CN102422149B - 多晶片的检查方法 - Google Patents
多晶片的检查方法 Download PDFInfo
- Publication number
- CN102422149B CN102422149B CN201080020208.XA CN201080020208A CN102422149B CN 102422149 B CN102422149 B CN 102422149B CN 201080020208 A CN201080020208 A CN 201080020208A CN 102422149 B CN102422149 B CN 102422149B
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- Prior art keywords
- wafer
- camera
- light source
- inspection method
- irradiation position
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000007689 inspection Methods 0.000 title claims abstract description 32
- 230000007547 defect Effects 0.000 claims abstract description 57
- 230000003287 optical effect Effects 0.000 claims abstract description 29
- 238000002425 crystallisation Methods 0.000 claims description 26
- 230000008025 crystallization Effects 0.000 claims description 26
- 238000005286 illumination Methods 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 4
- 230000001678 irradiating effect Effects 0.000 abstract description 2
- 238000001514 detection method Methods 0.000 description 6
- 230000001788 irregular Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 3
- 238000010612 desalination reaction Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009102 absorption Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3554—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for determining moisture content
- G01N21/3559—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for determining moisture content in sheets, e.g. in paper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009-130725 | 2009-05-29 | ||
JP2009130725 | 2009-05-29 | ||
JP2009-186304 | 2009-08-11 | ||
JP2009186304 | 2009-08-11 | ||
PCT/JP2010/057094 WO2010137431A1 (ja) | 2009-05-29 | 2010-04-21 | 多結晶ウエハの検査方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102422149A CN102422149A (zh) | 2012-04-18 |
CN102422149B true CN102422149B (zh) | 2014-03-19 |
Family
ID=43222548
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080020208.XA Expired - Fee Related CN102422149B (zh) | 2009-05-29 | 2010-04-21 | 多晶片的检查方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5559163B2 (zh) |
KR (1) | KR101323035B1 (zh) |
CN (1) | CN102422149B (zh) |
TW (1) | TWI468674B (zh) |
WO (1) | WO2010137431A1 (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102680102A (zh) * | 2012-04-28 | 2012-09-19 | 江南大学 | 基于机器视觉的太阳能硅晶片颜色自动检测方法 |
JP2014190797A (ja) * | 2013-03-27 | 2014-10-06 | Tokushima Densei Kk | シリコンウェハの欠陥検査装置 |
TWI557407B (zh) * | 2014-03-05 | 2016-11-11 | 晶元光電股份有限公司 | 晶粒檢測方法 |
KR101522365B1 (ko) * | 2014-05-28 | 2015-05-21 | 이영우 | 빗각조명을 이용한 기판 검사장치 |
KR101602733B1 (ko) * | 2014-10-28 | 2016-03-11 | 한국교통대학교산학협력단 | 웨이퍼 검사장치 및 웨이퍼 검사방법 |
TWI702390B (zh) | 2014-12-05 | 2020-08-21 | 美商克萊譚克公司 | 在工作件中用於缺陷偵測的裝置,方法及電腦程式產品 |
CN105738379B (zh) * | 2014-12-12 | 2018-10-19 | 上海和辉光电有限公司 | 一种多晶硅薄膜的检测装置及检测方法 |
CN107369740A (zh) * | 2017-07-17 | 2017-11-21 | 苏州天准科技股份有限公司 | 一种用于检测太阳能硅片隐裂的光学检测装置及检测方法 |
CN107907549A (zh) * | 2017-11-13 | 2018-04-13 | 武汉华星光电半导体显示技术有限公司 | 基板检查设备及基板检查方法 |
US10724965B2 (en) | 2018-02-09 | 2020-07-28 | Massachusetts Institute Of Technology | Systems and methods for crack detection |
JP7063181B2 (ja) * | 2018-08-09 | 2022-05-09 | 株式会社Sumco | ウェーハの検査方法および検査装置 |
CN109765183B (zh) * | 2019-03-28 | 2023-11-24 | 青岛海鼎通讯技术有限公司 | 一种手机屏检测装置及其使用方法 |
MY202103A (en) * | 2019-04-30 | 2024-04-03 | Tt Vision Tech Sdn Bhd | An apparatus for detecting defects in an object and method thereof |
CN112129772A (zh) * | 2019-06-24 | 2020-12-25 | 杭州元色科技有限公司 | 缺陷检测***以及方法 |
CN110487814A (zh) * | 2019-08-13 | 2019-11-22 | 东莞市创明电池技术有限公司 | 电池铝片缺陷检测装置 |
JP6755603B1 (ja) * | 2019-12-25 | 2020-09-16 | 上野精機株式会社 | 電子部品の処理装置 |
TWI797689B (zh) * | 2021-05-24 | 2023-04-01 | 馬來西亞商正齊科技有限公司 | 檢查電子元件內部缺陷的裝置及方法 |
CN116913797B (zh) * | 2023-07-14 | 2024-02-13 | 无锡九霄科技有限公司 | 一种晶圆键合质量检测装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001305072A (ja) * | 2000-04-25 | 2001-10-31 | Advantest Corp | 基板の欠陥検出方法及び装置 |
US20010054693A1 (en) * | 1998-08-21 | 2001-12-27 | Trw Inc. | Method and apparatus for inspection of a substrate by use of a ring illuminator |
JP2007218638A (ja) * | 2006-02-14 | 2007-08-30 | Sharp Corp | 多結晶半導体ウエハの割れ検査装置および割れ検査方法 |
JP2008198966A (ja) * | 2007-02-08 | 2008-08-28 | Nippon Electro Sensari Device Kk | ウエーハ欠陥検査装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3187759B2 (ja) * | 1997-12-09 | 2001-07-11 | 株式会社アドバンテスト | 有機汚染検出・除去装置及びその有機汚染検出・除去方法並びに化学汚染検出・除去装置及びその化学汚染検出・除去方法 |
JP4363368B2 (ja) * | 2005-06-13 | 2009-11-11 | 住友電気工業株式会社 | 化合物半導体部材のダメージ評価方法、及び化合物半導体部材の製造方法 |
DE102005061785B4 (de) * | 2005-12-23 | 2008-04-03 | Basler Ag | Verfahren und Vorrichtung zum Erkennen von Rissen in Silizium-Wafern |
KR20090060435A (ko) * | 2006-09-12 | 2009-06-12 | 루돌프 테크놀로지스 인코퍼레이티드 | 편광 이미징 |
-
2010
- 2010-04-21 KR KR1020117027655A patent/KR101323035B1/ko active IP Right Grant
- 2010-04-21 JP JP2011515956A patent/JP5559163B2/ja not_active Expired - Fee Related
- 2010-04-21 CN CN201080020208.XA patent/CN102422149B/zh not_active Expired - Fee Related
- 2010-04-21 WO PCT/JP2010/057094 patent/WO2010137431A1/ja active Application Filing
- 2010-05-28 TW TW99117151A patent/TWI468674B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010054693A1 (en) * | 1998-08-21 | 2001-12-27 | Trw Inc. | Method and apparatus for inspection of a substrate by use of a ring illuminator |
JP2001305072A (ja) * | 2000-04-25 | 2001-10-31 | Advantest Corp | 基板の欠陥検出方法及び装置 |
JP2007218638A (ja) * | 2006-02-14 | 2007-08-30 | Sharp Corp | 多結晶半導体ウエハの割れ検査装置および割れ検査方法 |
JP2008198966A (ja) * | 2007-02-08 | 2008-08-28 | Nippon Electro Sensari Device Kk | ウエーハ欠陥検査装置 |
Also Published As
Publication number | Publication date |
---|---|
JP5559163B2 (ja) | 2014-07-23 |
CN102422149A (zh) | 2012-04-18 |
JPWO2010137431A1 (ja) | 2012-11-12 |
WO2010137431A1 (ja) | 2010-12-02 |
KR20120022993A (ko) | 2012-03-12 |
KR101323035B1 (ko) | 2013-10-29 |
TW201100788A (en) | 2011-01-01 |
TWI468674B (zh) | 2015-01-11 |
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PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: OMATSU NTC CORP. Free format text: FORMER OWNER: LOSSEV TECHNOLOGY CORP. Effective date: 20150605 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150605 Address after: Toyama County Patentee after: Omatsu NTC Corp. Address before: Toyama County Patentee before: Lossev Technology Corp. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140319 Termination date: 20210421 |
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CF01 | Termination of patent right due to non-payment of annual fee |