CN102495659B - 一种指数温度补偿的低温漂cmos带隙基准电压源 - Google Patents
一种指数温度补偿的低温漂cmos带隙基准电压源 Download PDFInfo
- Publication number
- CN102495659B CN102495659B CN 201110445083 CN201110445083A CN102495659B CN 102495659 B CN102495659 B CN 102495659B CN 201110445083 CN201110445083 CN 201110445083 CN 201110445083 A CN201110445083 A CN 201110445083A CN 102495659 B CN102495659 B CN 102495659B
- Authority
- CN
- China
- Prior art keywords
- circuit
- input end
- temperature compensation
- links
- reference current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title abstract description 5
- 230000000295 complement effect Effects 0.000 title abstract 2
- 229910044991 metal oxide Inorganic materials 0.000 title abstract 2
- 150000004706 metal oxides Chemical class 0.000 title abstract 2
- 238000006243 chemical reaction Methods 0.000 claims abstract description 23
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003278 mimic effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
Images
Landscapes
- Control Of Electrical Variables (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201110445083 CN102495659B (zh) | 2011-12-27 | 2011-12-27 | 一种指数温度补偿的低温漂cmos带隙基准电压源 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201110445083 CN102495659B (zh) | 2011-12-27 | 2011-12-27 | 一种指数温度补偿的低温漂cmos带隙基准电压源 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102495659A CN102495659A (zh) | 2012-06-13 |
CN102495659B true CN102495659B (zh) | 2013-10-09 |
Family
ID=46187488
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 201110445083 Expired - Fee Related CN102495659B (zh) | 2011-12-27 | 2011-12-27 | 一种指数温度补偿的低温漂cmos带隙基准电压源 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102495659B (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102981546B (zh) * | 2012-11-23 | 2015-05-06 | 国民技术股份有限公司 | 指数补偿带隙基准电压源 |
CN104298293B (zh) * | 2013-07-17 | 2016-01-20 | 北京兆易创新科技股份有限公司 | 一种带曲率补偿的带隙基准电压源 |
CN103365331B (zh) * | 2013-07-19 | 2014-12-17 | 天津大学 | 一种二阶补偿基准电压产生电路 |
TW201506577A (zh) * | 2013-08-14 | 2015-02-16 | Ili Technology Corp | 能隙參考電壓電路與其電子裝置 |
CN103744464B (zh) * | 2013-12-20 | 2015-07-29 | 中国科学院微电子研究所 | 一种具有电流补偿的带隙基准电路 |
CN104977968B (zh) * | 2014-04-14 | 2017-01-18 | 北京工业大学 | 一种高阶温度补偿的带隙基准电路 |
CN105388953B (zh) * | 2015-09-21 | 2017-04-05 | 东南大学 | 一种具有高电源抑制比的带隙基准电压源 |
CN105974991B (zh) * | 2016-07-05 | 2017-10-13 | 湖北大学 | 具有高阶温度补偿的低温度系数带隙基准电压源 |
CN107272811B (zh) * | 2017-08-04 | 2018-11-30 | 佛山科学技术学院 | 一种低温度系数基准电压源电路 |
US10795395B2 (en) * | 2018-11-16 | 2020-10-06 | Ememory Technology Inc. | Bandgap voltage reference circuit capable of correcting voltage distortion |
CN111610812B (zh) * | 2019-02-26 | 2022-08-30 | 武汉杰开科技有限公司 | 一种带隙基准电源产生电路及集成电路 |
CN111930172B (zh) * | 2020-09-03 | 2022-04-15 | 武汉第二船舶设计研究所(中国船舶重工集团公司第七一九研究所) | 一种单运放自偏置的共源共栅带隙基准电路 |
CN114265038B (zh) * | 2021-11-22 | 2024-02-09 | 电子科技大学 | 一种具有温度补偿效应的高精度开关式移相单元 |
CN114489222A (zh) * | 2022-02-10 | 2022-05-13 | 重庆邮电大学 | 一种用于电源芯片的带隙基准电路 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7230473B2 (en) * | 2005-03-21 | 2007-06-12 | Texas Instruments Incorporated | Precise and process-invariant bandgap reference circuit and method |
CN101226414B (zh) * | 2008-01-30 | 2012-01-11 | 北京中星微电子有限公司 | 一种动态补偿基准电压的方法以及带隙基准电压源 |
CN101901020A (zh) * | 2010-06-13 | 2010-12-01 | 东南大学 | 基于高阶温度补偿的低温漂cmos带隙基准电压源 |
CN202394144U (zh) * | 2011-12-27 | 2012-08-22 | 东南大学 | 一种指数温度补偿的低温漂cmos带隙基准电压源 |
-
2011
- 2011-12-27 CN CN 201110445083 patent/CN102495659B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN102495659A (zh) | 2012-06-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102495659B (zh) | 一种指数温度补偿的低温漂cmos带隙基准电压源 | |
CN202394144U (zh) | 一种指数温度补偿的低温漂cmos带隙基准电压源 | |
CN102073332B (zh) | 一种输出带低压差线性稳压器的低温度系数cmos带隙基准电路 | |
CN101840240B (zh) | 一种可调式多值输出的基准电压源 | |
CN100478824C (zh) | 输出电压可调式cmos基准电压源 | |
CN101630176B (zh) | 低电压cmos带隙基准电压源 | |
CN102270008B (zh) | 宽输入带曲率补偿的带隙基准电压源 | |
CN104199509B (zh) | 一种用于带隙基准源的温度补偿电路 | |
CN107015595A (zh) | 工作在亚阈区高精度低功耗低电压带隙基准源 | |
CN101901020A (zh) | 基于高阶温度补偿的低温漂cmos带隙基准电压源 | |
CN103365331B (zh) | 一种二阶补偿基准电压产生电路 | |
CN102541133A (zh) | 一种全温度范围补偿的电压基准源 | |
CN104216455B (zh) | 用于4g通信芯片的低功耗基准电压源电路 | |
CN104156025B (zh) | 一种高阶温度补偿基准源 | |
CN108052150B (zh) | 一种带高阶曲率补偿的带隙基准电压源 | |
CN102109871A (zh) | 带隙基准源 | |
CN102981545A (zh) | 一种高阶曲率补偿的带隙基准电压电路 | |
CN103294100A (zh) | 一种补偿电阻温漂系数的基准电流源电路 | |
CN103941792A (zh) | 带隙电压基准电路 | |
CN115877907A (zh) | 一种带隙基准源电路 | |
CN101825912A (zh) | 一种低温度系数高阶温度补偿的带隙基准电压源 | |
CN101833352A (zh) | 高阶补偿带隙基准电压源 | |
CN102809979B (zh) | 一种三阶补偿带隙基准电压源 | |
CN104977968B (zh) | 一种高阶温度补偿的带隙基准电路 | |
CN106155171A (zh) | 线性温度系数补偿的带隙电压基准电路 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20120613 Assignee: JIANGSU ZHILIAN TIANDI TECHNOLOGY CO.,LTD. Assignor: Southeast University Contract record no.: 2014320010019 Denomination of invention: Exponential temperature compensation low-temperature drift complementary metal oxide semiconductor (CMOS) band-gap reference voltage source Granted publication date: 20131009 License type: Exclusive License Record date: 20140303 |
|
LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
EC01 | Cancellation of recordation of patent licensing contract |
Assignee: JIANGSU ZHILIAN TIANDI TECHNOLOGY CO.,LTD. Assignor: Southeast University Contract record no.: 2014320010019 Date of cancellation: 20140911 |
|
LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20170122 Address after: 99 No. 214135 Jiangsu province Wuxi city Wuxi District Linghu Avenue Patentee after: Southeast University Wuxi branch Address before: 99 No. 214135 Jiangsu New District of Wuxi City Linghu Avenue Patentee before: SOUTHEAST University |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131009 |