CN102446992A - Thin film solar battery and manufacturing method thereof - Google Patents
Thin film solar battery and manufacturing method thereof Download PDFInfo
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Abstract
The invention relates to a thin film solar battery and a manufacturing method thereof. The thin film solar battery comprises a substrate, a first I-type semiconductor layer, a P-type semiconductor layer and a first electrode, a second I-type semiconductor layer, an N-type semiconductor layer and a second electrode, wherein the first I-type semiconductor layer, the P-type semiconductor layer and the first electrode are positioned at one side of the substrate in sequence, and the concentration of ions doped in the P-type semiconductor layer successively increases from the direction adjacent to the first I-type semiconductor layer to the direction far away from the first I-type semiconductor layer; the second I-type semiconductor layer, the N-type semiconductor layer and the second electrode are positioned at the other side of the substrate in sequence, and the concentration of ions doped in the N-type semiconductor layer successively increases from the direction adjacent to the second I-type semiconductor layer to the direction far away from the second I-type semiconductor layer. The invention has the beneficial effect that not only can the pollution of the P-type semiconductor layers or the N-type semiconductor layers to the I-type semiconductor layers be reduced, but also the larger band gap width can be obtained, and therefore, the photoelectric conversion efficiency is high.
Description
Technical field
The present invention relates to technical field of thin-film solar, relate in particular to a kind of thin-film solar cells and preparation method thereof.
Background technology
Thin-film solar cells is photoelectric material and a kind of solar cell of forming of deposition very thin (several microns to tens microns) on substrates such as glass, metal or plastics.Thin-film solar cells possess under the low light condition still can generate electricity, the production process energy consumption is low and can reduce a series of advantages such as raw material and manufacturing cost significantly, has become hot research in recent years, its market development has a high potential.
Basic film solar battery structure comprises single p-n junction, P-I-N/N-I-P and many knots.Typical unijunction P-N structure comprises P type doped layer and N type doped layer.Unijunction P-N joint solar cell has homojunction and two kinds of structures of heterojunction.P type doped layer and N type doped layer all are made up of analog material (band gap of material equates).Heterojunction structure comprises that the material with different band gap is two-layer at least.The P-I-N/N-I-P structure comprise P type doped layer, N type doped layer and be sandwiched in the P layer and the N layer between intrinsic semiconductor layer (being unadulterated I layer).Multijunction structure comprises a plurality of semiconductor layers with different band gap, and said a plurality of stacked semiconductor layers are on top of each other.In thin-film solar cells, light is absorbed near the P-N knot.The charge carrier of gained diffuses into said P-N knot and is separated by internal electric field thus, thereby generates the electric current that passes said device and external circuit system.
A kind of two-sided light type crystalline silicon solar cell that receives is disclosed in notification number is the Chinese patent of 201699033U, as shown in Figure 1.The said two-sided light type crystalline silicon solar cell that receives comprises successively: front gate line 1, front antireflective coating 2, mix phosphorus layer 3, monocrystalline substrate 4, boron-doping layer 5, back side antireflective coating 6 and back side grid line 7.Said phosphorus layer 3, monocrystalline substrate 4 and the boron-doping layer 5 mixed formed the solar cell body.
Prior art is generally at plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition; PECVD) form above-mentioned solar cell body in the device; And mix in the process of phosphorus layer 3 or boron-doping layer 5 in formation; Keep flow rate of reactive gas constant basically, thereby phosphonium ion or the boron ion in the boron-doping layer 5 mixed in the phosphorus layer 3 evenly distribute.
But there is following defective in above-mentioned technology: when the doping content of the boron ion in phosphonium ion in mixing phosphorus layer 3 or the boron-doping layer 5 is higher, then mixes phosphorus layer 3 or boron-doping layer 5 and can pollute monocrystalline substrate 4, thereby reduce the photoelectric conversion efficiency of thin-film solar cells; When the doping content of the boron ion in phosphonium ion in mixing phosphorus layer 3 or the boron-doping layer 5 is low, then can reduces the band gap width of thin-film solar cells, thereby also can reduce the photoelectric conversion efficiency of thin-film solar cells.Similarly, in other thin-film solar cells, also there is above-mentioned defective.
Therefore, the photoelectric conversion efficiency that how to improve thin-film solar cells becomes those skilled in the art's problem demanding prompt solution.
Summary of the invention
The problem that the present invention solves provides a kind of thin-film solar cells with high-photoelectric transformation efficiency and preparation method thereof.
For addressing the above problem, the invention provides a kind of thin-film solar cells, comprising:
Substrate;
Be positioned at an I type semiconductor layer, p type semiconductor layer and first electrode of said substrate one side successively; Dopant ion concentration is from increase to the direction away from a said I type semiconductor layer near a said I type semiconductor layer successively in the said p type semiconductor layer;
Be positioned at the 2nd I type semiconductor layer, n type semiconductor layer and second electrode of said substrate opposite side successively; Dopant ion concentration is from increase to the direction away from said the 2nd I type semiconductor layer near said the 2nd I type semiconductor layer successively in the said n type semiconductor layer.
Alternatively, said substrate is a N type substrate, and said first electrode is a front electrode, and said second electrode is a backplate; Perhaps, said substrate is a P type substrate, and said first electrode is a backplate, and said second electrode is a front electrode.
Alternatively, the thickness range of said p type semiconductor layer or n type semiconductor layer comprises:
Alternatively, the span of dopant ion concentration comprises in said p type semiconductor layer or the n type semiconductor layer: 1E10/cm
3～1E20/cm
3
Alternatively, said thin-film solar cells also comprises: first tunneling oxide layer between a said substrate and a said I type semiconductor layer; Second tunneling oxide layer between said substrate and said the 2nd I type semiconductor layer.
Alternatively, the material of said first tunneling oxide layer or said second tunneling oxide layer is a silica.
Alternatively, said thin-film solar cells also comprises: first anti-reflecting layer between said p type semiconductor layer and said first electrode; Second anti-reflecting layer between said n type semiconductor layer and said second electrode.
Alternatively, the material of said first anti-reflecting layer or said second anti-reflecting layer is one or more in silicon nitride, zinc sulphide or the titanium dioxide.
In order to address the above problem, the present invention also provides a kind of manufacture method of thin-film solar cells, comprising:
Substrate is provided;
Side at said substrate forms an I type semiconductor layer, p type semiconductor layer and first electrode successively; Dopant ion concentration is from increase to the direction away from a said I type semiconductor layer near a said I type semiconductor layer successively in the said p type semiconductor layer;
Opposite side at said substrate forms the 2nd I type semiconductor layer, n type semiconductor layer and second electrode successively; Dopant ion concentration is from increase to the direction away from said the 2nd I type semiconductor layer near said the 2nd I type semiconductor layer successively in the said n type semiconductor layer.
Alternatively, adopt chemical gaseous phase depositing process to form said p type semiconductor layer and said n type semiconductor layer.
Alternatively, form said p type semiconductor layer and comprise: select for use silane and borane as reacting gas, keep the flow unchanged of silane and increase the flow of borane successively; Perhaps, keep the flow unchanged of borane and reduce the flow of silane successively; Perhaps, increase the flow of borane and reduce the flow of silane successively successively.
Alternatively, form said n type semiconductor layer and comprise: select for use silane and hydrogen phosphide as reacting gas, keep the flow unchanged of silane and increase the flow of hydrogen phosphide successively; Perhaps, keep the flow unchanged of hydrogen phosphide and reduce the flow of silane successively; Perhaps, increase the flow of hydrogen phosphide and reduce the flow of silane successively successively.
Alternatively, the span of dopant ion concentration comprises in the said p type semiconductor layer: 1E10/cm
3～1E20/cm
3The span of dopant ion concentration comprises in the said n type semiconductor layer: 1E10/cm
3～1E20/cm
3
In order to address the above problem, the present invention also provides a kind of thin-film solar cells, comprising:
Substrate;
Be positioned at I type semiconductor layer and p type semiconductor layer on the said substrate successively; Perhaps, be positioned at I type semiconductor layer, p type semiconductor layer and n type semiconductor layer on the said substrate successively;
Dopant ion concentration is from increase to the direction away from said I type semiconductor layer near said I type semiconductor layer successively in the said p type semiconductor layer.
Alternatively, the thickness range of said p type semiconductor layer comprises:
Alternatively, the span of dopant ion concentration comprises in the said p type semiconductor layer: 1E10/cm
3～1E20/cm
3
In order to address the above problem, the present invention also provides a kind of manufacture method of thin-film solar cells, comprising:
Substrate is provided;
On said substrate, form I type semiconductor layer and p type semiconductor layer successively; Perhaps, on said substrate, form I type semiconductor layer, p type semiconductor layer and n type semiconductor layer successively;
Dopant ion concentration is from increase to the direction away from said I type semiconductor layer near said I type semiconductor layer successively in the said p type semiconductor layer.
Alternatively, form said p type semiconductor layer and comprise: select for use silane and borane as reacting gas, keep the flow unchanged of silane and increase the flow of borane successively; Perhaps, keep the flow unchanged of borane and reduce the flow of silane successively; Perhaps, increase the flow of borane and reduce the flow of silane successively successively.
In order to address the above problem, the present invention also provides a kind of thin-film solar cells, comprising:
Substrate;
Be positioned at I type semiconductor layer and n type semiconductor layer on the said substrate successively; Perhaps, be positioned at I type semiconductor layer, n type semiconductor layer and p type semiconductor layer on the said substrate successively;
Dopant ion concentration is from increase to the direction away from said I type semiconductor layer near said I type semiconductor layer successively in the said n type semiconductor layer.
Alternatively, the thickness range of said n type semiconductor layer comprises:
Alternatively, the span of dopant ion concentration comprises in the said n type semiconductor layer: 1E10/cm
3～1E20/cm
3
In order to address the above problem, the present invention also provides a kind of manufacture method of thin-film solar cells, comprising:
Substrate is provided;
On said substrate, form I type semiconductor layer and n type semiconductor layer successively; Perhaps, on said substrate, form I type semiconductor layer, n type semiconductor layer or p type semiconductor layer successively;
Dopant ion concentration is from increase to the direction away from said I type semiconductor layer near said I type semiconductor layer successively in the said n type semiconductor layer.
Alternatively, form said n type semiconductor layer and comprise: select for use silane and hydrogen phosphide as reacting gas, keep the flow unchanged of silane and increase the flow of hydrogen phosphide successively; Perhaps, keep the flow unchanged of hydrogen phosphide and reduce the flow of silane successively; Perhaps, increase the flow of hydrogen phosphide and reduce the flow of silane successively successively.
Compared with prior art; The present invention has the following advantages: provide a kind of and comprised p type semiconductor layer or/and the thin-film solar cells of n type semiconductor layer; Wherein, p type semiconductor layer or/and in the n type semiconductor layer dopant ion concentration from increasing successively to direction away from said I type semiconductor layer near said I type semiconductor layer.
On the one hand, p type semiconductor layer is minimum near the region doping ion concentration of I type semiconductor layer, therefore can reduce the pollution of p type semiconductor layer to the I type semiconductor layer; N type semiconductor layer is also minimum near the region doping ion concentration of I type semiconductor layer, therefore can reduce the pollution of n type semiconductor layer to the I type semiconductor layer.
On the other hand, p type semiconductor layer can be very high away from the region doping ion concentration of I type semiconductor layer, and n type semiconductor layer also can be very high away from the region doping ion concentration of I type semiconductor layer, therefore can increase the band gap width of thin-film solar cells.
In sum, the present invention both can reduce p type semiconductor layer or/and n type semiconductor layer for the pollution of I type semiconductor layer, also can increase band gap width, finally can improve the photoelectric conversion efficiency of thin-film solar cells.
Description of drawings
Fig. 1 is a kind of two-sided structural representation that receives light type crystalline silicon solar cell in the prior art;
Fig. 2 is the schematic flow sheet of the manufacture method of thin-film solar cells in the embodiment of the invention one;
Fig. 3 to Fig. 9 is the sketch map of the manufacture method of thin-film solar cells in the embodiment of the invention one;
Figure 10 is a kind of concrete sketch map of dopant ion concentration in p type semiconductor layer and the n type semiconductor layer in the embodiment of the invention one;
Figure 11 is the another kind of concrete sketch map of dopant ion concentration in p type semiconductor layer and the n type semiconductor layer in the embodiment of the invention one;
Figure 12 is the structural representation of thin-film solar cells in the embodiment of the invention two;
Figure 13 is the structural representation of thin-film solar cells in the embodiment of the invention three;
Figure 14 is the structural representation of thin-film solar cells in the embodiment of the invention four;
Figure 15 is the structural representation of thin-film solar cells in the embodiment of the invention five.
Embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
Set forth a lot of details in the following description so that make much of the present invention, but the present invention can also adopt the alternate manner that is different from here to implement, so the present invention does not receive the restriction of following disclosed specific embodiment.
Said as the background technology part, p type semiconductor layer and n type semiconductor layer all are even doping in the prior art.In order to reduce pollution, need to reduce the dopant ion concentration of p type semiconductor layer and n type semiconductor layer to the I type semiconductor layer; And, need improve the dopant ion concentration of p type semiconductor layer and n type semiconductor layer again in order to improve band gap width.But pollution and the less photoelectric conversion efficiency of thin-film solar cells that all can cause of band gap width to the I type semiconductor layer are lower.
To above-mentioned defective, the invention provides a kind of thin-film solar cells and preparation method thereof.Wherein, In p type semiconductor layer or the n type semiconductor layer in the nearest zone of I type semiconductor layer dopant ion concentration minimum; Dopant ion concentration is the highest in I type semiconductor layer zone farthest; The present invention both can reduce p type semiconductor layer or/and n type semiconductor layer for the pollution of I type semiconductor layer, also can increase band gap width, finally can improve the photoelectric conversion efficiency of thin-film solar cells.
Embodiment one
With reference to shown in Figure 2, present embodiment provides a kind of manufacture method of thin-film solar cells, comprising:
Step S11 provides substrate;
Step S12 forms an I type semiconductor layer, p type semiconductor layer and first electrode successively in a side of said substrate; Dopant ion concentration is from increase to the direction away from a said I type semiconductor layer near a said I type semiconductor layer successively in the said p type semiconductor layer;
Step S13 forms the 2nd I type semiconductor layer, n type semiconductor layer and second electrode successively at the opposite side of said substrate; Dopant ion concentration is from increase to the direction away from said the 2nd I type semiconductor layer near said the 2nd I type semiconductor layer successively in the said n type semiconductor layer.
P type semiconductor layer and the n type semiconductor layer of present embodiment through gradual change type is set; Both can reduce p type semiconductor layer for the pollution of the pollution of an I type semiconductor layer or n type semiconductor layer for the 2nd I type semiconductor layer; Also can increase band gap width, therefore can improve the photoelectric conversion efficiency of thin-film solar cells.
Present embodiment is an example to form amorphous silicon thin-film solar cell, that is: p type semiconductor layer is a P type amorphous silicon layer, and n type semiconductor layer is a N type amorphous silicon layer, and the I type semiconductor layer is an I type amorphous silicon layer.Said thin-film solar cells can also be a microcrystalline silicon film solar cell (be that p type semiconductor layer is a P type microcrystal silicon layer, n type semiconductor layer is a N type microcrystal silicon layer, and the I type semiconductor layer is an I type microcrystal silicon layer) etc., and it does not limit protection scope of the present invention.
At first, with reference to shown in Figure 3, substrate 100 is provided.
Said substrate 100 can be the material of insulation such as glass substrate, metal substrate or plastic base and printing opacity, and it is known for those skilled in the art, so should not limit protection scope of the present invention at this.Substrate described in the present embodiment 100 is metallurgical grade silicon (MG-Si) substrate, thereby can significantly reduce the production cost of thin-film solar cells.
Said substrate 100 can be N type substrate, and then: first electrode is a front electrode, and second electrode is a backplate; Said substrate 100 also can be P type substrate, and then: first electrode is a backplate, and second electrode is a front electrode.
Substrate described in the present embodiment 100 is a n type single crystal silicon.
Need to prove that present embodiment can also clean said substrate 100 before substrate 100 is provided,, thereby avoids the impurity effect Solar cell performance on the substrate 100 with the impurity on the removal substrate 100.
Preferably, in order to reduce surface state concentration, and then reduce to wear then electric current, can also form first tunneling oxide layer 710 and second tunneling oxide layer 720 respectively at the upper surface and the lower surface of said substrate 100.
Wherein, said first tunneling oxide layer 710 and second tunneling oxide layer 720 can adopt low thermal oxidation technology or wet oxidation process to form.
Particularly; The material of said first tunneling oxide layer 710 and second tunneling oxide layer 720 can be silica, and its thickness range can comprise:
as:
or
Then, with reference to shown in Figure 4, form an I type amorphous silicon layer 210 at the upper surface of said first tunneling oxide layer 710.
Wherein, the thickness range of a said I type amorphous silicon layer 210 can comprise
like
or
The formation technology of a said I type amorphous silicon layer 210 is known for those skilled in the art, repeats no more at this.
Then, with reference to shown in Figure 5, at the upper surface formation P of a said I type amorphous silicon layer 210 type amorphous silicon layer 300.Wherein, the direction of arrow among Fig. 5 representes that respectively dopant ion concentration increases from low to high successively.
Present embodiment can adopt any one chemical gaseous phase depositing process to form said P type amorphous silicon layer 300.Particularly, can adopt pecvd process to form said P type amorphous silicon layer 300.
Dopant ion in the said P type amorphous silicon layer 300 can comprise one or more in boron, gallium, indium and the aluminium.In the present embodiment in the P type amorphous silicon layer 300 dopant ion be boron.
Particularly, can select silane (as: SiH for use
4) and borane (as: B
2H
6) as reacting gas.In the process that forms P type amorphous silicon layer 300, can increase the flow of borane gas successively, the flow of silane gas remains unchanged; Perhaps, keep the flow unchanged of borane gas, reduce the flow of silane gas successively; Perhaps, increase the flow of borane gas successively, reduce the flow of silane gas simultaneously successively.In a word, the doping content of boron ion being increased successively gets final product.
Said flow rate of reactive gas can be evenly changes continuously, also can inhomogeneous continuous variation, thus the doping content of said boron ion can even variation, also can inhomogeneously change.
Wherein, the thickness range of said P type amorphous silicon layer 300 can comprise
like
or
The span of boron ion concentration can comprise in the type of P described in the present embodiment amorphous silicon layer 300: 1E10/cm
3～1E20/cm
3, as: the boron ion concentration that contacts with an I type amorphous silicon layer 210 upper surfaces is 1E10/cm
3, the boron ion concentration that is positioned at the zone, the top is 1E20/cm
3, the boron ion concentration that is positioned at P type amorphous silicon layer 300 centre positions is 1E15/cm
3
Then, with reference to shown in Figure 6, form the 2nd I type amorphous silicon layer 220 at the lower surface of said second tunneling oxide layer 720.
Wherein, the thickness range of said the 2nd I type amorphous silicon layer 220 can comprise
like
or
The formation technology of said the 2nd I type amorphous silicon layer 220 is known for those skilled in the art, repeats no more at this.
Need to prove that present embodiment can form an I type amorphous silicon layer 210 and the 2nd I type amorphous silicon layer 220 simultaneously, thereby can save step, reduces cost.
The thickness of a said I type amorphous silicon layer 210 and the 2nd I type amorphous silicon layer 220 can be identical, also can be different.
Then, with reference to shown in Figure 7, at the lower surface formation N of said the 2nd I type amorphous silicon layer 220 type amorphous silicon layer 400.Wherein, the direction of arrow among Fig. 7 representes that respectively dopant ion concentration increases from low to high successively.
Present embodiment can adopt any one chemical gaseous phase depositing process to form said N type amorphous silicon layer 400.Particularly, can adopt pecvd process to form said N type amorphous silicon layer 400.
Said N type amorphous silicon layer 400 can comprise one or more in phosphorus, arsenic and the antimony.In the present embodiment in the N type amorphous silicon layer 400 dopant ion be phosphorus.
Particularly, can select silane (as: SiH for use
4) and hydrogen phosphide (as: PH
3) as reacting gas.In the process that forms N type amorphous silicon layer 400, can increase the flow of phosphine gas successively, the flow of silane gas remains unchanged; Perhaps, keep the flow unchanged of phosphine gas, reduce the flow of silane gas successively; Perhaps, increase the flow of phosphine gas successively, reduce the flow of silane gas simultaneously successively.In a word, the doping content of phosphonium ion being increased successively gets final product.
Said flow rate of reactive gas can be evenly changes continuously, also can inhomogeneous continuous variation, thus the doping content of said phosphonium ion can even variation, also can inhomogeneously change.
Wherein, the thickness range of said N type amorphous silicon layer 400 can comprise
like
or
The span of phosphate ion concentration can comprise in the type of N described in the present embodiment amorphous silicon layer 400: 1E10/cm
3～1E20/cm
3, as: the phosphate ion concentration that contacts with the 2nd I type amorphous silicon layer 220 lower surfaces is 1E10/cm
3, the phosphate ion concentration that is positioned at lower zone is 1E20/cm
3, the phosphate ion concentration that is positioned at N type amorphous silicon layer 400 centre positions is 1E15/cm
3
The thickness of said P type amorphous silicon layer 300 and N type amorphous silicon layer 400 can be identical, also can be different.
Then, with reference to shown in Figure 8, form first anti-reflecting layer 510 at the upper surface of said P type amorphous silicon layer 300, and form second anti-reflecting layer 520 at the lower surface of said N type amorphous silicon layer 400.
Present embodiment is before forming first anti-reflecting layer 510 or second anti-reflecting layer 520; Can also adopt thermal oxidation technology formation one deck thickness range to be positioned at the silicon dioxide (not shown) of
at the upper surface of P type amorphous silicon layer 300 or the lower surface of N type amorphous silicon layer 400 earlier, thereby can further reduce the minority carrier surface recombination.Because adopt thermal oxidation technology to form in the process of silicon dioxide, can effectively remove the interstitial defect of silicon face, thus passivation unsaturation dangling bonds.
Present embodiment can adopt the methods such as evaporation of PECVD, magnetron sputtering or electron beam to form first anti-reflecting layer 510 and second anti-reflecting layer 520.The material of said first anti-reflecting layer 510 and second anti-reflecting layer 520 can be in silicon nitride, zinc sulphide or the titanium dioxide one or more; Its thickness range can comprise that
said first anti-reflecting layer 510 and second anti-reflecting layer 520 except antireflecting effect, can also play the effect of passivated surface.
Need to prove that present embodiment can also only form first anti-reflecting layer 510 or second anti-reflecting layer 520, also can not form first anti-reflecting layer 510 and second anti-reflecting layer 520.
At last, with reference to shown in Figure 9, at the upper surface formation front electrode 610 of said first anti-reflecting layer 510, in the lower surface formation backplate 620 of said second anti-reflecting layer 520.
The concrete technology that forms front electrode 610 and backplate 620 is known for those skilled in the art, repeats no more at this.
The doping content of boron ion and phosphonium ion all is a graded profile in the present embodiment, and is concrete with reference to shown in Figure 10.On the one hand, P type amorphous silicon layer is near the minimum (as: 1E10/cm of region doping ion concentration of an I type amorphous silicon layer
3), therefore can reduce of the pollution of P type amorphous silicon layer to an I type amorphous silicon layer, N type amorphous silicon layer is near the also minimum (as: 1E10/cm of region doping ion concentration of the 2nd I type amorphous silicon layer
3), therefore can reduce of the pollution of N type amorphous silicon layer to the 2nd I type amorphous silicon layer.On the other hand, P type amorphous silicon layer can very high (as: 1E20/cm away from the region doping ion concentration of an I type amorphous silicon layer
3), N type amorphous silicon layer also can very high (as: 1E20/cm away from the region doping ion concentration of the 2nd I type amorphous silicon layer
3), therefore can increase the band gap width of amorphous silicon thin-film solar cell.Finally can improve the photoelectric conversion efficiency of thin-film solar cells.
Substrate is a N type substrate in the foregoing description, and first electrode is a front electrode, and second electrode is a backplate.
When substrate is a P type substrate, first electrode is a backplate, when second electrode is front electrode, with reference to shown in Figure 11, at this moment, can improve the photoelectric conversion efficiency of thin-film solar cells equally.
In other embodiments of the invention, the change curve of said dopant ion concentration can also be straight line or other continually varying curves, and it does not limit protection scope of the present invention.
The thin-film solar cells that adopts the present embodiment method to make can comprise:
Substrate;
Be positioned at first tunneling oxide layer, an I type semiconductor layer, p type semiconductor layer, first anti-reflecting layer, first electrode of said substrate one side successively; Dopant ion concentration is from increase to the direction away from a said I type semiconductor layer near a said I type semiconductor layer successively in the said p type semiconductor layer;
Be positioned at second tunneling oxide layer, the 2nd I type semiconductor layer, n type semiconductor layer, second anti-reflecting layer and second electrode of said substrate opposite side successively; Dopant ion concentration is from increase to the direction away from said the 2nd I type semiconductor layer near said the 2nd I type semiconductor layer successively in the said n type semiconductor layer.
Wherein, the thickness range of said p type semiconductor layer or n type semiconductor layer comprises:
Wherein, the span of dopant ion concentration comprises in said p type semiconductor layer or the n type semiconductor layer: 1E10/cm
3～1E20/cm
3
Wherein, the material of said first tunneling oxide layer or said second tunneling oxide layer is a silica.
Wherein, the material of said first anti-reflecting layer or said second anti-reflecting layer is one or more in silicon nitride, zinc sulphide or the titanium dioxide.
Embodiment two
Present embodiment provides a kind of manufacture method of thin-film solar cells, comprising:
Substrate is provided;
On said substrate, form I type semiconductor layer and p type semiconductor layer successively, dopant ion concentration is from increase to the direction away from said I type semiconductor layer near said I type semiconductor layer successively in the said p type semiconductor layer.
Wherein, said substrate can be N type substrate.
Wherein, the step of formation the one I type semiconductor layer and p type semiconductor layer is identical among the step that forms I type semiconductor layer and p type semiconductor layer and the embodiment one, also repeats no more at this.
After forming p type semiconductor layer, can also on said p type semiconductor layer, form anti-reflecting layer and front electrode successively, in the lower surface formation backplate of substrate, but concrete reference implementation example one.
With reference to shown in Figure 12, adopt the present embodiment method to make the thin-film solar cells that obtains and comprise:
Be positioned at I type semiconductor layer 21, p type semiconductor layer 22, anti-reflecting layer 23 and the front electrode 24 of said N type substrate 20 upper surfaces successively;
Be positioned at the backplate 25 of said N type substrate 20 lower surfaces.
Wherein, the thickness range of said p type semiconductor layer 22 can comprise:
Wherein, the span of dopant ion concentration can comprise in the said p type semiconductor layer 22: 1E10/cm
3～1E20/cm
3
Lower in the present embodiment near dopant ion concentration in the p type semiconductor layer 22 of I type semiconductor layer 21, thus the pollution of 22 pairs of I type semiconductor layer 21 of p type semiconductor layer can be reduced; Higher away from dopant ion concentration in the p type semiconductor layer 22 of I type semiconductor layer 21, thus band gap width can be increased, finally can improve photoelectric conversion efficiency.
Embodiment three
Present embodiment provides a kind of manufacture method of thin-film solar cells, and the difference of itself and embodiment two is that present embodiment also forms n type semiconductor layer after forming p type semiconductor layer on p type semiconductor layer.
Wherein, the dopant ion concentration in the said n type semiconductor layer can evenly distribute, also can uneven distribution, and it does not limit protection scope of the present invention.
Particularly, with reference to shown in Figure 13, the film solar film battery that adopts the present embodiment method to make comprises:
Be positioned at I type semiconductor layer 31, p type semiconductor layer 32, n type semiconductor layer 33, anti-reflecting layer 34 and the front electrode 35 of said substrate 30 upper surfaces successively;
Be positioned at the backplate 36 of said substrate 20 lower surfaces.
Wherein, said substrate 30 can be N type substrate, also can be P type substrate.
Wherein, the thickness range of said p type semiconductor layer 32 can comprise:
Wherein, the span of dopant ion concentration can comprise in the said p type semiconductor layer 32: 1E10/cm
3～1E20/cm
3
Wherein, the thickness range of said n type semiconductor layer 33 can comprise:
Wherein, the span of dopant ion concentration can comprise in the said n type semiconductor layer 33: 1E10/cm
3～1E20/cm
3
Lower in the present embodiment near dopant ion concentration in the p type semiconductor layer 32 of I type semiconductor layer 31, thus the pollution of 32 pairs of I type semiconductor layer 31 of p type semiconductor layer can be reduced; Higher away from dopant ion concentration in the p type semiconductor layer 32 of I type semiconductor layer 31, thus band gap width can be increased, finally can improve photoelectric conversion efficiency.
Embodiment four
Present embodiment provides a kind of manufacture method of thin-film solar cells, comprising:
Substrate is provided;
On said substrate, form I type semiconductor layer and n type semiconductor layer successively, dopant ion concentration is from increase to the direction away from said I type semiconductor layer near said I type semiconductor layer successively in the said n type semiconductor layer.
Wherein, said substrate can be P type substrate.
Wherein, the step of formation the 2nd I type semiconductor layer and n type semiconductor layer is identical among the step that forms I type semiconductor layer and n type semiconductor layer and the embodiment one, also repeats no more at this.
After forming n type semiconductor layer, can also on said n type semiconductor layer, form anti-reflecting layer and front electrode successively, in the lower surface formation backplate of substrate, but concrete reference implementation example one.
With reference to shown in Figure 14, adopt the present embodiment method to make the thin-film solar cells that obtains and comprise:
P type substrate 40;
Be positioned at I type semiconductor layer 41, n type semiconductor layer 42, anti-reflecting layer 43 and the front electrode 44 of said P type substrate 40 upper surfaces successively;
Be positioned at the backplate 45 of said P type substrate 40 lower surfaces.
Wherein, the thickness range of said n type semiconductor layer 42 can comprise:
Wherein, the span of dopant ion concentration can comprise in the said n type semiconductor layer 42: 1E10/cm
3～1E20/cm
3
Lower in the present embodiment near dopant ion concentration in the n type semiconductor layer 42 of I type semiconductor layer 41, thus the pollution of 42 pairs of I type semiconductor layer 41 of n type semiconductor layer can be reduced; Higher away from dopant ion concentration in the n type semiconductor layer 42 of I type semiconductor layer 41, thus band gap width can be increased, finally can improve photoelectric conversion efficiency.
Embodiment five
Present embodiment provides a kind of manufacture method of thin-film solar cells, and the difference of itself and embodiment four is that present embodiment also forms p type semiconductor layer after forming n type semiconductor layer on n type semiconductor layer.
Wherein, the dopant ion concentration in the said p type semiconductor layer can evenly distribute, also can uneven distribution, and it does not limit protection scope of the present invention.
Particularly, with reference to shown in Figure 15, the film solar film battery that adopts the present embodiment method to make comprises:
Be positioned at I type semiconductor layer 51, n type semiconductor layer 52, p type semiconductor layer 53, anti-reflecting layer 54 and the front electrode 55 of said substrate 50 upper surfaces successively;
Be positioned at the backplate 56 of said substrate 50 lower surfaces.
Wherein, said substrate 50 can be N type substrate, also can be P type substrate.
Wherein, the thickness range of said n type semiconductor layer 52 can comprise:
Wherein, the span of dopant ion concentration can comprise in the said n type semiconductor layer 52: 1E10/cm
3～1E20/cm
3
Wherein, the thickness range of said p type semiconductor layer 53 can comprise:
Wherein, the span of dopant ion concentration can comprise in the said p type semiconductor layer 53: 1E10/cm
3～1E20/cm
3
Lower in the present embodiment near dopant ion concentration in the n type semiconductor layer 52 of I type semiconductor layer 51, thus the pollution of 52 pairs of I type semiconductor layer 51 of n type semiconductor layer can be reduced; Higher away from dopant ion concentration in the n type semiconductor layer 52 of I type semiconductor layer 51, thus band gap width can be increased, finally can improve photoelectric conversion efficiency.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can utilize the method and the technology contents of above-mentioned announcement that technical scheme of the present invention is made possible change and modification, therefore, every content that does not break away from technical scheme of the present invention; To any simple modification, equivalent variations and modification that above embodiment did, all belong to the protection range of technical scheme of the present invention according to technical spirit of the present invention.
Claims (23)
1. a thin-film solar cells is characterized in that, comprising:
Substrate;
Be positioned at an I type semiconductor layer, p type semiconductor layer and first electrode of said substrate one side successively;
Be positioned at the 2nd I type semiconductor layer, n type semiconductor layer and second electrode of said substrate opposite side successively;
Dopant ion concentration is from increase to the direction away from a said I type semiconductor layer near a said I type semiconductor layer successively in the said p type semiconductor layer; Dopant ion concentration is from increase to the direction away from said the 2nd I type semiconductor layer near said the 2nd I type semiconductor layer successively in the said n type semiconductor layer.
2. thin-film solar cells as claimed in claim 1 is characterized in that, said substrate is a N type substrate, and said first electrode is a front electrode, and said second electrode is a backplate; Perhaps, said substrate is a P type substrate, and said first electrode is a backplate, and said second electrode is a front electrode.
3. thin-film solar cells as claimed in claim 1; It is characterized in that the thickness range of said p type semiconductor layer or n type semiconductor layer comprises:
4. thin-film solar cells as claimed in claim 1 is characterized in that the span of dopant ion concentration comprises in said p type semiconductor layer or the n type semiconductor layer: 1E10/cm
3～1E20/cm
3
5. thin-film solar cells as claimed in claim 1 is characterized in that, also comprises:
First tunneling oxide layer between a said substrate and a said I type semiconductor layer;
Second tunneling oxide layer between said substrate and said the 2nd I type semiconductor layer.
6. thin-film solar cells as claimed in claim 5 is characterized in that, the material of said first tunneling oxide layer or said second tunneling oxide layer is a silica.
7. thin-film solar cells as claimed in claim 1 is characterized in that, also comprises:
First anti-reflecting layer between said p type semiconductor layer and said first electrode;
Second anti-reflecting layer between said n type semiconductor layer and said second electrode.
8. thin-film solar cells as claimed in claim 7 is characterized in that, the material of said first anti-reflecting layer or said second anti-reflecting layer is one or more in silicon nitride, zinc sulphide or the titanium dioxide.
9. the manufacture method of a thin-film solar cells is characterized in that, comprising:
Substrate is provided;
Side at said substrate forms an I type semiconductor layer, p type semiconductor layer and first electrode successively; Dopant ion concentration is from increase to the direction away from a said I type semiconductor layer near a said I type semiconductor layer successively in the said p type semiconductor layer;
Opposite side at said substrate forms the 2nd I type semiconductor layer, n type semiconductor layer and second electrode successively; Dopant ion concentration is from increase to the direction away from said the 2nd I type semiconductor layer near said the 2nd I type semiconductor layer successively in the said n type semiconductor layer.
10. the manufacture method of thin-film solar cells as claimed in claim 9 is characterized in that, adopts chemical gaseous phase depositing process to form said p type semiconductor layer and said n type semiconductor layer.
11. the manufacture method of thin-film solar cells as claimed in claim 10 is characterized in that, forms said p type semiconductor layer and comprises: select for use silane and borane as reacting gas, keep the flow unchanged of silane and increase the flow of borane successively; Perhaps, keep the flow unchanged of borane and reduce the flow of silane successively; Perhaps, increase the flow of borane and reduce the flow of silane successively successively.
12. the manufacture method of thin-film solar cells as claimed in claim 10 is characterized in that, forms said n type semiconductor layer and comprises: select for use silane and hydrogen phosphide as reacting gas, keep the flow unchanged of silane and increase the flow of hydrogen phosphide successively; Perhaps, keep the flow unchanged of hydrogen phosphide and reduce the flow of silane successively; Perhaps, increase the flow of hydrogen phosphide and reduce the flow of silane successively successively.
13. the manufacture method of thin-film solar cells as claimed in claim 9 is characterized in that, the span of dopant ion concentration comprises in the said p type semiconductor layer: 1E10/cm
3～1E20/cm
3The span of dopant ion concentration comprises in the said n type semiconductor layer: 1E10/cm
3～1E20/cm
3
14. a thin-film solar cells is characterized in that, comprising:
Substrate;
Be positioned at I type semiconductor layer and p type semiconductor layer on the said substrate successively; Perhaps, be positioned at I type semiconductor layer, p type semiconductor layer and n type semiconductor layer on the said substrate successively;
Dopant ion concentration is from increase to the direction away from said I type semiconductor layer near said I type semiconductor layer successively in the said p type semiconductor layer.
15. thin-film solar cells as claimed in claim 14; It is characterized in that the thickness range of said p type semiconductor layer comprises:
16. thin-film solar cells as claimed in claim 14 is characterized in that, the span of dopant ion concentration comprises in the said p type semiconductor layer: 1E10/cm
3～1E20/cm
3
17. the manufacture method of a thin-film solar cells is characterized in that, comprising:
Substrate is provided;
On said substrate, form I type semiconductor layer and p type semiconductor layer successively; Perhaps, on said substrate, form I type semiconductor layer, p type semiconductor layer and n type semiconductor layer successively;
Dopant ion concentration is from increase to the direction away from said I type semiconductor layer near said I type semiconductor layer successively in the said p type semiconductor layer.
18. the manufacture method of thin-film solar cells as claimed in claim 17 is characterized in that, forms said p type semiconductor layer and comprises: select for use silane and borane as reacting gas, keep the flow unchanged of silane and increase the flow of borane successively; Perhaps, keep the flow unchanged of borane and reduce the flow of silane successively; Perhaps, increase the flow of borane and reduce the flow of silane successively successively.
19. a thin-film solar cells is characterized in that, comprising:
Substrate;
Be positioned at I type semiconductor layer and n type semiconductor layer on the said substrate successively; Perhaps, be positioned at I type semiconductor layer, n type semiconductor layer and p type semiconductor layer on the said substrate successively;
Dopant ion concentration is from increase to the direction away from said I type semiconductor layer near said I type semiconductor layer successively in the said n type semiconductor layer.
20. thin-film solar cells as claimed in claim 19; It is characterized in that the thickness range of said n type semiconductor layer comprises:
21. thin-film solar cells as claimed in claim 19 is characterized in that, the span of dopant ion concentration comprises in the said n type semiconductor layer: 1E10/cm
3～1E20/cm
3
22. the manufacture method of a thin-film solar cells is characterized in that, comprising:
Substrate is provided;
On said substrate, form I type semiconductor layer and n type semiconductor layer successively; Perhaps, on said substrate, form I type semiconductor layer, n type semiconductor layer or p type semiconductor layer successively;
Dopant ion concentration is from increase to the direction away from said I type semiconductor layer near said I type semiconductor layer successively in the said n type semiconductor layer.
23. the manufacture method of thin-film solar cells as claimed in claim 22 is characterized in that, forms said n type semiconductor layer and comprises: select for use silane and hydrogen phosphide as reacting gas, keep the flow unchanged of silane and increase the flow of hydrogen phosphide successively; Perhaps, keep the flow unchanged of hydrogen phosphide and reduce the flow of silane successively; Perhaps, increase the flow of hydrogen phosphide and reduce the flow of silane successively successively.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105762234A (en) * | 2016-04-27 | 2016-07-13 | 中国科学院宁波材料技术与工程研究所 | Tunnel oxide passivated contact type solar cell and preparation method thereof |
| CN105895738A (en) * | 2016-04-26 | 2016-08-24 | 泰州中来光电科技有限公司 | Passivated contact N-type solar cell, preparation method, assembly and system |
| CN116387409A (en) * | 2023-06-06 | 2023-07-04 | 正泰新能科技有限公司 | N-type TBC solar cell and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101097969A (en) * | 2006-06-30 | 2008-01-02 | 通用电气公司 | Photovoltaic device which includes all-back-contact configuration, and related fabrication processes |
| CN101233620A (en) * | 2005-07-28 | 2008-07-30 | 通用电气公司 | Compositionally-graded photovoltaic device and fabrication method, and related articles |
| CN101438420A (en) * | 2006-05-04 | 2009-05-20 | 太阳能公司 | Solar cell having doped semiconductor heterojunction contacts |
| CN102148280A (en) * | 2010-02-10 | 2011-08-10 | 上海空间电源研究所 | Novel silicon substrate heterojunction solar cell |
| CN102208493A (en) * | 2011-05-20 | 2011-10-05 | 上海采日光伏技术有限公司 | Manufacturing method of full back electrode solar cell |
-
2011
- 2011-12-14 CN CN2011104179661A patent/CN102446992A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101233620A (en) * | 2005-07-28 | 2008-07-30 | 通用电气公司 | Compositionally-graded photovoltaic device and fabrication method, and related articles |
| CN101438420A (en) * | 2006-05-04 | 2009-05-20 | 太阳能公司 | Solar cell having doped semiconductor heterojunction contacts |
| CN101097969A (en) * | 2006-06-30 | 2008-01-02 | 通用电气公司 | Photovoltaic device which includes all-back-contact configuration, and related fabrication processes |
| CN102148280A (en) * | 2010-02-10 | 2011-08-10 | 上海空间电源研究所 | Novel silicon substrate heterojunction solar cell |
| CN102208493A (en) * | 2011-05-20 | 2011-10-05 | 上海采日光伏技术有限公司 | Manufacturing method of full back electrode solar cell |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105895738A (en) * | 2016-04-26 | 2016-08-24 | 泰州中来光电科技有限公司 | Passivated contact N-type solar cell, preparation method, assembly and system |
| CN105762234A (en) * | 2016-04-27 | 2016-07-13 | 中国科学院宁波材料技术与工程研究所 | Tunnel oxide passivated contact type solar cell and preparation method thereof |
| CN116387409A (en) * | 2023-06-06 | 2023-07-04 | 正泰新能科技有限公司 | N-type TBC solar cell and preparation method thereof |
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