CN102484125A - Light emitting devices with embedded void-gap structures through bonding of structured materials on active devices - Google Patents
Light emitting devices with embedded void-gap structures through bonding of structured materials on active devices Download PDFInfo
- Publication number
- CN102484125A CN102484125A CN2010800379427A CN201080037942A CN102484125A CN 102484125 A CN102484125 A CN 102484125A CN 2010800379427 A CN2010800379427 A CN 2010800379427A CN 201080037942 A CN201080037942 A CN 201080037942A CN 102484125 A CN102484125 A CN 102484125A
- Authority
- CN
- China
- Prior art keywords
- layer
- active device
- device structure
- space
- patterned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title description 66
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- 239000004020 conductor Substances 0.000 claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 35
- 239000002184 metal Substances 0.000 claims description 32
- 238000009826 distribution Methods 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 abstract description 31
- 238000000605 extraction Methods 0.000 abstract description 10
- 238000002955 isolation Methods 0.000 abstract description 3
- 230000005693 optoelectronics Effects 0.000 abstract description 2
- 239000003570 air Substances 0.000 abstract 1
- 239000003989 dielectric material Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 239000004038 photonic crystal Substances 0.000 description 40
- 229910002704 AlGaN Inorganic materials 0.000 description 21
- 238000000059 patterning Methods 0.000 description 15
- 230000000694 effects Effects 0.000 description 11
- 239000000284 extract Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 230000003993 interaction Effects 0.000 description 8
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 230000014509 gene expression Effects 0.000 description 6
- 238000007493 shaping process Methods 0.000 description 5
- 239000011800 void material Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 208000012868 Overgrowth Diseases 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 101100492811 Drosophila melanogaster tefu gene Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- GOLXNESZZPUPJE-UHFFFAOYSA-N spiromesifen Chemical compound CC1=CC(C)=CC(C)=C1C(C(O1)=O)=C(OC(=O)CC(C)(C)C)C11CCCC1 GOLXNESZZPUPJE-UHFFFAOYSA-N 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/1017—Waveguide having a void for insertion of materials to change optical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1231—Grating growth or overgrowth details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Led Devices (AREA)
Abstract
A method of fabricating optoelectronic devices with embedded void-gap structures on semiconductor layers through bonding is provided. The embedded void- gaps are fabricated on a semiconductor structure by bonding a patterned layer or slab onto a flat surface, or by bonding a flat layer or slab onto a patterned surface. The void-gaps can be filled with air, gases, conductive or dielectric materials, or other substances, in order to provide better isolation of optical modes from dissipative regions, or better light extraction properties.
Description
The cross reference of related application
The application's case advocates that according to the regulation of 35U.S.C.Section 119 (e) be the U.S. Provisional Application case the 61/238th of co-assigned that reaches common co-pending of " light-emitting device (LIGHT EMITTING DEVICES WITH EMBEDDED AIR GAP STRUCTURES THROUGH BINDING OF STRUCTURED MATERIALS ON ACTIVE DEVICES) that has embedded air gap structure through integrated structure formed material on active device " on August 28th, 2009 by the title that James S Spike (James S.Speck), Cloud CA Wei Siboqie (Claude C.A.Weisbuch) and Larry Ellison De Nadaruisima propose Raleigh (Elison de Nazareth Matioli) application; No. 003 rights and interests; Attorney docket 30794.310-US-P1 (2009-494-1), it is incorporated herein by reference.
The application's case relates to following patent, open case and application case:
United States Patent (USP) the 7th; 723, No. 745, it was issued on May 25th, 2010; Announce as the open case 2008/0128737 of United States Patent (USP) on June 5th, 2008; By Cloud CA Wei Siboqie (Claude C.A.Weisbuch), Ao Ruili pacify JF David (Aurelien J.F.David), James S Spike (James S.Speck) and this Supreme Being literary composition P Danba this (Steven P.DenBaars) the 12/030th, No. 697 on February 13rd, 2008 as the u. s. utility application case and file an application, title is " emission, Vertical Launch, beam shaping distributed Feedback (DFB) laser (HORIZONTAL EMITTING; VERTICLE EMITTING; BEAM SHAPED, DISTRIBUTED FEEDBACK (DFB) LASERS BY GROWTH OVER A PATTERNED SUBSTRATE) of the level through the growth on the patterned substrate ", attorney docket 30794.121-US-C1 (2005-144-2); It is a United States Patent (USP) the 7th; 345, No. 298 the case that continues, United States Patent (USP) the 7th; 345; Announce as the open case 2006/0194359 of United States Patent (USP) on August 31st, 2006 in issue in March in 2008 18 for No. 298, on February 28th, 2005 as u. s. utility application case the 11/067th; Pacifying JF David (Aurelien J.F.David), James S Spike (James S.Speck) and this Supreme Being literary composition P Danba this (Steven P.DenBaars) by Cloud CA Wei Siboqie (Claude C.A.Weisbuch), Ao Ruili No. 957 files an application; Title is " emission, Vertical Launch, beam shaping distributed Feedback (DFB) laser (HORIZONTAL EMITTIN G, VERTICAL EMITTING, BEAM SHAPED; DISTRIBUTED FEEDBACK (DFB) LASERS BY GROWTH OVER A PATTERNED SUBSTRATE) of the level through the growth on the patterned substrate ", attorney docket 2005-144-1 (30794.121-US-01);
U. s. utility application case the 12/822nd; No. 888; It was filed an application by Cloud CA Wei Siboqie (Claude C.A.Weisbuch) and Shuji Nakamura (Shuji Nakamura) on June 24th, 2010; Title is " emission, Vertical Launch, beam shaping distributed Feedback (DFB) laser (HORIZONTAL EMITTING; VERTICAL EMITTING; BEAM SHAPED, DISTRIBUTED FEEDBACK (DFB) LASERS FABRICATED BY GROWTH OVER PATTERNED SUBSTRATE WITH MULTIPLE OVERGROWTH) of level that uses multiple outgrowth to make through the growth on the patterned substrate ", attorney docket 2005-721-3 (30794.143-US-C1); It is a United States Patent (USP) the 7th; 768, No. 024 the case that continues, United States Patent (USP) the 7th; 768; Announce for No. 2007/0125995 as the open case of United States Patent (USP) on June 7th, 2007 on August 3rd, 2010 issue for No. 024, on December 4th, 2006 as u. s. utility application case the 11/633rd; File an application by Cloud CA Wei Siboqie (Claude C.A.Weisbuch) and Shuji Nakamura (Shuji Nakamura) for No. 148; Title is " emission, Vertical Launch, beam shaping distributed Feedback (DFB) laser (IMPROVED HORIZONTAL EMITTING, VERTICAL EMITTING, BEAM SHAPED; DISTRIBUTED FEEDBACK (DFB) LASERS FABRICATED BY GROWTH OVER A PATTERNED SUB STRATE WITH MULTIPLE OVERGROWTH) of improved level that uses multiple outgrowth to make through the growth on the patterned substrate "; Attorney docket 2005-721-2 (30794.143-US-U1), its regulation according to 35U.S.C.Section 119 (e) advocate on December 2nd, 2005 by the title of Cloud CA Wei Siboqie (Claude C.A.Weisbuch) and Shuji Nakamura (Shuji Nakamura) application rights and interests, attorney docket 30794.143-US-P1 (2005-721) for No. the 60/741st, 935, the U.S. Provisional Application case of " emission, Vertical Launch, beam shaping distributed Feedback (DFB) laser (IMPROVED HORIZONTAL EMITTING, VERTICAL EMITTING; BEAM SHAPED; DISTRIBUTED FEEDBACK (DFB) LASERS FABRICATED BY GROWTH OVER A PATTERNED SUBSTRATE WITH MULTIPLE OVERGROWTH) of improved level that uses multiple outgrowth to make " through the growth on the patterned substrate;
U. s. utility application case the 12/834th; No. 453; It was filed an application by Ao Ruili peace JF David (Aurelien J.F.David), Cloud CA Wei Siboqie (Claude C.A.Weisbuch) and this Supreme Being literary composition P Danba this (Steven P.DenBaars) on July 12nd, 2010; Title is " high efficient LED (LED) (HIGH EFFICIENCY LIGHT EMITTING DIODE (LED) WITH OPTIMIZED PHOTONIC CRYSTAL EXTRACTOR) with optimized photonic crystal extractor "; Attorney docket 2005-198-3 (30794.126-US-C1); It is the case that continues of No. the 2009/0305446th, the open case of United States Patent (USP); No. the 2009/0305446th, the open case of United States Patent (USP) was announced on December 10th, 2009; By Ao Ruili pacify JF David (Aurelien J.F.David), Cloud CA Wei Siboqie (Claude C.A.Weisbuch) and this Supreme Being literary composition P Danba this (Steven P.DenBaars) the 12/541st, No. 061 on August 13rd, 2009 as the u. s. utility application case and file an application, title is " high efficient LED (LED) (HIGH EFFICIENCY LIGHT EMITTING DIODE (LED) WITH OPTIMIZED PHOTONIC CRYSTAL EXTRACTOR) with optimized photonic crystal extractor "; Attorney docket 2005-198-2 (30794.126-US-D1); It is a United States Patent (USP) the 7th, 582, No. 910 division; United States Patent (USP) the 7th; Announce for No. 2006/0192217 as the open case of United States Patent (USP) August 31 in 2006 in issue on September 1st, 2009 for 582, No. 910; In February 28 in 2005 as u. s. utility application case the 11/067th; Pacify JF David (Aurelien J.F.David), Cloud CA Wei Siboqie (Claude C.A.Weisbuch) and this Supreme Being literary composition P Danba this (Steven P.DenBaars) by Ao Ruili No. 956 and file an application, title is " high efficient LED (LED) (HIGH EFFICIENCY LIGHT EMITTING DIODE (LED) WITH OPTIMIZED PHOTONIC CRYSTAL EXTRACTOR) with optimized photonic crystal extractor ", attorney docket 2005-198-1 (30794.126-US-01);
U. s. utility application case the 12/793rd; No. 862; It was filed an application by Cloud CA Wei Siboqie (Claude C.A.Weisbuch), Ao Ruili peace JF David (Aurelien J.F.David), James S Spike (James S.Speck) and this Supreme Being literary composition P Danba this (Steven P.DenBaars) on June 4th, 2010; Title is " through the list or the multicolour high efficient LED (LED) (SINGLE OR MULTI-COLOR HIGH EFFICIENCY LIGHT EMITTING DIODE (LED) BY GROWTH OVER A PATTERNED SUBSTRATE) of the growth on the patterned substrate "; Attorney docket 2005-145-3 (30794.122-US-C2); It is a United States Patent (USP) the 7755th; No. 096 the case that continues; United States Patent (USP) the 7755th; Be for No. 096 in issue on July 13rd, 2010, announce for No. 2008/0087909 as the open case of United States Patent (USP) on April 17th, 2008, on October 24th, 2007 as u. s. utility application case the 11/923rd; Pacifying JF David (Aurelien J.F.David), James S Spike (James S.Speck) and this Supreme Being literary composition P Danba this (Steven P.DenBaars) by Cloud CA Wei Siboqie (Claude C.A.Weisbuch), Ao Ruili No. 414 files an application; Title is " through the list or the multicolour high efficient LED (LED) (SINGLE OR MULTI-COLOR HIGH EFFICIENCY LIGHT EMITTING DIODE (LED) BY GROWTH OVER A PATTERNED SUBSTRATE) of the growth on the patterned substrate ", attorney docket 2005-145-2 (30794.122-US-C1), and it is a United States Patent (USP) the 7th; 291; No. 864 the case that continues, United States Patent (USP) the 7th, 291; Issue on November 6th, 2007 for No. 864; Announce as the open case 2006/0202226 of United States Patent (USP) on September 14th, 2006, by Cloud CA Wei Siboqie (Claude C.A.Weisbuch), Ao Ruili pacify JF David (Aurelien J.F.David), James S Spike (James S.Speck) and this Supreme Being literary composition P Danba this (Steven P.DenBaars) the 11/067th, No. 910 on February 28th, 2005 as the u. s. utility application case and file an application; Title is " through the list or the multicolour high efficient LED (LED) (SINGLE OR MULTI-COLOR HIGH EFFICIENCY LIGHT EMITTING DIODE (LED) BY GROWTH OVER A PATTERNED SUBSTRATE) of the growth on the patterned substrate ", attorney docket 2005-145-1 (30794.122-US-01); And
No. the 61/367239th, U.S. Provisional Application case; It is carried Raleigh (Elison de Nazareth Matioli), Cloud CA Wei Siboqie (Claude C.A.Weisbuch) and Ai Weilin L Hu (Evelyn L.Hu) on July 23rd, 2010 by Larry Ellison De Nadaruisima and files an application; Title is " photoelectron device (OPTOELECTRONIC DEVICES WITH EMBEDDED VOID STRUTURES) with embedded gap structure ", attorney docket 2009-493-1 (30794.385-US-P1);
All these application cases are incorporated herein by reference.
Technical field
The present invention relates to structured material and obtain better light-emitting diode and laser with better isolation through high extracting efficiency or active layer and metal electrode; And exactly, relate to the light-emitting device that has through the embedded gap structure of integrated structure formed material on active device.
Background technology
The present invention relates to rely on flush type grating mirror and photonic crystal (PhC) to improve and make semiconductor light-emitting-diode (LED) and laser; And or rather, relate to except that as above-mentioned cross reference patent, open case and application case described in new construction the structure that obtains through the growth on the substrate (it is through these gratings and photonic crystal patterning).These cross reference patents, open case and application case are described the method that is used for low-index layer is incorporated in growth structure, and wherein said low-index layer helps with the light restriction in vertical direction.
As described in the open case of United States Patent (USP) No. 2006/0192217 (it is incorporated herein by reference), to PhC LED, the purpose of said layer is the optical mode that reduces or forbid failing extracting effectively through surperficial PhC.
In typical PhC LED; Resilient coating and active layer are made by GaN usually; The low-refraction limiting layer is made by AlGaN and SQW (QW) is made by GaInN, as described in the open case of United States Patent (USP) No. 2006/0192217 (it is incorporated herein by reference).This structure is different from typical double-heterostructure LED (wherein using two low-index layers in the both sides, active region with the charge carrier in the restricted activity layer).In the open case of United States Patent (USP) No. 2006/0192217 (it is incorporated herein by reference); Only use a low-index layer in the side with respect to the active layer of PhC, this will help to launch and enter into and the strong interactional optical mode that guides takes place said PhC.Such as in double-heterostructure LED use, between active layer and PhC, place another low-index layer and will limit mould, and avoid said mould and PhC overlapping, and so avoid PhC that guided mode is diffracted in the air effectively around said active layer.
Also can obtain limiting layer, as described in the open case of United States Patent (USP) No. 2008/0087909 (it is incorporated herein by reference) through the horizontal extension outgrowth (LEO) on the patterned growth screen based on the material of nitride.Under said situation, the composite bed that comprises shielding material and outgrowth material forms the low-refraction limiting layer and it also can serve as light extraction PhC through suitable design.
Planar in the emitting laser, the interaction that mode of laser is common and the metal top electrodes generation is extremely strong causes propagation loss, and this increases threshold current and reduces power efficiency.The doped semiconductor contact layer also can cause propagation loss; Especially p type doped contact layers (for example; See S You Qieda people's " the IEEE quantum electronics is selected problem periodical (IEEE Journal Of Selected Topics In Quantum Electronics) " such as (S.Uchida) the 9th volume, the 5th phase, in September, 2003/October; The 1252nd page, it is incorporated herein by reference).
Usually, the some optical confinement layer is used for the limit laser mould away from metal top electrodes and contact layer.This type of limiting layer has the low refractive index of refractive index of specific activity layer; And therefore limit light wave a little and enter into active layer, thus cause the stronger interaction (for example reducing the laser threshold electric current) of mode of laser and active material and cause said mould and contact layer and electrode between more a little less than interaction.
Yet, exist some compromise.Thick, high index of refraction (the meaning high band gap) limiting layer (for instance, by the AlGaN material manufacture) that will have the good confinement attribute also have bad conduction of current attribute, cause device resistance and operating voltage to increase.In addition, owing to the lattice mismatch between other material of AlGaN and structure, do not introduce big dislocation density or even the situation of slight crack under, also be difficult to realize the growth of high Al content material.Owing to these restrictions, the current available refractive index of the limiting layer in the laser and thickness have insufficient limitation attribute and it causes the interaction of overflowing of mode of laser and mode of laser and metal electrode.
Can obtain the better limiting layer of laser through the LEO on the patterned growth screen, described in No. the 2006/0194359th, the open case of United States Patent (USP) and No. 2007/0125995 (it is incorporated herein by reference) based on the material of nitride.High index of refraction difference owing between the shielding material (itself even can be air) can obtain extremely good limitation attribute, and the perforation owing to shielding material simultaneously comprises the favorable conductive semi-conducting material and preserves the favorable conductive attribute.
Though can for example LEO be (for example through various growing technologies; See the open case of United States Patent (USP) No. 2006/0194359, No. 2007/0125995, No. 2006/0192217 and No. 2008/0087909; It is incorporated herein by reference) obtain embedded dielectric medium structure; But can obtain the various structures of being paid close attention to through on active LED structure, directly combining the passive structure formed material, as describing in more detail in the application's case.
Summary of the invention
For overcoming above-mentioned restriction of the prior art, and for overcoming conspicuous other restriction that after reading and understanding this specification, will become, the present invention discloses various combination technologies and structure with the structured layer in the acquisition semiconductor device.The pattern of said structured layer can be at random or periodically and with one dimension, two dimension or three-dimensional mode arranges.
A kind of straightforward procedure of on the structuring semi-conducting material, making the photoelectron device with embedded gap structure through combination is provided.Exactly, embedded space is through combination patterning materials plate on smooth semiconductor surface or through combining planar plate to be manufactured on the semiconductor structure on the pattern structure.The space can use air, electric conducting material or dielectric substance to fill and use because of some reasons (the for example better isolation in the zone of the consumption in optical mode and the laser or the better light extraction attribute of LED) can be advantageously used in photoelectron device.
This combines because it only relates to material for being easy to manufacturing approach.But this is plane and the manufacturing approach that is used for embedded gap structure.Can use air or other material to fill the space.Provable a plurality of combination is useful to given application or embodiment.
Description of drawings
With reference now to graphic,, wherein identical reference symbol is represented counterpart in whole specification:
Fig. 1 is the sketch map of the emission mould in the thick active layer PhC LED structure.
Fig. 2 is the sketch map that has the emission mould in the active layer PhC LED structure of AlGaN some optical confinement layer.
Fig. 3 is the sketch map of laser structure with sizes values of active layer and AlGaN some optical confinement layer.
Fig. 4 is a sketch map of incorporating the laser structure that the embedded dielectric pattern layer that serves as the top limiting layer and finally also have the PhC attribute is arranged into.
Fig. 5 is a sketch map of incorporating the laser structure that embedded space characteristic is arranged into, wherein before material being attached to the active semiconductor structure, produces patterned features in the part at said material.
Fig. 6 incorporates the laser that embedded space characteristic is arranged or the sketch map of LED structure into, wherein void pattern in the sub-micron scope so that extract light through diffraction effect.
Fig. 7 incorporates the sketch map that the LED of embedded gap structure structure is arranged into, and wherein the space feature sizes is through being set at micron or bigger so that extract light through the geometric optics effect.
Fig. 8 incorporates the sketch map that the LED of embedded gap structure structure is arranged into, wherein extracts light and has removed substrate through the geometric optics effect.
Fig. 9 incorporates the sketch map that the LED of embedded gap structure structure is arranged into; Wherein extract light through the geometric optics effect; Removed substrate, and in two steps, obtained the space through two depositions or bond material (having the patterning airport) through first of deposition or combination.
Figure 10 incorporates the sketch map that the LED of embedded gap structure structure is arranged into, has wherein removed substrate and then submicron thickness has been arrived in the semiconductor thinning, then on the bottom surface, combines patterning materials.
Figure 11 incorporates the sketch map that the LED of embedded gap structure structure is arranged into, wherein pile up through combination and two or more patterned layers of precision offset to form three-dimensional (3D) periodic structure.
Figure 12 incorporates the sketch map that the LED of embedded gap structure structure is arranged into, wherein comprises the frequency converter material through the patterned layer that combines.
Figure 13 incorporates the sketch map that has from the LED structure of the notion of Figure 11 and 12 into.
Figure 14 is the sketch map of LED structure, and wherein the patterning active device is to produce PhC and on PhC, to combine flatness layer.
Figure 15 is for explaining the flow chart of the process steps of carrying out according to a preferred embodiment of the invention.
Embodiment
In following description, with reference to forming the accompanying drawing of the part of this paper, and wherein show and to put into practice specific embodiment of the present invention by means of explaining to preferred embodiment.Should be understood that and under the situation that does not depart from scope of the present invention, can utilize other embodiment and can make structural change.
General introduction
The present invention describes a kind of method that produces the embedded gap structure (for example space PhC) of photoelectron device, and wherein said gap structure is embedded in one or more layers of the end face that then is attached to the active device structure or bottom surface.Like " space " used herein intention is the space that produces in one or more layers that are illustrated in the structure, gap, hole, perforation etc.
Can use air, gas, electric conducting material, dielectric substance or other material that the space is filled.In addition, said space can comprise polygon, the cylindrical or formed features that distributes spherical characteristic, randomly shaped characteristic, random distribution characteristic, cycle or paracycle.In addition, said space can one dimension (1D), two dimension (2D) or three-dimensional (3D) pattern arrange.Said space also can be through connecting, being formed, formed or both form by connecting hole and joint pin by joint pin by connecting hole continuously.Hereinafter is described these and other aspect of the present invention in more detail.
The operation of the notion of being developed among the present invention relies on refractive index difference.The material that in material layer to be combined, produces void pattern and make resulting space keep sky or use to have the refractive index that is different from material layer or active device structure is filled and can be realized this attribute.
Disclosed method is not to utilize the growth of insert material on some specific region (for example dielectric) to form the space.But, in the present invention because the layer that is combined be incorporated into before the active device structure patterned or because to combine be on the patterned surface of active device structure, to carry out, so during combining, be formed naturally the space.
Though the present invention discloses a kind of straightforward procedure, the structure growth that obtains thus keeps makes that the present invention can the low-cost aspect of making, plane.
Technical description
Than material around, the space that has usually than low-refraction is the desired characteristic in the device (for example LED or laser).It is mainly used in two purposes.First purpose is the some optical confinement than the harmonic(-)mean refractive index that provides owing to the layer that comprises the space.
Fig. 1 is the sketch map of the emission mould in the thick active layer PhC LED structure.LED structure 100 comprises Sapphire Substrate 102, GaN layer 104, quantum well layer 106 and PhC 108.Also show comprise 110,112 and higher modes 114 of two low order modes through radiative guided mode.Because LED 100 does not have void layer, so optical mode 110,112,114 is offed normal on structure 100 widely and low order guided mode 110,112 and light extraction structures (for example PhC 108) generation weak interaction.Exactly, low order guided mode 110,112 has less overlapping with PhC 108, so its efficient of extracting this type of guided mode 110,112 is quite low.
Fig. 2 is the sketch map of the emission mould in having the active layer PhC LED structure of AlGaN some optical confinement layer.LED structure 200 comprises Sapphire Substrate 202, GaN layer 204, AlGaN some optical confinement layer 206, quantum well layer 208 and PhC 210.Also show through radiative guided mode, comprise 212,214 and higher modes 216 of two low order modes.The mould that spontaneous emission excited by from SQW 208 has three types: the low order guided mode 212 that is positioned AlGaN some optical confinement layer 206 below; It has with the less overlapping of PhC 210 and then through extracting mutually with being on duty; It only excites through have bad overlapping SQW 208 with it a little less than but simultaneously; Be positioned the low order mode 214 of AlGaN some optical confinement layer 206 top, strong interaction and therefore will be through extracting effectively will take place with PhC 210 in it; Higher mode 216, it is not subject to AlGaN some optical confinement layer 206 and because of itself and PhC 210 is overlapping good, so it is through extract well.Exactly, the inclusion of AlGaN some optical confinement layer 206 is selected the emission 214 of extracting well through surperficial PhC 210 from SQW.
Fig. 3 is the sketch map of laser structure with sizes values of active layer and AlGaN some optical confinement layer.Laser structure 300 comprises substrate 302, resilient coating 304, GaN n type contact layer 306, bottom metal electrode 308, AlGaN some optical confinement layer 310,312, GaN layer 314, quantum well layer 316, GaN p type contact layer 318 and top metal electrode 320.Also the display optics laser wave 322.
AlGaN some optical confinement layer 310,312 is low-index layer (from the some optical confinement purpose, laser is higher to its demand).Exactly; For example show among Fig. 3; For the plane inner laser; AlGaN some optical confinement layer 310,312 helps to limit the light around luminescent quantum trap 316 because of following two purposes: the interaction between mode of laser and the SQW strengthens, thereby produces big mode gain and therefore reduce threshold current.Mould is through restriction and away from doped contact layers and electrode, thereby reduces the mode propagation loss.
The Available Material of realizing this low-refraction is provided with restriction to accessible some optical confinement attribute.In the system based on GaN, incorporating into of Al receives the strict restriction of metallurgical constraint (under high Al part or big thickness, strain causes that dislocation or slight crack form), therefore causes less refractive index contrast and insufficient some optical confinement.Therefore, the high-index-contrast of being brought by the space is most popular.
Second purpose of low-index layer relies on: when it was patterned, it extracted the ability of light effectively through diffraction effect (PhC extraction) or through the light randomization of repeatedly reflecting under geometrical optics considerations in LED.In laser, this type of pattern can be used for making the chamber mirror, wavelength is selected (for example through distributed Feedback (DFB) laser), or Vertical Launch (the surface emitting plane inner laser device that for example has second order distributed Bragg reflection (DBR) mirror).
Fig. 4 is a sketch map of incorporating the laser structure that the embedded dielectric pattern layer that serves as the top limiting layer and finally also have the PhC attribute is arranged into.Laser structure 400 comprises substrate 402, resilient coating 404, bottom metal electrode 406, AlGaN some optical confinement layer 408, GaN layer 410, quantum well layer 412, dielectric pattern mask 414 and top metal electrode 416.Also the display optics laser wave 418.Patterned layer 414 is the low-index layer of being made by dielectric substance.Because there is not metallurgical constraint, so patterned layer 414 can be thick required as guaranteeing the good optical restriction.
At above-mentioned cross reference patent, open case and application case (promptly; The open case of United States Patent (USP) No. 2006/0194359, No. 2007/0125995 and No. 2006/0192217, it is incorporated herein by reference) in the method for the photoelectron device that obtains to have embedded air or dielectric gap is described.Yet these methods rely on the semiconductor epitaxial outgrowth on the patterned layer (by dielectric or semiconductor manufacturing); Therefore, make this type of device, comprise initial growth step, then be the manufacturing step of pattern-making, and be another growth step subsequently for more complicated process.
The present invention proposes a kind of method through the improved embedded pattern structure of manufacturing through patterning materials being attached to active device.To install from the patterned layer manufacturing according to the method for the invention and decouple, allow the much more flexible design of pattern structure aspect cycle, shape, size and the degree of depth of its material, pattern hole in the filling pattern hole.In addition, active device being separated (and it is walked abreast) with the process steps of patterning materials makes whole process become more sane and more insensitive to the problem in the separation steps.
Fig. 5 wherein produced patterned features in the part at material for according to the sketch map of incorporating the laser structure that embedded space characteristic is arranged into of the present invention before material being attached to the active semiconductor structure.Laser structure 500 comprises substrate 502, resilient coating 504, bottom metal electrode 506, AlGaN some optical confinement layer 508, GaN layer 510, quantum well layer 512, patterned material layer 514 and top metal electrode 516 through combining; Wherein GaN layer 510 can comprise a plurality of doping or the undoped layer that is positioned at quantum well layer 512 tops and below, and quantum well layer 512 itself can comprise pile up (and also be like this for following apparatus) of layer.Also the display optics laser wave 518.Patterned material layer 514 through combining can be attached to the end face or the bottom surface of the semiconductor structure that comprises active layer 512, and also can incorporate into and have as metal layer of electrodes 516.
To the patterned layer that is attached to the active device structure, can consider some configurations.Pattern through the layer that combines can be periodically, quasi periodicity or at random.Periodic lattice will form embedded photon crystal structure, owing to its photonic band-gap attribute with and the diffraction attribute, it possibly be useful.Quasi periodicity pattern (for example Roger Penrose (Penrose) lattice) can increase the direction that diffraction takes place potentially, and this will make the light of photoelectron device launch more omnidirectional.
Also can produce the completely random lattice.Under this situation, make light randomization owing to the light scattering of embedded pattern, thereby increase the light extraction efficiency of photoelectron device through guiding.
Fig. 6 is the laser that embedded space characteristic is arranged or the sketch map of LED structure incorporated into according to the present invention, wherein void pattern in the sub-micron scope so that extract light through diffraction effect.Laser structure 600 comprises substrate 602, resilient coating 604, bottom metal electrode 606, AlGaN some optical confinement layer 608, GaN layer 610, quantum well layer 612, warp combination patterned material layer 614 and top metal electrode 616.Also the display optics laser wave 618.
The cycle of the pattern in the layer 614 also can be depending on the application of being considered and changes.Under the situation of diffraction application (electromagnetic wave diffraction method), the said cycle should be the only about half of of the light wavelength that produces through photoelectron device.For the LED based on GaN, this will be corresponding to the cycle of hundreds of nanometers.
Fig. 7 is according to the sketch map that the LED of embedded gap structure structure is arranged of incorporating into of the present invention; Wherein the space feature sizes is through being set at micron or bigger so that extract light through geometric optics effect (that is, through making the light randomization of propagating via the material of semiconductor prototype structure and warp combination).Laser structure 700 comprises substrate 702, resilient coating 704, bottom metal electrode 706, AlGaN some optical confinement layer 708, GaN layer 710, quantum well layer 712, patterned material layer 714 and top metal electrode 716 through combining.Also show light 718 through emission.The shape of the embedded characteristic in combination patterned material layer 714 is through changing so that other possibility embodiment of the present invention to be described.Exactly, space in the patterned layer 714 or hole can have any kind of shape.For instance, polygon, cylindrical or spherical pore are suitable for as the diffraction object or as the application of the damascene structures of scatterer.Use in light scattering under the situation of (method of geometrical optics), the cycle in embedded space and size can be very big, are approximately several microns or bigger (it is illustrated among Fig. 5 and Fig. 7).
Can produce the some configurations that comprise through the embedded periodic structure that combines patterning materials.
Fig. 8 wherein extracts light and has removed substrate through the geometric optics effect for according to the sketch map that the LED of embedded gap structure structure is arranged of incorporating into of the present invention.Laser structure 800 comprises bottom metal electrode 802, GaN layer 804, quantum well layer 806, comprises the patterned material layer 808 and the top metal electrode 810 through combining of conductive transparent material.Also show light 812 through emission.Thereby this embodiment is illustrated in and removes substrate and avoid any light to be transmitted into the patterned layer 808 of substrate with the end face that is attached to the active device structure after the bottom surface that exposes the active device structure.
Fig. 9 is according to the sketch map that the LED of embedded gap structure structure is arranged of incorporating into of the present invention; Wherein extract light through the geometric optics effect; Wherein removed substrate; And in two steps through two depositions or bond material (deposition or combine to have the ground floor of patterning pore, then on the top of said ground floor deposition or combine the second layer) obtain the space.Laser structure 900 comprises bottom metal electrode 902, GaN layer 904, quantum well layer 906, comprise conductive transparent material through the patterned material layer 908 that combines and be attached to or be deposited on the top metal electrode 910 on the patterned layer 908.This embodiment shows other layer that can on the top of patterned layer 908, combine or grow.
Figure 10 has wherein removed substrate and has made the semiconductor thinning to submicron thickness subsequently for according to the sketch map that the LED of embedded gap structure structure is arranged of incorporating into of the present invention, then combines patterning materials in end face and bottom surface on both.LED structure 1000 comprises bottom metal electrode 1002, the patterned material layer 1004 through combining, GaN layer 1006, quantum well layer 1008, patterned material layer 1010 and top metal electrode 1012 through combining.Also the display optics laser wave 1014.This embodiment shows the thin active part 1006,1008 that on its end face and bottom surface, has some embedded gap structures by means of patterned layer 1004,1010, and the light that wherein said embedded gap structure is used to increase the diffraction of guided mode and/or keep the warp guiding is away from the interface of metal (lossy) contact 1002,1012 through deposition.
In addition, a plurality of patterned layers can combine on the top of each other, thereby form the customized configuration of embedded gap structure.For instance, after removing substrate and thinning structure, can on each side of active device, repeat cohesive process more than twice or twice, thereby be created in the thin layer that end face and bottom surface all have embedded gap structure on both.
Figure 11 is for according to the sketch map that the LED of embedded gap structure structure is arranged of incorporating into of the present invention, wherein two or more patterned layers pile up through combination and through precision offset to form three-dimensional (3D) periodic structure (3D photonic crystal).LED structure 1100 comprises substrate 1102, resilient coating 1104, bottom metal electrode 1106, AlGaN some optical confinement layer 1108, GaN layer 1110, quantum well layer 1112, patterned material layer 1114 and top metal electrode 1116 through combining.Also show light 1118 through emission.In this embodiment, patterned layer 1114 comprises some sublayers of the patterning materials with some spaces, and said space is located with respect to other sublayer separately and squinted to form three-dimensional (3D) photon crystal structure.
Figure 12 wherein comprises the frequency converter material through the patterned layer that combines for according to the sketch map that the LED of embedded gap structure structure is arranged of incorporating into of the present invention.LED structure 1200 comprises bottom metal electrode 1202, GaN layer 1204, quantum well layer 1206, comprises space (representing with square) and light conversion element (with an expression) both patterned material layer 1208 and top metal electrode 1210 through combining.Also show light 1212 through emission.Conversion imports the frequency of the light 1212 in the patterned layer 1208, thereby produces combined color glory, for example white light.Said embedded space strengthens light and both extractions of original transmitted light through conversion.
Figure 13 incorporates the sketch map that has from the LED structure of the notion of Figure 11 and 12 into.LED structure 1300 comprises bottom metal electrode 1302, GaN layer 1304, quantum well layer 1306, comprises space (representing with rectangle) and light conversion element (with an expression) both patterned material layer 1308 and top metal electrode 1310 through combining.Also show light 1312 through emission.
Also will import patterned layer through some light that photoelectron device produces.Can control the amount of the light of the warp guiding in the patterned layer through the object degree of depth in change layer thickness or the pattern (that is, space or hole).Can change the light frequency in the patterned layer, thereby produce the electronic installation (or any other color scheme) of emission white light through guiding.Can in said patterned layer, introduce light conversion activeleg (for example dyestuff, quantum dot, phosphor or based on the material of GaInAlAsP).These elements convert the part of light to other frequency, and said frequency can comprise white in order to produce binary, ternary or any other color scheme through the primary light that is combined to through the device emission.In the layer that combines, the control of the color mixture in the photoelectron device (as illustrated in fig. 11) is provided through the light of guiding and the control of the light quantity (or thickness of patterned layer) that frequency converter (in identical layer) interacts extremely well and warp is guided.Therefore, under this situation, being applied as of the patterned layer that warp combines is dual: its better interaction through light and conversion element strengthens the light conversion, and improves light extraction through diffraction or scattering.
Can through use electric conducting material through the electrical properties of the patterned layer optimization photoelectron device that combines and optical properties both.Patterning materials can be transparent conductor or semiconductor, for example ITO or ZnO.Be that better electric current injects, can between active device structure and the warp patterned layer that combines, place thin conductive layer.Also can wherein on doping semiconductor layer, place electric contact piece with doping semiconductor layer as patterned layer through combining.
Owing to high-index-contrast,, obtain higher optical diffraction when the hole on the patterned layer during for the gap of using fills with air or space.The hole that can other material be used for the filling pattern layer is to improve some attributes of this layer.For example, can use the partially or completely hole of filling pattern layer of dielectric substance, transparent conductive material, metal material, semiconductive material or frequency conversion material.
Can patterning materials be attached to its active region (luminescent layer) and be smooth or patterned semiconductor.The patterning active region means that patterned holes arrives luminescent layer at least.Patterned holes can partially or completely extend through the active region.
Figure 14 is the sketch map according to LED structure of the present invention, and wherein patterning apparatus to be producing PhC, and on PhC, combines flatness layer.LED structure 1400 comprises substrate 1402, resilient coating 1404, bottom metal electrode 1406, AlGaN some optical confinement layer 1408, GaN layer 1410, quantum well layer 1412 and the planarization material layer 1414 through combining.Flatness layer 1414 can be any material, for example conductor, insulator, metal or semiconductor.For instance, can be the patterned layer waiting to be combined on other material that before had been deposited on device or the smooth SiC layer 1414 on the substrate (for example GaN, ZnO or ITO) through the material that combines.Can the electric contact piece in the said structure be manufactured on the either side of said structure.Can one or more layers of any kind of electric conducting material be placed on the material that combines or the below, can be on the end face that installs or bottom surface (or any other surface) through the material that combines.
Process steps
Figure 15 is for explaining the flow chart of the process steps of carrying out according to a preferred embodiment of the invention.Exactly, said process steps comprise embedded pattern structure through improved manufacturing approach.
The step of active device structure is made in frame 1500 expressions.
The step of one deck is at least made in frame 1502 expressions.
Note, concurrently execution in step 1500 and 1502.
Note, can remove substrate to expose the surface of active device structure from the active device structure.In addition, can be after removing substrate and with the surface combination of said layer before the surface of active device structure, one or more of thinning active device structure layer.
The space can use air, gas, electric conducting material or dielectric substance to fill.In addition, the space can have the mean refractive index that is lower than said layer.In addition, said layer can have the mean refractive index that is lower than the active device structure.
The space can comprise polygon, cylindrical or spherical characteristic.In addition, the space can comprise: randomly shaped characteristic, random distribution characteristic, or periodicity or quasi periodicity distribution formed features.In addition, the space can be arranged with one dimension pattern, two-dimensional pattern or three-D pattern.In addition, the space can: through connecting continuously; Form by connecting hole; Form by joint pin; Or by connecting hole and joint pin both form.
The device that frame 1506 expressions use step 1500,1502 and 1504 to make.Exactly; This frame table shows the photoelectron device with embedded gap structure; It comprises the active device structure that is attached at least one layer, and one or more embedded spaces are located to form in (wherein the surface combination of active device structure is to the surface of said layer) wherein at the interface.For instance, photoelectron device can be light-emitting diode (LED) or laser.
List of references
Be incorporated herein by reference below with reference to document:
[1] special flourish (T.A.Truong), LM health Paasche (L.M.Campos) of TA, E horse are carried Raleigh (E.Matioli), I Mei Naier (I.Meinel), CJ robber (C.J.Hawker), CA Wei Siboqie (C.A.Weisbuch) and PM Pai Tefu (P.M.Petroff); " from having the light extraction (Light extraction from GaN-based light emitting diode structures with a noninvasive two-dimensional photonic crystal) based on the light emitting diode construction of GaN of Noninvasive 2 D photon crystal "; " applied physics wall bulletin (Applied Physics Letters) 94; 023101,2009 ".
[2] S You Qieda people such as (S.Uchida), " the IEEE quantum electronics is selected problem periodical (IEEE Journal Of Selected Topics In Quantum Electronics) " the 9th volume, the 5th phase, in September, 2003/October, the 1252nd page.
[3] No. the 2006/0192217th, the open case of United States Patent (USP).
[4] No. the 2008/0087909th, the open case of United States Patent (USP).
[5] No. the 2006/0194359th, the open case of United States Patent (USP).
[6] No. the 2007/0125995th, the open case of United States Patent (USP).
Conclusion
This end that is described in to the preferred embodiments of the present invention.From explanation and purpose of description, presented above description to one or more embodiment of the present invention.It is not planned for exhaustive or limit the invention to the definite form that disclosed.According to above teaching, can make many modifications and change.Hope that scope of the present invention is not subject to this detailed description, and be subject to the claims by the appended claims herein.
Claims (33)
1. a manufacturing has the method for the photoelectron device of embedded gap structure, and it comprises:
The active device structure is attached at least one layer, and one of them or embedded space is formed on said active device structure more than one surface combination are to the surface of said layer at the interface.
2. method according to claim 1, the said surface of the patterned and said active device structure in said surface of wherein said layer is smooth, or the said surface of the patterned and said layer in the said surface of wherein said active device structure is smooth.
3. method according to claim 1, wherein said layer comprises electric conductor, transparent conductor, semiconductor or metal.
4. method according to claim 1, it further comprises and piles up or be deposited in a plurality of additional layers on the said layer that is attached to said active device structure.
5. method according to claim 1 wherein removes substrate to expose the said surface of said active device structure from said active device structure.
6. method according to claim 5 is wherein after removing said substrate and at one or more layers with the said surface combination of the said layer said active device structure of thinning before the said surface of said active device structure.
7. method according to claim 1 is wherein filled said space with air, gas, electric conducting material or dielectric substance.
8. method according to claim 1, wherein said space have than the low mean refractive index of said layer.
9. method according to claim 1, wherein said layer has than the low mean refractive index of said active device structure.
10. method according to claim 1, wherein said space comprise polygon, cylindrical or spherical characteristic.
11. method according to claim 1, wherein said space comprises:
Randomly shaped characteristic,
The characteristic of random distribution, or
The characteristic that cycle or paracycle distribute and be shaped.
12. method according to claim 1, wherein said space is arranged with one dimension pattern, two-dimensional pattern or three-D pattern.
13. method according to claim 1, wherein said space:
Through connection continuously,
Form by connecting hole,
Form by joint pin, or
Both form by connecting hole and joint pin.
14. method according to claim 1 wherein is placed on one or more conductive layers on the bottom surface or end face of said active device structure.
15. method according to claim 1 wherein is placed on one or more conductive layers between said layer and the said active device structure.
16. method according to claim 1, wherein said photoelectron device are LED or laser.
17. a device, it uses method manufacturing according to claim 1.
18. the photoelectron device with embedded gap structure, it comprises:
Be attached to the active device structure of at least one layer, one of them or embedded space is formed on said active device structure more than one surface combination are to the surface of said layer at the interface.
19. device according to claim 18; The said surface of the patterned and said active device structure in said surface of wherein said layer is smooth, or the said surface of the patterned and said layer in the said surface of wherein said active device structure is smooth.
20. device according to claim 18, wherein said layer comprises electric conductor, transparent conductor, semiconductor or metal.
21. device according to claim 18, it further comprises and piles up or be deposited in a plurality of additional layers on the said layer that is attached to said active device structure.
22. device according to claim 18, wherein substrate is removed to expose the said surface of said active device structure from said active device structure.
23. device according to claim 22, wherein after said substrate is removed and at one or more layers of the said surface combination of said layer said active device structure before the said surface of said active device structure by thinning.
24. device according to claim 18, wherein said space is filled with air, gas, electric conducting material or dielectric substance.
25. device according to claim 18, wherein said space have than the low mean refractive index of said layer.
26. device according to claim 18, wherein said layer has than the low mean refractive index of said active device structure.
27. device according to claim 18, wherein said space comprise polygon, cylindrical or spherical characteristic.
28. device according to claim 18, wherein said space comprises:
Randomly shaped characteristic,
The characteristic of random distribution, or
The characteristic that cycle or paracycle distribute and be shaped.
29. device according to claim 18, wherein said space is arranged with one dimension pattern, two-dimensional pattern or three-D pattern.
30. device according to claim 18, wherein said space is:
Through connection continuously,
Form by connecting hole,
Form by joint pin, or
Both form by connecting hole and joint pin.
31. device according to claim 18, one of them or an above conductive layer are placed on the bottom surface or end face of said active device structure.
32. device according to claim 18, one of them or an above conductive layer are placed between said layer and the said active device structure.
33. device according to claim 18, wherein said photoelectron device are LED or laser.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US23800309P | 2009-08-28 | 2009-08-28 | |
| US61/238,003 | 2009-08-28 | ||
| PCT/US2010/047156 WO2011026033A1 (en) | 2009-08-28 | 2010-08-30 | Light emitting devices with embedded void-gap structures through bonding of structured materials on active devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102484125A true CN102484125A (en) | 2012-05-30 |
Family
ID=43628424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010800379427A Pending CN102484125A (en) | 2009-08-28 | 2010-08-30 | Light emitting devices with embedded void-gap structures through bonding of structured materials on active devices |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN102484125A (en) |
| TW (1) | TW201123537A (en) |
| WO (1) | WO2011026033A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111864019A (en) * | 2020-07-10 | 2020-10-30 | 武汉大学 | Flip light-emitting diode with embedded scattering layer and preparation method thereof |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2979034A1 (en) * | 2011-08-12 | 2013-02-15 | St Microelectronics Tours Sas | LED comprises thick portion of first layer made of N-type doped material, second layer made of N-type doped material and is covered with stack that consists of thin layers and is covered with P-type gallium nitride layer, and cavities |
| KR102056414B1 (en) | 2015-09-03 | 2020-01-22 | 마루분 가부시키가이샤 | Deep ultraviolet LED and manufacturing method |
| US11309454B2 (en) | 2018-01-26 | 2022-04-19 | Marubun Corporation | Deep ultraviolet LED and method for producing the same |
| US20200411724A1 (en) * | 2019-06-27 | 2020-12-31 | Lumileds Llc | Nanocone arrays for enhancing light outcoupling and package efficiency |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6455398B1 (en) * | 1999-07-16 | 2002-09-24 | Massachusetts Institute Of Technology | Silicon on III-V semiconductor bonding for monolithic optoelectronic integration |
| US20060194359A1 (en) * | 2005-02-28 | 2006-08-31 | The Regents Of The University Of California | Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrate |
| US20070015357A1 (en) * | 2005-07-15 | 2007-01-18 | Government Of The Usa, As Represented By Secretary Of U.S. Army | Process of adhesive bonding with patternable polymers for producing microstructure devices on a wafer assembly |
| US20070125995A1 (en) * | 2005-12-02 | 2007-06-07 | Weisbuch Claude C | Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers fabricated by growth over a patterned substrate with multiple overgrowth |
| US20080087909A1 (en) * | 2005-02-28 | 2008-04-17 | The Regents Of The University Of California | Single or multi-color high efficiency light emitting diode (led) by growth over a patterned substrate |
| US20080251496A1 (en) * | 2004-02-26 | 2008-10-16 | Shinko Electric Industries Co., Ltd. | Optoelectric composite substrate and method of manufacturing the same |
-
2010
- 2010-08-30 WO PCT/US2010/047156 patent/WO2011026033A1/en active Application Filing
- 2010-08-30 CN CN2010800379427A patent/CN102484125A/en active Pending
- 2010-08-30 TW TW099129136A patent/TW201123537A/en unknown
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6455398B1 (en) * | 1999-07-16 | 2002-09-24 | Massachusetts Institute Of Technology | Silicon on III-V semiconductor bonding for monolithic optoelectronic integration |
| US20080251496A1 (en) * | 2004-02-26 | 2008-10-16 | Shinko Electric Industries Co., Ltd. | Optoelectric composite substrate and method of manufacturing the same |
| US20060194359A1 (en) * | 2005-02-28 | 2006-08-31 | The Regents Of The University Of California | Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrate |
| US20080087909A1 (en) * | 2005-02-28 | 2008-04-17 | The Regents Of The University Of California | Single or multi-color high efficiency light emitting diode (led) by growth over a patterned substrate |
| US20070015357A1 (en) * | 2005-07-15 | 2007-01-18 | Government Of The Usa, As Represented By Secretary Of U.S. Army | Process of adhesive bonding with patternable polymers for producing microstructure devices on a wafer assembly |
| US20070125995A1 (en) * | 2005-12-02 | 2007-06-07 | Weisbuch Claude C | Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers fabricated by growth over a patterned substrate with multiple overgrowth |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111864019A (en) * | 2020-07-10 | 2020-10-30 | 武汉大学 | Flip light-emitting diode with embedded scattering layer and preparation method thereof |
| CN111864019B (en) * | 2020-07-10 | 2021-11-30 | 武汉大学 | Flip light-emitting diode with embedded scattering layer and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011026033A1 (en) | 2011-03-03 |
| TW201123537A (en) | 2011-07-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20120018755A1 (en) | Light emitting devices with embedded void-gap structures through bonding of structured materials on active devices | |
| EP1624499B1 (en) | Photonic crystal semiconductor light emitting device with multiple lattices | |
| KR101468348B1 (en) | Optoelectronic semiconductor chip and method for producing same | |
| US11677049B2 (en) | Optoelectronic device | |
| EP1526583B1 (en) | Photonic crystal light emitting device | |
| US11171267B2 (en) | Process for fabricating an optoelectronic device including photoluminescent pads of photoresist | |
| KR101134191B1 (en) | Surface Plasmon Resonance-based Light Emitting Diode Using Core-Shell Nanoparticles | |
| CN101523623B (en) | Light emitting device including arrayed emitters defined by a photonic crystal | |
| US7700962B2 (en) | Inverted-pyramidal photonic crystal light emitting device | |
| US8421057B2 (en) | Light-emitting devices with improved active-region | |
| US8030664B2 (en) | Light emitting device | |
| WO2006093937A2 (en) | Single or multi-color high efficiency light emitting diode (led) by growth over a patterned substrate | |
| CN102484125A (en) | Light emitting devices with embedded void-gap structures through bonding of structured materials on active devices | |
| JPH05218499A (en) | Quantum-confined semiconductor light-emitting device | |
| KR20180018659A (en) | Micro-LED display without transmission | |
| CN101924322A (en) | Surface plasmon generating apparatus and manufacture method thereof | |
| KR101573095B1 (en) | Optical-electronic component and method for production thereof | |
| WO2008065373A1 (en) | Pyramidal photonic crystal light emitting device | |
| WO2013152231A1 (en) | Light emitting devices with embedded void-gap structures through techniques of closure of voids | |
| US8569737B2 (en) | Broadband light emitting diodes and method for producing same | |
| CN113809215A (en) | Light emitting device, pixel and display including the same, and related manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120530 |