CN102453867A - Coated member and preparation method thereof - Google Patents
Coated member and preparation method thereof Download PDFInfo
- Publication number
- CN102453867A CN102453867A CN2010105214314A CN201010521431A CN102453867A CN 102453867 A CN102453867 A CN 102453867A CN 2010105214314 A CN2010105214314 A CN 2010105214314A CN 201010521431 A CN201010521431 A CN 201010521431A CN 102453867 A CN102453867 A CN 102453867A
- Authority
- CN
- China
- Prior art keywords
- transparent conductive
- conductive film
- film
- spare
- plated film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a coated member which comprises a base material and a transparent conductive film formed on the surface of the base material. The transparent conductive film is Me-doped AZO film, wherein Me is two or more then two of tin, bismuth, antimony, tantalum and niobium. For the coated member, the transparent conductive film is deposited on the surface of the base material, and a part of Zn2+ are replaced by two or more than two of high-valence Sn4+, Bi4+, Sb5+, Ta5+ and Nb5+ such that free electrons are produced to obtain high conductivity. The transparent conductive film has good stability and can effectively prolong the service life of the coated member. In addition, the invention also provides a manufacturing method of the coated member.
Description
Technical field
The present invention relates to a kind of plated film spare and preparation method thereof.
Background technology
Transparent conductive film has a wide range of applications in fields such as solar cell and liquid-crystal displays owing to have good electrical conductivity and visible light transmissivity.Tin indium oxide (ITO) film is to study at present and most widely used transparent conductive film.Because Sn
4+Can replace In in the lattice
3+The position, produce unbound electron, so ito thin film has higher specific conductivity.Because ito thin film contains the precious metal indium, cost is higher, and the investigator begins to seek other substitute products.
Crude zinc oxide materials is abundant, low price, and nontoxic and stable height, so Al-Doped ZnO (AZO) film is that one of thin-film material of potentiality to be exploited is arranged at present most.After ZnO film mixes Al, Al
3+Ion occupies Zn in the lattice
2+The ionic position forms a monovalence center of positive charge and a unnecessary valence electron, and this valence electron strains at the leass and becomes conduction electrons.Therefore doped with Al causes the increase of clean electronics, and the specific conductivity of ZnO film increases.But plating has the plated film spare of AZO film after using the long period, and the electroconductibility of AZO film can be unstable, thereby causes the AZO film to lose efficacy, and has greatly shortened the work-ing life of plated film spare.
Summary of the invention
In view of this, be necessary to provide a kind of plated film spare that effectively addresses the above problem.
In addition, also be necessary to provide a kind of method for preparing above-mentioned plated film spare.
A kind of plated film spare comprises base material and is formed at the transparent conductive film of substrate surface that this transparent conductive film is the adulterated Al-Doped ZnO film of Me, and wherein Me is two or more in tin, bismuth, antimony, tantalum and the niobium.
A kind of preparation method of plated film spare, it comprises the steps:
Base material is provided;
Form transparent conductive film at substrate surface, this transparent conductive film is the adulterated Al-Doped ZnO film of Me, and wherein Me is two or more in tin, bismuth, antimony, tantalum and the niobium.
Plated film spare according to the invention is at the surface deposition transparent conductive film of base material, and this transparent conductive film is through in Al-Doped ZnO film, introducing in tin, bismuth, antimony, tantalum and the niobium two or more, through the Sn of high valence state
4+, Bi
4+, Sb
5+, Ta
5+And Nb
5+In two or more replace part Zn
2+Thereby, produce unbound electron, obtain higher electric conductivity.This transparent conductive film has satisfactory stability property, can improve the work-ing life of plated film spare effectively.This transparent conductive film also has high light transmittance in addition.
Description of drawings
Fig. 1 is the sectional view of the present invention's one preferred embodiment plated film spare.
The main element nomenclature
Plated film spare 10
Transparent conductive film 13
Embodiment
See also Fig. 1, the present invention's one preferred embodiments plated film spare 10 comprises base material 11, is formed at the transparent conductive film 13 on base material 11 surfaces.
This base material 11 can be glass or pottery.
This transparent conductive film 13 is the adulterated Al-Doped ZnO of Me (AZO) film; Wherein Me can be two or more in tin (Sn), bismuth (Bi), antimony (Sb), tantalum (Ta) and the niobium (Nb); Wherein the quality percentage composition of Al can be 1～5%; The quality percentage composition of adulterated Sn can be 1～4%, and the quality percentage composition of adulterated Sb can be 1～2%, and the quality percentage composition of adulterated Bi can be 1～3%; The quality percentage composition of adulterated Nb can be 1～2%, and the quality percentage composition of adulterated Ta can be 1～2%.
This transparent conductive film 13 can magnetron sputtering or the mode of vapor deposition form.The thickness of this transparent conductive film 13 can be 300～800nm.
The preparation method of the plated film spare 10 of the present invention's one preferred embodiments, it may further comprise the steps:
One base material 11 is provided, and this base material 11 can be glass or pottery.
Argon plasma is carried out on the surface of the base material after above-mentioned processing 11 clean,, and improve base material 11 surfaces and follow-up coating's adhesion with the greasy dirt on further removal base material 11 surfaces.Concrete operations and processing parameter that this plasma body cleans can be: base material 11 is put into the magnetron sputtering coating equipment coating chamber of (figure does not show), this coating chamber is evacuated to 1.0～2.0 * 10
-5Torr; In coating chamber, feeding flow then is the argon gas (purity is 99.999%) of 100～300sccm (standard state ml/min); And apply-100～-300V be biased in base material 11, argon plasma is carried out on base material 11 surfaces cleans, scavenging period is 10～20min.
Adopt sputter one transparent conductive film 13 on the base material 11 of magnetron sputtering method after cleaning through argon plasma, this transparent conductive film 13 can be the adulterated AZO film of Me, and wherein Me can be two or more among Sn, Bi, Sb, Ta and the Nb.This transparent conductive film 13 of sputter carries out in said magnetron sputtering coater.Using alloys target, Al target and the Zn target of two or more composition among Sn, Bi, Sb, Ta and the Nb to be target, is reactant gases with oxygen, and oxygen flow can be 50～200sccm, is working gas with the argon gas, and argon flow amount can be 100～300sccm.During sputter to base material apply-100～-bias voltage of 300V, and to heat the temperature that said coating chamber makes base material 11 be 200～350 ℃, the plated film time can be 30～60min.The thickness of this transparent conductive film 13 can be 300～800nm.
Preferred embodiments plated film spare 10 of the present invention is at the surface deposition transparent conductive film 13 of base material 11, and this transparent conductive film 13 is through in mixing the ZnO film of Al, introducing two or more of Sn, Bi, Sb, Ta and Nb, through the Sn of high valence state
4+, Bi
4+, Sb
5+, Nb
5+And Ta
5+In two or more replace part Zn
2+Thereby, produce unbound electron, obtain higher electric conductivity.This transparent conductive film 13 has satisfactory stability property, can improve the work-ing life of plated film spare 10 effectively.In addition, this transparent conductive film 13 also has high light transmittance.
Claims (11)
1. plated film spare comprises base material and is formed at the transparent conductive film of substrate surface that it is characterized in that: this transparent conductive film is the adulterated Al-Doped ZnO film of Me, and wherein Me is two or more in tin, bismuth, antimony, tantalum and the niobium.
2. plated film spare as claimed in claim 1 is characterized in that: said base material is glass or pottery.
3. plated film spare as claimed in claim 1 is characterized in that: the quality percentage composition of aluminium is 1～5% in the said transparent conductive film.
4. plated film spare as claimed in claim 1 is characterized in that: the quality percentage composition of adulterated tin is 1～4% in the said transparent conductive film.
5. plated film spare as claimed in claim 1 is characterized in that: the quality percentage composition of adulterated antimony is 1～2% in the said transparent conductive film.
6. plated film spare as claimed in claim 1 is characterized in that: the quality percentage composition of adulterated bismuth is 1～3% in the said transparent conductive film.
7. plated film spare as claimed in claim 1 is characterized in that: the quality percentage composition of adulterated niobium is 1～2% in the said transparent conductive film.
8. plated film spare as claimed in claim 1 is characterized in that: the quality percentage composition of adulterated tantalum is 1～2% in the said transparent conductive film.
9. plated film spare as claimed in claim 1 is characterized in that: said transparent conductive film forms with the mode of magnetron sputtering or vapor deposition, and its thickness is 300～800nm.
10. the preparation method of a plated film spare, it comprises the steps:
Base material is provided;
Form transparent conductive film at substrate surface, this transparent conductive film is the adulterated Al-Doped ZnO film of Me, and wherein Me is two or more in tin, bismuth, antimony, tantalum and the niobium.
11. the preparation method of plated film spare as claimed in claim 10; It is characterized in that: the step of said formation transparent conductive film adopts following mode to realize: adopting magnetron sputtering method, use alloys target, aluminium target and the zinc target of two or more composition in tin, bismuth, antimony, tantalum and the niobium to be target, is reactant gases with oxygen; Oxygen flow is 50～200sccm; With the argon gas is working gas, and argon flow amount is 100～300sccm, substrate bias is-100～-300V; It is 200～350 ℃ that heating makes the temperature of base material, and the plated film time is 30～60min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105214314A CN102453867A (en) | 2010-10-27 | 2010-10-27 | Coated member and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105214314A CN102453867A (en) | 2010-10-27 | 2010-10-27 | Coated member and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102453867A true CN102453867A (en) | 2012-05-16 |
Family
ID=46037543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105214314A Pending CN102453867A (en) | 2010-10-27 | 2010-10-27 | Coated member and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102453867A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104630723A (en) * | 2013-11-13 | 2015-05-20 | 宸鸿科技(厦门)有限公司 | Sputtering target, transparent conducting film, manufacturing method of transparent conducting film and touch panel |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1968825A (en) * | 2004-05-24 | 2007-05-23 | 默克专利股份有限公司 | Machine-readable security element for security products |
| CN101051134A (en) * | 2006-04-06 | 2007-10-10 | 株式会社半导体能源研究所 | Liquid crystal display device, semiconductor device, and electronic appliance |
| CN101476111A (en) * | 2009-01-19 | 2009-07-08 | 武汉大学 | Transparent conductive film and preparation thereof |
| JP2009238416A (en) * | 2008-03-26 | 2009-10-15 | Toppan Printing Co Ltd | Substrate with transparent conductive film and its manufacturing method |
| CN101661808A (en) * | 2009-09-15 | 2010-03-03 | 中国科学院上海硅酸盐研究所 | Multi-doping zinc-oxide-base wide-bandgap conducting material and preparation method thereof |
-
2010
- 2010-10-27 CN CN2010105214314A patent/CN102453867A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1968825A (en) * | 2004-05-24 | 2007-05-23 | 默克专利股份有限公司 | Machine-readable security element for security products |
| CN101051134A (en) * | 2006-04-06 | 2007-10-10 | 株式会社半导体能源研究所 | Liquid crystal display device, semiconductor device, and electronic appliance |
| JP2009238416A (en) * | 2008-03-26 | 2009-10-15 | Toppan Printing Co Ltd | Substrate with transparent conductive film and its manufacturing method |
| CN101476111A (en) * | 2009-01-19 | 2009-07-08 | 武汉大学 | Transparent conductive film and preparation thereof |
| CN101661808A (en) * | 2009-09-15 | 2010-03-03 | 中国科学院上海硅酸盐研究所 | Multi-doping zinc-oxide-base wide-bandgap conducting material and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104630723A (en) * | 2013-11-13 | 2015-05-20 | 宸鸿科技(厦门)有限公司 | Sputtering target, transparent conducting film, manufacturing method of transparent conducting film and touch panel |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8349220B2 (en) | Oxide sintered body, manufacturing method therefor, manufacturing method for transparent conductive film using the same, and resultant transparent conductive film | |
| US9493869B2 (en) | Transparent conductive film | |
| US8409694B2 (en) | Coated glass and method for making the same | |
| KR20080066866A (en) | Gallium oxide/zinc oxide sputtering target, method of forming transparent conductive film and transparent conductive film | |
| CN101638772B (en) | Method for preparing fluorine doped tin oxide transparent conductive film | |
| JP2009199986A (en) | Zinc oxide transparent conductive film lamination layer, transparent conductive substrate and device | |
| US20120206789A1 (en) | Coated article and method for making the same | |
| CN100477133C (en) | Near-infrared high-transmission rate and multi-crystal transparent conductive oxide film and making method thereof | |
| US20110100809A1 (en) | Method to manufacture an oxide sputter target comprising a first and second phase | |
| JP4779798B2 (en) | Oxide sintered body, target, and transparent conductive film obtained using the same | |
| CN101413099A (en) | Polycrystal tungsten-doped tin oxide transparent conductive oxide film and preparation thereof | |
| US9704610B2 (en) | Manganese tin oxide based transparent conducting oxide and transparent conductive film and method for fabricating transparent conductive film using the same | |
| CN103171187A (en) | Sandwich type transparent conductive film and preparation method thereof | |
| JPH04272612A (en) | Transparent electrode | |
| CN102453867A (en) | Coated member and preparation method thereof | |
| US8253012B2 (en) | High quality transparent conducting oxide thin films | |
| CN102453868A (en) | Coated piece and manufacturing method thereof | |
| CN102452195A (en) | Coating piece and preparation method thereof | |
| TWI491751B (en) | Coated article and method for making the same | |
| CN105908127A (en) | P-type doped tin dioxide transparent conductive film and preparation method thereof | |
| CN104213090A (en) | Method for preparing molybdenum-doped zinc oxide film by magnetron sputtering method | |
| JP2004168636A (en) | Oxide sintered compact and sputtering target, and method for manufacturing oxide transparent electrode film | |
| KR101627331B1 (en) | Compound for transparent electroconductive thin film, method for forming thin film using the same and transparent electroconductive thin film manufacutred thereby | |
| TWI490353B (en) | Coated article and method for making the same | |
| JP7428753B2 (en) | A laminate having a function as a transparent conductive film, a method for producing the same, and an oxide sputtering target for producing the laminate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C05 | Deemed withdrawal (patent law before 1993) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120516 |