CN102437002A - Gas distributing disc for gas suction structure - Google Patents
Gas distributing disc for gas suction structure Download PDFInfo
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- CN102437002A CN102437002A CN2011103883968A CN201110388396A CN102437002A CN 102437002 A CN102437002 A CN 102437002A CN 2011103883968 A CN2011103883968 A CN 2011103883968A CN 201110388396 A CN201110388396 A CN 201110388396A CN 102437002 A CN102437002 A CN 102437002A
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- even gas
- gas dish
- gas
- air intake
- intake structure
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Abstract
The invention relates to the technical field of plasma etching and depositing equipment, in particular to a gas distributing disc for a gas suction structure in the plasma etching and depositing equipment. A plurality of small holes are distributed on the gas distributing disc of the gas suction structure, and the small holes are distributed in a way that the density is gradually reduced, increased or firstly reduced and then is increased from the center to the edge of the gas distributing disc. Due to the adoption of the gas distributing disc, density of gas flow inside a reaction cavity is uniform and consistent, and the homogeneity of the gas on the surface of a chip can be improved, so the gas density on the surface of the chip reaches consistency.
Description
Technical field
The present invention relates to plasma etching, deposition apparatus technical field, be specifically related to the even gas dish in a kind of air intake structure that is applied to plasma etching, deposition apparatus.
Background technology
In plasma process such as etching and deposit, depressed structure is spared in air inlet, not only determines the pressure and the flow distribution of process gas, for the even distribution that loads the plasma that the radio frequency starter generates very big influence is arranged also, thereby, influence the quality of process chip.
In etching technics, air intake structure generally adopts air inlet pipe directly to feed chamber, because the difference of air inlet pipe and chamber size is bigger.Perhaps, some equally distributed apertures of processing on the air inlet tube wall.After the air inlet, the pressure and the flow gradients of gas are bigger.Like this, after radio frequency loaded, the plasma uniformity consistency that starter obtains was difficult to guarantee.During process chip, because of the even gas weak effect of air intake structure, chamber interior horizontal direction distribution of gas gradient is bigger, causes plasma inhomogeneous in the density distribution of chip surface, causes the uniformity of etching chip surface and etch rate inconsistent.
Summary of the invention
The object of the present invention is to provide a kind of even gas dish that is used for air intake structure, realize that in plasma process gas pressure and flow distribution are even, behind the starter, guarantee surface, obtain the plasma of uniformity consistency in process chip.
In order to achieve the above object, the technical scheme of the present invention's employing is:
A kind of even gas dish that is used for air intake structure, some apertures that distribute on the said even gas dish, said aperture from the center of said even gas dish to the edge according to by close to dredge, by dredging close or distributing to close mode again to dredging by close.
In the such scheme, the diameter of said even gas dish is 1～5000mm, and thickness is 1～100mm, and the aperture on the said even gas dish distributes in the diameter range of said even gas dish, and said hole diameter is 0.1～20mm.
In the such scheme, the material of said even gas dish is nonmetallic materials, and said nonmetallic materials are for gathering engineering plastics, graphite, pottery, quartz, boron carbide or carborundum such as tetrafluoro, Merlon, PE.
In the such scheme, the aperture on the said even gas dish be shaped as circle, triangle, square or rhombus.
In the such scheme, said even gas dish comprises sidewall and chassis, is provided with arrangement for adjusting height between said sidewall and the said chassis.
In the such scheme, the height adjustment range of said arrangement for adjusting height is 0.1～100mm.
In the such scheme; Said arrangement for adjusting height comprises fixed head and adjustment screw; Said fixed head is fixed on the said sidewall; Said fixed head is provided with screwed hole, and the screwed hole that said adjustment screw is passed on the said fixed head is fixedly connected said sidewall with said chassis, and the relative altitude between said chassis and the said sidewall is regulated through said adjustment screw.
Compare with the prior art scheme, the beneficial effect that the technical scheme that the present invention adopts produces is following:
The present invention helps current density uniformity in the reaction chamber, plays the uniformity effect that improves chip surface gas, the gas density that arrives chip surface is distributed reach unanimity.
Description of drawings
The structural representation of the even gas dish that Fig. 1 provides for the embodiment of the invention;
Fig. 2 is the structural representation of even gas dish sidewall in the embodiment of the invention;
Fig. 3 is the structural representation that even gas dish sidewall is connected with the chassis in the embodiment of the invention;
Fig. 4 is for to be applied in the structural representation in the air intake structure with the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing and embodiment technical scheme of the present invention is described in detail.
As shown in Figure 1; The embodiment of the invention provides a kind of even gas dish that is used for air intake structure; Some apertures 51 that distribute on the even gas dish 5, aperture 51 from the center of even gas dish 5 to the edge according to distributing to close mode again to dredging by close, the distribution mode of aperture 51 can make plasma through even gas dish 5 time; Improve the density at chip edge position, make that the particle that arrives chip is more even.The diameter of even gas dish 5 is 1～5000mm, and thickness is 1～100mm, and the aperture 51 on the even gas dish 5 distributes in the diameter range of even gas dish 5, and hole diameter is 0.1～20mm.Aperture 51 on the even gas dish 5 be shaped as circle, triangle, square, rhombus or other shapes.The material of even gas dish 5 is for gathering nonmetallic materials such as engineering plastics such as tetrafluoro, Merlon, PE, graphite, pottery, quartz, boron carbide or carborundum.
In the present embodiment, the distribution mode of the aperture 51 on the even gas dish 5 can also be from the center to the edge by close to dredging or by dredging to close distribution.
As shown in Figures 2 and 3; Even gas dish 5 comprises sidewall 52 and chassis 55; Even three fixed heads 53 that distribute on the sidewall 52, the screwed hole 54 that adjustment screw 56 is passed on the fixed head 53 is fixedly connected chassis 55 with sidewall 52, and the relative altitude between chassis 55 and the sidewall 52 is regulated through the length of adjustment screw 56; Adjusting through height can make the current density that arrives the chip top reach unanimity, and the adjustable range of height is 0.1～100mm.Belong to excessive cooperation between sidewall 52 and the chassis 55, guarantee to regulate sliding process and align up and down.
As shown in Figure 4, the even gas dish 5 that the embodiment of the invention provides is applied in the air intake structure, and air intake structure also comprises air inlet pipe 1 and even inflator 4, and air intake structure is arranged on the reaction chamber top of cavity top cover 2 and chamber 8 compositions, and cavity top cover 2 inboards are provided with radio frequency electrode 3.Air inlet pipe 1 is fixedly installed on cavity top cover 2 middle parts; With cavity top cover 2 flange seals; Air inlet pipe 1 end extends in the even inflator 4 in the reaction chamber; Even gas dish 5 is arranged on even inflator 4 belows, and the sidewall of even gas dish 5 is fixed on cavity top cover 2 inboards, can regulate the height of chassis in reaction chamber through arrangement for adjusting height.Exhaust outlet 9 is arranged on chamber 8 lower ends, and chip 6 is placed on the interior slide holder 7 of reaction chamber.In etching process, be the even gas dish that embodiment provides owing to adopted the present invention, make the gas flow that arrives chip 6 surfaces distribute and be tending towards evenly helping the uniformity of plasma with sealing, guarantee the uniformity of etching chip.
The present invention is when work, and process gas gets into the reaction chamber top by air inlet pipe 1, arrives even inflator 4, and gas shunting 9 gets into the space of even gas dish 5 tops then, arrives slide holder 6 tops again; Final reaction product and part process gas conflux 10 from exhaust outlet 8 outflows.Regulate the even setting height(from bottom) of gas dish 5 in reaction chamber through arrangement for adjusting height, the current density that arrives the chip top is reached unanimity.
The present invention helps current density uniformity in the reaction chamber, plays the uniformity effect that improves chip surface gas, the gas density that arrives chip surface is distributed reach unanimity.
The above is merely the preferred embodiments of the present invention, is not limited to the present invention, and for a person skilled in the art, the present invention can have various changes and variation.All within spirit of the present invention and principle, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. even gas dish that is used for air intake structure is characterized in that: some apertures that distribute on the said even gas dish, said aperture from the center of said even gas dish to the edge according to by close to dredge, by dredging close or distributing to close mode again to dredging by close.
2. the even gas dish that is used for air intake structure as claimed in claim 1; It is characterized in that: the diameter of said even gas dish is 1～5000mm; Thickness is 1～100mm, and the aperture on the said even gas dish distributes in the diameter range of said even gas dish, and said hole diameter is 0.1～20mm.
3. the even gas dish that is used for air intake structure as claimed in claim 1, it is characterized in that: the material of said even gas dish is nonmetallic materials, said nonmetallic materials are for gathering tetrafluoro, Merlon, engineering plastics, graphite, pottery, quartz, boron carbide or carborundum.
4. the even gas dish that is used for air intake structure as claimed in claim 1 is characterized in that: the aperture on the said even gas dish be shaped as circle, triangle, square or rhombus.
5. the even gas dish that is used for air intake structure as claimed in claim 1 is characterized in that: said even gas dish comprises sidewall and chassis, is provided with arrangement for adjusting height between said sidewall and the said chassis.
6. the even gas dish that is used for air intake structure as claimed in claim 5, it is characterized in that: the height adjustment range of said arrangement for adjusting height is 0.1～100mm.
7. the even gas dish that is used for air intake structure as claimed in claim 5; It is characterized in that: said arrangement for adjusting height comprises fixed head and adjustment screw; Said fixed head is fixed on the said sidewall; Said fixed head is provided with screwed hole, and the screwed hole that said adjustment screw is passed on the said fixed head is fixedly connected said sidewall with said chassis, and the relative altitude between said chassis and the said sidewall is regulated through said adjustment screw.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110388396.8A CN102437002B (en) | 2011-11-29 | 2011-11-29 | A kind of even gas dish for air intake structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110388396.8A CN102437002B (en) | 2011-11-29 | 2011-11-29 | A kind of even gas dish for air intake structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102437002A true CN102437002A (en) | 2012-05-02 |
| CN102437002B CN102437002B (en) | 2015-12-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110388396.8A Active CN102437002B (en) | 2011-11-29 | 2011-11-29 | A kind of even gas dish for air intake structure |
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| CN (1) | CN102437002B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104492353A (en) * | 2014-12-11 | 2015-04-08 | 中国核动力研究设计院 | Water seal annular porous uniform gas allocation system for inflammable gas |
| CN107785283A (en) * | 2016-08-24 | 2018-03-09 | 北京北方华创微电子装备有限公司 | Heating chamber and semiconductor processing equipment |
| CN105448770B (en) * | 2014-07-25 | 2018-05-08 | 北京北方华创微电子装备有限公司 | For the inlet duct of semiconductor equipment and using its reaction chamber |
| CN109341967A (en) * | 2018-12-13 | 2019-02-15 | 北方民族大学 | A kind of air-tightness detection device and its application method of air inlet mechanical structure |
| CN112192154A (en) * | 2020-09-30 | 2021-01-08 | 靖江先锋半导体科技有限公司 | Processing technology of gas spraying disc for etching machine |
| CN115029775A (en) * | 2021-03-05 | 2022-09-09 | 中国电子科技集团公司第四十八研究所 | Epitaxial growth equipment with gas flowing horizontally |
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| US20030136516A1 (en) * | 2002-01-22 | 2003-07-24 | Hong-Seub Kim | Gas diffussion plate for use in ICP etcher |
| US20040129211A1 (en) * | 2003-01-07 | 2004-07-08 | Applied Materials, Inc. | Tunable gas distribution plate assembly |
| CN1848368A (en) * | 2005-12-02 | 2006-10-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma etching device capable of raising etching uniformity |
| CN101207001A (en) * | 2006-12-22 | 2008-06-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Exhaust device and reaction chamber containing the same |
| CN201215800Y (en) * | 2008-04-15 | 2009-04-01 | 上海华虹Nec电子有限公司 | Upper electrode for semiconductor etching device |
| CN101405845A (en) * | 2006-03-28 | 2009-04-08 | 积水化学工业株式会社 | Surface processing apparatus |
| CN101488446A (en) * | 2008-01-14 | 2009-07-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing apparatus and gas dispensing apparatus thereof |
| CN101748377A (en) * | 2010-01-07 | 2010-06-23 | 中国科学院半导体研究所 | Reaction chamber of metal organism chemical deposition equipment |
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2011
- 2011-11-29 CN CN201110388396.8A patent/CN102437002B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030136516A1 (en) * | 2002-01-22 | 2003-07-24 | Hong-Seub Kim | Gas diffussion plate for use in ICP etcher |
| US20040129211A1 (en) * | 2003-01-07 | 2004-07-08 | Applied Materials, Inc. | Tunable gas distribution plate assembly |
| CN1848368A (en) * | 2005-12-02 | 2006-10-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma etching device capable of raising etching uniformity |
| CN101405845A (en) * | 2006-03-28 | 2009-04-08 | 积水化学工业株式会社 | Surface processing apparatus |
| CN101207001A (en) * | 2006-12-22 | 2008-06-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Exhaust device and reaction chamber containing the same |
| CN101488446A (en) * | 2008-01-14 | 2009-07-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing apparatus and gas dispensing apparatus thereof |
| CN201215800Y (en) * | 2008-04-15 | 2009-04-01 | 上海华虹Nec电子有限公司 | Upper electrode for semiconductor etching device |
| CN101748377A (en) * | 2010-01-07 | 2010-06-23 | 中国科学院半导体研究所 | Reaction chamber of metal organism chemical deposition equipment |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105448770B (en) * | 2014-07-25 | 2018-05-08 | 北京北方华创微电子装备有限公司 | For the inlet duct of semiconductor equipment and using its reaction chamber |
| CN104492353A (en) * | 2014-12-11 | 2015-04-08 | 中国核动力研究设计院 | Water seal annular porous uniform gas allocation system for inflammable gas |
| CN107785283A (en) * | 2016-08-24 | 2018-03-09 | 北京北方华创微电子装备有限公司 | Heating chamber and semiconductor processing equipment |
| CN107785283B (en) * | 2016-08-24 | 2020-07-17 | 北京北方华创微电子装备有限公司 | Heating chamber and semiconductor processing equipment |
| CN109341967A (en) * | 2018-12-13 | 2019-02-15 | 北方民族大学 | A kind of air-tightness detection device and its application method of air inlet mechanical structure |
| CN112192154A (en) * | 2020-09-30 | 2021-01-08 | 靖江先锋半导体科技有限公司 | Processing technology of gas spraying disc for etching machine |
| CN115029775A (en) * | 2021-03-05 | 2022-09-09 | 中国电子科技集团公司第四十八研究所 | Epitaxial growth equipment with gas flowing horizontally |
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| Publication number | Publication date |
|---|---|
| CN102437002B (en) | 2015-12-09 |
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