CN102534518A - Backboard fabricating method - Google Patents
Backboard fabricating method Download PDFInfo
- Publication number
- CN102534518A CN102534518A CN2011104520482A CN201110452048A CN102534518A CN 102534518 A CN102534518 A CN 102534518A CN 2011104520482 A CN2011104520482 A CN 2011104520482A CN 201110452048 A CN201110452048 A CN 201110452048A CN 102534518 A CN102534518 A CN 102534518A
- Authority
- CN
- China
- Prior art keywords
- forges
- backboard
- forge
- midbody
- stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Forging (AREA)
Abstract
The invention discloses a backboard fabricating method, comprising the following steps of: providing a backboard casting piece; forging the backboard casting piece at a temperature of 800-1000 DEG C so as to form a backboard blank; and processing the backboard blank so as to form a backboard. According to the backboard fabricating method disclosed by the invention, the backboard with a finer and more uniform inner organization structure can be obtained, so that the backboard is prevented from distortion and deformation. On one hand, a deviation between each part of a target and a silicon wafer substrate is reduced, and the quality of a coating film is improved; and on the other hand, the service life of a sputtering target assembly is prolonged.
Description
Technical field
The present invention relates to semiconductor applications, relate in particular to the making method of backboard.
Background technology
In the large-scale in modern times integrated circuit fabrication process, magnetron sputtering becomes the most excellent substrate coating technology with advantages such as its sputtering raste are high, the substrate temperature rise is low, film-Ji bonding force is good.
In the magnetron sputtering membrane process, target material assembly constitutes by the target that meets sputtering performance with backboard that said target combines, has certain intensity.Said backboard not only is assembled in the sputter base station at said target material assembly and plays a supporting role, and its have the conduction heat effect, be used for the heat radiation of magnetron sputtering technique target.In the magnetron sputtering membrane process, the target material assembly Working environment is comparatively harsh.Target material assembly is in the bigger magnetic field of high temperature, high-voltage electric field and magneticstrength, and positive 10
-9Under the high vacuum environment of Pa, receive various high energy ion bombardments, cause target generation sputter, and neutral target atom that sputters or molecule deposition form film on substrate.The backboard of target material assembly in the process of sputter is because crystal grain rises big and crystal grain is inhomogeneous; Cause the backboard torsional deformation; Deviation between directly causing on the one hand at the bottom of target each several part and the silicon wafer-based; Make the abnormal parameters of plated film, influence the follow-up unicircuit quality of processing, can influence the work-ing life of sputtering target material on the other hand.
Therefore, when making backboard, need come the crystal grain of even refinement backboard through forging technology, target material assembly is used this backboard can improve service efficiency and work-ing life.But, forge the method for crystal grain of the even refinement backboard of technology at present is that all right ripe.With the brass backboard is example, contains a certain amount of zinc element in the brass backboard, and zinc is bcc metals, and backboard is prone to warm brittle phenomenon in the process of forging; Simultaneously, be distributed on the crystal boundary, forge the phenomenon that is prone to produce intergranular failure in the process owing to also exist lead, bismuth detrimental impurity and the backboard metallic copper of trace to form the low melting point eutectic film in the brass backboard.
Therefore, be necessary to propose a kind of making method of new backboard, with the crystal grain of the backboard that overcomes prior art equal defective of even not enough refinement inadequately.
Summary of the invention
The object of the present invention is to provide a kind of making method of backboard,, prevent the backboard torsional deformation to obtain all backboards of even enough refinements of internal organizational structure.
For solving above-mentioned topic, the making method of a kind of backboard of the present invention is characterized in that, comprising:
The backboard foundry goods is provided;
At 800 ℃～1000 ℃, said backboard foundry goods is forged, form the backboard blank;
Said backboard blank is handled, formed backboard.
Optional, said forging comprises five stages, be respectively the fs forge, subordinate phase forges, the phase III forges, stage forges with five-stage and forges.
Optional, before the said fs forges, the said fs forges and said subordinate phase forge between, the said phase III forges and said stage forge between, said stage forges and said five-stage is heat-treated between forging.
Optional, said heat treated temperature is 800 ℃～1000 ℃.
Optional, the said fs forges to compression forges, be of a size of after the said fs forges the fs forge before size 1/3rd to 1/2nd, form the fs to forge midbody;
Said subordinate phase forges to stretching forges, and is of a size of subordinate phase before said subordinate phase forges and forges 1/3rd to 1/2nd of back size, forms subordinate phase and forges midbody;
The said phase III forges to compression forges, be of a size of after the said phase III forges the phase III forge before size 1/3rd to 1/2nd, form the phase III to forge midbody;
Said stage forges to stretching forges, and is of a size of stage before said stage forges and forges 1/3rd to 1/2nd of back size, forms stage and forges midbody;
Said five-stage forges to compression forges, and is of a size of five-stage after said five-stage forges and forges 1/3rd to 1/2nd of preceding size, forms the backboard blank.
Optional; With said fs section hit mesosome clockwise upset 80 degree～100 degree forge and form second and forge midbody; With said subordinate phase forge midbody clockwise upset 80 degree～100 degree forge and form the 3rd and forge midbody, the said phase III is forged midbody turns over 80 degree～100 degree clockwise and forge and form the 4th and forge midbody.
Optional; With said fs section hit mesosome counterclockwise upset 80 degree～100 degree forge and form second and forge midbody; With said subordinate phase forge midbody counterclockwise upset 80 degree～100 degree forge and form the 3rd and forge midbody, with the said phase III forge midbody counterclockwise upset 80 degree～100 degree forge and form the 4th and forge midbody.
Optional, the said time that forges that each stage forges is 2min～3min.
Optional, the said pressure that forges that each stage forges is 300 tons～850 tons.
Optional, saidly said backboard blank is treated to solid solution aging handles.
Optional, said solid solution aging is handled and is carried out suddenly in two steps, is respectively the first step and second step, and the temperature of said first step is 500 ℃～800 ℃, and insulation 2h～4h, and the temperature of said second step is 200 ℃～500 ℃, and insulation 1h～3h.
Optional, the method that forms said backboard foundry goods is handled for the metal materials and parts being carried out the fusion foundry goods.
Optional, said metal materials and parts are copper alloy, duraluminum or are hardness, electroconductibility and the similar metal or alloy of copper.
Optional, said fusion foundry goods treatment temperature is 800 ℃～1000 ℃.
Compared with prior art, technical scheme of the present invention has the following advantages:
(1) 800 ℃～1000 ℃ forge and can the column crystal of backboard foundry goods be broken for close grain more easily; Can better repair the inner pore of above-mentioned backboard foundry goods; And then make its internal structure by the loose consolidation that becomes; Can access more all backboards of even enough refinements (grain size is 100 μ m～200 μ m) of internal organizational structure, prevent the backboard torsional deformation.Deviation between reducing on the one hand at the bottom of target each several part and the silicon wafer-based, the quality of raising plated film, the work-ing life of improving the sputtering target material assembly on the other hand.
(2) forge fs in the step forge, the phase III forges with five-stage forges to compression and forge; Subordinate phase forges to forge to stretching with stage and forges; The process that forges forges for compression and stretching forges and hockets; Can make backboard foundry goods and each forge midbody distortion maximization, can also maximized refinement forge the crystal grain of midbody with each with even backboard foundry goods.
(3) forge in the step with first forge midbody, second forge midbody, the 3rd forge midbody and the 4th forge midbody successively clockwise or counterclockwise upset 80 degree～100 degree forge; Can be on all directions better refinement backboard foundry goods and each stage forge the crystal grain of midbody, and better homogenizing backboard foundry goods and each stage forge the crystal grain of midbody.
(4) adopt two steps that said backboard blank is carried out solid solution aging and handle, promptly first step is backboard blank heating to 500 ℃～800 ℃, and insulation 2h～4h.Backboard blank heating to 200 after second step is handled first step ℃～500 ℃; And insulation 1h～3h; Thereby can better form the hardness that unidirectional sosoloid increases backboard; Hardness can reach more than the 100HV, can also obtain the less and uniform backboard of grain structure of crystalline-granular texture, and grain-size is 100 μ m～200 μ m.
Description of drawings
Fig. 1 is the schematic flow sheet of the backboard making method of the embodiment of the invention;
Fig. 2 to Fig. 8 is the synoptic diagram according to flow process shown in Figure 1.
Embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
Set forth a lot of details in the following description so that make much of the present invention, implement but the present invention can also adopt other to be different from alternate manner described here, so the present invention has not received the restriction of following disclosed specific embodiment.
The backboard said as the background technology part, that prior art is made, the torsional deformation phenomenon has appearred in the inhomogeneous and not enough refinement of interior tissue.In order to overcome above-mentioned defective, the invention provides a kind of making method of backboard, changed the internal organizational structure of backboard, make backboard weave construction more refinement with evenly.
The embodiment of the invention provides a kind of making method of backboard, and is as shown in Figure 1, comprising:
Step S11 provides the metal materials and parts;
Step S12 carries out the fusion foundry goods to said metal materials and parts and handles, and forms the backboard foundry goods;
Step S13 forges said backboard foundry goods, forms the backboard blank;
Step S14 carries out solid solution aging to said backboard blank and handles, and forms backboard.
Below in conjunction with accompanying drawing the method shown in above-mentioned Fig. 1 is elaborated.
At first performing step S11 provides the metal materials and parts.
The materials and parts of metal described in the present embodiment can be copper alloy or duraluminum.In other embodiments, said metal materials and parts can also be tungstenalloy, titanium alloy, perhaps can also be the similar alloy of hardness, electroconductibility and copper.
In practical application; The metal materials and parts can be the parts after cutting off from ingot metal; The shape of metal materials and parts; According to the actual requirement of applied environment, sputtering equipment, can be in right cylinder, rectangular parallelepiped, annular, cone or other analogous shapes (comprising regular shape and irregularly shaped) any.
Then performing step S12 carries out the fusion foundry goods to said metal materials and parts and handles, and forms the backboard foundry goods.
With the copper alloy is example, said metal materials and parts is placed on carries out fusion in the vacuum melting furnace, and melt temperature is 800 ℃～1000 ℃.If temperature is less than 800 ℃, the metal materials and parts can not fusion; If temperature greater than 1000 ℃, is prone to cause the waste of energy.And in the process of molten metal materials and parts; Also need bleed to said vacuum melting furnace; The probability that reacts with gas and the brass fused solution that reduces in the said vacuum melting furnace; Therefore bleed simultaneously at fused, make that hydrogen and/or the oxygen in the said vacuum melting furnace is controlled in the admissible scope.
In addition, if the metal materials and parts are duraluminum,, in said vacuum melting furnace, add protium and boron for guaranteeing the fused quality.Wherein, boron (for example boron trichloride) can be used for from molten aluminum liquid, removing nitride, carbide and oxide compound, improves aluminium backboard casting quality.
Then molten metal materials and parts flow is gone into to be cooled behind the mold and tentatively to be frozen into certain thickness backboard foundry goods, cool off through the for example types of cooling such as water spray or spraying steam again, make the backboard foundry goods solidify also moulding fully.In the present embodiment, as shown in Figure 2, said backboard foundry goods A is a right cylinder, and its diameter range is 170mm～210mm, height H
aScope is 300mm～400mm, and preferable diameter is 200mm, preferred height H
aBe 300mm.
Step S13 forges said backboard foundry goods, forms the backboard blank;
The step that forges in the present embodiment mainly is in order to eliminate casting flaws such as the inner original cast structure of backboard foundry goods is loose; Optimize the inner heterogeneous microstructure of backboard foundry goods; The column crystal of backboard foundry goods is broken for close grain; Repair the inner pore of above-mentioned backboard foundry goods, and then make its internal structure by the loose consolidation that becomes.
Forge described in the present embodiment and comprise forging of five stages, be respectively the fs to forge to five-stage and forge, wherein, before said forging of per stage, all heat-treat.Be specially:
The backboard foundry goods is carried out carrying out after the thermal treatment first time fs forge, form the fs to forge midbody.
Saidly carry out the thermal treatment first time and comprise: said backboard foundry goods A is placed thermal treatment unit; In said thermal treatment unit, can charge into controlled atmosphere or protective atmosphere; Rare gas element for example, temperature is heated to 800 ℃～1000 ℃, and insulation is heated evenly to its inside.If Heating temperature is less than 800 ℃; Backboard foundry goods A is not heated fully; Hardness ratio can't forge greatly when technology perhaps forges it and be easy to generate crackle, if Heating temperature greater than 1000 ℃, can cause the waste of heat energy on the one hand; The backboard foundry goods is too soft on the other hand, also is not easy to forge technology.
In conjunction with Fig. 2 and Fig. 3, the backboard foundry goods A after the thermal treatment first time is carried out the fs forge, form the fs to forge intermediate B.The said fs forges to forging the end face A1 of backboard foundry goods A, and promptly the fs forges the height H into compression backboard foundry goods A
a, when its minimizing 1/3rd or two/for the moment, the fs forges end of processing, and the pressure that forges in above-mentioned stage is 300 tons～750 tons, and the time of forging is generally 2min～3min, and the formation fs forges intermediate B.It is too big to forge pressure, is prone to exceed the elastic limit of backboard foundry goods; It is too little to forge pressure, makes to forge increased frequency, lowers efficiency, and makes that the time that forges is elongated, and then backboard foundry goods A cools off and is difficult for forging; The time that forges is too short, and then the deflection of backboard foundry goods A is not enough.In the present embodiment, the fs forges intermediate B and is similarly right cylinder, its height H
bBe backboard foundry goods height H
a1/3rd to 1/2nd, be preferably 1/3rd.In the present embodiment, it is 230mm～280mm that the fs forges the intermediate B diameter, height H
bBe 100mm～200mm, diameter is preferably 280mm, height H
b(subscript) is preferably 100mm.
Then, will forge intermediate B the fs and carry out the thermal treatment second time, specifically can be with reference to the thermal treatment first time.Fs after the thermal treatment second time is forged clockwise upset 80 degree～100 of intermediate B to be spent; Present embodiment is preferably 90 degree; Then, in conjunction with Fig. 3 and Fig. 4, the side B2 that the said fs is forged intermediate B carries out subordinate phase and forges; It is stretched, and the side length that will forge intermediate B the fs (is the height H that forges midbody the fs
b) be stretched to the length C that subordinate phase forges midbody C
aIn time, finish, and this moment, subordinate phase forged the length C of midbody C
aForge the height H of intermediate B for the fs
bTwice to three times.The pressure that forges that the above-mentioned stage forges process is 300 tons～750 tons, and the time of forging is 2min～3min.Form subordinate phase and forge midbody C.It is too big to forge pressure, is prone to exceed the elastic limit of backboard foundry goods; It is too little to forge pressure, makes to forge increased frequency, lowers efficiency, and makes that the time that forges is elongated, and then the fs forges the intermediate B cooling and is difficult for forging; The time that forges is too short, and then to forge the deflection of intermediate B not enough the fs.It is rectangular parallelepiped that said subordinate phase forges midbody C.In the present embodiment, subordinate phase forges the length C of midbody C
aBe 200mm～600mm, width C
bWith height C
cBe 130mm～170mm all, in the present embodiment, subordinate phase forges the length C of midbody C
aForge the height H of intermediate B for the fs
bBe preferably three times, subordinate phase forges the length C of midbody C
aBe preferably 300mm, width C
bWith height C
cAll be preferably 150mm.
Then, subordinate phase is forged midbody C carry out thermal treatment for the third time, specifically can be with reference to the thermal treatment first time.Subordinate phase after the thermal treatment is for the third time forged midbody C continue 80 degree of upset clockwise～100 degree; Present embodiment is preferably 90 degree; Foursquare the C1 that said subordinate phase is forged midbody C in conjunction with Fig. 4 and Fig. 5 carries out the phase III and forges, and subordinate phase forged the length C of midbody C
aBe compressed to the height D that the phase III forges midbody D
cIn time, finish, and phase III this moment forges the height D of midbody D
cIt is the length C that subordinate phase forges midbody C
a1/3rd to 1/2nd, the pressure that forges in above-mentioned stage is 300 tons～750 tons, the time of forging is 2min～3min, forms the phase III to forge midbody D.It is too big to forge pressure, is prone to exceed the elastic limit of backboard foundry goods; It is too little to forge pressure, makes to forge increased frequency, lowers efficiency, and makes that the time that forges is elongated, and then subordinate phase forges midbody C cooling and is difficult for forging; The time that forges is too short, and then to forge the deflection of midbody C not enough for subordinate phase.It is square (comprising the first side D1 and the second side D2) that the said phase III forges midbody D.In the present embodiment, the phase III forges the height D of midbody D
c, length D
aAnd width D
bAll be 66mm～300mm.Phase III forges the height D of midbody D
cBe preferably the length C that subordinate phase forges midbody C
a1/3rd, be 100mm.
In other embodiments, as shown in Figure 6, the phase III forges midbody and also can be rectangular parallelepiped D ' (comprise the first side D1 ' and the second side D2 ', the said first side D1 ' is a rectangle, and the second side D2 ' is a square).In the present embodiment, the phase III forges the height D of midbody D '
c' be 66mm～300mm, length D
a' and width D
b' be 170mm～220mm.Phase III forges the height D of midbody D '
c' be preferably the length C that subordinate phase forges midbody C
a1/3rd, be 100mm, length D
a' and width D
b' be preferably 200mm.
Then, will forge midbody D the phase III and carry out the 4th thermal treatment, specifically can be with reference to the thermal treatment first time.Phase III after the 4th thermal treatment is forged midbody D continue 80 degree of upset clockwise～100 degree; Present embodiment is preferably 90 degree; In conjunction with Fig. 5, Fig. 6 and Fig. 7; The first side D1 (also can be D1 ') that the said phase III is forged midbody D carries out stage and forges, and makes square D (also can be rectangular parallelepiped D ') height D
c(or D
c') direction stretches, promptly the 3rd forge midbody height D
c(or D
c') be stretched to the length E that stage forges intermediate E
aIn time, finish, and the pressure that forges in above-mentioned stage is 300 tons～750 tons, and the time of forging is 2min～3min, forms stage and forges intermediate E.It is too big to forge pressure, is prone to exceed the elastic limit of backboard foundry goods; It is too little to forge pressure, makes to forge increased frequency, lowers efficiency, and makes that the time that forges is elongated, and then the phase III forges midbody D cooling and is difficult for forging; The time that forges is too short, and then to forge the deflection of midbody D not enough the phase III.It is rectangular parallelepiped that said stage forges intermediate E, and to forge midbody C measure-alike with subordinate phase.Said stage forges the length E of intermediate E
aForge the height D of midbody D with the phase III
c(or D
c') ratio be 3: 1～2: 1, in the present embodiment, stage forges the length E of midbody
aBe 200mm～600mm, width E
bWith height E
cAll be 130mm～170mm.The length Ea and the 3rd that stage forges intermediate E forges the height D of midbody D
c(or D
c') ratio be preferably 3: 1, stage forges the length E of intermediate E
aBe preferably 300mm, width E
bWith height E
cBe preferably 150mm.
Then, stage is forged intermediate E carry out the 5th thermal treatment, specifically can be with reference to the thermal treatment first time.In conjunction with Fig. 7 and Fig. 8, the first side E1 that the stage after the 5th thermal treatment is forged intermediate E forges, and makes stage forge the height E of middle E
cCompression forms backboard blank F, and said backboard blank is a right cylinder, the latter's height H f and the former height E
cBetween ratio be 1: 3～1: 2, then five-stage forges end.The pressure that forges in above-mentioned stage is 300 tons～750 tons, and the time of forging is 2min～3min.It is too big to forge pressure, is prone to exceed the elastic limit of backboard foundry goods; It is too little to forge pressure, makes to forge increased frequency, lowers efficiency, and makes that the time that forges is elongated, and then stage forges the intermediate E cooling and is difficult for forging; The time that forges is too short, and then to forge the deflection of intermediate E not enough for stage.In the present embodiment, the diameter of backboard blank F is 530mm～580mm, height H
fBe 39mm～85mm, the height H of backboard blank F
fThe height E of E in the middle of forging with stage
cBetween ratio be preferably 1: 3, diameter is preferably 550mm, height H
fBe preferably 50mm, the production dimensional requirement of above-mentioned size conforms backboard blank.
Before forging, carry out heat treatment step in each stage; Can change the backboard foundry goods and forge the weave construction of the inside of midbody with each; Make backboard foundry goods and each forge midbody and eliminate stress and softened, improve its plasticity, make that finally the internal organizational structure of backboard blank is even.
Subordinate phase in the present embodiment forge to stage forge make in the process backboard foundry goods overturn clockwise successively 80 the degree～100 the degree; Form respectively that subordinate phase forges midbody, the phase III forges midbody and stage forges midbody; All forge on all directions of backboard foundry goods; The better crystal grain of refinement backboard foundry goods, and the better crystal grain of homogenizing backboard foundry goods.In other embodiments, also can to the backboard foundry goods overturn counterclockwise successively 80 the degree～100 the degree.
In this enforcement forge fs in the step forge, the phase III forges and five-stage forges to compression forges, and is of a size of 1/3rd to 1/2nd of size before forging after said compression forges; Subordinate phase forges to forge to stretching with stage and forges; Being of a size of before said stretching forges stretches forges 1/3rd to 1/2nd of back size; Can make backboard foundry goods and each forge midbody distortion maximization, can also maximized refinement forge the crystal grain of midbody with each with even backboard foundry goods.If deflection is too little, then the backboard foundry goods is not enough with each deformability that forges midbody, thereby misses one's aim; If deflection is too big, then make to forge difficult technique with control.
Forge described in the present embodiment and can adopt air hammer (Air Hammer) to accomplish, it is known for those skilled in the art, so repeat no more at this.In other embodiments, said forging also can be flat-die forging, die forging, jumping-up, extruding, die forging, closed die forging and enclosed upsetting etc.
Then, performing step S14 carries out solid solution aging to said backboard blank and handles, and forms backboard;
It is that alloy is heated to the unidirectional district's insulation of high temperature certain hour that solid solution aging is handled, and forms unidirectional sosoloid, and cooling then is to obtain the thermal treatment process of saturated solid solution.Solution treatment in the present embodiment need divide two steps to carry out.
At first, the backboard blank is heated to 500 ℃～800 ℃ in heating unit, is incubated 2h～4h then.
Then, continue the backboard blank is heated to 200 ℃～500 ℃ in heating unit, be incubated 1h～3h then.
Divide two steps to carry out solution treatment; On the one hand can be so that the crystal grain of backboard blank is not easy to grow up; The better effects if of backboard blank uniform crystal particlesization and refinement can obtain the less and uniform backboard of grain structure of crystalline-granular texture, and grain-size is 100 μ m～200 μ m; Thereby another aspect can better form the hardness that unidirectional sosoloid increases backboard, and hardness can reach more than the 100HV.Need to prove if there is not this operation, if or solid solution aging handle and to be regardless of that above-mentioned two steps are carried out then the hardness of backboard can be below 100HV.
Then, in air, said betrayal blank is cooled to normal temperature, forms backboard.
Adopt the making method of backboard of the present invention, following advantage arranged:
(1) 800 ℃～1000 ℃ forge and can the column crystal of backboard foundry goods be broken for close grain more easily; Can better repair the inner pore of above-mentioned backboard foundry goods; And then make its internal structure by the loose consolidation that becomes; Can access more all backboards of even enough refinements (grain size is 100 μ m～200 μ m) of internal organizational structure, prevent the backboard torsional deformation.Deviation between reducing on the one hand at the bottom of target each several part and the silicon wafer-based, the quality of raising plated film, the work-ing life of improving the sputtering target material assembly on the other hand.
(2) forge fs in the step forge, the phase III forges with five-stage forges to compression and forge; Subordinate phase forges to forge to stretching with stage and forges; The process that forges forges for compression and stretching forges and hockets; Can make backboard foundry goods and each forge midbody distortion maximization, can also maximized refinement forge the crystal grain of midbody with each with even backboard foundry goods.
(3) forge in the step with first forge midbody, second forge midbody, the 3rd forge midbody and the 4th forge midbody successively clockwise or counterclockwise upset 80 degree～100 degree forge; Can be on all directions better refinement backboard foundry goods and each stage forge the crystal grain of midbody, and better homogenizing backboard foundry goods and each stage forge the crystal grain of midbody.
(4) adopt two steps that said backboard blank is carried out solid solution aging and handle, promptly first step is backboard blank heating to 500 ℃～800 ℃, and insulation 2h～4h.Backboard blank heating to 200 after second step is handled first step ℃～500 ℃; And insulation 1h～3h; Thereby can better form the hardness that unidirectional sosoloid increases backboard; Hardness can reach more than the 100HV, can also obtain the less and uniform backboard of grain structure of crystalline-granular texture, and grain-size is 100 μ m～200 μ m.
Though the present invention discloses as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art are not breaking away from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (14)
1. the making method of a backboard is characterized in that, comprising:
The backboard foundry goods is provided;
At 800 ℃～1000 ℃, said backboard foundry goods is forged, form the backboard blank;
Said backboard blank is handled, formed backboard.
2. the making method of backboard as claimed in claim 1 is characterized in that, said forging comprises five stages, be respectively the fs forge, subordinate phase forges, the phase III forges, stage forges with five-stage and forges.
3. the making method of backboard as claimed in claim 2; It is characterized in that, before the said fs forges, the said fs forges and said subordinate phase forge between, the said phase III forges and said stage forge between, said stage forges and said five-stage is heat-treated between forging.
4. the making method of backboard as claimed in claim 3 is characterized in that, said heat treated temperature is 800 ℃～1000 ℃.
5. the making method of backboard as claimed in claim 2; It is characterized in that; The said fs forges to compression forges, be of a size of after the said fs forges the fs forge before size 1/3rd to 1/2nd, form the fs to forge midbody;
Said subordinate phase forges to stretching forges, and is of a size of subordinate phase before said subordinate phase forges and forges 1/3rd to 1/2nd of back size, forms subordinate phase and forges midbody;
The said phase III forges to compression forges, be of a size of after the said phase III forges the phase III forge before size 1/3rd to 1/2nd, form the phase III to forge midbody;
Said stage forges to stretching forges, and is of a size of stage before said stage forges and forges 1/3rd to 1/2nd of back size, forms stage and forges midbody;
Said five-stage forges to compression forges, and is of a size of five-stage after said five-stage forges and forges 1/3rd to 1/2nd of preceding size, forms the backboard blank.
6. the making method of backboard as claimed in claim 5; It is characterized in that; With said fs section hit mesosome clockwise upset 80 degree～100 degree forge and form second and forge midbody; With said subordinate phase forge midbody clockwise upset 80 degree～100 degree forge and form the 3rd and forge midbody, the said phase III is forged midbody turns over 80 degree～100 degree clockwise and forge and form the 4th and forge midbody.
7. the making method of backboard as claimed in claim 5; It is characterized in that; With said fs section hit mesosome counterclockwise upset 80 degree～100 degree forge and form second and forge midbody; With said subordinate phase forge midbody counterclockwise upset 80 degree～100 degree forge and form the 3rd and forge midbody, with the said phase III forge midbody counterclockwise upset 80 degree～100 degree forge and form the 4th and forge midbody.
8. the making method of backboard as claimed in claim 2 is characterized in that, the said time that forges that each stage forges is 2min～3min.
9. the making method of backboard as claimed in claim 2 is characterized in that, the said pressure that forges that each stage forges is 300 tons～850 tons.
10. the making method of backboard as claimed in claim 1 is characterized in that, saidly said backboard blank is treated to solid solution aging handles.
11. the making method of backboard as claimed in claim 1; It is characterized in that said solid solution aging is handled and carried out suddenly in two steps, is respectively the first step and second step; The temperature of said first step is 500 ℃～800 ℃; And insulation 2h～4h, the temperature of said second step is 200 ℃～500 ℃, and insulation 1h～3h.
12. the making method of backboard as claimed in claim 1 is characterized in that, the method that forms said backboard foundry goods is handled for the metal materials and parts being carried out the fusion foundry goods.
13. the making method of backboard as claimed in claim 12 is characterized in that, said metal materials and parts are copper alloy, duraluminum or are hardness, electroconductibility and the similar metal or alloy of copper.
14. the making method of backboard as claimed in claim 12 is characterized in that, said fusion foundry goods treatment temperature is 800 ℃～1000 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110452048 CN102534518B (en) | 2011-12-29 | 2011-12-29 | Backboard fabricating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110452048 CN102534518B (en) | 2011-12-29 | 2011-12-29 | Backboard fabricating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102534518A true CN102534518A (en) | 2012-07-04 |
| CN102534518B CN102534518B (en) | 2013-10-02 |
Family
ID=46342518
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110452048 Active CN102534518B (en) | 2011-12-29 | 2011-12-29 | Backboard fabricating method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102534518B (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104668897A (en) * | 2013-12-03 | 2015-06-03 | 宁波江丰电子材料股份有限公司 | Method for forming back plate |
| CN105586551A (en) * | 2014-10-21 | 2016-05-18 | 宁波江丰电子材料股份有限公司 | Thermal-treatment method for back boards |
| CN106040786A (en) * | 2015-04-14 | 2016-10-26 | 丰田自动车株式会社 | Method for processing metal-cast article |
| CN106521430A (en) * | 2015-09-09 | 2017-03-22 | 宁波江丰电子材料股份有限公司 | Production technology of tantalum aluminum target |
| CN105624622B (en) * | 2014-11-26 | 2018-02-09 | 宁波江丰电子材料股份有限公司 | The manufacture method of target material assembly |
| CN107841715A (en) * | 2016-09-20 | 2018-03-27 | 宁波江丰电子材料股份有限公司 | The preparation method of backboard |
| CN109804099A (en) * | 2016-12-28 | 2019-05-24 | 株式会社钢臂功科研 | The method for repairing and mending of sputtering target backboard repairs the sputtering target of the backboard finished and the backboard for having used repairing to finish |
| CN111321361A (en) * | 2018-12-14 | 2020-06-23 | 宁波江丰电子材料股份有限公司 | Manufacturing method of copper-chromium-nickel-silicon alloy back plate for sputtering target material |
| CN111378943A (en) * | 2018-12-29 | 2020-07-07 | 宁波江丰电子材料股份有限公司 | Manufacturing method of target alloy back plate |
| CN111644738A (en) * | 2020-06-04 | 2020-09-11 | 宁波江丰电子材料股份有限公司 | Aluminum target material assembly and welding method for reducing deformation of back plate in aluminum target material assembly |
| CN112170753A (en) * | 2020-08-27 | 2021-01-05 | 金嘉品（昆山）金属工业有限公司 | Semiconductor copper back target processing method |
| CN112475802A (en) * | 2020-11-19 | 2021-03-12 | 宁波江丰电子材料股份有限公司 | Method for assembling aluminum target and aluminum alloy back plate |
| CN112779483A (en) * | 2020-12-24 | 2021-05-11 | 徐州捷图机械有限公司 | Treatment method for internal porosity of aluminum alloy |
| CN114000072A (en) * | 2021-10-28 | 2022-02-01 | 宁波江丰电子材料股份有限公司 | Heat treatment method of copper back plate |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1425792A (en) * | 2002-09-02 | 2003-06-25 | 上海大学 | Composite heat processing and forming method for reinforced aluminium alloy |
| WO2005094280A2 (en) * | 2004-03-31 | 2005-10-13 | Honeywell International Inc. | High-strength backing plates, target assemblies, and methods of forming high-strength backing plates and target assemblies |
| CN1834281A (en) * | 2005-12-06 | 2006-09-20 | 北京有色金属研究总院 | Two-stage forced solution treatment method for high strength deformed aluminum alloy |
| CN102002656A (en) * | 2010-11-10 | 2011-04-06 | 中南大学 | Method for refining separated or dispersion-strengthening type block copper alloy crystal particles |
| WO2011108694A1 (en) * | 2010-03-05 | 2011-09-09 | 三菱マテリアル株式会社 | Processed high-purity copper material having uniform and fine crystalline structure, and process for production thereof |
-
2011
- 2011-12-29 CN CN 201110452048 patent/CN102534518B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1425792A (en) * | 2002-09-02 | 2003-06-25 | 上海大学 | Composite heat processing and forming method for reinforced aluminium alloy |
| WO2005094280A2 (en) * | 2004-03-31 | 2005-10-13 | Honeywell International Inc. | High-strength backing plates, target assemblies, and methods of forming high-strength backing plates and target assemblies |
| CN1834281A (en) * | 2005-12-06 | 2006-09-20 | 北京有色金属研究总院 | Two-stage forced solution treatment method for high strength deformed aluminum alloy |
| WO2011108694A1 (en) * | 2010-03-05 | 2011-09-09 | 三菱マテリアル株式会社 | Processed high-purity copper material having uniform and fine crystalline structure, and process for production thereof |
| CN102002656A (en) * | 2010-11-10 | 2011-04-06 | 中南大学 | Method for refining separated or dispersion-strengthening type block copper alloy crystal particles |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104668897A (en) * | 2013-12-03 | 2015-06-03 | 宁波江丰电子材料股份有限公司 | Method for forming back plate |
| CN105586551A (en) * | 2014-10-21 | 2016-05-18 | 宁波江丰电子材料股份有限公司 | Thermal-treatment method for back boards |
| CN105586551B (en) * | 2014-10-21 | 2019-05-10 | 宁波江丰电子材料股份有限公司 | The heat treatment method of backboard |
| CN105624622B (en) * | 2014-11-26 | 2018-02-09 | 宁波江丰电子材料股份有限公司 | The manufacture method of target material assembly |
| CN106040786A (en) * | 2015-04-14 | 2016-10-26 | 丰田自动车株式会社 | Method for processing metal-cast article |
| CN106521430A (en) * | 2015-09-09 | 2017-03-22 | 宁波江丰电子材料股份有限公司 | Production technology of tantalum aluminum target |
| CN107841715A (en) * | 2016-09-20 | 2018-03-27 | 宁波江丰电子材料股份有限公司 | The preparation method of backboard |
| CN109804099B (en) * | 2016-12-28 | 2021-05-07 | 株式会社钢臂功科研 | Method for repairing backing plate for sputtering target, backing plate after repair, and sputtering target |
| CN109804099A (en) * | 2016-12-28 | 2019-05-24 | 株式会社钢臂功科研 | The method for repairing and mending of sputtering target backboard repairs the sputtering target of the backboard finished and the backboard for having used repairing to finish |
| CN111321361A (en) * | 2018-12-14 | 2020-06-23 | 宁波江丰电子材料股份有限公司 | Manufacturing method of copper-chromium-nickel-silicon alloy back plate for sputtering target material |
| CN111378943A (en) * | 2018-12-29 | 2020-07-07 | 宁波江丰电子材料股份有限公司 | Manufacturing method of target alloy back plate |
| CN111644738A (en) * | 2020-06-04 | 2020-09-11 | 宁波江丰电子材料股份有限公司 | Aluminum target material assembly and welding method for reducing deformation of back plate in aluminum target material assembly |
| CN112170753A (en) * | 2020-08-27 | 2021-01-05 | 金嘉品（昆山）金属工业有限公司 | Semiconductor copper back target processing method |
| CN112170753B (en) * | 2020-08-27 | 2022-05-31 | 金嘉品（昆山）金属工业有限公司 | Semiconductor copper back target processing method |
| CN112475802A (en) * | 2020-11-19 | 2021-03-12 | 宁波江丰电子材料股份有限公司 | Method for assembling aluminum target and aluminum alloy back plate |
| CN112779483A (en) * | 2020-12-24 | 2021-05-11 | 徐州捷图机械有限公司 | Treatment method for internal porosity of aluminum alloy |
| CN114000072A (en) * | 2021-10-28 | 2022-02-01 | 宁波江丰电子材料股份有限公司 | Heat treatment method of copper back plate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102534518B (en) | 2013-10-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102534518B (en) | Backboard fabricating method | |
| CN109454188B (en) | Free forging method of Ti55531 titanium alloy large-size bar | |
| US9150956B2 (en) | Monolithic aluminum alloy target and method of manufacturing | |
| CN104128740A (en) | Preparation method of copper target | |
| CN102423802A (en) | Preparation method of highly-pure cobalt target | |
| CN102366833A (en) | Production method of tungsten-titanium target blank | |
| CN113198956B (en) | Forging method of austenitic stainless steel with ultrahigh silicon content | |
| CN103014510A (en) | High-strength cold-extrusion die steel and processing technology thereof | |
| CN111088481A (en) | Nickel target blank and method for manufacturing target material | |
| CN112680663B (en) | 9% Ni steel oversized rotor forging for ultralow temperature engineering and preparation method thereof | |
| CN105177342A (en) | Preparation method of ternary alloy sealing material | |
| CN105209657A (en) | Sputtering target/backing plate assembly | |
| CN111015111B (en) | Diffusion welding method for large-size titanium target and copper back plate | |
| CN102424940A (en) | Preparation method for high-purity cobalt target | |
| CN101862751B (en) | Cold rolling method for tungsten-copper alloy sheet | |
| CN102398035B (en) | Nickel target blank and target manufacturing methods | |
| CN106498226A (en) | A kind of photomultiplier tube dynode is with high beallon preparation method | |
| CN114346137B (en) | Hot working preparation method of large-size titanium alloy bar with uniform ribbon-shaped structure | |
| CN115717225A (en) | Composite shape thermal treatment process for refining titanium material grains | |
| CN111155060A (en) | Method for manufacturing cobalt target blank | |
| CN105483626B (en) | A kind of production method of fine grain planar molybdenum target material | |
| CN101775583B (en) | Method for manufacturing copper target components | |
| CN114000073A (en) | Process method for improving internal structure of high-purity nickel target material | |
| CN112813368A (en) | Novel high-performance Cu-Ni-Si alloy plate strip and production process thereof | |
| CN101733591A (en) | Method for manufacturing bright aluminum alloy welding wire |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 315400 Ningbo City, Yuyao Province Economic Development Zone, state science and Technology Industrial Park Road, No. 198, No. Patentee after: NINGBO JIANGFENG ELECTRONIC MATERIAL CO., LTD. Address before: 315400 Ningbo City, Yuyao Province Economic Development Zone, state science and Technology Industrial Park Road, No. 198, No. Patentee before: Ningbo Jiangfeng Electronic Materials Co., Ltd. |