CN102486972A - Dual-channel radio-frequency MEMS (Micro Electro Mechanical System) switch and manufacturing method thereof - Google Patents
Dual-channel radio-frequency MEMS (Micro Electro Mechanical System) switch and manufacturing method thereof Download PDFInfo
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- CN102486972A CN102486972A CN2011102572425A CN201110257242A CN102486972A CN 102486972 A CN102486972 A CN 102486972A CN 2011102572425 A CN2011102572425 A CN 2011102572425A CN 201110257242 A CN201110257242 A CN 201110257242A CN 102486972 A CN102486972 A CN 102486972A
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Abstract
The invention provides a dual-channel radio-frequency MEMS (Micro Electro Mechanical System) switch and a manufacturing method thereof. The dual-channel radio-frequency MEMS switch comprises a base, a substrate and a movable micro mechanical structure, wherein the base is provided with a plurality of pins; the substrate is arranged on the base; and the movable micro mechanical structure is arranged on the substrate. The substrate is provided with two microwave transmission lines and anchor points; and the movable micro mechanical structure consists of folding beams, a straight beam, upper electrodes, connecting beams and contacts. According to the dual-channel radio-frequency MEMS switch and the manufacturing method thereof, a left pair of driving electrodes and a right pair of driving electrodes which are independent can be utilized for driving single movable micro mechanical structure to realize respective and independent control over the two microwave transmission lines, so as to form multiple transmission modes. Simultaneously, by three means such as disconnection and connection of the switch realized by utilizing the torsion of the folding beams, the control over the thicknesses of the folding beams and shortening for the gap between the driving electrodes, the driving voltage of the dual-channel radio-frequency MEMS switch is lower than 5V. In addition, according to monocrystalline silicon folding beams manufactured by adopting a bonding technology, the warping phenomenon generated by residual stress is eliminated and the rate of finished products is improved.
Description
Technical field
The present invention relates to the RF switch field, particularly relate to a kind of binary channels multipurpose microelectromechanical systems (MEMS) switch and manufacturing approach thereof.
Background technology
Microelectronic mechanical system in radio frequency (MEMS) switch is utilize in the RF component of MEMS technology basis the most a kind of, is normally used in the systems such as wireless communication terminal, signal transmission.Because frequency that the communication technology adopted is increasingly high, than the traditional solid RF switch, the RF MEMS switch have bigger linear response range, lower lossy microwave and with advantage such as IC process compatible.
Typical RF MEMS switch has 3 chief components: i.e. micromechanics module, driver module, and microwave signal transport module.Wherein, the power that said micromechanics module relies on driver module to provide can move at two diverse locations, corresponds respectively to the open position and the make position of switch.When the micromechanics module is in open position, can not transmit through switch with respect to radiofrequency signal, and micromechanics is when partly being in the close position, radiofrequency signal can be transferred in subordinate's circuit through switch.Said driver module significant feature is to convert switch external energy (ordinary circumstance is through applying voltage) forms such as to electrostatic force, piezoelectricity, electromagnetism, electric heating, drives the motion of micromechanics module.Said microwave signal transport module generally has two kinds of forms: open in usual, microwave signal can be passed through at ordinary times, apply bias voltage after, microwave signal is broken off; Normally closed type, microwave signal can not conducting at ordinary times, apply bias voltage after, microwave signal then can be passed through switch.
In the prior art; Traditional RF MEMS switch mainly contains two types on bridge membrane type and beam type switch; For example one Chinese patent application number 200420111505.7 disclosed tandem RF MEMS switches, and one Chinese patent application number 200810102777.3 1 kinds of high-isolation broadband RF mems switch circuit that are applied to low-frequency range.But there is following problem in traditional RF MEMS: first; Traditional RF MEMS switch can only be controlled a microwave transmission line with one even a plurality of micromechanics module, and this type of switch is if to control two or more microwave signal transmission line then be to rely on switch arrays to realize.The second, in the above-mentioned switch, adopt the needed driving voltage of electrostatic force switch driven very high, generally greater than 20V.The 3rd; Above-mentioned switch generally adopts metal as bridge film (movable micro mechanical structure), because the Young's modulus of metal is lower than silicon, and under state-of-the-art, can not produce very thick metal bridge film thickness; Thereby the rigidity of movable micro mechanical structure is reduced, thereby the response time that has increased switch.
Summary of the invention
The shortcoming of prior art in view of the above; The object of the present invention is to provide a kind of binary channels RF MEMS switch and manufacturing approach thereof; To realize that two independent driving electrodes drive single movable mechanical structure about utilization; Can independently control two signal transmission passages separately; That can form multiple transmission mode and utilize movable micro mechanical structure reverses the reduction driving voltage, and simultaneously movable micro mechanical structure adopts single crystal silicon material, can also eliminate residual stress and shorten response time of switch.
For realizing above-mentioned purpose and other relevant purposes, the present invention provides a kind of binary channels RF MEMS switch and manufacturing approach thereof, and wherein, said binary channels RF MEMS switch comprises at least: pedestal, and its periphery has a plurality of pins; Substrate; Be arranged on the said pedestal; The relative both sides of said substrate top surface convex with the first rectangular bottom electrode and second bottom electrode respectively; Vertical outer rim of contiguous said first bottom electrode has first microwave transmission line; Vertical outer rim of contiguous said second bottom electrode has second microwave transmission line, and an outer lateral edges of said first bottom electrode is connected with the first bottom electrode pad, and an outer lateral edges of said second bottom electrode is connected with the second bottom electrode pad; The relative both sides of the outer lateral edges of also contiguous said first bottom electrode and second bottom electrode have first anchor point and second anchor point respectively between said first bottom electrode and second bottom electrode; And said first anchor point is connected with an anchor point pad, and wherein, said first, second bottom electrode pad and anchor point pad are connected with the pin of said pedestal by a metal lead wire respectively; And movable micro mechanical structure; Be arranged on the said substrate; Comprise first and second folded beam with stiff end and movable end; The stiff end of said first and second folded beam is connected with second anchor point with first anchor point respectively; The movable end of said first and second folded beam is connected to vertical both sides of the center of a rood beam; The both lateral sides of said rood beam is connected with first top electrode and corresponding second top electrode that is suspended at the said second bottom electrode upside that correspondence is suspended at the said first bottom electrode upside respectively; Vertical outer rim of said first top electrode is connected with upside that correspondence is suspended at said first microwave transmission line in order to contacting first contact of said first transmission line through first elastic arm, and vertical outer rim of said second top electrode is connected with upside that correspondence is suspended at said second microwave transmission line in order to contact second contact of said second microwave transmission line through second elastic arm.
The present invention also provides a kind of manufacturing approach of binary channels RF MEMS switch; This method may further comprise the steps at least: the substrate that 1) surface insulation is provided; Surface deposition one gold medal layer on it; And through photoetching and corrosion of metals technology that it is graphical, form the regional gold layer of first bottom electrode, second bottom electrode, first microwave transmission line, second microwave transmission line, the first bottom electrode pad, the second bottom electrode pad, anchor point pad and anchor point with upper surface in said substrate; 2) monocrystalline silicon piece is provided; At its lower surface through photoetching and etching process; Make the boss in corresponding said anchor point zone, then produce the insulating barrier of first top electrode, second top electrode, first contact and second contact region through chemical deposition, photoetching and etching process; 3) adopt the surface of metal sputtering, photoetching and corrosion of metals technology boss to make one deck gold layer in the corresponding said anchor point of said monocrystalline silicon piece zone; 4) utilize bonding technology together, and said monocrystalline silicon piece is thinned to predetermined thickness, to prepare binary channels RF MEMS switch chip through reduction process with said monocrystalline silicon piece and substrate bonding; And 5) pedestal with a plurality of pins is provided; Binary channels RF MEMS switch chip after the scribing is fixed on the said pedestal; Technology through routing is connected said first, second microwave transmission line so that said first electrode pad, second electrode pad and anchor point pad are connected with the pin of said pedestal by a metal lead wire respectively with the RF repeating head.
As stated; Binary channels RF MEMS switch of the present invention and manufacturing approach thereof; Two pairs of independent driving electrodes drive (i.e. a movable micro mechanical structure and two pairs of drive electrodes) to single movable mechanical structure about utilization; Realize two microwave signal lines are independently controlled separately, not only can independently control two signal transmission passages separately, form multiple transmission mode; That can also utilize movable micro mechanical structure reverses the reduction driving voltage; In addition, adopt body silicon, also shortened the response time of switch when reducing residual stress as movable micro mechanical structure layer; Moreover; The binary channels RF MEMS switch of manufacturing approach manufacturing of the present invention can be used for producing in batches; Not only make the driving voltage of binary channels RF MEMS switch be lower than 10V; Can also make movable micro mechanical structure reduce the buckling phenomenon that takes place because of residual stress through bonding technology, improve rate of finished products, and then reduced production cost.
Description of drawings
Fig. 1 is shown as the side direction cross-sectional view of pedestal in the binary channels RF MEMS switch of the present invention.
Fig. 2 is shown as the vertical view of substrate in the binary channels RF MEMS switch of the present invention.
Fig. 3 A and Fig. 3 B are shown as the structural representation of microwave transmission line in different execution modes of substrate among the present invention.
Fig. 4 is shown as the vertical view of movable micro mechanical structure in the binary channels RF MEMS switch of the present invention.
Fig. 5 A to Fig. 5 C is shown as the structural representation of folded beam in different execution modes of movable micro mechanical structure among the present invention.
Fig. 6 A and Fig. 6 B are shown as the structural representation of contact in different execution modes of movable micro mechanical structure among the present invention.
Fig. 7 A is shown as the vertical view of binary channels RF MEMS switch chip of the present invention.
Fig. 7 B is shown as the side direction cross-sectional view of binary channels RF MEMS switch chip of the present invention.
Fig. 8 is shown as the side direction cross-sectional view of binary channels RF MEMS switch of the present invention.
Embodiment
Following embodiment further explain technological means of the present invention, but be not in order to limit category of the present invention.
Notice; The appended graphic structure that illustrates of this specification, ratio, size etc.;,, be not all in order to limit the enforceable qualifications of the present invention for those skilled in the art's understanding and reading only in order to cooperate the content that specification disclosed; Event is the technical essential meaning of tool not; The adjustment of the modification of any structure, the change of proportionate relationship or size not influencing under effect that the present invention can produce and the purpose that can reach, all should still drop on disclosed technology contents and get in the scope that can contain.Simultaneously; That is quoted in this specification reaches the term of " " etc. like " upper and lower "; Also be to be merely be convenient to narrate clear, but not in order to limit the enforceable scope of the present invention, the change of its relativeness or adjustment; Under no essence change technology contents, when also being regarded as the enforceable category of the present invention.
The present invention provides a kind of binary channels RF MEMS switch 1, comprises pedestal 11, substrate 12 and movable micro mechanical structure 13.
See also Fig. 1, be shown as the side direction cross-sectional view of pedestal in the binary channels RF MEMS switch of the present invention.As shown in the figure, the periphery of said pedestal 11 has a plurality of pins 111.
See also Fig. 2; Be shown as the vertical view of substrate in the binary channels RF MEMS switch of the present invention; As shown in the figure; Said substrate 12 is arranged on the said pedestal 11, and the upper surface of said substrate 12 is formed with first bottom electrode 121, second bottom electrode 122, first microwave transmission line 123, second microwave transmission line 124, the first bottom electrode pad 125, the second bottom electrode pad 126, first anchor point 127, second anchor point 128 and anchor point pad 129.
In this execution mode, the material of said substrate 12 is a monocrystalline silicon, and the surface of said substrate 12 is formed with insulating barrier 120, and particularly, said insulating barrier 120 for example is SiO
2Layer.But be not limited thereto, in other embodiment, the material of said substrate 12 can also be non-silicon materials such as glass or gallium nitride.
Said first bottom electrode 121 and second bottom electrode 122 are convexly set in the relative both sides of said substrate 12 upper surfaces respectively, and all rectangular structure.Vertical outer rim of said first microwave transmission line, 123 contiguous said first bottom electrodes 121.Vertical outer rim of said second microwave transmission line, 124 contiguous said second bottom electrodes 122; In this execution mode; Said second microwave transmission line 124 is laid with said first microwave transmission line, 123 opposing parallel; In the present embodiment, said first microwave transmission line 123 and second microwave transmission line 124 are microstrip line or co-planar waveguide.
What need to specify is, in the present embodiment, said binary channels RF MEMS switch 1 be a condenser type, and the plain conductor of said first contact 133 of correspondence is continuous physical aspect on said first microwave transmission line 123, shown in Fig. 3 A.The lower surface of said first contact 133 has an insulating barrier 1331.Shown in Fig. 6 A.
But be not limited thereto, in another kind of embodiment, said binary channels RF MEMS switch 1 is a resistance-type, and the physical aspect of the plain conductor of corresponding said first contact 133 for breaking off on said first microwave transmission line 123 is shown in Fig. 3 B.Correspondingly, said first contact 133 lower surfaces have an insulating barrier 1331, and said surface of insulating layer is coated with a metal level 1332.Shown in Fig. 6 B.
See also Fig. 2 again; One outer lateral edges of said first bottom electrode 121 is connected with the first bottom electrode pad 125; One outer lateral edges of said second bottom electrode 122 is connected with the second bottom electrode pad 126; The relative both sides of the outer lateral edges of also contiguous said first bottom electrode 121 and second bottom electrode 122 have first anchor point 127 and second anchor point 128 respectively between said first bottom electrode 121 and second bottom electrode 122, and said first anchor point 127 is connected with an anchor point pad 129.Particularly, first and second anchor point 127,128 of said substrate 11 is fixed on substrate 11 surface insulation layers 120 through the bonding technology of gold silicon bonding or silex glass bonding.
See also Fig. 8, as shown in the figure, said first, second bottom electrode pad 125,126 and anchor point pad 129 are connected with the pin 111 of said pedestal 11 by a metal lead wire 14 respectively.
See also Fig. 4, Fig. 7 A, Fig. 7 B and Fig. 8; As shown in the figure; Said movable micro mechanical structure 13 is arranged on the said substrate 12, and particularly, first and second anchor point 127,128 of said substrate 11 is connected with the stiff end 137,138 of first and second folded beam 135,136 respectively.
Said movable micro mechanical structure 13 comprises the stiff end 137,138 of first and second folded beam 135,136 that is formed on its lower surface; First folded beam 135, second folded beam 136, rood beam 140, the first top electrodes 131, second top electrode 132, first contact 133, second contact 134, first elastic arm 130, second elastic arm 139.
In this execution mode, the stiff end 137,138 of said first and second folded beam 135,136 is boss structure.In this execution mode, said first folded beam 135 and second folded beam 136 are mutual symmetrical structure, and particularly, said first folded beam 135 and second folded beam 136 are symmetrical bow font structure, are shown in Fig. 5 A.But be not limited thereto, in other execution mode, said first folded beam 135 and second folded beam 136 are a few font structures shown in Fig. 5 B, perhaps the zigzag structure shown in Fig. 5 C.
Said first top electrode 131 is connected in a horizontal side of said rood beam 140; And the corresponding upside that is suspended at said first bottom electrode 121; Said second top electrode 132 is connected in the horizontal opposite side of said rood beam 140, and the corresponding upside that is suspended at said second bottom electrode 122.Correspondingly, said first top electrode 131 and second top electrode 132 are just as said first bottom electrode 121 and the also rectangular structure of second bottom electrode 122.
Vertical outer rim of said first top electrode 131 is connected with upside that correspondence is suspended at said first microwave transmission line 123 in order to contacting first contact 133 of said first microwave transmission line 123, and vertical outer rim of said second top electrode 132 is connected with upside that correspondence is suspended at said second microwave transmission line 124 in order to contact second contact 134 of said second microwave transmission line 124.In this execution mode; Said first contact 133 is connected in vertical outer rim of said first top electrode 131 by first elastic arm 130; Said second contact 134 is connected in vertical outer rim of said second top electrode 132 by second elastic arm 139; In order in said first contact 133 or second contact, 134 electrodes when being activated, realize that it is with the contact of microwave transmission line or separate.
In the present embodiment, said binary channels RF MEMS switch 1 is a condenser type, and the lower surface of said first contact 133 has an insulating barrier 1331.Shown in Fig. 6 A.But be not limited thereto, in another kind of embodiment, said first contact 133 lower surfaces have an insulating barrier 1331, and said surface of insulating layer is coated with a metal level 1332.Shown in Fig. 6 B.
Two pairs of independent driving electrodes drove single movable mechanical structure about above-mentioned binary channels RF MEMS switch 1 utilized; Realize two microwave signal lines are independently controlled separately; Not only can independently control two signal transmission passages separately; Form multiple transmission mode, that can also utilize movable micro mechanical structure reverses the reduction driving voltage; In addition, adopt body silicon, also shortened the response time of switch when reducing residual stress widely as movable micro mechanical structure layer.
The present invention also provides a kind of manufacturing approach of binary channels RF MEMS switch; Need to prove; In conjunction with the diagram that above-mentioned binary channels RF MEMS switch is provided, those skilled in the art should understand the principle and the effect of the manufacturing approach of binary channels RF MEMS switch of the present invention through following description.
The manufacturing approach of said binary channels RF MEMS switch may further comprise the steps at least:
At first; The substrate of one surface insulation is provided; Surface deposition one gold medal layer on it, and it is graphical through photoetching and corrosion of metals technology forms the gold layer in first bottom electrode, second bottom electrode, first microwave transmission line, second microwave transmission line, the first bottom electrode pad, the second bottom electrode pad, anchor point pad and anchor point zone with the upper surface in said substrate; In the present embodiment, the material of said substrate is monocrystalline silicon, glass or gallium nitride.In concrete implementation process, when the material of said substrate is monocrystalline silicon, adopt entire substrate direct heat oxygen to form insulating layer of silicon oxide, perhaps chemical deposition silicon nitride or insulating layer of silicon oxide on said substrate face.
In the present embodiment; The manufacture method of said first bottom electrode, second bottom electrode, first microwave transmission line and second microwave transmission line; After adopting sputter or evaporated metal layer, utilize corrosion of metals technology to erode away desired structure, utilize electroplating technology to electroplate out required structure after perhaps adopting the splash-proofing sputtering metal Seed Layer.
Secondly; One monocrystalline silicon piece is provided; Through photoetching and etching process, make the boss in corresponding said anchor point zone at its lower surface, then produce the insulating barrier of first top electrode, second top electrode, first contact and second contact region through chemical deposition, photoetching and etching process; In the present embodiment, the boss of making corresponding said anchor point zone is for adopting the preparation of wet etching or dry etching method.The insulating barrier of said first top electrode, second top electrode, first contact and second contact region is for adopting the preparation of hot oxygen method or chemical deposition.
Then; Adopt the surface of metal sputtering, photoetching and corrosion of metals technology boss to make one deck gold layer in the corresponding said anchor point of said monocrystalline silicon piece zone; In the present embodiment; When the binary channels RF MEMS switch of making is resistance-type, also be included in the step of said first contact, the second contact surface of insulating layer making layer of metal.
Then; Utilize bonding technology together with said monocrystalline silicon piece and substrate bonding; And said monocrystalline silicon piece is thinned to predetermined thickness through reduction process; To prepare binary channels RF MEMS switch chip, in the present embodiment, the bonding technology of said substrate and monocrystalline silicon piece is gold silicon bonding technology, copper tin bonding technology or silex glass anode linkage technology.The upper surface reduction process of said monocrystalline silicon piece is employing KOH solution corrosion or TMAH solution corrosion technology, or adopts abrasive disc attenuated polishing technology.
In concrete implementation process, comprise that also the method for an employing KOH solution corrosion, TMAH solution corrosion or plasma etching discharges the step of movable micro mechanical structure.
At last; Pedestal with a plurality of pins is provided; Binary channels RF MEMS switch chip after the scribing is fixed on the said pedestal; Technology through routing is connected said first, second microwave transmission line so that said first electrode pad, second electrode pad and anchor point pad are connected with the pin of said pedestal by a metal lead wire respectively with the RF repeating head.
In sum; Binary channels RF MEMS switch of the present invention and manufacturing approach thereof; Two independent driving electrodes drive (i.e. a movable micro mechanical structure and two drive electrodes) to single movable mechanical structure about utilization; Realize two microwave signal lines are independently controlled separately, not only can independently control two signal transmission passages separately, form multiple transmission mode; That can also utilize movable micro mechanical structure reverses the reduction driving voltage; In addition, adopt body silicon, also shortened the response time of switch when reducing residual stress as movable micro mechanical structure layer; Moreover; The binary channels RF MEMS switch of manufacturing approach manufacturing of the present invention can be used for producing in batches; Not only make the driving voltage of binary channels RF MEMS switch be lower than 10V; Can also make movable micro mechanical structure reduce the buckling phenomenon that takes place because of residual stress through bonding technology, improve rate of finished products, and then reduced production cost.So the present invention has effectively overcome various shortcoming of the prior art and the tool high industrial utilization.
The foregoing description is illustrative principle of the present invention and effect thereof only, but not is used to limit the present invention.Any be familiar with this technological personage all can be under spirit of the present invention and category, the foregoing description is modified or is changed.Therefore, have common knowledge the knowledgeable in the affiliated such as technical field, must contain by claim of the present invention not breaking away from all equivalence modifications of being accomplished under disclosed spirit and the technological thought or changing.
Claims (19)
1. a binary channels RF MEMS switch is characterized in that, comprises at least:
Pedestal, its periphery has a plurality of pins;
Substrate; Be arranged on the said pedestal; The relative both sides of said substrate top surface convex with the first rectangular bottom electrode and second bottom electrode respectively; Vertical outer rim of contiguous said first bottom electrode has first microwave transmission line; Vertical outer rim of contiguous said second bottom electrode has second microwave transmission line, and an outer lateral edges of said first bottom electrode is connected with the first bottom electrode pad, and an outer lateral edges of said second bottom electrode is connected with the second bottom electrode pad; The relative both sides of the outer lateral edges of also contiguous said first bottom electrode and second bottom electrode have first anchor point and second anchor point respectively between said first bottom electrode and second bottom electrode; And said first anchor point is connected with an anchor point pad, and wherein, said first, second bottom electrode pad and anchor point pad are connected with the pin of said pedestal by a metal lead wire respectively; And
Movable micro mechanical structure; Be arranged on the said substrate; Comprise first and second folded beam with stiff end and movable end; The stiff end of said first and second folded beam is connected with second anchor point with first anchor point respectively; The movable end of said first and second folded beam is connected to vertical both sides of the center of a rood beam; The both lateral sides of said rood beam is connected with first top electrode and corresponding second top electrode that is suspended at the said second bottom electrode upside that correspondence is suspended at the said first bottom electrode upside respectively; Vertical outer rim of said first top electrode is connected with upside that correspondence is suspended at said first microwave transmission line in order to contacting first contact of said first transmission line through first elastic arm, and vertical outer rim of said second top electrode is connected with upside that correspondence is suspended at said second microwave transmission line in order to contact second contact of said second microwave transmission line through second elastic arm.
2. binary channels RF MEMS switch according to claim 1 is characterized in that: the material of said substrate is monocrystalline silicon, glass or gallium nitride.
3. binary channels RF MEMS switch according to claim 2, it is characterized in that: the surface of said substrate is formed with insulating barrier.
4. binary channels RF MEMS switch according to claim 3 is characterized in that: first and second anchor point of said substrate is fixed on the substrate surface insulating barrier through the bonding technology of gold silicon bonding or silex glass bonding.
5. binary channels RF MEMS switch according to claim 1 is characterized in that: said first microwave transmission line and second microwave transmission line are microstrip line or co-planar waveguide.
6. binary channels RF MEMS switch according to claim 5; It is characterized in that: said binary channels RF MEMS switch is a resistance-type; The physical aspect of plain conductor for breaking off of corresponding said first contact and second contact on said first microwave transmission line and second microwave transmission line; The lower surface of said first contact and second contact has an insulating barrier, and said surface of insulating layer is coated with a metal level.
7. binary channels RF MEMS switch according to claim 5; It is characterized in that: said binary channels RF MEMS switch is a condenser type; The plain conductor of corresponding said first contact and second contact is continuous physical aspect on said first microwave transmission line and second microwave transmission line, and the lower surface of said first contact and second contact has an insulating barrier.
8. binary channels RF MEMS switch according to claim 1 is characterized in that: said first folded beam and second folded beam are mutual symmetrical structure.
9. binary channels RF MEMS switch according to claim 8 is characterized in that: said first folded beam and second folded beam are zigzag structure, a few font structure or bow font structure.
10. the manufacturing approach of a binary channels RF MEMS switch is characterized in that, may further comprise the steps at least:
1) substrate of a surface insulation is provided; Surface deposition one gold medal layer on it; And through photoetching and corrosion of metals technology that it is graphical, form the regional gold layer of first bottom electrode, second bottom electrode, first microwave transmission line, second microwave transmission line, the first bottom electrode pad, the second bottom electrode pad, anchor point pad and anchor point with upper surface in said substrate;
2) monocrystalline silicon piece is provided; At its lower surface through photoetching and etching process; Make the boss in corresponding said anchor point zone, then produce the insulating barrier of first top electrode, second top electrode, first contact and second contact region through chemical deposition, photoetching and etching process;
3) adopt the surface of metal sputtering, photoetching and corrosion of metals technology boss to make one deck gold layer in the corresponding said anchor point of said monocrystalline silicon piece zone;
4) utilize bonding technology together, and said monocrystalline silicon piece is thinned to predetermined thickness, to prepare binary channels RF MEMS switch chip through reduction process with said monocrystalline silicon piece and substrate bonding; And
5) pedestal with a plurality of pins is provided; Binary channels RF MEMS switch chip after the scribing is fixed on the said pedestal; Technology through routing is connected said first, second microwave transmission line so that said first electrode pad, second electrode pad and anchor point pad are connected with the pin of said pedestal by a metal lead wire respectively with the RF repeating head.
11. the manufacturing approach of binary channels RF MEMS switch according to claim 10 is characterized in that: in said step 1), the material of said substrate is monocrystalline silicon, glass or gallium nitride.
12. the manufacturing approach of binary channels RF MEMS switch according to claim 11; It is characterized in that: when the material of the substrate in said step 1) is monocrystalline silicon; Adopt entire substrate direct heat oxygen to form insulating layer of silicon oxide, perhaps chemical deposition silicon nitride or insulating layer of silicon oxide on said substrate face.
13. the manufacturing approach of binary channels RF MEMS switch according to claim 10; It is characterized in that: in said step 1); The manufacture method of said first bottom electrode, second bottom electrode, first microwave transmission line and second microwave transmission line; After adopting sputter or evaporated metal layer, utilize corrosion of metals technology to erode away desired structure, utilize electroplating technology to electroplate out required structure after perhaps adopting the splash-proofing sputtering metal Seed Layer.
14. the manufacturing approach of binary channels RF MEMS switch according to claim 10 is characterized in that: in said step 2) in, the boss of making corresponding said anchor point zone is for adopting the preparation of wet etching or dry etching method.
15. the manufacturing approach of binary channels RF MEMS switch according to claim 10; It is characterized in that: in said step 2) in, the insulating barrier of said first top electrode, second top electrode, first contact and second contact region is for adopting the preparation of hot oxygen method or chemical deposition.
16. the manufacturing approach of binary channels RF MEMS switch according to claim 10; It is characterized in that: in said step 3); When the binary channels RF MEMS switch of making is resistance-type, also be included in the step of said first contact, the second contact surface of insulating layer making layer of metal.
17. the manufacturing approach of binary channels RF MEMS switch according to claim 10 is characterized in that: in said step 4), the bonding technology of said substrate and monocrystalline silicon piece is gold silicon bonding technology, copper tin bonding technology or silex glass anode linkage technology.
18. the manufacturing approach of binary channels RF MEMS switch according to claim 10; It is characterized in that: in said step 4); The upper surface reduction process of said monocrystalline silicon piece is employing KOH solution corrosion or TMAH solution corrosion technology, or adopts abrasive disc attenuated polishing technology.
19. the manufacturing approach of binary channels RF MEMS switch according to claim 10; It is characterized in that: in said step 4), comprise that also the method that adopts KOH solution corrosion, TMAH solution corrosion or plasma etching discharges the step of movable micro mechanical structure.
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| CN103604534B (en) * | 2013-11-27 | 2015-04-29 | 东南大学 | Reinforced deflection capacitor type test structure for surface micro-machining residual stress |
| CN108074776A (en) * | 2016-11-14 | 2018-05-25 | 昆山汉唐传感技术有限公司 | A kind of closed type pressure switch and preparation method thereof |
| CN107393767A (en) * | 2017-07-24 | 2017-11-24 | 中北大学 | A kind of T-shaped double cantilever beam formula single-pole double-throw switch (SPDT) |
| CN110127593A (en) * | 2019-04-28 | 2019-08-16 | 中北大学 | A kind of star-like hilted broadsword four-throw RF switch |
| CN110171799A (en) * | 2019-05-29 | 2019-08-27 | 苏州知芯传感技术有限公司 | A kind of mems switch and preparation method thereof |
| CN110171799B (en) * | 2019-05-29 | 2024-04-09 | 苏州知芯传感技术有限公司 | MEMS switch and manufacturing method thereof |
| CN114203487A (en) * | 2021-12-10 | 2022-03-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | Radio frequency MEMS switch and manufacturing method thereof |
| CN114477069A (en) * | 2022-01-19 | 2022-05-13 | 清华大学 | Micro-mechanical film structure of MEMS device and MEMS device |
| CN115295362A (en) * | 2022-07-05 | 2022-11-04 | 清华大学 | Electrostatic bistable RF MEMS switch and preparation method thereof |
| CN115295362B (en) * | 2022-07-05 | 2024-05-28 | 清华大学 | Electrostatic bistable RF MEMS switch and preparation method thereof |
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