume of reaction zone 1564 is little compared to the internal volume of traditional C VD chamber, therefore need less gas volume to fill the reaction zone 1564 of the special process that carries out ald program.For example, taking the chamber embodiment of substrate of processing diameter 200mm as example, the volume of reaction zone 1564 is about 1000cm
3or less, preferred about 500cm
3or less, more preferably from about 200cm
3or less.Taking the chamber embodiment of substrate of processing diameter 300mm as example, the volume of reaction zone 1564 is about 3000cm
3or less, preferred about 1500cm
3or less, more preferably from about 600cm
3or less.In one embodiment, can raise or reduce substrate support 1512 to adjust reaction zone 1564 volumes for depositing.The volume of reaction zone 1564 is less, needs the deposition gas scale of construction or the purified gas scale of construction of inflow treatment chamber 1500 fewer.Because gas usage reduces, thus can improve treatment chamber 1500 production capacities and reduce waste, and then cut operating costs.
As shown in Figure 15 A-15C, chamber cap assembly 1532 comprises cover cap 1572 and cover plate 1570, and wherein cover cap 1572 and cover plate 1570 form gas distribution road 1534.In one embodiment, as shown in Figure 15 A-15C, treatment chamber 1500 comprises the cover cap 1572 with gas joint ring 1568a, 1568b and slit 1569a, 1569b.In another embodiment, as shown in Figure 12 A-14C, treatment chamber 1500 comprises cover cap, gas joint ring and slit.Add-in card (not shown) maybe can be placed between cover plate 1570 and cover cap 1572.Add-in card is used for adjusting the spacing of (for example strengthening) cover cap 1572 and cover plate 1570, can change thus the gas being arranged in cover cap 1572 and cover plate 1570 and distribute road 1534 length.In another embodiment, the add-in card that selectivity is placed between cover plate 1570 and cover cap 1572 contains stainless steel.In other embodiments, gas distributes road 1534 to be made up of single-material.
Depending on gas to be conveyed, chamber cap assembly 1532 can comprise cooling module and/or heating unit.The temperature of watch-keeping cubicle cap assemblies 1532 can avoid gas on chamber cap assembly 1532, to decompose, deposit or condensation.For example, water channel (as the cooling duct 1290 of Figure 12 A) can be located in chamber cap assembly 1532, in order to cooling room cap assemblies 1532.In another example, heating unit (not shown) can be embedded or around the part of chamber cap assembly 1532, in order to heating chamber cap assemblies 1532.In one embodiment, can heat respectively or the part of cooling room cap assemblies 1532.For example, with reference to Figure 15 A, chamber cap assembly 1532 comprises cover plate 1570 and cover cap 1572, and its cover plate 1570 and cover cap 1572 form gas and distribute road 1534.Cover cap 1572 remains in a temperature range, and 1570 of cover plates remain in another temperature range.For example, be wound around or use other heating unit heating cover cap 1572 can prevent reactant gases condensation with heating zone, and cover plate 1570 maintains and is peripheral part temperature.In another example, can heat cover cap 1572 and utilize water channel cooling cover plate 1570, in order to avoid reactant gases carries out thermolysis on cover plate 1570.
The part that chamber cap assembly 1532 comprises can be made up of the aluminium of stainless steel, aluminium, nickel plating, nickel, their alloy or other applicable material.In one embodiment, cover cap 1572 and cover plate 1570 are manufacture separately, mechanical workout, forging, or they can be made up of metal, for example aluminium, aluminium alloy, steel, stainless steel, their alloy or their combination.
In one embodiment, gas distributes inner face 1531 (comprising the inner face of cover plate 1570 and cover cap 1572) and the lower surface 1560 of chamber cap assembly 1532 in road 1534 to comprise polishing minute surface, distributes the lower surface 1560 of road 1534 and chamber cap assembly 1532 to form laminar flow with assist gas along gas.In another embodiment, the inner face of gas duct 1550a, 1550b can be through electropolishing, to help the gas that forms Laminar Flow.
In another embodiment, gas distributes the inner face 1531 (comprising the inner face of cover plate 1570 and cover cap 1572) in road 1534 and the lower surface 1560 of chamber cap assembly 1532 to comprise the surface that uneven surface or mechanical treatment are crossed, to increase the surface-area on whole surface.Uneven surface more easily sticks together at inner face 1531 and lower surface 1560 material that gathers of not wishing to get.The rete that the normal generation of gas-phase deposition is not wished to get, and may peel off and pollute substrate 1510 from inner face 1531 and lower surface 1560.In one embodiment, the mean roughness (R of lower surface 1560 and/or inner face 1531
a) be at least approximately 10 μ in, be for example that (m) to approximately 200 μ in, (approximately 5.08 μ m) for approximately 0.254 μ for approximately 10 μ in, preferably (m) to approximately 100 μ in, (m), more preferably from about (m) to approximately 80 μ in, (approximately 2.032 μ m) for approximately 0.762 μ for 30 μ in for approximately 2.54 μ for approximately 0.508 μ for approximately 20 μ in.In another embodiment, the mean roughness of lower surface 1560 and/or inner face 1531 be at least approximately 100 μ in (approximately 2.54 μ m), preferably between approximately 200 μ in (approximately 5.08 μ m)～approximately 500 μ in (approximately 12.7 μ m).
The control unit 1580 such as such as programmable Personal Computer, workstation computer that Figure 15 A illustrates is for coupling treatment chamber 1500, in order to control processing condition.For example, in the different steps of substrate processing program, control unit 1580 is used for controlling and flows through valve 1542a, 1542b from process gas and the Purge gas of each gas source 1538,1539,1540.For instance, control unit 1580 comprises central processing unit (CPU) 1582, supports circuit 1584 and have the internal memory 1586 of relevant control software 1583.
Control unit 1580 can be the general-purpose computer processor of arbitrary type, and described control unit 1580 can be used for industry setting and controls various chambers and sub-processor.CPU 1582 can use arbitrary applicable internal memory 1586, for example random access memory, read-only storage, floppy disk, hard disk or other near-end or long-range digital storage.Various support circuit can connect CPU 1582, in order to support treatment chamber 1500.Control unit 1580 can be connected to the controller of another contiguous independent chamber part, programmable logic controller 1548a, the 1548b of for example valve 1542a, 1542b.Seeing through many signal wires (be referred to as below signal bus 1588, part be plotted in Figure 15 A) can operation control unit 1580 and the two-way communication of other assembly for the treatment of chamber 1500.Except controlling the process gas of gas source 1538,1539,1540 and programmable logic controller 1548a, the 1548b of Purge gas and valve 1542a, 1542b, control unit 1580 is also responsible for automatically controlling the action of other processing wafer, for example transmit wafer, control temperature, emptying chamber etc., described control section will be illustrated in this elsewhere.
With reference to Figure 15 A-15C, when running, mechanism (not shown) is sent to treatment chamber 1500 via slit valve 1508 by substrate 1510.Lifter pin 1520 pulls together substrate 1510 to be put on substrate support 1512 with mechanism.Substrate support 1512 lifts substrate 1510 and makes the lower surface 1560 of substrate 1510 near chamber cap assembly 1532.Together or individually (being pulse supply) utilized valve 1542a to inject the first air-flow to the gas for the treatment of chamber 1500 to distribute road 1534 and utilize valve 1542b to inject the second air-flow to treatment chamber 1500.The first air-flow can comprise from the Purge gas without interruption of purge gas source 1540 with from the reactant gases of the pulse supply of reacting gas source 1538, maybe can comprise from the reactant gases of the pulse supply of reacting gas source 1538 with from the Purge gas of the pulse supply of purge gas source 1540.The second air-flow can comprise from the Purge gas without interruption of purge gas source 1540 with from the reactant gases of the pulse supply of reacting gas source 1539, maybe can comprise from the reactant gases of the pulse supply of reacting gas source 1539 with from the Purge gas of the pulse supply of purge gas source 1540.
Annular steam 1574 distributes road 1534 with the eddying flow mode gas of passing through, and uses sweep gas and distributes the whole inner face in road 1534.Annular steam 1574 dissipates and flows downwards towards substrate 1510 surfaces.In the time that gas gas coming through distributes road 1534, gas velocity can slow down.Air-flow is followed the surface of flowing through substrate 1510 and the lower surface 1560 of chamber cap assembly 1532.The downward-sloping lower surface 1560 of chamber cap assembly 1532 contributes to reduce air-flow and crosses the speed difference on substrate 1510 surfaces.Air-flow then flows through choker 1562 and enters the suction district 1566 for the treatment of chamber 1500.Excess air, by product etc. will flow into suction road 1579, then be discharged outside treatment chamber 1500 by vacuum system 1578.In one aspect, air-flow distributes between road 1534 and substrate 1510 surfaces and chamber cap assembly 1532 lower surfaces 1560 with the layer flow mode gas of passing through, and so can make the surperficial of reactant gases uniform contact substrate 1510 and effectively remove the inner face of chamber cap assembly 1532.
The treatment chamber 1500 of Figure 15 A-15C has multinomial feature.In one aspect, the 1564 volume ratio traditional C VD chambers, reaction zone that treatment chamber 1500 provides are little.The reactant gases that 1500 need for the treatment of chamber are less or Purge gas are filled the reaction zone 1564 of carrying out special process.In another aspect, the chamber cap assembly 1532 that treatment chamber 1500 provides has downward-sloping or is funnelform lower surface 1560, so can reduce the air-flow speed difference of chamber cap assembly 1532 bottom surfaces to substrate 1510 of passing through.In aspect another, the speed that air flow stream is passed through can slow down in the gas distribution road 1534 that treatment chamber 1500 provides.More on the one hand in, the gas duct that treatment chamber 1500 provides presss from both sides an angle [alpha] with the center in gas distribution road 1534.Treatment chamber 1500 is the tool further feature described in elsewhere herein also.Other chamber embodiment for ald comprises one or more above-mentioned feature.
Expand cap style cap assemblies
In another embodiment, Figure 16 A-16E illustrates to have and expands cover cap and the schematic diagram for the chamber cap assembly 1632 of ALD technique.Figure 17 A-17D illustrates the basis schematic diagram of the treatment chamber 1700 of an embodiment again, and described treatment chamber 1700 comprises expansion cover cap 1772 and the gas delivery system 1730 for ALD technique.
In one embodiment, as shown in Figure 16 A, chamber cap assembly 1632 comprises the cover cap 1672 of being located at cover plate 1670 middle portions.One end of gas duct 1650a couples and is communicated with cover cap 1672 fluids, and the other end of gas duct 1650a runs through cover plate 1670 and couples and be communicated with ALD valve and chemical precursor source fluid.In one embodiment, gas duct 1650a is for directly coupling and distributing road 1628 fluids to be communicated with gas.Or gas duct 1650a can indirectly couple and distribute road 1628 fluids to be communicated with gas.
Gas duct cover 1652 comprises at least one gas duct, maybe can comprise two, three or more gas duct.The gas duct that Figure 16 B-16D illustrates overlaps 1652 air inclusion conduit 1650b, 1650c.In one embodiment, one end of gas duct 1650b couples and is communicated with cover cap 1672 fluids, and the other end of gas duct 1650b runs through cover plate 1670 and couples and be communicated with ALD valve and chemical precursor source fluid.In another embodiment, gas duct 1650b or 1650c are for directly coupling and distributing road 1628 fluids to be communicated with gas.Or gas duct 1650b or 1650c can indirectly couple and distribute road 1628 fluids to be communicated with gas.
In some embodiments, gas duct 1650c is available.One end of gas duct 1650c couples and is communicated with cover cap 1672 fluids, the other end of gas duct 1650b extends through cover plate 1670 and couples and be communicated with ALD valve and gas source fluid, for example carrier gas source, purge gas source, plasma gas source or chemical precursor source.In another embodiment, gas duct 1650c couples and is communicated with the upper surface fluid of cover cap 1672.In another embodiment, gas duct 1650c for example sees through breeches joint and links conduit 1650b, and couples and be communicated with gas passage 1668b fluid.
The chamber cap assembly 1632 of Figure 16 D-16E comprises cover cap 1672 and 1670, and wherein cover cap 1672 and cover plate 1670 form gas distribution road 1628.Add-in card (not shown) maybe can be placed between cover plate 1670 and cover cap 1672.Pin 1676 in groove 1674 connects cover plate 1670 and cover cap 1672 (Figure 16 D).Add-in card is used for adjusting the spacing of (for example strengthening) cover cap 1672 and cover plate 1670, can change thus the gas being arranged in cover cap 1672 and cover plate 1670 and distribute road 1628 length.In another embodiment, the add-in card that selectivity is placed between cover plate 1670 and cover cap 1672 contains stainless steel.In other embodiments, gas distributes road 1628 to be made up of single-material.
Depending on gas to be conveyed, chamber cap assembly 1632 can comprise cooling module and/or heating unit.The temperature of watch-keeping cubicle cap assemblies 1632 can avoid gas on chamber cap assembly 1632, to decompose, deposit or condensation.For example, cooling duct 1690 can be located in chamber cap assembly 1632, in order to cooling room cap assemblies 1632.In another embodiment, heating unit (not shown) can be embedded or around the part of chamber cap assembly 1632, in order to heating chamber cap assemblies 1632.
In one embodiment, can heat respectively or the part of cooling room cap assemblies 1632.For example, with reference to Figure 16 D-16E, chamber cap assembly 1632 comprises cover plate 1670 and cover cap 1672, and its cover plate 1670 and cover cap 1672 form gas and distribute road 1628.Cover cap 1672 remains in a temperature range, and 1670 of cover plates remain in another temperature range.For example, be wound around or use other heating unit heating cover cap 1672 can prevent reactant gases condensation with heating zone, and cover plate 1670 maintains envrionment temperature.In another embodiment, can heat cover cap 1672 and utilize water channel cooling cover plate 1670, in order to avoid reactant gases carries out thermolysis on cover plate 1670.
The part that chamber cap assembly 1632 comprises can be made up of the aluminium of stainless steel, aluminium, nickel plating, nickel or other applicable material.In one embodiment, cover cap 1672 and cover plate 1670 are manufacture separately, mechanical workout, forging, or they can be made up of metal, for example aluminium, aluminium alloy, steel, stainless steel, their alloy or their combination.
In an alternative embodiment, gas distributes inner face 1631 (comprising the inner face of cover plate 1670 and cover cap 1672) and the lower surface 1660 of chamber cap assembly 1632 in road 1628 to comprise polishing minute surface, forms laminar flow with assist gas along the lower surface 1660 that expands passage 1634 and chamber cap assembly 1632.In another embodiment, the inner face of gas duct 1650a, 1650b can be through electropolishing, to help the gas that forms Laminar Flow.
In another embodiment, gas distributes the inner face 1631 (comprising the inner face of cover plate 1670 and cover cap 1672) in road 1628 and the lower surface 1660 of chamber cap assembly 1632 to comprise the surface that uneven surface or mechanical treatment are crossed, to increase the surface-area on whole surface.Uneven surface more easily sticks together at inner face 1631 and lower surface 1660 material that gathers of not wishing to get.The rete that the normal generation of gas-phase deposition is not wished to get, and may peel off and pollute substrate 1610 from inner face 1631 and lower surface 1660.In one embodiment, the mean roughness (Ra) of lower surface 1660 and/or inner face 1631 is at least approximately 10 μ in, be for example that (m) to approximately 200 μ in, (approximately 5.08 μ m) for approximately 0.254 μ for approximately 10 μ in, preferably (m) to approximately 100 μ in, (m), more preferably from about (m) to approximately 80 μ in, (approximately 2.032 μ m) for approximately 0.762 μ for 30 μ in for approximately 2.54 μ for approximately 0.508 μ for approximately 20 μ in.In another embodiment, the mean roughness of lower surface 1660 and/or inner face 1631 be at least approximately 100 μ in (approximately 2.54 μ m), preferably between approximately 200 μ in (approximately 5.08 μ m)～approximately 500 μ in (approximately 12.7 μ m).
Figure 16 D-16E illustrates the cross section of chamber cap assembly 1632, and described chamber cap assembly 1632 comprises the gas distribution road 1628 that extends through cover plate 1670 middle portions.Gas distributes the bearing of trend in road 1628 to be generally the substrate that is positioned at chamber cap assembly 1632 belows during vertical ALD technique.Gas distributes road 1628 to extend through cover plate 1670 and support lower surface 1660 along the central shaft 1633 of cover cap 1672.Gas distributes road 1628 more to extend across lower surface 1660 and enter reaction zone 1064.Lower surface 1660 distributes road 1628 to extend to choker 1662 from gas.Lower surface 1660 is through configuration and adjust size to be positioned at the substrate of chamber cap assembly 1632 belows during substantially covering ALD technique.
The chamber cap assembly 1632 of Figure 16 A-16E can make substrate contact at least two gas sources or chemical precursor.In other embodiments, reconfigurable substrate contact pure gas source (as shown in Figure 5) or contact three or more gas sources or the chemical precursor (as shown in Figure 6) of making of chamber cap assembly 1632.
In Figure 16 E, in the time that the process gas of air-flow 1620 is advanced along central shaft 1633 ringwise, annular steam 1620 distributes the central shaft 1633 in road 1628 to expand being forced to around gas.Annular steam 1620 can comprise flow pattern, for example eddy current pattern, spiral pattern, the pattern that spirals, swirl patterns, distorting pattern, coiling pattern, swirl pattern or their derivative pattern.Annular steam 1620 distributes the central shaft 1633 in road 1628 to expand at least about 1 circle around gas, preferably at least about 1.5 circles, more preferably at least about 2 circles, more preferably at least about 3 circles, again more preferably at least about 4 circles or more.
In one embodiment, Figure 16 A-16E illustrates and distributes the central shaft 1633 in road 1628 to be arranged to unspecified angle relation gas duct 1650a, 1650b, 1650c and gas passage 1668a, 1668b and gas.Gas duct 1650a, 1650b, 1650c and/or gas passage 1668a, 1668b flow through gas inlet 1638a, 1638b for process gas and enter gas distribution road 1628.Gas duct 1650a, 1650b or 1650c or gas passage 1668a or 1668b preferred vertical central shaft 1633 (wherein+β ,-β=90 °) or make each gas duct 1650a, 1650b or the medullary ray of 1650c or gas passage 1668a or 1668b and central shaft 1633 press from both sides one angle+β or-β (wherein as shown in the central shaft 1733 of Figure 17 C, 90 ° of 90 ° or 0 ° <-β < of 0 ° of <+β <).Gas duct 1650a, 1650b, 1650c and gas passage 1668a, 1668b can vertical center axis 1633 be horizontally disposed with or can downward-sloping+β angle or be inclined upwardly-β angle, make gas flow to gas from gas inlet 1638a, 1638b and distribute road 1628 walls, but not directly down flowing to substrate, this contributes to reduce the possibility of blowing off substrate surface institute absorption reaction thing.
In addition, gas duct 1650a, 1650b, 1650c and gas passage 1668a, 1668b can increase toward the diameter of gas inlet 1638a, 1638b gradually from line of pipes or ALD valve, distribute the front gas velocity that first slows down in road 1628 to help enter gas at gas.For example, the internal diameter of gas duct 1650a, 1650b, 1650c and gas passage 1668a, 1668b can increase gradually, or described gas duct can comprise the cumulative connected conduit of multiple internal diameters.
In one embodiment, it is that essence remains unchanged from top 1637 along central shaft 1633 toward the internal diameter of point 1636 that the gas that Figure 16 D-16E illustrates distributes road 1628.In another embodiment, gas distribute road 1628 from top 1637 internal diameter along central shaft 1633 toward point 1636 for increasing gradually or phasing down (not shown).But gas distributes the internal diameter in road 1628 from putting 1636 along central shaft 1633 toward increasing gradually in abutting connection with the bottom 1635 of chamber cap assembly 1632 lower surfaces 1660.
In one example, can there is following diameter for the treatment of the chamber cap assembly 1632 of the substrate of diameter 300mm.It is approximately 0.5 inch to approximately 2 inches at the diameter on top 1637 that gas distributes road 1628, preferably approximately 0.75 inch to approximately 1.5 inches, and more preferably from about 0.8 inch to approximately 1.2 inches, for example approximately 1 inch.It is approximately 0.5 inch to approximately 2 inches at the diameter of point 1636 that gas distributes road 1628, preferably approximately 0.75 inch to approximately 1.5 inches, and more preferably from about 0.8 inch to approximately 1.2 inches, for example approximately 1 inch.It is approximately 1 inch to approximately 4 inches at the diameter of bottom 1635 that gas distributes road 1628, preferably approximately 1.5 inches to approximately 3 inches, and more preferably from about 1.6 inches to approximately 2.4 inches, for example approximately 2 inches.
Above-mentioned size is applicable to supply the gas distribution road 1628 of about 500sccm to the gas flow of about 3000sccm conventionally.In other specific implementations, variable-size is for specific gas traffic flow mistake.Generally speaking, gas flow is larger, and gas distributes the required diameter dimension in road 1628 larger.
Believe that tapered gas distributes road 1628 can make the less adiabatic expansion of γ-ray emission.Therefore there are more heat and gaseous interchange, therefore by controlling peripheral part temperature (being the temperature of watch-keeping cubicle cap assemblies 1632) gas temperature more easy to control of gas.Gas distributes road 1628 to be tapered, and can comprise one or more taper inner face, for example tapered plane, concave surface, convex surface or their combination, or can comprise the segment (i.e. a part be not taper for taper, a part) of one or more taper inner face.
In one embodiment, as shown in Figure 16 E, the contiguous gas of gas inlet 1638a, 1638b distributes the top 1637 in road 1628.In other embodiments, one or more gas inlet 1638a, 1638b are located in the top 1637 in gas distribution road 1628.
The medullary ray of gas duct 1650a, 1650b, 1650c and gas passage 1668a, 1668b distributes respectively spoke footpath wire clamp one angle [alpha] in road 1628 with gas, this similar Figure 17 B-C, wherein medullary ray 1776a, the 1776b of gas duct 1750a, 1750b respectively with spoke footpath wire clamp one angle [alpha] of distributing 1734 centers by gas.The entrance that gas enters gas duct 1650a, 1650b, 1650c and gas passage 1668a, 1668b preferably with inclination alpha (, 0 ° of α >) arrange, gas is flowed according to the circumferential direction of annular steam 1620 (Figure 16 E) indication.With inclination alpha supply gas directly flow to expand channel wall (, α=0 °) contribute to form laminar flow but not turbulent flow distribute 1628 by gas.Believe that laminar flow distributes 1628 to be conducive to remove the gas distribution inner face in road 1628 and other surface of chamber cap assembly 1632 by gas.In comparison, turbulent flow can not flow through inner face and other surface that gas distributes road 1628 equably, and may contain the dead angle that air-flow cannot arrive at.In one aspect, gas duct 1650a, 1650b, 1650c and gas passage 1668a, 1668b and corresponding gas inlet 1638a, 1638b each interval separate, and with same circumferential direction (being clockwise or inverse clock) guiding air-flow.
The phase is not limited to theory, and Figure 16 E is the sectional view that the gas of chamber cap assembly 1632 distributes road 1628, shows gas gas coming through and distributes in road 1628.Distribute 1628 flow pattern by gas although can not know for sure, believe annular steam 1620 can adopt annularly flow pattern and flow through gas and distribute road 1628, described annularly flow pattern for example eddying flow, helicoidal flow, spiral that mobile, mobile, the fast eddy flow that turns round and round is moving, distortion is flowed, reel flow, tortuously flow, curlingly flow, swirl flow, they derivative flowed or their combination is flowed.Annularly flow is formed at " treatment zone " but not the space that separates with substrate.In one aspect, because of the whole inner face in eddying flow pattern sweep gas distribution road 1628, therefore annular steam 1620 contributes to more effectively vent gas to distribute road 1628.
Figure 16 C-16E illustrates that chamber cap assembly 1632 lower surfaces 1660 of at least a portion distribute road 1628 to be tapered toward chamber cap assembly 1632 peripheral part from gas, and the favor speed waveform that provides gas to distribute 1628 flowing through substrate surfaces, road (from substrate center to substrate perimeter) from gas is provided.Lower surface 1660 can comprise one or more conical surface, for example plane, concave surface, convex surface or their combination.In one embodiment, lower surface 1660 is tapered funnel-form.
In one embodiment, lower surface 1660 is downward-sloping passes through chamber cap assembly 1632 lower surfaces 1660 to the speed difference of substrate to reduce air-flow, and then makes substrate surface uniform contact reactant gases.In one embodiment, the flow section between lower surface 1660 and substrate surface that chamber cap assembly 1632 is downward-sloping, the maximum area in described cross section and the ratio of minimum area are approximately less than 2, are preferably less than approximately 1.5, are more preferably less than approximately 1.3, and are more preferably 1.
The phase is not limited to theory, believes that air-flow crosses substrate surface with the speed of homogeneous more and can make gas be deposited on more equably on substrate.Believe that gas velocity is proportional to gas concentration, be therefore proportional to gas aggradation in the speed of substrate surface.Therefore the first substrate surface area is with respect to the second substrate surface area faster for gas velocity, there is gas aggradation speed faster in first surface region.The chamber cap assembly 1632 of believing the downward-sloping lower surface 1660 of tool can supplied gas be deposited on whole substrate surface more equably, and this is because lower surface 1660 has produced the more speed of homogeneous, therefore that gas spreads all over the concentration of substrate surface is more even.
Figure 16 C-16E illustrates and is positioned at the choker 1662 of placing chamber cap assembly 1632 peripheral part of the periphery at substrate place during contiguous ALD technique.In the time that chamber cap assembly 1632 assembles to form treatment zone in substrate surrounding, choker 1662 comprises arbitrary restriction gas stream crosses the element of substrate perimeter near zone.
As shown in Figure 16 B-16D, the chamber cap cover 1680 with handle 1682 can cover cover plate 1670 upper surfaces of cover cap 1672, gas duct 1650a, gas duct cover 1652 and a part.The temperature of chamber cap assembly 1632 can be by liquid-cooling system control, and described liquid-cooling system connects water jacket, for example, extend through the cooling duct 1690 of cover plate 1670.Such as the cooling fluid flow overcooling road 1690 of water and remove the heat of cover plate 1670.Refrigerant connecting piece 1692a, 1692b are connected to cooling duct 1690 by flexible pipe or pipe.The other end of refrigerant connecting piece 1692a, 1692b is connected to fluid source and fluid recovery device by flexible pipe or pipe, the cooling system of for example, establishing in or independently cooling system.Refrigerant connecting piece 1692a, 1692b are connected to cover plate 1670 by bracing frame 1694.The liquid that flows through cooling duct 1690 can comprise water, oil, ethanol, ethylene glycol, glycol ether or other organic solvent.In one embodiment, the temperature of cover plate 1670 or chamber cap assembly 1632 can maintain between approximately 0 DEG C to approximately 100 DEG C, preferably between approximately 18 DEG C to approximately 65 DEG C, more preferably from about between 20 DEG C to approximately 50 DEG C.
Figure 17 A-17D illustrates the schematic diagram of an embodiment for the treatment of chamber 1700, and described treatment chamber 1700 comprises the gas delivery system 1730 for ALD technique.The chamber body 1702 that treatment chamber 1700 comprises tool sidewall 1704 and bottom 1706.The slit valve 1708 for the treatment of chamber 1700 can be for mechanism (not shown) turnover treatment chamber 1700 for example, to transmit and to fetch substrate 1710, the semiconductor wafer of 200mm or 300mm or glass substrate.
Substrate support 1712 supports the substrate 1710 on substrate continuing surface 1711 in treatment chamber 1700.Substrate support 1712 is provided with up and-down motor 1714, in order to improve and to reduce substrate support 1712 and to be placed on the substrate 1710 on substrate support 1712.The lifter plate 1716 that connects up and-down motor 1718 is located in treatment chamber 1700, in order to improve and to reduce the removable lifter pin 1720 through substrate support 1712.Lifter pin 1720 improves and reduces the lip-deep substrate 1710 of substrate support 1712.Substrate support 1712 can comprise vacuum suction seat (not shown), electrostatic chuck (not shown) or pincers ring (not shown), with the substrate 1710 on stationary substrate strut member 1712 during depositing operation.
Substrate 1710 temperature that are placed on it by adjusting the temperature control of substrate support 1712.For example, can be embedded type heating unit with such as resistance heater (not shown) etc. and carry out heated substrate strut member 1712, or can be with heating such as being located at the radiant heat such as the heating lamp (not shown) of substrate support 1712 tops.Purify ring 1722 and can be placed on substrate support 1712, provide Purge gas to substrate 1710 peripheral part to limit purification channel 1724, in order to avoid settling is deposited on substrate 1710.
Gas delivery system 1730 is located at the top of chamber body 1702, for example, in order to supply with treatment chamber 1700 gases, process gas and/or Purge gas.The gas delivery system 1730 of Figure 17 A-17D can make substrate 1710 contact at least two gas sources or chemical precursor.In other example, the reconfigurable substrate 1710 that makes of gas delivery system 1730 contacts pure gas source (as shown in Figure 5) or contact three or more gas sources or chemical precursor (as shown in Figure 6).Vacuum system 1778 connects suction road 1779, and so that arbitrary predetermined gas is discharged outside treatment chamber 1700, and the suction district 1766 of assist process chamber 1700 maintains the pressure that is expectation or the pressure range that remains on expectation.
In one embodiment, gas delivery system 1730 comprises chamber cap assembly 1732, and the gas that gas delivery system 1730 tools extend through the middle portion of chamber cap assembly 1732 distributes road 1734.Cover cap 1772 air inclusions distribute the column part in road 1734, for example thin narrow portion 1754.Cover cap 1772 is gone back shunting or the expansion section s that air inclusion distributes road 1734, for example expanding unit 1756.Gas distributes road 1734 to distribute the central shaft 1733 in road 1734 to extend through cover plate 1770 from substrate continuing surface 1711 along gas and supports lower surface 1760.In one example, portion gas distributes road 1734 to be in fact still cylindric along the central shaft 1733 in top 1737, and the central shaft 1733 that portion gas distributes 1734, road to deviate from bottom 1735 is tapered.Gas distributes road 1734 more to extend across lower surface 1760 and enter reaction zone 1764.Lower surface 1760 distributes the bottom 1735 in road 1734 to extend to choker 1762 from gas.Lower surface 1760 is through configuration and adjust size to be located substantially on the substrate 1710 on the substrate continuing surface 1711 of substrate support 1712.
In the time that the process gas of air-flow 1774 is advanced along central shaft 1733 ringwise, annular steam 1774 distributes the central shaft 1733 in road 1734 to expand being forced to around gas.Annular steam 1774 can comprise flow pattern, for example eddy current pattern, spiral pattern, the pattern that spirals, swirl patterns, distorting pattern, coiling pattern, swirl pattern or their derivative pattern.Annular steam 1774 distributes the central shaft 1733 in road 1734 to expand at least about 1 circle around gas, preferably at least about 1.5 circles, and more preferably at least about 2 circles, more preferably at least about 3 circles, and more preferably at least about 4 circles or more.
Gas distributes road 1734 to have gas inlet 1736a, 1736b, and in order to the air-flow from two groups of similar valve 1742a/1752a, 1742b/1752b to be provided, described gas inlet can provide together or individually.In a structure, valve 1742a and valve 1742b couple different reacting gas sources, but preferably couple same purge gas source.For example, valve 1742a couples reacting gas source 1738, and valve 1742b couples reacting gas source 1739, and two valve 1742a, 1742b all couple purge gas source 1740.Valve 1742a, 1742b comprise line of pipes 1743a, the 1743b of tool valve component 1744a, 1744b separately, and valve 1752a, 1752b comprise purge lines 1745a, the 1745b of tool valve component 1746a, 1746b separately.Line of pipes 1743a, 1743b are communicated with reacting gas source 1738,1739 fluids, and distribute gas inlet 1736a, the 1736b fluid in road 1734 to be communicated with gas.Valve component 1744a, the 1744b of line of pipes 1743a, 1743b controls reactant gases and flows to gas distribution road 1734 from reacting gas source 1738,1739.Purge lines 1745a, 1745b with purge gas source 1740 for fluid is communicated with, and crossing with line of pipes 1743a, the 1743b of the valve component 1744a of line of pipes 1743a, 1743b, 1744b downstream part.Valve component 1746a, the 1746b of purge lines 1745a, 1745b controls Purge gas and flows to gas distribution road 1734 from purge gas source 1740.For example, if carrier gas is used for the reactant gases of transport of reactant gases body source 1738,1739, preferably identical (, using argon gas as carrier gas and Purge gas) of carrier gas and Purge gas.
Valve component 1744a, 1744b, 1746a, 1746b respectively can comprise dividing plate (not shown) and valve seat (not shown).Apply bias voltage or driven and can open or close dividing plate.Dividing plate can be pneumatic type or electrodynamictype.Pneumavalve comprises can be purchased from the pneumavalve of the Veriflo branch of Fujikin company and Parker Han Ni Fen company (Park Hannifin Corp.).Motorized valve comprises can be purchased from the motorized valve of Fujikin company.For example, ALD valve can adopt Fujikin model FPR-UDDFAT-21-6.35-PI-ASN or Fujikin model FPR-NHDT-21-6.35-PA-AYT.Programmable logic controller 1748a, 1748b couple valve 1742a, 1742b, in order to control valve component 1744a, the 1744b of starting valve 1742a, 1742b, the dividing plate of 1746a, 1746b.The gas pulses cycle that pneumavalve produces can be low to moderate approximately 0.020 second.The gas pulses cycle that motorized valve produces can be low to moderate approximately 0.005 second.Motorized valve generally need use the driving mechanism of contact valve and programmable logic controller.
Valve 1742a, 1742b can be respectively zero dead volume valve, and described valve can, in the time that valve component 1744a, 1744b close, rinse the reactant gases of line of pipes 1743a, 1743b.For example, purge lines 1745a, 1745b can arrange valve component 1744a, the 1744b in abutting connection with line of pipes 1743a, 1743b.In the time that valve component 1744a, 1744b close, purge lines 1745a, 1745b can supply Purge gas and rinse line of pipes 1743a, 1743b.In one embodiment, purge lines 1745a, 1745b are slightly separated by with valve component 1744a, the 1744b of line of pipes 1743a, 1743b, and so Purge gas is opened Shi Buhui in valve component 1744a, 1744b and directly sent into valve component 1744a, 1744b.Refer to that at this zero dead volume valve valve has insignificant dead volume (be dead volume differ be decided to be zero).
Each group valve 1742a/1752a, 1742b/1752b can be used to provide combination air-flow and/or indivedual air-flow of reactant gases and Purge gas.With reference to valve 1742a/1752a, the combination air-flow example of reactant gases and Purge gas comprises from the continuous purification gas stream of purge gas source 1740 and the purge lines 1745a that flows through with from the reactant gases pulse of reacting gas source 1738 and the line of pipes 1743a that flows through.By opening the dividing plate of valve component 1746a of purge lines 1745a, can Purge gas without interruption.By opening and close the dividing plate of valve component 1744a of line of pipes 1743a, reactant gases that can pulse supply reacting gas source 1738.With reference to valve 1742a/1752a, indivedual air-flow examples of reactant gases and Purge gas comprise from the Purge gas pulse of purge gas source 1740 and the purge lines 1745a that flows through with from the reactant gases pulse of reacting gas source 1738 and the line of pipes 1743a that flows through.By opening and close the dividing plate of valve component 1746a of purge lines 1745a, can pulse supply Purge gas.By opening and close the dividing plate of valve component 1744a of line of pipes 1743a, reactant gases that can pulse supply reacting gas source 1738.
Line of pipes 1743a, the 1743b of valve 1742a, 1742b can be connected to gas inlet 1736a, 1736b via gas duct 1750a, 1750b.Gas duct 1750a, 1750b can be integral component or the separation assembly of valve 1742a, 1742b.In one aspect, valve 1742a, 1742b next-door neighbour gas distributes road 1734, so can reduce line of pipes 1743a, 1743b and gas duct 1750a, 1750b unnecessary configuration volume between valve 1742a, 1742b and gas inlet 1736a, 1736b.
The phase is not limited to theory, believe that it is immobilize and distribute bottom 1735 increases in road 1734 allow to distribute by gas 1734 the less adiabatic expansion of γ-ray emission from specified point toward gas to specified point that gas distributes the diameter in road 1734 distributes road 1734 top 1737 along central shaft 1733 from gas, this contributes to control the process gas temperature in annular steam 1774.For example, entering gas via gas inlet 1736a, 1736b distributes the gas in road 1734 to produce suddenly adiabatic expansion will to cause gas temperature to decline, and cause gas to condense and form drop.On the other hand, believe that tapered gas distributes road 1734 can make the less adiabatic expansion of γ-ray emission.Therefore there are more heat and gaseous interchange, therefore by controlling peripheral part temperature (being the temperature of watch-keeping cubicle cap assemblies 1732) gas temperature more easy to control of gas.Gas distributes road 1734 to be tapered, and can comprise one or more taper inner face, for example tapered plane, concave surface, convex surface or their combination, or can comprise the segment (i.e. a part be not taper for taper, a part) of one or more taper inner face.
In one embodiment, the contiguous gas of gas inlet 1736a, 1736b distributes the top 1737 in road 1734.In other embodiments, one or more gas inlet 1736a, 1736b distribute the total length in road 1734 to be located between top 1737 and bottom 1735 along gas.
Medullary ray 1776a, 1776b that Figure 17 B illustrates gas duct 1750a, 1750b distribute the medullary ray 1733 in road 1734 to press from both sides an angle [alpha] with gas respectively.The entrance that gas enters gas duct 1750a, 1750b preferably arranges with inclination alpha (, 0 ° of α >), and gas is flowed according to the circumferential direction of annular steam 1774 indications.With inclination alpha supply gas directly flow to expand channel wall (, α=0 °) contribute to form laminar flow but not turbulent flow distribute 1734 by gas.Believe that laminar flow distributes 1734 to be conducive to remove the gas distribution inner face in road 1734 and other surface of chamber cap assembly 1732 by gas.In comparison, turbulent flow can not flow through inner face and other surface that gas distributes road 1734 equably, and may contain the dead angle that air-flow cannot arrive at.In one aspect, gas duct 1750a, 1750b and corresponding gas inlet 1736a, 1736b each interval separate, and with same circumferential direction (being clockwise or inverse clock) guiding air-flow.
Figure 17 C illustrates 1733 one-tenth arbitrary relations of central shaft that gas duct 1750a, 1750b or gas inlet 1736a, 1736b can be arranged and distribute road 1734 with gas.Each person's preferred vertical central shaft 1733 (wherein+β ,-β=90 °) of gas duct 1750a, 1750b and gas inlet 1736a, 1736b or make medullary ray 1776a, the 1776b of each gas duct 1750a and 1750 and central shaft 1733 press from both sides one angle+β or-β (wherein 90 ° of 90 ° or 0 ° <-β < of 0 ° of <+β <).Therefore, gas duct 1750a, 1750b can vertical center axis 1733 be horizontally disposed with (as shown in Figure 17 C) or can downward-sloping+β angle or be inclined upwardly-β angle, make gas flow gas distribute road 1734 walls, but not directly down flowing to substrate 1710, this contributes to reduce the possibility of blowing off the surperficial institute of substrate 1710 absorption reaction thing.In addition, gas duct 1750a, 1750b can increase gradually from the diameter of line of pipes 1743a, the 1743b of valve 1743a, 1742b, distribute the front gas velocity that first slows down in road 1734 to help enter gas at gas.For example, the diameter of gas duct 1750a, 1750b can increase gradually, or described gas duct can comprise the cumulative connected conduit of multiple internal diameters.
The phase is not limited to theory, and Figure 17 C is the sectional view that the gas of chamber cap assembly 1732 distributes road 1734, shows gas gas coming through and distributes in road 1734.Distribute 1734 flow pattern by gas although can not know for sure, believe annular steam 1774 (Figure 17 C) can adopt annularly flow pattern and flow through gas and distribute road 1734, described annularly flow pattern for example eddying flow, helicoidal flow, spiral that mobile, mobile, the fast eddy flow that turns round and round is moving, distortion is flowed, reel flow, tortuously flow, curlingly flow, swirl flow, they derivative flowed or their combination is flowed.As shown in Figure 17 C, annularly flow is formed at " treatment zone " but not the space that separates with substrate 1710.In one aspect, because of the whole inner face in eddying flow pattern sweep gas distribution road 1734, therefore annular steam 1774 contributes to more effectively vent gas to distribute road 1734.
In one embodiment, Figure 17 C illustrates the surface distance 1775 from medullary ray 1776a, the 1776b of gas duct 1750a, 1750b to substrate 1710.Distance 1777 refers to from gas distributes the top 1737 in road 1734 to the lower surface 1773 of cover cap 1172.Flow when not expecting to spiral while crossing substrate 1710 surface, distance 1775,1777 is enough to allow annular steam 1774 dissipate and flow downwards.Believe that annular steam 1774 is to advance with layer flow mode, so can effectively remove the surface of chamber cap assembly 1732 and substrate 1710.In one embodiment, distance 1777 is approximately 4 inches to approximately 8 inches, preferably approximately 4.5 inches to approximately 7 inches, and more preferably from about 5 inches to approximately 6 inches, for example 5.5 inches.In another embodiment, the length that distance 1775 or gas distribute road 1734 to extend along central shaft 1733 is approximately 5 inches to approximately 12 inches, preferably approximately 6 inches to approximately 10 inches, and more preferably from about 7 inches to approximately 9 inches, for example approximately 8 inches.
Figure 17 A and 17C illustrate that chamber cap assembly 1732 lower surfaces 1760 of at least a portion distribute road 1734 to be tapered toward chamber cap assembly 1732 peripheral part from gas, and the favor speed waveform that provides gas to distribute 1734 flowing through substrate 1710 surfaces (from substrate center to substrate perimeter), road from gas is provided.Lower surface 1760 can comprise one or more conical surface, for example plane, concave surface, convex surface or their combination.In one embodiment, lower surface 1760 is tapered funnel-form.
In one embodiment, lower surface 1760 is downward-sloping passes through chamber cap assembly 1732 lower surfaces 1760 to the speed difference of substrate 1710 to reduce air-flow, and then makes substrate 1710 surface uniform contact reacts gases.In one embodiment, flow section between the lower surface 1760 that chamber cap assembly 1732 is downward-sloping and substrate 1710 surfaces, the maximum area in described cross section and the ratio of minimum area are approximately less than 2, are preferably less than approximately 1.5, be more preferably less than approximately 1.3, and be more preferably 1.
The phase is not limited to theory, believes that air-flow crosses substrate 1710 surfaces with the speed of homogeneous more and can make gas be deposited on more equably on substrate 1710.Believe that gas velocity is proportional to gas concentration, be therefore proportional to gas aggradation in the speed on substrate 1710 surfaces.Therefore the first surface region of substrate 1710 overdraught speed is with respect to second surface region, there is gas aggradation speed faster in first surface region.The chamber cap assembly 1732 of believing the downward-sloping lower surface 1760 of tool can supplied gas be deposited on whole substrate 1710 surfaces more equably, and this is because lower surface 1760 has produced the more speed of homogeneous, therefore that gas spreads all over the concentration on substrate 1710 surfaces is more even.
Figure 17 A illustrates choker 1762, and described choker 1762 is positioned at chamber cap assembly 1732 peripheral part of adjacent substrate 1710 peripheries.In the time that 1732 assemblings of chamber cap assembly form treatment zone in substrate 1710 surrounding, the element that choker 1762 comprises arbitrary restriction gas flowing through substrate 1710 periphery near zones.
In a specific implementations, choker 1762 is approximately 0.04 inch to approximately 2.0 inches with the spacing of substrate support 1712, preferably approximately 0.04 inch to approximately 0.2 inch.Spacing can change according to delivering gas and deposition process conditions.Utilize choker 1762 to separate the pressure uneven distribution district of reaction zone 1764 and suction district 1766, can make the pressure distribution in volume or the reaction zone 1764 between chamber cap assembly 1732 and substrate 1710 more even.
With reference to Figure 17 A, in one aspect, because reaction zone 1764 and suction district 1766 have separated, therefore reactant gases or Purge gas only need appropriateness to fill reaction zone 1764, allow the abundant contact reacts gas of substrate 1710 or Purge gas.In traditional chemical vapour deposition, the chamber of prior art needs simultaneously and evenly supplies the extremely whole substrate surface of combination air-flow of reactant gases, to guarantee that reactant gases is equably in the surperficial interreaction of whole substrate 1710.In ald, treatment chamber 1700 is introduced reactant gases in succession to substrate 1710 surfaces, makes reactant interlaminate be adsorbed in substrate 1710 surfaces.Therefore ald does not need reactant gases to arrive at substrate 1710 surfaces simultaneously.Needing on the contrary to supply enough reactant gasess makes reactant thin layer be adsorbed in substrate 1710 surfaces.
Because the internal volume of the volume ratio traditional C VD chamber of reaction zone 1764 is little, therefore need less gas volume to fill the reaction zone 1764 of the special process that carries out ald program.For example, taking the chamber embodiment of substrate of processing diameter 200mm as example, the volume of reaction zone 1764 is about 1000cm
3or less, preferred about 500cm
3or less, more preferably from about 200cm
3or less.Taking the chamber embodiment of substrate of processing diameter 300mm as example, the volume of reaction zone 1764 is about 3000cm
3or less, preferred about 1500cm
3or less, more preferably from about 600cm
3or less.In one embodiment, can raise or reduce substrate support 1712 to adjust reaction zone 1764 volumes for depositing.The volume of reaction zone 1764 is less, needs the deposition gas scale of construction or the purified gas scale of construction of inflow treatment chamber 1700 fewer.Because gas usage reduces, thus can improve treatment chamber 1700 production capacities and reduce waste, and then cut operating costs.
As shown in Figure 17 A-17D, chamber cap assembly 1732 comprises cover cap 1772 and cover plate 1770, and wherein cover cap 1772 and cover plate 1770 form gas distribution road 1734.Add-in card (not shown) maybe can be placed between cover plate 1770 and cover cap 1772.Add-in card is used for adjusting the spacing of (for example strengthening) cover cap 1772 and cover plate 1770, can change thus the gas being arranged in cover cap 1772 and cover plate 1770 and distribute road 1734 length.In another embodiment, the add-in card that selectivity is placed between cover plate 1770 and cover cap 1772 contains stainless steel.In other embodiments, gas distributes road 1734 to be made up of single-material.
Depending on gas to be conveyed, chamber cap assembly 1732 can comprise cooling module and/or heating unit.The temperature of watch-keeping cubicle cap assemblies 1732 can avoid gas on chamber cap assembly 1732, to decompose, deposit or condensation.For example, water channel (as the cooling duct 1690 of Figure 16 A) can be located in chamber cap assembly 1732, in order to cooling room cap assemblies 1732.In another embodiment, heating unit (not shown) can be embedded or around the part of chamber cap assembly 1732, in order to heating chamber cap assemblies 1732.In one embodiment, can heat respectively or the part of cooling room cap assemblies 1732.For example, with reference to Figure 17 A, chamber cap assembly 1732 comprises cover plate 1770 and cover cap 1772, and its cover plate 1770 and cover cap 1772 form gas and distribute road 1734.Cover cap 1772 remains in a temperature range, and 1770 of cover plates remain in another temperature range.For example, be wound around or use other heating unit heating cover cap 1772 can prevent reactant gases condensation with heating zone, and cover plate 1770 maintains and is peripheral part temperature.In another embodiment, can heat cover cap 1772 and utilize water channel cooling cover plate 1770, in order to avoid reactant gases carries out thermolysis on cover plate 1770.
The part that chamber cap assembly 1732 comprises can be made up of the aluminium of stainless steel, aluminium, nickel plating, nickel, their alloy or other applicable material.In one embodiment, cover cap 1772 and cover plate 1770 are manufacture separately, mechanical workout, forging, or they can be made up of metal, for example aluminium, aluminium alloy, steel, stainless steel, their alloy or their combination.
The control unit 1780 such as such as programmable Personal Computer, workstation computer that Figure 17 A illustrates is for coupling treatment chamber 1700, in order to control processing condition.For example, in the different steps of substrate processing program, control unit 1780 is used for controlling and flows through valve 1742a, 1742b from process gas and the Purge gas of each gas source 1738,1739,1740.For instance, control unit 1780 comprises central processing unit (CPU) 1782, supports circuit 1784 and have the internal memory 1786 of relevant control software 1783.
Control unit 1780 can be the general-purpose computer processor of arbitrary type, and described control unit 1780 can be used for industry setting and controls various chambers and sub-processor.CPU 1782 can use arbitrary applicable internal memory 1786, for example random access memory, read-only storage, floppy disk, hard disk or other near-end or long-range digital storage.Various support circuit can connect CPU 1782, in order to support treatment chamber 1700.Control unit 1780 can be connected to the controller of another contiguous independent chamber part, programmable logic controller 1748a, the 1748b of for example valve 1742a, 1742b.Seeing through many signal wires (be referred to as below signal bus 1788, part be plotted in Figure 17 A) can operation control unit 1780 and the two-way communication of other assembly for the treatment of chamber 1700.Except controlling the process gas of gas source 1738,1739,1740 and programmable logic controller 1748a, the 1748b of Purge gas and valve 1742a, 1742b, control unit 1780 is also responsible for automatically controlling the action of other processing wafer, for example transmit wafer, control temperature, emptying chamber etc., described control section will be illustrated in this elsewhere.
With reference to Figure 17 A-17C, when running, mechanism (not shown) is sent to treatment chamber 1700 via slit valve 1708 by substrate 1710.Lifter pin 1720 pulls together substrate 1710 to be put on substrate support 1712 with mechanism.Substrate support 1712 lifts substrate 1710 and makes the lower surface 1760 of substrate 1710 near chamber cap assembly 1732.Utilizing together or individually valve 1742a to inject (being pulse supply) first air-flow to the gas for the treatment of chamber 1700 distributes road 1734 and utilizes valve 1742b to inject the second air-flow to treatment chamber 1700.The first air-flow can comprise from the Purge gas without interruption of purge gas source 1740 with from the reactant gases of the pulse supply of reacting gas source 1738, maybe can comprise from the reactant gases of the pulse supply of reacting gas source 1738 with from the Purge gas of purge gas source 1740 pulses supplies.The second air-flow can comprise from the Purge gas without interruption of purge gas source 1740 with from the reactant gases of the pulse supply of reacting gas source 1739, maybe can comprise from the reactant gases of the pulse supply of reacting gas source 1739 with from the Purge gas of the pulse supply of purge gas source 1740.Annular steam 1774 distributes road 1734 with the eddying flow mode gas of passing through, and uses sweep gas and distributes the whole inner face in road 1734.Annular steam 1774 dissipates and flows downwards towards substrate 1710 surfaces.In the time that gas gas coming through distributes road 1734, gas velocity can slow down.Air-flow is followed the surface of flowing through substrate 1710 and the lower surface 1760 of chamber cap assembly 1732.The downward-sloping lower surface 1760 of chamber cap assembly 1732 contributes to reduce air-flow and crosses the speed difference on substrate 1710 surfaces.Air-flow then flows through choker 1762 and enters the suction district 1766 for the treatment of chamber 1700.Excess air, by product etc. will flow into suction road 1779, then be discharged outside treatment chamber 1700 by vacuum system 1778.In one aspect, air-flow distributes between road 1734 and substrate 1710 surfaces and chamber cap assembly 1732 lower surfaces 1760 with the layer flow mode gas of passing through, and so can make the surperficial of reactant gases uniform contact substrate 1710 and effectively remove the inner face of chamber cap assembly 1732.
The treatment chamber 1700 of Figure 17 A-17D has multinomial feature.In one aspect, reaction zone 1764 volumes that treatment chamber 1700 provides are little compared to traditional C VD chamber.The reactant gases that 1700 need for the treatment of chamber are less or Purge gas are filled the reaction zone 1764 of carrying out special process.In another aspect, the chamber cap assembly 1732 that treatment chamber 1700 provides has downward-sloping or is funnelform lower surface 1760, so can reduce the air-flow speed difference of chamber cap assembly 1732 bottom surfaces to substrate 1710 of passing through.In aspect another, the speed that air flow stream is passed through can slow down in the gas distribution road 1734 that treatment chamber 1700 provides.More on the one hand in, the gas duct that treatment chamber 1700 provides presss from both sides an angle [alpha] with the center in gas distribution road 1734.Treatment chamber 1700 is still had a further feature.Other chamber embodiment for ald comprises one or more above-mentioned feature.
In some embodiments, gas in treatment chamber 1700 distributes road 1734 to have the surface that uneven surface or mechanical treatment are crossed, to increase the surface-area on whole surface.Uneven surface more easily sticks together at the inner face 1790 of cover cap 1772 and the lower surface 1760 of cover plate 1770 material that gathers of not wishing to get.The rete that the normal generation of gas-phase deposition is not wished to get, and may peel off and pollute substrate 1710 from inner face 1790 and lower surface 1760.
In another embodiment, as shown in Figure 17 D, the region R of multiple surfaces on the inner face 1790,1792 of cover cap 1772 and the lower surface 1760 of cover plate 1770
1to R
10between form uneven surface gradient.For example, the thin narrow portion 1754 of cover cap 1772 comprises inner face 1790, and is positioned at region R
1to R
2between.The expanding unit 1756 of cover cap 1772 comprises inner face 1792, and is positioned at region R
3to R
8between.Again, the bottom 1758 of cover plate 1770 comprises lower surface 1760, and is positioned at region R
9to R
10between.
In some embodiments, gas distributes the surfaceness in road 1734 to increase along central shaft 1733, for example, by R
1to R
10.In another embodiment, gas distributes the surfaceness in road 1734 to be extended and to be increased towards substrate continuing surface 1711 by gas inlet 1736a, 1736b along central shaft 1733.In another embodiment, gas distributes the average surface roughness in road 1734 to be increased to inner face 1792 by inner face 1790, is more further increased to lower surface 1760.In another embodiment, gas distributes the average surface roughness in road 1734 to be increased to bottom 1735 by top 1737.
In one embodiment, the thin narrow portion 1754 of cover cap 1772 comprises inner face 1790, the mean roughness (R of inner face 1790
a) (approximately 0.254 μ m) to be at least approximately 10 μ in, be for example that (m) to approximately 50 μ in, (approximately 1.27 μ m) for approximately 0.254 μ for approximately 10 μ in, preferably (m) to approximately 45 μ in, (m), more preferably from about (m) to approximately 40 μ in, (approximately 1.016 μ m) for approximately 0.762 μ for 30 μ in for approximately 1.143 μ for approximately 0.508 μ for approximately 20 μ in.The expanding unit 1756 of cover cap 1772 comprises inner face 1792, the mean roughness of inner face 1792 is at least approximately 35 μ in, and (approximately 0.89 μ m), be for example that (m) to approximately 70 μ in, (approximately 1.78 μ m) for approximately 0.89 μ for approximately 35 μ in, preferably (m) to approximately 65 μ in, (m), more preferably from about (m) to approximately 60 μ in, (approximately 1.52 μ m) for approximately 1.143 μ for 45 μ in for approximately 1.65 μ for approximately 1.016 μ for approximately 40 μ in.The bottom 1758 of cover plate 1770 comprises lower surface 1760, the mean roughness of lower surface 1760 is at least approximately 35 μ in, and (approximately 0.89 μ m), be for example that (m) to approximately 70 μ in, (approximately 1.78 μ m) for approximately 0.89 μ for approximately 35 μ in, preferably (m) to approximately 65 μ in, (m), more preferably from about (m) to approximately 60 μ in, (approximately 1.52 μ m) for approximately 1.143 μ for 45 μ in for approximately 1.65 μ for approximately 1.016 μ for approximately 40 μ in.
In one example, the thin narrow portion 1754 inclusion region R of cover cap 1772
1, region R
1the R of inner face 1790
afor approximately 32 μ in for example, to approximately 36 μ in, approximately 34 μ in, the R of the inner face 1790 of region R2
afor approximately 34 μ in for example, to approximately 42 μ in, approximately 38 μ in.The expanding unit 1756 inclusion region R of cover cap 1772
3, region R
3the R of inner face 1792
afor approximately 40 μ in for example, to approximately 50 μ in, approximately 45 μ in, region R
4the R of inner face 1790
afor approximately 44 μ in for example, to approximately 60 μ in, approximately 51 μ in, region R
5the R of inner face 1792
afor approximately 48 μ in for example, to approximately 68 μ in, approximately 58 μ in, region R
6the R of inner face 1790
afor approximately 46 μ in for example, to approximately 64 μ in, approximately 55 μ in, region R
7the R of inner face 1792
afor approximately 48 μ in for example, to approximately 68 μ in, approximately 57 μ in, the R of the inner face 1790 of region R8
afor approximately 48 μ in for example, to approximately 68 μ in, approximately 57 μ in.Again, the bottom 1758 inclusion region R of cover plate 1770
9, region R
9the R of lower surface 1760
afor approximately 46 μ in for example, to approximately 64 μ in, approximately 55 μ in, region R
10the R of lower surface 1760
abe that approximately 46 μ in for example, to approximately 64 μ in, approximately 55 μ in.
Figure 18 A-18H illustrates according to the cross section of the chamber cap cover cap for ALD technique of another embodiment.Gas conveying assembly 1800a, 1800c, 1800e, 1800g are conducive to implement ALD technique and can be in conjunction with other embodiment, for example, merge chamber cap assembly 1032,1232,1632 and treatment chamber 1100,1500,1700 described in treatment chamber 200,800,900 or Figure 10 A-17D that adopts tool gas delivery system 230,830,930 in Fig. 1-8.
In one embodiment, the gas conveying assembly 1800a that Figure 18 A-18B illustrates comprises main gas duct 1864, and described main gas duct 1864 couples and is communicated with for fluid with gas inlet 1862.Gas inlet 1862 is axially placed on toward the gas of the treatment zone expansion of sediment chamber distributes 1828 tops, road.Main gas duct 1864 is 90 degree (as shown in Figure 18 A-18B) or is greater than or less than 90 degree (not shown) with the connection angle of gas inlet.Gas duct 1866a, 1866b, 1866c couple and are communicated with for fluid with main gas duct 1864.Gas duct 1866a, 1866b, 1866c connect respectively at least one gas source, for example precursor gas body source, process gas source, carrier gas source or purge gas source.After crossing gas duct 1866a, 1866b, 1866c from the gas stream of gas source, flow into main gas duct 1864.If gas flows from gas duct 1866a, 1866b, 1866c simultaneously, gas can be joined in specified point 1830a.Subsequently, gas flows to gas distribution road 1828 via gas inlet 1862.
In another embodiment, the structure of the similar gas conveying assembly of the gas conveying assembly 1800c 1800a that Figure 18 C-18D illustrates, but not containing main gas duct 1864.Gas conveying assembly 1800c comprises the gas inlet 1862 that is axially placed on gas distribution 1828 tops, road, and gas inlet 1862 is towards the treatment zone expansion of sediment chamber.Gas duct 1868a, 1868b, 1868c directly couple and are communicated with for fluid with gas inlet 1862.Gas inlet 1862 is 90 degree (as shown in Figure 18 B-18C) or is greater than or less than 90 degree (not shown) with the connection angle of gas duct 1868a, 1868b.Gas duct 1868a, 1868b, 1868c connect respectively at least one gas source, for example precursor gas body source, process gas source, carrier gas source or purge gas source.If gas flows from gas duct 1868a, 1868b, 1868c simultaneously, gas can be joined by the specified point 1830c directly over gas inlet 1862.Subsequently, gas flows to gas distribution road 1828 via gas inlet 1862.
In another embodiment, the structure of the similar gas conveying assembly of the gas conveying assembly 1800e 1800c that Figure 18 E-18F illustrates, but not containing a gas duct.Gas conveying assembly 1800e comprises the gas inlet 1862 that is axially placed on gas distribution 1828 tops, road, and gas inlet 1862 is towards the treatment zone expansion of sediment chamber.Gas duct 1870a, 1870b directly couple and are communicated with for fluid with gas inlet 1862.In one embodiment, gas inlet 1862 distributes the central shaft in road 1828 to measure as being less than 90 degree with the connection angle of gas duct 1870a, 1870b from gas, be for example approximately 10 degree to approximately 85 degree, preferably approximately 20 degree are spent to approximately 75, more preferably from about 30 degree are to approximately 60 degree, and for example approximately 45 spend.Gas duct 1870a, 1870b connect respectively at least one gas source, for example precursor gas body source, process gas source, carrier gas source or purge gas source.If gas flows from gas duct 1870a, 1870b simultaneously, gas can be joined by the specified point 1830e directly over gas inlet 1862, then flows to gas and distributes road 1828.
Figure 18 G-18H illustrates the basis gas conveying assembly 1800g of an embodiment again.Gas conveying assembly 1800g comprises the gas inlet 1862 that is axially placed on gas distribution 1828 tops, road, and gas inlet 1862 is towards the treatment zone expansion of sediment chamber.Gas duct 1872a, 1872b directly couple and are communicated with for fluid with gas inlet 1862.In one embodiment, gas inlet 1862 distributes the central shaft in road 1828 to measure as approximately 90 degree (as shown in Figure 18 G-18H) with the connection angle of gas duct 1872a, 1872b from gas.Or the connection angle of gas duct 1872a, 1872b and gas inlet 1862 is for being greater than or less than 90 degree (not shown).Baffle plate 1800a, 1800b are located in the gas flow paths of gas duct 1872a, 1872b, and pilot gas toward each other and/or upwards.Gas duct 1872a, 1872b connect respectively at least one gas source, for example precursor gas body source, process gas source, carrier gas source or purge gas source.If gas flows from gas duct 1872a, 1872b simultaneously, gas can be joined with the specified point 1830g directly over baffle plate 1800a, 1800b in gas inlet 1862.Then, flow of process gas air inlet body distributes road 1828.
Refer to that at this " ald (ALD) " used, " cyclic deposition " or " circulation layer deposition " in succession introducing two or more compound of reactions carrys out deposited material layer to substrate surface.Two, three or more kinds of compound of reaction maybe can introduce in the reaction zone or treatment zone for the treatment of chamber.The form of compound of reaction can be the state of matter that gas, plasma body, steam, fluid or other can be used for gas-phase deposition.Between each compound of reaction, conventionally separate with time lag, make compound be attached to substrate surface and/or in substrate surface reactions.In one aspect, pulse is supplied the first precursor or compd A to reaction zone, carries out the very first time to postpone.Then, pulse is supplied the second precursor or compd B to reaction zone, then carries out the second time lag.Compd A reacts with compd B and forms deposition material.During time lag, introduce Purge gas to treatment chamber, shift out outside reaction zone with emptying reaction zone or by the compound of reaction of arbitrary remnants or by product.Or sustainable inflow Purge gas in whole deposition process, so, during the time lag between each pulse supply compound of reaction, only has Purge gas to flow to.Compound of reaction or can pulse supply until the deposition of material of predetermined thickness in substrate surface.In either case, the ALD technique of pulse supply compd A, supply Purge gas, supply compd B, supply Purge gas is a circulation.Compd A or compd B can be first introduced in each circulation, and each step of proceeding circulation is until rete reaches pre-determined thickness.In another embodiment, the first precursor, the second precursor that contains compd B that contains compd A and the indivedual pulses of the 3rd precursor that contain Compound C are fed to treatment chamber.Or the time-interleaving that time of the first precursor can supply with pulse the second precursor is supplied in pulse, and the time of pulse supply the 3rd precursor with the time-interleaving of pulse supply the first or second precursor.Refer to pure gas, multiple gases, mixture containing gas, gas and/or the plasma body of plasma body at this " process gas ".Process gas comprises at least one compound of reaction for gas-phase deposition.The form of compound of reaction can be the state of matter that gas, plasma body, steam, fluid or other can be used for gas-phase deposition.Again, technique can comprise Purge gas or carrier gas, but not containing compound of reaction.
This " substrate " or " substrate surface " refer to the material surface on arbitrary substrate or the substrate that carries out rete processing.For example, depending on type used, the substrate surface of processing comprises such as silicon, silicon oxide, strained silicon, silicon-on-insulator (silicon on insulator; SOI), the material such as the silicon oxide of doping carbon, silicon nitride, doped silicon, germanium, gallium arsenide, glass, graphite, quartz and comprise other material depending on type used, for example metal, metal nitride, metal alloy and other electro-conductive material.Blocking layer, metal or the metal nitride of substrate surface comprises titanium, titanium nitride, nitrogen titanium silicide, tungsten, tungsten nitride, nitrogen tungsten silicide, tantalum, tantalum nitride or nitrogen tantalum silicide.Substrate can be had any size, the wafer of for example 200mm or 300mm and rectangle or square glass substrate.Substrate comprises semiconducter substrate, shows the substrate of substrate (for example LCD), solar panel and other kind.Unless otherwise specified, otherwise described embodiment and example are preferably implemented on the substrate of 200mm or 300mm size, more preferably 300mm size.The adoptable substrate of embodiment of the present invention comprises semiconductor wafer, for example silicon metal (for example Si<100> or Si<111>), silicon oxide, glass, quartz, strained silicon, SiGe, doping or unadulterated polysilicon, doping or unadulterated silicon wafer and patterning or non-patterned wafer, but not as limit.Substrate can experience pretreatment technology, uses grinding, etching, reduction, oxidation, hydroxide, annealing and/or baking substrate surface.
Although be directed to the preferred embodiment of the present invention aforementioned, can expect other and further embodiment and do not deviate from base region of the present invention of the present invention, scope of the present invention is determined by claims.
Claims (14)
1. for a multichannel injector for semiconductor process chamber, described injector comprises:
Substrate, described substrate limits the part that center gas is distributed road;
Multiple slits, described multiple slits are formed in described substrate and with described center gas and distribute Dao center axle clamp one angle;
The first gas passage, described the first gas passage is formed in described substrate and is coupled to the first gas joint ring in abutting connection with described multiple slits; And
The second gas passage, described the second gas passage is formed in described substrate and is coupled to and is arranged on the second gas joint ring of described the first gas joint ring below in abutting connection with described multiple slits.
2. multichannel injector as claimed in claim 1, wherein said multiple slits distribute road with gas described in an angle tangent.
3. multichannel injector as claimed in claim 2, wherein said angle is 0 degree to 90 degree.
4. multichannel injector as claimed in claim 2, wherein said angle is 0 degree to 45 degree.
5. multichannel injector as claimed in claim 2, wherein said angle is 0 degree to 20 degree.
6. multichannel injector as claimed in claim 1, wherein said slit reboots air-flow from each of described the first gas joint ring and described the second gas joint ring to form annular flow path in described center gas distribution road.
7. multichannel injector as claimed in claim 6, wherein said annular flow path comprises a flow pattern, the group that described flow pattern selects free vortex flow, spiral, spirals, curling, distortion, coiling, whirlpool and their derivative pattern form.
8. for a multichannel injector for semiconductor process chamber, described injector comprises:
Substrate, described substrate limits the part that center gas is distributed road, and wherein said gas distributes road to extend through the middle portion of described substrate;
The first gas joint ring, described the first gas joint ring is formed in described substrate and around described gas and distributes road;
The second gas joint ring, described the second gas joint ring is formed in described substrate and below described the first gas joint ring and distributes road around described gas;
Multiple slits, described multiple slits are formed in described substrate and are arranged on described the first gas and save between ring and described the second gas joint ring, and described multiple slits distribute road around described center gas;
The first gas passage, described the first gas passage is formed in described substrate and is coupled to described the first gas joint ring; And
The second gas passage, described the second gas passage is formed in described substrate and is coupled to described the second gas joint ring, wherein from the two gas stream of described the first gas joint ring and described the second gas joint ring through described multiple slits to form annular flow path in described center gas distribution road.
9. multichannel injector as claimed in claim 8, wherein said annular flow path comprises a flow pattern, the group that described flow pattern selects free vortex flow, spiral, spirals, curling, distortion, coiling, whirlpool and their derivative pattern form.
10. multichannel injector as claimed in claim 8, wherein said multiple slits and described gas distribute Dao center axle clamp one angle.
11. multichannel injectors as claimed in claim 10, wherein said multiple slits distribute road with gas described in an angle tangent.
12. multichannel injectors as claimed in claim 11, wherein said angle is 0 degree to 90 degree.
13. multichannel injectors as claimed in claim 11, wherein said angle is 0 degree to 45 degree.
14. multichannel injectors as claimed in claim 11, wherein said angle is 0 degree to 20 degree.
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| US86276406P | 2006-10-24 | 2006-10-24 | |
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|---|---|---|---|
| CN200780039651XA Division CN101528973B (en) | 2006-10-24 | 2007-10-24 | Vortex chamber lids for atomic layer deposition |
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| CN102586761B true CN102586761B (en) | 2014-10-15 |
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| CN201210033178.7A Active CN102586761B (en) | 2006-10-24 | 2007-10-24 | Vortex chamber lids for atomic layer deposition |
| CN201410196103.XA Active CN104073778B (en) | 2006-10-24 | 2007-10-24 | Vortex chamber lids for ald |
| CN200780039651XA Active CN101528973B (en) | 2006-10-24 | 2007-10-24 | Vortex chamber lids for atomic layer deposition |
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| CN200780039651XA Active CN101528973B (en) | 2006-10-24 | 2007-10-24 | Vortex chamber lids for atomic layer deposition |
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| KR101810532B1 (en) * | 2010-03-12 | 2017-12-19 | 어플라이드 머티어리얼스, 인코포레이티드 | Atomic layer deposition chamber with multi inject |
| US9322097B2 (en) | 2013-03-13 | 2016-04-26 | Applied Materials, Inc. | EPI base ring |
| KR101701257B1 (en) * | 2013-03-14 | 2017-02-01 | 어플라이드 머티어리얼스, 인코포레이티드 | Thin film encapsulation - thin ultra high barrier layer for oled application |
| US9890456B2 (en) * | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
| US10407771B2 (en) * | 2014-10-06 | 2019-09-10 | Applied Materials, Inc. | Atomic layer deposition chamber with thermal lid |
| US9951421B2 (en) * | 2014-12-10 | 2018-04-24 | Lam Research Corporation | Inlet for effective mixing and purging |
| JP6487747B2 (en) * | 2015-03-26 | 2019-03-20 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing apparatus and processing gas supply nozzle |
| FI128855B (en) * | 2019-09-24 | 2021-01-29 | Picosun Oy | Fluid distributing device for a thin-film deposition apparatus, related apparatus and methods |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1774525A (en) * | 2001-10-26 | 2006-05-17 | 应用材料有限公司 | Gas delivery apparatus for atomic layer deposition |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AUPO129096A0 (en) * | 1996-07-26 | 1996-08-22 | Boc Gases Australia Limited | Oxygen dissolver for pipelines or pipe outlets |
| US5951771A (en) * | 1996-09-30 | 1999-09-14 | Celestech, Inc. | Plasma jet system |
| US6213049B1 (en) * | 1997-06-26 | 2001-04-10 | General Electric Company | Nozzle-injector for arc plasma deposition apparatus |
| NO309625B1 (en) * | 1997-10-10 | 2001-02-26 | V Telemark Bedriftsraa Waskaas | Method for reducing current resistance in pipe and duct current |
| US6495233B1 (en) * | 1999-07-09 | 2002-12-17 | Applied Materials, Inc. | Apparatus for distributing gases in a chemical vapor deposition system |
| KR100319494B1 (en) * | 1999-07-15 | 2002-01-09 | 김용일 | Apparatus for Deposition of thin films on wafers through atomic layer epitaxial process |
| US6477980B1 (en) * | 2000-01-20 | 2002-11-12 | Applied Materials, Inc. | Flexibly suspended gas distribution manifold for plasma chamber |
| US6818250B2 (en) * | 2000-06-29 | 2004-11-16 | The Regents Of The University Of Colorado | Method for forming SIO2 by chemical vapor deposition at room temperature |
| US6734020B2 (en) * | 2001-03-07 | 2004-05-11 | Applied Materials, Inc. | Valve control system for atomic layer deposition chamber |
| US6632325B2 (en) * | 2002-02-07 | 2003-10-14 | Applied Materials, Inc. | Article for use in a semiconductor processing chamber and method of fabricating same |
| CN102154628B (en) * | 2004-08-02 | 2014-05-07 | 维高仪器股份有限公司 | Multi-gas distribution injector for chemical vapor deposition reactors |
| US7722719B2 (en) * | 2005-03-07 | 2010-05-25 | Applied Materials, Inc. | Gas baffle and distributor for semiconductor processing chamber |
-
2007
- 2007-10-24 KR KR1020097010664A patent/KR20090083404A/en not_active Application Discontinuation
- 2007-10-24 WO PCT/US2007/082369 patent/WO2008052047A2/en active Application Filing
- 2007-10-24 CN CN201210033172.XA patent/CN102586760B/en active Active
- 2007-10-24 TW TW096139939A patent/TWI410518B/en active
- 2007-10-24 CN CN201210033178.7A patent/CN102586761B/en active Active
- 2007-10-24 CN CN201410196103.XA patent/CN104073778B/en active Active
- 2007-10-24 KR KR1020137035044A patent/KR101448447B1/en active IP Right Grant
- 2007-10-24 KR KR1020127006822A patent/KR101432257B1/en active IP Right Grant
- 2007-10-24 CN CN200780039651XA patent/CN101528973B/en active Active
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1774525A (en) * | 2001-10-26 | 2006-05-17 | 应用材料有限公司 | Gas delivery apparatus for atomic layer deposition |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104073778A (en) | 2014-10-01 |
| TW201241228A (en) | 2012-10-16 |
| KR20120048685A (en) | 2012-05-15 |
| CN102586760B (en) | 2016-07-06 |
| TWI476297B (en) | 2015-03-11 |
| WO2008052047A2 (en) | 2008-05-02 |
| CN101528973B (en) | 2012-04-25 |
| CN104073778B (en) | 2017-08-25 |
| KR20140009593A (en) | 2014-01-22 |
| CN102586761A (en) | 2012-07-18 |
| CN101528973A (en) | 2009-09-09 |
| KR20090083404A (en) | 2009-08-03 |
| TWI410518B (en) | 2013-10-01 |
| KR101432257B1 (en) | 2014-08-21 |
| TW200833867A (en) | 2008-08-16 |
| CN102586760A (en) | 2012-07-18 |
| KR101448447B1 (en) | 2014-10-13 |
| WO2008052047A3 (en) | 2008-12-11 |
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