CN102427201A - Method for shortening laser emission delay time in processing of starting green light pulse laser and laser power supply - Google Patents
Method for shortening laser emission delay time in processing of starting green light pulse laser and laser power supply Download PDFInfo
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- CN102427201A CN102427201A CN2011103582617A CN201110358261A CN102427201A CN 102427201 A CN102427201 A CN 102427201A CN 2011103582617 A CN2011103582617 A CN 2011103582617A CN 201110358261 A CN201110358261 A CN 201110358261A CN 102427201 A CN102427201 A CN 102427201A
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Abstract
The invention discloses a method for shortening laser emission delay time in a process of starting green light pulse laser and a laser power supply. The method comprises the following steps of: enabling superposing a peak sub-pulse higher than high level of a square wave to a rising edge of a square wave pulse by a pulse output by the laser power supply; increasing pump light input for an Nd (neodymium) doped laser crystal; and shortening time of reaching a critical value of laser output during stimulated radiation produced by the Nd doped laser crystal. The method disclosed by the invention is capable of shortening the delay time to 10ms. The delay time of 10ms is higher than perceiving speed which can be distinguished by human eyes, so delay phenomenon cannot be discovered in the use of laser show and stage lighting. In addition, the improved method disclosed by the invention is simple and easy to operate.
Description
Technical field
The invention belongs to the laser technique field, relate to the green light pulse laser of a kind of semiconductor laser as pumping source, especially a kind of green light pulse laser of 808nm pumping is opened bright dipping and is reduced method and Laser Power Devices time of delay.
Background technology
The 808nm semiconductor laser has application as the green light pulse laser of pumping source more in laser performance and light of stage industry, have a very significant disadvantages in the application---and the output that powers up first pulse of back has the delay of 1000ms magnitude.As shown in Figure 2, generally, Laser Power Devices provide regular square wave, because when just opening Laser Power Devices, mixing needs a period of time before the stimulated radiation of Nd laser crystal reaches the critical value of laser output.Because the delay of this magnitude is to be very disadvantageous concerning laser performance and light of stage by the obvious perception of people.This why can occur and postpone relation is arranged with the characteristics of laser crystal itself.Laser crystal is transfused to pump light, produces stimulated radiation, has only the light radiation that produces when stimulated radiation to run up on the critical value, laser output just possibly occur.The delay of first pulse of pulse green (light) laser output promptly is because due to stimulated radiation need accumulate.
Summary of the invention
The objective of the invention is to overcome the shortcoming of above-mentioned prior art; Provide a kind of green light pulse laser to open bright dipping and reduce method and Laser Power Devices time of delay; This method can improve to the pump light input of mixing the Nd laser crystal, reduces to mix the Nd laser crystal and produces the time that stimulated radiation reaches the critical value of laser output.So just can reach the time of reducing the green laser output delay.Can reduce time of delay to the 10ms magnitude.
The objective of the invention is to solve through following technical scheme:
The reduction method that green light pulse laser of the present invention is opened bright dipping time of delay is: make the pulse of Laser Power Devices output spike subpulse that is higher than the square wave high level of rising edge stack at square-wave pulse; Improve and give the input of the pump light of mixing the Nd laser crystal, reduce to mix the Nd laser crystal and produce the time that stimulated radiation reaches the critical value of laser output.
The present invention proposes a kind of Laser Power Devices of realizing the right said method, and this power supply comprises level, first, second and third triode, first, second and third amplifier, the potentiometer and first to 14 resistance; 1 foot of said level is through second grounding through resistance, and 2 foots of level are connected to the in-phase output end of second amplifier through the 4th resistance, and the inverting input of said first amplifier and second amplifier interconnects; The inverting input of first amplifier is connected to 1 foot of level; The in-phase output end of said first amplifier and inverting input are connected to VRE2.5V through the 3rd resistance and first resistance respectively; The in-phase output end of said second amplifier also is connected with the in-phase output end of first amplifier through the 5th resistance;
Said first amplifier is connected with the base stage of the 8th resistance with said first triode and second triode through the 7th resistance respectively with the output of second amplifier; The emitter of said first triode is connected to VRE2.5V, collector electrode are connected to the 3rd amplifier through the tenth resistance in-phase output end; The grounded emitter of said second triode, collector electrode are connected to the upper end of said potentiometer; The upper end of potentiometer also connects VRE2.5V through the 9th resistance, and the lower end of potentiometer is connected with the power ground end of the 3rd amplifier, and the travelling arm of potentiometer connects the in-phase output end of the 3rd amplifier, and the travelling arm of potentiometer is through the 11 grounding through resistance;
The inverting input of said the 3rd amplifier is through the 13,14 grounding through resistances; The output of said the 3rd amplifier connects through the base stage that the 12 resistance is connected to the 3rd triode; The emitter of the 3rd triode is connected between the 13 resistance and the 14 resistance.
The output of above-mentioned the 7th resistance and first amplifier is connected with electric capacity.
Above-mentioned first amplifier is connected with the DC5V power supply.
Above-mentioned the 3rd amplifier is connected with the DC5V power supply.
The present invention has following beneficial effect:
Green light pulse laser of the present invention is opened the reduction method of bright dipping time of delay can be with reducing to the 10ms magnitude time of delay.The delay of 10ms magnitude is owing to be higher than the distinguishable perception velocities of human eye, and in the use of laser performance and light of stage, can not realize has delay phenomenon.And, the present invention is directed to the laser power supply circuit that this kind method designs, it is simple in structure, realizes easily.
Description of drawings
Fig. 1 is the green light pulse laser structure block diagram of pumping source for the 808nm semiconductor laser.
Fig. 2 is a pulse structure sketch map in the prior art;
Wherein: a is 808nm laser power supply pulse square wave; B is a 808nm laser output optical pulse; C is 1064nm laser pulse output square wave; D is the output of 532nm green laser pulse.
Fig. 3 is a pulse structure sketch map of the present invention;
Wherein: a ' is 808nm laser power supply pulse square wave; B ' is a 808nm laser output optical pulse; C ' is 1064nm laser pulse output square wave; D ' is the output of 532nm green laser pulse.
Fig. 4 is a laser power supply circuit structure chart of the present invention.
Embodiment
Below in conjunction with accompanying drawing the present invention is done and to describe in further detail:
Referring to Fig. 1: the 808nm semiconductor laser be the green light pulse laser of pumping source by 808nm Laser Modulation power supply, 808nm laser, mix Nd (neodymium) laser crystal and two frequency doubling laser crystals, four parts are formed.The Laser Modulation power supply is given the power supply of 808nm laser with pulse mode; The 808nm laser is just exported the 808nm pump light accordingly; Thereby mix Nd laser crystal absorption 808nm pump light and inspire 1064nm fluorescence; 1064nm fluorescence amplifies through resonant cavity resonance has just exported 1064nm laser, and 1064nm laser is finally exported the 532nm green glow through behind two frequency doubling laser crystals.
Performance for the green light pulse laser that to improve above 808nm semiconductor laser be pumping source; Reduce the green light pulse laser unlatching bright dipping time of delay of 808nm pumping; Referring to Fig. 3; The method that the present invention takes is: through Laser Power Devices are improved; Make the pulse of Laser Power Devices output spike subpulse that is higher than the square wave high level of rising edge stack, give the input of the pump light of mixing the Nd laser crystal, reduce to mix the Nd laser crystal and produce the time that stimulated radiation reaches the critical value of laser output thereby improve at normal square-wave pulse.So just can reach the time of reducing the green laser output delay.When the output modulating pulse of 808nm Laser Modulation power supply was regular square-wave pulse shown in Figure 2, first pulsion phase of 532nm green glow was for first pulse at power supply output square wave.
In order to realize said method, the present invention designs a kind of Laser Power Devices, and this kind circuit comprises level TTL-G1; First, second and third triode Q1, Q2, Q3; First, second and third amplifier U1A, U1B, U2A, potentiometer VRG1, the capacitor C and first to the 14 resistance R 1-R14.
Referring to Fig. 4; More than detailed annexation between each element be: 1 foot of level TTL-G1 is through second resistance R, 2 ground connection; 2 foots of level TTL-G1 are connected to the in-phase output end of the second amplifier U1B through the 4th resistance R 4, and the inverting input of the said first amplifier U1A and the second amplifier U1B interconnects; The inverting input of the first amplifier U1A is connected to 1 foot of level TTL-G1; The in-phase output end of the first amplifier U1A and inverting input are connected to VRE2.5V through the 3rd resistance R 3 and first resistance R 1 respectively; The in-phase output end of the second amplifier U1B also is connected with the in-phase output end of the first amplifier U1A through the 5th resistance R 5;
The first amplifier U1A is connected with the base stage of the 8th resistance R 8 with the first triode Q1 and the second triode Q2 through the 7th resistance R 7 respectively with the output of the second amplifier U1B.The 7th resistance R 7 is connected capacitor C with the output of the first amplifier U1A.The emitter of the first triode Q1 is connected to VRE2.5V, collector electrode are connected to the 3rd amplifier U2A through the tenth resistance R 10 in-phase output end; The grounded emitter of the second triode Q2, collector electrode are connected to the upper end of said potentiometer VRG1; The upper end of potentiometer VRG1 also connects VRE2.5V through the 9th resistance R 9; The lower end of potentiometer VRG1 is connected with the power ground end of the 3rd amplifier U2A; The travelling arm of potentiometer VRG1 connects the in-phase output end of the 3rd amplifier U2A, and the travelling arm of potentiometer VRG1 is through the 11 resistance R 11 ground connection;
The inverting input of the 3rd amplifier U2A is through the 13,14 resistance R 13, R14 ground connection; The output of the 3rd amplifier U2A connects through the base stage that the 12 resistance R 12 is connected to the 3rd triode Q3; The emitter of the 3rd triode Q3 is connected between the 13 resistance R 13 and the 14 resistance R 14.The first amplifier U1A is connected with the DC5V power supply; The 3rd amplifier U2A is connected with the DC5V power supply.
With reference to Fig. 4, the operation principle of above circuit is described below:
(1) when when level TTL-G1 is input as high level: the output of the first amplifier U1A (1 pin) output low level, first triode Q1 conducting this moment provide voltage for 3 pin (being in-phase output end) of the 3rd amplifier U2B; 7 pin of the second amplifier U1B (being output) output low level, this moment, the first triode Q1 did not have influence by 3 pin (i.e. upper end) voltage to potentiometer VRG1.
(2) when being input as the end from TTL-G1 during level: 1 pin (output) the output high level of the first amplifier U1A, this moment, the first triode Q1 provided by 3 pin of giving the 3rd amplifier U2B; 7 pin of the second amplifier U1B (being output) output high level, first triode Q1 conducting this moment undercuts the 3 pin voltages of potentiometer VRG1.
(3) capacity that changes capacitor C 1 in the circuit can change the time length of spike subpulse; The resistance that changes the tenth resistance R 10 in the circuit can change the size of the peak value of spike subpulse.
Claims (5)
1. a green light pulse laser is opened bright dipping and is reduced method time of delay; It is characterized in that: make the pulse of Laser Power Devices output spike subpulse that is higher than the square wave high level of rising edge stack at square-wave pulse; Improve and give the input of the pump light of mixing the Nd laser crystal, reduce to mix the Nd laser crystal and produce the time that stimulated radiation reaches the critical value of laser output.
2. Laser Power Devices of realizing the said method of claim 1; It is characterized in that, comprise level (TTL-G1), first, second and third triode (Q1, Q2, Q3); First, second and third amplifier (U1A, U1B, U2A), the potentiometer (VRG1) and first to 14 resistance (R1-R14); 1 foot of said level (TTL-G1) is through second resistance (R2) ground connection; 2 foots of level (TTL-G1) are connected to the in-phase output end of second amplifier (U1B) through the 4th resistance (R4), and said first amplifier (U1A) interconnects with the inverting input of second amplifier (U1B); The inverting input of first amplifier (U1A) is connected to 1 foot of level (TTL-G1); The in-phase output end of said first amplifier (U1A) and inverting input are connected to VRE2.5V through the 3rd resistance (R3) and first resistance (R1) respectively; The in-phase output end of said second amplifier (U1B) also is connected with the in-phase output end of first amplifier (U1A) through the 5th resistance (R5);
Said first amplifier (U1A) is connected with the base stage of said first triode (Q1) with second triode (Q2) with the 8th resistance (R8) through the 7th resistance (R7) respectively with the output of second amplifier (U1B); The emitter of said first triode (Q1) is connected to VRE2.5V, collector electrode are connected to the 3rd amplifier (U2A) through the tenth resistance (R10) in-phase output end; Grounded emitter, the collector electrode of said second triode (Q2) is connected to the upper end of said potentiometer (VRG1); The upper end of potentiometer (VRG1) also connects VRE2.5V through the 9th resistance (R9); The lower end of potentiometer (VRG1) is connected with the power ground end of the 3rd amplifier (U2A); The travelling arm of potentiometer (VRG1) connects the in-phase output end of the 3rd amplifier (U2A), and the travelling arm of potentiometer (VRG1) is through the 11 resistance (R11) ground connection;
The inverting input of said the 3rd amplifier (U2A) is through the 13,14 resistance (R13, R14) ground connection; The output of said the 3rd amplifier (U2A) connects through the base stage that the 12 resistance (R12) is connected to the 3rd triode (Q3); The emitter of the 3rd triode (Q3) is connected between the 13 resistance (R13) and the 14 resistance (R14).
3. Laser Power Devices according to claim 2 is characterized in that, said the 7th resistance (R7) is connected with electric capacity (C) with the output of first amplifier (U1A).
4. Laser Power Devices according to claim 2 is characterized in that, said first amplifier (U1A) is connected with the DC5V power supply.
5. Laser Power Devices according to claim 2 is characterized in that, said the 3rd amplifier (U2A) is connected with the DC5V power supply.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103582617A CN102427201A (en) | 2011-11-11 | 2011-11-11 | Method for shortening laser emission delay time in processing of starting green light pulse laser and laser power supply |
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| CN2011103582617A CN102427201A (en) | 2011-11-11 | 2011-11-11 | Method for shortening laser emission delay time in processing of starting green light pulse laser and laser power supply |
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| CN102427201A true CN102427201A (en) | 2012-04-25 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111345893A (en) * | 2018-12-24 | 2020-06-30 | 爱科凯能科技（北京）股份有限公司 | Laser medical treatment method and apparatus |
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| US5226051A (en) * | 1991-06-04 | 1993-07-06 | Lightwave Electronics | Laser pump control for output power stabilization |
| JP2001127366A (en) * | 1999-10-25 | 2001-05-11 | Toshiba Corp | Solid-state laser device, method for controlling output thereof and power supply device for solid-state laser |
| US20020009110A1 (en) * | 2000-07-13 | 2002-01-24 | Yoko Inoue | Semiconductor laser excitation solid state laser apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111345893A (en) * | 2018-12-24 | 2020-06-30 | 爱科凯能科技（北京）股份有限公司 | Laser medical treatment method and apparatus |
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Application publication date: 20120425 |