CN102522358B - The degumming process chamber of semi-conductor silicon chip and method of removing photoresist - Google Patents
The degumming process chamber of semi-conductor silicon chip and method of removing photoresist Download PDFInfo
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- CN102522358B CN102522358B CN201110457977.2A CN201110457977A CN102522358B CN 102522358 B CN102522358 B CN 102522358B CN 201110457977 A CN201110457977 A CN 201110457977A CN 102522358 B CN102522358 B CN 102522358B
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Abstract
The invention provides a kind of degumming process chamber of semi-conductor silicon chip, one end of process cavity inside has the bottom platform of carrying silicon chip, the surrounding of bottom platform is uniformly distributed multiple lifting column, lifting column top is provided with telescopic element, the other end of process cavity inside is fixed with a guard shield, in guard shield, there is plasma producing apparatus, process cavity inside also has rotation platform and removable cover, for fixing silicon chip above rotation platform, rotation platform can move up and down, rotation platform and guard shield can form enclosed construction, removable cover can be placed in the top of bottom platform, and can silicon chip be blocked, removable cover has one or more import.The present invention also provides a kind of method of removing photoresist of semi-conductor silicon chip.The degumming process chamber of semi-conductor silicon chip provided by the invention and method of removing photoresist, enable two panels silicon chip carry out dry process and wet processing simultaneously, drastically increase production efficiency.
Description
Technical field
The present invention relates to integrated circuit processing technique field, be specifically related to a kind of degumming process chamber of semi-conductor silicon chip and method of removing photoresist.
Background technology
With the continuous progress of integrated circuit fabrication process, the volume of semiconductor device is just becoming more and more less, and this result also in very small particle and also becomes the manufacture and performance that are enough to affect semiconductor device, so silicon wafer cleaning process also becomes more and more important.
In all cleaning steps, due to the duricrust injected or etching technics makes formation one deck in photoresist surface be carbonized, be difficult to be removed by the wet-cleaned mode of routine, the photoresist lift off after therefore removing etching or heavy dose of ion implantation is a step of difficulty the most.Conventional method first uses oxygen plasma to process photoresist, re-uses wet clean process and remove residual photoresist.For 130 nanometers and above process bands, dry method is removed photoresist and time interval between wet-cleaned all can control within one day usually, but along with the progress of technology, increasing new material is used for the formation of copper interconnection technology dielectric layer, compare with original materials silicon dioxide, these new materials have better electric property, but also bring larger challenge to the cleaning technique that removes photoresist simultaneously.For 22/32 nanometer technology band, dry method is removed photoresist and the interval time of wet-cleaned must remain in the very short time.Therefore, dry method is removed photoresist and wet-cleaned be integrated on same main frame, within the interval time of two-step process can being shortened to a few minutes.
At present, dry method is removed photoresist and is integrated in same process cavity with wet-cleaned, further the interval time of two-step process can be shortened to level second, but for a silicon chip, carrying out carrying out wet-cleaned again, when carrying out wet clean process after dry method is removed photoresist, dry method degumming process device leaves unused, and when carrying out dry method degumming process, wet clean process is left unused, unfavorable production efficiency.
Summary of the invention
The object of the invention is to propose a kind of degumming process chamber of semi-conductor silicon chip and method of removing photoresist, in same process cavity, dry method to be removed photoresist and problem that wet-cleaned is effectively combined to solve.
To achieve these goals, the invention provides a kind of degumming process chamber of semi-conductor silicon chip, one end of described process cavity inside has the bottom platform of carrying silicon chip, described bottom platform edge be circumferentially uniformly distributed multiple lifting column, described lifting column top is provided with telescopic element, the other end of described process cavity inside is fixed with a guard shield, in described guard shield, there is plasma producing apparatus, described process cavity inside also has rotation platform and removable cover, for fixing described silicon chip above described rotation platform, described rotation platform can move up and down, described rotation platform and described guard shield can form enclosed construction, described removable cover can be placed in the top of described bottom platform, and described silicon chip can be blocked, described removable cover has one or more import.
Preferably, in the degumming process chamber of described semi-conductor silicon chip, the quantity of described lifting column is two.
Preferably, in the degumming process chamber of described semi-conductor silicon chip, described telescopic element is telescopic silicon-wafer holder.
Preferably, in the degumming process chamber of described semi-conductor silicon chip, described plasma producing apparatus comprises air inlet pipeline, vacuum line, exhaust pipe and coil, described coil is arranged around described guard shield madial wall, and described air inlet pipeline, vacuum line and exhaust pipe are arranged through the sidewall of described guard shield.
Preferably, in the degumming process chamber of described semi-conductor silicon chip, described guard shield is metal skirt.
Preferably, in the degumming process chamber of described semi-conductor silicon chip, described bottom platform is identical with the diameter of described rotation platform.
Preferably, in the degumming process chamber of described semi-conductor silicon chip, when above described removable cover is positioned at described silicon chip, there is between described removable cover and silicon chip the distance of 0.5 millimeter to 3 millimeters.
Preferably, in the degumming process chamber of described semi-conductor silicon chip, described import comprises liquid-inlet, and described liquid-inlet is connected with liquid line, is 0.035-0.35Mpa by the pressure of the cleaning fluid of described liquid-inlet.
Preferably, in the degumming process chamber of described semi-conductor silicon chip, described removable cover also has one or more gas feed, and described gas feed is connected with gas piping.
Preferably, in the degumming process chamber of described semi-conductor silicon chip, the edge of described removable cover is bent downwardly, and forms water conservancy diversion guard shield.
Present invention also offers a kind of method of removing photoresist of degumming process chamber of semi-conductor silicon chip, this method of removing photoresist comprises: screwed out by rotation platform and make silicon chip be fixed on described rotation platform; Described rotation platform rising forms enclosed construction with the guard shield in process cavity; Start the plasma producing apparatus in described guard shield, in described enclosed construction, plasma ash process is carried out to described silicon chip; After completing described plasma ash process, described rotation platform declines, and risen to by described multiple lifting column and described rotation platform same level position, the telescopic element of described lifting column stretches out fixing described silicon chip; Described rotation platform precession, described lifting column declines, and after described silicon chip is placed into described bottom platform, described telescopic element is regained, and described lifting column drops to the below being positioned at described bottom platform further; Removable cover in process cavity is moved to the top of described bottom platform; Cleaning fluid flows on described silicon chip by the import on described removable cover, wet-cleaned is carried out to described silicon chip, while wet-cleaned is carried out to described silicon chip, rotation platform is screwed out again and makes another one silicon chip be fixed on described rotation platform, repeat above-mentioned steps.
Preferably, remove photoresist in method at described semi-conductor silicon chip, by exterior mechanical arm, described silicon chip is fixed on described rotation platform.
Preferably, remove photoresist in method at described semi-conductor silicon chip, described rotation platform can move up and down, and when described rotation platform moves up, the guard shield in described rotation platform and process cavity forms enclosed construction.
Preferably, remove photoresist in method at described semi-conductor silicon chip, described plasma producing apparatus comprises air inlet pipeline, vacuum line, exhaust pipe and coil, by described air inlet pipeline and described vacuum line, the pressure limit in described enclosed construction is adjusted to 10 millitorr ~ 2000 millitorrs, oxygen is passed in described enclosed construction, and the signal of 13.56 megahertzes is at least to described coil incoming frequency, excite oxygen plasma to carry out Oxygen plasma ashing technique to described silicon chip.
Preferably, remove photoresist in method at described semi-conductor silicon chip, described removable cover also has one or more gas feed, and described gas feed is connected with gas piping, and IPA vapor or nitrogen are sprayed onto the surface of described silicon chip by described gas piping.
Preferably, remove photoresist in method at described semi-conductor silicon chip, the removable cover in process cavity is moved to the top of described bottom platform, make the distance between described removable cover and described silicon chip with 0.5 millimeter to 3 millimeters.
Compared with prior art, the degumming process chamber of semi-conductor silicon chip provided by the invention, by being arranged on the lifting column in process cavity, the silicon chip having carried out plasma ash process is transported to bottom platform from described enclosed construction and carries out wet-cleaned, while cleaning is carried out to described silicon chip, plasma ash process can be carried out to another silicon chip in enclosed construction, enable two panels silicon chip carry out dry process and wet processing simultaneously, drastically increase production efficiency.
The method of removing photoresist of semi-conductor silicon chip provided by the invention, lifting column rises and uses its telescopic element to fix silicon chip, the silicon chip of plasma ashing process is declined along with lifting column, wet-cleaned is carried out to bottom platform, and while wet-cleaned is carried out to silicon chip, the enclosed construction carrying out plasma ash process enters another silicon chip and carries out dry process, the enclosed construction carrying out dry process is utilized with the state space carrying out wet-cleaned simultaneously, contributes to improving production efficiency.
Accompanying drawing explanation
Figure 1 shows that the degumming process cavity configuration generalized section of the semi-conductor silicon chip of present pre-ferred embodiments;
Figure 2 shows that the degumming process chamber plan structure generalized section of the semi-conductor silicon chip of present pre-ferred embodiments;
Figure 3 shows that the flow chart of steps of the method for removing photoresist of the semi-conductor silicon chip of present pre-ferred embodiments;
Figure 4 shows that the process cavity structural profile schematic diagram of the semi-conductor silicon chip of present pre-ferred embodiments when carrying out plasma ash process;
Figure 5 shows that process cavity structural profile schematic diagram when present pre-ferred embodiments carries out plasma ash process and wet clean process simultaneously.
Embodiment
Below in conjunction with the drawings and specific embodiments, the degumming process chamber of the semi-conductor silicon chip that the present invention proposes and the method for removing photoresist are described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only for object that is convenient, the aid illustration embodiment of the present invention lucidly.
Please refer to Fig. 1, Fig. 2, Figure 1 shows that the degumming process cavity configuration generalized section of the semi-conductor silicon chip of present pre-ferred embodiments; Figure 2 shows that the degumming process chamber plan structure generalized section of the semi-conductor silicon chip of present pre-ferred embodiments.The invention provides a kind of degumming process chamber of semi-conductor silicon chip, one end of described process cavity 10 inside has the bottom platform 12 of carrying silicon chip 14, the surrounding of described bottom platform 12 is uniformly distributed multiple lifting column 11, described lifting column 11 top is provided with telescopic element 11a, the other end of described process cavity 10 inside is fixed with a guard shield 13, in described guard shield 13, there is plasma producing apparatus, described process cavity 10 inside also has rotation platform 16 and removable cover 15, for fixing described silicon chip 14 above described rotation platform 16, described rotation platform 16 can move up and down, described rotation platform 16 and described guard shield 13 can form enclosed construction, described removable cover 15 can be placed in the top of described bottom platform 12, and described silicon chip 14 can be blocked, described removable cover 15 has one or more import.
In the present embodiment, the quantity of lifting column 11 is two, telescopic element 11a is telescopic silicon-wafer holder, will be understood by those skilled in the art that the quantity of described lifting column 11 is not only only two, also can be other quantity, telescopic element 11a is also not only only telescopic silicon-wafer holder, can also be that other can be used for fixing the medium of silicon chip 14.
In the present embodiment, described plasma producing apparatus comprises air inlet pipeline 171, vacuum line 172, exhaust pipe 173 and coil 174, described coil 174 is arranged around described guard shield 13 madial wall, and described air inlet pipeline 171, vacuum line 172 and exhaust pipe 173 is arranged through the sidewall of described guard shield 13.Will be understood by those skilled in the art that, described plasma producing apparatus is not only made up of said elements, and the element that can also can produce plasma by other forms.Further, described guard shield 13 is metal skirt.
Further, when above described removable cover 15 is positioned at described silicon chip 14, there is between described removable cover 15 and silicon chip 14 distance of 0.5 millimeter to 3 millimeters.In the present embodiment, the spacing between silicon chip 14 surface and removable cover 15 is 2 millimeters.The minimum distance had between described removable cover 15 and silicon chip 14, silicon chip 14 surface in whole cleaning process is made all to be closed in a minimum space, effectively prevent the suspended particulate in process cavity and the globule to be again infected with silicon chip 14 surface, can also effectively reduce cleaning fluid consumption simultaneously.Described import is liquid-inlet, and described liquid-inlet is connected with liquid line 18a, is 0.035-0.35Mpa by the pressure of the cleaning fluid of described liquid-inlet.In the present embodiment, the force value of cleaning fluid is 0.35Mpa.Liquid line 18a provide cleaning fluid, make cleaning fluid be sprayed onto silicon chip 14 surface to be cleaned by described liquid-inlet, regulate the pressure of the cleaning fluid by liquid-inlet, cleaning fluid can be made to form very high speed on silicon chip 14 surface, thus reduction boundary layer thickness, improve cleaning performance.
In the present embodiment, described removable cover 15 also has one or more gas feed, described gas feed is connected with gas piping 18b, gas piping 18b provides high pure nitrogen or IPA vapor, make it be sprayed onto by gas feed and clean complete silicon chip 14 surface, the high pure nitrogen provided or IPA vapor can help silicon chip 14 rapid draing.
In the present embodiment, described bottom platform 12 is identical with the diameter of described rotation platform 16, all can place same silicon chip 14 to make bottom platform 12 and rotation platform 16.
Preferably, described bottom platform 12 and described rotation platform 16 are provided with silicon-wafer holder (not shown) for fixing described silicon chip 14.The inside of described silicon-wafer holder is distributed with vacuum line, and described vacuum line can provide vacuum environment, and the absorption affinity utilizing vacuum to produce fixes the silicon chip 14 on silicon-wafer holder, and the method for this fixing silicon chip neither damages silicon chip 14, does not take up room again.
Preferably, described removable cover 15 is provided with ultrasonic oscillator, the quantity of described ultrasonic oscillator is one to four, in the present embodiment, corresponding silicon chip 14 is provided with two ultrasonic oscillators, the power of each ultrasonic oscillator is for arriving silicon chip 14 surface 0.5 to 5 Watts per square centimeter, and operating frequency is 0.2 to 3 megahertz.Will be understood by those skilled in the art that, be not only confined to be provided with ultrasonic oscillator in described process cavity, can also be that other can produce hyperacoustic instrument.
Further, the edge of described removable cover 15 is bent downwardly, and forms water conservancy diversion guard shield 19, avoids cleaning fluid to spill the edge of removable cover 15, can utilize cleaning fluid more expeditiously.The exhaust outlet pipeline (not shown) of described process cavity is arranged on the below of described bottom platform 12.
Particularly, process cavity 10 comprises the import 101 of process cavity and the outlet 102 of process cavity, and silicon chip 14 is sent in process cavity 10 by the import 101 of process cavity, sends process cavity 10 by the outlet 102 of process cavity.
Figure 3 shows that the flow chart of steps of the method for removing photoresist of the semi-conductor silicon chip of present pre-ferred embodiments.With reference to Fig. 3, the method for removing photoresist of the semi-conductor silicon chip that the embodiment of the present invention provides, comprising:
S31, by rotation platform screw out make silicon chip be fixed on described rotation platform;
The rising of S32, described rotation platform forms enclosed construction with the guard shield in process cavity;
S33, the plasma producing apparatus started in described guard shield, carry out plasma ash process to described silicon chip in described enclosed construction;
S34, complete described plasma ash process after, described rotation platform declines, and risen to by described multiple lifting column and described rotation platform same level position, the telescopic element of described lifting column stretches out fixing described silicon chip;
S35, described rotation platform precession, described lifting column declines, and after described silicon chip is placed into described bottom platform, described telescopic element is regained, and described lifting column drops to the below being positioned at described bottom platform further;
S36, the removable cover in process cavity is moved to the top of described bottom platform;
S37, cleaning fluid flow on described silicon chip by the import on described removable cover, wet-cleaned is carried out to described silicon chip, while wet-cleaned is carried out to described silicon chip, rotation platform is screwed out again and makes another one silicon chip be fixed on described rotation platform, repeat above-mentioned steps.
Figure 4 shows that the process cavity structural profile schematic diagram of the semi-conductor silicon chip of present pre-ferred embodiments when carrying out plasma ash process.With reference to Fig. 4, first plasma ash process is carried out to silicon chip 14, what carry out in the present embodiment is Oxygen plasma ashing technique, particularly, rotation platform 16 is screwed out, in the present embodiment, described rotation platform 16 screws out 90 ° along vertical plane, until described rotation platform 16 is horizontal and is positioned at immediately below metal skirt, it should be understood by one skilled in the art that described rotation platform 16 not only screws out along vertical plane, can also screw out to metal skirt along horizontal plane according to the set-up mode of rotation platform 16.By exterior mechanical arm, described silicon chip 14 is placed on described rotation platform 16 by the import 101 of process cavity 10, and by the vacuum line of silicon-wafer holder that rotation platform 16 is arranged described silicon chip 14 is fixed on the described rotation platform 16 in process cavity 10.Rotation platform 16 can move up and down, rotation platform 16 is risen to and forms an enclosed construction with metal skirt, and namely silicon chip 14 is in the enclosed space of enclosed construction, afterwards, by described air inlet pipeline 171 and described vacuum line 172, the pressure limit in described enclosed construction is adjusted to 10 millitorr ~ 2000 millitorrs, oxygen is passed in described enclosed construction, and the signal of 13.56 megahertzes is at least to described coil 174 incoming frequency, this frequency signal excites oxygen plasma to carry out Oxygen plasma ashing technique to described silicon chip 14, the waste gas produced under these process conditions discharges enclosed construction by exhaust pipe 173.
After completing described plasma ash process, described rotation platform 16 declines, described multiple lifting column 11 is risen to and described rotation platform 16 same level position, the telescopic element 11a of described lifting column 11 stretches out fixing described silicon chip 14, after Oxygen plasma ashing technique has been carried out to silicon chip 14, wet-cleaned is carried out to silicon chip 14, the precession of described rotation platform 16, described lifting column 11 declines, after described silicon chip 14 being placed into described bottom platform 12, described telescopic element 11a regains, described lifting column 11 drops to the below being positioned at described bottom platform further.Figure 5 shows that process cavity structural profile schematic diagram when present pre-ferred embodiments carries out plasma ash process and wet clean process simultaneously.With reference to Fig. 5, removable cover 15 in process cavity is moved to the top of described bottom platform 12, the diameter of described bottom platform 12 is 10 inches to 15 inches, the diameter of bottom platform 12 is identical with the diameter of rotation platform 16, the diameter of the metal skirt corresponding with described rotation platform 16 is also 10 inches to 15 inches, the material of described removable cover 15 is pottery, diameter is 10 to 15 inches, thickness is 1 to 20 millimeter, in the present embodiment, the diameter of described bottom platform 12 is 10 inches, and the diameter of removable cover 15 is 12 inches, will be understood by those skilled in the art that, the material of described removable cover 15 is not only limited as pottery, can also be other stable chemical performance, meet the material of certain requirement of mechanical strength.
In the degumming process chamber of the semi-conductor silicon chip provided utilizing embodiments of the invention is cleaned, make the spacing keeping 2 millimeters between silicon chip 14 surface and removable cover 15, bottom platform 12 drives silicon chip 14 to start to rotate, its maximum speed is 500 to 3000 rpms, and higher rotating speed contributes to making cleaning fluid form very high speed on silicon chip 14 surface.In the present embodiment, the rotating speed of bottom platform 12 is 2000 rpms.Cleaning fluid is sprayed onto silicon chip 14 surface with the pressure of 0.35Mpa by the liquid-inlet on removable cover 15, before startup bottom platform 12 rotates, opens ultrasonic oscillator, and the ultrasonic wave silicon chip making it produce carries out auxiliary cleaning, and then improves process efficiency; After cleaning fluid cleaning, stop cleaning fluid supply, change pure water rinsing into.After having cleaned, stop spraying pure water, close ultrasonic oscillator simultaneously, gas piping 18b provides high pure nitrogen or IPA vapor, make it be sprayed onto by gas feed and clean complete silicon chip 14 surface, the high pure nitrogen provided or IPA vapor can help silicon chip 14 rapid draing.After silicon chip 14 drying completes, bottom platform 12 stops operating and falls, and outside robotic arm takes out silicon chip 14 by the outlet 102 of process cavity 10.While wet-cleaned is carried out to above-mentioned silicon chip 14, rotation platform 16 is screwed out again, another silicon chip 14 ' is fixed on described rotation platform 16 and carries out plasma ash process, like this, there is two panels silicon chip to carry out dry process and wet processing simultaneously, when the silicon chip 14 completing wet processing is removed after outside process cavity 10, another silicon chip 14 ' dry process completes, enter just emptied wet clean process space out, so constantly cycling, the enclosed construction carrying out dry process is utilized with the state space carrying out wet-cleaned simultaneously, contribute to improving production efficiency
In sum, the degumming process chamber of semi-conductor silicon chip provided by the invention and method of removing photoresist, by being arranged on the lifting column in process cavity, the silicon chip having carried out plasma ash process is transported to bottom platform from described enclosed construction and carries out wet-cleaned, while cleaning is carried out to described silicon chip, plasma ash process can be carried out to another silicon chip in enclosed construction, enable two panels silicon chip carry out dry process and wet processing simultaneously, drastically increase production efficiency.
Although the present invention with preferred embodiment disclose as above, so itself and be not used to limit the present invention.Persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is when being as the criterion depending on those as defined in claim.
Claims (16)
1. the degumming process chamber of a semi-conductor silicon chip, it is characterized in that, one end of described process cavity inside has the bottom platform of carrying silicon chip, described bottom platform edge be circumferentially uniformly distributed multiple lifting column, described lifting column top is provided with telescopic element, the other end of described process cavity inside is fixed with a guard shield, in described guard shield, there is plasma producing apparatus, described process cavity inside also has rotation platform and removable cover, for fixing described silicon chip above described rotation platform, described rotation platform can move up and down, described rotation platform and described guard shield can form enclosed construction, described removable cover can be placed in the top of described bottom platform, and described silicon chip can be blocked, described removable cover has one or more import.
2. the degumming process chamber of semi-conductor silicon chip according to claim 1, is characterized in that, the quantity of described lifting column is two.
3. the degumming process chamber of semi-conductor silicon chip according to claim 1, is characterized in that, described telescopic element is telescopic silicon-wafer holder.
4. the degumming process chamber of semi-conductor silicon chip according to claim 1, it is characterized in that, described plasma producing apparatus comprises air inlet pipeline, vacuum line, exhaust pipe and coil, described coil is arranged around described guard shield madial wall, and described air inlet pipeline, vacuum line and exhaust pipe are arranged through the sidewall of described guard shield.
5. the degumming process chamber of semi-conductor silicon chip according to claim 1, is characterized in that, described guard shield is metal skirt.
6. the degumming process chamber of semi-conductor silicon chip according to claim 1, is characterized in that, described bottom platform is identical with the diameter of described rotation platform.
7. the degumming process chamber of semi-conductor silicon chip according to claim 1, is characterized in that, when above described removable cover is positioned at described silicon chip, has the distance of 0.5 millimeter to 3 millimeters between described removable cover and silicon chip.
8. the degumming process chamber of semi-conductor silicon chip according to claim 1, is characterized in that, described import comprises liquid-inlet, and described liquid-inlet is connected with liquid line, is 0.035-0.35Mpa by the pressure of the cleaning fluid of described liquid-inlet.
9. the degumming process chamber of semi-conductor silicon chip according to claim 8, is characterized in that, described removable cover also has one or more gas feed, and described gas feed is connected with gas piping.
10. the degumming process chamber of the described semi-conductor silicon chip any one of claim 1 to 9, is characterized in that, the edge of described removable cover is bent downwardly, and forms water conservancy diversion guard shield.
11. 1 kinds of methods of removing photoresist utilizing the degumming process chamber of the semi-conductor silicon chip described in claim 1, is characterized in that, comprising:
Being screwed out by rotation platform makes silicon chip be fixed on described rotation platform;
Described rotation platform rising forms enclosed construction with the guard shield in process cavity;
Start the plasma producing apparatus in described guard shield, in described enclosed construction, plasma ash process is carried out to described silicon chip;
After completing described plasma ash process, described rotation platform declines, and risen to by described multiple lifting column and described rotation platform same level position, the telescopic element of described lifting column stretches out fixing described silicon chip;
Described rotation platform precession, described lifting column declines, and after described silicon chip is placed into described bottom platform, described telescopic element is regained, and described lifting column drops to the below being positioned at described bottom platform further;
Removable cover in process cavity is moved to the top of described bottom platform;
Cleaning fluid flows on described silicon chip by the import on described removable cover, wet-cleaned is carried out to described silicon chip, while wet-cleaned is carried out to described silicon chip, rotation platform is screwed out again and makes another one silicon chip be fixed on described rotation platform, repeat above-mentioned steps.
12. 1 kinds are utilized the method for removing photoresist described in claim 11, it is characterized in that, are fixed on described rotation platform by described silicon chip by exterior mechanical arm.
13. 1 kinds utilize the method for removing photoresist described in claim 11, it is characterized in that, described rotation platform can move up and down, and when described rotation platform moves up, the guard shield in described rotation platform and process cavity forms enclosed construction.
14. 1 kinds utilize the method for removing photoresist described in claim 11, it is characterized in that, described plasma producing apparatus comprises air inlet pipeline, vacuum line, exhaust pipe and coil, by described air inlet pipeline and described vacuum line, the pressure limit in described enclosed construction is adjusted to 10 millitorr ~ 2000 millitorrs, oxygen is passed in described enclosed construction, and the signal of 13.56 megahertzes is at least to described coil incoming frequency, excite oxygen plasma to carry out Oxygen plasma ashing technique to described silicon chip.
15. 1 kinds utilize the method for removing photoresist described in claim 11, it is characterized in that, described removable cover also has one or more gas feed, and described gas feed is connected with gas piping, and IPA vapor or nitrogen are sprayed onto the surface of described silicon chip by described gas piping.
16. utilize the method for removing photoresist described in claim 11, it is characterized in that, the removable cover in process cavity is moved to the top of described bottom platform, make the distance between described removable cover and described silicon chip with 0.5 millimeter to 3 millimeters.
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| CN108580445A (en) * | 2018-06-29 | 2018-09-28 | 东莞塔菲尔新能源科技有限公司 | A kind of cleaning device and cleaning method of power battery head cover |
| CN115167288B (en) * | 2022-09-08 | 2022-12-20 | 深圳市世宗自动化设备有限公司 | Pressure self-adaptive glue scraping method and system |
| CN116251803B (en) * | 2023-04-12 | 2023-09-22 | 东莞市晟鼎精密仪器有限公司 | Graphite boat cleaning equipment for cleaning silicon nitride coating based on microwave plasma dry method |
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| CN102005367A (en) * | 2010-09-10 | 2011-04-06 | 上海集成电路研发中心有限公司 | Semiconductor silicon wafer cleaning process cavity and cleaning method |
| CN202006190U (en) * | 2011-03-17 | 2011-10-12 | 上海集成电路研发中心有限公司 | Process cavity for cleaning semiconductor silicon wafer |
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| AU2001247226A1 (en) * | 2000-03-20 | 2001-10-03 | Tokyo Electron Limited | High speed stripping for damaged photoresist |
| JP2009094115A (en) * | 2007-10-04 | 2009-04-30 | Hitachi Kokusai Electric Inc | Production process of semiconductor device |
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| CN102005367A (en) * | 2010-09-10 | 2011-04-06 | 上海集成电路研发中心有限公司 | Semiconductor silicon wafer cleaning process cavity and cleaning method |
| CN202006190U (en) * | 2011-03-17 | 2011-10-12 | 上海集成电路研发中心有限公司 | Process cavity for cleaning semiconductor silicon wafer |
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