CN102446680A - Novel emission electron cathode for effectively increasing multi-charge ion yield - Google Patents
Novel emission electron cathode for effectively increasing multi-charge ion yield Download PDFInfo
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- CN102446680A CN102446680A CN2010105140984A CN201010514098A CN102446680A CN 102446680 A CN102446680 A CN 102446680A CN 2010105140984 A CN2010105140984 A CN 2010105140984A CN 201010514098 A CN201010514098 A CN 201010514098A CN 102446680 A CN102446680 A CN 102446680A
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Abstract
The invention discloses a novel emission electron cathode for effectively increasing multi-charge ion yield, relating to an ion implantation machine and belonging to the field of manufacture of semiconductors. The novel emission electron cathode comprises a concave emitting surface, a cylindrical shielding cylinder and a center fixing rod at a center of a circle, wherein the concave emitting surface is made of a high-purity tungsten material and is of a circular sheet-shaped block structure, an ion source emits electrons through the concave emitting surface; the cylindrical shielding cylinder is made of a high-purity tungsten material and is of a cylinder structure and is connected with the concave emitting surface together and plays a role of shielding a built-in lamp filament; and the center fixing rod passes through the center of the cylindrical shielding cylinder and supports and fixes the concave emitting surface and the cylindrical shielding cylinder. The emission electron cathode provided by the invention adopts a concave arc surface to replace a common plane structure so that electrons emitted by the cathode are relatively more concentrated in a discharge arc chamber center region, thus the multi-charge ion yield of the ion source is effectively improved while gas molecule ionization efficiency is increased; meanwhile, the novel emission electron cathode has the characteristics of simple connection, stability and reliability, small thermal deformation and long service life, and ensures stability and reliability of long-term working of the ion source.
Description
Technical field
The present invention relates to ion source, this ion source is applicable to ion implantor, and particularly a kind of ion source that has the long-life, improves multiple-charged ion yield negative electrode belongs to field of manufacturing semiconductor devices.
Background technology
In the existing semiconductor integrated circuit manufacturing technology, require ion implantor to have wide energy and inject function and characteristics such as range of application, production efficiency is high, whole aircraft reliability is good, and these performances of ion implantor and multimode ionization source charge ion yield are closely related.
Because superior useful life and the practicality characteristic of cathodes heated indirectly by an el ion source; The advanced ion implantor product that present each heavy ion implanter manufacturer is in the world produced all generally adopts cathodes heated indirectly by an el long-life ion source; The main characteristic of cathodes heated indirectly by an el ion source is to adopt advanced cathodes heated indirectly by an el to replace traditional filament emitting electrons; Solved hot-cathode ion source such as Man Yuan, Bei Nasi source need frequent change filament problem in the general fluorine, ion source can improve useful life greatly; Simultaneously; Modern industry production requirement ion implantor has wide energy and injects range of application practicality characteristic; Can satisfy general in the line implanter 200-300KeV normal energy range applications; Can also carry out the 400-900KeV high-energy and inject application; And the multiple-charged ion line is big and production efficiency is high when high energy injects, and practicality characteristic such as require therefore that employed multimode ionization source charge ion yield is high, the multiple-charged ion beam stability is good, bundle adjustment time response is fast is to improve the production efficiency of ion implantor.
In order to improve multimode ionization source charge ion yield height and beam stability thereof; The present invention adopts new structure emitting electrons negative electrode; Cathode electronics surface of emission structure adopts the matrix cambered surface to replace general planar structure; Make the electronics of cathode emission more concentrated relatively, thereby improve the gas molecule ionizing efficiency and effectively improve multimode ionization source charge ion yield at the arc chamber central zone.
Summary of the invention
The present invention be directed to modern industry and produce the higher requirement of multimode ionization source charge ion yield of ion implantor; Adopt novel emitting electrons negative electrode; Cathode electronics surface of emission structure adopts the matrix cambered surface to replace general planar structure; Make the electronics of cathode emission more concentrated relatively, thereby improve the gas molecule ionizing efficiency and effectively improve multimode ionization source charge ion yield at the arc chamber central zone.
The present invention realizes through following technical scheme:
A kind of novel emitting electrons negative electrode of effective raising multiple-charged ion yield is a cylindrical shield barrel structure, wherein is designed with a spill surface of emission, a cylindrical shield tube and circle centre position one center fixation bar.
The described spill surface of emission is the high purity tungsten material, the round sheet block structure, and ion source is through its emitting electrons.
Described cylindrical shield tube is the high purity tungsten material, and cylindrical structure links together with the spill surface of emission, and built-in filament is played the shielding protection effect.
Described circle centre position center fixation bar is tungsten and molybdenum material, the support fixation spill surface of emission and shielding cylinder.
The present invention has following remarkable advantage:
1. cathode electronics surface of emission structure adopts the matrix cambered surface to replace general planar structure, makes the electronics of cathode emission more concentrated relatively at the arc chamber central zone, thereby improves the gas molecule ionizing efficiency and effectively improve multimode ionization source charge ion yield.
2. negative electrode long service life.
3. the structure connection is simple, reliable and stable, and thermal deformation is little.
Description of drawings
Fig. 1 is the novel concave structure emitting electrons negative electrode of effective raising multiple-charged ion yield of the present invention;
Embodiment:
Below in conjunction with accompanying drawing and specific embodiment the present invention is done further introduction, but not as the qualification novel to the present invention.
With reference to figure 1, the novel emitting electrons negative electrode that effectively improves the multiple-charged ion yield is a cylindrical shield barrel structure, wherein is designed with a spill surface of emission 1, a cylindrical shield tube 2 and circle centre position one center fixation bar 3.Wherein: the spill surface of emission is the high purity tungsten material, the round sheet block structure, and ion source links together with cylindrical shield tube 2 through its emitting electrons, and through circle centre position one center fixation bar 3 support fixation; Cylindrical shield tube 2 is the high purity tungsten material, and cylindrical structure links together with the spill surface of emission 1, and built-in filament is played the shielding protection effect; Circle centre position center fixation bar 3, the support fixation spill surface of emission 1 and cylindrical shield cylinder 2.
The emitting electrons cathode construction of design adopts the matrix cambered surface to replace general planar structure like this; Make the electronics of cathode emission more concentrated relatively, thereby improve the gas molecule ionizing efficiency and effectively improve multimode ionization source charge ion yield at the arc chamber central zone; Connect simply, reliable and stable simultaneously, the little and long service life characteristics of thermal deformation guarantee the reliability of ion source long-term work.
Specific embodiment of the present invention elaborates content of the present invention.As far as persons skilled in the art, any conspicuous change of under the prerequisite that does not deviate from spirit of the present invention, it being done all constitutes the infringement to patent of the present invention, with corresponding legal responsibilities.
Claims (3)
1. effectively improve the novel emitting electrons negative electrode of multiple-charged ion yield, it is characterized in that: spill surface of emission, cylindrical shield tube and center fixation bar of circle centre position; The described spill surface of emission and cylindrical shield tube link together, and by the center fixation bar support fixation through cylindrical shield tube center.
2. the novel emitting electrons negative electrode of effective raising multiple-charged ion yield as claimed in claim 1; It is characterized in that: described cathode electronics surface of emission structure adopts the matrix cambered surface to replace general planar structure; Make the electronics of cathode emission more concentrated relatively, thereby improve the gas molecule ionizing efficiency and effectively improve multimode ionization source charge ion yield at the arc chamber central zone.
3. the novel emitting electrons negative electrode of effective raising multiple-charged ion yield as claimed in claim 1 is characterized in that: described electronic cathode adopts the spill globoidal structure, has increased electron emitting surface, has prolonged the useful life of negative electrode.
The novel emitting electrons negative electrode of 4 effective raising multiple-charged ion yields as claimed in claim 1 is characterized in that: described electronic cathode structure connects simple, reliable and stable, and thermal deformation is little.
Priority Applications (1)
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CN2010105140984A CN102446680A (en) | 2010-10-13 | 2010-10-13 | Novel emission electron cathode for effectively increasing multi-charge ion yield |
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CN2010105140984A CN102446680A (en) | 2010-10-13 | 2010-10-13 | Novel emission electron cathode for effectively increasing multi-charge ion yield |
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CN102446680A true CN102446680A (en) | 2012-05-09 |
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CN2010105140984A Pending CN102446680A (en) | 2010-10-13 | 2010-10-13 | Novel emission electron cathode for effectively increasing multi-charge ion yield |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3803441A (en) * | 1972-04-28 | 1974-04-09 | Tokyo Shibaura Electric Co | Indirectly heated type cathode devices using foil heater embedded in mixture of heat resistant dielectric and a metal |
CN1428001A (en) * | 2000-05-17 | 2003-07-02 | 瓦里安半导体设备联合公司 | Control system for indirectly heated cathode ion source |
CN1649077A (en) * | 2004-12-23 | 2005-08-03 | 北京中科信电子装备有限公司 | Long life ionic source of ion injection machine |
US20090014667A1 (en) * | 1999-12-13 | 2009-01-15 | Hahto Sami K | External cathode ion source |
-
2010
- 2010-10-13 CN CN2010105140984A patent/CN102446680A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3803441A (en) * | 1972-04-28 | 1974-04-09 | Tokyo Shibaura Electric Co | Indirectly heated type cathode devices using foil heater embedded in mixture of heat resistant dielectric and a metal |
US20090014667A1 (en) * | 1999-12-13 | 2009-01-15 | Hahto Sami K | External cathode ion source |
CN1428001A (en) * | 2000-05-17 | 2003-07-02 | 瓦里安半导体设备联合公司 | Control system for indirectly heated cathode ion source |
CN1649077A (en) * | 2004-12-23 | 2005-08-03 | 北京中科信电子装备有限公司 | Long life ionic source of ion injection machine |
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Application publication date: 20120509 |