CN102393139A - Roller way type solar battery silicon wafer sintering furnace - Google Patents
Roller way type solar battery silicon wafer sintering furnace Download PDFInfo
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- CN102393139A CN102393139A CN2011103640947A CN201110364094A CN102393139A CN 102393139 A CN102393139 A CN 102393139A CN 2011103640947 A CN2011103640947 A CN 2011103640947A CN 201110364094 A CN201110364094 A CN 201110364094A CN 102393139 A CN102393139 A CN 102393139A
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D3/00—Charging; Discharging; Manipulation of charge
- F27D3/02—Skids or tracks for heavy objects
- F27D3/026—Skids or tracks for heavy objects transport or conveyor rolls for furnaces; roller rails
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Especially adapted for treating semiconductor wafers
Abstract
The invention discloses a roller way type solar battery silicon wafer sintering furnace. In the sintering furnace, a carrier for transferring a silicon wafer is a roller way capable of transferring along one direction, and the roller way comprises a plurality of rotatable rollers, wherein the roller which is in contact with the silicon wafer is made of non-metallic materials; and a forced air cooling zone is arranged between a sintering zone and a blanking zone so as to replace the traditional water cooling zone. Compared with the traditional metal mesh belt type sintering furnace, the roller way type solar battery silicon wafer sintering furnace not only can avoid the pollution and the occurrence of 'reticulated mottles' of the silicon wafer in the transferring process, but also can increase the transferring speed, realize fast heating and cooling, achieve an ideal temperature peak effect and improve the battery sintering quality; and because the water cooling zone is cancelled, the length of a furnace body can be shortened, and the energy consumption can be reduced.
Description
Technical field
The present invention relates to a kind of solar cell silicon wafer sintering furnace, especially relate to a kind of solar cell silicon wafer sintering furnace that adopts roller-way transmission silicon chip.
Background technology
In the whole production technological process of solar cell silicon wafer, diffusion, printing and sintering three process are topmost.Wherein, Sintering process is mainly used in the slurry that oven dry is printed on silicon chip surface; Burn the organic solvent that from slurry, volatilizes, the synchronous positive and negative of sintering solar cell silicon wafer makes the metal electrode and silicon chip formation good Ohmic contact that print to the silicon chip spreading mass; Be beneficial to the electric current output of battery, bring the efficient that battery should reach into play.If the Ohmic contact between silicon chip and the electrode is bad, then can causes the part electric current to export, thereby reduce the energy conversion efficiency of battery sheet.That is to say that sintering circuit is to make crystal silicon chip really have a vital step of photoelectric converting function, the quality of sintering quality is the height of the final solar cell piece efficient of influence directly.Therefore, the performance quality of agglomerating plant directly affects the quality of battery sheet.
At present, solar cell both domestic and external is manufactured producer and is mainly used net belt type tunnel sintering furnace, sintering furnace vertically on be provided with preheating binder removal district, heating zone, sintering zone and cooling area successively.At the heating fluorescent tube of zones of different layout different densities, control each regional temperature with this.The silicon chip that is printed with electrode passes through the different furnace temperature district of sintering furnace successively through the guipure transmission, accomplishes the electrode sintering process of preheating binder removal, intensification, sintering and cooling.Though this net belt type tunnel sintering technology is comparative maturity, has following problem: the one, silicon chip directly contacts with metal mesh belt, and the metal pair silicon chip has pollution; The 2nd, the speed of service of common net belt tunnel sintering furnace is lower; Generally have only 2000mm/min, and current battery sheet sintering process requires to reach the above high speed sintering of 5000mm/min, if carry out the high speed sintering with net belt type tunnel sintering furnace; Can make the running stability variation of guipure; Back electrode face at the battery sheet causes reticulate pattern, influences presentation quality, even can cause fragmentation; The 3rd, metal mesh belt can be accumulated a large amount of heats, the high speed sintering how to make guipure lower the temperature in a short period of time, to guarantee the tapping temperature of battery sheet, also be a more scabrous problem; The 4th, because the accumulation of heat effect of guipure; Make sintering furnace can not reach 850 ℃～950 ℃ of the sintering temperatures of arts demand in the short period of time, reach sintering temperature after, even if adopt water-cooled but; Can not lower the temperature very soon, be difficult to satisfy the requirement of silicon chip cooldown rate >=70 ℃/S; The 5th, the accumulation of heat effect of guipure has also increased the length of body of heater intensification section and temperature descending section, and general net belt type tunnel sintering furnace needs 10 meters～12 meters length could accomplish whole sintering process, thereby has increased the volume and the cost of sintering furnace; The 6th, because the quality of guipure will be far longer than the quality of silicon chip, therefore, the heat that heating guipure and cooling mesh conveyer are taken away will be much larger than the needed heat of silicon chip sintering, thereby the energy consumption of sintering furnace is by improve greatly.
Chinese patent CN102032777A has proposed a kind of no guipure silicon chip sintering furnace to problems such as net belt type sintering furnace energy consumption are high, the thermal efficiency is low, floor space is big.The transport that its operation principle is made up of one group of analog bracket and movable support bracket has replaced metal mesh belt, periodically accomplishes rising, reach, decline and backward movement through movable support bracket, and the silicon chip that is placed on the analog bracket is progressively moved forward.Analog bracket and movable support bracket support the stand-off of silicon chip and process, are provided with ceramic coating at its outer surface with steel wire.Though this patent has solved the above-mentioned shortcoming that the net belt type transmission exists to a certain extent; But this reciprocating type mode of transport; Still there is following problem: the one, silicon chip can not steadily be carried continuously, and transporting velocity is not easy to improve, be difficult to satisfy the transport requirement of 5000mm/min; The 2nd, in order to satisfy the needs that silicon chip constantly moves up and down in handling process; Will strengthen the inner effective depth of burner hearth; Because the upper and lower temperature difference of furnace temperature is greater than the horizontal temperature difference, will certainly cause a temperature fluctuation of silicon chip process big like this, sintering temperature is not easy accurate control; The 3rd, the transmission course of silicon chip is that the interactive action through movable support bracket and analog bracket carries out batch (-type) and moves; Can not steadily carry continuously; Therefore, can not in burner hearth, place the temperature measuring equipment of following the silicon chip motion, realize dynamic temperature measurement silicon chip sintering overall process; The 4th, its stand-off that supports silicon chip is processed, is provided with ceramic coating at its outer surface with steel wire; Because the thermal expansion coefficient difference of steel wire and ceramic coating is bigger; Under 850 ℃～950 ℃ high temperature, cause ceramic coating to come off easily; Cause silicon chip directly to contact with steel wire, forfeiture prevents the effect of wafer contamination thus.For this reason, the applicant has developed a kind of roller bed type solar cell silicon wafer sintering furnace, efficiently solves the deficiency that above two kinds of mode of movements exist.
Summary of the invention
The present invention is directed to the drawback of prior art, a kind of roller bed type solar cell silicon wafer sintering furnace is provided, in said sintering furnace, the carrier of transmission silicon chip is to comprise a plurality of rotatable roll bodies in this roller-way along the roller-way of a direction transmission.
Preferably, the material with the silicon chip contact site of roller-way is nonmetal; The material with the silicon chip contact site of employed roller-way is different from the material that is used for supporting with the position of live-roller gear.
Preferably, the material with the silicon chip contact site of roller-way is a non-metallic material, and the material that is used for supporting with the part of live-roller gear is a metal material.
Preferably, at least a portion in the roll body of composition roller-way is ganoid plain-barreled roll body or surperficial scraggly roll body.The scraggly roll body in surface comprises: shape of threads roll body, the surface that the surface has a groove has the not isometrical roll body that some point-like or protruding roll body, the surface of wire have some circular things.
Preferably, at least a portion in the roll body of composition roller-way is solid roll body or hollow roll body.That is to say that the roll body of forming roller-way can all be solid roll body, also can all be hollow roll body, also can be the roller-way that the solid roll body of part becomes with the hollow roll body mutual group of part.
Preferably, the material with the silicon chip contact site of roller-way is pottery, quartz-ceramics or quartz glass; Composition with the material silicon chip contact site perhaps roller-way is SiO
2Or Si
3N
4Or SiC, or SiO
2And Al
2O
3In conjunction with material.
Preferably, the transmission speed of roller-way is adjustable arbitrarily below 15000mm/min, and perhaps transmission speed is between 4000mm/min～12000mm/min.
Preferably, between the sintering zone of sintering furnace and discharging area, be provided with the air blast cooling district, silicon chip is accomplished and is directly got into the air blast cooling district behind the sintering and cool off fast; Said air blast cooling district can comprise: leave the sintering zone and air blast cooling district roller-way that continues to forward and the blowing device that is arranged on roller-way top, air blast cooling district and/or below; The blowing device that is arranged on roller-way above and below, air blast cooling district is positioned opposite to each other, and cold wind blows to silicon chip simultaneously from two directions up and down.
Preferably, the cold wind that blowing device blew out can be the mixture of pure air, nitrogen or pure air and nitrogen, or the above-mentioned gas of process cooling processing.
Preferably, the blow pressure of said blowing device is adjustable arbitrarily below 6000Pa, satisfies silicon chip cooldown rate >=80 ℃/S with the air quantity of its coupling.
Preferably, the body of heater of sintering furnace is made up of two parts that can separate up and down, and the first half body of heater can vertically upwards freely rise under the effect of mechanical force.
Preferably, the mode of heating that uses of sintering furnace is that infrared radiation heating, heating using microwave or heating wire add the independent a kind of thermal source pined for or the combination in any of above-mentioned three kinds of thermals source.
Roller bed type solar cell silicon wafer sintering furnace provided by the invention; To pollution-free, the no reticulate pattern of silicon chip, fast with not bonding, the transporting velocity of cell backside, have a narrow range of temperature, temperature repeatability and good stability, intensification cooling are fast, need not water-cooled but, length is short; Operating efficiency can be cut down the consumption of energy, improve greatly, and temperature spikes, raising battery sintering quality can be effectively realized.
Description of drawings
Fig. 1 is the front view of an embodiment of roller bed type solar cell silicon wafer sintering furnace of the present invention;
Fig. 2 is the side view of Fig. 1;
Fig. 3 is the sketch map of a kind of roll body structure in the roller bed type solar cell silicon wafer sintering furnace of the present invention;
Fig. 4 is the sketch map of another kind of roll body structure in the roller bed type solar cell silicon wafer sintering furnace of the present invention.
Wherein, Reference numeral is following:
Screw thread, 13 nonmetal annulus, 14 metal roller shafts on protrusion on 1 upper furnace body, 2 lower furnace bodies, 3 roller-ways, 4 heating tubes, 5 silicon chips, 6 blowing devices, 7 furnace body supports, 8 hinges, 9 roller-ways, 10 roller-way metallic support spindle noses, 11 bearings, 12 roller-ways.
The specific embodiment
Below in conjunction with accompanying drawing the present invention is done further detailed description, can implement according to this with reference to the specification literal to make those skilled in the art.
As depicted in figs. 1 and 2; The invention discloses a kind of solar cell silicon wafer sintering furnace; Its body of heater is made up of feeding area, baking zone, pre-burning district, sintering zone, air blast cooling district and discharging area; Do not have the required water cooling zone of traditional net belt type sintering furnace, can directly get into the cooling of air blast cooling district behind the silicon chip sintering.The carrier of its transmission silicon chip is can be along the roller-way 3 of a direction transmission; By some rotatable high temperature resistant roll body support silicon chip 5, through roll body continuous running with silicon chip continuously, steadily, transmission forward flatly, in transmission course, accomplish operations such as oven dry, pre-burning, sintering and cooling successively.The outside of body of heater can be provided with furnace body support 7, is used for body of heater is supported.And body of heater can be divided into upper furnace body 1 and lower furnace body 2.Can pass through driving mechanism, upper furnace body 1 and lower furnace body were opened in 2 minutes, so that operation or maintenance.This driving mechanism can be a hinge 8.
In order to guarantee that under 850 ℃～950 ℃ high temperature transmission silicon chip 5 does not pollute silicon chip again, be exposed in the burner hearth, be high temperature resistant and silicon chip not have the non-metallic material of pollution that with the roller-way 3 of silicon chip 5 contacts site spendable material has SiO
2Or Si
3N
4Or SiC, or SiO
2And Al
2O
3In conjunction with material etc.Wherein highly purified fused quartz ceramic roller and quartz glass tube and since to silicon chip 5 do not pollute, have stable high-temperature performance and cost relatively low, become the preferred material of silicon chip 5 transmission roller channels.Among the present invention,, eliminated the metallic pollution problem that the metal mesh belt transmission brings effectively because the roller-way 3 that high temperature contacts with silicon chip 5 has down adopted the material that silicon chip 5 is not had pollution.
In order to guarantee that roller-way has good behavior in service, realize silicon chip 5 smooth transport, the present invention has designed a kind of metal and nonmetal compound roller-way 3.Promptly be exposed in the burner hearth, the part of support and transmission silicon chip 5 is non-metallic material high temperature resistant, that silicon chip 5 not have pollution.The material that the parts that support gearing are worked at, roller-way two ends outside at burner hearth is the metal material that wearability is good, be convenient to machining, such as stainless steel, heat resisting steel, ordinary steel etc.Working the parts that support gearing can be roller-way metallic support spindle nose 10, and it is supported by bearing 11.Metal section and part is outside at body of heater in that body of heater is inner for roller-way 3 non-metallic parts of this structure, the problem that can effectively prevent as ceramic coating, cause non-metallic part and metal section and part to come off because of coefficient of expansion difference; Simultaneously, be exposed to the nonmetal roller-way 3 in the burner hearth, can prevent effectively that heat is transmitted on the body of heater outside metallic support and transmission mechanism through roll body because thermal conductivity is lower.Avoided metallic support and transmission mechanism Yin Wendu to raise and cisco unity malfunction or reduction in service life.Therefore, this composite construction had both realized that silicon chip 5 was not had the purpose polluted, guaranteed again roller-way 3 for a long time, operation reposefully.
In through roller-way 3 process that running is transmitted silicon chip 5 continuously, silicon chip 5 is moment to contact, be in the relative motion state with roll body all the time.Simultaneously; For contact area, the minimizing accumulation of heat that reduces silicon chip 5 and supporter as much as possible; Eliminate silicon chip 5 large tracts of land and contact bonding and " reticulate pattern " phenomenon that possibly occur with supporter; Like Fig. 3 and shown in Figure 4, the present invention can be in the roll body surface design a kind of shape of threads or circulus, or the structure of some point-like or wire protrusion is arranged.For example, screw thread 12 on the roll body among Fig. 3 and the nonmetal annulus 13 among Fig. 4.And the structure of above-mentioned shape of threads, ring-type or protrusion can sparsely be arranged.For example; Sparsely only contact to each silicon chip with two circuluses; Realizing that roller-way transmits silicon chip with the minimum strong point, silicon chip has formed point or the line of several moments with roller-way in the operation process and has contacted, and is heated and support force all compares evenly; The adhesion that efficiently solves the silicon chip back side and " reticulate pattern " phenomenon have also solved traditional static point simultaneously and have supported the problem because of being heated with the easy fragmentation of discontinuity.In Fig. 4, metal roller shaft 14 can be adopted in the center of roll body, and in the outside of metal roller shaft 14 sheathed nonmetal annulus 13.Silicon chip 5 only contacts with nonmetal annulus 13.Protrusion 9 on the roller-way has been shown among Fig. 2.
In the process that silicon chip 5 transmits through roller-way; All the time a horizontal direction stable and continuous move forward; The motion process that does not have dipping and heaving; Can also realize that simultaneously silicon chip 5 carries evenly, silicon chip 5 passes through each warm area successively in continuous conveying process, just accomplished operations such as oven dry, pre-burning, sintering and cooling.Therefore; Compare with the mode of movement that periodically back and forth moves forward and backward up and down through movable support bracket, silicon chip 5 is progressively moved forward, the roller bed type transmission can not cause disturbance to gas stream in the stove, can not bring fluctuation to furnace temperature; Silicon chip 5 moves in the horizontal direction and does not have upper and lower temperature difference; And be at the uniform velocity mobile, so sintering temperature is even more, the sintering process high conformity, thereby the battery sintering quality is higher.In addition, this continuously, the transmission means of level, can be, in burner hearth, place the temperature measuring equipment that follow silicon chip 5 motions as the guipure transmission, realization is carried out dynamic temperature measurement to silicon chip 5 sintering overall processes.
In order to realize operations such as higher battery sintering quality, higher operating efficiency and roller-way Maintenance and Repair, it is adjustable arbitrarily that the transmission speed of roller-way is set in below the 15000mm/min, and normal operating rate is 4000mm/min～12000mm/min.
In general, after silicon chip 5 was accomplished sintering, The faster the better for cooling rate, and cooldown rate is preferably greater than 80 ℃/S.The present invention is provided with one section air blast cooling district between sintering zone and discharging area; Silicon chip 5 is accomplished sintering, after the sintering furnace burner hearth comes out, is delivered directly on the roller-way 3 in air blast cooling district; In the process that continues transmission forward, accomplish cooling fast, to reach the purpose of fast cooling.The mode that realizes air blast cooling can be the above and below blowing device 6 positioned opposite to each other of the roller-way in the air blast cooling district.Blowing device 6 can be the air grid that has countless apertures, and cold wind concentrates orientations to blow to the silicon chip of carrying at roller-way 5 from two directions up and down simultaneously, and silicon chip 5 is cooled off fast; Usually it is adjustable arbitrarily below 6000Pa to blow to the cold wind pressure of silicon chip 5 through air grid, will satisfy the requirement of silicon chip cooldown rate >=80 ℃/S and don't fragmentation with the air quantity of its coupling.Is in order to make cold wind affact the upper and lower surfaces of silicon chip 5 simultaneously from two directions up and down simultaneously to silicon chip 5 blowings.Make silicon chip 5 cooling the time receive on downforce consistent as far as possible.The one, can make the cooling of silicon chip 5 more even, the 2nd, can prevent that silicon chip 5 from breaking because of stressed inconsistent causing.Can prevent that besides silicon chip 5 from changing traffic direction and track and influence normal transmission under the effect of high-voltage high-speed cold wind.Being provided with the air grid of countless apertures, is in order to realize certain blast and wind speed, to play and concentrate directed blowing to cool off, take away fast the effect of heat to silicon chip.The mixture that adopts pure air, nitrogen or pure air and nitrogen perhaps carries out cooling processing through a cooling device with above-mentioned gas in advance as cooling medium, all is in order to improve rate of temperature fall as soon as possible, to improve cooling-down effect.The pressure cooling procedure of silicon chip 5 is accomplished in that the sintering furnace burner hearth is outside, can not bring any influence to sintering stage because of factors such as the flow velocity of cooling air and the flow directions, thereby guarantee the stability of sintering process.In addition, through roller-way 3 transmission, when silicon chip 5 completion sintering leave burner hearth; Have only the very little silicon chip of thermal capacity 5 to get into and force the cooling zone; To cool off together along with the very big guipure of thermal capacity unlike the such silicon chip 5 of net belt type tunnel sintering furnace, so the silicon chip cooling effect of roller-way 3 transmission is better.Through above measure, can make the cooldown rate of silicon chip 5 reach 150 ℃/more than the S, realized efficiently cooling off, reached preferably the temperature spikes effect fast, having improved the battery sintering quality of sintering battery sheet.
Among the present invention, roller-way 3 all the time on the fixed position in sintering furnace the original place rotate, the frictional force that roller rest road 3 rotates forwards silicon chip 5, roller-way 3 sintering furnace vertically on do not relatively move, have only silicon chip 3 vertically to pass sintering furnace and accomplish whole sintering process.Roller-way 3 is heated to predetermined temperature in sintering furnace, reach thermal balance after; Almost no longer absorb heat, compare with the net belt type sintering furnace, whole sintering process has only the very little silicon chip of quality to take away heat; The pressure cooling procedure of silicon chip 5 is also in the outside completion of sintering furnace burner hearth; Therefore, the roller bed type sintering furnace is compared with net belt type tunnel sintering furnace, has reduced energy consumption widely.Moreover, also can adopt hollow roller-way.Adopt hollow roller-way, can play the effect that reduces accumulation of heat, cuts down the consumption of energy.
For ease roller-way in the burner hearth and fragment are carried out prune job; Sintering furnace body of the present invention is made up of two parts that can separate up and down; Center line with the roller-way horizontal direction is that boundary, upper furnace body 1 can vertically make progress and freely rise, and can accomplish lifting process through hydraulic system or hinged system.In process of production, when anomalies such as discovery fragment, card, start elevator system, rapidly upper furnace body 1 is risen, accomplish cleaning and maintenance activity.
In order to obtain heats preferably, the mode of heating that the present invention adopts is that infrared radiation heating, heating using microwave or heating wire add the independent a kind of thermal source pined for or the combination in any of above-mentioned three kinds of thermals source, and heating tube 4 has been shown in Fig. 1.
Although embodiment of the present invention are open as above; But it is not restricted to listed utilization in specification and the embodiment; It can be applied to various suitable the field of the invention fully, for being familiar with those skilled in the art, can easily realize other modification; Therefore under the universal that does not deviate from claim and equivalency range and limited, the legend that the present invention is not limited to specific details and illustrates here and describe.
Claims (17)
1. a roller bed type solar cell silicon wafer sintering furnace is characterized in that, in said sintering furnace, the carrier of transmission silicon chip is to comprise a plurality of rotatable roll bodies in this roller-way along the roller-way of a direction transmission.
2. roller bed type solar cell silicon wafer sintering furnace according to claim 1 is characterized in that the material with the silicon chip contact site of roller-way is nonmetal.
3. roller bed type solar cell silicon wafer sintering furnace according to claim 2 is characterized in that, the material with the silicon chip contact site of employed roller-way is different from the material that is used for supporting with the position of live-roller gear.
4. according to each described roller bed type solar cell silicon wafer sintering furnace in claim 2 or 3, it is characterized in that the material with the silicon chip contact site of roller-way is a non-metallic material, and the material that is used for supporting with the part of live-roller gear is a metal material.
5. according to each described roller bed type solar cell silicon wafer sintering furnace among the claim 1-3, it is characterized in that at least a portion in the roll body of composition roller-way is ganoid plain-barreled roll body or surperficial scraggly roll body.
6. roller bed type solar cell silicon wafer sintering furnace according to claim 5; It is characterized in that the scraggly roll body in said surface comprises: shape of threads roll body, the surface that the surface has a groove has the not isometrical roll body that some point-like or protruding roll body, the surface of wire have some circular things.
7. according to each described roller bed type solar cell silicon wafer sintering furnace in claim 1-3 and 6, it is characterized in that at least a portion in the roll body of composition roller-way is solid roll body or hollow roll body.
8. according to each described roller bed type solar cell silicon wafer sintering furnace in claim 1-3 and 6, it is characterized in that the material with the silicon chip contact site of roller-way is pottery, quartz-ceramics or quartz glass.
9. according to each described roller bed type solar cell silicon wafer sintering furnace in claim 1-3 and 6, it is characterized in that the material with the silicon chip contact site of roller-way is SiO
2Or Si
3N
4Or SiC, or SiO
2And Al
2O
3In conjunction with material.
10. according to each described roller bed type solar cell silicon wafer sintering furnace in claim 1-3 and 6, it is characterized in that the transmission speed of roller-way is adjustable arbitrarily below 15000mm/min, perhaps transmission speed is between 4000mm/min～12000mm/min.
11., it is characterized in that according to each described roller bed type solar cell silicon wafer sintering furnace in claim 1-3 and 6, between the sintering zone of sintering furnace and discharging area, be provided with the air blast cooling district, silicon chip is accomplished and is directly got into the air blast cooling district behind the sintering and cool off fast.
12. roller bed type solar cell silicon wafer sintering furnace according to claim 11; It is characterized in that; Said air blast cooling district comprises: leave the sintering zone and air blast cooling district roller-way that continues to forward and the blowing device that is arranged on roller-way top, air blast cooling district and/or below.
13. roller bed type solar cell silicon wafer sintering furnace according to claim 12 is characterized in that the blowing device that is arranged on roller-way above and below, air blast cooling district is positioned opposite to each other, and cold wind blows to silicon chip simultaneously from two directions up and down.
14. according to each described roller bed type solar cell silicon wafer sintering furnace in claim 12 or 13; It is characterized in that; The cold wind that blowing device blew out is the mixture of pure air, nitrogen or pure air and nitrogen, or the above-mentioned gas of process cooling processing.
15. according to each described roller bed type solar cell silicon wafer sintering furnace in claim 12 or 13, it is characterized in that the blow pressure of said blowing device is adjustable arbitrarily below 6000Pa, satisfy silicon chip cooldown rate >=80 ℃/S with the air quantity of its coupling.
16. according to each described roller bed type solar cell silicon wafer sintering furnace in claim 1-3 and 6; It is characterized in that; The body of heater of said sintering furnace is made up of two parts that can separate up and down, and the first half body of heater can vertically upwards freely rise under the effect of mechanical force.
17. according to each described roller bed type solar cell silicon wafer sintering furnace in claim 1-3 and 6; It is characterized in that the mode of heating that said sintering furnace uses is that infrared radiation heating, heating using microwave or heating wire add the independent a kind of thermal source pined for or the combination in any of above-mentioned three kinds of thermals source.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103640947A CN102393139A (en) | 2011-11-16 | 2011-11-16 | Roller way type solar battery silicon wafer sintering furnace |
| PCT/CN2012/084135 WO2013071830A1 (en) | 2011-11-16 | 2012-11-06 | Roller way type solar cell silicon wafer sintering furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103640947A CN102393139A (en) | 2011-11-16 | 2011-11-16 | Roller way type solar battery silicon wafer sintering furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102393139A true CN102393139A (en) | 2012-03-28 |
Family
ID=45860499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103640947A Pending CN102393139A (en) | 2011-11-16 | 2011-11-16 | Roller way type solar battery silicon wafer sintering furnace |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102393139A (en) |
| WO (1) | WO2013071830A1 (en) |
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| CN102709181A (en) * | 2012-05-08 | 2012-10-03 | 常州天合光能有限公司 | Method for improving conversion efficiencies of silicon crystal battery chips |
| CN102809270A (en) * | 2012-06-28 | 2012-12-05 | 杭州大和热磁电子有限公司 | Silicon wafer drying furnace capable of preventing metal ion pollution and silicon wafer drying method |
| CN102881768A (en) * | 2012-09-19 | 2013-01-16 | 江苏荣马新能源有限公司 | Crystal silicon solar battery electrode vulcanization processing method |
| CN103115487A (en) * | 2013-01-23 | 2013-05-22 | 尹克胜 | Tunnel kiln producing silicon nitride and silicon carbide combined product with nitrogen discharged by entrained-flow bed reactor |
| WO2013071830A1 (en) * | 2011-11-16 | 2013-05-23 | Yang Guiling | Roller way type solar cell silicon wafer sintering furnace |
| CN103438702A (en) * | 2013-08-28 | 2013-12-11 | 南通众兴磁业有限公司 | Sintering furnace for ferrite |
| CN103499209A (en) * | 2013-09-06 | 2014-01-08 | 北京吉阳技术股份有限公司 | Chained sintering furnace hearth structure and method applied to crystalline silicon photovoltaic cell production |
| CN103743231A (en) * | 2013-11-25 | 2014-04-23 | 安徽赛耐尔机械制造有限公司 | Roller-bed-type drying and sintering integrated furnace for solar battery silicon wafers |
| CN104810309A (en) * | 2015-04-25 | 2015-07-29 | 北京金晟阳光科技有限公司 | Roller way type solar cell sintering and radiation annealing integrated continuous furnace |
| CN105021033A (en) * | 2014-04-28 | 2015-11-04 | 三星电机株式会社 | Firing furnace |
| CN106052390A (en) * | 2016-05-20 | 2016-10-26 | 浙江光隆能源科技股份有限公司 | Sintering equipment for polycrystalline solar cell |
| CN104810309B (en) * | 2015-04-25 | 2018-02-09 | 北京金晟阳光科技有限公司 | Roller bed type solar cell sinters and radiation annealing one continuous oven |
| US10591216B2 (en) | 2017-10-02 | 2020-03-17 | Industrial Technology Research Institute | Solidifying device |
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| WO2013071830A1 (en) * | 2011-11-16 | 2013-05-23 | Yang Guiling | Roller way type solar cell silicon wafer sintering furnace |
| CN102709181B (en) * | 2012-05-08 | 2014-12-31 | 常州天合光能有限公司 | Method for improving conversion efficiencies of silicon crystal battery chips |
| CN102709181A (en) * | 2012-05-08 | 2012-10-03 | 常州天合光能有限公司 | Method for improving conversion efficiencies of silicon crystal battery chips |
| CN102809270B (en) * | 2012-06-28 | 2014-11-05 | 杭州大和热磁电子有限公司 | Silicon wafer drying furnace capable of preventing metal ion pollution and silicon wafer drying method |
| CN102809270A (en) * | 2012-06-28 | 2012-12-05 | 杭州大和热磁电子有限公司 | Silicon wafer drying furnace capable of preventing metal ion pollution and silicon wafer drying method |
| CN102881768A (en) * | 2012-09-19 | 2013-01-16 | 江苏荣马新能源有限公司 | Crystal silicon solar battery electrode vulcanization processing method |
| CN103115487A (en) * | 2013-01-23 | 2013-05-22 | 尹克胜 | Tunnel kiln producing silicon nitride and silicon carbide combined product with nitrogen discharged by entrained-flow bed reactor |
| CN103115487B (en) * | 2013-01-23 | 2014-12-24 | 青海拓海新材料有限公司 | Tunnel kiln producing silicon nitride and silicon carbide combined product with nitrogen discharged by entrained-flow bed reactor |
| CN103438702A (en) * | 2013-08-28 | 2013-12-11 | 南通众兴磁业有限公司 | Sintering furnace for ferrite |
| CN103499209A (en) * | 2013-09-06 | 2014-01-08 | 北京吉阳技术股份有限公司 | Chained sintering furnace hearth structure and method applied to crystalline silicon photovoltaic cell production |
| CN103743231A (en) * | 2013-11-25 | 2014-04-23 | 安徽赛耐尔机械制造有限公司 | Roller-bed-type drying and sintering integrated furnace for solar battery silicon wafers |
| CN105021033A (en) * | 2014-04-28 | 2015-11-04 | 三星电机株式会社 | Firing furnace |
| CN104810309A (en) * | 2015-04-25 | 2015-07-29 | 北京金晟阳光科技有限公司 | Roller way type solar cell sintering and radiation annealing integrated continuous furnace |
| CN104810309B (en) * | 2015-04-25 | 2018-02-09 | 北京金晟阳光科技有限公司 | Roller bed type solar cell sinters and radiation annealing one continuous oven |
| CN106052390A (en) * | 2016-05-20 | 2016-10-26 | 浙江光隆能源科技股份有限公司 | Sintering equipment for polycrystalline solar cell |
| CN106052390B (en) * | 2016-05-20 | 2018-03-16 | 浙江光隆能源科技股份有限公司 | A kind of agglomerating plant for polycrystalline solar cell |
| US10591216B2 (en) | 2017-10-02 | 2020-03-17 | Industrial Technology Research Institute | Solidifying device |
| CN111006504A (en) * | 2019-12-12 | 2020-04-14 | 佛山市创瓷窑炉有限公司 | Foamed ceramic roller kiln |
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