CN102427058A - Method of manufacturing circuit pattern through sputtering technology and rewiring method of chip - Google Patents
Method of manufacturing circuit pattern through sputtering technology and rewiring method of chip Download PDFInfo
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- CN102427058A CN102427058A CN2011103525031A CN201110352503A CN102427058A CN 102427058 A CN102427058 A CN 102427058A CN 2011103525031 A CN2011103525031 A CN 2011103525031A CN 201110352503 A CN201110352503 A CN 201110352503A CN 102427058 A CN102427058 A CN 102427058A
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Abstract
The invention discloses a method of manufacturing a circuit pattern through a sputtering technology and a rewiring method of a chip; the method of manufacturing the circuit pattern through the sputtering technology comprises the following steps of: arranging a jig between a component to be sputtered and a cathode of sputtering equipment, and arranging a through groove with a set shape on the jig; starting the sputtering equipment, leading atoms sputtered by the cathode to pass through the through groove and then be adhered on the surface of the component, and forming the circuit pattern. According to the technical scheme of the embodiment, the circuit pattern with the set shape can be directly manufactured by sputtering; and compared with the traditional technical scheme of firstly sputtering a whole surface and then etching the circuit pattern, the technical scheme has the advantages that an etching step is omitted, a technological process is shortened and the technology difficulty is reduced.
Description
Technical field
The present invention relates to the circuit board making technical field, be specifically related to a kind of through the method for sputtering technology making line pattern and a kind of rewiring method of chip.
Background technology
(Integrated Circuit, IC) chip has to densification and multifunction Development Trend integrated circuit.Circuit on the current chip has the most reached 28nm.When line density increases, and the input/output port of chip (input/output, I/O) density is also increasing, and the mode of four limit array outlets commonly used has been difficult to meet the demands on the chip.
So rewiring (retry design line, the RDL) technology of face array pad have occurred four limit array pads are converted into.Adopt RDL technology, can chip four limit array pads be converted into the middle face array pad of chip, can increase the size and the spacing of pad,, reduce the difficulty of encapsulation to make full use of the middle zone of chip.Said four limit array pads are positioned at the edge of chip surface near its four edges.
General rewiring method may further comprise the steps:
101, at chip surface photoresist is set, comprises: at the full surface-coated photoresist of chip, through exposure and development, make chip four limits need the original pad of RDL to expose, other position then is capped;
102, sputter is carried out on the full surface of chip, being comprised: first sputter one deck titanium, sputter layer of copper again.
103, make line pattern, comprising: the chip surface after sputter applies one deck photoresist again, then through exposure, development and etching, behind the line pattern that formation needs, removes the photoresist of this coating.
104, electroplate the new pad of formation; Comprise: one deck photoresist is set again at the chip surface that forms line pattern; Through exposure and development, expose in each zone that makes the chip intermediate demand form new pad, and other part is then covered by photoresist; Electroplate then, exposing the new pad of zone formation.
Wherein, it is a plurality of to need the original pad of RDL to comprise, each original pad can corresponding new pad, and original pad is connected with the corresponding new pad line pattern through formation.
Through said method, can realize needing the original pad of RDL to transfer in the middle of the chip on chip four limits, still, above-mentioned RDL method step is more, and flow process is complicated.
Summary of the invention
The embodiment of the invention provides a kind of and makes the method for line pattern and a kind of rewiring method of chip through sputtering technology, can shortened process, reduce technology difficulty.
A kind of method of making line pattern through sputtering technology comprises:
One tool is set between the negative electrode of the components and parts of treating sputter and sputtering equipment, offers the groove of setting shape on the said tool;
Start sputtering equipment, make atom that said cathodic sputtering goes out through behind the said groove attached to the surface of said components and parts, form line pattern.
A kind of rewiring method of chip comprises:
At chip surface photoresist is set, said photoresist covers the zone except that original pad on the chip;
Adopt the arbitrary described method of claim 1 to 3 that chip is carried out sputter, the line pattern that formation needs;
At chip surface photoresist is set once more, said photoresist covers the zone except that the new pad locations of design in advance;
Said new pad locations is electroplated, form new pad, said new pad is connected with said original pad through said line pattern.
Embodiment of the invention method be employed in treat to be provided with between sputter components and parts and the sputtering equipment negative electrode one offer the tool of setting the shape groove technical scheme; Can directly produce the line pattern of setting shape through sputter; The full surface sputtering of existing relatively elder generation is the technical scheme of circuit etching figure again; Reduce etching step, shortened technological process, reduced technology difficulty.
Description of drawings
Fig. 1 be the embodiment of the invention provide pass through the flow chart that sputtering technology is made the method for line pattern;
Fig. 2 is the sketch map of the tool that provides of the embodiment of the invention;
Fig. 3 is the sketch map when adopting embodiment of the invention method to carry out sputter;
Fig. 4 is the rewiring method of the chip that provides of the embodiment of the invention;
Fig. 5 a-5d is the sketch map of the rewiring method chips of the chip that provides of the embodiment of the invention in each stage.
Embodiment
The embodiment of the invention provides a kind of method of making line pattern through sputtering technology, and this method has been omitted etching step, can shortened process, reduce technology difficulty.The embodiment of the invention also provides the rewiring method of relevant chip.Below be elaborated respectively.
Embodiment one,
Please refer to Fig. 1, the embodiment of the invention provides a kind of method of making line pattern through sputtering technology, comprising:
201, a tool is set between the negative electrode of the components and parts of treating sputter and sputtering equipment, offers the groove of setting shape on the said tool.
Existing sputtering method generally is components and parts of treating sputter; Like circuit board or chip etc.; Carry out full surface sputtering, that is: with components and parts be placed on sputtering equipment sputtering chamber in, start sputtering equipment; The all surfaces that acts on components and parts that the atom that the cathodic sputtering of sputtering equipment is gone out has no to block forms one deck sputtering layer at all surfaces of components and parts.Follow-up, utilize the sputtering layer that method such as etching is removed does not need the position again, only reservations needs the sputtering layer at position, thus the formation line pattern.
In the present embodiment,, designed and produced a kind of tool in order to shorten flow process.Please refer to Fig. 2, offer the groove 411 of setting shape on this tool 410.The shape of groove 411 confirms according to the line pattern of preparing in that the components and parts surface forms, and under the ideal situation, can make the shape of shape and line pattern of groove 411 identical, and size dimension is also identical.Like this, need the position of the corresponding tool in line pattern position to offer groove 411 on the components and parts, the atom that the cathodic sputtering of sputtering equipment goes out just can pass through from these grooves 411, acts on the components and parts surface, on components and parts, forms identical line pattern.
Optional; The shape of the shape of the groove of offering on the tool 411 and the line pattern that needs can be identical on layout; But slightly different on the size, that is, the shape of groove 411 is dwindled according to preset ratio with respect to line pattern; For example, the overall dimensions of groove 411 can be 95% of a line pattern overall dimensions.
202, start sputtering equipment, make atom that said cathodic sputtering goes out through behind the said groove attached to the surface of said components and parts, form line pattern.
Please refer to Fig. 3, can and treat that the components and parts 420 of sputter all are placed in the sputtering chamber of sputtering equipment with described tool 410, and make tool 410 between the negative electrode 430 of components and parts 420 and sputtering equipment.Can be provided with the alignment pin and the location hole of pairing on tool 410 and the components and parts 420, the perhaps align member of other form is so that components and parts 420 and tool 410 aligned.
After starting sputtering equipment, the atom that the cathodic sputtering of sputtering equipment goes out acts on the tool.Wherein, have the position of groove at tool, the atom that sputters can act on the components and parts through groove.Sputter finishes, and the sputtering layer that on components and parts, forms can form the line pattern of setting shape according to the shape of groove.
Wherein, the distance between components and parts and the tool can be regulated as required.Components and parts and tool are in contact with one another, fit together fully, to avoid in the groove edge because of the wide problem of circuit that causes around the plating phenomenon forming.Optional, when the overall dimensions of the groove of on tool, offering 411 is slightly less than the line pattern overall dimensions, can make components and parts and tool at a distance of certain distance, specifically can confirm according to the practical application adjustment.
To sum up; Present embodiment provides a kind of method of making line pattern through sputtering technology, this method be employed in treat to be provided with between sputter components and parts and the sputtering equipment negative electrode one offer the tool of setting the shape groove technical scheme, can directly produce the line pattern of setting shape through sputter; The full surface sputtering of existing relatively elder generation is the technical scheme of circuit etching figure again; Reduce etching step, thereby shortened technological process, reduced technology difficulty.
Embodiment two,
Please refer to Fig. 4, the embodiment of the invention provides a kind of rewiring method of chip, comprising:
301, at chip surface photoresist is set, said photoresist covers the zone except that original pad on the chip.
Shown in Fig. 5 a; Can all apply one deck photoresist 460 on the surface of chip 440; Then, through exposure and developing process, remove the photoresist 460 that needs original pad 450 positions of RDL on the chip; These original pads 450 are exposed, and other position is still covered on the chip 440 by photoresist 460.
302, adopt embodiment one described method that chip is carried out sputter, the line pattern that formation needs.
Shown in Fig. 5 b; This step adopts embodiment one described method of making line pattern through sputtering technology; Chip 440 is carried out sputter; Through on tool, offering groove, directly obtain the line pattern 470 that needs, and do not need secondary to apply photoresist and carry out step such as etching at chip 440 surface sputterings by setting shape.The line pattern 470 that forms comprises two above circuits, and an end of every circuit can connect an original pad 450, and the other end then extends to the middle part of chip 440, and the described other end can be bigger, as the new pad locations of preparation.
303, at chip surface photoresist is set once more, said photoresist covers the zone except that the new pad locations of design in advance.
Shown in Fig. 5 c; In order to form new pad, at chip surface another layer photoetching glue 480 is set once more in this step, then in chip 440 middle parts; Through exposure and developing process; Remove the photoresist of new pad locations on the chip 440, these new pad locations are exposed, and other position is still covered on the chip 440 by photoresist.
304, said new pad locations is electroplated, form new pad, said new pad is connected with said original pad through said line pattern.
Shown in Fig. 5 d, said new pad locations to be electroplated, the coating of electroplating in new pad locations forms new pad 490, and each new pad 490 is connected with an original pad 450 through a circuit respectively.So far, realization is transferred to chip four limit array pads in the middle of the chip, is converted into face array pad.
With respect to only taking the original pad of chip surface near the edge of its four edges; Transfer to the space that the middle new pad of chip can make full use of the chip middle part; The original pad of ratio that new pad can design is bigger; Spacing between the new pad also can be bigger, thereby reduce the difficulty of encapsulation.
To sum up; The embodiment of the invention provides a kind of rewiring method of chip; This method is through can directly producing the line pattern of setting shape through sputter, and the full surface sputtering of existing relatively elder generation is the technical scheme of circuit etching figure again, has reduced etching step; Thereby shortened technological process, reduced technology difficulty.
More than pass through to the embodiment of the invention provided that sputtering technology is made the method for line pattern and the rewiring method of chip has been carried out detailed introduction; But the explanation of above embodiment just is used for helping to understand method of the present invention and core concept thereof, should not be construed as limitation of the present invention.Those skilled in the art are in the technical scope that the present invention discloses, and the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.
Claims (6)
1. a method of making line pattern through sputtering technology is characterized in that, comprising:
One tool is set between the negative electrode of the components and parts of treating sputter and sputtering equipment, offers the groove of setting shape on the said tool;
Start sputtering equipment, make atom that said cathodic sputtering goes out through behind the said groove attached to the surface of said components and parts, form line pattern.
2. method according to claim 1 is characterized in that:
The groove of offering on the said tool and the shape and size of said line pattern are identical, and said components and parts and said tool are in contact with one another.
3. method according to claim 1 is characterized in that:
The shape of the groove of offering on the said tool is identical with the layout of the shape of said line pattern, but size dwindles by preset ratio, and said components and parts and said tool are in contact with one another or the space certain distance.
4. the rewiring method of a chip is characterized in that, comprising:
At chip surface photoresist is set, said photoresist covers the zone except that original pad on the chip;
Adopt the arbitrary described method of claim 1 to 3 that chip is carried out sputter, the line pattern that formation needs;
At chip surface photoresist is set once more, said photoresist covers the zone except that the new pad locations of design in advance;
Said new pad locations is electroplated, form new pad, said new pad is connected with said original pad through said line pattern.
5. method according to claim 4 is characterized in that:
Said line pattern comprises two above circuits, and an end of every circuit connects an original pad, and the other end then connects a new pad.
6. method according to claim 4 is characterized in that:
The area of said new pad is greater than the area of said original pad, and the spacing between the said new pad is greater than the spacing between the original pad.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110352503.1A CN102427058B (en) | 2011-11-09 | 2011-11-09 | Method of manufacturing circuit pattern through sputtering technology and rewiring method of chip |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110352503.1A CN102427058B (en) | 2011-11-09 | 2011-11-09 | Method of manufacturing circuit pattern through sputtering technology and rewiring method of chip |
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| CN102427058A true CN102427058A (en) | 2012-04-25 |
| CN102427058B CN102427058B (en) | 2015-07-22 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030203101A1 (en) * | 2002-04-24 | 2003-10-30 | Sipix Imaging, Inc. | Process for forming a patterned thin film conductive structure on a substrate |
| CN1521818A (en) * | 2003-01-30 | 2004-08-18 | 矽品精密工业股份有限公司 | Semiconductor chip package and process of operation |
| CN1630457A (en) * | 2003-12-15 | 2005-06-22 | 宸鸿光电科技股份有限公司 | Method for arranging electric control circuit on touch control panel by using metal filming technique |
| JP2006019522A (en) * | 2004-07-01 | 2006-01-19 | Nitto Denko Corp | Wiring circuit board and manufacturing method thereof |
| CN101812669A (en) * | 2010-05-10 | 2010-08-25 | 赫得纳米科技(昆山)有限公司 | Product positioning and sputtering jig |
-
2011
- 2011-11-09 CN CN201110352503.1A patent/CN102427058B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030203101A1 (en) * | 2002-04-24 | 2003-10-30 | Sipix Imaging, Inc. | Process for forming a patterned thin film conductive structure on a substrate |
| CN1521818A (en) * | 2003-01-30 | 2004-08-18 | 矽品精密工业股份有限公司 | Semiconductor chip package and process of operation |
| CN1630457A (en) * | 2003-12-15 | 2005-06-22 | 宸鸿光电科技股份有限公司 | Method for arranging electric control circuit on touch control panel by using metal filming technique |
| JP2006019522A (en) * | 2004-07-01 | 2006-01-19 | Nitto Denko Corp | Wiring circuit board and manufacturing method thereof |
| CN101812669A (en) * | 2010-05-10 | 2010-08-25 | 赫得纳米科技(昆山)有限公司 | Product positioning and sputtering jig |
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| CN102427058B (en) | 2015-07-22 |
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Address after: 518053 Nanshan District, Guangdong, overseas Chinese town, No. East Road, No. 99 Patentee after: SHENZHEN SHENNAN CIRCUIT CO., LTD. Address before: 518000 Nanshan District, Guangdong, overseas Chinese town, No. East Road, No. 99 Patentee before: Shenzhen Shennan Circuits Co., Ltd. |