CN102446900B - 多层金属互连金属线的电迁移可靠性测试结构 - Google Patents
多层金属互连金属线的电迁移可靠性测试结构 Download PDFInfo
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107887291A (zh) * | 2017-12-27 | 2018-04-06 | 中国电子产品可靠性与环境试验研究所 | 连接通孔的电迁移寿命时间测试装置及其测试方法 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103579192A (zh) * | 2012-07-26 | 2014-02-12 | 中芯国际集成电路制造(上海)有限公司 | 一种新型的通孔链测试结构及其测试方法 |
CN103681620B (zh) * | 2012-09-06 | 2016-08-03 | 中芯国际集成电路制造(上海)有限公司 | 互连电迁移的测试结构 |
CN103809062B (zh) * | 2012-11-07 | 2016-07-06 | 中芯国际集成电路制造(上海)有限公司 | 电迁移测试结构 |
CN103094255B (zh) * | 2013-02-27 | 2015-09-02 | 上海华力微电子有限公司 | 互连电迁移的测试结构 |
CN104835802A (zh) * | 2014-02-07 | 2015-08-12 | 中芯国际集成电路制造(上海)有限公司 | 电迁移结构和电迁移测试方法 |
CN105895619B (zh) * | 2015-01-23 | 2021-06-25 | 恩智浦美国有限公司 | 用于监测集成电路上金属退化的电路 |
CN106249001B (zh) * | 2016-05-05 | 2019-06-14 | 苏州能讯高能半导体有限公司 | 一种测试板 |
CN106449462B (zh) * | 2016-11-17 | 2019-11-26 | 上海华力微电子有限公司 | 电迁移测试结构 |
CN108447797A (zh) * | 2018-03-20 | 2018-08-24 | 长江存储科技有限责任公司 | 金属电迁移测试结构及使用该结构的金属电迁移测试方法 |
CN108573890B (zh) * | 2018-04-10 | 2021-07-27 | 上海华力微电子有限公司 | 一种铜金属互连电迁移测试结构及其测试方法 |
CN110071053A (zh) * | 2019-04-29 | 2019-07-30 | 上海华力微电子有限公司 | 一种电迁移测试结构 |
CN111722089B (zh) * | 2020-07-01 | 2022-03-22 | 无锡中微亿芯有限公司 | 基于层次化测试向量的高效测试方法 |
CN112117260A (zh) * | 2020-09-25 | 2020-12-22 | 上海华力微电子有限公司 | 金属电迁移测试电路结构 |
CN114264926B (zh) * | 2021-11-26 | 2024-06-21 | 中国电子科技集团公司第五十八研究所 | 单侧引出电压测试焊盘的单通孔跨层型电迁移测试结构 |
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US6762597B1 (en) * | 2002-10-30 | 2004-07-13 | Advanced Micro Devices, Inc. | Structure, system, and method for assessing electromigration permeability of layer material within interconnect |
CN1747144A (zh) * | 2004-09-08 | 2006-03-15 | 上海宏力半导体制造有限公司 | 内连线金属层结构的测试方法 |
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US6784000B2 (en) * | 1999-08-26 | 2004-08-31 | Qualitau, Inc. | Method for measurement of electromigration in semiconductor integrated circuits |
US7759957B2 (en) * | 2007-07-27 | 2010-07-20 | United Microelectronics Corp. | Method for fabricating a test structure |
US7671362B2 (en) * | 2007-12-10 | 2010-03-02 | International Business Machines Corporation | Test structure for determining optimal seed and liner layer thicknesses for dual damascene processing |
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Patent Citations (2)
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US6762597B1 (en) * | 2002-10-30 | 2004-07-13 | Advanced Micro Devices, Inc. | Structure, system, and method for assessing electromigration permeability of layer material within interconnect |
CN1747144A (zh) * | 2004-09-08 | 2006-03-15 | 上海宏力半导体制造有限公司 | 内连线金属层结构的测试方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107887291A (zh) * | 2017-12-27 | 2018-04-06 | 中国电子产品可靠性与环境试验研究所 | 连接通孔的电迁移寿命时间测试装置及其测试方法 |
CN107887291B (zh) * | 2017-12-27 | 2020-07-10 | 中国电子产品可靠性与环境试验研究所 | 连接通孔的电迁移寿命时间测试装置及其测试方法 |
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