CN103227413B - Semiconductor laser device driving circuit - Google Patents
Semiconductor laser device driving circuit Download PDFInfo
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- CN103227413B CN103227413B CN201310155864.6A CN201310155864A CN103227413B CN 103227413 B CN103227413 B CN 103227413B CN 201310155864 A CN201310155864 A CN 201310155864A CN 103227413 B CN103227413 B CN 103227413B
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Abstract
The invention provides a kind of semiconductor laser device driving circuit.This semiconductor laser device driving circuit comprises: pulse shaper, and the waveform for the narrow pulse signal to input carries out shaping, and compresses its pulsewidth further; And power amplification circuit, be connected with pulse shaper, for utilizing high pressure, the narrow pulse signal that paired pulses shaping circuit exports carries out power amplification, and by the high level output of the narrow pulse signal after power amplification to laser positive pole, low level output is to laser negative pole.Semiconductor laser device driving circuit of the present invention compresses the pulsewidth of narrow pulse signal further by pulse shaper, and improved the power of narrow pulse signal by power amplification circuit, thus achieve the semiconductor laser device driving circuit simultaneously meeting high power and burst pulse two kinds of demands.
Description
Technical field
The present invention relates to semiconductor laser field, particularly relate to a kind of semiconductor laser device driving circuit.
Background technology
Along with semiconductor laser application is expanded rapidly, progressively replace He-Ne laser in many aspects, oneself is widely used in optical-fibre communications, integrated optics, laser printing, laser beam flying, CD storage technique, laser ranging, laser radar, light-pumped solid state laser, impulse Doppler imaging, 3D rendering system, optical fiber temperature measuring sensor etc. field.In this various fields, particularly in laser acquisition and field of target recognition, the performance such as the recognition capability of target, spacing precision, anti-interference and low-power consumption, all depend on the laser pulse quality of semiconductor laser, and the light pulse of semiconductor laser is the electric pulse directly modulation produced by semiconductor laser device driving circuit obtains, namely the fine or not decisive factor of laser pulse quality is the quality of the pulse power.Therefore, semiconductor laser device driving circuit research is the key technology in laser acquisition and target identification technology.
For the narrow-pulse laser obtaining high-peak power and good waveforms exports, need the impact that reduction ghost effect as far as possible brings.Laser ranging requires in a few nanosecond to tens nanoseconds the pulsewidth of laser pulse and rising edge, produce in the circuit of narrow pulse high-current in reality, pulsewidth and rising edge are mainly subject to the restriction of switching device speed and circuit parasitic parameter (impact of stray inductance is especially serious in big current situation).Except noting PCB fabric swatch when circuit design, necessary measure in circuit, also to be taked to reduce parasitic effects.
Fig. 1 is the schematic diagram of a prior art semiconductor laser device driving circuit example.Please refer to Fig. 1, in this semiconductor laser device driving circuit, when square-wave signal is low level, direct current is that the power supply of+50V is charged to C1 by R3, and voltage is to U; When square-wave signal is high level, make transistor Q1 conducting, the collector electrode of Q1 will produce drive current makes Q2 conducting, electric charge on such C1, will within the time of nanosecond, by the source electrode of Q2 to drain electrode, arrive emitter by wire again to the base stage of Q1, whole process time only has several nanosecond, and electric current is very large.For this semiconductor laser device driving circuit, although pulsewidth can reach 5ns, need external 50V high voltage source.In addition, other also have some drive circuit examples, and output current (power) is very large but pulsewidth is several musec order, is not suitable with the needs of the occasions such as laser fuze.
Realizing in process of the present invention, applicant finds: in the prior art, lack a kind of semiconductor laser device driving circuit simultaneously meeting high power and burst pulse two kinds of demands.
Summary of the invention
(1) technical problem that will solve
For solving above-mentioned one or more problems, the invention provides a kind of conductor laser drive circuit, to meet high power and burst pulse two kinds of demands simultaneously.
(2) technical scheme
According to an aspect of the present invention, a kind of semiconductor laser device driving circuit is provided.This semiconductor laser device driving circuit comprises: pulse shaper, and the waveform for the narrow pulse signal to input carries out shaping, and compresses its pulsewidth further; And power amplification circuit, be connected with described pulse shaper, for utilizing high pressure, the narrow pulse signal that paired pulses shaping circuit exports carries out power amplification, and by the high level output of the narrow pulse signal after power amplification to laser positive pole, low level output is to laser negative pole.
(3) beneficial effect
As can be seen from technique scheme, semiconductor laser device driving circuit of the present invention has following beneficial effect:
(1) compressed the pulsewidth of narrow pulse signal by pulse shaper further, and improve the power of narrow pulse signal by power amplification circuit, thus achieve the semiconductor laser device driving circuit simultaneously meeting high power and burst pulse two kinds of demands;
(2) in power amplification circuit, have employed
low speed, high internal resistancemOSFET, achieve the Laser output of burst pulse, high-power, steep rising edge,
due to the low internal resistance of MOSFET, the load resistance in addition in circuit is lower, so electrical signal energy is mainly carried on laser, improves laser output power.
(3) produce in circuit at pulse square wave signal, adopt charging, electric discharge mode separately, the square wave that duty ratio is adjustable can be obtained.
(4) in booster circuit, have employed the various ways such as slope-compensation, ensure the stability of circuit and the adjustable, efficient of output voltage, enough high voltage supply high-power MOSFETs can be obtained.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of prior art burst pulse high power semiconductor lasers drive circuit;
Fig. 2 is the structural representation of embodiment of the present invention semiconductor laser device driving circuit;
Fig. 3 is the schematic diagram of pulse square wave signal circuit for generating in semiconductor laser device driving circuit shown in Fig. 2;
Fig. 4 is the schematic diagram of pulse shaper in semiconductor laser device driving circuit shown in Fig. 2;
Fig. 5 is the schematic diagram of booster circuit in semiconductor laser device driving circuit shown in Fig. 2;
Fig. 6 is the schematic diagram of power amplification circuit in semiconductor laser device driving circuit shown in Fig. 2;
Fig. 7 is the schematic diagram of protective circuit in semiconductor laser device driving circuit shown in Fig. 2;
Fig. 8 is the waveform of the laser output signal that the output signal of the present embodiment semiconductor laser device driving circuit and detector detect.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.It should be noted that, in accompanying drawing or specification describe, similar or identical part all uses identical figure number.The implementation not illustrating in accompanying drawing or describe is form known to a person of ordinary skill in the art in art.In addition, although herein can providing package containing the demonstration of the parameter of particular value, should be appreciated that, parameter without the need to definitely equaling corresponding value, but can be similar to corresponding value in acceptable error margin or design constraint.
In one exemplary embodiment of the present invention; provide a kind of semiconductor laser device driving circuit; please refer to Fig. 2, this semiconductor laser device driving circuit comprises: pulse square wave signal circuit for generating, pulse shaper, power amplification circuit, booster circuit, semiconductor laser and protective circuit.Wherein: pulse square wave signal circuit for generating, narrow pulse signal is produced; Pulse shaper, is connected with described pulse square wave signal circuit for generating, for carrying out shaping to the waveform of described narrow pulse signal, and compresses its pulsewidth further; Booster circuit, for providing a high pressure; Power amplification circuit, be connected with booster circuit with described pulse shaper, the high pressure produced for utilizing booster circuit, the narrow pulse signal that paired pulses shaping circuit exports carries out power amplification, and by the high level output of the narrow pulse signal after power amplification to laser positive pole, low level output is to laser negative pole; Protective circuit, its two ends are connected with the positive pole of laser and negative pole respectively, for the surge impact in isolated power amplifying circuit output signal, with the infringement preventing this surge impact from bringing laser.
Below respectively each part of the present embodiment semiconductor laser device driving circuit is described in detail.
Pulse square wave signal circuit for generating
In the present embodiment, pulse square wave signal circuit for generating for generation of narrow pulse signal, and exports this narrow pulse signal to described pulse shaper.
Fig. 3 is the schematic diagram of pulse square wave signal circuit for generating in semiconductor laser device driving circuit shown in Fig. 2.Please refer to Fig. 2, this pulse square wave signal circuit for generating comprises: NE555 integrated circuit (IC) chip, the first diode D1, the first resistance R1, the second resistance R2, the 3rd resistance R3, the first electric capacity C1, the second electric capacity C2, the 3rd electric capacity C3, the first potentiometer W1.
Each pin of this NE555 integrated circuit (IC) chip arranges as follows: GND pin ground connection; TRIG pin is connected to the negative pole of the first diode D1 and the first end of the 3rd resistance R3, and by the first electric capacity C1 ground connection; C VOLT pin is by the second electric capacity C2 ground connection; THR pin is connected to TRIG pin; RST pin is connected to VCC power supply; VCC pin is connected to VCC power supply; DISC pin is connected to the positive pole of the first diode D1 and second end of the 3rd resistance R3, and is connected to VCC power supply by the first potentiometer W1 and the second resistance; OUT pin is connected to VCC power supply by the first resistance R1, and as the output of pulse square wave signal circuit for generating; VCC power supply is by the 3rd electric capacity C3 ground connection.
Wherein, VCC power supply is+15V DC power supply.The parameter value of the first electric capacity C1, the second electric capacity C2, the 3rd electric capacity C3, the first resistance R1, the second resistance R2 and the 3rd resistance R3 adopts the general of NE555 to be worth, and provides no longer in detail herein.By regulating the first potentiometer W1 within the scope of 0-10k ohm, can output pulse width be narrow pulse signal within the scope of 7 μ s-300 μ s.
In the present embodiment, adopting charging, electric discharge mode separately because pulse square wave signal produces circuit, by regulating the first potentiometer W1, the square wave that duty ratio is adjustable can be obtained, thus can flexible Circuit tuning parameter according to the actual requirements, obtain suitable impulse waveform.
Pulse shaper
In the present embodiment, pulse shaper is used for carrying out shaping to the waveform of the narrow pulse signal of input, and compresses its pulsewidth further.
Fig. 4 is the schematic diagram of pulse shaper in semiconductor laser device driving circuit shown in Fig. 1.Please refer to Fig. 4, this pulse shaper comprises: high speed MOS driver (TPS2829) and differential circuit.
Each pin of this TPS2829 chip arranges as follows: GND pin ground connection; VCC pin connects VCC power supply, and IN pin is connected to the output of pulse square wave signal circuit for generating; OUT pin is connected to the input of differential circuit.
This differential circuit comprises: the 4th electric capacity C4 and the second adjustable resistance W2.Wherein, the first end of the 4th resistance is connected to the OUT pin of TPS2829 chip, and the second end is divided into two-way, and the first via directly exports the C4_r output as pulse shaper, and the second tunnel is by the second potentiometer W2 ground connection.
Wherein, VCC power supply is+15V, and the capacitance of the 4th electric capacity C4 is 680pF.By regulating the second potentiometer W2 within the scope of 0-20kohm, the narrow pulse signal that pulse square wave signal generator exports can be converted to pulsewidth is impulse waveform within the scope of 10ns-1 μ s.The design parameter value of the 4th electric capacity C4 and the second potentiometer W2 needs to need to calculate according to self.
In the present embodiment, because pulse shaper have employed TPS2829 chip and differential circuit, thus there is this pulse shaper can obtain the square-wave signal of more burst pulse.
Booster circuit
In the present embodiment, booster circuit for generation of one higher than the high pressure of 100V, and by power amplifier described in this high input voltage.
Fig. 5 is the schematic diagram of booster circuit in semiconductor laser device driving circuit shown in Fig. 1.Please refer to Fig. 5, this booster circuit comprises: Controlled in Current Mode and Based chip UC3843, resistance R13 ~ R20, electric capacity C7 ~ C11, the second triode Q2, the 3rd MOSFET pipe-Q3, the 3rd potentiometer W3, the first inductance L 1, fast diode D3.
Each pin of this Controlled in Current Mode and Based chip UC3843 arranges as follows:
First pin connects the input of the 9th electric capacity C9 and the 15 resistance R15,9th electric capacity C9 and the 15 resistance R15 is in parallel, export termination the 16 resistance R16, the other end of the 16 resistance R16 is connected with the 3rd potentiometer W3 middle tone node, one termination the 17 resistance R17 of the 3rd potentiometer W3, the 17 resistance R17 other end is connected to the ground; Another termination the 18 resistance R18 of the 3rd potentiometer W3, the 18 resistance R18 is connected with the negative pole of the 3rd diode D3;
Second pin is connected to the common junction place of the 16 resistance R16 and the 3rd potentiometer W3.
Three-prong is connected to the common port of the 12 resistance R12, the 11 resistance R11 and the 8th electric capacity C8, another termination the 20 resistance R20 of the 12 resistance R12 and the common port of the 3rd MOS transistor Q3-source electrode, R20 other end ground connection; The other end of the 11 resistance R11 is connected with the emitter-base bandgap grading of the second triode Q2, and the base stage of the second triode Q2 is connected to the 4th pin of UC3843 chip, and is connected with one end of the 7th electric capacity C7;
5th pin ground connection;
6th pin is output pin, be connected with the 14 resistance R14, the other end of the 14 resistance R14 is connected with the grid of the 3rd MOSFET pipe Q3, the drain electrode of the 3rd MOSFET pipe Q3 is connected with the positive pole of the output of the first inductance L 1 and the 3rd diode D3, the negative pole of the 3rd diode D3 is connected with the 11 electric capacity C11 positive pole, 11 electric capacity C11 minus earth, the negative pole of the 3rd diode D3 is for exporting high direct voltage HV.3rd potentiometer W3 can regulation output voltage amplitude;
7th pin is connected with the 19 resistance R19, another termination power V of R19
cC.V
cCbe connected with the tenth electric capacity C10, the first inductance L 1, the tenth electric capacity C10 other end ground connection;
Octal is connected with the collector electrode of the second triode Q2, is connected to the 13 resistance R13 between the base stage of the second triode Q2 and collector electrode.The other end ground connection simultaneously of the 7th electric capacity C7 and the 8th electric capacity C8.
In the present embodiment, because booster circuit have employed Controlled in Current Mode and Based chip UC3843, the 3rd MOSFET pipe Q3, the first inductance L 1, the 3rd diode D3, the 11 resistance C11, the 3rd potentiometer W3, can be the direct current high output voltage that high pressure reaches 100V by the direct current+15V Power convert of input, the direct voltage of output be by the 3rd potentiometer W3 amplitude of accommodation size.Simultaneously because have employed the second triode Q2 and the 11 resistance R11 is slope-compensation part, reduce UC3843 internal oscillator, make its steady operation at current-mode.
Power amplification circuit
Power amplification circuit, be connected with described pulse shaper, for utilizing high pressure, the narrow pulse signal that paired pulses shaping circuit exports carries out power amplification, and by the high level output of the narrow pulse signal after power amplification to laser positive pole, low level output is to laser negative pole.
Fig. 6 is the schematic diagram of power amplification circuit in semiconductor laser device driving circuit shown in Fig. 1.Please refer to Fig. 6, this power amplification circuit comprises: high speed low internal resistance MOS switching tube Q1, the 5th storage capacitor C5, the 4th resistance R4, the 5th resistance R5, the 6th resistance R6, the 7th resistance R7, the 8th resistance R8 and the 9th resistance R9.
In this power amplification circuit, the grid of MOSFET pipe Q1 is connected to the C4_r output of pulse shaper by the 4th resistance R4, and by the 5th resistance R5 ground connection, its source electrode (S pole) ground connection; 8th resistance R8 and the 9th resistance R9 is in parallel, and both the first common ports are connected to the drain electrode of MOSFET pipe Q1 (D pole), and the second common port, as the LD_-output of power amplifier, is connected to the negative pole of laser; 6th resistance R6 and the 7th resistance R7 is in parallel, and both the first common end groundings, the second common port as the LD_+ output of power amplifier, is connected to the positive pole of laser after being connected to the HV output of booster circuit by the 5th electric capacity C5.
In the power amplification circuit shown in Fig. 6, when MOSFET pipe Q1 ends, by the 5th electric capacity C5 and the 6th resistance R6, the 7th resistance R7, electric capacity C5 is charged to H
v, H
vbe 0 to 100V, maximum voltage limits by MOSFET pipe Q1 maximum working voltage.When the triggering burst pulse produced by pulse shaping amplification circuit arrives time, MOSFET pipe Q1 conducting, 5th electric capacity C5 forms discharge loop by MOSFET pipe Q1 and laser (LD), thus on laser, produces a big current burst pulse, drive laser work.
In the present embodiment, MOSFET pipe Q1 adopts the rise time to be the chip irf7495 of 13ns, controlled by this quick high-power MOSFET, the high pressure that booster circuit is exported to quick bulky capacitor discharge and recharge, thus provides burst pulse, powerful square-wave signal for laser.
Protective circuit
Because power network fluctuation causes, or power-off suddenly, to power on, may cause surging signal in drive singal, thus produce laser and greatly damage, therefore, semiconductor laser device driving circuit of the present invention also comprises protective circuit.The two ends of this protective circuit are connected, for the surge impact in isolated power amplifying circuit output signal, with the infringement preventing this surge impact from bringing laser with the positive pole of laser and negative pole respectively.
Fig. 7 is the schematic diagram of protective circuit in semiconductor laser device driving circuit shown in Fig. 1.Please refer to Fig. 7, this protective circuit comprises: the second diode D2, the 6th electric capacity C6, the tenth resistance R10, wherein:
The positive pole of the second diode D2 is connected with the negative pole (LD_-) of semiconductor laser, negative pole is connected with the positive pole (LD_+) of semiconductor laser, owing to have employed backward diode D2, the surging signal oppositely entering laser is released, is unlikely to be applied to laser backward end and causes laser to damage;
The first end of the tenth resistance R10 is connected to the negative pole (LD_-) of semiconductor laser LD, and its second end is connected to the first end of the 6th electric capacity C6, and the positive pole (LD_+) that second end of the 6th electric capacity C6 is connected to semiconductor laser is connected.The effect that 6th electric capacity C6 and the tenth resistance R10 has decay to overshoot signal and postpones, protection laser is not crossed large-signal and is damaged.
The present embodiment, for needing+15V stabilized voltage power supply, does not need external high voltage power supply and signal source, can obtain 20ns bandwidth, drive circuit that pulse power reaches 120W.Utilize this embodiment to obtain following circuit module of good performance, its pulse duration is the narrowest is 20ns, continuously adjustabe; Pulse repetition frequency is 100Hz ~ 100KHz; On 1 Ohmic resistance, pulse current 0-58A is adjustable.In test examples, under 100Hz repetition rate, in circuit board minimum output voltage situation, when pulse duration is 20ns, peak optical powers reaches 2.85W; Laser center wavelength 905nm, half-breadth 20ns.The maximum 58A of this circuit pulse output current, drives the laser of 200W peak power more than sufficient.
Fig. 8 is the output signal of the present embodiment semiconductor laser device driving circuit and utilizes this output signal drive laser, the laser output pulse waveform that detector is tested.Wherein, the curve of laser output pulse waveform tested for detector of curve one; Curve two is the curve of circuit board output waveform.As seen from Figure 8, circuit board outputs extremely narrow pulse, and can drive high-speed laser work, and the pulse that laser exports also has caught up with circuit output waveform substantially, reaches designing requirement.
So far, the present embodiment semiconductor laser device driving circuit is introduced complete.By above-mentioned explanation, those skilled in the art should have semiconductor laser device driving circuit of the present invention and have clearly been familiar with.
It should be noted that, the above-mentioned definition to each element is not limited in the various concrete structure or shape mentioned in execution mode, and those of ordinary skill in the art can replace it with knowing simply, such as:
(1) pulse square wave signal circuit for generating can not included in circuit, adopt outer signal source, be applicable to the occasion that circuit board size requirement is very little like this, simultaneously, booster circuit can adopt external high pressure (HV) or boost chip, to reduce circuit board size;
(2) pulse square wave signal circuit for generating is not limited to NE555 chip, and other similar chips can also be adopted as CPLD programmable chip etc., also can be used for producing pulse square wave;
(3) in power amplification circuit, high-power narrow pulsewidth MOSFET can replace irf7495 with irf7473, and its pin is completely compatible;
(5) those skilled in the art according to the size of drive circuit, the demand of function, can carry out flexible combination or setting to some functional module in circuit or the relevant parameter in circuit.
Semiconductor laser device driving circuit of the present invention can obtain the Laser Driven of high-peak power, narrow spaces, fast rising edge, and peak power, pulsewidth, the cycle is all adjustable, can be widely used in laser ranging, laser radar, light-pumped solid state laser, impulse Doppler imaging, 3D rendering system, optical fiber temperature measuring sensor etc. field.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (4)
1. a semiconductor laser device driving circuit, is characterized in that, comprising:
Pulse square wave signal circuit for generating, for generation of narrow pulse signal, and exports this narrow pulse signal to pulse shaper, and described pulse square wave signal circuit for generating comprises NE555 integrated circuit (IC) chip, first diode, first resistance, second resistance, 3rd resistance, first electric capacity, second electric capacity, 3rd electric capacity, first potentiometer, each pin of this NE555 integrated circuit (IC) chip arranges as follows: GND pin ground connection, and TRIG pin is connected to the negative pole of the first diode and the first end of the 3rd resistance, and by the first capacity earth, C VOLT pin is by the second capacity earth, and THR pin is connected to TRIG pin, and RST pin is connected to VCC power supply, and VCC pin is connected to VCC power supply, and DISC pin is connected to the positive pole of the first diode and the second end of the 3rd resistance, and being connected to VCC power supply by the first potentiometer and the second resistance, OUT pin is connected to VCC power supply by the first resistance, and as the output of pulse square wave signal circuit for generating, VCC power supply is by the 3rd capacity earth,
Pulse shaper, waveform for the narrow pulse signal to input carries out shaping, and compress its pulsewidth further, comprise TPS2829 chip and differential circuit, each pin of described TPS2829 chip arranges as follows: GND pin ground connection, VCC pin connects VCC power supply, IN pin is connected to the output of pulse square wave signal circuit for generating, OUT pin is connected to the input of differential circuit, described differential circuit comprises the 4th electric capacity and the second potentiometer, wherein, the first end of the 4th electric capacity is connected to the OUT pin of TPS2829 chip, second end is divided into two-way, the first via directly exports the output as pulse shaper, second tunnel is by the second potentiometer ground connection,
Booster circuit, for generation of a high pressure, and by this high input voltage power amplification circuit, described booster circuit comprises UC3843 chip, second triode, 3rd MOSFET pipe, 3rd potentiometer, first inductance and the fast diode as the 3rd diode, wherein, each pin of this UC3843 chip arranges as follows: the first pin connects the input of the 9th electric capacity and the 15 resistance, 9th electric capacity and the 15 resistor coupled in parallel, export termination the 16 resistance, the other end of the 16 resistance is connected with the 3rd potentiometer middle tone node, one termination the 17 resistance of the 3rd potentiometer, the 17 resistance other end is connected to the ground, another termination the 18 resistance of 3rd potentiometer, 18 resistance is connected with the negative pole of the 3rd diode, second pin is connected to the common junction place of the 16 resistance and the 3rd potentiometer, three-prong is connected to the 12 resistance, the common port of the 11 resistance and the 8th electric capacity, another termination the 20 resistance of 12 resistance and the common port of the 3rd MOSFET pipe source electrode, 20 resistance other end ground connection, the other end of the 11 resistance is connected with the emitter-base bandgap grading of the second triode, the base stage of the second triode is connected to the 4th pin of UC3843 chip, and be connected with one end of the 7th electric capacity C7, 5th pin ground connection, 6th pin is output pin, be connected with the 14 resistance, the other end of the 14 resistance is connected with the grid of the 3rd MOSFET pipe, the drain electrode of the 3rd MOSFET pipe is connected with the positive pole of the output of the first inductance and the 3rd diode, the negative pole of the 3rd diode is connected with the 11 capacitance cathode, 11 electric capacity minus earth, the negative pole of the 3rd diode exports high direct voltage, 3rd potentiometer regulation output voltage amplitude, 7th pin is connected with the 19 resistance, another termination VCC power supply of 19 resistance, VCC power supply and the tenth electric capacity, first inductance is connected, tenth electric capacity other end ground connection, 8th pin is connected with the collector electrode of the second triode, the 13 resistance is connected between the base stage of the second triode and collector electrode, the other end ground connection simultaneously of the 7th electric capacity and the 8th electric capacity,
Power amplification circuit, be connected with described pulse shaper, for utilizing high pressure, the narrow pulse signal that paired pulses shaping circuit exports carries out power amplification, and by the high level output of the narrow pulse signal after power amplification to laser positive pole, low level output is to laser negative pole, comprise a MOSFET pipe, 5th storage capacitor, 4th resistance, 5th resistance, 6th resistance, 7th resistance, 8th resistance and the 9th resistance, in power amplification circuit, the grid of a described MOSFET pipe is connected to the output of pulse shaper by the 4th resistance, and by the 5th grounding through resistance, the source ground of the one MOSFET pipe, 8th resistance and the 9th resistor coupled in parallel, both the first common ports are connected to the drain electrode of a MOSFET pipe, second common port is connected to the negative pole of laser as the second output of power amplification circuit, 6th resistance and the 7th resistor coupled in parallel, both the first common end groundings, be connected to the positive pole of laser as the first output of power amplification circuit after second common port is connected to the DC high-voltage output end of booster circuit by the 5th electric capacity, wherein, during a described MOSFET pipe cut-off, by the 5th electric capacity and the 6th resistance, 7th resistance, 5th electric capacity is charged to the high pressure of 0 to 100V, when the triggering burst pulse produced by pulse shaper arrives time, one MOSFET pipe conducting, 5th electric capacity forms discharge loop by a MOSFET pipe and laser, thus a big current burst pulse is produced on laser, drive laser works, and
Protective circuit, its two ends are connected with the positive pole of laser and negative pole respectively, for the surge impact in isolated power amplifying circuit output signal, with the infringement preventing this surge impact from bringing laser, described protective circuit comprises the second diode, 6th electric capacity, tenth resistance, wherein, the positive pole of the second diode is connected with the negative pole of semiconductor laser, negative pole is connected with the positive pole of semiconductor laser, the first end of the tenth resistance is connected to the negative pole of semiconductor laser, its second end is connected to the first end of the 6th electric capacity, second end of the 6th electric capacity is connected to the positive pole of semiconductor laser.
2. semiconductor laser device driving circuit according to claim 1, is characterized in that, described VCC power supply is+15V; The capacitance of described 4th electric capacity is 680pF; The adjustable range of described second potentiometer is 0-20k ohm.
3. semiconductor laser device driving circuit according to claim 1, is characterized in that, in described power amplification circuit, a described MOSFET pipe for the rise time be the chip irf7495 of 13ns.
4. semiconductor laser device driving circuit according to claim 1, is characterized in that, the adjustable range of described first potentiometer is 0-10k ohm, and the pulsewidth of described narrow pulse signal is 7 μ s-300 μ s.
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| CN110492349B (en) * | 2019-08-20 | 2021-03-19 | 上海禾赛科技股份有限公司 | Drive circuit, drive method and laser system |
| CN112444963B (en) * | 2019-08-30 | 2023-04-07 | 成都理想境界科技有限公司 | Light source driving circuit and display module |
| CN111474550B (en) * | 2020-05-28 | 2024-07-09 | 洛阳顶扬光电技术有限公司 | Program-controlled self-adaptive narrow pulse driving circuit suitable for high-precision ranging |
| CN111682399B (en) * | 2020-06-20 | 2021-07-20 | 深圳市灵明光子科技有限公司 | Laser transmitter driving circuit, system and high-speed optical communication device |
| CN112152593B (en) * | 2020-09-18 | 2024-05-10 | 深圳瑞波光电子有限公司 | Driving circuit and laser device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN100514776C (en) * | 2007-08-22 | 2009-07-15 | 中国科学院上海光学精密机械研究所 | Continuously adjustable nanosecond pulse semiconductor laser driving power supply |
| CN101640373A (en) * | 2008-07-31 | 2010-02-03 | 中国科学院半导体研究所 | Continuous adjustable nanosecond narrow-pulse semiconductor laser module |
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