CN102509729B - Preparation method for adjustable thermo-optic band pass filter pixel array - Google Patents
Preparation method for adjustable thermo-optic band pass filter pixel array Download PDFInfo
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- CN102509729B CN102509729B CN201110370908.8A CN201110370908A CN102509729B CN 102509729 B CN102509729 B CN 102509729B CN 201110370908 A CN201110370908 A CN 201110370908A CN 102509729 B CN102509729 B CN 102509729B
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Abstract
The invention discloses a preparation method for an adjustable thermo-optic band pass filter pixel array. Heat insulation columns are manufactured on the front side of a cavity material via photoetching and etching; heat insulation is achieved in an Au/Au linkage manner; and the characteristics of broad spectrum and high reflection ratio of an Au thin film are utilized, and a crystalline state semiconducting material with high thermo-optic coefficient serves as a cavity to achieve an F-P cavity thermo-optic adjustable filter. In the method provided by the invention, an amorphous silicon thin-film material with near infrared band low absorption coefficient is not required, so that the difficulty of the generation of an optical film is greatly reduced.
Description
Technical field
The present invention relates to thermal imaging, refer in particular to non refrigerating infrared imaging field, and semiconductor fabrication.
Background technology
Uncooled infrared detection system is due to its lower cost, less volume, and application prospect is very extensive.At present, the commercialization of infrared detecting chip based on material heat resistance characteristics such as amorphous silicon, vanadium oxides.Meanwhile, adopting micro-band pass filter infra-red imaging array of optical read-out mode is its strong competitor.Because optical read-out uncooled infrared imaging system is full photosystem, compare with traditional pyroelectricity or polysilicon non refrigerating infrared imaging instrument, without complicated reading circuit.Adopting Fabry-Perot(F-P) chamber array is as core texture, utilizes multiple-beam interference principle to read infrared signal, not only can make the compact conformation of system succinct, detectivity is higher, and be easy to large-scale integrated.The patent application that is entitled as " the infrared camera system " (application number: 200480027494.7) that a typical structure of this type systematic can be submitted to reference to " Redshift Systems Corp. " for 2004, it comprises tunable thermo-optical filter pel array, near-infrared light source and near infrared detector array, and wherein the manufacture of pel array is core wherein.
Here each pel array has all comprised heat insulation structure, and adjustable thermo-optic band pass filter, for this filter, need its constituent material to there is higher thermo-optical coeffecient (generally adopting amorphous silicon membrane) on the one hand, need it near infrared detection light, to have the little absorption of trying one's best on the one hand, so the preparation of this filter have very high difficulty.
Summary of the invention
In order to overcome the deficiency of background technology, the invention provides a kind of manufacture method of adjustable thermo-optic band pass filter pixel array.
The manufacture method of adjustable thermo-optic band pass filter pixel array provided by the invention, comprises the following steps:
1) choose cavity material and backing material;
2) by photoetching, etching technics, in the front of cavity material, make hot insulated column;
3) in the non-insulated column district in cavity material front and the surperficial evaporation Au metal level of described hot insulated column;
4) at substrate material surface evaporation Au metal level;
5) the Au metal level of the Au metal level on hot insulated column surface and backing material is carried out to bonding;
6) back side of etching cavity material, the thickness that makes described cavity material is the integral multiple of 1/2 optical wavelength of near infrared detection light used;
7) adopt photoetching, etching technics to separate the pixel in cavity material, form pel array;
8) on each pixel surface, prepare high reflectance deielectric-coating.
Wherein, described cavity material is high thermo-optical coeffecient material, high thermo-optical coeffecient material near infrared light transparent and be easy to processing, thermo-optical coeffecient is higher than 1 * 10
-4/ K, high thermo-optical coeffecient material comprises GaAs wafer or Si wafer; Wherein, the thermo-optical coeffecient of described Si wafer is 1.8 * 10
-4/ K, the thermo-optical coeffecient of described GaAs wafer is 2.5 * 10
-4/ K.The lateral dimension of described hot insulated column, according to the size design of pixel, is no more than 1/10 of pixel lateral dimension, and the height of described hot insulated column is needed by heat isolation, is not less than 10 μ m; The roughness on surface, the positive non-insulated column district of described cavity material is not more than 10nm; The roughness in the non-insulated column district in the height of described hot insulated column and cavity material front can adopt the adjustment pressure of etching gas and the mode of radio-frequency power to realize.
Wherein, described metal level is Au metal level, and its thickness is not less than 1.5 μ m; The etching surface metal level in the positive non-insulated column of described cavity material district forms high reflectance wide range speculum.
Wherein, the back side of described cavity material, through etching, makes the roughness on the cavity material surface after etching be not more than 5nm.
Wherein, described high reflectance deielectric-coating is different alternately laminated the forming of two media film of refraction, and the different two media film of described refractive index is near infrared detection optical transparency, and the thickness of every kind of deielectric-coating is 1/4 optical wavelength.
Wherein, the two media film that refractive index is different, its compound mode comprises TiO
2/ SiO
2combination or Si/SiO
2combination, wherein, based on TiO
2/ SiO
2compound mode, described high reflectance deielectric-coating comprises 2 layers of TiO
2with 2 layers of SiO
2, based on Si/SiO
2compound mode, described high reflectance deielectric-coating comprises 2 layers of Si and 2 layers of SiO
2.
The invention discloses a kind of manufacture method of adjustable thermo-optic band pass filter pixel array, by photoetching, etching technics, in the front of cavity material, make hot insulated column and utilize Au/Au bonding mode to realize heat isolation, utilize wide spectrum, the high reflectance characteristic of Au film simultaneously, and adopt the Crystalline Semiconductors material of high thermo-optical coeffecient to realize F-P chamber thermo-optical tunable optic filter as cavity, the amorphous silicon thin-film materials without growth with the low absorption coefficient of near infrared band, greatly reduces the difficulty of growing optics film.
Accompanying drawing explanation
Fig. 1 is the manufacture method flow chart of the embodiment of the present invention.
Fig. 2 is the making schematic flow sheet of the pel array of the embodiment of the present invention, wherein, Fig. 2 a is for making the schematic diagram of hot insulated column, Fig. 2 b is the schematic diagram in cavity material surface evaporated metal layer, Fig. 2 c is metal level bonding schematic diagram, Fig. 2 d is etching cavity material schematic rear view, and Fig. 2 e is for separating pixel schematic diagram, and Fig. 2 f is evaporation high reflectance deielectric-coating schematic diagram.
Embodiment
With reference to the accompanying drawings, in conjunction with specific embodiments, the present invention is described in more detail.
Embodiment 1
As shown in Figure 1, the manufacture method of embodiment of the present invention adjustable thermo-optic band pass filter pixel array comprises:
S101, chooses cavity material and backing material;
S102, makes hot insulated column by photoetching, etching technics in the front of cavity material;
S103, in the non-insulated column district in cavity material front and the surperficial evaporation Au metal level of described hot insulated column;
S104, at substrate material surface evaporation Au metal level;
S105, carries out bonding by the Au metal level of the Au metal level on hot insulated column surface and backing material;
S106, the back side of etching cavity material, the thickness that makes described cavity material is the integral multiple of 1/2 optical wavelength of near infrared detection light used;
S107, adopts photoetching, etching technics to separate the pixel in cavity material, forms pel array;
S108, prepares high reflectance deielectric-coating on each pixel surface.
As shown in Figure 2, according to the reliability of design needs and actual process, choose cavity material 210 for Si wafer, its thermo-optical coeffecient reaches 1.8 * 10
-4/ K, and very little at 850nm and above wave band absorption coefficient.Backing material 220 is chosen common glass sheet, and in embodiments of the present invention, the selection of backing material does not have specific (special) requirements, has rigidity, easy processing etc., and general material all can meet the demands, such as Si sheet, and sheet glass etc.
As shown in Figure 2 a, in cavity material 210 fronts, by photoetching, etching technics, make hot insulated column 211; Hot insulated column 211 lateral dimensions are generally no more than 1/10 of pixel lateral dimension, and height, according to heat isolation needs, is generally not less than 10 μ m.In the present embodiment, hot insulated column 211 is the cylinder of diameter 10 μ m; For guaranteeing that the etching surface in the optical property ，Fei insulated column district of filter requires as far as possible evenly, roughness is controlled in 10nm, by controlling etching gas pressure and radio-frequency power, realizes.
As shown in Figure 2 b, at the positive evaporation Au metal level of cavity material 210, the Au metal level 213 that comprises the Au metal level 212 of hot insulated column 211 surperficial evaporations and the etching surface evaporation in the positive non-insulated column of cavity material 210 district, described Au metal level 213 forms high reflectance wide range speculum, at 800nm to 1100nm wave band, its reflectivity is not less than 97%; Au metal level 221 more than the surperficial evaporation 1.5 μ m of backing material 220.The thickness of described metal level 212, metal level 213 is more than 1.5 μ m, and in the present embodiment, the thickness of described Au metal level 212, metal level 213 is 1.5 μ m, and described Au metal level 221 thickness are 1.5 μ m.
As shown in Figure 2 c, by the brilliant bonding of Au/Au congruent melting, the Au metal level of hot insulated column 211 end faces 212 and the Au metal level 221 of backing material are carried out to bonding, during Au/Au bonding, temperature is controlled to 350 ℃ of left and right, pressure 2000N, keeps 20 minutes.
As shown in Figure 2 d, the another side of etching cavity material, accurately controls thickness and uniformity, and final thickness is the integral multiple of 1/2 optical wavelength of near infrared detection light used, here choosing thickness is 2.4 microns, by controlling radio-frequency power and etching gas pressure, roughness is controlled in 5nm.
As shown in Figure 2 e, utilize photoetching, plasma etching industrial, each pixel is cut off and opened, form pel array, between pixel, be spaced apart 2 microns.
As shown in Fig. 2 f, adopt electron beam evaporation plating mode, at each pixel surface evaporation high reflectance deielectric-coating 230, be followed successively by the TiO of 84nm from bottom to top
2, 142nm SiO
2, 84nm TiO
2, 142nm SiO
2, forming F-P chamber band pass filter with Au metal level 213 is common, cavity is crystalline silicon, so this filter has good thermo-optical tunability characteristic, reflectivity can reach more than 95%.
Embodiment 2
As shown in Figure 1, the manufacture method of embodiment of the present invention adjustable thermo-optic band pass filter pixel array comprises:
S101, chooses cavity material and backing material;
S102, makes hot insulated column by photoetching, etching technics in the front of cavity material;
S103, in the non-insulated column district in cavity material front and the surperficial evaporation Au metal level of described insulated column;
S104, at substrate material surface evaporation Au metal level;
S105, carries out bonding by the Au metal level of the Au metal level on hot insulated column surface and backing material;
S106, the back side of etching cavity material, the thickness that makes described cavity material is the integral multiple of 1/2 optical wavelength of near infrared detection light used;
S107, adopts photoetching, etching technics to separate the pixel in cavity material, forms pel array;
S108, prepares high reflectance deielectric-coating on each pixel surface.
As shown in Figure 2, according to the reliability of design needs and actual process, choose cavity material 210 for GaAs wafer, its thermo-optical coeffecient reaches 2.5 * 10
-4/ K, and very little at 850nm and above wave band absorption coefficient.Backing material 220 is chosen K9 glass, and in embodiments of the present invention, the selection of backing material does not have specific (special) requirements, has rigidity, easy processing etc., and general material all can meet the demands, such as Si sheet, and sheet glass etc.
As shown in Figure 2 a, in cavity material 210 fronts, by photoetching, etching technics, make hot insulated column 211; Hot insulated column 211 lateral dimensions are generally no more than 1/10 of pixel lateral dimension, and height is needed by heat isolation, is generally not less than 10 μ m.In the present embodiment, hot insulated column 211 is the cylinder of diameter 8 μ m; For guaranteeing that the etching surface in the optical property ，Fei insulated column district of filter requires as far as possible evenly, roughness is controlled in 10nm, by controlling etching gas pressure and radio-frequency power, realizes.
As shown in Figure 2 b, at the positive evaporation Au metal level of cavity material 210, the Au metal level 213 that comprises the Au metal level 212 of hot insulated column 211 surperficial evaporations and the etching surface evaporation in the positive non-insulated column of cavity material 210 district, described Au metal level 213 forms high reflectance wide range speculum, at 800nm to 1100nm wave band, its reflectivity is not less than 97%; Au metal level 221 more than the surperficial evaporation 1.5 μ m of backing material 220.The thickness of described Au metal level 212, Au metal level 213 is more than 1.5 μ m, and in the present embodiment, the thickness of described Au metal level 212 and Au metal level 213 is 2 μ m, and described Au metal level 221 thickness are 2 μ m.
As shown in Figure 2 c, by the brilliant bonding of Au/Au congruent melting, the Au metal level of hot insulated column 211 end faces 212 and the Au metal level 221 of backing material are carried out to bonding, during Au/Au bonding, temperature is controlled to 350 ℃ of left and right, pressure 2000N, keeps 20 minutes.
As shown in Figure 2 d, the another side of etching cavity material, accurately controls thickness and uniformity, and final thickness is the integral multiple of 1/2 optical wavelength of near infrared detection light used, here choosing thickness is 1.2 μ m, by controlling radio-frequency power and etching gas pressure, roughness is controlled in 5nm.
As shown in Figure 2 e, utilize photoetching, plasma etching industrial, each pixel is cut off and opened, form pel array, between pixel, be spaced apart 1 micron.
As shown in Fig. 2 f, adopt electron beam evaporation plating mode, at each pixel surface evaporation Si/SiO
2high reflectance deielectric-coating 230, is followed successively by the Si of 61nm, the SiO of 142nm from bottom to top
2, the Si of 61nm is, the SiO of 142nm
2, forming F-P chamber band pass filter with Au metal level 213 is common, cavity is crystalline silicon, so this filter has good thermo-optical tunability characteristic, reflectivity can reach more than 95%.
Protection range of the present invention is not limited to above-mentioned situation; those skilled in the art can carry out various selections not departing from protection range; for example, the choosing of described chamber bottom material, it is 1.8 * 10 that those skilled in the art can select the disclosed thermo-optical coeffecient of the embodiment of the present invention 1
-4the Si wafer of/K, also can select the disclosed thermo-optical coeffecient of the embodiment of the present invention 2 is 2.5 * 10
-4the GaAs wafer of/K, also can select thermo-optical coeffecient higher than 1 * 10 simultaneously
-4other high thermo-optical coeffecient materials of/K.
The embodiment of the invention discloses a kind of manufacture method of adjustable thermo-optic band pass filter pixel array, by photoetching, etching technics, in the front of cavity material, make hot insulated column, and utilize Au/Au bonding mode to realize heat isolation; Utilize wide spectrum, the high reflectance characteristic of Au film simultaneously, and adopt the Crystalline Semiconductors material of high thermo-optical coeffecient to realize F-P chamber thermo-optical tunable optic filter as cavity, the amorphous silicon thin-film materials without growth with the low absorption coefficient of near infrared band, greatly reduces blooming growth difficulty.And, the invention is not restricted to above-described embodiment, without departing from the present invention, can carry out various changes and modifications.
Claims (11)
1. a manufacture method for adjustable thermo-optic band pass filter pixel array, is characterized in that, comprising:
Choose cavity material and backing material;
By photoetching, etching technics, in the front of cavity material, make hot insulated column;
The etching surface in non-insulated column district and the surperficial evaporation Au metal level of hot insulated column in cavity material front;
At substrate material surface evaporation Au metal level;
The Au metal level of cavity material and backing material is carried out to bonding;
The back side of etching cavity material, the thickness that makes described cavity material is the integral multiple of 1/2 optical wavelength of near infrared detection light used;
Adopt photoetching, etching technics to separate the pixel in cavity material, form pel array;
On each pixel surface, prepare high reflectance deielectric-coating.
2. manufacture method according to claim 1, is characterized in that, described cavity material is high thermo-optical coeffecient material, and thermo-optical coeffecient is higher than 1 * 10
-4/ K.
3. manufacture method according to claim 2, is characterized in that, described high thermo-optical coeffecient material is GaAs wafer or Si wafer, and wherein, the thermo-optical coeffecient of described Si wafer is 1.8 * 10
-4/ K, the thermo-optical coeffecient of described GaAs wafer is 2.5 * 10
-4/ K.
4. according to the manufacture method described in claim 1 or 2 or 3, it is characterized in that, the lateral dimension of described hot insulated column, according to the size design of pixel, is no more than 1/10 of pixel lateral dimension, the height of described hot insulated column is needed by heat isolation, is not less than 10 μ m; The etching surface roughness in the non-insulated column district in described cavity material front is not more than 10nm.
5. manufacture method according to claim 4, is characterized in that, the roughness in the non-insulated column district in the height of described hot insulated column and cavity material front can adopt the adjustment pressure of etching gas and the mode of radio-frequency power to realize.
6. manufacture method according to claim 1, is characterized in that, described metal level is Au metal level, and its thickness is not less than 1.5 μ m; Wherein, the surface metal-layer in the non-insulated column in the front of described cavity material district forms high reflectance wide range speculum.
7. manufacture method according to claim 1, is characterized in that, the back side of described cavity material, through etching, makes the roughness on the cavity material surface after etching be not more than 5nm.
8. manufacture method according to claim 1, is characterized in that, described high reflectance deielectric-coating is alternately laminated the forming of two media film that refractive index is different.
9. manufacture method according to claim 8, is characterized in that, the different two media film of described refractive index is near infrared detection optical transparency, and the thickness of every kind of deielectric-coating is 1/4 optical wavelength of near infrared detection light used.
10. manufacture method according to claim 9, is characterized in that, the two media film that described refractive index is different, and its compound mode is TiO
2/ SiO
2combination or Si/SiO
2combination.
11. manufacture methods according to claim 10, is characterized in that, based on TiO
2/ SiO
2during compound mode, described high reflectance deielectric-coating comprises 2 layers of TiO
2with 2 layers of SiO
2; Based on Si/SiO
2during compound mode, described high reflectance deielectric-coating comprises 2 layers of Si and 2 layers of SiO
2.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101047091A (en) * | 2006-03-28 | 2007-10-03 | 三星Sdi株式会社 | Filter, plasma display device including the same and method of manufacturing the filter |
| CN101995295A (en) * | 2009-08-19 | 2011-03-30 | 北京大学 | Non-refrigerating infrared focal plane array as well as preparation method and application thereof |
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| US7135679B2 (en) * | 2004-12-06 | 2006-11-14 | Thermophotonics Inc. | Method and system for enhanced radiation detection |
| US7842922B2 (en) * | 2005-05-17 | 2010-11-30 | Heimann Sensor Gmbh | Thermopile infrared sensor array |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101047091A (en) * | 2006-03-28 | 2007-10-03 | 三星Sdi株式会社 | Filter, plasma display device including the same and method of manufacturing the filter |
| CN101995295A (en) * | 2009-08-19 | 2011-03-30 | 北京大学 | Non-refrigerating infrared focal plane array as well as preparation method and application thereof |
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