CN102522493B - Laminated structure of piezoelectric nanowire and manufacturing method thereof - Google Patents
Laminated structure of piezoelectric nanowire and manufacturing method thereof Download PDFInfo
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- CN102522493B CN102522493B CN201110404235.3A CN201110404235A CN102522493B CN 102522493 B CN102522493 B CN 102522493B CN 201110404235 A CN201110404235 A CN 201110404235A CN 102522493 B CN102522493 B CN 102522493B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000002070 nanowire Substances 0.000 title abstract description 21
- 125000006850 spacer group Chemical group 0.000 claims description 41
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 31
- 238000010276 construction Methods 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 20
- 238000003825 pressing Methods 0.000 claims description 18
- 239000011787 zinc oxide Substances 0.000 claims description 13
- 239000007788 liquid Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 239000012528 membrane Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 238000005987 sulfurization reaction Methods 0.000 claims description 5
- 230000000694 effects Effects 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000005452 bending Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000002073 nanorod Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000006250 one-dimensional material Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H10N30/702—
Abstract
The embodiment of the invention discloses a laminated structure of a piezoelectric nanowire, which comprises a first conducting layer, a piezoelectric layer on the first conducting layer and a second conducting layer on the piezoelectric layer, wherein the piezoelectric layer comprises a stack formed by a plurality of piezoelectric nanowires; the plurality of piezoelectric nanowires are stacked to form the piezoelectric layer so as to form a self-serial connection structure of the piezoelectric nanowires; when the laminated structure is bent because of pressure, the voltage generated by the piezoelectric effect of the laminated structure is connected in series, and therefore higher voltage is output; in addition, the first conducting layer and the second conducting layer are convenient tolead out a piezoelectric signal, the piezoelectric layer is protected, and the laminated structure of a piezoelectric nanowire can be conveniently applied to manufacturing of various devices.
Description
Technical field
The present invention relates to piezoelectric device and manufacturing technology, more particularly, relate to a kind of laminated construction and manufacture method thereof of piezoelectric nano line.
Background technology
Piezoelectric is to be under pressure to make electrical potential difference can appear in the time spent between both ends of the surface crystalline material, be widely used in MEMS (Micro Electromechanical System, microelectromechanical systems) field, for example pressure, shock sensor, even microgenerator etc.
Discovering in recent years, orthotropic piezoelectric zinc oxide nano rod (or claiming zinc oxide nanowire) has piezoelectric property when being subjected to side direction external force effect bending.The cross section of zinc oxide nano rod is regular hexagon, and when nanometer rods is stressed when being bent, outwards part is stretched, and inwardly part is squeezed.Known that by piezoelectric principle stretching and pushing to produce the opposite electric field of direction, just in axial direction will produce two opposite electric fields of direction in the split both sides.Therefore, no matter to where to bending, cross section top is always positive potential, the bottom is negative potential, split is connected with growth substrates and is zero potential, the positive potential size on top, cross section is in direct ratio with the degree of nanometer rods bending, bending is more big, current potential is more high.According to research, length is about 1 micron, and diameter is outside the forward voltage drop of voltage on the Schottky diode that deduction generates owing to contact of the zinc oxide nano rod of 40 to 80 nanometers, and output voltage is between 5 to 50 microvolts, and internal resistance is about tens to hundreds of k Ω.
Yet the voltage that single nanometer rods produces is generally tens millivolts, and electric current is about a few skin peaces, and voltage and current is all too little, far is not enough to drive common electronic system.Usually, come enlarged-area by the method for nanometer stick array parallel connection, increase the nanometer rods quantity that participates in, thereby increase electric current.And increase voltage is very difficult, nanometer rods need be contacted, but the yardstick of nanometer rods is too little, and technology is difficult to do and obtains now.
Therefore, be necessary to propose a kind of have big piezoelectric voltage nanorod structure and its manufacture method.
Summary of the invention
The embodiment of the invention provides a kind of laminated construction of piezoelectric nano line, has big piezoelectric voltage, and is easy to realize.
For achieving the above object, the embodiment of the invention provides following technical scheme:
A kind of laminated construction of piezoelectric nano line comprises:
First conductive layer;
Piezoelectric layer on first conductive layer, described piezoelectric layer comprise by piling up that many piezoelectric nano lines form;
Second conductive layer on the piezoelectric layer.
Alternatively, the material of described piezoelectric nano line is zinc oxide, silicon dioxide or four oxygen sulfuration gallium.
Alternatively, the diameter of described piezoelectric nano line is 10nm-100um.
Alternatively, the length of described piezoelectric nano line is 300nm-10mm.
Alternatively, the thickness of described piezoelectric layer is 500nm-10000um.
Alternatively, the piezoelectric nano line in described the piling up is parallel to and first conductive surface arrangements basically in order or disorderly.
Alternatively, the thickness of described first conductive layer and second conductive layer is 100nm-10mm.
In addition, the present invention also provides a kind of manufacture method of laminated construction of piezoelectric nano line, comprising:
Substrate is provided;
At described substrate growth piezoelectric nano line;
The piezoelectric nano line is peeled off from substrate;
Carry out pressing after many piezoelectric nano lines are piled up, to form piezoelectric layer;
On the piezoelectric layer facing surfaces, form first conductive layer and second conductive layer respectively.
Alternatively, the step of carrying out pressing after many piezoelectric nano lines are piled up comprises:
Piezoelectric nano line after peeling off is immersed in the volatile liquid;
The volatile liquid that will comprise many piezoelectric nano lines falls on first spacer block, after the volatile liquid volatilization, second spacer block is positioned on the piezoelectric nano line;
Exert pressure from first spacer block and second spacer block and to carry out pressing, pile up the piezoelectric layer that forms to form by many piezoelectric nano lines;
Remove first spacer block and second spacer block.
Alternatively, the step of carrying out pressing after many piezoelectric nano lines are piled up comprises:
Piezoelectric nano line after peeling off is immersed in the filter liquide;
By filter membrane filter liquide is removed;
From filter membrane, the piezoelectric nano line is peeled off and the piezoelectric nano line is stacked on first spacer block, and second spacer block is positioned on the piezoelectric nano line;
Exert pressure from first spacer block and second spacer block and to carry out pressing, pile up the piezoelectric layer that forms to form by many piezoelectric nano lines;
Remove first spacer block and second spacer block.
Alternatively, the material of described piezoelectric nano line is zinc oxide, silicon dioxide or four oxygen sulfuration gallium.
Compared with prior art, technique scheme has the following advantages:
The laminated construction of the piezoelectric nano line of the embodiment of the invention; form piezoelectric layer by many piezoelectric nano lines being piled up the back; thereby formed the structure of piezoelectric nano line from series connection; when being under pressure bending, therefore the Voltage Series that its piezoelectric effect produces has exported higher voltage; in addition; first conductive layer and second conductive layer are convenient to piezoelectric signal is drawn, and have protected piezoelectric layer, are convenient to the laminated construction of piezoelectric nano line is applied to the manufacturing of various devices.
Description of drawings
Shown in accompanying drawing, above-mentioned and other purpose, feature and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing by actual size equal proportion convergent-divergent, focus on illustrating purport of the present invention.
Fig. 1 is the structural representation of the laminated construction of piezoelectric nano line of the present invention;
Fig. 2 is the schematic diagram that boosts that piles up of piezoelectric nano line;
Fig. 3 is the schematic diagram that boosts certainly of the cross section of the laminated construction of piezoelectric nano line of the present invention;
Fig. 4 is the deformed state schematic diagram according to the laminated construction of the piezoelectric nano line of the directed output voltage of the embodiment of the invention;
Fig. 5 is the deformed state schematic diagram according to the laminated construction of the piezoelectric nano line of embodiment of the invention no-output voltage;
Fig. 6 is the structural representation according to the laminated construction of the piezoelectric nano line of omnidirectional's output voltage of the embodiment of the invention.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.
A lot of details have been set forth in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here and implement, those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention is not subjected to the restriction of following public specific embodiment.
Secondly, the present invention is described in detail in conjunction with schematic diagram, when the embodiment of the invention is described in detail in detail; for ease of explanation; the profile of expression device architecture can be disobeyed general ratio and be done local the amplification, and described schematic diagram is example, and it should not limit the scope of protection of the invention at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
As the description in the background technology, the voltage that the zinc oxide nanowire of wall scroll produces is very little, is not enough to drive electronics work, and nano wire is together in series the increase output voltage in the very difficult realization of technology.In the present invention, by the piezoelectric nano line is stacked up the formation piezoelectric layer, thereby form from the stepped construction of connecting in the cross section, thereby raising output voltage, as shown in Figure 1, the schematic diagram that boosts that piles up for the piezoelectric nano line among the present invention, the ideal situation that is stacked in an orderly manner for piezoelectric nano line 101 in the legend, when 101 bendings of piezoelectric nano line, each root piezoelectric nano line 101 all is subjected to stretching and produces positive potential on axial top, the generation negative potential all is squeezed in axial bottom, owing to piezoelectric nano line 101 is stacked the axial surface of piezoelectric nano line is in contact with one another, thereby make the output voltage series connection, if the output voltage 102 of every piezoelectric nano line 101 is V, output voltage 103 series voltage nV on the cross section that piles up, thereby by this rising that has realized whole output voltage from the mode of connecting.
Based on above-mentioned principle; the present invention proposes a kind of laminated construction of piezoelectric nano line; form piezoelectric layer by many piezoelectric nano lines being piled up the back; thereby formed the structure of piezoelectric nano line from series connection; and on the upper and lower surface of piezoelectric layer, form conductive layer respectively; output voltage signal can be drawn by conductive layer, and protect piezoelectric layer, be convenient to the laminated construction of piezoelectric nano line is applied to the manufacturing of various devices.Shown in figure 2-5, the laminated construction of this piezoelectric nano line comprises:
First conductive layer 201;
Second conductive layer 203 on the piezoelectric layer 202.
In the present invention, described piezoelectric nano line also can be called the piezoelectric nano rod, and for having the nano wire of piezoelectric property material, piezoelectric can have the material of piezoelectric property for zinc oxide, silicon dioxide, four oxygen sulfuration gallium or other.Normally, nano wire or nanometer rods are limited in the nanoscale one-dimentional structure of (length without limits) diametrically for having, at present, typical nano wire is that diameter arrives hundreds of nanometers, length at several microns to tens microns or longer one-dimensional material in tens nanometers.In an embodiment of the present invention, the diameter of described piezoelectric nano line can be 10nm-100um, and the piezoelectric nano line can be 1um-10mm, perhaps other suitable dimensions.
Alternatively, between the piezoelectric nano line, also have other organic or inorganic materials, with the performance that improves this structure or the manufacturability in the technical process, for example can also have anisotropy conductiving glue, this anisotropy conductiving glue namely has bonding effect, the characteristic that only just shows conductivity at pressurized is arranged again, make between the piezoelectric nano line contact more tight.
Wherein, the piezoelectric nano line has the length of basically identical, normally the longer the better for its length, long nano wire is convenient to interweave and pile up, too short meeting causes non-level piling up and reduces the delivery efficiency of piezoelectric effect, in an embodiment of the present invention, the length of piezoelectric nano line can be 300nm-10mm, or other suitable length.
Wherein, described first conductive layer and second conductive layer can be identical or different electric conducting material, electric conducting material is monometallic material, multi-metal composite material, alloy material or conduction organic material etc. for example, described first conductive layer and second conductive layer can have identical or different thickness, and its thickness range can be 100nm-10mm.Described first conductive layer and second conductive layer are respectively formed on the piezoelectric layer facing surfaces; by this first and second conductive layer the voltage signal of piezoelectric layer is drawn; and provide physical support to piezoelectric layer; make whole piezoelectric layer moulding; be convenient to be subsequently applied to the manufacturing of various devices; also for piezoelectric layer provides protection, make it not be subjected to external pollution and damage etc.
Wherein, with reference to shown in Figure 4, described piezoelectric layer can be for arranging piling up of forming by described piezoelectric nano line basically in order.That is to say, in piezoelectric layer, the radial oriented basically identical of piezoelectric nano line 402, most at least piezoelectric nano line is arranged in parallel with first conducting surface in an orderly manner in piling up, laminated construction for this nano thread ordered arrangement, its output voltage is directed output, that is to say the deformation directional correlation of output voltage and this structure, the size of output voltage is relevant with the deformation size, the normal direction of the deformation face of this structure nano wire 402 radially with this structure undeformed the time normal plane in the time, as shown in Figure 4, this structure is output as maximum; The normal direction of the deformation face of this structure nano wire 502 radially with this structure undeformed the time the perpendicular face of normal direction in the time, as shown in Figure 5, this structure no-output, output circle that the deformation of other any positions produces is between the two, and is relevant with the direction of concrete deformation.
Wherein, the thickness that is piled up the piezoelectric layer that forms by the piezoelectric nano line is 500nm-10000um, and perhaps other suitable thickness can be determined the thickness of the piezoelectric layer that will form according to concrete design needs and manufacturing process.
With reference to shown in Figure 6, described piezoelectric layer can be piling up of being formed by the basic lack of alignment of described piezoelectric nano line, that is to say, in piezoelectric layer, the radial oriented of piezoelectric nano line 602 is mixed and disorderly, most at least piezoelectric nano line in piling up is parallel to first conductive layer disorderly and arranges, laminated construction for this nano wire lack of alignment, its output voltage is non-directional output, though nano wire is to pile up in a jumble to form piezoelectric layer, but remain contact between nano wire, still can realize the rising of overall structure output voltage by the mode of series connection certainly.For the laminated construction of this nano wire lack of alignment, its output voltage and deformation orientation independent, as shown in Figure 6.
Need to prove, for the piezoelectric nano line in the piezoelectric layer, desirable state is that whole piezoelectric nano lines all is parallel to the arrangement of first conductive layer and piles up the formation piezoelectric layer in an orderly manner, and because the restriction of manufacturing process, this perfect condition also is difficult for realizing, but most piezoelectric nano line parallel is arranged also in first conductive layer and is piled up the piezoelectric layer of formation in order or disorderly, can reach purpose of the present invention equally.
More than technical scheme and the effect of the laminated construction of piezoelectric nano line of the present invention is described in detail, in addition, the present invention also provides the manufacture method of said structure, this method comprises:
Substrate is provided;
At described substrate growth piezoelectric nano line;
The piezoelectric nano line is peeled off from substrate;
Carry out pressing after many piezoelectric nano lines are piled up, to form piezoelectric layer;
On the piezoelectric layer facing surfaces, form first conductive layer and second conductive layer respectively.
In order to understand the present invention better, below will be described in detail according to the flow process of this manufacture method manufacture process to specific embodiment.
At step S01, provide substrate.
In this embodiment, provide silicon substrate, described silicon substrate is the substrate that is used to form the piezoelectric nano line, and described silicon substrate had carried out operations in earlier stage such as clean.
At step S102, at described substrate growth piezoelectric nano line.
Can form other required piezoelectric nano lines by any suitable method.
In this embodiment, adopt evaporation at the nano wire of silicon substrate formation zinc oxide, the length basically identical of the nano wire of zinc oxide, in this embodiment, length can be 10um-100um.
At step S103, the piezoelectric nano line is peeled off from substrate.
In this embodiment, the nano wire with zinc oxide scrapes from silicon substrate.
At step S104, carry out pressing after many piezoelectric nano lines are piled up, to form piezoelectric layer.
Particularly, make piezoelectric layer by volatility process in one embodiment, particularly:
At first, the piezoelectric nano line after peeling off is immersed in the volatile liquid.
In this embodiment, the nano wire of the zinc oxide that scrapes is immersed in volatile liquid but does not dissolve in the liquid of zinc oxide, for example alcohol.
Then, the volatile liquid that will comprise many piezoelectric nano lines falls on first spacer block, and the piezoelectric nano line is stacked, and after the volatile liquid volatilization, second spacer block is positioned on the piling up of piezoelectric nano line.
Described first and second spacer blocks are used for supporting the substrate that piles up of many piezoelectric nano lines, and are used for the liner of follow-up process for pressing.In this embodiment, described first and second spacer blocks are silicon chip, and zinc oxide nanowire is stacked on first spacer block mussily, and second spacer block covers on the zinc oxide nanowire.
Then, exert pressure from first spacer block and second spacer block and to carry out pressing, pile up the piezoelectric layer that forms to form by many piezoelectric nano lines.
Alternatively, in this step, can also adopt filtration method to make this piezoelectric layer, particularly:
At first, the piezoelectric nano line after peeling off is immersed in the filter liquide, filter liquide is water for example, and the piezoelectric nano line is zinc oxide nanowire for example.
Then, by filter membrane filter liquide is removed, like this, the piezoelectric nano line has been stacked on the filter membrane.
Then, the piezoelectric nano line is peeled off and the piezoelectric nano line is stacked on first spacer block from filter membrane, and second spacer block is positioned on the piezoelectric nano line, first and second spacer blocks are silicon chip for example.
Then, with the making step of volatility process, exert pressure from first spacer block and second spacer block and to carry out pressing, pile up the piezoelectric layer that forms to form by many piezoelectric nano lines, and remove first spacer block and second spacer block.
In this embodiment, said structure can be positioned over and be pressed into membrane process in the high-tension apparatus, the piling up closely of piezoelectric nano line after the pressing integrates, and forms the piezoelectric nano line and piles up the piezoelectric layer that forms.As required, in process for pressing, the operation that can also vacuumize or heat is to carry out pressing better.
Then, remove first spacer block and second spacer block.
At step S105, on the piezoelectric layer facing surfaces, form first conductive layer and second conductive layer respectively.
In this embodiment, can carry out the two sides metal sputtering to above-mentioned piezoelectric layer, two surfaces relative at piezoelectric layer plate metal, thereby form first and second conductive layers.
So far, formed the laminated construction of the piezoelectric nano line of the embodiment of the invention.
Be preferred embodiment of the present invention more than, the present invention is not limited to this.
Though the present invention discloses as above with preferred embodiment, yet is not in order to limit the present invention.Any those of ordinary skill in the art, do not breaking away under the technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention according to any simple modification, equivalent variations and the modification that technical spirit of the present invention is done above embodiment, all still belongs in the scope of technical solution of the present invention protection.
Claims (10)
1. the laminated construction of a piezoelectric nano line is characterized in that, comprising:
First conductive layer;
Piezoelectric layer on first conductive layer, described piezoelectric layer comprise by piling up that many piezoelectric nano lines form;
Second conductive layer on the piezoelectric layer.
2. laminated construction according to claim 1 is characterized in that, the material of described piezoelectric nano line is zinc oxide, silicon dioxide or four oxygen sulfuration gallium.
3. laminated construction according to claim 1 is characterized in that, the diameter of described piezoelectric nano line is 10nm-100um.
4. laminated construction according to claim 1 is characterized in that, the length of described piezoelectric nano line is 300nm-10mm.
5. laminated construction according to claim 1 is characterized in that, the thickness of described piezoelectric layer is 500nm-10000um.
6. laminated construction according to claim 1 is characterized in that, the thickness of described first conductive layer and second conductive layer is 100nm-10mm.
7. the manufacture method of the laminated construction of a piezoelectric nano line is characterized in that, comprising:
Substrate is provided;
At described substrate growth piezoelectric nano line;
Many piezoelectric nano lines are peeled off from substrate;
Carry out pressing after many piezoelectric nano lines are piled up, to form piezoelectric layer;
On the piezoelectric layer facing surfaces, form first conductive layer and second conductive layer respectively.
8. method according to claim 7 is characterized in that, the step of carrying out pressing after many piezoelectric nano lines are piled up comprises:
Piezoelectric nano line after peeling off is immersed in the volatile liquid;
The volatile liquid that will comprise many piezoelectric nano lines falls on first spacer block, after the volatile liquid volatilization, second spacer block is positioned on the piezoelectric nano line;
Exert pressure from first spacer block and second spacer block and to carry out pressing, pile up the piezoelectric layer that forms to form by many piezoelectric nano lines;
Remove first spacer block and second spacer block;
Wherein, described volatile liquid does not dissolve described piezoelectric nano line.
9. method according to claim 7 is characterized in that, the step of carrying out pressing after many piezoelectric nano lines are piled up comprises:
Piezoelectric nano line after peeling off is immersed in the filter liquide;
By filter membrane filter liquide is removed;
From filter membrane, the piezoelectric nano line is peeled off and the piezoelectric nano line is stacked on first spacer block, and second spacer block is positioned on the piezoelectric nano line;
Exert pressure from first spacer block and second spacer block and to carry out pressing, pile up the piezoelectric layer that forms to form by many piezoelectric nano lines;
Remove first spacer block and second spacer block.
10. method according to claim 7 is characterized in that, the material of described piezoelectric nano line is zinc oxide, silicon dioxide or four oxygen sulfuration gallium.
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| CN201110404235.3A CN102522493B (en) | 2011-12-07 | 2011-12-07 | Laminated structure of piezoelectric nanowire and manufacturing method thereof |
| PCT/CN2011/083804 WO2013082823A1 (en) | 2011-12-07 | 2011-12-12 | Laminated structure of piezoelectric nanowire and manufacturing method therefore |
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| WO1998024296A2 (en) * | 1996-11-20 | 1998-06-11 | The Regents Of The University Of California | Multilaminate piezoelectric high voltage stack |
| CN101294844B (en) * | 2007-04-23 | 2015-07-22 | 成都锐华光电技术有限责任公司 | Bending piezo-electricity type zinc oxide nano stick micromotor(MEMS) vibration transducer |
| US7936111B2 (en) * | 2008-08-07 | 2011-05-03 | Samsung Electronics Co., Ltd. | Apparatus for generating electrical energy and method for manufacturing the same |
| US8310134B2 (en) * | 2009-01-22 | 2012-11-13 | William Marsh Rice University | Composition for energy generator, storage, and strain sensor and methods of use thereof |
| US8344597B2 (en) * | 2009-10-22 | 2013-01-01 | Lawrence Livermore National Security, Llc | Matrix-assisted energy conversion in nanostructured piezoelectric arrays |
| US8623451B2 (en) * | 2009-11-10 | 2014-01-07 | Georgia Tech Research Corporation | Large-scale lateral nanowire arrays nanogenerators |
| CN101859731B (en) * | 2010-05-07 | 2012-08-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for manufacturing nano-wire piezoelectric device |
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