CN102403451A - 一种磁性随机存取存储器磁性隧道结层制造方法 - Google Patents
一种磁性随机存取存储器磁性隧道结层制造方法 Download PDFInfo
- Publication number
- CN102403451A CN102403451A CN2010102857196A CN201010285719A CN102403451A CN 102403451 A CN102403451 A CN 102403451A CN 2010102857196 A CN2010102857196 A CN 2010102857196A CN 201010285719 A CN201010285719 A CN 201010285719A CN 102403451 A CN102403451 A CN 102403451A
- Authority
- CN
- China
- Prior art keywords
- layer
- mtj
- mask
- substrate
- mtj structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010285719.6A CN102403451B (zh) | 2010-09-17 | 2010-09-17 | 一种磁性随机存取存储器磁性隧道结层制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010285719.6A CN102403451B (zh) | 2010-09-17 | 2010-09-17 | 一种磁性随机存取存储器磁性隧道结层制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102403451A true CN102403451A (zh) | 2012-04-04 |
CN102403451B CN102403451B (zh) | 2014-11-26 |
Family
ID=45885441
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010285719.6A Active CN102403451B (zh) | 2010-09-17 | 2010-09-17 | 一种磁性随机存取存储器磁性隧道结层制造方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102403451B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106876423A (zh) * | 2015-09-30 | 2017-06-20 | 台湾积体电路制造股份有限公司 | 集成有磁性隧道结的半导体结构及其制造方法 |
CN108140724A (zh) * | 2015-11-23 | 2018-06-08 | 英特尔公司 | 用于磁阻式随机存储器器件的电接触部 |
CN110098321A (zh) * | 2018-01-30 | 2019-08-06 | 上海磁宇信息科技有限公司 | 一种制备磁性随机存储器导电硬掩模的方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6365419B1 (en) * | 2000-08-28 | 2002-04-02 | Motorola, Inc. | High density MRAM cell array |
US20030207500A1 (en) * | 2002-05-02 | 2003-11-06 | Osram Opto Semiconductors Gmbh | Encapsulation for organic electronic devices |
US20040043525A1 (en) * | 2002-08-30 | 2004-03-04 | Tohoku Pioneer Corporation | Method of forming protection film for covering electronic component and electronic device having protection film |
CN1501523A (zh) * | 2002-11-15 | 2004-06-02 | ���ǵ�����ʽ���� | 磁性隧道结器件及其制造方法 |
-
2010
- 2010-09-17 CN CN201010285719.6A patent/CN102403451B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6365419B1 (en) * | 2000-08-28 | 2002-04-02 | Motorola, Inc. | High density MRAM cell array |
US20030207500A1 (en) * | 2002-05-02 | 2003-11-06 | Osram Opto Semiconductors Gmbh | Encapsulation for organic electronic devices |
US20040043525A1 (en) * | 2002-08-30 | 2004-03-04 | Tohoku Pioneer Corporation | Method of forming protection film for covering electronic component and electronic device having protection film |
CN1501523A (zh) * | 2002-11-15 | 2004-06-02 | ���ǵ�����ʽ���� | 磁性隧道结器件及其制造方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106876423A (zh) * | 2015-09-30 | 2017-06-20 | 台湾积体电路制造股份有限公司 | 集成有磁性隧道结的半导体结构及其制造方法 |
CN106876423B (zh) * | 2015-09-30 | 2019-12-10 | 台湾积体电路制造股份有限公司 | 集成有磁性隧道结的半导体结构及其制造方法 |
CN108140724A (zh) * | 2015-11-23 | 2018-06-08 | 英特尔公司 | 用于磁阻式随机存储器器件的电接触部 |
CN110098321A (zh) * | 2018-01-30 | 2019-08-06 | 上海磁宇信息科技有限公司 | 一种制备磁性随机存储器导电硬掩模的方法 |
CN110098321B (zh) * | 2018-01-30 | 2023-07-04 | 上海磁宇信息科技有限公司 | 一种制备磁性随机存储器导电硬掩模的方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102403451B (zh) | 2014-11-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102142399B (zh) | 集成电路结构的制造方法 | |
CN104347631B (zh) | 使用组合间隔件的rram结构和工艺 | |
CN103489831B (zh) | 具有多层式存储节点的半导体器件及其制造方法 | |
CN103066198B (zh) | 一种新型的磁隧穿结器件及其制造方法 | |
US9076720B2 (en) | Magnetic random access memory and a method of fabricating the same | |
CN106847754B (zh) | 半导体存储器件及其制作方法 | |
CN100345214C (zh) | Mram设备及制造用在mram结构中的磁轭结构的方法 | |
US12029046B2 (en) | Magnetic tunneling junction (MTJ) element with an amorphous buffer layer and its fabrication process | |
CN110047844B (zh) | 三维垂直单晶体管铁电存储器及其制备方法 | |
US20210359003A1 (en) | Method of forming memory cell | |
CN109411503A (zh) | 一种集成电路及其形成方法 | |
TW201128736A (en) | Method for manufacturing an SRAM and method for manufacturing a semiconductor device | |
TW201939777A (zh) | 磁性記憶裝置及其製造方法 | |
CN103354952A (zh) | 具有改善的尺寸的磁随机存取存储器集成 | |
CN110224059A (zh) | 半导体装置及其形成方法 | |
CN111063797B (zh) | 磁通道接面结构与其制造方法 | |
CN109494192A (zh) | 半导体元件以及其制作方法 | |
EP1471536A2 (en) | Magnetic random access memory cell comprising an oxidation preventing layer and method of manufacturing the same | |
CN109148258A (zh) | 形成氧化层的方法 | |
CN108807401A (zh) | 一种半导体器件及其制造方法 | |
CN102403451B (zh) | 一种磁性随机存取存储器磁性隧道结层制造方法 | |
CN103066199B (zh) | 一种新型的磁隧穿结器件及其制造方法 | |
TW202111973A (zh) | 磁性記憶裝置 | |
CN109755243A (zh) | 半导体元件及其制作方法 | |
CN104347797B (zh) | 磁性随机存储器及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Effective date: 20130614 Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Free format text: FORMER OWNER: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION Effective date: 20130614 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201203 PUDONG NEW AREA, SHANGHAI TO: 100176 DAXING, BEIJING |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20130614 Address after: 100176 No. 18 Wenchang Avenue, Beijing economic and Technological Development Zone Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 No. 18 Zhangjiang Road, Shanghai Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |