CN102569441A - Copper indium diselenide solar cell and production method thereof - Google Patents
Copper indium diselenide solar cell and production method thereof Download PDFInfo
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- CN102569441A CN102569441A CN2010106010494A CN201010601049A CN102569441A CN 102569441 A CN102569441 A CN 102569441A CN 2010106010494 A CN2010106010494 A CN 2010106010494A CN 201010601049 A CN201010601049 A CN 201010601049A CN 102569441 A CN102569441 A CN 102569441A
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Abstract
The invention discloses a copper indium diselenide solar cell and a production method thereof, wherein the solar cell comprises a substrate, a back metal electrode, a light absorption layer, a transparent electric conduction layer and a contact electrode layer, the light absorption layer comprises a plurality of copper indium gallium diselenide films or copper indium gallium diselenide sulfur compound films which have different atom ratios, different target materials can be directly sputtered into a film on the back metal electrode in a direct current or radio frequency mode during the production process, so selenylation does not need to be carried out, the copper indium diselenide solar cell is safer, has high efficiency and costs less for production, components are easy to control, crystalline phases are single, the concentration is uniform, and the conversion efficiency is also improved.
Description
Technical field
The present invention relates to a kind of CIS class solar cell and preparation method thereof.
Background technology
In copper indium gallium class solar cell; Key is to make the process of CIGS thin-film or Cu-In-Ga-Se-S thin film; Usually in the manufacturing process of CIGS thin-film,, make copper indium gallium film with modes such as sputter copper indium gallium alloy target, common sputter copper gallium alloy target and indium target, common sputter copper gallium alloy target and copper and indium alloy targets; Then carry out the selenizing step or further vulcanize and process CIGS thin-film or Cu-In-Ga-Se-S thin film; Need at high temperature feed selenium steam, selenium hydride or hydrogen sulfide in the processing procedure, this all is the gas for toxic elements in human body, in the process of processing procedure and machine maintenance, all has potential worker's safety danger.
In addition, consuming time for a long time with the method processing procedure production time, stock utilization is not high, makes manufacturing cost expensive; In addition, through the CIGS thin-film of selenizing made, wherein the composition of copper, indium, gallium, selenium and crystalline phase are also inhomogeneous; Make composition be difficult to control, and Cu is often arranged on crystal boundary
xSe, In
2Se
3Etc. miscellaneous generation, and cause to such an extent that yield is not good, and then lowered the conversion efficiency of solar cell.
Moreover, the so-called powder metallurgy that adopts is also arranged, with single-element or alloy powder, even through ball mill mixing; High-temperature fusion becomes the CIGS alloys target of target, and the target of this form is not because of having chemical combination, the process of sputter; Be prone to produce segregation, make composition with changing service time, membranous reproducibility is not good.
Therefore, need a kind of solar cell with uniform ingredients CIGS thin-film or Cu-In-Ga-Se-S thin film, and safety and the processing procedure efficient that can improve, the manufacture method of processing procedure cost of reducing.
Summary of the invention
Main purpose of the present invention provides a kind of CIS class solar cell, and this indium selenium class solar cell comprises from bottom to top substrate, back-metal electrode, light absorbing zone, transparency conducting layer and the contact electrode layer of storehouse in regular turn.Light absorbing zone comprises a plurality of light absorption films, and the atomic ratio of said light absorption film is Cu
xIn
1-yGa
ySe
z, the copper-indium-gallium-selenium compound of 0≤x≤1.2,0≤y≤1,1.6≤z≤2.4 (CIGS) film, or be Cu for having atomic ratio
xIn
1-yGa
y(S
zSe
1-z)
2, the Cu-In-Ga-Se-S of 0.5≤x≤2,0≤y≤1,0≤z≤0.3 (CIGSS) compound film, and the atomic ratio of each light absorption film is different, can make according to demand.
Another object of the present invention provides a kind of manufacture method of CIS class solar cell.The manufacture method of CIS class solar cell comprises back electrode film forming step, light absorbing zone film forming step, transparency conducting layer film forming step and contact electrode and forms step; This back electrode film forming step is the metallic film that on substrate, forms highly reflective, with as the back-metal electrode.Light absorbing zone film forming step be a plurality of targets with different atomic ratios respectively at the back-metal electrode in regular turn with dc sputtering or radio frequency sputter and form a plurality of light absorption films, said target is that atomic ratio is Cu
xIn
1-yGa
ySe
z, the copper-indium-gallium-selenium compound target of 0≤x≤1.2,0≤y≤1,1.6≤z≤2.4, or be Cu
xIn
1-yGa
y(S
zSe
1-z)
2, the Cu-In-Ga-Se-S compound target of 0.5≤x≤2,0≤y≤1,0≤z≤0.3.
Transparency conducting layer film forming step is on this light absorbing zone, to form transparent conductive oxide film, wherein this transparency conducting layer can for ito thin film, AZO film, GZO film and IZO film at least one of them.It is on this transparency conducting layer, to form contact electrode that contact electrode forms step, and this contact electrode is formed with aluminium (Al), nickel (Ni) or its alloy usually.
Characteristics of the present invention are through directly forming light absorbing zone with several CIGS target or Cu-In-Ga-Se-S targets with different atomic ratios with the dc sputtering or the mode of radio frequency sputter; Need not pass through selenizing and sulfuration, have the processing procedure of safety, preferable processing procedure efficient and lower cost of manufacture.In addition, more or less freely with the mode of this CIGS target or Cu-In-Ga-Se-S target sputtering thin film for composition control, and the film crystalline phase that forms is single, and concentration is even, and photoelectric conversion efficiency also improves more.
Description of drawings
Fig. 1 is the structural representation of CIS class solar cell of the present invention.
Fig. 2 is the flow chart of the manufacture method of CIS class solar cell of the present invention.
[primary clustering symbol description]
1 CIS class solar cell
10 substrates
20 back-metal electrodes
30 light absorbing zones
31 first light absorption films
33 second light absorption films
35 the 3rd light absorption films
40 transparency conducting layers
50 contact electrode layers
60 resilient coatings
70 transparent oxide layers
The manufacture method of S1 indium selenium class solar cell
S10 back electrode film forming step
S20 light absorbing zone film forming step
S30 transparency conducting layer film forming step
The S40 contact electrode forms step
S50 resilient coating film forming step
S60 transparent oxide layer film forming step
Embodiment
Following conjunction with figs. and element numbers are done more detailed explanation to execution mode of the present invention, and those skilled in the art can be implemented after reading this specification.
Consult Fig. 1, the structural representation of CIS class solar cell of the present invention.As shown in Figure 1, CIS class solar cell 1 of the present invention comprises substrate 10, back-metal electrode 20, light absorbing zone 30, transparency conducting layer 40 and contact electrode layer 50.Substrate 10 can be Silicon Wafer, glass, acryl, rigid polymeric substrate or soft polymeric substrate.Back-metal electrode 20 is formed on the substrate 10, and the metal material formation for highly reflective is preferably molybdenum (Mo).Light absorbing zone 30 is formed on the back-metal electrode 20; Comprise a plurality of light absorption films; For example first light absorption film 31 shown in Fig. 1, second light absorption film 33 and the 3rd light absorption film 35, the first light absorption films 31, second light absorption film 33 and the 3rd light absorption film 35 are Cu for atomic ratio all
xIn
1-yGa
ySe
z, the CIGS of 0≤x≤1.2,0≤y≤1,1.6≤z≤2.4 (CIGS) compound film, or atomic ratio is Cu
xIn
1-yGa
y(S
zSe
1-z)
2, the Cu-In-Ga-Se-S of 0.5≤x≤2,0≤y≤1,0≤z≤0.3 (CIGSS) compound film.
Transparency conducting layer 40 is formed on the light absorbing zone 30, can be tin indium oxide (In doped Sn
2O
3, ITO) film, aluminum zinc oxide (Al doped ZnO, AZO) film, gallium oxide zinc (Ga doped ZnO, GZO) film and indium zinc oxide (In doped ZnO, IZO) film at least one of them.Contact electrode layer 50 is formed on the oxidic, transparent, conductive layers 40, is formed with aluminium (Al), nickel (Ni) or its alloy usually, and this contact electrode layer 50 is connected external circuit with back-metal electrode 20, and forms electric loop.
Further, can between light absorbing zone 30 and transparency conducting layer 40, resilient coating 60 be set, this resilient coating 50 can be by cadmium sulfide (CdS) film or indium selenium (In
2Se
3) film forms.In addition, can between light absorbing zone 30 or resilient coating 60 and transparency conducting layer 40, transparent oxide layer 70 be set, this transparent oxide layer 70 can be formed by unadulterated zinc oxide (i-ZnO) film.
Consult Fig. 2, the flow chart of the manufacture method of CIS class solar cell of the present invention.As shown in Figure 2; The manufacture method S1 of CIS class solar cell of the present invention comprises back electrode film forming step S10, light absorbing zone film forming step S20, transparency conducting layer film forming step S30 and contact electrode and forms step S40; This back electrode film forming step S10 is the metallic film that on substrate, forms highly reflective; Be preferably the molybdenum film, with as the back-metal electrode.Light absorbing zone film forming step S20 be at least with a plurality of targets with different atomic ratios respectively at the back-metal electrode in regular turn with direct current (DC) sputter or radio frequency (RF) sputter and form a plurality of light absorption films, said target is atomic ratio Cu
xIn
1-yGa
ySe
z, the copper-indium-gallium-selenium compound target of 0≤x≤1.2,0≤y≤1,1.6≤z≤2.4, or atomic ratio is Cu
xIn
1-yGa
y(S
zSe
1-z)
2, the Cu-In-Ga-Se-S compound target of 0.5≤x≤2,0≤y≤1,0≤z≤0.3.
Transparency conducting layer film forming step S30 forms transparent conductive oxide film on this light absorbing zone, wherein this transparency conducting layer can for ito thin film, AZO film, GZO film and IZO film at least one of them.Contact electrode forms step S40 and on this transparency conducting layer, forms contact electrode, and this contact electrode is formed with aluminium (Al), nickel (Ni) or its alloy usually.
Further; Can be between light absorbing zone film forming step S20 and transparency conducting layer film forming step S30; Comprising resilient coating film forming step S50, is between this light absorbing zone and this transparent conductive oxide film, resilient coating to be set, and this resilient coating can be formed by cadmium sulphide membrane or indium selenium film.In addition; Can be between light absorbing zone film forming step S20 or resilient coating film forming step S50 and transparency conducting layer film forming step S30; Comprise transparent oxide layer film forming step S60; Between this light absorbing zone or this resilient coating and this nesa coating are thin, to form a transparent oxide layer, this transparent oxide layer can be formed by unadulterated zinc oxide (i-ZnO) film.
Characteristics of the present invention are through directly forming light absorbing zone with several CIGS target or Cu-In-Ga-Se-S targets with different atomic ratios with the dc sputtering or the mode of radio frequency sputter; Need not pass through selenizing and sulfuration, have the processing procedure of safety, preferable processing procedure efficient and lower cost of manufacture.In addition, more or less freely with the mode of this CIGS target or Cu-In-Ga-Se-S target sputtering thin film for composition control, and the film crystalline phase that forms is single, and concentration is even, and photoelectric conversion efficiency also improves more.
The above only is in order to explain preferred embodiment of the present invention; Be not that attempt is done any pro forma restriction to this creation according to this; So all have in following any modification or the change of doing relevant this creation of identical spirit, all must be included in the category of this creation intention protection.
Claims (10)
1. CIS class solar cell comprises:
Substrate;
The back-metal electrode is formed on this substrate, with the metal material formation of highly reflective;
Light absorbing zone is formed on this back-metal electrode, and this light absorbing zone comprises a plurality of light absorption films, and said light absorption film is that atomic ratio is Cu
xIn
1-yGa
ySe
z, the copper-indium-gallium-selenium compound membrane of 0≤x≤1.2,0≤y≤1,1.6≤z≤2.4, or atomic ratio is Cu
xIn
1-yGa
y(S
zSe
1-z)
2, the CIGS sulfide thin film of 0.5≤x≤2,0≤y≤1,0≤z≤0.3;
Transparency conducting layer is formed on this light absorbing zone, is transparent conductive oxide film; And
The contact electrode layer is formed on this oxidic, transparent, conductive layers, forms with metal material or alloy material,
Wherein this contact electrode layer is connected external circuit with this back-metal electrode, and forms electric loop.
2. indium selenium class solar cell according to claim 1; Wherein this substrate is one of them of Silicon Wafer, glass, acryl, rigid polymeric substrate and soft polymeric substrate; The metal material of this highly reflective is a molybdenum; This transparent conductive oxide film be indium tin oxide films, aluminum zinc oxide film, gallium oxide zinc film and indium zinc oxide film at least one of them, this contact electrode layer forms with aluminium, nickel or its alloy.
3. indium selenium class solar cell according to claim 1 further is provided with resilient coating between this light absorbing zone and this transparency conducting layer, this resilient coating is formed by cadmium sulphide membrane or indium selenium film.
4. described indium selenium class solar cell further is provided with transparent oxide layer between this light absorbing zone and this transparency conducting layer, this transparent oxide layer is formed by unadulterated zinc-oxide film.
5. indium selenium class solar cell according to claim 3 further is provided with transparent oxide layer between this resilient coating and this transparency conducting layer, this transparent oxide layer is formed by unadulterated zinc-oxide film.
6. the manufacture method of a CIS class solar cell comprises:
Back electrode film forming step is the metallic film that on substrate, forms highly reflective, with as the back-metal electrode;
Light absorbing zone film forming step, be at least with a plurality of targets with different atomic ratios respectively at this back-metal electrode in regular turn with dc sputtering or radio frequency sputter and form a plurality of light absorption films, said target is respectively atomic ratio Cu
xIn
1-yGa
ySe
z, the copper-indium-gallium-selenium compound target of 0≤x≤1.2,0≤y≤1,1.6≤z≤2.4, or atomic ratio Cu
xIn
1-yGa
y(S
zSe
1-z)
2, the Cu-In-Ga-Se-S compound target of 0.5≤x≤2,0≤y≤1,0≤z≤0.3;
Transparency conducting layer film forming step is on this light absorbing zone, to form transparent conductive oxide film; And
Contact electrode forms step, on this transparency conducting layer, forms contact electrode.
7. method according to claim 6; Wherein this substrate is one of them of Silicon Wafer, glass, acryl, rigid polymeric substrate and soft polymeric substrate; The metal material of this highly reflective is a molybdenum; This transparent conductive oxide film be indium tin oxide films, aluminum zinc oxide film, gallium oxide zinc film and indium zinc oxide film at least one of them, this contact electrode layer is formed with aluminium, nickel or its alloy.
8. method according to claim 6; Wherein between this light absorbing zone film forming step and this transparency conducting layer film forming step; Further comprise resilient coating film forming step; Be between this light absorbing zone and this transparent conductive oxide film, resilient coating to be set, this resilient coating is formed by cadmium sulphide membrane or indium selenium film.
9. method according to claim 6; Wherein between this light absorbing zone film forming step and this transparency conducting layer film forming step; Comprise transparent oxide layer film forming step; Between this light absorbing zone and this transparency conducting layer film forming step, form transparent oxide layer, this transparent oxide layer is formed by unadulterated zinc-oxide film.
10. method according to claim 6; Wherein between this resilient coating film forming step and this transparency conducting layer film forming step; Comprise transparent oxide layer film forming step; Between this resilient coating and this transparency conducting layer film forming step, form transparent oxide layer, this transparent oxide layer is formed by unadulterated zinc-oxide film.
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| CN2010106010494A CN102569441A (en) | 2010-12-17 | 2010-12-17 | Copper indium diselenide solar cell and production method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106010494A CN102569441A (en) | 2010-12-17 | 2010-12-17 | Copper indium diselenide solar cell and production method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103318851A (en) * | 2013-05-24 | 2013-09-25 | 深圳市亚太兴实业有限公司 | Copper-indium-gallium-sulfur-selenium solar cell, film absorbing layer and preparation method thereof |
| CN103346213A (en) * | 2013-07-01 | 2013-10-09 | 上海中科高等研究院 | Preparation method for solar cell absorbing layer |
| CN103579383A (en) * | 2012-08-09 | 2014-02-12 | 三星Sdi株式会社 | Solar cell and manufacturing method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1367536A (en) * | 2002-03-08 | 2002-09-04 | 清华大学 | Copper-indium-galliun-selenium film solar cell and its preparation method |
| CN1585140A (en) * | 2004-06-14 | 2005-02-23 | 王东生 | Multi-absorbing-layer solar battery and manufacturing method thereof |
-
2010
- 2010-12-17 CN CN2010106010494A patent/CN102569441A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1367536A (en) * | 2002-03-08 | 2002-09-04 | 清华大学 | Copper-indium-galliun-selenium film solar cell and its preparation method |
| CN1585140A (en) * | 2004-06-14 | 2005-02-23 | 王东生 | Multi-absorbing-layer solar battery and manufacturing method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103579383A (en) * | 2012-08-09 | 2014-02-12 | 三星Sdi株式会社 | Solar cell and manufacturing method thereof |
| CN103318851A (en) * | 2013-05-24 | 2013-09-25 | 深圳市亚太兴实业有限公司 | Copper-indium-gallium-sulfur-selenium solar cell, film absorbing layer and preparation method thereof |
| CN103318851B (en) * | 2013-05-24 | 2017-02-15 | 徐东 | Copper-indium-gallium-sulfur-selenium solar cell, film absorbing layer and preparation method thereof |
| CN103346213A (en) * | 2013-07-01 | 2013-10-09 | 上海中科高等研究院 | Preparation method for solar cell absorbing layer |
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Application publication date: 20120711 |