CN102446900B - Electromigration reliability test structure for multilayer of metal interconnected metal wires - Google Patents
Electromigration reliability test structure for multilayer of metal interconnected metal wires Download PDFInfo
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- CN102446900B CN102446900B CN201010504055.8A CN201010504055A CN102446900B CN 102446900 B CN102446900 B CN 102446900B CN 201010504055 A CN201010504055 A CN 201010504055A CN 102446900 B CN102446900 B CN 102446900B
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Abstract
The invention discloses an electromigration reliability test structure of multilayer of metal interconnected metal wires, comprising the multilayer of metal wires, the lengths of the metal wires are no less than 200 microns, other parameters of the metal wires meet the design requirements of a chip to be tested, and every two layers of metal wires are connected by a through hole so as to form a structure in shape of Chinese character GONG (arch), wherein one end of a first layer of metal wire far away from the through hole and one end of a top layer of metal wire far away from the through hole are respectively provided with a current input end; and both ends of each metal wire are respectively provided with a voltage measuring end. With the adoption of the electromigration reliability test structure disclosed by the invention, electromigration service life data of each layer of metal wire are obtained with the testing of a structure, thereby the test time can be greatly shortened, a process development period is shortened, test samples are reduced, and the test cost is reduced.
Description
Technical field
The present invention relates to a kind of electromigration reliability test structure of multiple layer metal interconnect metallization lines.The invention still further relates to a kind of preparation method of test structure.
Background technology
Electromigration is that the phenomenon of mass transfer occurs metal under high current density effect, makes negative electrode one end in metal wire occur cavity (causing resistance to become greatly even opens circuit); Anode one end forms hillock or whisker (contacting and short circuit with adjacent wires).So electromigration is a key factor that affects device reliability, electro-migration testing also becomes one of big event of reliability of technology evaluation.Traditional electrical migration test method is exactly at high temperature test structure to be added to a direct current, observes resistance variations simultaneously, until resistance is noted down the lower out-of-service time after changing a lot.Then use statistical method and electromigration lifetime model projected life.
Existing electro-migration testing structure is the test structure (seeing Fig. 1) of single metal level.Under high temperature (150～250 degrees Celsius) environment, packaged test structure current input terminal is added to a constant current, by measuring voltage, survey the variation that terminal voltage is carried out monitored resistance simultaneously.Normally because electromigration in metal wire produces cavity, cause resistance value to become large, use ESEM can observe the empty microscopic appearance that electromigration metal level forms.Along with the metal interconnected number of plies is more and more, the structure of electro-migration testing is just more and more, and every one deck time that all projected life test needs can be very long, and conventional test methodologies needs the encapsulation of a large amount of samples simultaneously, also needs more tester table and cost.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of electromigration reliability test structure of multiple layer metal interconnect metallization lines, and its electromigration reliability that can realize multiple layer metal line by a structure is tested.
For solving the problems of the technologies described above, the electromigration reliability test structure of multiple layer metal interconnect metallization lines of the present invention, this test structure comprises multiple layer metal line, the length of metal wire is for being more than or equal to 200 microns, other parameter of metal wire is identical with the chip design that will test, between every double layer of metal line, adopt through hole to connect, form class " bow " word structure; Wherein in first layer metal line away from being respectively and being provided with current input terminal away from one end of through hole in one end of through hole and top wire; Each metal wire two ends are respectively arranged with voltage side.
The present invention also provides a kind of preparation method of above-mentioned test structure, for:
Step 1, the white space by described structure design of test at chip, is incorporated into chip and prepares in Hou road metallization process, completes the preparation of whole chip;
In the present invention, by testing a structure, obtain each layer of metal wire electromigration lifetime data, compare and can greatly reduce the testing time with traditional single metal level electro-migration testing structure, shorten the process exploitation cycle; Reduce specimen and reduce testing cost.Especially in the new process development stage, can Fast Evaluation metal level electromigration reliability risk.
Accompanying drawing explanation
Below in conjunction with accompanying drawing and embodiment, the present invention is further detailed explanation:
Fig. 1 is existing test structure schematic diagram;
Fig. 2 is a concrete test structure schematic diagram of the present invention;
Fig. 3 is the vertical view of Fig. 2;
Fig. 4 is that test structure of the present invention is made and testing process schematic diagram.
Embodiment
The electromigration reliability test structure of multiple layer metal interconnect metallization lines of the present invention, comprise multiple layer metal line, the length of metal wire is for being more than or equal to 200 microns, other parameter of metal wire is identical with the chip design that will test, between every double layer of metal line, adopt through hole to connect, form class " bow " word structure; Wherein in first layer metal line away from being respectively and being provided with current input terminal away from one end of through hole in one end of through hole and top wire; Each metal wire two ends are respectively arranged with voltage measuring end.The length of every layer of metal wire is identical.
Fig. 2 is the present invention's one specific embodiment, and wherein metal wire is 5 layers, and the length d of metal wire is selected 400 microns, width b, and the big or small a of through hole is the designing requirement setting (seeing Fig. 3) of related process chip.As the F1 of current input terminal and the width c of F2, be 5 times of metal live width b, follow the guidance standard of test electromobility.The voltage measuring end at metal wire two ends is metal wire s (width can be related process minimum design dimension), adopts in the metal deposit of this layer and etching technics and is prepared from.
The preparation of above-mentioned test structure is incorporated in the product preparation of needs assessment, concrete preparation method be (seeing Fig. 4): above-mentioned test structure is signed in by related design rule in the domain of product of needs assessment electromigration reliability, then with technological process, produced the wafer of test needs; To after wafer reduction scribing, obtain test structure again, packaged sample (connecting at current input terminal and every layer of voltage measuring end routing).
Ensuing electro-migration testing: will first measure the resistance of the every one deck metal wire of this test structure before electromigration input test electric current, and then start electro-migration testing; In high temperature high-current test process, measure the voltage at every layer of metal wire two ends, thereby record the resistance variations of every layer of metal, record the out-of-service time of each layer of metal, then by each layer of out-of-service time data, by standard, extrapolate each layer of electromigration lifetime.This electro-migration testing process is conventional test process.
Adopt test structure of the present invention, can obtain by the test of a structure each layer of electromigratory data of metal wire, greatly reduce testing time and cost.Especially in the new process development stage, can Fast Evaluation metal level electromigration reliability risk, shorten the construction cycle.The 5 metal interconnected techniques in Ceng Hou road of take are example, can save for 80% sample and time.
Claims (3)
1. the electromigration reliability test structure of a multiple layer metal interconnect metallization lines, it is characterized in that: described test structure comprises multiple layer metal line, the length of described metal wire is for being more than or equal to 200 microns, other parameter of metal wire requires identical with the chip design that will test, between every double layer of metal line, adopt through hole to connect, form class " bow " word structure; Wherein in first layer metal line away from being respectively and being provided with current input terminal away from one end of through hole in one end of through hole and top wire; Described each layer of metal wire two ends are respectively arranged with voltage measuring end.
2. according to test structure claimed in claim 1, it is characterized in that: the live width of described current input terminal is 5 times of described metal wire live width.
3. according to the test structure described in claim 1 or 2, it is characterized in that: the length of described metal wire is 400 microns.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201010504055.8A CN102446900B (en) | 2010-10-12 | 2010-10-12 | Electromigration reliability test structure for multilayer of metal interconnected metal wires |
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| CN201010504055.8A CN102446900B (en) | 2010-10-12 | 2010-10-12 | Electromigration reliability test structure for multilayer of metal interconnected metal wires |
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| CN102446900A CN102446900A (en) | 2012-05-09 |
| CN102446900B true CN102446900B (en) | 2014-02-26 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107887291A (en) * | 2017-12-27 | 2018-04-06 | 中国电子产品可靠性与环境试验研究所 | Connect the electromigration lifetime time tester and its method of testing of through hole |
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| CN103579192A (en) * | 2012-07-26 | 2014-02-12 | 中芯国际集成电路制造(上海)有限公司 | Novel through hole chain testing structure and testing method thereof |
| CN103681620B (en) * | 2012-09-06 | 2016-08-03 | 中芯国际集成电路制造(上海)有限公司 | Interconnect electromigratory test structure |
| CN103809062B (en) * | 2012-11-07 | 2016-07-06 | 中芯国际集成电路制造(上海)有限公司 | Electro-migration testing structure |
| CN103094255B (en) * | 2013-02-27 | 2015-09-02 | 上海华力微电子有限公司 | Interconnect electromigratory test structure |
| CN104835802A (en) * | 2014-02-07 | 2015-08-12 | 中芯国际集成电路制造(上海)有限公司 | Electro-Migration structure and EM test method |
| CN105895619B (en) * | 2015-01-23 | 2021-06-25 | 恩智浦美国有限公司 | Circuit for monitoring metal degradation on integrated circuit |
| CN106249001B (en) * | 2016-05-05 | 2019-06-14 | 苏州能讯高能半导体有限公司 | A kind of test board |
| CN106449462B (en) * | 2016-11-17 | 2019-11-26 | 上海华力微电子有限公司 | Electro-migration testing structure |
| CN108447797A (en) * | 2018-03-20 | 2018-08-24 | 长江存储科技有限责任公司 | Metal electro-migration test structure and the metal electro-migration test method for using the structure |
| CN108573890B (en) * | 2018-04-10 | 2021-07-27 | 上海华力微电子有限公司 | Copper metal interconnection electromigration test structure and test method thereof |
| CN110071053A (en) * | 2019-04-29 | 2019-07-30 | 上海华力微电子有限公司 | A kind of electro-migration testing structure |
| CN111722089B (en) * | 2020-07-01 | 2022-03-22 | 无锡中微亿芯有限公司 | High-efficiency testing method based on hierarchical testing vector |
| CN112117260A (en) * | 2020-09-25 | 2020-12-22 | 上海华力微电子有限公司 | Metal electromigration test circuit structure |
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| CN1747144A (en) * | 2004-09-08 | 2006-03-15 | 上海宏力半导体制造有限公司 | Test of metal layer structure with internal ligature |
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| US6784000B2 (en) * | 1999-08-26 | 2004-08-31 | Qualitau, Inc. | Method for measurement of electromigration in semiconductor integrated circuits |
| US7759957B2 (en) * | 2007-07-27 | 2010-07-20 | United Microelectronics Corp. | Method for fabricating a test structure |
| US7671362B2 (en) * | 2007-12-10 | 2010-03-02 | International Business Machines Corporation | Test structure for determining optimal seed and liner layer thicknesses for dual damascene processing |
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| US6762597B1 (en) * | 2002-10-30 | 2004-07-13 | Advanced Micro Devices, Inc. | Structure, system, and method for assessing electromigration permeability of layer material within interconnect |
| CN1747144A (en) * | 2004-09-08 | 2006-03-15 | 上海宏力半导体制造有限公司 | Test of metal layer structure with internal ligature |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107887291A (en) * | 2017-12-27 | 2018-04-06 | 中国电子产品可靠性与环境试验研究所 | Connect the electromigration lifetime time tester and its method of testing of through hole |
| CN107887291B (en) * | 2017-12-27 | 2020-07-10 | 中国电子产品可靠性与环境试验研究所 | Electromigration service life testing device and testing method of connecting through hole |
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| CN102446900A (en) | 2012-05-09 |
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