CN102569644B - Sb2Tey-Si3N4 composite phase change material for phase change memory and preparation method thereof - Google Patents
Sb2Tey-Si3N4 composite phase change material for phase change memory and preparation method thereof Download PDFInfo
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- 239000012782 phase change material Substances 0.000 title claims abstract description 48
- 239000002131 composite material Substances 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 230000008859 change Effects 0.000 title abstract description 14
- 229910052581 Si3N4 Inorganic materials 0.000 title abstract description 8
- 239000000203 mixture Substances 0.000 claims abstract description 14
- 230000002441 reversible effect Effects 0.000 claims abstract description 9
- 239000000126 substance Substances 0.000 claims abstract description 3
- 238000003860 storage Methods 0.000 claims description 29
- 230000007704 transition Effects 0.000 claims description 24
- 238000004544 sputter deposition Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 230000035784 germination Effects 0.000 claims description 2
- 238000002425 crystallisation Methods 0.000 abstract description 18
- 230000008025 crystallization Effects 0.000 abstract description 17
- 239000000463 material Substances 0.000 abstract description 16
- 230000004913 activation Effects 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 238000002844 melting Methods 0.000 abstract 2
- 230000008018 melting Effects 0.000 abstract 2
- 229910017629 Sb2Te3 Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 238000005265 energy consumption Methods 0.000 abstract 1
- 230000014759 maintenance of location Effects 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 19
- 238000005516 engineering process Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 230000009466 transformation Effects 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- -1 chalcogenide compound Chemical class 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011232 storage material Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000001787 chalcogens Chemical class 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000004567 concrete Substances 0.000 description 1
- 239000007799 cork Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 230000005039 memory span Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000002114 nanocomposite Substances 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- DDJAGKOCVFYQOV-UHFFFAOYSA-N tellanylideneantimony Chemical compound [Te]=[Sb] DDJAGKOCVFYQOV-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention discloses a Sb2Tey-Si3N4 composite phase change material for a phase change memory and a preparation method thereof. The material is a mixture containing four elements, namely antimony, tellurium, nitrogen and silicon; a Sb2Tey (y is more than 1 and less than 3) phase change material with reversible phase change capability is isolated by amorphous Si3N4 to form a nano-scale region, then a composite structure is formed, and the chemical formula is (Sb2Tey)x(Si3N4)100-x, wherein y is more than 1 and less than 3, and x is more than 60 and less than 100. By regulating the content of Si3N4 in the Sb2Tey-Si3N4 composite phase change material, different crystallization temperatures, melting points and crystallization activation energy can be obtained. Compared with a traditional Sb2Te3 material, the (Sb2Tey)x(Si3N4)100-x has higher crystallization temperature, better thermal stability and data retention and lower melting point; and furthermore, grain size after crystallization is small and energy consumption is low.
Description
Technical field
What the present invention relates to is a kind of composite phase-change composite material of microelectronics technology, more precisely a kind of composite phase-change composite material of the compositions of mixtures by antimony-tellurium-nitrogen-silicon.
Background technology
In semi-conductor market, memory occupies important seat, only two kinds of DRAM and FLASH have just accounted for 15% of whole market, along with progressively popularizing of portable electric appts, the market of non-volatility memorizer will constantly expand, consumers also can raise gradually to the requirement of the each side such as memory span, speed, and as the main flow memory of non-volatility memorizer, the development of FLASH technology has reached bottleneck, along with the development of integrated circuit, it is outstanding that the technical vulnerability of FLASH starts to become.Writing speed is slow, writes the shortcomings such as voltage is high, cycle-index is limited and has directly limited it and further apply.So be badly in need of wanting a kind of new memory technology to replace, memory technology can all be continued steadily towards small size future development.
Phase change memory technology is a kind of new ideas memory technology of just rising in recent years, it utilizes phase change composite material to realize data storage as storage medium, having broad application prospects, is a focus of current memory research, is considered to promise to be most main flow memory of future generation.Phase change film material mostly contains chalcogen, so be called again chalcogenide compound memory immediately.Be considered to have concurrently the semiconductor memory of many performances such as high speed, high density, low-power consumption, high reliability, low cost.The memory function of chalcogenide compound random asccess memory is that the reversible transition externally producing between amorphous and polycrystalline under energy by phase-change material realizes, chalcogenide compound is high resistant when amorphous state, when polycrystalline state, be low resistance state, phase transformation utilizes the resistance difference between high low resistance state to realize the storage of " 0 " and " 1 ".
In phase transition storage, Ge
2sb
2te
5be typical phase-change material, but in the middle of application, find Ge
2sb
2te
5material has larger variable density when phase transformation, and crystallization rate is not good, is generally hundreds of ns, and this can have influence on erasable speed and device reliability, and its crystallization temperature is lower in addition, is 160 ℃ of left and right, and this makes it at high temperature apply and have difficulties.Visible, Ge
2sb
2te
5be not classic phase-change material, particularly levy the application that some specific environment is required.
In sum, the multiple advantage such as research and develop that new phase-change material makes that device has that service speed is fast simultaneously, high reliability, high density, thermal stability are strong, low-cost or have outstanding properties in one-sided application, becomes current urgent problem.
Summary of the invention
The technical problem that the present invention mainly solves is to provide a kind of Sb for phase transition storage
2te
y-Si
3n
4composite phase-change material and preparation method, the advantage such as this composite phase-change material has that Heat stability is good, crystallization crystal grain are little, little, the low-power consumption of heat counterdiffusion between unit, Reset electric current are lower.
In order to solve the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of Sb for phase transition storage
2te
y-Si
3n
4composite phase-change material is a kind of by Sb
2te
yand Si
3n
4the mixture being composited, its chemical formula is (Sb
2te
y)
x(Si
3n
4)
100-x, 1 < y < 3,60 < x < 100 wherein.
Preferably, Si
3n
4in element not with Sb
2te
yin element Cheng Jian, and independently to exist mutually.
Preferably, Sb
2te
yby Si
3n
4be isolated into the region of nanoscale, phase-change material germination is fettered.
Preferably, Si
3n
4form with amorphous exists.
Preferably, Sb
2te
ywith Si
3n
4be evenly distributed.
Preferably, Sb
2te
ybecome graininess, particle diameter is nanometer scale.
Preferably, this composite phase-change material adopts electric pulse effect to realize the reversible transition of resistivity.The resistance difference of the resistance ratio low resistance state of high-impedance state is minimum reaches two orders of magnitude.
The present invention also provides a kind of above-mentioned Sb for phase transition storage
2te
y-Si
3n
4the preparation method of composite phase-change material: the method preparation (Sb that adopts More target sputtering together
2te
y)
x(Si
3n
4)
100-xcomposite phase-change material film, wherein 1 < y < 3,60 < x < 100.
As preferred version of the present invention, can adopt Sb
2te
3target and Si
3n
4target co-sputtering, or with Sb target, Te target and Si
3n
4target co-sputtering; Or with Sb target, Te target, Si target and N
2carry out cosputtering.
As preferred version of the present invention, adopt Sb
2te
3target and Si
3n
4during target co-sputtering, sputter body is argon gas, and base vacuum is less than 10
-4pa, sputtering pressure is 0.21Pa～0.22pa, Sb
2te
3target and Si
3n
4target all adopts radio-frequency power supply, and sputtering power is 20W.
In addition Si,
3n
4doping too much can cause material phase transformation performance to worsen, can be at Sb
2te
3the constant condition of sputtering power under, from 5W, start successively to promote Si
3n
4sputtering power to 40W, improve Si
3n
4proportion in composite material, determines Si by measured temperature-resistance curve
3n
4limit incorporation and optimal mixing amount.
Beneficial effect of the present invention is:
The composite phase-change material of a kind of compositions of mixtures with antimony-tellurium and silicon nitride that the present invention proposes, makes to have the Sb of reversible transition ability
2te
y(1 < y < 3) phase-change material is by amorphous Si
3n
4be isolated into the region of nanoscale, wherein Si
3n
4do not participate in reversible transition.
Si
3n
4doping, suppressed Sb
2te
ythe growth of (1 < y < 3) crystal grain, thus resistivity and the crystallization temperature of material promoted, reduced the fusion temperature of phase-change material.The increase of phase-change material crystalline resistance, has reduced the Reset electric current of phase change memory device, has overcome the excessive obstacle of phase-change material Reset electric current.The rising of crystallization temperature has promoted Sb
2te
y-Si
3n
4phase-change material device stability, the reduction of fusion temperature effectively reduces its power consumption.This Sb
2te
y-Si
3n
4composite phase-change material can be realized reversible transition as storage medium under the effect of electric pulse, before and after phase transformation, there is dividing of high low resistance state, difference can meet external circuit and differentiate like a cork " 0 " or " 1 ", the resistance difference of the resistance ratio low resistance state of its high-impedance state is minimum reaches two orders of magnitude, is comparatively desirable phase-change storage material.
Along with mixing Si
3n
4the increase of content, the amorphous of composite phase-change material and crystalline resistance rate be the increase of dullness all.Regulate Si in this composite phase-change material
3n
4content can obtain different crystallization temperatures, fusing point and crystallization activation energy.Therefore, can be by controlling Si in material
3n
4content obtain better phase transition performance, make the resistance difference between crystalline state and amorphous state larger, reduce threshold voltage, reduce power consumption; And obtain better thermal stability, make crystallization temperature at Si
3n
4effect under get a promotion, strengthen data confining force.
In addition, by control, mix Si
3n
4content, can also make the counterdiffusion that obtains less grain size after material crystallization, improves heat; With Sb
2te
3compare, strengthen Sb
2te
y-Si
3n
4with substrate (SiO
2, Si
3n
4) adhesion.By controlling Si in material
3n
4content, can also obtain change in volume is less before and after phase transformation phase change material film (than Sb
2te
3).And, because the effect of N can prevent that Si is at Sb
2te
yoxidation in (1 < y < 3).
Accompanying drawing explanation
Fig. 1 is different component Sb
2te
y-Si
3n
4the relation curve of composite phase-change material resistance and temperature.
Fig. 2 is a kind of based on Sb
2te
y-Si
3n
4the phase change memory unit structure schematic diagram of composite phase-change material.
Fig. 3 is pulse duration while being 1000ns, the resistance-voltage curve of device described in Fig. 2.
Embodiment
Below in conjunction with accompanying drawing, describe the preferred embodiments of the present invention in detail.
Sb of the present invention
2te
y-Si
3n
4the preparation method of composite phase-change material is various, can utilize magnetron sputtering, adopts the method preparation of More target sputtering together, for example, can use Sb
2te
3, Si
3n
4two alloys target cosputterings, can realize the adjusting of component by controlling two target position powers, also can use Sb target, Te target and SiN
4alloys target is carried out cosputtering and is prepared film, or follows N with Sb target, Te target, Si target
2cosputtering, these methods can be used for preparing the phase-change material of various components.The present embodiment is with Sb
2te
3target and Si
3n
4target co-sputtering is that example is prepared film sample.
Adopt Sb
2te
3target and Si
3n
4the method of target co-sputtering passes into purity simultaneously and is 99.999% Ar gas in cosputtering process, and concrete technological parameter is as follows: Sb
2te
3and Si
3n
4target all adopts radio-frequency power power supply; Select Sb
2te
3the power of target is 20W, and sputtering pressure is 0.21Pa.Si
3n
4radio-frequency power on target adopts respectively 5W, 10W, 20W, 30W, 40W, can obtain the Sb of different sputter rates and different component
2te
y-Si
3n
4film sample.
Prepare the film sample of different component on different substrates.Substrate is respectively Al film, Si sheet substrate, Si
3n
4sheet substrate, copper mesh.The sample that sputters at Al film is tested for SEM, measure the thickness of film, EDS measures phase change composite material component.Use analytical test as above to obtain Si
3n
4the radio-frequency power of target is 5W, Sb
2te
3when the direct current power of target is 20W, film composition is Sb
2te
2.52-(Si
3n
4)
0.054; Si
3n
4the radio-frequency power of target is 10W, Sb
2te
3when the direct current power of target is 20W, film composition is Sb
2te
2.77-(Si
3n
4)
0.11; Si
3n
4the radio-frequency power of target is 20W, Sb
2te
3when the direct current power of target is 20W, film composition is Sb
2te
2.16(Si
3n
4)
0.33; Si
3n
4the radio-frequency power of target is 30W, Sb
2te
3when the direct current power of target is 20W, film composition is Sb
2te
2.33-(Si
3n
4)
0.22; Si
3n
4the radio-frequency power of target is 40W, Sb
2te
3when the direct current power of target is 20W, film composition is Sb
2te
2.43(Si
3n
4)
0.22.
Sb
2te
y-Si
3n
4be a kind of phase-change material with phase-change characteristic, the performance of material can be passed through Si
3n
4content carries out cutting.Fig. 1 is for sputtering at Si
3n
4the Sb of the different component on sheet
2te
y-Si
3n
4thin-film material is the R-T curve that resistance-temperature test obtains, Sb
2te
y-Si
3n
4amorphous state and the crystalline resistance of thin-film material take the lead in Si
3n
4the increase of content and raising, when content reaches certain value (Sb
2te
3: 20W, Si
3n
4: in the time of 20W), Si
3n
4increase can make resistance reduce on the contrary.Component reaches Sb
2te
2.77-(Si
3n
4)
0.11, crystallization temperature is now 420K, the ratio of amorphous state and crystalline resistance surpasses 2 orders of magnitude, the Sb of this ratio
2te
y-Si
3n
4composite phase-change material film performance is optimum.
The Sb of the different component on copper mesh will be sputtered at
2te
y-Si
3n
4thin-film material is tested with TEM, Sb before and after research annealing
2te
y(1 < y < 3) and Si
3n
4the size of distribution situation, crystallization situation and particle.Use as above and analyze and can obtain, there is the Sb of reversible transition ability
2te
y(1 < y < 3) phase-change material is by amorphous Si
3n
4be isolated into the region of nanoscale, Sb
2te
y(1 < y < 3) and Si
3n
4be evenly distributed, Sb
2te
y(1 < y < 3) becomes graininess, and particle diameter is nanometer scale.
Figure 2 shows that based on Sb
2te
y-Si
3n
4the phase change memory structure schematic diagram of composite material, substrate upper strata TiN/Ti/Al is as common electrode, and W is as bottom electrode, and TiN covers Al as electrode again as adhesion layer surface.
Figure 3 shows that test is based on Sb
2te
y-Si
3n
4resistance-the voltage of the phase-change memory device of composite material (R-V) performance, when voltage is 1V, the resistance of device declines (from 1 * 10
6be reduced to 1 * 10
4), Sb is described
2te
y-Si
3n
4crystallization (set process) occurs composite material film when 1V reduces device resistance.When voltage is elevated to 2.9V, there is reset in film, and film changes amorphous into, and resistance rises (from 1 * 10
4be elevated to 1 * 10
6).
In sum, Sb provided by the invention
2te
y-Si
3n
4nano-composite phase-changing material, Si
3n
4in element not with Sb
2te
yelement Cheng Jian in (1 < y < 3), independently to exist mutually, has the Sb of reversible transition ability
2te
yphase-change material is by amorphous Si
3n
4be isolated into the region of nanoscale, Sb
2te
y(1 < y < 3) and Si
3n
4can be evenly distributed.Due to Si
3n
4buffer action, Sb
2te
ythe growth of (1 < y < 3) crystal grain is fettered, and crystal grain is less, has promoted the crystallization temperature of phase-change material, has increased the stability of phase change memory device.Meanwhile, due to Si
3n
4mix, the charge carrier in phase-change material is subject to amorphous Si
3n
4scattering, make mobility reduce resistivity and raise, effectively reduce Reset electric current.When component is Sb
2te
2.77-(Si
3n
4)
0.11, crystallization temperature is now 420K, the ratio of amorphous state and crystalline resistance surpasses 3 orders of magnitude, the Sb of this ratio
2te
y-Si
3n
4composite phase-change thin-film material best performance, meets the basic demand of phase-change storage material, is a kind of novel storage medium.
Here description of the invention and application is illustrative, not wants by scope restriction of the present invention in the above-described embodiments.Here the distortion of disclosed embodiment and change is possible, and for those those of ordinary skill in the art, the various parts of the replacement of embodiment and equivalence are known.Those skilled in the art are noted that in the situation that not departing from spirit of the present invention or substantive characteristics, and the present invention can be with other forms, structure, layout, ratio, and realizes with other substrates, material and parts.In the situation that not departing from the scope of the invention and spirit, can carry out other distortion and change to disclosed embodiment here.
Claims (10)
1. the Sb for phase transition storage storage medium
2te
y-Si
3n
4composite phase-change material, is characterized in that: be a kind of by Sb
2te
yand Si
3n
4the mixture being composited, its chemical formula is (Sb
2te
y)
x(Si
3n
4)
100-x, 1<y<3 wherein, 60 < x < 100.
2. a kind of Sb for phase transition storage storage medium according to claim 1
2te
y-Si
3n
4composite phase-change material, is characterized in that: Si
3n
4in element not with Sb
2te
yin element Cheng Jian, and independently to exist mutually.
3. a kind of Sb for phase transition storage storage medium according to claim 1
2te
y-Si
3n
4composite phase-change material, is characterized in that: Sb
2te
yby Si
3n
4be isolated into the region of nanoscale, phase-change material germination is fettered.
4. a kind of Sb for phase transition storage storage medium according to claim 1
2te
y-Si
3n
4composite phase-change material, is characterized in that: Si
3n
4form with amorphous exists.
5. a kind of Sb for phase transition storage storage medium according to claim 1
2te
y-Si
3n
4composite phase-change material, is characterized in that: Sb
2te
ywith Si
3n
4be evenly distributed.
6. a kind of Sb for phase transition storage storage medium according to claim 1
2te
y-Si
3n
4composite phase-change material, is characterized in that: Sb
2te
ybecome graininess, particle diameter is nanometer scale.
7. a kind of Sb for phase transition storage storage medium according to claim 1
2te
y-Si
3n
4composite phase-change material, is characterized in that: adopt electric pulse effect to realize the reversible transition of resistivity.
8. the Sb for phase transition storage storage medium
2te
y-Si
3n
4the preparation method of composite phase-change material, is characterized in that: the method preparation (Sb that adopts More target sputtering together
2te
y)
x(Si
3n
4)
100-xcomposite phase-change material film, 1<y<3 wherein, 60 < x < 100.
9. a kind of Sb for phase transition storage storage medium according to claim 8
2te
y-Si
3n
4the preparation method of composite phase-change material, is characterized in that: adopt Sb
2te
3target and Si
3n
4target co-sputtering, or with Sb target, Te target and Si
3n
4target co-sputtering; Or with Sb target, Te target, Si target and N
2cosputtering.
10. a kind of Sb for phase transition storage storage medium according to claim 8
2te
y-Si
3n
4the preparation method of composite phase-change material, is characterized in that: adopt Sb
2te
3target and Si
3n
4during target co-sputtering, sputter body is argon gas, and base vacuum is less than 10
-4pa, sputtering pressure is 0.21Pa～0.22pa, Sb
2te
3target and Si
3n
4target all adopts radio-frequency power supply, and sputtering power is 20W.
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| CN104241527B (en) * | 2014-09-30 | 2017-10-27 | 中国科学院上海微***与信息技术研究所 | V Sb Te phase-change material systems for phase transition storage and preparation method thereof |
| CN104485417A (en) * | 2014-12-16 | 2015-04-01 | 曲阜师范大学 | Technology for improving GeSbTe phase change property and thin film preparation method thereof |
| CN112786782B (en) * | 2021-01-11 | 2022-09-20 | 宁波大学 | Sb-Si for phase change memory 3 N 4 Thin film material and preparation method thereof |
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| CN101276617A (en) * | 2007-03-26 | 2008-10-01 | 光洋应用材料科技股份有限公司 | Composite type phase variation recording thin film as well as target material and method for manufacturing the thin film |
| CN101308903A (en) * | 2007-05-14 | 2008-11-19 | 财团法人工业技术研究院 | Phase-change memory element |
| US7504652B2 (en) * | 2005-07-13 | 2009-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Phase change random access memory |
| CN101660118A (en) * | 2009-09-10 | 2010-03-03 | 中国科学院上海微***与信息技术研究所 | Nanometer composite phase-change material, preparation and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7504652B2 (en) * | 2005-07-13 | 2009-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Phase change random access memory |
| CN101276617A (en) * | 2007-03-26 | 2008-10-01 | 光洋应用材料科技股份有限公司 | Composite type phase variation recording thin film as well as target material and method for manufacturing the thin film |
| CN101308903A (en) * | 2007-05-14 | 2008-11-19 | 财团法人工业技术研究院 | Phase-change memory element |
| CN101660118A (en) * | 2009-09-10 | 2010-03-03 | 中国科学院上海微***与信息技术研究所 | Nanometer composite phase-change material, preparation and application thereof |
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