CN102560438A - Method for improving performance of plasma enhance chemical vapor deposition equipment - Google Patents
Method for improving performance of plasma enhance chemical vapor deposition equipment Download PDFInfo
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- CN102560438A CN102560438A CN2012100148090A CN201210014809A CN102560438A CN 102560438 A CN102560438 A CN 102560438A CN 2012100148090 A CN2012100148090 A CN 2012100148090A CN 201210014809 A CN201210014809 A CN 201210014809A CN 102560438 A CN102560438 A CN 102560438A
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Abstract
The invention discloses a method for improving the performance of plasma enhance chemical vapor deposition equipment. The method comprises the following steps of: depositing films with different thicknesses on the inner wall of a reaction chamber in the reaction chamber of the plasma enhance chemical vapor deposition equipment, in which a plurality of resistance sensors are arranged, figuring out the change relationship between the resistance and the thickness of the film; and testing a resistance R when the thickness of the film deposited on the inner wall of the reaction chamber is T by sensing, comparing the R with a resistance R0 when no film exists in the reaction chamber and a resistance RM when the critical thickness of the film deposited in the reaction chamber is Tm, when the R is less than or equal to the RM, triggering the plasma enhance chemical vapor deposition equipment (PEVCD) to automatically clean by the resistance sensor, and when the R is equal to R0, enabling the PEVCD to stop cleaning. According to the method disclosed by the invention, the required time for cleaning the film can be accurately figured out, the generation efficiency of the equipment is increased and the stripping pollution of the film, caused by unclean cleaning of the inner chamber wall, is reduced.
Description
Technical field
The present invention relates to a kind of unicircuit manufacturing, relate in particular to a kind of method that improves the plasma auxiliary chemical vapor deposition equipment performance.
Background technology
PEVCD (plasma enhance chemical vapour deposition) equipment; Be in order to realize the equipment of chemical vapor deposition growth mode; Its principle is that material source is got in the PEVCD apparatus and process cavity with gas form, adds at RF under the situation of power, and material source (reactant gases) is from photoglow (Plasma: obtain intensity of activation argon-arc plasma field); Activate and the enhancing chemical reaction, thereby realize chemical vapor deposition.
PECVD equipment can be on the internal chamber wall of equipment in the deposit wafer the certain film of deposit simultaneously; Peel off to drop to produce above the wafer and pollute in order to prevent to be deposited on film on the internal chamber wall; Need the regular equipment internal chamber wall is cleaned; The foundation of cleaning usually is the thickness limit of internal chamber wall upper film, and because thin-film deposition on internal chamber wall, is difficult to calculate accurately the thickness of film.Industry method commonly used is that a thin-film deposition speed is set in advance, extrapolates whether reach the requirement of cleaning the internal chamber wall film according to the quantity of deposit wafer and the time of deposit wafer then.But adopt this kind method can accurately not calculate the thickness of reaction chamber inwall film, thereby thickness and the scavenging period that calculates is also just mutually inaccurate thus.If scavenging period is long, may causes certain damage to the reaction chamber inwall, and take the processed wafer time of equipment; If scavenging period is too short, then may clean not thoroughly, and cause in the process of growth wafer, the film on the internal chamber wall strips down and drops on the wafer and produce and pollute.
Summary of the invention
Problem to above-mentioned existence; The purpose of this invention is to provide a kind of method that improves the plasma auxiliary chemical vapor deposition equipment performance; Can accurately calculate and clean the needed time of this film, improve the formation efficiency of equipment and reduce to clean the film that does not totally cause and peel off pollution by internal chamber wall.
The objective of the invention is to realize through following technical proposals:
A kind of method that improves the plasma auxiliary chemical vapor deposition equipment performance wherein, may further comprise the steps:
Step S1: be provided with in the reaction chamber of plasma auxiliary chemical vapor deposition equipment of a plurality of resistance inductor blocks one, the film of deposit different thickness is in said reaction chamber inwall, and calculates the variation relation of resistance and said film thickness;
Step S2: induction tests out the resistance value R of said chamber inner wall deposition film thickness when being T, the resistance value R when relatively R and said reaction chamber do not have film
0With deposit critical thickness film T in the said reaction chamber
mThe time resistance value R
M
Step S3: work as R
R
MThe time, said resistance inductor block triggers said plasma auxiliary chemical vapor deposition equipment and cleans automatically;
Step S4: as R=R
0The time, said plasma auxiliary chemical vapor deposition equipment stops to clean.
The method of above-mentioned raising plasma auxiliary chemical vapor deposition equipment performance, wherein, sidewall in said reaction chamber and inwall top are respectively arranged with the resistance inductor block.
The method of above-mentioned raising plasma auxiliary chemical vapor deposition equipment performance, wherein, the number of said resistance inductor block is three.
The method of above-mentioned raising plasma auxiliary chemical vapor deposition equipment performance is characterized in that, the cleaning way in step S4 is to utilize to contain isoionic gas of F and silicon base compound reaction generation SiF
4, and utilize vacuum pump to take away.
The method of above-mentioned raising plasma auxiliary chemical vapor deposition equipment performance is characterized in that, in step S1, the variation relation of resistance and said film thickness is a linear decrease relation.
Compared with present technology, beneficial effect of the present invention is:
The present invention installs the resistance inductor block of measuring sheet resistance through the different positions in reaction chamber; Changes in resistance according to the chamber inner wall that sheet resistance is installed is responded to; When recording resistance and reach certain threshold value; The cleaning system that promptly triggers PEVCD equipment cleans, and when recording resistance value and be the resistance value when not having film, promptly stops to clean.
Method of the present invention can accurately calculate cleans the needed time of this film, thereby improves the formation efficiency of equipment, and the film that can reduce simultaneously to be caused by the internal chamber wall cleaning is peeled off pollution.
Description of drawings
Fig. 1 is a kind of method flow diagram that improves the method for plasma auxiliary chemical vapor deposition equipment performance of the present invention.
Fig. 2 is the structural representation of the PEVCD reaction chamber in a kind of method that improves the plasma auxiliary chemical vapor deposition equipment performance of the present invention.
Fig. 3 is reaction chamber inwall film thickness and the linear relationship synoptic diagram of reaction chamber inwall resistance in a kind of method that improves the plasma auxiliary chemical vapor deposition equipment performance of the present invention.
Embodiment
Below in conjunction with schematic diagram and concrete operations embodiment the present invention is described further.
Like Fig. 1-shown in Figure 3, a kind of method that improves the plasma auxiliary chemical vapor deposition equipment performance of the present invention wherein, may further comprise the steps:
Step S1: be provided with in the reaction chamber 1 of plasma auxiliary chemical vapor deposition equipment of a plurality of resistance inductor blocks 2 one, the film 4 of deposit different thickness and calculates the variation relation of resistance and film 4 thickness on reaction chamber inwall 1.
In the enforcement; As shown in Figure 3; Can on the sidewall 11,12 of reaction chamber 1 inwall and top 13, a resistance inductor block 2 be installed respectively, in order to record in the process of deposit wafer 3, the resistance value during the certain thickness film 4 that is deposited with simultaneously on sidewall 11,12 and the top 13.In the enforcement, the resistance value during in advance according to the film 4 of different thickness of record, thus calculate the relation between film 4 and the resistance; For example, be linear decrease relation between the resistance in as shown in Figure 2 and the thickness of film 4, wherein; The R axle is represented resistance value, and the T axle is represented the one-tenth-value thickness 1/10 of film 4.
Step S2: induction tests out the resistance value R of said chamber inner wall deposition film thickness when being T, the resistance value R when relatively R and said reaction chamber do not have film
0With deposit critical thickness film T in the said reaction chamber 1
mThe time resistance value R
M
In the enforcement, utilize the resistance that calculates in the step 1 and the linear relationship between the film 4, setting the resistance value that inductor block triggers purge signal is R
M, at this moment, the one-tenth-value thickness 1/10 of film 4 is T
mAnd the resistance value that triggers the signal that stops to clean is R
0, do not have the film 4 of deposit this moment in the reaction chamber 1.
In the enforcement, utilize 2 enforcements of resistance inductor block to record the resistance value R of the film 4 of reaction chamber 1 inwall deposit.
Step S3: work as R
R
MThe time, resistance inductor block 1 triggers PEVCD equipment and cleans automatically.
In this step, the resistance value R of the certain thickness film 4 of deposit in the reaction chamber that records 1 is less than or equal to the critical thickness T of film 4
mThe time resistance value R
MThe time, at this moment, 1 signal that sends cleaning of resistance inductor block, the cleaning system that triggers PEVCD equipment is to 1 cleaning in the reaction chamber.Wherein, cleaning way can select utilization to contain isoionic gas of F and silicon base compound reaction generation SiF
4, and utilize vacuum pump to take away
Step S4: as R=R
0The time, said PEVCD equipment stops to clean.
In this step, the resistance value R of the certain thickness film 4 of deposit in the reaction chamber that records 1 is R
0The time, at this moment, 1 of resistance inductor block sends the signal that stops to clean, thereby stops the cleaning to PEVCD equipment.
Utilizing a kind of method that improves the method for plasma auxiliary chemical vapor deposition equipment performance of the present invention to accurately calculate cleans the needed time of this film; Thereby improve the formation efficiency of equipment, the film that can reduce simultaneously to be caused by the internal chamber wall cleaning is peeled off pollution.
More than specific embodiment of the present invention is described in detail, but the present invention is not restricted to the specific embodiment of above description, it is just as example.To those skilled in the art, any to this equivalent modifications of carrying out and alternative also all among category of the present invention.Therefore, not breaking away from impartial conversion and the modification of having done under the spirit and scope of the present invention, all should contain within the scope of the invention.
Claims (5)
1. a method that improves the plasma auxiliary chemical vapor deposition equipment performance is characterized in that, may further comprise the steps:
Step S1: be provided with in the reaction chamber of plasma auxiliary chemical vapor deposition equipment of a plurality of resistance inductor blocks one, the film of deposit different thickness is in said reaction chamber inwall, and calculates the variation relation of resistance and said film thickness;
Step S2: induction tests out the resistance value R of said chamber inner wall deposition film thickness when being T, the resistance value R when relatively R and said reaction chamber do not have film
0With deposit critical thickness film T in the said reaction chamber
mThe time resistance value R
M
Step S3: as R≤R
MThe time, said resistance inductor block triggers said plasma auxiliary chemical vapor deposition equipment and cleans automatically;
Step S4: as R=R
0The time, said plasma auxiliary chemical vapor deposition equipment stops to clean.
2. the method for raising plasma auxiliary chemical vapor deposition equipment performance according to claim 1 is characterized in that, sidewall in said reaction chamber and inwall top are respectively arranged with the resistance inductor block.
3. the method for raising plasma auxiliary chemical vapor deposition equipment performance according to claim 1 and 2 is characterized in that, the number of said resistance inductor block is three.
4. the method for raising plasma auxiliary chemical vapor deposition equipment performance according to claim 1 is characterized in that, the cleaning way in step S4 is to utilize to contain isoionic gas of F and silicon base compound reaction generation SiF
4, and utilize vacuum pump to take away.
5. the method for raising plasma auxiliary chemical vapor deposition equipment performance according to claim 1 is characterized in that, in step S1, the variation relation of resistance and said film thickness is a linear decrease relation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100148090A CN102560438A (en) | 2012-01-18 | 2012-01-18 | Method for improving performance of plasma enhance chemical vapor deposition equipment |
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|---|---|---|---|
| CN2012100148090A CN102560438A (en) | 2012-01-18 | 2012-01-18 | Method for improving performance of plasma enhance chemical vapor deposition equipment |
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| CN102560438A true CN102560438A (en) | 2012-07-11 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104404479A (en) * | 2014-12-04 | 2015-03-11 | 北京七星华创电子股份有限公司 | Film thickness adjusting optimization method used in CVD (chemical vapor deposition) film forming process |
| CN106435470A (en) * | 2016-11-09 | 2017-02-22 | 上海华力微电子有限公司 | Baking cavity structure achieving automatic cleaning and automatic cleaning method of baking cavity structure |
| CN107119265A (en) * | 2017-04-27 | 2017-09-01 | 武汉华星光电技术有限公司 | Chemical vapor deposition process chamber room and its clean endpoint monitoring method |
| CN109238955A (en) * | 2018-11-19 | 2019-01-18 | 国电南京电力试验研究有限公司 | A kind of corrosion on-line measurement device and method of boiler tube Process of Chemical Cleaning |
| CN109671609A (en) * | 2017-10-17 | 2019-04-23 | 细美事有限公司 | Substrate board treatment and substrate processing method using same |
| CN110672667A (en) * | 2019-10-17 | 2020-01-10 | 北京航空航天大学 | Dynamic piezoresistive probe for measuring plasma deposition |
| CN114875382A (en) * | 2022-07-12 | 2022-08-09 | 江苏邑文微电子科技有限公司 | Method and device for cleaning chemical vapor deposition equipment, electronic equipment and storage medium |
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| JPH01302813A (en) * | 1988-05-31 | 1989-12-06 | Meidensha Corp | Manufacture of amorphous semiconductor thin film |
| CN1804114A (en) * | 2004-08-25 | 2006-07-19 | 东京毅力科创株式会社 | Thin film forming device and cleaning method thereof |
| CN101166583A (en) * | 2005-03-28 | 2008-04-23 | 朗姆研究公司 | Methods and apparatus for determining the endpoint of a cleaning or conditioning process in a plasma processing system |
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2012
- 2012-01-18 CN CN2012100148090A patent/CN102560438A/en active Pending
Patent Citations (3)
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| JPH01302813A (en) * | 1988-05-31 | 1989-12-06 | Meidensha Corp | Manufacture of amorphous semiconductor thin film |
| CN1804114A (en) * | 2004-08-25 | 2006-07-19 | 东京毅力科创株式会社 | Thin film forming device and cleaning method thereof |
| CN101166583A (en) * | 2005-03-28 | 2008-04-23 | 朗姆研究公司 | Methods and apparatus for determining the endpoint of a cleaning or conditioning process in a plasma processing system |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104404479A (en) * | 2014-12-04 | 2015-03-11 | 北京七星华创电子股份有限公司 | Film thickness adjusting optimization method used in CVD (chemical vapor deposition) film forming process |
| CN106435470A (en) * | 2016-11-09 | 2017-02-22 | 上海华力微电子有限公司 | Baking cavity structure achieving automatic cleaning and automatic cleaning method of baking cavity structure |
| CN107119265A (en) * | 2017-04-27 | 2017-09-01 | 武汉华星光电技术有限公司 | Chemical vapor deposition process chamber room and its clean endpoint monitoring method |
| CN107119265B (en) * | 2017-04-27 | 2019-05-21 | 武汉华星光电技术有限公司 | Chemical vapor deposition process chamber room and its clean endpoint monitoring method |
| CN109671609A (en) * | 2017-10-17 | 2019-04-23 | 细美事有限公司 | Substrate board treatment and substrate processing method using same |
| US10796891B2 (en) | 2017-10-17 | 2020-10-06 | Semes Co., Ltd. | Substrate processing apparatus and substrate processing method |
| CN109238955A (en) * | 2018-11-19 | 2019-01-18 | 国电南京电力试验研究有限公司 | A kind of corrosion on-line measurement device and method of boiler tube Process of Chemical Cleaning |
| CN110672667A (en) * | 2019-10-17 | 2020-01-10 | 北京航空航天大学 | Dynamic piezoresistive probe for measuring plasma deposition |
| CN114875382A (en) * | 2022-07-12 | 2022-08-09 | 江苏邑文微电子科技有限公司 | Method and device for cleaning chemical vapor deposition equipment, electronic equipment and storage medium |
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Application publication date: 20120711 |