CN102376520B - Ion implantation dose detection control apparatus of plasma immersion ion implanter - Google Patents
Ion implantation dose detection control apparatus of plasma immersion ion implanter Download PDFInfo
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- CN102376520B CN102376520B CN 201010255068 CN201010255068A CN102376520B CN 102376520 B CN102376520 B CN 102376520B CN 201010255068 CN201010255068 CN 201010255068 CN 201010255068 A CN201010255068 A CN 201010255068A CN 102376520 B CN102376520 B CN 102376520B
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- 239000002245 particle Substances 0.000 claims abstract description 24
- 238000003745 diagnosis Methods 0.000 claims abstract description 20
- 238000002513 implantation Methods 0.000 claims abstract description 17
- 238000002347 injection Methods 0.000 claims description 85
- 239000007924 injection Substances 0.000 claims description 85
- 239000000523 sample Substances 0.000 claims description 5
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Abstract
The invention, which belongs to the microelectronic technology field, discloses an ion implantation dose detection control apparatus of a plasma immersion ion implanter. The apparatus comprises: a diagnosis unit, which is used for diagnosing plasma characteristic parameters including an ionic density, an electronic density, a plasma electronic potential and a plasma electronic temperature and the like; an analysis unit, which is used for obtaining particle components in a plasma and particle contents of all the components; a calculating unit, which is used for calculating an implantation technological parameter according to the plasma characteristic parameters as well as the particle components in the plasma and the particle contents of all the components; and a control unit, which is used for controlling an implantation technology of a plasma immersion ion implanter according to an output signal of the calculating unit and the implantation technological parameter. According to the ion implantation dose detection control apparatus of the plasma immersion ion implanter in the invention, a problem on detection of a plurality of charged ions during current ion implantation dose detection is solved; and meanwhile, the apparatus can be applied for accurate control of a process flow of ion implantation.
Description
Technical field
The present invention relates to the ion implantation dosage detection control apparatus, particularly relates to a kind of injection ion dose detection control apparatus of plasma immersion implanter.
Background technology
In semiconductor technology, the impurity doping techniques of main flow all adopts beamline ion implanters injection technique (Ion Implantation, II), this method is to produce plasma by ion source, by mass spectral analysis, required ion component is extracted again to, ion is accelerated to certain energy and is injected into (as silicon chip) in semiconductor chip.This method needs complicated mass spectral analysis and scanning means, and injection efficiency is low, complex structure, and cost is high.
Along with further dwindling of integrated circuit characteristic size, ion implantation energy need to further be reduced to a kilo electron volt following (inferior KeV), yet ion beam energy there will be the series of negative effects such as line dispersion, uniformity variation, the further reduction of efficiency after reducing.Thereby in recent years proposed novel plasma immersion injection technique (Plasma Immersion Ion Implantation, PIII) and avoided above problem.Plasma immersion injects semiconductor chip is placed on the electrode of negative electrode, and adds back bias voltage on this electrode.To introducing the gas needed in injected system work chamber, and system is added to power source, make to be introduced into the gas build-up of luminance of chamber by charging methods such as inductive coupled, capacitive couplings, form plasma.Owing to being added with back bias voltage on negative electrode, just having like this back bias voltage sheath layer and exist near substrate.Under the high voltage of this sheath layer accelerates, the cation in the sheath layer can and be injected in substrate through the sheath layer.The method has following advantage:
1. without extracting ion from ion source, ion being carried out to mass spectral analysis and linear the acceleration, make the structure of injection device greatly simplify, save great amount of cost;
2. this technology adopts sheath layer acceleration mechanism, and injection process is that full wafer injects, irrelevant with sizes of substrate, so this technology productive rate is high.
Therefore, the plasma immersion injection is a kind of injection technique of future generation that beamline ion implanters is injected that is hopeful very much to replace.But PIII also faces many technical challenges, injecting the ion dose Detection & Controling is one of them.
Method for dose measurement in PIII mainly contains bias current method and faraday cup detection method.Ion dose is injected in the current measurement that the bias current method flows through substrate by measurement.When plasma injects, flow through substrate currents
I＝I
ion+I
e+I
se+I
dis+I
si， (1)
I wherein
ionfor injecting ionic current, I
efor the electric current of electron stream in plasma to substrate, I
sefor the electric current that substrate surface emission secondary electron forms, I
disfor displacement current, I
sielectric current for the formation of substrate emission secondary ion.If inject the surface density of the ion dose of substrate
Wherein n is for injecting the unit charge amount of ion band, and T is injection length.Form in five parts of substrate currents I
dis, I
si, I
eignore (displacement current be can not ignore sometimes, and it is more difficult that the bias current method is measured the injection ion dose like this) with respect to other parts than I, but the secondary electron electric current I
sebut than I
ionwant large one even more to twice, and I
sewith substrate material, bias voltage size etc. factor analysis and can't accurately determining.Form I simultaneously
ionion not merely only with a kind of quantity of electric charge, to also have the ion of ionized many times be that n in formula (2) is not unique, so the ion dose n that the bias current method records
ibe not that PIII is injected into the true ion dose in substrate, thus cannot be according to n
icontrol the PIII technological process.
The detection principle of faraday cup is identical with bias current method essence is all to measure the injection ion dose by measuring ionic current, difference is that the bias current method is usually using whole objective table as current measurement probe, and the faraday cup has an independently chamber, it is afterwards just measured that the injection ion enters this chamber.Because the Faraday cup mensuration has one independently to measure displacement current, the secondary current that chamber just can be eliminated to exist in the bias current method by the whole bag of tricks and structural design.But faraday cup detection method still can't solve multiple charged ion problem, so, although the method increases than bias current method, it is directly used in PIII and injects the ion dose detection and control still infeasible.
Summary of the invention
Detect the problems referred to above that exist for prior art intermediate ion implantation dosage, the invention provides a kind of injection ion dose detection control apparatus of plasma immersion implanter.Described technical scheme is as follows:
The injection ion dose detection control apparatus of plasma immersion implanter of the present invention comprises:
Diagnosis unit, for diagnosing plasma characteristic parameters;
Analytic unit, for obtaining plasma particle component and each component particle content;
The computing unit be connected with analytic unit with described diagnosis unit, for according to described plasma characteristic parameters and described plasma particle component and described each component particle content, calculate the injection technology parameter;
The control unit be connected with described computing unit, for the injection technology of the output signal according to described computing unit and injection technology parameter control plasma immersion implanter.
The injection ion dose detection control apparatus of plasma immersion implanter of the present invention, the plasma characteristic parameters of described diagnosis unit diagnosis comprises plasma ion density, electron density, plasma potential and plasma electron temperature.
The injection ion dose detection control apparatus of plasma immersion implanter of the present invention, described injection technology parameter is for determining injection technology time and the interior injection ion dose of definite injection technology time under the target implantation dosage.
The injection ion dose detection control apparatus of plasma immersion implanter of the present invention, described computing unit comprises injection length computing module and implantation dosage computing module, and described injection length computing module injects the required time of plasma of determining dosage according to utilizing quasi static C hild-Langmuir sheath theory to calculate; Described implantation dosage computing module is the plasma dosage injected in the time according to utilizing quasi static C hild-Langmuir sheath theory to calculate determining.
The injection ion dose detection control apparatus of plasma immersion implanter of the present invention, described control unit, according to the injection technology of the implantation dosage work signal controlling plasma immersion implanter of the output of described computing unit, is specially air supply unit, power cell, bias unit and the vacuum unit of controlling the plasma immersion implanter.
The injection ion dose detection control apparatus of plasma immersion implanter of the present invention, the injection technology that described control unit is controlled the plasma immersion implanter according to injection length signal and the injection technology parameter of the output of described computing unit, be specially beginning and the end of the injection technology process of controlling the plasma immersion implanter.
The injection ion dose detection control apparatus of plasma immersion implanter of the present invention, described diagnosis unit one or more formations in Langmuir (Langmuir) electrostatic probe, ripple diagnostic equipment, microwave interferometer.
The injection ion dose detection control apparatus of plasma immersion implanter of the present invention, described analytic unit adopts mass spectrometer to form.
The beneficial effect of technical scheme provided by the invention is: the injection ion dose detection control apparatus of plasma immersion implanter of the present invention can overcome existing ion implantation dosage and detect the problem that exists multiple charged ion to detect; Injection ion dose detection control apparatus of the present invention can be for accurately controlling the technological process of Implantation simultaneously.
The accompanying drawing explanation
Fig. 1 is the plasma immersion injected system schematic diagram of the injection ion dose detection control apparatus of application plasma immersion implanter of the present invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing, embodiment of the present invention is described further in detail.
The injection ion dose detection control apparatus of plasma immersion implanter of the present invention mainly comprises 4 parts, is respectively diagnosis unit, analytic unit, computing unit and control unit.
Diagnosis unit can adopt one or more formations in Miao Er (Langmuir) electrostatic probe, ripple diagnostic equipment, microwave interferometer, in practical application, according to the difference of data acquisition, need to carry out to determine the instrument of selecting.Diagnosis unit, for diagnosing plasma characteristic parameters, comprises the parameters such as plasma ion density, electron density, plasma potential and plasma electron temperature.
Analytic unit adopts mass spectrometer to form usually, for detection of obtaining particle component and each component particle content in plasma.
Computing unit is connected respectively with diagnosis unit with analytic unit.Computing unit is adopted available single-chip microcomputer, DSP, ARM or universal cpu and is formed, for the plasma characteristic parameters according to by diagnosis unit output and the plasma particle component of being exported by analytic unit and each component particle content, in conjunction with quasistatic Child-Langmuir equation-Langmuir sheath layer injection model theory, calculate the injection technology parameter.Computing unit comprises injection length computing module and implantation dosage computing module.The injection length computing module is used for diagnosing plasma characteristic parameters according to diagnosis unit, comprise the parameters such as plasma ion density, electron density, plasma potential and plasma electron temperature, and particle component and each component particle content in plasma, utilize quasi static C hild-Langmuir sheath theory to calculate and inject the required time of plasma of determining dosage; And the implantation dosage computing module is used for diagnosing plasma characteristic parameters according to diagnosis unit, comprise the parameters such as plasma ion density, electron density, plasma potential and plasma electron temperature, and particle component and each component particle content in plasma, utilizing quasi static C hild-Langmuir sheath theory to calculate determining is the plasma dosage injected in the time.
Injection ion dose in the injection technology time of the injection technology time under the target implantation dosage that the injection technology parameter is outside input or outside input.
What with described computing unit, be connected is control unit, injection technology for the output signal according to computing unit and injection technology parameter control plasma immersion implanter, comprise a unit or several cell operation parameter in air supply unit, power cell, bias unit and the vacuum unit of adjusting the plasma immersion implanter, make it reach desirable state of the art.Control unit can adopt single-chip microcomputer, DSP, ARM or universal cpu to form.In addition, the end that starts from that control unit can also be controlled plasma immersion implanter injection technology process according to output signal and the injection technology parameter of computing unit.
According to quasi static C hild-Langmuir sheath theory for a kind of ion is had
The thickness of plate shape sheath layer
s
0＝(2ε
0V
0/en
0)
1/2， (3)
ε wherein
0for hollow dielectric constant, V
0for the pulsed bias value
Ion in plate shape sheath layer all injects the required time
T
0≈2.7×2π/ω
pi， (4)
ω wherein
pi=(e
2n
pi/ ε
0m
pi)
1/2for plasma oscillation frequency
After adding pulsed bias, the expansion of plate shape sheath layer, become stable Child sheath layer through the long enough time-evolution.The thickness of sheath layer now
T wherein
efor the plasma electrons temperature, unit is volt, reaches the time of stable state Child sheath layer
ω wherein
pifor plasma oscillation frequency, it is expressed as previously mentioned.At time t≤T
cthe time, the sheath layer does not reach stable state, now residing position, sheath layer border
Meeting pulse width T
p≤ T
cunder condition, Sing plus injects the ion dose of substrate
Dosage herein is surface density.
Injection length
T
im＝N/(f×dose
pulse)， (9)
Wherein N is the doping content that substrate reaches, and f is the pulsed bias frequency.
Implantation dosage
N＝T
im×f×dose
pulse， (10)
T
imfor injection length.
Work as T
p>=T
cthe time Sing plus inject the ion dose of substrate
dose
pulse＝n
0[s
c+u
B(T
p-T
c)]
Injection length
T
im＝N/(dose
pulse×f)， (11)
Inject metering
N＝T
im×f×dose
pulse， (12)
Above-mentioned all equations are only set up single kind of ion, and have different kinds of ions in plasma, and their carried charge and quality may be all different.Quote equivalent mass M and equivalent charge Q herein.
In multiple mass ion the plasma system deposited, all ions equivalences are become to a quality, equivalent mass M meets
In formula
n
ibe the density of i intermediate ion, Q
iit is the carried charge of i intermediate ion.
The equivalence electric charge
In formula
n is total ion concentration, can have plasma diagnosis device to obtain, d
ican be obtained or similarly install by analyzing plasma composition obtaining by mass spectrometer.Value c in this pattern (13)
ican be expressed as
All use formula (13), (14) to replace in all places of using quality and the quantity of electric charge in formula (1) to (12).Like this at T
p≤ T
cthe time, while needing to inject metering N in knowing substrate, can obtain injection length T according to formula (9)
im, and can know the injection ion dose in certain injection length according to formula (10).Thereby work as T
p≤ T
cin time, can be detected PIII injection ion dose and control PIII according to formula (9), (10).Work as T
p>=T
c, according to formula (11), (12), can measure equally in PIII and inject the ion dose detection and control PIII.
Above-mentioned formula (3) to formula (15) can be called multiparticle plasma quasistatic Sheath model.
The plasma diagnostics unit of the injection ion dose detection control apparatus of plasma immersion implanter of the present invention is for obtaining above-mentioned method for detecting dose various plasma parameters used with the analytic unit of analyzing plasma particle, specifically comprises parameter and the plasma ion kind obtained according to the analytic unit of analyzing the plasma ion composition and the particle proportions etc. such as plasma electron density, plasma ion density, plasma potential, plasma electron temperature.The injection ion dose detection control apparatus computing unit of plasma immersion implanter of the present invention is processed the data of diagnosis unit and analytic unit output, obtains the implantation dosage information in the plasma injection process.The control unit of the injection ion dose detection control apparatus of plasma immersion implanter is according to the operation of each parts of the output signal control system of computing unit: as power source, bias generator, air inlet etc., so that the plasma injection technology reaches best stable state.
Below in conjunction with accompanying drawing, be specifically described:
The schematic diagram that Fig. 1 is the plasma immersion injected system.Plasma source is inductive coupled plasma source in the present embodiment, and according to different demands, plasma source herein can also be other type.Whole plasma immersion injected system 1 has a plasma immersion to inject work chamber 13, and the pedestal 32 that is positioned at chamber is used to semiconductor chip (as silicon chip) to provide support.Back bias voltage power supply 30 is added on bottom electrode 50, and electrically, bottom electrode 50 is connected with pedestal 32, thereby can provide bias voltage to substrate.Bottom electrode 50 can move up and down to adjust the height of pedestal and substrate in order to make technique reach optimum state.
In the present embodiment, the producing method of plasma 20 is inductive coupled (ICP) mode, and plasma 20 can be also that the capacitive coupling mode produces, and can also be that the hollow cathode mode produces or even the combination in any mode between them produces.During system works, by matching network 14, add radio-frequency power to coil 11, radio-frequency power is provided by radio frequency power source 12, by inductive coupled mode, power is coupled to by air supply unit 15, passing into the working gas in chamber 13, working gas just can build-up of luminance and form plasma 20 in chamber.Plasma forms the sheath layer near base sheet rack 32, and the back bias voltage that the cation in the sheath layer provides at negative bias potential source 30 is injected substrate through the sheath layer under accelerating.Last tail gas is taken away by vacuum unit 70.
Plasma diagnostic unit 40 for detection of plasma characteristic parameters in the present embodiment can be electrostatic probe, it can be microwave interferometer, also can other plasma diagnostic means or unit, its purpose is to obtain plasma characteristic parameters, analyzes the analytic unit 60 of plasma particle composition for obtaining particle composition and the ratio of plasma.The data information transfer that detecting unit 40 and analytic unit 60 obtain is to the computing unit 80 of system, and computing unit 80 can consist of single-chip microcomputer, digital signal processor (DSP), ARM or general central processing unit (CPU).Computing unit 80 also can be accepted the signal from other unit simultaneously.Information output after the information of the input of computing unit processing subsequently also will be processed is to control unit 90, simultaneously by real-time technological parameter output display, control unit can consist of single-chip microcomputer, DSP, ARM or universal cpu, the signal that control unit 90 is sent here according to computing unit 80, control corresponding part as air supply unit 15, power source 12, the unit such as bias generator 30, vacuum unit 70 reach optimum state with the adjusting process condition.Control unit 90 and computing unit 80 also can be combined into ，Gai unit, a unit and consist of single-chip microcomputer, DSP, ARM or universal cpu, complete the function of above-mentioned computing unit 80 and control unit 90.
Computing unit in the implementation case can be based on formula T
im=N/ (f * dose
pulse) obtain injection length under target metering or according to formula N=T
im* f * dose
pulseobtain being injected into the ion dose in substrate.The predetermined injection length that control unit transmits according to computing unit is controlled beginning and the end of technological process.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (5)
1. the injection ion dose detection control apparatus of a plasma immersion implanter, is characterized in that, described device comprises:
Diagnosis unit, for diagnosing plasma characteristic parameters;
Analytic unit, for obtaining plasma particle component and each component particle content;
The computing unit be connected with analytic unit with described diagnosis unit, for according to described plasma characteristic parameters and described plasma particle component and described each component particle content, calculate the injection technology parameter;
The control unit be connected with described computing unit, for the injection technology of the output signal according to described computing unit and injection technology parameter control plasma immersion implanter;
The plasma characteristic parameters of described diagnosis unit diagnosis comprises plasma ion density, electron density, plasma potential and plasma electron temperature;
Described injection technology parameter is for determining injection technology time and the interior injection ion dose of definite injection technology time under the target implantation dosage;
Described computing unit comprises injection length computing module and implantation dosage computing module, and described injection length computing module injects the required time of plasma of determining dosage according to utilizing quasistatic Child-Langmuir equation-Langmuir sheath theory to calculate; Described implantation dosage computing module is the plasma dosage injected in the time according to utilizing quasistatic Child-Langmuir equation-Langmuir sheath theory to calculate determining.
2. the injection ion dose detection control apparatus of plasma immersion implanter according to claim 1, it is characterized in that the injection technology that described control unit is controlled the plasma immersion implanter according to implantation dosage control signal and the injection technology parameter of the output of described computing unit.
3. the injection ion dose detection control apparatus of plasma immersion implanter according to claim 1, it is characterized in that the injection technology that described control unit is controlled the plasma immersion implanter according to injection length signal and the injection technology parameter of described computing unit output.
4. the injection ion dose detection control apparatus of plasma immersion implanter according to claim 1, is characterized in that, one or more in Child-Langmuir equation-Langmuir electrostatic probe, ripple diagnostic equipment, microwave interferometer of described diagnosis unit form.
5. the injection ion dose detection control apparatus of plasma immersion implanter according to claim 1, is characterized in that, described analytic unit adopts mass spectrometer to form.
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| US5296272A (en) * | 1990-10-10 | 1994-03-22 | Hughes Aircraft Company | Method of implanting ions from a plasma into an object |
| JP2001267266A (en) * | 1999-12-22 | 2001-09-28 | Axcelis Technologies Inc | Method for implanting plasma immersion ion |
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| US5296272A (en) * | 1990-10-10 | 1994-03-22 | Hughes Aircraft Company | Method of implanting ions from a plasma into an object |
| JP2001267266A (en) * | 1999-12-22 | 2001-09-28 | Axcelis Technologies Inc | Method for implanting plasma immersion ion |
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| Title |
|---|
| 等离子体浸没离子注入技术与设备研究;刘杰; 汪明刚; 杨威风; 李超波; 夏洋;《半导体技术》;20100731;第35卷(第7期);第628页左栏第2段至第629页左栏末段 * |
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