CN102569644A - Sb2Tey-Si3N4 composite phase change material for phase change memory and preparation method thereof - Google Patents
Sb2Tey-Si3N4 composite phase change material for phase change memory and preparation method thereof Download PDFInfo
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- CN102569644A CN102569644A CN2010105904061A CN201010590406A CN102569644A CN 102569644 A CN102569644 A CN 102569644A CN 2010105904061 A CN2010105904061 A CN 2010105904061A CN 201010590406 A CN201010590406 A CN 201010590406A CN 102569644 A CN102569644 A CN 102569644A
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- 239000012782 phase change material Substances 0.000 title claims abstract description 48
- 239000002131 composite material Substances 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 230000008859 change Effects 0.000 title abstract description 14
- 229910052581 Si3N4 Inorganic materials 0.000 title abstract description 8
- 239000000203 mixture Substances 0.000 claims abstract description 12
- 230000002441 reversible effect Effects 0.000 claims abstract description 9
- 239000000126 substance Substances 0.000 claims abstract description 3
- 230000007704 transition Effects 0.000 claims description 23
- 238000003860 storage Methods 0.000 claims description 20
- 238000004544 sputter deposition Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 230000035784 germination Effects 0.000 claims description 2
- 238000002425 crystallisation Methods 0.000 abstract description 18
- 230000008025 crystallization Effects 0.000 abstract description 17
- 239000000463 material Substances 0.000 abstract description 16
- 230000004913 activation Effects 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 238000002844 melting Methods 0.000 abstract 2
- 230000008018 melting Effects 0.000 abstract 2
- 229910017629 Sb2Te3 Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 238000005265 energy consumption Methods 0.000 abstract 1
- 230000014759 maintenance of location Effects 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 18
- 238000005516 engineering process Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 230000009466 transformation Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- -1 chalcogenide compound Chemical class 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011232 storage material Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000001787 chalcogens Chemical class 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000004567 concrete Substances 0.000 description 1
- 239000007799 cork Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 230000005039 memory span Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000002114 nanocomposite Substances 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- DDJAGKOCVFYQOV-UHFFFAOYSA-N tellanylideneantimony Chemical compound [Te]=[Sb] DDJAGKOCVFYQOV-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention discloses a Sb2Tey-Si3N4 composite phase change material for a phase change memory and a preparation method thereof. The material is a mixture containing four elements, namely antimony, tellurium, nitrogen and silicon; a Sb2Tey (y is more than 1 and less than 3) phase change material with reversible phase change capability is isolated by amorphous Si3N4 to form a nano-scale region, then a composite structure is formed, and the chemical formula is (Sb2Tey)x(Si3N4)100-x, wherein y is more than 1 and less than 3, and x is more than 60 and less than 100. By regulating the content of Si3N4 in the Sb2Tey-Si3N4 composite phase change material, different crystallization temperatures, melting points and crystallization activation energy can be obtained. Compared with a traditional Sb2Te3 material, the (Sb2Tey)x(Si3N4)100-x has higher crystallization temperature, better thermal stability and data retention and lower melting point; and furthermore, grain size after crystallization is small and energy consumption is low.
Description
Technical field
What the present invention relates to is a kind of composite phase-change composite material of microelectronics technology, more precisely is a kind of composite phase-change composite material of being made up of the mixture of antimony-tellurium-nitrogen-silicon.
Background technology
In semi-conductor market; Memory occupies important seat, and only DRAM and FLASH have just accounted for 15% of whole market for two kinds, along with progressively popularizing of portable electric appts; The market of non-volatility memorizer will constantly enlarge; Consumers also can raise to the requirement of each side such as memory span, speed gradually, and as the main flow memory of non-volatility memorizer, the development of FLASH technology has reached bottleneck; Along with the continuous development of integrated circuit, it is outstanding that the technical vulnerability of FLASH begins to become.Writing speed is slow, writes shortcomings such as voltage height, cycle-index be limited and has directly limited its further application.So be badly in need of wanting a kind of new memory technology to replace, make that memory technology can all continue to develop towards the small size direction steadily.
The phase change memory technology is a kind of new ideas memory technology of just rising in recent years; It utilizes phase change composite material to realize storage as storage medium; Having broad application prospects, is a focus of present memory research, is considered to promise to be most main flow memory of future generation.Phase change film material mostly contains chalcogen, so be called chalcogenide compound memory immediately again.Be considered to have concurrently the semiconductor memory of many performances such as high speed, high density, low-power consumption, high reliability, low cost.The memory function of chalcogenide compound random asccess memory is that the reversible transition of leaning on phase-change material externally to produce between amorphous and the polycrystalline under the energy realizes; Chalcogenide compound is a high resistant when amorphous state; When the polycrystalline attitude is low resistance state, and phase transformation utilizes the resistance difference between the high low resistance state to realize the storage of " 0 " and " 1 ".
In phase transition storage, Ge
2Sb
2Te
5Be typical phase-change material, but in the middle of using, find Ge
2Sb
2Te
5Material has bigger variable density when phase transformation, crystallization rate is not good, is generally hundreds of ns, and this can have influence on erasable speed and device reliability, and its crystallization temperature is lower in addition, is about 160 ℃, and this makes it at high temperature use and has difficulties.Thus it is clear that, Ge
2Sb
2Te
5Be not classic phase-change material, particularly levy the application that some specific environment is required.
In sum, research and develop that new phase-change material makes that device has simultaneously that service speed is fast, multiple advantage such as high reliability, high density, thermal stability are strong, low cost or on one-sided the application, have outstanding properties, become present urgent problem.
Summary of the invention
The technical problem that the present invention mainly solves is to provide a kind of Sb that is used for phase transition storage
2Te
y-Si
3N
4Composite phase-change material and preparation method, advantage such as this composite phase-change material has that Heat stability is good, crystallization crystal grain are little, little, the low-power consumption of heat counterdiffusion between the unit, Reset electric current are lower.
In order to solve the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of Sb that is used for phase transition storage
2Te
y-Si
3N
4Composite phase-change material is a kind of by Sb
2Te
yAnd Si
3N
4The mixture that is composited, its chemical formula are (Sb
2Te
y)
x(Si
3N
4)
100-x, 1＜y＜3,60＜x＜100 wherein.
Preferable, Si
3N
4In element not with Sb
2Te
yIn element Cheng Jian, and independently to exist mutually.
Preferable, Sb
2Te
yBy Si
3N
4Be isolated into the zone of nanoscale, the phase-change material germination is fettered.
Preferable, Si
3N
4Form with amorphous exists.
Preferable, Sb
2Te
yWith Si
3N
4Be evenly distributed.
Preferable, Sb
2Te
yBecome graininess, particle diameter is a nanometer scale.
Preferable, this composite phase-change material adopts the electric pulse effect to realize the reversible transition of resistivity.Minimum two one magnitude that reach of the resistance difference of the resistance ratio low resistance state of high-impedance state.
The present invention also provides a kind of above-mentioned Sb that is used for phase transition storage
2Te
y-Si
3N
4The preparation method of composite phase-change material: the method preparation (Sb that adopts many target co-sputterings
2Te
y)
x(Si
3N
4)
100-xComposite phase-change material film, wherein 1＜y＜3,60＜x＜100.
As preferred version of the present invention, can adopt Sb
2Te
3Target and Si
3N
4Target co-sputtering is perhaps used Sb target, Te target and Si
3N
4Target co-sputtering; Perhaps use Sb target, Te target, Si target and N
2Carry out cosputtering.
As preferred version of the present invention, adopt Sb
2Te
3Target and Si
3N
4During target co-sputtering, the sputter body is an argon gas, and base vacuum is less than 10
-4Pa, sputtering pressure are 0.21Pa～0.22pa, Sb
2Te
3Target and Si
3N
4Target all adopts radio-frequency power supply, and sputtering power is 20W.
In addition, Si
3N
4Mixing too much can cause the material phase transformation mis-behave, can be at Sb
2Te
3The constant condition of sputtering power under, begin to promote one by one Si from 5W
3N
4Sputtering power to 40W, improve Si
3N
4Proportion in composite material is confirmed Si through measured temperature-resistance curve
3N
4Limit incorporation and optimal mixing amount.
Beneficial effect of the present invention is:
A kind of composite phase-change material of forming with the mixture of antimony-tellurium and silicon nitride that the present invention proposes makes the Sb with reversible transition ability
2Te
y(1＜y＜3) phase-change material is by amorphous state Si
3N
4Be isolated into the zone of nanoscale, wherein Si
3N
4Do not participate in reversible transition.
Si
3N
4Doping, suppressed Sb
2Te
yThe growth of (1＜y＜3) crystal grain, thus the resistivity and the crystallization temperature of material promoted, reduced the fusion temperature of phase-change material.The increase of phase-change material crystalline resistance has reduced the Reset electric current of phase change memory device, has overcome the excessive obstacle of phase-change material Reset electric current.The rising of crystallization temperature has promoted Sb
2Te
y-Si
3N
4The phase-change material device stability, the reduction of fusion temperature then effectively reduces its power consumption.This Sb
2Te
y-Si
3N
4Composite phase-change material can be realized reversible transition as storage medium under the effect of electric pulse; The branch that high low resistance state is arranged before and after the phase transformation; Difference can satisfy external circuit and differentiate " 0 " or " 1 " like a cork; Minimum two one magnitude that reach of the resistance difference of the resistance ratio low resistance state of its high-impedance state are comparatively desirable phase-change storage materials.
Along with mixing Si
3N
4The increase that the increase of content, the amorphous of composite phase-change material and crystalline resistance rate are all dull.Regulate Si in this composite phase-change material
3N
4Content can obtain different crystallization temperatures, fusing point and crystallization activation energy.Therefore, can be through Si in the control material
3N
4Content obtain better phase transformation performance, make the resistance difference between crystalline state and the amorphous state bigger, reduce threshold voltage, reduce power consumption; And obtain better thermal stability, make crystallization temperature at Si
3N
4Effect under get a promotion, strengthen the data confining force.
In addition, mix Si through control
3N
4Content, can also make the counterdiffusion that obtains littler grain size after the material crystallization, improves heat; With Sb
2Te
3Compare, strengthen Sb
2Te
y-Si
3N
4With substrate (SiO
2, Si
3N
4) adhesion.Through Si in the control material
3N
4Content, can also obtain change in volume is littler before and after the phase transformation phase change material film (than Sb
2Te
3).And, because the effect of N can prevent that Si is at Sb
2Te
yOxidation in (1＜y＜3).
Description of drawings
Fig. 1 is different component Sb
2Te
y-Si
3N
4The relation curve of composite phase-change material resistance and temperature.
Fig. 2 is a kind of based on Sb
2Te
y-Si
3N
4The phase change memory unit structure sketch map of composite phase-change material.
When Fig. 3 is 1000ns for pulse duration, the resistance-voltage curve of device described in Fig. 2.
Embodiment
Specify the preferred embodiments of the present invention below in conjunction with accompanying drawing.
Sb of the present invention
2Te
y-Si
3N
4The preparation method of composite phase-change material is various, can utilize magnetron sputtering, adopts the method preparation of many target co-sputterings, for example, can use Sb
2Te
3, Si
3N
4Two alloys target cosputterings can be realized the adjusting of component through controlling two target position powers, also can use Sb target, Te target and SiN
4Alloys target is carried out cosputtering and is prepared film, perhaps follows N with Sb target, Te target, Si target
2Cosputtering, these methods can be used for preparing the phase-change material of various components.Present embodiment is with Sb
2Te
3Target and Si
3N
4Target co-sputtering is that example prepares film sample.
Adopt Sb
2Te
3Target and Si
3N
4The method of target co-sputtering feeds purity and is 99.999% Ar gas simultaneously in the cosputtering process, concrete technological parameter is following: Sb
2Te
3And Si
3N
4Target all adopts the radio-frequency power power supply; Select Sb
2Te
3The power of target is 20W, and sputtering pressure is 0.21Pa.Si
3N
4Radio-frequency power on the target adopts 5W, 10W, 20W, 30W, 40W respectively, can obtain the Sb of different sputter rates and different component
2Te
y-Si
3N
4Film sample.
The film sample of preparation different component is on different substrates.Substrate is respectively Al film, Si sheet substrate, Si
3N
4Sheet substrate, copper mesh.The sample that sputters at the Al film is used for the SEM experiment, the thickness of MEASUREMENTS OF THIN, EDS measures the phase change composite material component.Utilization analytical test as above obtains Si
3N
4The radio-frequency power of target is 5W, Sb
2Te
3When the direct current power of target was 20W, film composition was Sb
2Te
2.52-(Si
3N
4)
0.054Si
3N
4The radio-frequency power of target is 10W, Sb
2Te
3When the direct current power of target was 20W, film composition was Sb
2Te
2.77-(Si
3N
4)
0.11Si
3N
4The radio-frequency power of target is 20W, Sb
2Te
3When the direct current power of target was 20W, film composition was Sb
2Te
2.16(Si
3N
4)
0.33Si
3N
4The radio-frequency power of target is 30W, Sb
2Te
3When the direct current power of target was 20W, film composition was Sb
2Te
2.33-(Si
3N
4)
0.22Si
3N
4The radio-frequency power of target is 40W, Sb
2Te
3When the direct current power of target was 20W, film composition was Sb
2Te
2.43(Si
3N
4)
0.22
Sb
2Te
y-Si
3N
4Be a kind of phase-change material with phase-change characteristic, the performance of material can be passed through Si
3N
4Content carries out cutting.Fig. 1 is for sputtering at Si
3N
4The Sb of the different component on the sheet
2Te
y-Si
3N
4Thin-film material is the R-T curve that resistance-temperature test obtains, Sb
2Te
y-Si
3N
4The amorphous state and the crystalline resistance of thin-film material take the lead in Si
3N
4The increase of content and raising is when content reaches certain value (Sb
2Te
3: 20W, Si
3N
4: in the time of 20W), Si
3N
4Increase resistance is reduced on the contrary.Component reaches Sb
2Te
2.77-(Si
3N
4)
0.11, the crystallization temperature of this moment is 420K, the ratio of amorphous state and crystalline resistance surpasses 2 one magnitude, the Sb of this ratio
2Te
y-Si
3N
4The composite phase-change material film performance is optimum.
With the Sb that sputters at the different component on the copper mesh
2Te
y-Si
3N
4Thin-film material is tested with TEM, Sb before and after the research annealing
2Te
y(1＜y＜3) and Si
3N
4The size of distribution situation, crystallization situation and particle.Utilization is as above analyzed and can be got, and has the Sb of reversible transition ability
2Te
y(1＜y＜3) phase-change material is by amorphous state Si
3N
4Be isolated into the zone of nanoscale, Sb
2Te
y(1＜y＜3) and Si
3N
4Be evenly distributed Sb
2Te
y(1＜y＜3) become graininess, and particle diameter is a nanometer scale.
Shown in Figure 2 is based on Sb
2Te
y-Si
3N
4The phase change memory structure sketch map of composite material, substrate upper strata TiN/Ti/Al are as common electrode, and W is as bottom electrode, and TiN covers Al as electrode again as the adhesion layer surface.
Shown in Figure 3 for testing based on Sb
2Te
y-Si
3N
4Resistance-the voltage of the phase-change memory device of composite material (R-V) performance, the resistance of device descends (from 1 * 10 when voltage is 1V
6Be reduced to 1 * 10
4), Sb is described
2Te
y-Si
3N
4Crystallization (set process) takes place when 1V composite material film reduces device resistance.When voltage was elevated to 2.9V, reset took place in film, and film changes amorphous into, and resistance rises (from 1 * 10
4Be elevated to 1 * 10
6).
In sum, Sb provided by the invention
2Te
y-Si
3N
4Nano-composite phase-changing material, Si
3N
4In element not with Sb
2Te
yElement Cheng Jian in (1＜y＜3) independently to exist mutually, has the Sb of reversible transition ability
2Te
yPhase-change material is by amorphous state Si
3N
4Be isolated into the zone of nanoscale, Sb
2Te
y(1＜y＜3) and Si
3N
4Can be evenly distributed.Because Si
3N
4Buffer action, Sb
2Te
yThe growth of (1＜y＜3) crystal grain is fettered, and crystal grain is less, has promoted the crystallization temperature of phase-change material, has increased the stability of phase change memory device.Simultaneously, because Si
3N
4Mix, the charge carrier in the phase-change material receives amorphous Si
3N
4Scattering, make mobility reduce resistivity and raise, effectively reduce the Reset electric current.When component is Sb
2Te
2.77-(Si
3N
4)
0.11, the crystallization temperature of this moment is 420K, the ratio of amorphous state and crystalline resistance surpasses 3 one magnitude, the Sb of this ratio
2Te
y-Si
3N
4Composite phase-change thin-film material best performance satisfies the basic demand of phase-change storage material, is a kind of novel storage medium.
Here description of the invention and application is illustrative, is not to want with scope restriction of the present invention in the above-described embodiments.Here the distortion of the embodiment that is disclosed and change are possible, and the replacement of embodiment is known with the various parts of equivalence for those those of ordinary skill in the art.Those skilled in the art are noted that under the situation that does not break away from spirit of the present invention or substantive characteristics, and the present invention can be with other forms, structure, layout, ratio, and realize with other substrates, material and parts.Under the situation that does not break away from the scope of the invention and spirit, can carry out other distortion and change here to the embodiment that is disclosed.
Claims (10)
1. Sb who is used for phase transition storage
2Te
y-Si
3N
4Composite phase-change material is characterized in that: be a kind of by Sb
2Te
yAnd Si
3N
4The mixture that is composited, its chemical formula are (Sb
2Te
y)
x(Si
3N
4)
100-x, 1＜y＜3,60＜x＜100 wherein.
2. according to the said a kind of Sb that is used for phase transition storage of claim 1
2Te
y-Si
3N
4Composite phase-change material is characterized in that: Si
3N
4In element not with Sb
2Te
yIn element Cheng Jian, and independently to exist mutually.
3. according to the said a kind of Sb that is used for phase transition storage of claim 1
2Te
y-Si
3N
4Composite phase-change material is characterized in that: Sb
2Te
yBy Si
3N
4Be isolated into the zone of nanoscale, the phase-change material germination is fettered.
4. according to the said a kind of Sb that is used for phase transition storage of claim 1
2Te
y-Si
3N
4Composite phase-change material is characterized in that: Si
3N
4Form with amorphous exists.
5. according to the said a kind of Sb that is used for phase transition storage of claim 1
2Te
y-Si
3N
4Composite phase-change material is characterized in that: Sb
2Te
yWith Si
3N
4Be evenly distributed.
6. according to the said a kind of Sb that is used for phase transition storage of claim 1
2Te
y-Si
3N
4Composite phase-change material is characterized in that: Sb
2Te
yBecome graininess, particle diameter is a nanometer scale.
7. according to the said a kind of Sb that is used for phase transition storage of claim 1
2Te
y-Si
3N
4Composite phase-change material is characterized in that: adopt the electric pulse effect to realize the reversible transition of resistivity.
8. Sb who is used for phase transition storage
2Te
y-Si
3N
4The preparation method of composite phase-change material is characterized in that: the method preparation (Sb that adopts many target co-sputterings
2Te
y)
x(Si
3N
4)
100-xComposite phase-change material film, wherein 1＜y＜3,60＜x＜100.
9. said according to Claim 8 a kind of Sb that is used for phase transition storage
2Te
y-Si
3N
4The preparation method of composite phase-change material is characterized in that: adopt Sb
2Te
3Target and Si
3N
4Target co-sputtering is perhaps used Sb target, Te target and Si
3N
4Target co-sputtering; Perhaps use Sb target, Te target, Si target and N
2Cosputtering.
10. said according to Claim 8 a kind of Sb that is used for phase transition storage
2Te
y-Si
3N
4The preparation method of composite phase-change material is characterized in that: adopt Sb
2Te
3Target and Si
3N
4During target co-sputtering, the sputter body is an argon gas, and base vacuum is less than 10
-4Pa, sputtering pressure are 0.21Pa～0.22pa, Sb
2Te
3Target and Si
3N
4Target all adopts radio-frequency power supply, and sputtering power is 20W.
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|---|---|---|---|
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|---|---|---|---|
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241527A (en) * | 2014-09-30 | 2014-12-24 | 中国科学院上海微***与信息技术研究所 | Phase change memory V-Sb-Te phase change material system and preparing method thereof |
| CN104485417A (en) * | 2014-12-16 | 2015-04-01 | 曲阜师范大学 | Technology for improving GeSbTe phase change property and thin film preparation method thereof |
| CN112786782A (en) * | 2021-01-11 | 2021-05-11 | 宁波大学 | Sb-Si for phase change memory3N4Thin film material and preparation method thereof |
Citations (4)
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104241527A (en) * | 2014-09-30 | 2014-12-24 | 中国科学院上海微***与信息技术研究所 | Phase change memory V-Sb-Te phase change material system and preparing method thereof |
| CN104241527B (en) * | 2014-09-30 | 2017-10-27 | 中国科学院上海微***与信息技术研究所 | V Sb Te phase-change material systems for phase transition storage and preparation method thereof |
| CN104485417A (en) * | 2014-12-16 | 2015-04-01 | 曲阜师范大学 | Technology for improving GeSbTe phase change property and thin film preparation method thereof |
| CN112786782A (en) * | 2021-01-11 | 2021-05-11 | 宁波大学 | Sb-Si for phase change memory3N4Thin film material and preparation method thereof |
| CN112786782B (en) * | 2021-01-11 | 2022-09-20 | 宁波大学 | Sb-Si for phase change memory 3 N 4 Thin film material and preparation method thereof |
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