CN102520212B - Device for thinning multi-layer material and method for thinning to-be-detected sample - Google Patents
Device for thinning multi-layer material and method for thinning to-be-detected sample Download PDFInfo
- Publication number
- CN102520212B CN102520212B CN 201110416216 CN201110416216A CN102520212B CN 102520212 B CN102520212 B CN 102520212B CN 201110416216 CN201110416216 CN 201110416216 CN 201110416216 A CN201110416216 A CN 201110416216A CN 102520212 B CN102520212 B CN 102520212B
- Authority
- CN
- China
- Prior art keywords
- conducting probe
- testing sample
- exposed surface
- ground floor
- attenuate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The invention provides a device for thinning a multi-layer material and a method for thinning a to-be-detected sample, belonging to the field of testing of semiconductors. The device comprises a reaction chamber, an atomic force microscope, an electron microscope and a sample table. The sample table, the atomic force microscope and the electron microscope are positioned in the reaction chamber. The method for thinning the to-be-detected sample comprises the following steps of: putting a sample in the reaction chamber; measuring first contact potential difference V1 of a first bared surface of the to-be-detected sample; moving away a conducting probe of the atomic force microscope; etching the first bared surface at the depth X to expose a second surface; measuring first contact potential difference V2 of a second bared surface of the to-be-detected sample; and comparing the V1 with the V2 to judge whether to etch continuously. The device and the method disclosed by the invention are used for solving the problem of being incapable of precisely dissecting in the prior art. The device and the method are capable of precisely dissecting hetero-junction devices and have important meanings on preparation and property research of semiconductor devices.
Description
Technical field
The present invention relates to the semiconducter device testing field, relate in particular to a kind of precise anatomical of heterojunction device.
Background technology
For for the heterogeneous semiconductor junction devices such as efficient multi-node solar battery and LED, often comprise several and even dozens of heterojunction layer in its device architecture, realize the device functions such as opto-electronic conversion by these heterogeneous interfaces.The character of every one deck comprises that bed thickness, composition and doping content are all different, and has influence on the overall performance of device.For the character of each layer of test analysis, usually must dissect by the device that growth is good, make the layer exposed surface that will measure, successively to measure its parameter, or make cross-sectional slices, the methods such as employing transmission electron microscope are observed.
A kind of method of the heterogeneous lamination of precise anatomical is to adopt the focused-ion-beam lithography method, adopts the ion beam bombardment sample surfaces of certain accelerating potential and line, thereby produces the etching of sample surfaces.The bundle spot of focused ion beam can be controlled in less than 10nm, thereby realizes accurate fixed point etching.In the process of ion beam etching, usually need certain in site measurement means to know the degree of depth of etching and the lamination position that etches into, usually the secondary electron imaging of adopting ion beam to produce at present, or the pattern of employing scanning electron microscope home position observation etching position is judged speed and the position of etching.But along with the application of the nanostructureds such as quantum well in device, the bed thickness of these layers may be less than 10nm.The shortcoming that adopts the method such as scanning electron microscope to observe is because the secondary electron imaging measurement obtains is two-dimensional image, can't accurately measure longitudinally etching depth, therefore for the thin layer of these nanostructureds, can't locate exactly.
Atomic force microscope is a kind of important characterization tool of nanoscale surface nature, it uses the tip curvature radius usually is the probe of tens nanometers, it is approached sample surfaces, because the interaction between atoms power between probe and the sample is so that probe overarm arm produces deformation, adopt the deformation of optical lever measuring probe, and utilize the feedback computing so that probe and sample room interaction force are constant, then conducting probe just can obtain three-dimensional surface shape at surface scan, and resolution can arrive nanoscale.On this basis as adopt the conduction conducting probe, can measure the local force signals such as electric field force, magnetic field force, thus the local electric field of searching surface, magnetic field etc.
Summary of the invention
Technical matters to be solved by this invention is that a kind of thinning device of multilayer material is provided.
In order to solve the problems of the technologies described above, the invention provides a kind of thinning device of multilayer material, comprise a reaction chamber, an atomic force microscope, a focused ion beam apparatus and a sample stage, described sample stage, atomic force microscope and focused-ion-beam lithography device are in the reaction chamber; Described sample stage is used for placing testing sample; Described focused ion beam apparatus is used for the etching testing sample; Described atomic force microscope comprises conducting probe, is used for and testing sample contact and measure contact potential difference between conducting probe and the testing sample.
Further comprise the one scan electron microscope, place in the described reaction chamber, be used for described testing sample and conducting probe imaging; Described atomic force microscope further comprises a micro-cantilever, links to each other with described conducting probe.
Further comprise a lock-in amplifier, place in the described reaction chamber, be used for surveying the mechanical oscillation signal of conducting probe.
In order to solve the problems of the technologies described above, the present invention also provides a kind of method of utilizing the thinning device attenuate testing sample of multilayer material described above, comprises step:
1) testing sample with sandwich construction is placed in the reaction chamber;
2) utilize atomic force microscope to measure the first exposed surface of testing sample and the first contact potential difference V1 of conducting probe;
3) remove the conducting probe of atomic force microscope;
4) utilize focused ion beam apparatus etching the first exposed surface to degree of depth X, expose the second exposed surface;
5) utilize atomic force microscope to measure the second exposed surface of testing sample and the second contact potential difference V2 of conducting probe;
6) relatively V1 and V2 are big or small, as | V1-V2|〉Vm, then stop attenuate, otherwise repeating step 3 to 6, wherein Vm is a predefined threshold value.
The scope of described threshold value Vm is 10mV-1000mV; Etching depth X is not more than the smaller between described testing sample ground floor thickness and the second layer thickness.
In the described step 3, conducting probe is to remove by micro-cantilever, and the edge of removing rear distance the second exposed surface is greater than 1 μ m.
In the described step 2, when measuring the first contact potential difference V1, need to keep the constant distance of conducting probe and the first exposed surface, the scope of the distance of described conducting probe and the first exposed surface is 1nm-100nm; In the described step 5, when measuring the second contact potential difference V2, need to keep the constant distance of conducting probe and the second exposed surface, the scope of the distance of described conducting probe and the second exposed surface is 1nm-100nm.
The movement of described conducting probe need to take the image of electron microscope as guide, comprise the positional information of conducting probe and testing sample in the described image.
Described step 2 further comprises the steps: to measure the ground floor surface topography that obtains testing sample under the contact mode of atomic force microscope; Conducting probe is raised; Between the ground floor exposed surface of conducting probe and testing sample, apply an ac signal, drive the mechanical vibration of conducting probe generation and above-mentioned AC signal same frequency; Survey the conducting probe mechanical oscillation signal that above-mentioned AC signal frequency causes, obtain the amplitude of vibration; Non-vanishing such as the conducting probe vibration amplitude, then between the ground floor exposed surface of conducting probe and testing sample, apply a compensating direct current voltage, and adjust described compensating direct current voltage, until the vibration amplitude of conducting probe is zero; Making the conducting probe vibration amplitude is that zero compensating direct current magnitude of voltage is the first contact potential difference V1 between conducting probe and the testing sample ground floor exposed surface.
Described step 2 further comprises the steps: to measure the ground floor exposed surface pattern that obtains testing sample under the percussion mode of atomic force microscope, the resonant frequency of the micro-cantilever under the described percussion mode is the first AC signal, and described the first AC signal causes that conducting probe produces one first mechanical vibration; Apply one second AC signal between the ground floor exposed surface of conducting probe and testing sample, the electric field force that causes will drive one second mechanical vibration of conducting probe generation and the second AC signal same frequency; Survey the conducting probe mechanical oscillation signal that the frequency of the frequency of the first AC signal and the second AC signal causes, obtain respectively the amplitude of the first mechanical vibration and the second mechanical vibration; Distance between adjusting conducting probe and testing sample is so that the amplitude of the first mechanical vibration is a constant; Simultaneously between the ground floor exposed surface of conducting probe and testing sample, apply a compensating direct current voltage, and adjust described compensating direct current voltage, until the amplitude of the second mechanical vibration of conducting probe is zero; The amplitude that makes the second mechanical vibration of conducting probe is that zero compensating direct current magnitude of voltage is the first contact potential difference V1 between conducting probe and the testing sample ground floor exposed surface.
Also comprise step before the described step 1: according to the thickness of given described ground floor and the thickness of the second layer, judge that whether ground floor thickness is greater than second layer thickness; If ground floor thickness, then utilizes exposed surface to the degree of depth Y of focused ion beam apparatus etching testing sample greater than second layer thickness, the exposed surface that etching is exposed is as the first exposed surface; Otherwise with the exposed surface of testing sample as the first exposed surface.
Described etching depth Y is the thickness size that is not more than the greater between the thickness size of the thickness size of described ground floor and the second layer.
The invention has the advantages that, utilize the conducting probe in site measurement surface potential function of atomic force microscope, come assisted focused ion beam to know the degree of depth and the number of plies of etching.Every one deck in the multilayer material is because composition and dopant species different, so that its surface potential has larger difference, and based on the Surface Contact electric potential difference between conducting probe measurement conducting probe and the testing sample, its measuring accuracy can be less than 10mV, can effectively solve the original position etching control problem of multilayer material attenuate, significant to preparation and the property research of semiconductor devices.
Description of drawings
Fig. 1 is thinning device embodiment one synoptic diagram of multilayer material provided by the invention;
Fig. 2 is embodiment of the method two flow chart of steps of attenuate testing sample provided by the invention;
Fig. 3 A～3G is the embodiment of the method two measuring process figure of attenuate testing sample provided by the invention;
Fig. 4 is the preferred implementation flow chart of steps of embodiment of the method two steps 303 of attenuate testing sample provided by the invention;
Fig. 5 is testing sample structural representation in the embodiment of the method three of attenuate testing sample provided by the invention.
Embodiment
Elaborate below in conjunction with the embodiment of accompanying drawing to the method for the thinning device of multilayer material provided by the invention and attenuate testing sample.
Embodiment one
Figure 1 shows that the thinning device of a kind of multilayer material provided by the invention, comprise a reaction chamber 110, an atomic force microscope, a focused ion beam apparatus 103, one electron microscope 102 and a sample stage 100, and sample stage 100, focused ion beam apparatus 103, atomic force microscope and electron microscope 102 are in the reaction chamber 110; Sample stage 100 is used for placing testing sample; Atomic force microscope is used for measuring testing sample Surface Contact electric potential difference, comprises conducting probe 105, micro-cantilever 104 and control device 106; Focused ion beam apparatus 103 is used for the etching testing sample; Conducting probe 105 is used for and testing sample contact and measure contact potential difference between conducting probe and the testing sample; Micro-cantilever 104 is used for mobile conducting probe 105; Electron microscope 102 is used for the imaging of testing sample surface location.
Embodiment two
Figure 2 shows that embodiment of the method two flow chart of steps of attenuate testing sample provided by the invention, comprising: step 301 places a testing sample with sandwich construction in the reaction chamber; Step 302 moves to the testing sample top with the atomic force microscope conducting probe; Step 303 utilizes atomic force microscope to measure the first exposed surface of testing sample and the first contact potential difference V1 of conducting probe; Step 304 is removed the conducting probe of atomic force microscope; Step 305 is utilized focused ion beam apparatus etching the first exposed surface to degree of depth X, exposes the second exposed surface; Step 306 utilizes atomic force microscope to measure the second contact potential difference V2 of the second exposed surface and conducting probe; Step 307, relatively V1 and V2 are big or small, as | V1-V2|〉Vm, then stop attenuate, otherwise repeating step 303 to 306, wherein Vm is a predefined threshold value.
Fig. 3 A is depicted as embodiment of the method two steps 301 of attenuate testing sample provided by the invention, and testing sample 402 is placed on the sample stage 401, and wherein testing sample 402 comprises ground floor 402a, second layer 402b and the 3rd layer of 402c;
Fig. 3 B is depicted as embodiment of the method two steps 302 of attenuate testing sample provided by the invention, the etch areas of the ground floor 402a exposed surface appointment by 404 pairs of testing samples 402 of electron microscope and the conducting probe 403 position imagings of atomic force microscope, move conducting probe 403 by micro-cantilever 405 simultaneously, under the guide of the image that electron microscope 404 records, conducting probe 403 is moved to the ion beam etching machining area top of ground floor 402a exposed surface;
Fig. 3 C is depicted as embodiment of the method two steps 303 of attenuate testing sample provided by the invention, the first contact potential difference V1 between the ground floor 402a exposed surface of measurement conducting probe 403 and testing sample 402, and the spacing range of conducting probe and the first exposed surface is 1nm-100nm.
Fig. 3 D is depicted as embodiment of the method two steps 304 of attenuate testing sample provided by the invention, by 404 pairs of etch areas of electron microscope and conducting probe 403 position imagings, move Edge Distance that conducting probe 403 leaves etch areas greater than 1 μ m by micro-cantilever 405, prevent focused ion beam damage conducting probe 403.
Fig. 3 E is depicted as embodiment of the method two steps 305 of attenuate testing sample provided by the invention, opens focused ion beam apparatus 406, and the size that provides during according to device fabrication is set etching depth X.Etch areas to the ground floor 402a exposed surface of testing sample 402 is carried out etching, closes focused ion beam apparatus 406 after etching operation is finished.The size of etching depth X should be for being not more than the thickness size of the smaller between described testing sample 402 ground floor 402a thickness and the second layer 402b thickness.Usually the thickness of each layer growth has discreet value in the device, can provide correlation parameter by the technician of growth of device.The thickness size of selected described ground floor 402a and the thickness size of second layer 402b compare, and the smaller among both is as the maximal value of etching depth X.Fig. 3 F is depicted as embodiment of the method two steps 306 of attenuate testing sample provided by the invention, repeating step 303, the contact potential difference V2 between the exposed surface of measurement conducting probe 403 and etch areas.
Fig. 3 G is depicted as embodiment of the method two steps 307 of attenuate testing sample provided by the invention, the size that compares contact potential difference V2 and contact potential difference V1, such as both greater than Vm, just think and etched into second layer 402b, can stop etching, otherwise think that then the exposed surface of etch areas still belongs to ground floor 402a, then need to continue execution in step 304～step 307, wherein Vm is a predefined threshold value.The scope of threshold value Vm is 10mV ~ 1000mV.
Continue accurate etching second layer 402b such as needs, can just repeat above-mentioned steps 301～307.
As a kind of optional embodiment, also comprise step before the described step 1: the thickness of each layer growth has discreet value in the device usually, can provide correlation parameter by the technician of growth of device.According to the thickness of given described ground floor 402a and the thickness of second layer 402b, judge that whether ground floor 402a thickness is greater than second layer 402b thickness; If ground floor 402a thickness, then utilizes exposed surface to the degree of depth Y of focused ion beam apparatus etching testing sample 402 greater than second layer 402b thickness, the exposed surface that etching is exposed is as the first exposed surface; Otherwise with the exposed surface of testing sample 402 as the first exposed surface.
Described etching depth Y is the thickness size that is not more than the greater between the thickness size of the thickness size of described ground floor 402a and second layer 402b.
Figure 4 shows that the preferred implementation flow chart of steps of embodiment of the method two steps 303 of attenuate testing sample provided by the invention.As one preferred embodiment, step 303 may further include following steps:
The above only is the preferred implementation of embodiment two steps 303, this step can also adopt other embodiments to measure, a kind of enforcement wherein comprises the steps: that the ground floor 402a exposed surface of conducting probe 403 and testing sample 402 periodically contacts, obtain the ground floor 402a exposed surface pattern of testing sample 402 under the percussion mode of employing atomic force microscope by measurement, the resonant frequency of the micro-cantilever 405 under the described percussion mode is the first AC signal, and described the first AC signal causes that conducting probe 403 produces one first mechanical vibration; Apply one second AC signal between the ground floor 402a of conducting probe 403 and testing sample 402 exposed surface, the electric field force that causes will drive one second mechanical vibration of conducting probe 403 generations and the second AC signal same frequency; Conducting probe 403 mechanical oscillation signals that the frequency that adopts lock-in amplifier to survey the frequency of the first AC signal and the second AC signal causes obtain respectively the amplitude of the first mechanical vibration and the second mechanical vibration; Regulate the distance of 402 of conducting probe 403 and testing samples so that the amplitude of the first mechanical vibration is a constant; Simultaneously between the ground floor 402a of conducting probe 403 and testing sample 402 exposed surface, apply a compensating direct current voltage, and adjust described compensating direct current voltage, until the amplitude of the second mechanical vibration of conducting probe 403 is zero; The amplitude that makes the second mechanical vibration of conducting probe 403 is that zero compensating direct current magnitude of voltage is the first contact potential difference V1 between conducting probe 403 and the testing sample 402 ground floor 402a exposed surfaces.
Embodiment three
Figure 5 shows that testing sample structural representation in the embodiment of the method three of attenuate testing sample provided by the invention.Testing sample 206 has the heterogeneous multi-layer junction structure, comprises p
+GaAs layer 205, p
+AlGaAs layer 204, p
+GaAs layer 203, InGaAs layer 202, n
-GaAs layer 201, n
+GaAs layer 200 and n
-GaAs substrate layer 210.And the bed thickness of above-mentioned layer structure is respectively 0.5 μ m, 0.03 μ m, 0.5 μ m, 0.02 μ m, 2 μ m, 0.5 μ m.
The method of attenuate testing sample 206 comprises: testing sample 206 is placed in the reaction chamber; By etch areas and the conducting probe position imaging of electron microscope to p+GaAs layer 205 appointment of sample, move conducting probe by micro-cantilever simultaneously, under the guide of electron microscope image, the atomic force microscope conducting probe is moved to ion beam etching machining area top; Measure the first contact potential difference V1 between conducting probe and the testing sample; To etch areas and the imaging of conducting probe position, leave the Edge Distance of etch areas by the micro-cantilever traveling probe greater than 1 μ m by electron microscope, prevent focused ion beam damage conducting probe; Open focused ion beam apparatus, the ion beam accelerating potential is made as 25KV and line is made as 10pA, and the size that provides during again according to device fabrication is set etching depth X, because p
+The bed thickness of GaAs layer 205 is 0.5 μ m, and therefore setting etching time is 480 seconds, and etching depth X gets 0.48 μ m micron, to p
+The etch areas of GaAs layer 205 is carried out etching, and the about 1nm/s of etch rate closes focused ion beam apparatus after etching operation is finished; Contact potential difference V2 between the exposed surface of measurement conducting probe and etch areas; Relatively the size of contact potential difference V2 and contact potential difference V1, is just thought to have etched into p greater than 20mV such as both
+ AlGaAs layer 204 can stop etching, otherwise thinks that then the exposed surface of etch areas still belongs to p
+GaAs layer 205 then needs to continue to carry out etching, but should adjust, and should reduce I.B.M. time and etching depth, as etching time being set as 10s, each about 10nm of etching depth.
The above only is preferred implementation of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (12)
1. the thinning device of a multilayer material is characterized in that, comprises a reaction chamber, an atomic force microscope, a focused ion beam apparatus and a sample stage, and described sample stage, atomic force microscope and focused ion beam apparatus are in the reaction chamber; Described sample stage is used for placing testing sample; Described focused ion beam apparatus is used for the etching testing sample; Described atomic force microscope comprises conducting probe, is used for and testing sample contact and measure contact potential difference between conducting probe and the testing sample.
2. the thinning device of multilayer material according to claim 1 is characterized in that, further comprises the one scan electron microscope, places in the described reaction chamber, is used for described testing sample and conducting probe imaging; Described atomic force microscope further comprises a micro-cantilever, links to each other with described conducting probe.
3. the thinning device of multilayer material according to claim 1 is characterized in that, further comprises a lock-in amplifier, places in the described reaction chamber, is used for surveying the mechanical oscillation signal of conducting probe.
4. a method of utilizing the thinning device attenuate testing sample of multilayer material as claimed in claim 1 is characterized in that, comprises step:
1) testing sample with sandwich construction is placed in the reaction chamber;
2) utilize atomic force microscope to measure the first exposed surface of testing sample and the first contact potential difference V1 of conducting probe;
3) remove the conducting probe of atomic force microscope;
4) utilize focused ion beam apparatus etching the first exposed surface to degree of depth X, expose the second exposed surface;
5) utilize atomic force microscope to measure the second exposed surface of testing sample and the second contact potential difference V2 of conducting probe;
6) relatively V1 and V2 are big or small, as | V1-V2|〉Vm, then stop attenuate, otherwise repeating step 3 to 6, wherein Vm is a predefined threshold value.
5. the method for attenuate testing sample according to claim 4 is characterized in that, the scope of described threshold value Vm is 10mV-1000mV; Etching depth X is not more than the smaller between described testing sample ground floor thickness and the second layer thickness.
6. the method for attenuate testing sample according to claim 4 is characterized in that, in the described step 3, conducting probe is to remove by micro-cantilever, and the edge of removing rear distance the second exposed surface is greater than 1 μ m.
7. the method for attenuate testing sample according to claim 4, it is characterized in that, in the described step 2, when measuring the first contact potential difference V1, need to keep the constant distance of conducting probe and the first exposed surface, the scope of the distance of described conducting probe and the first exposed surface is 1nm-100nm; In the described step 5, when measuring the second contact potential difference V2, need to keep the constant distance of conducting probe and the second exposed surface, the scope of the distance of described conducting probe and the second exposed surface is 1nm-100nm.
8. the method for attenuate testing sample according to claim 4 is characterized in that, the movement of described conducting probe need to take the image of electron microscope as guide, comprise the positional information of conducting probe and testing sample in the described image.
9. the method for attenuate testing sample according to claim 4 is characterized in that, described step 2 further comprises the steps: to measure the ground floor surface topography that obtains testing sample under the contact mode of atomic force microscope; Conducting probe is raised; Between the ground floor exposed surface of conducting probe and testing sample, apply an ac signal, drive the mechanical vibration of conducting probe generation and above-mentioned AC signal same frequency; Survey the conducting probe mechanical oscillation signal that above-mentioned AC signal frequency causes, obtain the amplitude of vibration; Non-vanishing such as the conducting probe vibration amplitude, then between the ground floor exposed surface of conducting probe and testing sample, apply a compensating direct current voltage, and adjust described compensating direct current voltage, until the vibration amplitude of conducting probe is zero; Making the conducting probe vibration amplitude is that zero compensating direct current magnitude of voltage is the first contact potential difference V1 between conducting probe and the testing sample ground floor exposed surface.
10. the method for attenuate testing sample according to claim 4, it is characterized in that, described step 2 further comprises the steps: to measure the ground floor exposed surface pattern that obtains testing sample under the percussion mode of atomic force microscope, the resonant frequency of the micro-cantilever under the described percussion mode is the first AC signal, and described the first AC signal causes that conducting probe produces one first mechanical vibration; Apply one second AC signal between the ground floor exposed surface of conducting probe and testing sample, the electric field force that causes will drive one second mechanical vibration of conducting probe generation and the second AC signal same frequency; Survey the conducting probe mechanical oscillation signal that the frequency of the frequency of the first AC signal and the second AC signal causes, obtain respectively the amplitude of the first mechanical vibration and the second mechanical vibration; Distance between adjusting conducting probe and testing sample is so that the amplitude of the first mechanical vibration is a constant; Simultaneously between the ground floor exposed surface of conducting probe and testing sample, apply a compensating direct current voltage, and adjust described compensating direct current voltage, until the amplitude of the second mechanical vibration of conducting probe is zero; The amplitude that makes the second mechanical vibration of conducting probe is that zero compensating direct current magnitude of voltage is the first contact potential difference V1 between conducting probe and the testing sample ground floor exposed surface.
11. the method for attenuate testing sample according to claim 4 is characterized in that, also comprises step before the described step 1: according to the thickness of given described ground floor and the thickness of the second layer, judge that whether ground floor thickness is greater than second layer thickness; If ground floor thickness, then utilizes exposed surface to the degree of depth Y of focused ion beam apparatus etching testing sample greater than second layer thickness, the exposed surface that etching is exposed is as the first exposed surface; Otherwise with the exposed surface of testing sample as the first exposed surface.
12. the method for attenuate testing sample according to claim 11 is characterized in that, described etching depth Y is the thickness size that is not more than the greater between the thickness size of the thickness size of described ground floor and the second layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110416216 CN102520212B (en) | 2011-12-14 | 2011-12-14 | Device for thinning multi-layer material and method for thinning to-be-detected sample |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110416216 CN102520212B (en) | 2011-12-14 | 2011-12-14 | Device for thinning multi-layer material and method for thinning to-be-detected sample |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102520212A CN102520212A (en) | 2012-06-27 |
| CN102520212B true CN102520212B (en) | 2013-10-30 |
Family
ID=46291200
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110416216 Expired - Fee Related CN102520212B (en) | 2011-12-14 | 2011-12-14 | Device for thinning multi-layer material and method for thinning to-be-detected sample |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102520212B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105445976B (en) * | 2016-01-18 | 2018-09-04 | 京东方科技集团股份有限公司 | Thinning device and its application method |
| EP3364444A1 (en) | 2017-02-21 | 2018-08-22 | IMEC vzw | A method and apparatus for transmission electron microscopy |
| CN107507787B (en) * | 2017-08-31 | 2021-02-12 | 长江存储科技有限责任公司 | Detection method of channel hole |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5618760A (en) * | 1994-04-12 | 1997-04-08 | The Board Of Trustees Of The Leland Stanford, Jr. University | Method of etching a pattern on a substrate using a scanning probe microscope |
| US5742172A (en) * | 1994-05-23 | 1998-04-21 | Seiko Instruments Inc. | Scanning probe microscope and method for obtaining topographic image, surface potential image, and electrostatic capacitance distribution image |
| CN1261458A (en) * | 1997-04-16 | 2000-07-26 | 麦克里昂公司 | Pattern film repair using a gas assisted focused particle beam system |
| CN101079331A (en) * | 2005-08-04 | 2007-11-28 | 中国科学院物理研究所 | A tunnel probe for scanning the tunnel microscope and its making method |
| CN102089864A (en) * | 2008-05-12 | 2011-06-08 | 加利福尼亚大学董事会 | Photoelectrochemical etching of P-type semiconductor heterostructures |
| CN102269772A (en) * | 2010-06-04 | 2011-12-07 | 中芯国际集成电路制造(上海)有限公司 | Preparation method of nano-particles floating gate transmission electron microscope observation sample |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3577517B2 (en) * | 2002-05-14 | 2004-10-13 | 独立行政法人物質・材料研究機構 | Method and apparatus for simultaneous measurement of pH and potential on material surface |
-
2011
- 2011-12-14 CN CN 201110416216 patent/CN102520212B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5618760A (en) * | 1994-04-12 | 1997-04-08 | The Board Of Trustees Of The Leland Stanford, Jr. University | Method of etching a pattern on a substrate using a scanning probe microscope |
| US5742172A (en) * | 1994-05-23 | 1998-04-21 | Seiko Instruments Inc. | Scanning probe microscope and method for obtaining topographic image, surface potential image, and electrostatic capacitance distribution image |
| CN1261458A (en) * | 1997-04-16 | 2000-07-26 | 麦克里昂公司 | Pattern film repair using a gas assisted focused particle beam system |
| CN101079331A (en) * | 2005-08-04 | 2007-11-28 | 中国科学院物理研究所 | A tunnel probe for scanning the tunnel microscope and its making method |
| CN102089864A (en) * | 2008-05-12 | 2011-06-08 | 加利福尼亚大学董事会 | Photoelectrochemical etching of P-type semiconductor heterostructures |
| CN102269772A (en) * | 2010-06-04 | 2011-12-07 | 中芯国际集成电路制造(上海)有限公司 | Preparation method of nano-particles floating gate transmission electron microscope observation sample |
Non-Patent Citations (3)
| Title |
|---|
| JP特开2003-329643A 2003.11.19 |
| 刻蚀腔InGaAsP/InP双异质结激光器的制作与特性;颜学进等;《半导体学报》;19971130;第18卷(第11期);836-839 * |
| 颜学进等.刻蚀腔InGaAsP/InP双异质结激光器的制作与特性.《半导体学报》.1997,第18卷(第11期),836-839. |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102520212A (en) | 2012-06-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102352023B1 (en) | System for performing in-line nanoprobing on semiconductor wafer and method for performing electrical testing of devices in semiconductor wafer | |
| CN102353815B (en) | Device and method for measuring surface local electronic state of material | |
| CN101317138B (en) | Scanning near field ultrasonic holography method and system | |
| CN102520212B (en) | Device for thinning multi-layer material and method for thinning to-be-detected sample | |
| KR100944280B1 (en) | Foreign matter or abnormal unsmoothness inspection apparatus and foreign matter or abnormal unsmoothness inspection method | |
| EP3722816B1 (en) | Methods of aligning at least two probe tips in a scanning adapter | |
| Guthrey et al. | Effect of Surface Texture on Pinhole Formation in SiO x-Based Passivated Contacts for High-Performance Silicon Solar Cells | |
| CN102095898A (en) | Optical microscopy-atomic force microscopy double-probe imaging method and device | |
| CN107727886A (en) | A kind of inversion type high speed Electrochemical Atomic Force Microscopy | |
| JP2014502354A (en) | Real-space mapping of ion diffusion and electrochemical activity in energy storage materials and energy conversion materials | |
| CN102768292B (en) | Ultrahigh vacuum fast scanning microscopy method based on carbon nanotube probe | |
| US9823208B2 (en) | Method for measuring spreading resistance and spreading resistance microscope | |
| CN103207287B (en) | Method for detecting irradiation internal damage of nuclear fusion material | |
| CN113406359A (en) | Method and system for backside plan view sheet preparation | |
| JP2008241711A (en) | Microwave waveguide probe of microwave atomic force microscope | |
| CN107015028B (en) | In-situ detection-based nanoscale initial laser damage detection method and system | |
| CN110850116B (en) | Method for preparing three-dimensional atom probe sample in turnover mode | |
| JP4505946B2 (en) | Charged particle beam apparatus and probe control method | |
| KR101390073B1 (en) | Measurement method of microroughness and measurement apparatus using thereof | |
| CN113358607B (en) | Method for directly imaging drift process of low-dimensional semiconductor carrier | |
| CN111220820B (en) | Preparation method of atomic probe tip sample for accurately positioning fin field effect transistor | |
| CN114155219B (en) | Method for measuring pressure and electric shear stack high-frequency motion displacement based on AFM knocking processing track | |
| RU2510062C2 (en) | Method of processing signals in scanning devices | |
| Op de Beeck et al. | Nanoscale localization of an atom probe tip through electric field mapping | |
| Schoenek | Tunneling Current and Topographical Measurements of Semiconducting Structures Relevant for Electronic Applications using Atomic Force Microscopy |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131030 Termination date: 20201214 |