CN102456541A - 锗硅监控片的制备方法及采用该片进行监控的方法 - Google Patents
锗硅监控片的制备方法及采用该片进行监控的方法 Download PDFInfo
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US20020043662A1 (en) * | 2000-06-19 | 2002-04-18 | Shunpei Yamazaki | Semiconductor device |
CN1558260A (zh) * | 2004-01-14 | 2004-12-29 | 中国科学院上海微***与信息技术研究 | 一种基于紫外光直写技术制作波导布拉格光栅的方法 |
US20040266145A1 (en) * | 2003-06-30 | 2004-12-30 | Mike Morse | Methods of forming a high germanium concentration silicon germanium alloy by epitaxial lateral overgrowth and structures formed thereby |
CN1918713A (zh) * | 2004-02-24 | 2007-02-21 | 国际商业机器公司 | 用于与高速CMOS兼容的绝缘体上Ge光电探测器的结构及其制造方法 |
JP2009282322A (ja) * | 2008-05-22 | 2009-12-03 | Konica Minolta Medical & Graphic Inc | 振幅型回折格子の製造方法 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US20020043662A1 (en) * | 2000-06-19 | 2002-04-18 | Shunpei Yamazaki | Semiconductor device |
US20040266145A1 (en) * | 2003-06-30 | 2004-12-30 | Mike Morse | Methods of forming a high germanium concentration silicon germanium alloy by epitaxial lateral overgrowth and structures formed thereby |
CN1558260A (zh) * | 2004-01-14 | 2004-12-29 | 中国科学院上海微***与信息技术研究 | 一种基于紫外光直写技术制作波导布拉格光栅的方法 |
CN1918713A (zh) * | 2004-02-24 | 2007-02-21 | 国际商业机器公司 | 用于与高速CMOS兼容的绝缘体上Ge光电探测器的结构及其制造方法 |
JP2009282322A (ja) * | 2008-05-22 | 2009-12-03 | Konica Minolta Medical & Graphic Inc | 振幅型回折格子の製造方法 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140116 |
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Effective date of registration: 20140116 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |