CN102468170A - 一种改善nfet性能的应力层的形成方法 - Google Patents
一种改善nfet性能的应力层的形成方法 Download PDFInfo
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- CN102468170A CN102468170A CN2010105341606A CN201010534160A CN102468170A CN 102468170 A CN102468170 A CN 102468170A CN 2010105341606 A CN2010105341606 A CN 2010105341606A CN 201010534160 A CN201010534160 A CN 201010534160A CN 102468170 A CN102468170 A CN 102468170A
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- nfet
- stressor layers
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- formation method
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
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CN2010105341606A CN102468170A (zh) | 2010-11-05 | 2010-11-05 | 一种改善nfet性能的应力层的形成方法 |
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CN102468170A true CN102468170A (zh) | 2012-05-23 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103839815A (zh) * | 2012-11-21 | 2014-06-04 | 中芯国际集成电路制造(上海)有限公司 | Nmos晶体管的形成方法 |
CN106952810A (zh) * | 2016-01-06 | 2017-07-14 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的制造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1757101A (zh) * | 2003-02-28 | 2006-04-05 | 东京毅力科创株式会社 | 基板处理方法 |
CN101167177A (zh) * | 2005-05-26 | 2008-04-23 | 应用材料股份有限公司 | 制造受应力电晶体结构的集成制程 |
US20080296631A1 (en) * | 2007-05-28 | 2008-12-04 | Neng-Kuo Chen | Metal-oxide-semiconductor transistor and method of forming the same |
CN101320693A (zh) * | 2007-06-06 | 2008-12-10 | 台湾积体电路制造股份有限公司 | 半导体元件的制造方法 |
CN101847661A (zh) * | 2009-03-26 | 2010-09-29 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
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2010
- 2010-11-05 CN CN2010105341606A patent/CN102468170A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1757101A (zh) * | 2003-02-28 | 2006-04-05 | 东京毅力科创株式会社 | 基板处理方法 |
CN101167177A (zh) * | 2005-05-26 | 2008-04-23 | 应用材料股份有限公司 | 制造受应力电晶体结构的集成制程 |
US20080296631A1 (en) * | 2007-05-28 | 2008-12-04 | Neng-Kuo Chen | Metal-oxide-semiconductor transistor and method of forming the same |
CN101320693A (zh) * | 2007-06-06 | 2008-12-10 | 台湾积体电路制造股份有限公司 | 半导体元件的制造方法 |
CN101847661A (zh) * | 2009-03-26 | 2010-09-29 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103839815A (zh) * | 2012-11-21 | 2014-06-04 | 中芯国际集成电路制造(上海)有限公司 | Nmos晶体管的形成方法 |
CN103839815B (zh) * | 2012-11-21 | 2017-09-26 | 中芯国际集成电路制造(上海)有限公司 | Nmos晶体管的形成方法 |
CN106952810A (zh) * | 2016-01-06 | 2017-07-14 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的制造方法 |
CN106952810B (zh) * | 2016-01-06 | 2020-07-10 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的制造方法 |
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