CN102447041A - Light emitting diode package structure and manufacturing method thereof - Google Patents
Light emitting diode package structure and manufacturing method thereof Download PDFInfo
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- CN102447041A CN102447041A CN2010105071664A CN201010507166A CN102447041A CN 102447041 A CN102447041 A CN 102447041A CN 2010105071664 A CN2010105071664 A CN 2010105071664A CN 201010507166 A CN201010507166 A CN 201010507166A CN 102447041 A CN102447041 A CN 102447041A
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Abstract
The invention relates to a light emitting diode package structure, which includes a substrate, a light emitting diode chip and a package layer. The substrate includes a circuit structure. The substrate material is ceramic powder-doped plastic. The light emitting diode chip is attached to the substrate and is electrically connected with the circuit structure. The package layer covers the substrate and covers the light emitting diode chip. The invention also relates to a manufacturing method of the light emitting diode package structure.
Description
Technical field
The present invention relates to a kind of semiconductor package, relate in particular to a kind of package structure for LED and manufacturing approach thereof.
Background technology
General light-emitting diode (Light Emitting Diode; LED) the used baseplate material of encapsulating structure is plastic materials such as PPA or PMMA; Utilize the embedding forming technique that plastics are combined with metal electrode, the cost of manufacture of this structure is lower and technology is simple, is easy to make.Yet the heat-conducting effect of plastics is not good, causes the life-span of element to descend easily.Conductive coefficients such as therefore newer techniques make use pottery or silicon are higher, and material is as substrate preferably for effect, and still the problem of this substrate is that cost is higher, and complex process, is not easy to make.
Summary of the invention
In view of this, be necessary to provide a kind of and have heat-conducting effect preferably, and lower-cost package structure for LED and manufacturing approach thereof.
A kind of package structure for LED comprises substrate, light-emitting diode chip for backlight unit and encapsulated layer.Said substrate comprises circuit structure.Said baseplate material is plastics of mixing ceramic powders.Said light-emitting diode chip for backlight unit is attached on the said substrate, and electrically connects with said circuit structure.Said encapsulated layer is covered on the said substrate, coats said light-emitting diode chip for backlight unit.
A kind of manufacturing approach of package structure for LED may further comprise the steps:
Provide one mix ceramic powders plastic-substrates, said substrate can be divided into a plurality of substrates, each substrate includes circuit structure;
Light-emitting diode chip for backlight unit is arranged on each said substrate, is electrically connected with corresponding said circuit structure;
Encapsulated layer is covered in the said substrate, coat said light-emitting diode chip for backlight unit;
Cut said substrate, form a plurality of package structure for LED.
In package structure for LED and the manufacturing approach; Because baseplate material uses the plastics of mixing ceramic powders, its thermal conduction rate and anti-wear performance all are higher than general plastics greatly, and the cost of plastics is lower; Even mix ceramic powders, its cost is also much lower than ceramic material.Therefore adopt this baseplate material, can access and have heat-conducting effect preferably, and lower-cost package structure for LED.
Description of drawings
Fig. 1 is a kind of package structure for LED cutaway view that embodiment of the present invention provides.
Fig. 2-Fig. 6 is the manufacturing approach sketch map of a kind of package structure for LED of providing of embodiment of the present invention.
Fig. 7 is the manufacturing approach flow chart of a kind of package structure for LED of providing of embodiment of the present invention.
The main element symbol description
Package structure for LED 10
Containing cavity 121
Light-emitting diode chip for backlight unit 13
Encapsulated layer 14
Substrate 15
Embodiment
Below will combine accompanying drawing that the present invention is done further detailed description.
See also Fig. 1, a kind of package structure for LED 10 that embodiment of the present invention provides comprises substrate 11, reflector 12, light-emitting diode chip for backlight unit 13 and encapsulated layer 14.
Said substrate 11 comprises circuit structure 111.Said substrate 11 also comprises the first surface 112 and second surface 113 that is oppositely arranged.Said circuit structure 111 extends to said second surface 113 by said first surface 112.Said circuit structure 111 adopts metal or metal alloy to process.Said substrate 11 is processed by the plastics of the ceramic powders that is mixed with high heat conduction and electric insulation.The diameter of the ceramic powders that is mixed needs preferably to reach Nano grade less than 10 microns, and the content ratio of ceramic powders is 5%-40%, and ceramic powders and plastics are mixed back press mold ejection formation.
Said reflector 12 is arranged on the first surface 112 of said substrate 11, surrounds a containing cavity 121 with said first surface.Said reflector 12 is formed on the method that can adopt transfer moudling or injection moulding on the said substrate 11.The material of said reflector 12 is plastics.Said reflector 12 mainly is used for reflecting emergent ray, increases light emission rate.
Said light-emitting diode chip for backlight unit 13 is attached on the first surface 112 of said substrate 11 in the said containing cavity 121, and particularly, this light-emitting diode chip for backlight unit 13 can be fixed on the first surface 112 through adhesion glue.This light-emitting diode chip for backlight unit 13 electrically connects with said circuit structure 111.What be worth explanation is that this light-emitting diode chip for backlight unit 13 can also utilize the mode of covering crystalline substance (flip-chip) or eutectic (eutectic) to electrically connect said circuit structure 111.
Said encapsulated layer 14 is filled in the said containing cavity 121, and envelopes light-emitting diode chip for backlight unit 13.As said reflector 12 not being set on said substrate 11, then said encapsulated layer 14 directly overlays on the said first surface 112, and envelopes light-emitting diode chip for backlight unit 13.Said encapsulated layer 14 is used to protect influences such as light-emitting diode chip for backlight unit 13 dust, aqueous vapor.The material of encapsulated layer 14 can be silica gel (silicone), epoxy resin (epoxy) or its composition.
See also Fig. 2-Fig. 7, embodiment of the present invention also provides a kind of manufacturing approach of package structure for LED, will be the manufacturing approach that example is explained this package structure for LED with the package structure for LED 10 that embodiment of the present invention provides below.The manufacturing approach of this package structure for LED may further comprise the steps:
Step S201 provides a substrate 15, and said substrate 15 can be divided into a plurality of substrates 11, and each substrate 11 includes circuit structure 111.Said substrate 11 also comprises the first surface 112 and second surface 113 that is oppositely arranged.Said circuit structure 111 extends to said second surface 113 by said first surface 112.Said circuit structure 111 adopts metal or metal alloy to process.Said substrate 11 is processed by the plastics of the ceramic powders that is mixed with high heat conduction and electric insulation.The diameter of the ceramic powders that is mixed needs preferably to reach Nano grade less than 10 microns, and the content ratio of ceramic powders is 5%-40%, and ceramic powders and plastics are mixed back press mold ejection formation.
Step S202 adopts the method for transfer moudling or injection moulding that said reflector 12 is formed on the said substrate 11, and said reflector 12 crosses a containing cavity 121.The material of said reflector 12 is plastics.Said reflector 12 mainly is used for reflecting emergent ray, increases light emission rate.
Step S203 is attached at said light-emitting diode chip for backlight unit 13 on the first surface 112 of said substrate 11 in the said containing cavity 121, and particularly, this light-emitting diode chip for backlight unit 13 can be fixed on the first surface 112 through adhesion glue.This light-emitting diode chip for backlight unit 13 electrically connects with said circuit structure 111.What be worth explanation is that this light-emitting diode chip for backlight unit 13 can also utilize the mode of covering crystalline substance (flip-chip) or eutectic (eutectic) to electrically connect said circuit structure 111.
Step S204 is filled in said encapsulated layer 14 in the said containing cavity 121, and envelopes light-emitting diode chip for backlight unit 13.Said encapsulated layer 14 is used to protect influences such as light-emitting diode chip for backlight unit 13 dust, aqueous vapor.The material of encapsulated layer 14 can be silica gel (silicone), epoxy resin (epoxy) or its composition.In addition, as said reflector 12 not being set on said substrate 11, then said encapsulated layer 14 directly overlays on the said first surface 112, and envelopes light-emitting diode chip for backlight unit 13.
Step S205 cuts said substrate 15, forms a plurality of package structure for LED 10.
In the package structure for LED and manufacturing approach that embodiment of the present invention provides; Because baseplate material uses the plastics of mixing ceramic powders; Its thermal conduction rate and anti-wear performance all are higher than general plastics greatly; And the cost of plastics is lower, even mix ceramic powders, its cost is also much lower than ceramic material.Therefore adopt this baseplate material, obtained having heat-conducting effect preferably, and lower-cost package structure for LED.
It is understandable that, for the person of ordinary skill of the art, can make change and the distortion that other various pictures are answered by technical conceive according to the present invention, and all these change the protection range that all should belong to claim of the present invention with distortion.
Claims (9)
1. a package structure for LED comprises substrate, light-emitting diode chip for backlight unit and encapsulated layer, it is characterized in that; Said substrate comprises circuit structure; Said baseplate material is plastics of mixing ceramic powders, and said light-emitting diode chip for backlight unit is attached on the said substrate, and electrically connects with said circuit structure; Said encapsulated layer is covered on the said substrate, coats said light-emitting diode chip for backlight unit.
2. package structure for LED as claimed in claim 1 is characterized in that: the ceramic powders diameter that mixes in the material of said substrate is less than 10 microns.
3. package structure for LED as claimed in claim 2 is characterized in that: the ceramic powders diameter that mixes in the material of said substrate is a Nano grade.
4. package structure for LED as claimed in claim 1 is characterized in that: the content ratio of the ceramic powders that mixes in the material of said substrate is 5%-40%.
5. package structure for LED as claimed in claim 1 is characterized in that: said substrate forms through the method for press mold ejection formation.
6. package structure for LED as claimed in claim 1 is characterized in that: said package structure for LED also has the reflector around said light-emitting diode chip for backlight unit.
7. the manufacturing approach of a package structure for LED may further comprise the steps:
Provide one mix ceramic powders plastic-substrates, said substrate can be divided into a plurality of substrates, each substrate includes circuit structure;
Light-emitting diode chip for backlight unit is arranged on each said substrate, is electrically connected with corresponding said circuit structure;
Encapsulated layer is covered in the said substrate, coat said light-emitting diode chip for backlight unit;
Cut said substrate, form a plurality of package structure for LED.
8. the manufacturing approach of package structure for LED as claimed in claim 7 is characterized in that: provide after the said substrate, also comprise step: on said substrate, reflector is set, surrounds a containing cavity with said substrate.
9. the manufacturing approach of package structure for LED as claimed in claim 8 is characterized in that: encapsulated layer is covered in the said substrate, fill up said containing cavity simultaneously.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105071664A CN102447041A (en) | 2010-10-14 | 2010-10-14 | Light emitting diode package structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105071664A CN102447041A (en) | 2010-10-14 | 2010-10-14 | Light emitting diode package structure and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN102447041A true CN102447041A (en) | 2012-05-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105071664A Pending CN102447041A (en) | 2010-10-14 | 2010-10-14 | Light emitting diode package structure and manufacturing method thereof |
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| Country | Link |
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| CN (1) | CN102447041A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112054015A (en) * | 2020-08-14 | 2020-12-08 | 东莞智昊光电科技有限公司 | Manufacturing method of high-power LED bracket and high-power LED bracket |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5530050A (en) * | 1994-04-06 | 1996-06-25 | Sulzer Plasma Technik, Inc. | Thermal spray abradable powder for very high temperature applications |
| CN1396667A (en) * | 2001-07-16 | 2003-02-12 | 诠兴开发科技股份有限公司 | Package of LED |
| CN1463047A (en) * | 2002-05-30 | 2003-12-24 | 光颉科技股份有限公司 | Encapsulation method for increasing LED brightness |
-
2010
- 2010-10-14 CN CN2010105071664A patent/CN102447041A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5530050A (en) * | 1994-04-06 | 1996-06-25 | Sulzer Plasma Technik, Inc. | Thermal spray abradable powder for very high temperature applications |
| CN1396667A (en) * | 2001-07-16 | 2003-02-12 | 诠兴开发科技股份有限公司 | Package of LED |
| CN1463047A (en) * | 2002-05-30 | 2003-12-24 | 光颉科技股份有限公司 | Encapsulation method for increasing LED brightness |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112054015A (en) * | 2020-08-14 | 2020-12-08 | 东莞智昊光电科技有限公司 | Manufacturing method of high-power LED bracket and high-power LED bracket |
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Application publication date: 20120509 |